Journal articles on the topic 'Memory device'
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Kim, Dongshin, Ik-Jyae Kim, and Jang-Sik Lee. "Memory Devices for Flexible and Neuromorphic Device Applications." Advanced Intelligent Systems 3, no. 5 (January 25, 2021): 2000206. http://dx.doi.org/10.1002/aisy.202000206.
Full textNovosad, V., Y. Otani, A. Ohsawa, S. G. Kim, K. Fukamichi, J. Koike, K. Maruyama, O. Kitakami, and Y. Shimada. "Novel magnetostrictive memory device." Journal of Applied Physics 87, no. 9 (May 2000): 6400–6402. http://dx.doi.org/10.1063/1.372719.
Full textTatematsu, Take. "4464750 Semiconductor memory device." Microelectronics Reliability 25, no. 2 (January 1985): 401. http://dx.doi.org/10.1016/0026-2714(85)90179-9.
Full textKim, Byeongjeong, Chandreswar Mahata, Hojeong Ryu, Muhammad Ismail, Byung-Do Yang, and Sungjun Kim. "Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures." Coatings 11, no. 4 (April 14, 2021): 451. http://dx.doi.org/10.3390/coatings11040451.
Full textYang, Yang, Liping Ma, and Jianhua Wu. "Organic Thin-Film Memory." MRS Bulletin 29, no. 11 (November 2004): 833–37. http://dx.doi.org/10.1557/mrs2004.237.
Full textWang, Lu, Yukai Zhang, and Dianzhong Wen. "Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions." Nanomaterials 11, no. 8 (July 31, 2021): 1973. http://dx.doi.org/10.3390/nano11081973.
Full textKatanosaka, Naok. "4885721 Semiconductor memory device with redundant memory cells." Microelectronics Reliability 30, no. 6 (January 1990): ii. http://dx.doi.org/10.1016/0026-2714(90)90388-4.
Full textWhite, Marvin H., Yu (Richard) Wang, Stephen J. Wrazien, and Yijie (Sandy) Zhao. "ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY." International Journal of High Speed Electronics and Systems 16, no. 02 (June 2006): 479–501. http://dx.doi.org/10.1142/s0129156406003801.
Full textTsoukalas, Dimitris, and Emanuele Verrelli. "Inorganic Nanoparticles for either Charge Storage or Memristance Modulation." Advances in Science and Technology 77 (September 2012): 196–204. http://dx.doi.org/10.4028/www.scientific.net/ast.77.196.
Full textLi, Liang, Qi-Dan Ling, Siew-Lay Lim, Yoke-Ping Tan, Chunxiang Zhu, Daniel Siu Hhung Chan, En-Tang Kang, and Koon-Gee Neoh. "A flexible polymer memory device." Organic Electronics 8, no. 4 (August 2007): 401–6. http://dx.doi.org/10.1016/j.orgel.2007.02.002.
Full textAbdullah, Dhuha, and Reyath Mahmood. "Design Flash Memory Programmer Device." AL-Rafidain Journal of Computer Sciences and Mathematics 3, no. 1 (July 1, 2006): 55–83. http://dx.doi.org/10.33899/csmj.2006.164045.
Full textUrrios, Arturo, Javier Macia, Romilde Manzoni, Núria Conde, Adriano Bonforti, Eulàlia de Nadal, Francesc Posas, and Ricard Solé. "A Synthetic Multicellular Memory Device." ACS Synthetic Biology 5, no. 8 (August 8, 2016): 862–73. http://dx.doi.org/10.1021/acssynbio.5b00252.
Full textGunlycke, Daniel, Denis A. Areshkin, Junwen Li, John W. Mintmire, and Carter T. White. "Graphene Nanostrip Digital Memory Device." Nano Letters 7, no. 12 (December 2007): 3608–11. http://dx.doi.org/10.1021/nl0717917.
Full textKaminaga, Akiko, Vladimir K. Vanag, and Irving R. Epstein. "A Reaction–Diffusion Memory Device." Angewandte Chemie International Edition 45, no. 19 (May 5, 2006): 3087–89. http://dx.doi.org/10.1002/anie.200600400.
Full textKaminaga, Akiko, Vladimir K. Vanag, and Irving R. Epstein. "A Reaction–Diffusion Memory Device." Angewandte Chemie 118, no. 19 (May 5, 2006): 3159–61. http://dx.doi.org/10.1002/ange.200600400.
Full textLim, Doohyeok, Jaemin Son, Kyoungah Cho, and Sangsig Kim. "Quasi‐Nonvolatile Silicon Memory Device." Advanced Materials Technologies 5, no. 12 (November 8, 2020): 2000915. http://dx.doi.org/10.1002/admt.202000915.
Full textKang, Jeong Won, and Ho Jung Hwang. "‘Carbon nanotube shuttle’ memory device." Carbon 42, no. 14 (2004): 3018–21. http://dx.doi.org/10.1016/j.carbon.2004.06.014.
