Relevant bibliographies by topics / MESFET

Academic literature on the topic 'MESFET'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'MESFET.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "MESFET"

1

Katakami, S., Makoto Ogata, Shuichi Ono, and Manabu Arai. "Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate." Materials Science Forum 556-557 (September 2007): 803–6. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.803.

Full text
Abstract:
The electrical characteristics of a SiC-MESFET are affected by the channel structure characteristics, such as impurity density and thickness. MESFETs fabricated with ion implantation technique, can form thinner and higher doped channel layers than those fabricated with conventional epitaxial growth, thus improve RF characteristics of MESFETs. We calculated the doping profile of the channel layer for an ion implanted SiC-MESFET using a simulator and then fabricated a SiC-MESFET with the same doping profile as obtained from the simulation. The ion implanted SiC-MESFET operated successfully and had the same electrical characteristics as the epitaxial SiC-MESFET. We demonstrated the effectiveness of one-step implantation channel layer for the ion implanted SiC-MESFET.
APA, Harvard, Vancouver, ISO, and other styles
2

Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." Materials Science Forum 556-557 (September 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.

Full text
Abstract:
A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current, the cut-off frequency, and the maximum oscillation frequency for higher delta-doping concentration near the gate. In all cases, DC and RF performances for double delta-doped channel MESFETs are much improved than those of the conventional MESFET.
APA, Harvard, Vancouver, ISO, and other styles
3

Zheng, Chun-Yi, Wen-Jung Chiang, Yeong-Lin Lai, Edward Y. Chang, Shen-Li Chen, and K. B. Wang. "Characteristics of GaAs Power MESFETs with Double Silicon Ion Implantations for Wireless Communication Applications." Open Materials Science Journal 10, no. 1 (June 15, 2016): 29–36. http://dx.doi.org/10.2174/1874088x01610010029.

Full text
Abstract:
GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-µm MESFET had a saturation drain current of 238 mA/mm after Si3N4passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited aPoutof 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximumPoutof 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited aP1dBof 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with aPoutof 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.
APA, Harvard, Vancouver, ISO, and other styles
4

Banu, Viorel, Josep Montserrat, Mihaela Alexandru, Xavier Jordá, José Millan, and Philippe Godignon. "Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits." Materials Science Forum 778-780 (February 2014): 891–94. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.891.

Full text
Abstract:
This work provides experimental result on fabricated 4H-SiC lateral power MESFET intended to be used in further development of high temperature integrated circuits for power application. The power SiC MESFET device was developed using a planar technology on silicon carbide and P implant isolation technique. Its destination to monolithic integration demands a lateral layout connection topology. The use of quite high doped N type epitaxial layer (1017cm-3) typical for the integrated circuits raises difficulties to keep the leakage current of the Schottky gate in a decent range. Therefore, a hexagonal close loop gate in conjunction with three metal interconnection levels was adopted, thus obtaining a compact lateral MESFET device and avoiding any drain to source parasitic leakage path. Using the tungsten gate MESFETS, the first generation of monolithic integrated lateral power MESFET device was integrated on the same wafer with digital circuits and a voltage reference analog circuit able to operate up to 250C. The temperature range can be next improved by using higher barrier for the gate contact.
APA, Harvard, Vancouver, ISO, and other styles
5

OTSUJI, TAIICHI, KOICHI MURATA, KOICHI NARAHARA, KIMIKAZU SANO, EIICHI SANO, and KIMIYOSHI YAMASAKI. "20-40-Gbit/s-CLASS GaAs MESFET DIGITAL ICs FOR FUTURE OPTICAL FIBER COMMUNICATIONS SYSTEMS." International Journal of High Speed Electronics and Systems 09, no. 02 (June 1998): 399–435. http://dx.doi.org/10.1142/s0129156498000191.

Full text
Abstract:
This paper describes recent advances in high-speed digital IC design technologies based on GaAs MESFETs for future high-speed optical communications systems. We devised new types of a data selector and flip-flops, which are key elements in performing high-speed digital functions (signal multiplexing, decision, demultiplexing, and frequency conversion) in front-end transmitter/receiver systems. Incorporating these circuit design technologies with state-of-the-art 0.12 μm gate-length GaAs MESFET process, we developed a DC-to-44-Gbit/s 2:1 data multiplexer IC, a DC-to 22-Gbit/s static decision IC, and a 20-to-40-Gbit/s dynamic decision IC. The fabricated ICs demonstrated record speed performances for GaAs MESFETs. Although further operating speed margin is still required, the GaAs MESFET is a potential candidate for 20- to 40-Gbit/s class applications.
APA, Harvard, Vancouver, ISO, and other styles
6

Wojtasiak, Wojciech, and Daniel Gryglewski. "A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR." International Journal of Electronics and Telecommunications 57, no. 1 (March 1, 2011): 135–40. http://dx.doi.org/10.2478/v10177-011-0020-0.

