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Journal articles on the topic 'Memory device'

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Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

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1

Kim, Dongshin, Ik-Jyae Kim, and Jang-Sik Lee. "Memory Devices for Flexible and Neuromorphic Device Applications." Advanced Intelligent Systems 3, no. 5 (January 25, 2021): 2000206. http://dx.doi.org/10.1002/aisy.202000206.

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2

Novosad, V., Y. Otani, A. Ohsawa, S. G. Kim, K. Fukamichi, J. Koike, K. Maruyama, O. Kitakami, and Y. Shimada. "Novel magnetostrictive memory device." Journal of Applied Physics 87, no. 9 (May 2000): 6400–6402. http://dx.doi.org/10.1063/1.372719.

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3

Tatematsu, Take. "4464750 Semiconductor memory device." Microelectronics Reliability 25, no. 2 (January 1985): 401. http://dx.doi.org/10.1016/0026-2714(85)90179-9.

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4

Kim, Byeongjeong, Chandreswar Mahata, Hojeong Ryu, Muhammad Ismail, Byung-Do Yang, and Sungjun Kim. "Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures." Coatings 11, no. 4 (April 14, 2021): 451. http://dx.doi.org/10.3390/coatings11040451.

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Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions.

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5

Yang, Yang, Liping Ma, and Jianhua Wu. "Organic Thin-Film Memory." MRS Bulletin 29, no. 11 (November 2004): 833–37. http://dx.doi.org/10.1557/mrs2004.237.

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AbstractRecently, organic nonvolatile memory devices have attracted considerable attention due to their low cost and high performance. This article reviews recent developments in organic nonvolatile memory and describes in detail an organic electrical bistable device (OBD) that has potential for applications. The OBD consists of a tri-layer of organics/metal nanoclusters/organics sandwiched between top and bottom electrodes. A sufficiently high applied bias causes the metal nanoparticle layer to become polarized, resulting in charge storage near the two metal/organic interfaces. This stored charge lowers the resistance of the device and leads to an electrical switching behavior. The ON and OFF states of an OBD differ in their conductivity by several orders of magnitude and show remarkable bistability—once either state is reached, the device tends to remain in that state for a prolonged period of time. More important, the conductivity states of an OBD can be precisely controlled by the application of a positive voltage pulse (to write) or a negative voltage pulse (to erase). Device performance tests show that the OBD is a promising candidate for high-density, low-cost electrically addressable data storage applications.

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6

Wang, Lu, Yukai Zhang, and Dianzhong Wen. "Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions." Nanomaterials 11, no. 8 (July 31, 2021): 1973. http://dx.doi.org/10.3390/nano11081973.

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In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 104 s. After 104 bending cycles, the electrical characteristics remain constant. This memory device can be applied for “AND” and “OR” logic operations in programmable logic circuits. The prepared flexible and transparent biomemristor made of pure natural TH provides a promising new approach for realizing environmentally friendly and biocompatible flexible memory, nerve synapses, and wearable electronic devices.

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7

Katanosaka, Naok. "4885721 Semiconductor memory device with redundant memory cells." Microelectronics Reliability 30, no. 6 (January 1990): ii. http://dx.doi.org/10.1016/0026-2714(90)90388-4.

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8

White, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien, and Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY." International Journal of High Speed Electronics and Systems 16, no. 02 (June 2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.

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This paper describes the recent advancements in the development of nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology, which are employed in both embedded applications, such as microcontrollers, and 'stand-alone', high-density, memory applications, such as cell phones and memory 'sticks'. Multi-dielectric devices, such as the MNOS devices, were among the first NVSM; however, over the ensuing years the double polysilicon, floating-gate device has become the dominant semiconductor NVSM technology. Today, however, questions arise as to future scaling and cost effectiveness of floating gate technology – questions, which have sparked renewed interest in SONOS technology. The latter offers a single polysilicon device structure with reduced lithography steps together with compact cell layouts - compatible with 'standard' CMOS technology for cost effectiveness. In addition, SONOS technology offers performance features, such as reduced erase and write voltage levels to ease the design of peripheral memory circuits with a decrease in electric fields and localized charge storage for improved reliability and multi-bit storage, and ease of memory testing. A special feature of SONOS technology is radiation hardness, which makes this technology ideal for advanced Space and Military systems. SONOS devices use ultra-thin tunnel oxides (2nm) and operate with 'modified' Fowler-Nordheim and 'direct' tunneling in both erase and write (program) modes. A thicker tunnel oxide SONOS device (5nm), called the NROM™ device, uses 'hot electron injection for programming and 'hot hole band-to-band tunneling' for erase. The NROM™ device provides spatially isolated, two-bit storage with the possibility of multi-level charge (MLC) storage at each bit location. This paper describes the physical electronics for these device structures and their erase/write, retention and endurance characteristics. In addition, several novel SONOS device structures are discussed as potential candidates for future NVSM.