Full textLi, Chao, Bo Lei, Wendy Fan, Daihua Zhang, M. Meyyappan, and Chongwu Zhou. "Molecular Memory Based on Nanowire–Molecular Wire Heterostructures." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 138–50. http://dx.doi.org/10.1166/jnn.2007.18011.
Full textLi, Lei. "Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices." Nanomaterials 9, no. 4 (April 2, 2019): 518. http://dx.doi.org/10.3390/nano9040518.
Full textZheng, Yichu, Axel Fischer, Michael Sawatzki, Duy Hai Doan, Matthias Liero, Annegret Glitzky, Sebastian Reineke, and Stefan C. B. Mannsfeld. "Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device." Advanced Functional Materials 30, no. 4 (November 7, 2019): 1907119. http://dx.doi.org/10.1002/adfm.201907119.
Full textAoyama, Keizo, Teruo Seki, and Takahik Yamauchi. "4587639 Static semiconductor memory device incorporating redundancy memory cells." Microelectronics Reliability 27, no. 1 (January 1987): 197. http://dx.doi.org/10.1016/0026-2714(87)90753-0.
Full textWu, Ya-Huei, Manon Lewis, and Anne-Sophie Rigaud. "Cognitive Function and Digital Device Use in Older Adults Attending a Memory Clinic." Gerontology and Geriatric Medicine 5 (January 2019): 233372141984488. http://dx.doi.org/10.1177/2333721419844886.
Full textLiang, Lijuan, Wenjuan He, Rong Cao, Xianfu Wei, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, Changshuai Ding, Xuying Liu, and Norihisa Kobayashi. "Non-Volatile Transistor Memory with a Polypeptide Dielectric." Molecules 25, no. 3 (January 23, 2020): 499. http://dx.doi.org/10.3390/molecules25030499.
Full textAlahmadi, Ahmed N. M., and Khasan S. Karimov. "A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device." Polymers 13, no. 10 (May 15, 2021): 1594. http://dx.doi.org/10.3390/polym13101594.
Full textGarg, Meenu, Sheifali Gupta, Rakesh Ahuja, and Deepali Gupta. "Diabetic Retinopathy Prediction Device System." Journal of Computational and Theoretical Nanoscience 16, no. 10 (October 1, 2019): 4266–70. http://dx.doi.org/10.1166/jctn.2019.8511.
Full textAhmad, Hamza Sajjad, Muhammad Junaid Arshad, and Muhammad Sohail Akram. "Device Authentication and Data Encryption for IoT Network by Using Improved Lightweight SAFER Encryption With S-Boxes." International Journal of Embedded and Real-Time Communication Systems 12, no. 3 (July 2021): 1–13. http://dx.doi.org/10.4018/ijertcs.2021070101.
Full textPatil, Harshada, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, and Deok-kee Kim. "Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction." Nanomaterials 11, no. 2 (February 1, 2021): 359. http://dx.doi.org/10.3390/nano11020359.
Full textTsoukalas, D. "From silicon to organic nanoparticle memory devices." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 367, no. 1905 (October 28, 2009): 4169–79. http://dx.doi.org/10.1098/rsta.2008.0280.
Full textShin, Youngjoo. "A VM-Based Detection Framework against Remote Code Execution Attacks for Closed Source Network Devices." Applied Sciences 9, no. 7 (March 28, 2019): 1294. http://dx.doi.org/10.3390/app9071294.
Full textStiller, Allison, Joshua Usoro, Jennifer Lawson, Betsiti Araya, María González-González, Vindhya Danda, Walter Voit, Bryan Black, and Joseph Pancrazio. "Mechanically Robust, Softening Shape Memory Polymer Probes for Intracortical Recording." Micromachines 11, no. 6 (June 25, 2020): 619. http://dx.doi.org/10.3390/mi11060619.
Full textZhao, Enming, Xiaodan Liu, Guangyu Liu, and Bao Zhou. "Triggering WORM/SRAM Memory Conversion by Composite Oxadiazole in Polymer Resistive Switching Device." Journal of Nanomaterials 2019 (August 21, 2019): 1–8. http://dx.doi.org/10.1155/2019/9214186.
Full textMuschenborn, Andrea D., Keith Hearon, Brent L. Volk, Jordan W. Conway, and Duncan J. Maitland. "Feasibility of Crosslinked Acrylic Shape Memory Polymer for a Thrombectomy Device." Smart Materials Research 2014 (February 25, 2014): 1–12. http://dx.doi.org/10.1155/2014/971087.
Full textCardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari, and Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device." Electronics 9, no. 2 (February 7, 2020): 287. http://dx.doi.org/10.3390/electronics9020287.
Full textHolt, Joshua S., Karsten Beckmann, Zahiruddin Alamgir, Jean Yang-Scharlotta, and Nathaniel C. Cady. "Effect of Displacement Damage on Tantalum Oxide Resistive Memory." MRS Advances 2, no. 52 (2017): 3011–17. http://dx.doi.org/10.1557/adv.2017.422.