Full text
Abstract:
A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR In the paper, a 100W SiC MESFET amplifier design dedicated for a L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree's 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor S-parameters at three operating points for On-state, Off-state and normally biased. The measurements and simulations prove usefulness of the proposed design method. The amplifier was excited with pulsed and cw signals for the case temperature ranging from 60°C to 140°C. As a result of the case temperature changes the output power drop was lower than 0.5 dB at the level of 150 W.
APA, Harvard, Vancouver, ISO, and other styles
7

SHUR, M. S., T. A. FJELDLY, T. YTTERDAL, and K. LEE. "UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS." International Journal of High Speed Electronics and Systems 03, no. 02 (June 1992): 201–33. http://dx.doi.org/10.1142/s0129156492000084.

Full text
Abstract:
We describe a new, unified model for MEtal Semiconductor Field Effect Transistors (MESFETs) which covers all ranges of operation, including the subthreshold regime. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics are described by continuous, analytical expressions with relatively few, physically based parameters. The model includes effects such as velocity saturation, parasitic series resistances, the dependence of the threshold voltage on drain bias, finite output conductance in saturation, and temperature dependence of the device parameters. We also describe a parameter extraction routine which allows the model parameters to be derived in a straightforward fashion from experimental data. The model has been incorporated into our new circuit simulator AIM-Spice. The new device characterization is applied with good results to a typical ion-implanted GaAs MESFET and a delta-doped MESFET.
APA, Harvard, Vancouver, ISO, and other styles
8

Tournier, Dominique, Miquel Vellvehi, Phillippe Godignon, Xavier Jordá, and José Millan. "Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications." Materials Science Forum 527-529 (October 2006): 1243–46. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1243.

Full text
Abstract:
The potential of SiC MESFETs has been demonstrated for high frequency applications on several circuits in the 1-5 GHz frequency range. Although MESFET structures are conventionally used for RF applications, in this paper we report a low voltage (180V) power switch and its current limiting application based on a double gate MESFET structure, showing enhanced forward and blocking capabilities. The reported devices utilize a thin highly doped p-type layer implanted at high energy as buffer layer. Various layouts have been fabricated, varying the gate length; with either a single gate (p-buried layer connected to source) or double gate (one Schottky, and the second on the P-buried layer). Gate RESURF field-plate variation has been also included at the gate electrode. The I(V) electrical characterization validates the double gate configuration benefits. This double gate structure shows a higher gate transconductance than the single gate one. High voltage measurements in conducting mode (180V, 160mA/mm, 30W/mm) confirm the operation of the MESFET as a current limiting device, with excellent gate control capabilities at temperature up to 190°C.
APA, Harvard, Vancouver, ISO, and other styles
9

Franklin, A. J., E. A. Amerasekera, and D. S. Campbell. "A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour." Active and Passive Electronic Components 12, no. 3 (1987): 201–11. http://dx.doi.org/10.1155/1987/96107.

Full text
Abstract:
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.The work to date has shown that GaAs MESFET structures can be severely degraded with ESD pulses above 600V as compared with 200V for Si NMOS. It has also been shown that both GaAs and NMOS structures are polarity sensitive.The behaviour of the Schottky barrier is used to explain the polarity behaviour in GaAs MESFETs. The breakdown of the oxide in the NMOS devices can be explained by impact ionisation.
APA, Harvard, Vancouver, ISO, and other styles
10

Estakhrian Haghighi, Amir Reza, and Mojtaba Mohamadi. "The Silicon Plates in Buried Oxide for Enhancement of the Breakdown Voltage in SOI MESFET." Applied Mechanics and Materials 538 (April 2014): 58–61. http://dx.doi.org/10.4028/www.scientific.net/amm.538.58.