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9

Tsoukalas, Dimitris, and Emanuele Verrelli. "Inorganic Nanoparticles for either Charge Storage or Memristance Modulation." Advances in Science and Technology 77 (September 2012): 196–204. http://dx.doi.org/10.4028/www.scientific.net/ast.77.196.

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We present prototype memory devices using metallic and metal oxide nanoparticles obtained by a physical deposition technique. The two memory device examples demonstrated concern the use of platinum nanoparticles for flash-type memories and the use of titanium oxide nanoparticles for resistive memories. Both approaches give interesting device memory properties with resistive memories being still in an early exploratory phase.

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10

Li, Liang, Qi-Dan Ling, Siew-Lay Lim, Yoke-Ping Tan, Chunxiang Zhu, Daniel Siu Hhung Chan, En-Tang Kang, and Koon-Gee Neoh. "A flexible polymer memory device." Organic Electronics 8, no. 4 (August 2007): 401–6. http://dx.doi.org/10.1016/j.orgel.2007.02.002.

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11

Abdullah, Dhuha, and Reyath Mahmood. "Design Flash Memory Programmer Device." AL-Rafidain Journal of Computer Sciences and Mathematics 3, no. 1 (July 1, 2006): 55–83. http://dx.doi.org/10.33899/csmj.2006.164045.

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12

Urrios, Arturo, Javier Macia, Romilde Manzoni, Núria Conde, Adriano Bonforti, Eulàlia de Nadal, Francesc Posas, and Ricard Solé. "A Synthetic Multicellular Memory Device." ACS Synthetic Biology 5, no. 8 (August 8, 2016): 862–73. http://dx.doi.org/10.1021/acssynbio.5b00252.

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13

Gunlycke, Daniel, Denis A. Areshkin, Junwen Li, John W. Mintmire, and Carter T. White. "Graphene Nanostrip Digital Memory Device." Nano Letters 7, no. 12 (December 2007): 3608–11. http://dx.doi.org/10.1021/nl0717917.

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14

Kaminaga, Akiko, Vladimir K. Vanag, and Irving R. Epstein. "A Reaction–Diffusion Memory Device." Angewandte Chemie International Edition 45, no. 19 (May 5, 2006): 3087–89. http://dx.doi.org/10.1002/anie.200600400.

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15

Kaminaga, Akiko, Vladimir K. Vanag, and Irving R. Epstein. "A Reaction–Diffusion Memory Device." Angewandte Chemie 118, no. 19 (May 5, 2006): 3159–61. http://dx.doi.org/10.1002/ange.200600400.

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16

Lim, Doohyeok, Jaemin Son, Kyoungah Cho, and Sangsig Kim. "Quasi‐Nonvolatile Silicon Memory Device." Advanced Materials Technologies 5, no. 12 (November 8, 2020): 2000915. http://dx.doi.org/10.1002/admt.202000915.

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17

Kang, Jeong Won, and Ho Jung Hwang. "‘Carbon nanotube shuttle’ memory device." Carbon 42, no. 14 (2004): 3018–21. http://dx.doi.org/10.1016/j.carbon.2004.06.014.

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18

Li, Chao, Bo Lei, Wendy Fan, Daihua Zhang, M. Meyyappan, and Chongwu Zhou. "Molecular Memory Based on Nanowire–Molecular Wire Heterostructures." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 138–50. http://dx.doi.org/10.1166/jnn.2007.18011.

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This article reviews the recent research of molecular memory based on self-assembled nanowire–molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.