Full textNaqi, Muhammad, Nayoung Kwon, Sung Jung, Pavan Pujar, Hae Cho, Yong Cho, Hyung Cho, Byungkwon Lim, and Sunkook Kim. "High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles." Nanomaterials 11, no. 5 (April 24, 2021): 1101. http://dx.doi.org/10.3390/nano11051101.
Full textMAKIKAWA, Masaaki, Katsunobu IMAI, Takashi SHINDOI, Kazuki TANOOKA, Hitomi IIZUMI, and Hisashi MITANI. "Microprocessor-Based Ambulatory Biosignal Memory Device." Transactions of the Society of Instrument and Control Engineers 29, no. 8 (1993): 888–95. http://dx.doi.org/10.9746/sicetr1965.29.888.
Full textShishkin, S. V. "Thermomechanical Device Based on Shape Memory." Russian Engineering Research 39, no. 12 (December 2019): 993–96. http://dx.doi.org/10.3103/s1068798x19120190.
Full textJoo, Won-Jae, Tae-Lim Choi, and Kwang-Hee Lee. "Embossed structure embedded organic memory device." Thin Solid Films 516, no. 10 (March 2008): 3133–37. http://dx.doi.org/10.1016/j.tsf.2007.08.116.
Full textKolliopoulou, S., P. Dimitrakis, P. Normand, Hao-Li Zhang, Nicola Cant, Stephen D. Evans, S. Paul, et al. "Hybrid silicon–organic nanoparticle memory device." Journal of Applied Physics 94, no. 8 (2003): 5234. http://dx.doi.org/10.1063/1.1604962.
Full textYoo, K.-H., K. S. Park, Jinhee Kim, Myungsoo Lee, and Jung-Woo Kim. "A silicon-molecular hybrid memory device." Nanotechnology 15, no. 11 (September 4, 2004): 1472–74. http://dx.doi.org/10.1088/0957-4484/15/11/016.
Full textCha, Ho-Young, Huaqiang Wu, Soodoo Chae, and Michael G. Spencer. "Gallium nitride nanowire nonvolatile memory device." Journal of Applied Physics 100, no. 2 (July 15, 2006): 024307. http://dx.doi.org/10.1063/1.2216488.
Full textFierens, P. I., S. A. Ibáñez, R. P. J. Perazzo, G. A. Patterson, and D. F. Grosz. "A memory device sustained by noise." Physics Letters A 374, no. 22 (May 2010): 2207–9. http://dx.doi.org/10.1016/j.physleta.2010.03.026.
Full textAhn, Jong-Hyun, Hyouk Lee, and Sung-Hoon Choa. "Technology of Flexible Semiconductor/Memory Device." Journal of the Microelectronics and Packaging Society 20, no. 2 (June 30, 2013): 1–9. http://dx.doi.org/10.6117/kmeps.2013.20.2.001.
Full textKang, Jeong Won, and Qing Jiang. "Electrostatically telescoping nanotube nonvolatile memory device." Nanotechnology 18, no. 9 (January 24, 2007): 095705. http://dx.doi.org/10.1088/0957-4484/18/9/095705.
Full textOverby, M., A. Chernyshov, L. P. Rokhinson, X. Liu, and J. K. Furdyna. "GaMnAs-based hybrid multiferroic memory device." Applied Physics Letters 92, no. 19 (May 12, 2008): 192501. http://dx.doi.org/10.1063/1.2917481.
Full textBhatnagar, Priyanka, Thanh Tai Nguyen, Sangho Kim, Ji Heun Seo, Malkeshkumar Patel, and Joondong Kim. "Transparent photovoltaic memory for neuromorphic device." Nanoscale 13, no. 10 (2021): 5243–50. http://dx.doi.org/10.1039/d0nr08966d.
Full textLee, Sang Youl, Jae Sub Oh, Seung Dong Yang, Ho Jin Yun, Kwang Seok Jeong, Yu Mi Kim, Hi Deok Lee, and Ga Won Lee. "Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application." Advanced Materials Research 658 (January 2013): 120–23. http://dx.doi.org/10.4028/www.scientific.net/amr.658.120.
Full textAl-Mamun, M., and M. Orlowski. "Performance Degradation Due to Nonlocal Heating Effects in Resistive ReRAM Memory Arrays." MRS Advances 4, no. 48 (2019): 2593–600. http://dx.doi.org/10.1557/adv.2019.265.
Full textSalaoru, Iulia, and Shashi Paul. "Memory Effect of a Different Materials as Charge Storage Elements for Memory Applications." Advances in Science and Technology 77 (September 2012): 205–8. http://dx.doi.org/10.4028/www.scientific.net/ast.77.205.
Full textHwang, Yeongjin, Jeong Hoon Jeon, Juhyun Lee, Jonghyuk Yoon, Felix Sunjoo Kim, and Hyungjin Kim. "Effect of Threshold Voltage Window and Variation of Organic Synaptic Transistor for Neuromorphic System." Journal of Nanoscience and Nanotechnology 21, no. 8 (August 1, 2021): 4303–9. http://dx.doi.org/10.1166/jnn.2021.19393.
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