Full text
Abstract:
This paper introduces a novel SOI MESFET which enhancement breakdown voltage (VBR) by modifying electric field distribution. To achieve high enhancement of the VBR utilized three Silicon plates in buried oxide of the silicon on insulator metal semiconductor field effect transistor (SOI MESFET). This change in the SOI MESFET structure leads to controlled electric field distribution , increase VBR and Output Resistance (RO). The numerical simulation results show that the VBR of the Silicon Plates SOI MESFET (SP-SOI MESFET) structure improves by 50% compared with that of the conventional SOI MESFET (C-SOI MESFET) structure. As a result, the SP-SOI MESFET structure has superior electrical performances in comparison with the conventional structure.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "MESFET"

1

Turner, Gary Chandler. "Zinc Oxide MESFET Transistors." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

Full text
Abstract:
Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semiconductor devices require the material to be selectively doped with specific impurities that can make the material into one of two electronically distinct types – p- or n-type. Unfortunately, making reliable p-type ZnO has been elusive to date, despite considerable efforts worldwide. This lack of p-type material has hindered development of transistors based on this material. One alternative is a Schottky junction, which can be used as the active element in a type of transistor known as a metal-semiconductor field effect transistor, MESFET. Schottky junctions are traditionally made from noble metal layers deposited onto semiconductors. Recent work at the Canterbury University has shown that partially oxidised metals may in fact be a better choice, at least to zinc oxide. This thesis describes the development of a fabrication process for metal-semiconductor field effect transistors using a silver oxide gate on epitaxially grown zinc oxide single crystals. Devices were successfully produced and electrically characterised. The measurements show that the technology has significant potential.
APA, Harvard, Vancouver, ISO, and other styles
2

Ho, Wai. "GaAs MESFET modeling and its applications." Ohio : Ohio University, 1993. http://www.ohiolink.edu/etd/view.cgi?ohiou1175707072.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Tang, Wing Ho Aaron. "Optimum MESFET frequency multiplier design." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239221.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Eddini, Abdel-ilah. "Étude et extraction des paramètres de bruit dans un transistor Mesfet." Sherbrooke : Université de Sherbrooke, 2001.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Langlois, Pierre L. "Développement d'un procédé de fabrication de transistors en technologie MESFET." Sherbrooke : Université de Sherbrooke, 2004.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Abbott, Derek. "GaAs MESFET Photodetectors for imaging arrays /." Title page, contents and abstract only, 1995. http://web4.library.adelaide.edu.au/theses/09PH/09pha1312.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Khalaf, Yaser A. "Systematic Optimization Technique for MESFET Modeling." Diss., Virginia Tech, 2000. http://hdl.handle.net/10919/28515.

Full text
Abstract:
Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development. The sophistication of modern communication systems urged the need of monolithic microwave integrated circuits (MMICs), which consists of many MESFETs on the same chip. As the chip density increases, the need of accurate MESFET models becomes more pronounced. In this study, a new technique has been developed to extract a 15-element small signal model of MESFET devices. This technique implies the use of three sets of S-parameter measurements at different bias conditions. The technique consists of two major steps; in the first step, some of the bias-independent extrinsic parameters are estimated in preparation for the second step. In the second step, all other parameters should be extracted at the bias point of interest. This technique shows reliable results. Unlike other optimization techniques, our proposed technique shows insensitivity to the unavoidable measurement errors over any frequency range. It shows a unique solution for all parameter values. This technique has been tested on S-parameters of a hypothetical device model and compared with other optimization-based extraction techniques. Moreover, it has been also applied to GaAsTEK 0.8x300 μm2 MESFETs to extract the model parameters at different bias voltages. The study reveals accurate and consistent results among the similar devices on the same wafer. Some thermal characteristics of the small-signal parameters are discussed. The parameters are extracted from measurements at three temperatures for two similar devices on the same wafer. The thermal results of the two devices demonstrate consistent results, which assure the preciseness, and robustness of our proposed technique. In addition, the relation between the small-signal model parameters and the large signal model parameters is also presented. The parameters of an empirical model for the drain-source current are extracted from the dc measurements along with the small-signal transconductance and output conductance. The large-signal model results for a GaAsTEK 0.8x300 μm2 MESFET are introduced.
Ph. D.
APA, Harvard, Vancouver, ISO, and other styles
8

Altay, Mirkan. "Comparison And Evaluation Of Various Mesfet Models." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12605987/index.pdf.

Full text
Abstract:
There exist various models for Microwave MESFET equivalent circuit representations. These models use different mathematical models to describe the same MESFET and give similar results. However, there are some differences in the results when compared to the experimental measurements. In this thesis, various theoretical models are applied to the same MESFET and comparison made with measured data. It is shown that some models worked better on some parameters of the MESFET, while the others were more effective on other parameters. Altogether eight models were examined and data optimized to fit these theoretical models. In using optimization algorithms MATLAB FMINSEARCH and GENETIC ALGORITHM CODE were used alternatively to solve the initial value problem.
APA, Harvard, Vancouver, ISO, and other styles
9

Weissfloch, Phillip. "Iron-GaAs schottky contact for mesfet applications." Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=61798.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Elgaid, Khaled Ibrahim. "A Ka-Band GaAs MESFET monolithic downconverter." Thesis, University of Glasgow, 1998. http://theses.gla.ac.uk/1730/.