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19

Li, Lei. "Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices." Nanomaterials 9, no. 4 (April 2, 2019): 518. http://dx.doi.org/10.3390/nano9040518.

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A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.

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20

Zheng, Yichu, Axel Fischer, Michael Sawatzki, Duy Hai Doan, Matthias Liero, Annegret Glitzky, Sebastian Reineke, and Stefan C. B. Mannsfeld. "Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device." Advanced Functional Materials 30, no. 4 (November 7, 2019): 1907119. http://dx.doi.org/10.1002/adfm.201907119.

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21

Aoyama, Keizo, Teruo Seki, and Takahik Yamauchi. "4587639 Static semiconductor memory device incorporating redundancy memory cells." Microelectronics Reliability 27, no. 1 (January 1987): 197. http://dx.doi.org/10.1016/0026-2714(87)90753-0.

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22

Wu, Ya-Huei, Manon Lewis, and Anne-Sophie Rigaud. "Cognitive Function and Digital Device Use in Older Adults Attending a Memory Clinic." Gerontology and Geriatric Medicine 5 (January 2019): 233372141984488. http://dx.doi.org/10.1177/2333721419844886.

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This study investigated cognitive function in relation to the use of a computer and a touchscreen device among older adults attending a memory clinic. The entire sample ( n = 323) was categorized into four profiles, according to the frequency of digital device use (either daily or non-daily usage). Results showed that on a daily basis, 26% of the sample used both a computer and a touchscreen device, 26.9% used only a computer, 7.1% used only a touchscreen device, and 39.9% used neither type of digital device. There were significant group differences on age, education, and clinical diagnosis ( p < .001). Non-daily users of digital devices had significantly lower performance, compared with daily users of both types of digital device, on measures of global cognitive function, processing speed, short-term memory, and several components of executive function ( p < .001). Falling behind with regard to the use of digital devices might reflect underlying poor cognitive capacities.

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23

Liang, Lijuan, Wenjuan He, Rong Cao, Xianfu Wei, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, Changshuai Ding, Xuying Liu, and Norihisa Kobayashi. "Non-Volatile Transistor Memory with a Polypeptide Dielectric." Molecules 25, no. 3 (January 23, 2020): 499. http://dx.doi.org/10.3390/molecules25030499.

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Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-l-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in transfer curves. However, PBLG blended with PMMA led to a remarkable increase in memory window up to 20 V. The device performance was observed to remarkably depend on the blend ratio. This study suggests the crystal structure and the molecular alignment significantly affect the electrical performance in transistor-type memory devices, thereby provides an alternative to prepare nonvolatile memory with polymer dielectrics.

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24

Alahmadi, Ahmed N. M., and Khasan S. Karimov. "A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device." Polymers 13, no. 10 (May 15, 2021): 1594. http://dx.doi.org/10.3390/polym13101594.

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Generally, polymer-based memory devices store information in a manner distinct from that of silicon-based memory devices. Conventional silicon memory devices store charges as either zero or one for digital information, whereas most polymers store charges by the switching of electrical resistance. For the first time, this study reports that the novel conducting polymer Poly-N-Epoxy-Propyl Carbazole (PEPC) can offer effective memory storage behavior. In the current research, the electrical characterization of a single layer memory device (metal/polymer/metal) using PEPC, with or without doping of charge transfer complexes 7,7,8,8-tetra-cyanoquino-dimethane (TCNQ), was investigated. From the current–voltage characteristics, it was found that PEPC shows memory switching effects in both cases (with or without the TCNQ complex). However, in the presence of TCNQ, the PEPC performs faster memory switching at relatively lower voltage and, therefore, a higher ON and OFF ratio (ION/IOFF ~ 100) was observed. The outcome of this study may help to further understand the memory switching effects of conducting polymer.

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25

Garg, Meenu, Sheifali Gupta, Rakesh Ahuja, and Deepali Gupta. "Diabetic Retinopathy Prediction Device System." Journal of Computational and Theoretical Nanoscience 16, no. 10 (October 1, 2019): 4266–70. http://dx.doi.org/10.1166/jctn.2019.8511.

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The present study relates to diagnostic devices, and more specifically, to a diabetic retinopathy prediction device, system and method for early prediction of diabetic retinopathy with application of deep learning. The device includes an image capturing device, a memory coupled to processor. The image capturing device obtains a retinal fundus image from the user. The memory comprising executable instructions which upon execution by the processor configures the device to obtain physiological parameters of the user in real-time from the image capturing device, retrieve the obtained retinal fundus image and the one or more obtained physiological parameters and compare the one or more extracted features with at least one pre-stored feature in a database to generate at least a prediction result indicative of detection of the presence, the progression or the treatment effect of the disease in the user.

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26

Ahmad, Hamza Sajjad, Muhammad Junaid Arshad, and Muhammad Sohail Akram. "Device Authentication and Data Encryption for IoT Network by Using Improved Lightweight SAFER Encryption With S-Boxes." International Journal of Embedded and Real-Time Communication Systems 12, no. 3 (July 2021): 1–13. http://dx.doi.org/10.4018/ijertcs.2021070101.

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To send data over the network, devices need to authenticate themselves within the network. After authentication, the device will be able to send the data in-network. After authentication, secure communication of devices is an important task that is done with an encryption method. IoT network devices have a very small circuit with low resources and low computation power. By considering low power, less memory, low computation, and all the aspect of IoT devices, an encryption technique is needed that is suitable for this type of device. As IoT networks are heterogeneous, each device has different hardware properties, and all the devices are not on one scale. To make IoT networks secure, this paper starts with the secure authentication mechanism to verify the device that wants to be a part of the network. After that, an encryption algorithm is presented that will make the communication secure. This encryption algorithm is designed by considering all the important aspects of IoT devices (low computation, low memory, and cost).

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27

Patil, Harshada, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, and Deok-kee Kim. "Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction." Nanomaterials 11, no. 2 (February 1, 2021): 359. http://dx.doi.org/10.3390/nano11020359.

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Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.

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28

Tsoukalas, D. "From silicon to organic nanoparticle memory devices." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 367, no. 1905 (October 28, 2009): 4169–79. http://dx.doi.org/10.1098/rsta.2008.0280.

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After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

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29

Shin, Youngjoo. "A VM-Based Detection Framework against Remote Code Execution Attacks for Closed Source Network Devices." Applied Sciences 9, no. 7 (March 28, 2019): 1294. http://dx.doi.org/10.3390/app9071294.

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Remote code execution attacks against network devices become major challenges in securing networking environments. In this paper, we propose a detection framework against remote code execution attacks for closed source network devices using virtualization technologies. Without disturbing a target device in any way, our solution deploys an emulated device as a virtual machine (VM) instance running the same firmware image as the target in a way that ingress packets are mirrored to the emulated device. By doing so, remote code execution attacks mounted by maliciously crafted packets will be captured in memory of the VM. This way, our solution enables successful detection of any kind of intrusions that leaves memory footprints.

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30

Stiller, Allison, Joshua Usoro, Jennifer Lawson, Betsiti Araya, María González-González, Vindhya Danda, Walter Voit, Bryan Black, and Joseph Pancrazio. "Mechanically Robust, Softening Shape Memory Polymer Probes for Intracortical Recording." Micromachines 11, no. 6 (June 25, 2020): 619. http://dx.doi.org/10.3390/mi11060619.

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While intracortical microelectrode arrays (MEAs) may be useful in a variety of basic and clinical scenarios, their implementation is hindered by a variety of factors, many of which are related to the stiff material composition of the device. MEAs are often fabricated from high modulus materials such as silicon, leaving devices vulnerable to brittle fracture and thus complicating device fabrication and handling. For this reason, polymer-based devices are being heavily investigated; however, their implementation is often difficult due to mechanical instability that requires insertion aids during implantation. In this study, we design and fabricate intracortical MEAs from a shape memory polymer (SMP) substrate that remains stiff at room temperature but softens to 20 MPa after implantation, therefore allowing the device to be implanted without aids. We demonstrate chronic recordings and electrochemical measurements for 16 weeks in rat cortex and show that the devices are robust to physical deformation, therefore making them advantageous for surgical implementation.

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31

Zhao, Enming, Xiaodan Liu, Guangyu Liu, and Bao Zhou. "Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device." Journal of Nanomaterials 2019 (August 21, 2019): 1–8. http://dx.doi.org/10.1155/2019/9214186.

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Electrical characterization indicates that the nonvolatile write once read many (WORM) times/volatile static random access memory (SRAM) conversion was triggered by the composite of the oxadiazole small molecule. FTO/PMMA/Ag device possesses nonvolatile WORM memory behavior, while the FTO/PMMA+oxadiazole/Ag device shows vastly different volatile SRAM feature. The FTO/PMMA/Ag and FTO/PMMA+oxadiazole/Ag memory devices both exhibit high ON/OFF ratio nearly 104. The additive oxadiazole small molecule in the polymethyl methacrylate was suggested to form an internal electrode and serve as a channel during the charge transfer process, which is easy to both the charge transfer and back charge transfer, as a consequence, the WORM/SRAM conversion upon oxadiazole small molecule complexation was triggered. The results observed in this work manifest the significance of oxadiazole small molecule to the memory effects and will arouse the research interest about small molecule composite applied in memory devices.

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32

Muschenborn, Andrea D., Keith Hearon, Brent L. Volk, Jordan W. Conway, and Duncan J. Maitland. "Feasibility of Crosslinked Acrylic Shape Memory Polymer for a Thrombectomy Device." Smart Materials Research 2014 (February 25, 2014): 1–12. http://dx.doi.org/10.1155/2014/971087.

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Purpose. To evaluate the feasibility of utilizing a system of SMP acrylates for a thrombectomy device by determining an optimal crosslink density that provides both adequate recovery stress for blood clot removal and sufficient strain capacity to enable catheter delivery. Methods. Four thermoset acrylic copolymers containing benzyl methacrylate (BzMA) and bisphenol A ethoxylate diacrylate (Mn∼512, BPA) were designed with differing thermomechanical properties. Finite element analysis (FEA) was performed to ensure that the materials were able to undergo the strains imposed by crimping, and fabricated devices were subjected to force-monitored crimping, constrained recovery, and bench-top thrombectomy. Results. Devices with 25 and 35 mole% BPA exhibited the highest recovery stress and the highest brittle response as they broke upon constrained recovery. On the contrary, the 15 mole% BPA devices endured all testing and their recovery stress (5 kPa) enabled successful bench-top thrombectomy in 2/3 times, compared to 0/3 for the devices with the lowest BPA content. Conclusion. While the 15 mole% BPA devices provided the best trade-off between device integrity and performance, other SMP systems that offer recovery stresses above 5 kPa without increasing brittleness to the point of causing device failure would be more suitable for this application.

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33

Cardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari, and Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device." Electronics 9, no. 2 (February 7, 2020): 287. http://dx.doi.org/10.3390/electronics9020287.

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An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a synthesized ZnO–rGO as an active layer on fluorine-doped tin oxide (FTO)-coated glass substrate. Aluminum (Al) is deposited as a top metal contact on the ZnO–rGO active layer to complete the device. Photo annealing was used to reduce the GO to rGO to make the proposed method suitable for fabricating ZnO–rGO thin-film devices on flexible substrates. The electrical characterization of the Al–ZnO–rGO–FTO device confirms the coexistence of memristive and memimpedance characteristics. The coexistence of memory resistance and memory impedance in the same device could be valuable for developing novel programmable analog filters and self-resonating circuits and systems.

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34

Holt, Joshua S., Karsten Beckmann, Zahiruddin Alamgir, Jean Yang-Scharlotta, and Nathaniel C. Cady. "Effect of Displacement Damage on Tantalum Oxide Resistive Memory." MRS Advances 2, no. 52 (2017): 3011–17. http://dx.doi.org/10.1557/adv.2017.422.

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ABSTRACTThe radiation environment of space poses a challenge for electronic systems, in particular flash memory, which contains multiple radiation-sensitive parts. Resistive memory (RRAM) devices have the potential to replace flash memory, functioning as an inherently radiation resistant memory device. Several studies indicate significant radiation resistance in RRAM devices to a broad range of radiation types and doses. In this study, we focus on the effect of displacement damage on tantalum oxide-based RRAM devices, as this form of damage is likely a worst-case scenario. An Ar+ (170 keV) ion beam was used to minimize any contribution from ionization damage, maximizing the effect of displacement damage. Fluence levels were chosen to generate enough oxygen vacancies such that devices in the high resistance state (HRS) would likely switch to the low resistance state (LRS). More than half of devices tested at the highest fluence level (1.43E13 ions/cm2) switched from HRS to LRS. The devices were then switched for 50 set/reset cycles, after which the radiation-induced resistance shift disappeared. These results suggest that device switching may mitigate radiation damage by accelerating oxygen vacancy-interstitial recombination.

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35

Naqi, Muhammad, Nayoung Kwon, Sung Jung, Pavan Pujar, Hae Cho, Yong Cho, Hyung Cho, Byungkwon Lim, and Sunkook Kim. "High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles." Nanomaterials 11, no. 5 (April 24, 2021): 1101. http://dx.doi.org/10.3390/nano11051101.

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Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from −20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.

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MAKIKAWA, Masaaki, Katsunobu IMAI, Takashi SHINDOI, Kazuki TANOOKA, Hitomi IIZUMI, and Hisashi MITANI. "Microprocessor-Based Ambulatory Biosignal Memory Device." Transactions of the Society of Instrument and Control Engineers 29, no. 8 (1993): 888–95. http://dx.doi.org/10.9746/sicetr1965.29.888.

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Shishkin, S. V. "Thermomechanical Device Based on Shape Memory." Russian Engineering Research 39, no. 12 (December 2019): 993–96. http://dx.doi.org/10.3103/s1068798x19120190.

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Joo, Won-Jae, Tae-Lim Choi, and Kwang-Hee Lee. "Embossed structure embedded organic memory device." Thin Solid Films 516, no. 10 (March 2008): 3133–37. http://dx.doi.org/10.1016/j.tsf.2007.08.116.

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Kolliopoulou, S., P. Dimitrakis, P. Normand, Hao-Li Zhang, Nicola Cant, Stephen D. Evans, S. Paul, et al. "Hybrid silicon–organic nanoparticle memory device." Journal of Applied Physics 94, no. 8 (2003): 5234. http://dx.doi.org/10.1063/1.1604962.

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Yoo, K.-H., K. S. Park, Jinhee Kim, Myungsoo Lee, and Jung-Woo Kim. "A silicon-molecular hybrid memory device." Nanotechnology 15, no. 11 (September 4, 2004): 1472–74. http://dx.doi.org/10.1088/0957-4484/15/11/016.

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Cha, Ho-Young, Huaqiang Wu, Soodoo Chae, and Michael G. Spencer. "Gallium nitride nanowire nonvolatile memory device." Journal of Applied Physics 100, no. 2 (July 15, 2006): 024307. http://dx.doi.org/10.1063/1.2216488.

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Fierens, P. I., S. A. Ibáñez, R. P. J. Perazzo, G. A. Patterson, and D. F. Grosz. "A memory device sustained by noise." Physics Letters A 374, no. 22 (May 2010): 2207–9. http://dx.doi.org/10.1016/j.physleta.2010.03.026.

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Ahn, Jong-Hyun, Hyouk Lee, and Sung-Hoon Choa. "Technology of Flexible Semiconductor/Memory Device." Journal of the Microelectronics and Packaging Society 20, no. 2 (June 30, 2013): 1–9. http://dx.doi.org/10.6117/kmeps.2013.20.2.001.

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Kang, Jeong Won, and Qing Jiang. "Electrostatically telescoping nanotube nonvolatile memory device." Nanotechnology 18, no. 9 (January 24, 2007): 095705. http://dx.doi.org/10.1088/0957-4484/18/9/095705.

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Overby, M., A. Chernyshov, L. P. Rokhinson, X. Liu, and J. K. Furdyna. "GaMnAs-based hybrid multiferroic memory device." Applied Physics Letters 92, no. 19 (May 12, 2008): 192501. http://dx.doi.org/10.1063/1.2917481.

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Bhatnagar, Priyanka, Thanh Tai Nguyen, Sangho Kim, Ji Heun Seo, Malkeshkumar Patel, and Joondong Kim. "Transparent photovoltaic memory for neuromorphic device." Nanoscale 13, no. 10 (2021): 5243–50. http://dx.doi.org/10.1039/d0nr08966d.

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Lee, Sang Youl, Jae Sub Oh, Seung Dong Yang, Ho Jin Yun, Kwang Seok Jeong, Yu Mi Kim, Hi Deok Lee, and Ga Won Lee. "Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO₂ and Si₃N₄ Buffer Layer for System on Panels Application." Advanced Materials Research 658 (January 2013): 120–23. http://dx.doi.org/10.4028/www.scientific.net/amr.658.120.

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For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

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Al-Mamun, M., and M. Orlowski. "Performance Degradation Due to Nonlocal Heating Effects in Resistive ReRAM Memory Arrays." MRS Advances 4, no. 48 (2019): 2593–600. http://dx.doi.org/10.1557/adv.2019.265.

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ABSTRACTFrequent switching of resistive memory cell may lead to a local accumulation of Joules heat in the device. Since the ReRAM cells are arranged in crossbar arrays with the two electrodes running perpendicular to each other, the heat generated in one device spreads via common electrode metal lines to the neighboring cells causing their performance degradation. Also cells that do not share any of the two electrodes (e.g. the diagonal array cells) with the hot device may also degrade provided the intermediate cells are set to an on-state establishing thus a continuous thermal conduction path between the heated and the probed device. It is found that the heat conduction along the active Cu electrode is more pronounced than that along the inert Pt electrode. Devices with Rh inert electrode performed better than those with Pt electrode due to better heat conductivity properties of Rh vs Pt. The heat dissipation is also found worse for a heated device with narrow and thin lines causing, however less degradation of more distant neighbor cells than for wide and thick metal lines. Finally, there is a trade-off between dissipating the heat quickly form the heated device to increase its maximum switching cycles and the heat exposure of the neighboring devices.

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Salaoru, Iulia, and Shashi Paul. "Memory Effect of a Different Materials as Charge Storage Elements for Memory Applications." Advances in Science and Technology 77 (September 2012): 205–8. http://dx.doi.org/10.4028/www.scientific.net/ast.77.205.

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In recent years, the interest in the application of organic materials in electronic devices (light emitting diodes, field effect transistors, solar cells), has shown a rapid increase. Polymer memory devices (PDMs) is a very recent addition to the organic electronics. The polymer memory devices can be fabricated by depositing a blend (an admixture of organic polymer, small organic molecules and metal or semiconductor nanoparticles) between two metal electrodes. We demonstrate the memory effect in the device with simple structure based on blend of polymer with different materials like ionic compound (NaCl), ferroelectrical nano-particles (BaTiO3) and small organic molecules In 2007 Paul has proposed a model to explain memory effect a switching between two distinctive conductivity states when voltage is applied based on electrical dipole formation in the polymer matrix. Here, we investigate if our memory devices based on different types of materials are fitted with the proposed model.

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Hwang, Yeongjin, Jeong Hoon Jeon, Juhyun Lee, Jonghyuk Yoon, Felix Sunjoo Kim, and Hyungjin Kim. "Effect of Threshold Voltage Window and Variation of Organic Synaptic Transistor for Neuromorphic System." Journal of Nanoscience and Nanotechnology 21, no. 8 (August 1, 2021): 4303–9. http://dx.doi.org/10.1166/jnn.2021.19393.

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Synaptic devices, which are considered as one of the most important components of neuromorphic system, require a memory effect to store weight values, a high integrity for compact system, and a wide window to guarantee an accurate programming between each weight level. In this regard, memristive devices such as resistive random access memory (RRAM) and phase change memory (PCM) have been intensely studied; however, these devices have quite high current-level despite their state, which would be an issue if a deep and massive neural network is implemented with these devices since a large amount of current-sum needs to flow through a single electrode line. Organic transistor is one of the potential candidates as synaptic device owing to flexibility and a low current drivability for low power consumption during inference. In this paper, we investigate the performance and power consumption of neuromorphic system composed of organic synaptic transistors conducting a pattern recognition simulation with MNIST handwritten digit data set. It is analyzed according to threshold voltage (VT) window, device variation, and the number of available states. The classification accuracy is not affected by VT window if the device variation is not considered, but the current sum ratio between answer node and the rest 9 nodes varies. In contrast, the accuracy is significantly degraded as increasing the device variation; however, the classification rate is less affected when the number of device states is fewer.

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