Full text
Abstract:
The objective of the work of this thesis is to design, fabricate, and characterise a GaAs MESFET based monolithic microwave integrated circuit (MMIC) downconverter which operates at Ka-band frequency (35GHz). In the course of the project active and passive elements required for the MMIC were designed, fabricated, characterised and their equivalent circuit models extracted. Fabrication processes for passives, actives and MMIC were realised using mainly electron beam lithography (EBL) techniques. The main findings of this thesis were: Devices - Influence of gate recess offset on MESFETs The MESFETs were patterned by EBL and gate recessing was accomplished by selective dry etching. The influence of the gate recess offset on the small signal AC equivalent circuit, DC device characteristics, overall high frequency device performance, and low frequency noise behaviour of 0.2 m gate length GaAs MESFETs implemented in the low noise amplifier (LNA) circuit design in this thesis was investigated. Numerical simulations of the AC small signal equivalent circuit dependence were carried out in order to help understand the effects observed. Good qualitative agreement between measured and simulated response was obtained. - Schottky diodes The performance of Schottky-contact diodes used in the MMIC mixer were studied as a function of their geometry and processing conditions. Passives - CPW losses Losses in coplanar interconnect topologies (coplanar waveguide and slotline) using different metallisation processes were investigated. - CPW to slotline transitions A range of coplanar waveguide to slotline transitions required for the MMIC mixer were studied. Broadband performance with insertion loss of < 0.5dB per transition was observed. Transmission line models of the structures have been implemented to enable circuit performance to be predicted and designed to suit the application frequency. The effect of parasitic modes on transitions performance was also investigated.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "MESFET"

1

Radice, Richard A. Single-event analysis of LT GaAs MESFET integrated circuits. Monterey, Calif: Naval Postgraduate School, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Zhang, Weihong. GaAS MESFET large-signal model for switching power amplifiers. Ottawa: National Library of Canada, 1994.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-04513-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Simons, Rainee. Optically controlled GaAs dual-gate MESFET and permeable base transistors. [Washington, DC]: National Aeronautics and Space Administration, 1986.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Simons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. [Washington, D.C.]: National Aeronautics and Space Administration, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Mojaradi, Hadi. Wideband gallium arsenide MESFET voltage controlled oscillator for upper Ka band. Los Angeles: University of California, Los Angeles, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

Mesafe. Beyoğlu, İstanbul: Yapı Kredi Yayınları, 2011.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Valicourt, José Vidal. Meseta. Almería: El Gaviero Ediciones, 2015.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

Lynch, Janet Nichols. Messed up. New York: Scholastic, 2011.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Messed up. New York: Holiday House, 2009.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "MESFET"

1

Divekar, Dileep. "Mesfet Models." In The Kluwer International Series in Engineering and Computer Science, 145–65. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4613-1687-9_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Kellner, Walter, and Hermann Kniepkamp. "GaAs-MESFET." In GaAs-Feldeffekttransistoren, 107–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83576-6_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Kellner, Walter, and Hermann Kniepkamp. "GaAs-MESFET." In GaAs-Feldeffekttransistoren, 107–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-662-07363-6_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Snowden, Christopher M. "MESFET Modelling." In Compound Semiconductor Device Modelling, 26–55. London: Springer London, 1993. http://dx.doi.org/10.1007/978-1-4471-2048-3_2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Yngvesson, Sigfrid. "MESFET Devices." In Microwave Semiconductor Devices, 297–362. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3970-4_10.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Gianinni, F., and J. L. Garcia. "Power MESFET Modelling." In Gallium Arsenide Technology in Europe, 261–83. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-78934-2_19.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Rogers, D. L. "MESFET Compatible IMSM Detectors." In Picosecond Electronics and Optoelectronics II, 214–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72970-6_46.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Lindorfer, Ph, and S. Selberherr. "MESFET Analysis with MINIMOS." In ESSDERC ’89, 92–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_18.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Wing, Omar. "Circuit Models of the MESFET." In The Kluwer International Series in Engineering and Computer Science, 15–61. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-1541-4_2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. "Modeling of Classical SOI MESFET." In Device Physics, Modeling, Technology, and Analysis for Silicon MESFET, 43–58. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04513-5_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "MESFET"

1

Bundy, Scott, Tom Mader, Zoya Popovic, Reinold Ellinson, Dag R. Hjelme, Marc R. Surette, Michael J. Yadlowsky, and Alan R. Mickelson. "Quasioptical MESFET VCOs." In Orlando '91, Orlando, FL, edited by Regis F. Leonard and Kul B. Bhasin. SPIE, 1991. http://dx.doi.org/10.1117/12.44511.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Jastrzebski, A. K. "Non-Linear MESFET Modelling." In 17th European Microwave Conference, 1987. IEEE, 1987. http://dx.doi.org/10.1109/euma.1987.333670.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Barov, A. A., and M. G. Ignatjev. "MMIC GaAs MESFET switch." In 2004 14th International Crimean Conference "Microwave and Telecommunication Technology". IEEE, 2004. http://dx.doi.org/10.1109/crmico.2004.183134.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

ROGERS, D. L., and A. CHAU. "GaAs MESFET compatible photodetectors." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/ofc.1986.tul17.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Szreter, Miroslaw, Boguslaw Boratynski, Bogdan Paszkiewicz, and Iwona Zborowska-Lindert. "X-band GaAs MESFET." In International Conference on Microelectronics, edited by Andrzej Sowinski, Jan Grzybowski, Witold T. Kucharski, and Ryszard S. Romaniuk. SPIE, 1992. http://dx.doi.org/10.1117/12.131010.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Pauker, V., P. Dautriche, A. Giakoumis, and A. Kazeminejad. "Normally-Off Mesfet Analogue Circuits." In 16th European Microwave Conference, 1986. IEEE, 1986. http://dx.doi.org/10.1109/euma.1986.334263.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

El-Ghazaly, Samir, and Tatsuo Itoh. "Inverted-Gate GaAs Mesfet Characteristics." In 17th European Microwave Conference, 1987. IEEE, 1987. http://dx.doi.org/10.1109/euma.1987.333703.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Barov, A. A., V. J. Gunter, M. G. Ignatjev, and T. S. Petrova. "Control MMIC of GaAs MESFET." In 2005 15th International Crimean Conference Microwave and Telecommunication Technology. IEEE, 2005. http://dx.doi.org/10.1109/crmico.2005.1564858.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Armenise, Mario N., and Anna G. Perri. "Design Of MESFET Optical Amplifier." In Laser Technologies in Industry. SPIE, 1988. http://dx.doi.org/10.1117/12.968913.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Balasubramaniyan, A., T. Ivanov, and A. Mortazawi. "MESFET-based spatial power combiners." In Proceedings of SOUTHCON '94. IEEE, 1994. http://dx.doi.org/10.1109/southc.1994.498117.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "MESFET"

1

Burkhart, S. C. Voltage controlled MESFET pulse shape generator. Office of Scientific and Technical Information (OSTI), October 1994. http://dx.doi.org/10.2172/61208.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Peatman, William C. Complementary 2-D MESFET For Low Power Electronics. Fort Belvoir, VA: Defense Technical Information Center, May 1995. http://dx.doi.org/10.21236/ada294222.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

ADVANCED DEVELOPMENT LABS INC NASHUA NH. Complementary 2-D MESFET for Low Power Electronics. Fort Belvoir, VA: Defense Technical Information Center, July 1995. http://dx.doi.org/10.21236/ada297055.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Maas, Stephen A. A GaAs MESFET Mixer with Very Low Intermodulation,. Fort Belvoir, VA: Defense Technical Information Center, September 1986. http://dx.doi.org/10.21236/ada179993.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Maas, Stephen A. A GaAs MESFET Balanced Mixer with Very Low Intermodulation,. Fort Belvoir, VA: Defense Technical Information Center, August 1987. http://dx.doi.org/10.21236/ada184848.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Ahmad, Imad. Analysis of Intermodulation Distortion for MESFET Small-signal Amplifiers. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.6865.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Hwang, Vincent D., and Tatsuo Itoh. Large Signal Modeling and Analysis of the GaAs MESFET. Fort Belvoir, VA: Defense Technical Information Center, July 1986. http://dx.doi.org/10.21236/ada170304.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Lin, Jenshan, and Tatsuo Itoh. Tunable Active Microwave Bandpass Filters Using Three-Terminal MESFET Varactors. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada253504.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Peatman, William C. Complementary 2-D MESFET for Low Power Electronics. Phase 1. Fort Belvoir, VA: Defense Technical Information Center, November 1995. http://dx.doi.org/10.21236/ada301088.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Sitar, Zlatko, and Ramon Collazo. Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study. Fort Belvoir, VA: Defense Technical Information Center, June 2007. http://dx.doi.org/10.21236/ada483012.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'MESFET' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography