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Relevant bibliographies by topics / Material modifications by ion beam

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Academic literature on the topic 'Material modifications by ion beam'

Author: Grafiati

Published: 28 June 2021

Last updated: 9 February 2022

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Journal articles on the topic "Material modifications by ion beam"

1

Feng, Y. C., X. G. Li, and S. T. Yang. "Electron beam evaporation broad beam metal ion source for material modifications." Review of Scientific Instruments 67, no. 3 (March 1996): 924–26. http://dx.doi.org/10.1063/1.1146773.

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Ramola, R. C., and Subhash Chandra. "Ion Beam Induced Modifications in Conducting Polymers." Defect and Diffusion Forum 341 (July 2013): 69–105. http://dx.doi.org/10.4028/www.scientific.net/ddf.341.69.

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High energy ion beam induced modifications in polymeric materials is of great interest from the point of view of characterization and development of various structures and filters. Due to potential use of conducting polymers in light weight rechargeable batteries, magnetic storage media, optical computers, molecular electronics, biological and thermal sensors, the impact of swift heavy ions for the changes in electrical, structural and optical properties of polymers is desirable. The high energy ion beam irradiation of polymer is a sensitive technique to enhance its electrical conductivity, structural, mechanical and optical properties. Recent progress in the radiation effects of ion beams on conducting polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on conductive polymers is described. The electrical, structural and optical properties of irradiated films were analyzed using V-I, X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV-Visible spectroscopy and Fourier transform infrared spectroscopy methods.

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Abdul-Kader, A. M., and Andrzej Turos. "Ion Beam Induced Modifications of Biocompatible Polymer." Solid State Phenomena 239 (August 2015): 149–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.239.149.

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Ion beam bombardment has shown great potential for improving the surface properties of polymers. In this paper, the ion beam-polymer interaction mechanisms are briefly discussed. The main objective of this research was to study the effects of H-ion beam on physico-chemical properties of Ultra-high-molecular-weight polyethylene (UHMWPE) as it is frequently used in biomedical applications. UHMWPE was bombarded with 65 keV H-ions to fluences ranging from 1x1014–2x1016 ions/cm2. Changes of surface layer composition produced by ion bombardment of UHMWPE samples were studied. The hydrogen release and oxygen uptake induced by ion beam bombardment were determined by Nuclear reaction analysis (NRA) using the 1H(15N, αγ)12C and Rutherford backscattering spectrometry (RBS), respectively. Tribological and hardness properties at the polymer near surface region were studied by means of friction coefficient and micro-hardness testers, respectively. Wettability of the bombarded surfaces was determined by measuring the contact angle for distilled water. The obtained results showed that the ion bombardment induced hydrogen release increases with the increasing ion fluence. An important effect observed, was the rapid oxidation of samples, which occurs after exposure of bombarded samples to air. These effects resulted in important modifications of the surface properties of bombarded material such as change of friction coefficient, hardness and improved wettability.

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Dudnikov, Vadim, and Andrei Dudnikov. "Highly Efficient Small Anode Ion Source." Plasma 4, no. 2 (March 25, 2021): 214–21. http://dx.doi.org/10.3390/plasma4020013.

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We describe some modifications to a Bernas-type ion source that improve the ion beam production efficiency and source operating lifetime. The ionization efficiency of a Bernas type ion source has been improved by using a small anode that is a thin rod, oriented along the magnetic field. The transverse electric field of the small anode causes the plasma to drift in the crossed ExB field to the emission slit. The cathode material recycling was optimized to increase the operating lifetime, and the wall potential optimized to suppress deposition of material and subsequent flake formation. A three-electrode extraction system was optimized for low energy ion beam production and efficient space charge neutralization. An ion beam with emission current density up to 60 mA/cm2 has been extracted from the modified source running on BF3 gas. Space charge neutralization of positive ion beams was improved by injecting electronegative gases.

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Feng, Y. C., and S. P. Wong. "Low energy solid intense ion beams extracted by electron beam evaporation ion source for material modifications." Review of Scientific Instruments 69, no. 7 (July 1998): 2644–46. http://dx.doi.org/10.1063/1.1148992.

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Hirayama, Y. "GaAs/AlGaAs material modifications induced by focused Ga ion beam implantation." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 6, no. 3 (May 1988): 1018. http://dx.doi.org/10.1116/1.584339.

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7

Shen, Z. G., C. H. Lee, C. Wu, D. Y. Jiang, and S. Z. Yang. "Material surface modification by pulsed ion beam." Journal of Materials Science 25, no. 7 (July 1990): 3139–41. http://dx.doi.org/10.1007/bf00587663.

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8

Remnev, G. E., V. A. Tarbokov, and S. K. Pavlov. "Material modification by high-intense pulsed ion beams." Physics and Chemistry of Materials Treatment 2 (2021): 5–26. http://dx.doi.org/10.30791/0015-3214-2021-2-5-26.

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The review is devoted to the use of powerful submicrosecond ion beams for the synthesis and modification of material properties. Powerful ion beams, originally developed for the problems of inertial thermonuclear fusion, have been increasingly used over the past 30 years as a powerful pulsed heating source providing ample opportunities for modifying the surface layer of materials. By varying the key parameters of the beams, such as the composition (type of ions), the duration of the accelerating pulse (10 ns – 1 μs), the kinetic energy of the ions (0.1 – 1 MeV), the energy density transmitted by the beam to the target surface per pulse (0.1 – 50 J/cm2), the main areas of application of high-power ion beams in materials science were determined: modification of the surface layer by ultrafast quenching, melting and ultrafast recrystallization with the formation of micro- and nanostructures, pulsed implantation of ions accompanied by energetic action, deposition of thin films and synthesis of nanosized powders from ablative plasma.

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Bacri, C. O., C. Bachelet, C. Baumier, J. Bourçois, L. Delbecq, D. Ledu, N. Pauwels, S. Picard, S. Renouf, and C. Tanguy. "SCALP, a platform dedicated to material modifications and characterization under ion beam." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 406 (September 2017): 48–52. http://dx.doi.org/10.1016/j.nimb.2017.03.036.

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Iqbal, Muhammad, J. I. Akhter, A. Qayyum, Y. Javed, M. Rafiq, and A. A. Khuram. "Surface Modification and Characterization of Bulk Amorphous Materials." Key Engineering Materials 510-511 (May 2012): 43–50. http://dx.doi.org/10.4028/www.scientific.net/kem.510-511.43.

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Bulk metallic glasses (BMGs) are well known for their promising properties. Surface properties can be further improved by using certain techniques such as electron beam melting (EBM), laser beam melting (LBM), ion irradiation, ion implantation and neutron irradiation. BMGs especially Zr-based BMGs have numerous applications as structural materials. In this manuscript, the results are presented on microstructural investigations and phase formations in Zr-based BMGs modified by using above mentioned techniques. Microstructure was studied by scanning electron microscopy (SEM). Phase analysis was done by X-ray diffraction (XRD) and confirmed by energy dispersive spectroscopy (EDS). Vickers hardness was measured and correlated with the microstructure. The phases identified in Zr-Cu-Al-Ni alloy samples modified by EBM, LBM and ion irradiation are Ni-Zr, NiZr2, CuZr2, Cu10Zr7 and Al2NiZr6. ZrSi2 phase was detected in Zr55Cu30Al10Ni5 and Zr65Cu17Ni10Al8 BMGs irradiated with Si+ (ions). About 20-35 % increase in hardness and elastic moduli was achieved by surface modification. Modifications of BMGs by electron and laser beams melted the materials surfaces while ion irradiation improved the mechanical properties of localized zones without melting.

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Dissertations / Theses on the topic "Material modifications by ion beam"

1

Prosvetov, Alexey [Verfasser], Christina [Akademischer Betreuer] Trautmann, and Wolfgang [Akademischer Betreuer] Ensinger. "Ion-beam induced modifications of structural and thermophysical properties of graphite materials. / Alexey Prosvetov ; Christina Trautmann, Wolfgang Ensinger." Darmstadt : Universitäts- und Landesbibliothek Darmstadt, 2020. http://d-nb.info/1216627541/34.

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Sekula, Filip. "Technické úpravy a aplikace zařízení pro ozařování MeV ionty při tandemovém urychlovači v Uppsale." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443884.

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V této práci je představeno zařízení pro ozařování MeV ionty při tandemovém urychlovači na univerzitě v Uppsale. Jsou podány základy teorie interakce iontů s pevnou látkou a modifikace materiálu pomocí iontů s vysokou energií. Zařízení tandemového urychlovače je popsáno počínaje generací iontů a konče dopadem iontů na vzorek v hlavní komoře zařízení pro iontové ozařování. Následně jsou detailně charakterizovány modifikace systému pro přesun vzorků a popsán princip jeho funkce. Pilotní aplikace upraveného systému v oblasti materiálových modifikací je prezentována na příkladu ozařování Ge kvantových teček. Homogenita rozložení iontů na vzorku při ozařování je testována pomocí simulace elektrostatického deflektoru.

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Delgado, Adriana de Oliveira. "Processos de modificação molecular em polímeros irradiados com feixe de íons." Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-29032012-092529/.

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Diante da crescente necessidade de materiais com melhores propriedades para aplicações nos diversos campos da ciência e da tecnologia, a irradiação com feixes iônicos mostra-se como uma importante ferramenta de modicação de materiais. A irradiação de polímeros, em especial, fornece sempre novas perspectivas de aplicabilidade para esses materiais. Diante disso, o presente trabalho tem como objetivo estudar quais são e como ocorrem os processos de modicação de polímeros irradiados com feixes de íons de alta energia. Para essa investigação, amostras de politetrauoroetileno (PTFE) e poli éter éter cetona (PEEK) foram irradiadas no acelerador Unilac do GSI Helmholtzzentrum für Schwerionenforschung GmbH, em Darmstadt, Alemanha, com feixes de íons C, Xe, Au e U, de energia entre 3,6 e 11,4 MeV/u. As amostras foram submetidas à irradiação sob temperatura ambiente e temperatura criogênica (20-40 K). A análise das amostras irradiadas foi realizada através das seguintes técnicas: análise de gases residuais (RGA), espectroscopia de absorção UV-Vis, espectroscopia de absorção no infravermelho com transformada de fourier (FTIR) e difração de raios X (XRD). Observou-se que durante a irradiação do PTFE, os principais processos de modicação são as quebras moleculares e a formação do radical CF3 como grupo terminal e lateral. Além desses, também ocorrem processos de entrelaçamento e formação de estruturas insaturadas, com ligações duplas internas e terminais. Os principais fragmentos voláteis são o CF e o CF3. Durante a irradiação do PEEK observou-se liberação de gás hidrogênio em grande quantidade, como consequência da quebra dos anéis aromáticos do polímero. Algumas reações de recombinação deram origem a formação dos grupos alcino, éster, uorenona e álcool. Além disso o processo de carbonização da amostra foi responsável pelo aumento da condutividade do material. Durante a irradiação sob temperatura criogênica, alguns processos de recombinação nos materiais foram dicultados e grande parte dos elementos voláteis gerados permaneceu congelada no interior do polímero, sendo liberada durante posterior aquecimento até temperatura ambiente. Alguns modelos propostos para explicar efeitos de degradação térmica ou após irradiação com feixe de elétrons foram estendidos com sucesso aos resultados da irradiação com íons pesados e de alta energia.
Nowadays the demand for materials with improved properties for application in different elds of science and technology is constant. Ion beam irradiation is a usual and important tool of modication of materials and polymer irradiation, in particular, has given new perspectives of use for these modied materials. Hence, the aim of this work is the identication of the processes of modication of polymers irradiated with high energy ion beams and how they occur. In this investigation, samples of polytetrauorethylene (PTFE) and poly-ether etherketone (PEEK) were irradiated at the Unilac accelerator at GSI Helmholtzzentrum for Schwerionenforschung GmbH, at Darmstadt, Germany, with C, Xe, Au and U beams with energy between 3.6 and 11.4 MeV/u. The samples were irradiated at room and cryogenic (20-40 K) temperature. The sample analyses were performed through: Residual Gas Analysis (RGA), UV-Vis Absorption Spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), and X Ray Diraction (XRD). Under irradiation, the main processes of modication of PTFE were the chain scissioning and the formation of CF3 terminal and side group. Besides that, cross-linking and new unsaturated structures were also observed, evidenced by the formation of terminal and internal double bonds. CF3 and CF were the main degassed fragments that were observed. During irradiation of PEEK, a great amount of hydrogen gas was liberated as a consequence of the scission in the aromatics rings. Some rearrangement reactions occurred and gave rise to formation of the following groups: alkyne, esther, uorenon and alcohol. Moreover, the process of carbonization in the sample caused an increase in the polymer conductivity. When irradiated under cryo-temperature some recombination processes became more dicult and most of the volatile fragments remained frozen in the polymers. Some degradation models proposed to explain damage effects after thermal and electron beam exposure were sucessfully extended to the obtained results in the case of irradiation with swift heavy ions.

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Roshchupkina, Olga. "Ion beam induced structural modifications in nano-crystalline permalloy thin films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-114158.

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In the last years, there is a rise of interest in investigation and fabrication of nanometer sized magnetic structures due to their various applications (e.g. for data storage or micro sensors). Over the last several decades ion beam implantation became an important tool for the modification of materials and in particular for the manipulation of magnetic properties. Nanopatterning and implantation can be done simultaneously using focused-ion beam (FIB) techniques. FIB implantation and standard ion implantation differ in their beam current densities by 7 orders of magnitude. This difference can strongly influence the structural and magnetic properties, e.g. due to a rise of the local temperature in the sample during ion implantation. In previous investigations both types of implantation techniques were studied separately. The aim of the current research was to compare both implantation techniques in terms of structural changes and changes in magnetic properties using the same material system. Moreover, to separate any possible annealing effects from implantation ones, the influence of temperature on the structural and magnetic properties were additionally investigated. For the current study a model material system which is widely used for industrial applications was chosen: a 50 nm thick non-ordered nano-crystalline permalloy (Ni81Fe19) film grown on a SiO2 buffer layer based onto a (100)-oriented Si substrate. The permalloy films were implanted with a 30 keV Ga+ ion beam; and also a series of as-deposited permalloy films were annealed in an ultra-high vacuum (UHV) chamber. Several investigation techniques were applied to study the film structure and composition, and were mostly based on non-destructive X-ray investigation techniques, which are the primary focus of this work. Besides X-ray diffraction (XRD), providing the long-range order crystal structural information, extended X-ray absorption fine structure (EXAFS) measurements to probe the local structure were performed. Moreover, the film thickness, surface roughness, and interface roughness were obtained from the X-ray reflectivity (XRR) measurements. Additionally cross-sectional transmission electron microscope (XTEM) imaging was used for local structural characterizations. The Ga depth distribution of the samples implanted with a standard ion implanter was measured by the use of Auger electron spectroscopy (AES) and Rutherford backscattering (RBS), and was compared with theoretical TRIDYN calculation. The magnetic properties were characterized via polar magneto-optic Kerr effect (MOKE) measurements at room temperature. It was shown that both implantation techniques lead to a further material crystallization of the partially amorphous permalloy material (i.e. to an increase of the amount of the crystalline material), to a crystallite growth and to a material texturing towards the (111) direction. For low ion fluences a strong increase of the amount of the crystalline material was observed, while for high ion fluences this rise is much weaker. At low ion fluences XTEM images show small isolated crystallites, while for high ones the crystallites start to grow through the entire film. The EXAFS analysis shows that both Ni and Ga atom surroundings have a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter for both implantation techniques increases with increasing ion fluence according to the same linear law. The lattice parameters obtained from the EXAFS measurements for both implantation types are in a good agreement with the results obtained from the XRD measurements. Grazing incidence XRD (GIXRD) measurements of the samples implanted with a standard ion implanter show an increasing value of microstrain with increasing ion fluence (i.e. the lattice parameter variation is increasing with fluence). Both types of implantation result in an increase of the surface and the interface roughness and demonstrate a decrease of the saturation polarization with increasing ion fluence. From the obtained results it follows that FIB and standard ion implantation influence structure and magnetic properties in a similar way: both lead to a material crystallization, crystallite growth, texturing and decrease of the saturation polarization with increasing ion fluence. A further crystallization of the highly defective nano-crystalline material can be simply understood as a result of exchange processes induced by the energy transferred to the system during the ion implantation. The decrease of the saturation polarization of the implanted samples is mainly attributed to the simple presence of the Ga atoms on the lattice sites of the permalloy film itself. For the annealed samples more complex results were found. The corresponding results can be separated into two temperature regimes: into low (≤400°C) and high (>400°C) temperatures. Similar to the implanted samples, annealing results in a material crystallization with large crystallites growing through the entire film and in a material texturing towards the (111) direction. The EXAFS analysis shows a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter of the annealed samples slightly decreases at low annealing temperatures, reaches its minimum at about ~400°C and slightly rises at higher ones. From the GIXRD measurements it can be observed that the permalloy material at temperatures above >400°C reaches its strain-free state. On the other hand, the film roughness increases with increasing annealing temperature and a de-wetting of the film is observed at high annealing temperatures. Regardless of the material crystallization and texturing, the samples annealed at low temperatures demonstrate no change in saturation polarization, while at high temperatures a rise by approximately ~15% at 800°C was observed. The rise of the saturation polarization at high annealing temperatures is attributed to the de-wetting effect.

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Luttrell, Timothy. "Photocatalysis and Grazing-Ion Beam Surface Modifications of Planar TiO2 Model Systems." Scholar Commons, 2014. https://scholarcommons.usf.edu/etd/5064.

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This dissertation is related to the understanding of catalytic reactions of metal oxides. For several decades, the surfaces and bulk of materials have been probed to determine additional properties that relate to photocatalytic applications. This investigation furthers these efforts by the (a) modification of a metal oxide surface to isolate known influences of chemical properties and (b) proposing and utilizing a novel methodology for attribution of photocatalytic activity to a discernable influence. For the first effort, by effectively utilizing a known technique for a new application on a metal oxide, such isolations can be made despite unfavorable states. For the second effort, a reduction in the influence of surface states for metal oxides is effectively performed, providing the isolation of influences originating from the bulk. The challenge with such a proposal is verifying such bulk states have been adequately isolated as external influences would obviously distort any conclusions. Thus, techniques to both create such bulk states and eliminate unwanted combinations thereof are additionally required and must be provided for. Lastly, a determination of the photocatalytic activity is made to these states and results are provided.

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Hafermann, Martin [Verfasser], Carsten [Gutachter] Ronning, Thomas [Gutachter] Taubner, and Thomas [Gutachter] Zentgraf. "Ion beam modification of phase-change materials for optical applications / Martin Hafermann ; Gutachter: Carsten Ronning, Thomas Taubner, Thomas Zentgraf." Jena : Friedrich-Schiller-Universität Jena, 2021. http://d-nb.info/1233353144/34.

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Strobel, Matthias. "Modeling and computer simulation of ion beam synthesis of nanostructures." Doctoral thesis, [S.l.] : [s.n.], 1999. http://deposit.ddb.de/cgi-bin/dokserv?idn=963546481.

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Illing, Cyprian A. W. "Chemical Mechanisms and Microstructural Modification of Alloy Surface Activation for Low-Temperature Carburization." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1521753968828438.

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Orso, Steffen. "Structural and mechanical investigations of biological materials using a Focussed Ion Beam microscope." [S.l. : s.n.], 2005. http://nbn-resolving.de/urn:nbn:de:bsz:93-opus-27175.

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Mogonye, Jon-Erik. "Stable Nanocrystalline Au Film Structures for Sliding Electrical Contacts." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849672/.

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Hard gold thin films and coatings are widely used in electronics as an effective material to reduce the friction and wear of relatively less expensive electrically conductive materials while simultaneously seeking to provide oxidation resistance and stable sliding electrical contact resistance (ECR). The main focus of this dissertation was to synthesize nanocrystalline Au films with grain structures capable of remaining stable during thermal exposure and under sliding electrical contact stress and the passing of electrical current. Here we have utilized a physical vapor deposition (PVD) technique, electron beam evaporation, to synthesize Au films modified by ion implantation and codeposited ZnO hardened Au nanocomposites. Simultaneous friction and ECR experiments of low fluence (< 1x10^17 cm^-2) He and Ar ion implanted Au films showed reduction in friction coefficients from ~1.5 to ~0.5 and specific wear rates from ~4x10^-3 to ~6x10^-5 mm^3/N·m versus as-deposited Au films without significant change in sliding ECR (~16 mΩ). Subsurface microstructural changes of He implanted films due to tribological stress were analyzed via site-specific cross-sectional transmission electron microscopy (TEM) and revealed the formation of nanocrystalline grains for low energy (22.5 keV) implantation conditions as well as the growth and redistribution of cavities. Nanoindentation hardness results revealed an increase from 0.84 GPa for as-deposited Au to ~1.77 GPa for Au uniformly implanted with 1 at% He. These strength increases are correlated with an Orowan hardening mechanism that increases proportionally to (He concentration)1/3. Au-ZnO nanocomposite films in the oxide dilute regime (< 5 vol% ZnO) were investigated for low temperature aging stability in friction and ECR. Annealing at 250 °C for 24 hours Au-(2 vol%)ZnO retained a friction coefficient comparable to commercial Ni hardened Au of ~ 0.3 and sliding ECR values of ~35 mΩ. Nanoindentation hardness increases of these films (~2.6 GPa for 5 vol% ZnO) are correlated to microstructure via high resolution TEM and scanning electron microscope cross-sections to both Hall-Petch and Orowan strengthening mechanisms. Also presented is a correlation between electrical resistivity and grain size in the oxide dilute range based on the Mayadas-Shatzkes (M-S) electron scattering model. Using the M-S model in combination with a model describing solute drag stabilized grain growth kinetics we present a new technique to probe grain boundary mobility and thermal stability from in-situ electrical resistivity measurements during annealing experiments.

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Books on the topic "Material modifications by ion beam"

1

Kelly, Roger. Materials Modification by High-fluence Ion Beams. Dordrecht: Springer Netherlands, 1988.

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NATO Advanced Study Institute on Materials Modification by High-fluence Ion Beams (1987 Viana do Castelo, Portugal). Materials modification by high-fluence ion beams. Dordrecht, The Netherlands: Kluwer Academic Publishers, 1989.

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Kelly, Roger, and M. Fernanda Silva, eds. Materials Modification by High-fluence Ion Beams. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-1267-0.

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International Conference on Ion Beam Modification of Materials (5th 1986 Catania). Ion beam modification of materials: Proceedings ofthe fifth International Conference on Ion Beam Modification of Materials, Catania, Italy,9-13 june 1986. Edited by Campisano S. U. Amsterdam: North Holland, 1987.

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International Conference on Ion Beam Modification of Materials (8th 1992 Heidelberg, Germany). Ion beam modification of materials: Proceedings of the Eighth International Conference on Ion Beam Modification of Materials, Heidelberg, Germany, 7-11 September 1992. Edited by Kalbitzer S, Meyer Otto, and Wolf G. K. Amsterdam: North-Holland, 1993.

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International Conference on Ion Beam Modification of Materials (9th 1995 Canberra, A.C.T.). Ion beam modification of materials: Proceedings of the ninth International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 February, 1995. Edited by Williams James S. 1948-, Elliman R. G, and Ridgway M. C. Amsterdam: Elsevier Science, 1996.

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International Conference on Ion Beam Modification of Materials (7th 1990 Knoxville, Tenn.). Ion beam modification of materials: Proceedings of the Seventh International Conference on Ion Beam Modification of Materials, Knoxville, TN, USA, 9-14 September 1990. Edited by Withrow S. P and Poker D. B. Amsterdam, The Netherlands: North-Holland, 1991.

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Szycher, M. Biomaterials for the 1990s: Polyurethanes, silicones and ion beam modification techniques. Torrance, Calif: K & M Co., 1990.

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S, Khokle W., ed. Patterning of material layers in submicron region. New York: J. Wiley, 1993.

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Symposium C on Ion Beam, Plasma, Laser, and Thermally-Stimulated Deposition Processes (1993 Strasbourg, France). Stimulated deposition processes and materials aspects of ion beam synthesis: Proceedings of Symposium C on Ion Beam, Plasma, Laser, and Thermally-Stimulated Deposition Processes and Symposium G on Materials Aspects of Ion Beam Synthesis: Phase Formation and Modification of the 1993 E-MRS Spring Conference, Strasbourg, France, May 4-7, 1993. Amsterdam: North-Holland, 1994.

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Book chapters on the topic "Material modifications by ion beam"

1

Roccaforte, Fabrizio, Filippo Giannazzo, Corrado Bongiorno, Sebania Libertino, Francesco La Via, and Vito Raineri. "Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC." In Materials Science Forum, 729–32. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.729.

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Kholmetskii, A. L., V. V. Uglov, V. V. Khodasevich, J. A. Fedotova, V. M. Anischik, V. V. Ponaryadov, D. P. Rusalskii, and A. K. Kuleshov. "Modification of Steel Surfaces Following Plasma and Ion Beam Implantation Investigated by Means of Cems." In Material Research in Atomic Scale by Mössbauer Spectroscopy, 59–68. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0151-9_7.

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Iwaki, Masaya. "Ion Beam Modification of Carbon Materials." In Solid State Phenomena, 107–10. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/3-908451-12-4.107.

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Yamada, I., J. Matsuo, Z. Insepov, and M. Akizuki. "Surface modifications by gas cluster ion beams." In Ion Beam Modification of Materials, 165–69. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50035-6.

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Lipp, S., L. Frey, G. Franz, E. Demm, S. Petersen, and H. Ryssel. "Local material removal by focused ion beam milling and etching." In Ion Beam Modification of Materials, 630–35. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50117-9.

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Tolopa, Alexander M., and Pan Tamek. "Application of TAMEK vacuum arc ion source for material modification." In Ion Beam Modification of Materials, 1102–5. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50224-0.

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Boutard, D., and B. Berthier. "Irradiation-induced modifications in metal-silicon interfaces under MeV focused helium beam." In Ion Beam Modification of Materials, 1106–9. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50225-2.

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Sasase, M., T. Yamaki, K. Miyake, I. Takano, and S. Isobe. "Formation of TiO2 Films as a Photocatalytic Material by Ion Beam Assisted Reactive Deposition Method – TDS Study of Ar Atom Incorporation in the TiO2 Films." In Ion Beam Modification of Materials, 728–31. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50137-4.

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Yasui, Toshiaki, Miki Hiramatsu, Hirokazu Tahara, Ken-ichi Onoe, Yasuji Tsubakishita, and Takao Yoshikawa. "DEVELOPMENT OF A REENTRANT-CAVITY-TYPE ELECTRON CYCLOTRON RESONANCE (ECR) ION SOURCE AND ITS APPLICATIONS FOR MATERIAL PROCESSING." In Laser and Ion Beam Modification of Materials, 89–91. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81994-9.50025-7.

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Zhang, Zhigang, and Takashi Yagi. "KrF laser source with variable pulse width for material processing." In Laser and Ion Beam Modification of Materials, 301–4. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81994-9.50067-1.

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Conference papers on the topic "Material modifications by ion beam"

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Voitsekhovskii, Aleksander V., Andrej P. Kokhanenko, Yu A. Denisov, D. A. Oucherenko, Gennady E. Remnev, and Mikhail S. Opekunov. "High-power pulse-electron beam modification and ion implantation of Hg1-xCdxTe epitaxial structures." In Material Science and Material Properties for Infrared Optoelectronics, edited by Fiodor F. Sizov and Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280460.

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Bender, H. J., and R. A. Donaton. "Focused Ion Beam Analysis of Low-K Dielectrics." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0397.

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Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

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Ray, Valery, Ali Hadjikhani, Joseph Favata, Seyedeh Ahmadi, and Sina Shahbazmohamadi. "Further Inquiry into Xe Primary Ion Species for Circuit Edit Application." In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0251.

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Abstract Widespread adoption and significant developments in Focused Ion Beam technology has made FIB/SEM instrumentation a commonplace sample preparation tool. Fundamental limitations inherent to Ga ion species complicate usage of Ga+ FIB instruments for the modification of semiconductor devices on advanced technology nodes. Said limitations are fueling interest in exploring alternative primary species and ion beam technologies for circuit edit applications. Exploratory tests of etching typical semiconductor materials with Xe ion beams generated from two plasma ion sources confirmed advantages of Xe+ as a potential ion species for gas-assisted etching of semiconductor materials, but also revealed potential complications including, swelling of metal and Xe+ retention within the material arising from excessive Xe ion beam current density.

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Herschbein, Steven B., Kyle M. Winter, Carmelo F. Scrudato, Brian L. Yates, Edward S. Hermann, and John Carulli. "FinFET Transistor Output Drive Performance Modification by Focused Ion Beam (FIB) Chip Circuit Editing." In ISTFA 2020. ASM International, 2020. http://dx.doi.org/10.31399/asm.cp.istfa2020p0122.

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Abstract Focused Ion Beam (FIB) chip circuit editing is a well-established highly specialized laboratory technique for making direct changes to the functionality of integrated circuits. A precisely tuned and placed ion beam in conjunction with process gases selectively uncovers internal circuitry, create functional changes in devices or the copper wiring pattern, and reseals the chip surface. When executed within reasonable limits, the revised circuit logic functions essentially the same as if the changes were instead made to the photomasks used to fabricate the chip. The results of the intended revision, however, can be obtained weeks or months earlier than by a full fabrication run. Evaluating proposed changes through FIB modification rather than proceeding immediately to mask changes has become an integral part of the process for bringing advanced designs to market at many companies. The end product of the FIB process is the very essence of handcrafted prototyping. The efficacy of the FIB technique faces new challenges with every generation of fabrication process node advancement. Ever shrinking geometries and new material sets have always been a given as transistor size decreases and overall packing density increases. The biggest fundamental change in recent years was the introduction of the FinFET as a replacement for the venerable planar transistor. Point to point wiring change methodology has generally followed process scaling, but transistor deletions or modifications with the change to Fins require a somewhat different approach and much more careful control due to the drastic change in height and shape. We also had to take into consideration the importance of the 4th terminal, the body-tie, that is often lost in backside editing. Some designs and FET technology can function acceptably well when individual devices are no longer connected to the bulk substrate or well, while others can suffer from profound shifts in performance. All this presents a challenge given that the primary beam technology improvements of the fully configured chip edit FIB has only evolved incrementally during the same time period. The gallium column system appears to be reaching its maximum potential. Further, as gallium is a p-type metal dopant, there are limitations to its use in close proximity to certain active semiconductor devices. Amorphous material formation and other damage mechanisms that extend beyond what can be seen visually when endpointing must also be taken into account [1]. Device switching performance and even transmission line characteristics of nearby wiring levels can be impacted by material structural changes from implantation cascades. Last year our lab participated in a design validation exercise in which we were asked to modify the drive of a multi-finger FinFET device structure to reduce its switching speed impact on a circuit. The original sized device pulled the next node in the chain too fast, resulting in a timing upset. Deleting whole structures and bridging over/around them is commonly done, but modifications to the physical size of an FET device is a rare request and generally not attempted. It requires a level of precision in beam control and post-edit treatment that can be difficult to execute cleanly. Once again during a complex edit task we considered the use of an alternate ion beam species such as neon, or reducing the beam energy (low kV) on the gallium tool. Unfortunately, we don’t yet have easy access to a versatile viable replacement column technology grafted to a fully configured edit station. And while there should be significantly reduced implant damage and transistor functional change when a gallium column FIB is operated at lower accelerating potential [2], the further loss of visual acuity due to the reduced secondary emission, especially when combined with ultra-low beam currents, made fast and accurate navigation near impossible. We instead chose the somewhat unconventional approach of using an ultra-low voltage electron beam to do much of the navigation and surface marking prior to making the final edits with the gallium ion beam in a dual-beam FIB tool. Once we had resolved how to accurately navigate to the transistors in question and expose half of the structure without disturbing the body-tie, we were able to execute the required cut to trim away 50% of the structure and reduce the effective drive. Several of the FIB modified units functioned per the design parameters of a smaller sized device, giving confidence to proceed with the revised mask set. To our surprise, the gallium beam performed commendably well in this most difficult task. While we still believe that an inert beam of similar characteristics would be preferable, this work indicates that gallium columns are still viable at the 14 nm FinFET node for even the most rigorous of editing requirements. It also showed that careful application of e-beam imaging on the exposed underside of FinFET devices could be performed without degrading or destroying them.

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Lee, R., and M. Cecere. "The Usage of Focused Ion Beam Induced Deposition of Gold Film in IC Device Modification and Repair." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0121.

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Abstract Focused Ion Beam (FIB) surgery techniques need to develop to match the new challenges. One area for performance enhancement is in the deposition of lower resistivity conducting materials. At the present time, the two most commonly used materials for conductive deposition are Platinum and Tungsten. The main issue concerning these two materials is the relatively high resistivity of the deposited material; the deposited film can have 100 to 200 times the resistivity of the pure material. FIB-induced deposition of gold films have been commonly used in the repair of masks. In this application the resistivity of the deposited sample is of little importance. An examination of C7H10AuF3O2 (t-fac) as a precursor gas shows that its resistivity when deposited with a FIB is 4-5 times lower than that of Platinum or Tungsten. The deposition rate is also significantly quicker. No electric-migration and dendrite formation was noticed after the Gold deposition was subjected to continuous current flow. However, the thermal stability of the pre-cursor gas is low and will need further refmement. (1,2,6)

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Ray, Valery. "High Aspect Ratio via Milling Endpoint Phenomena in Focused Ion Beam Modification of Integrated Circuits." In ISTFA 2004. ASM International, 2004. http://dx.doi.org/10.31399/asm.cp.istfa2004p0658.

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Abstract Precision detection of endpoint after the milling has reached targeted conductor during circuit modification by focused ion beam system is important. While the sensitivity of the endpoint detection can be enhanced by improved secondary electron collection and sample absorbed current monitoring, a detailed understanding of the endpoint signal distribution within a high aspect ratio (HAR) via is of great interest. This article presents an alternative model of HAR via milling endpointing mechanism in which a phenomenon of spatial distribution of the endpoint information within the HAR via is explained based on sputtering of the material from the targeted metal line and redeposition of the spattered material on the via sidewalls. Increased emission of the secondary electrons, resulting from the subsequent bombardment of this conductive re-deposition by the primary ion beam, is detected as the endpoint. A methodology for the future experimental verification of the proposed model is also described.

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Ray, Valery, Nicholas Antoniou, Alex Krechmer, and Andrew Saxonis. "Improvements of Secondary Electron Imaging and Endpoint Detection in Focused Ion Beam Circuit Modification." In ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0338.

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Abstract Secondary electron signal is widely used in Focused Ion Beam (FIB) systems for imaging and endpointing. In the application of integrated circuit modification, technology has progressed towards smaller dimensions and higher aspect ratios. Therefore, FIB based circuit modification processes require the use of primary ion beam currents below 10 pA and Gas Assisted Etching (GAE). At low beam currents, short pixel dwell times and high aspect ratios, the level of available secondary electrons for detection has declined significantly. FIB GAE and deposition requires delivery and release of a gaseous agent near the beam scanning area, and involves insertion of a gas delivery nozzle made of conductive material and grounded for charge prevention purposes. The proximity of a grounded gas delivery nozzle to the area being milled and/or imaged creates a “shielding” effect, further lowering secondary electron signal level. The application of a small positive bias to the gas delivery nozzle provides an effective way of reducing the “shielding” effect. Depending on the geometrical arrangement of the gas delivery system and other conductive objects in the chamber, an optimized nozzle bias potential can create conditions favorable for enhanced extraction and collection of secondary electrons. The level of the secondary electron image signal, collected in an FEI Vectra 986+ system, from a grounded copper sample with the nozzle extended and biased can be enhanced as much as six times as compared to the grounded nozzle. Secondary electron intensity endpoint is improved on backside samples, however shielding of the nozzle field by the bulk silicon substrate limits the electron extraction effect from within a via. For front side edits the improvement of endpoint signal level can be dramatic. Lateral image offset induced by the electrostatic field of a biased nozzle, can be removed by software position compensation.

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Mulholland, Matthew M., Ahmed A. Helmy, and Anthony V. Dao. "Pulse Laser Ablation Techniques for IC Package Substrate Modifications and Validation." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0204.

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Abstract Post silicon validation techniques specifically Focused Ion Beam (FIB) circuit editing and Failure Analysis (FA) require sample preparation on Integrated Circuits (IC). Although these preparation techniques are typically done globally across the encapsulated and silicon packaging materials, in some scenarios with tight mechanical or thermal boundary conditions, only a local approach can be attempted for the analysis. This local approach to access the underlying features, such as circuits, solder bumps, and electrical traces can be divided into two modification approaches. The back side approach is typically done for die level analysis by de-processing through encapsulated mold compound and silicon gaining access to the silicon transistor level. On the other hand, the front side approach is typically used for package level analysis by de-processing the ball grid array (BGA) and package substrate layers. Both of these local de-processing approaches can be done by using the conventional Laser Chemical Etching (LCE) platforms. The focus of this paper will be to investigate a front side modification approach to provide substrate material removal solutions. Process details and techniques will be discussed to gain access to metal signals for further failure analysis and debug. A pulse laser will be used at various processing stages to de-process IC package substrate materials.

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Bethke, D. "IC Design Modification Using Laser Assisted Organometal Deposition." In ISTFA 1997. ASM International, 1997. http://dx.doi.org/10.31399/asm.cp.istfa1997p0231.

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Abstract This paper explains how laser assisted deposition used in combination with focused ion beam (FIB) milling reduces turnaround time for complex circuit modifications. It presents the results of three case studies, characterizing the process and the effect of various processing parameters. The first case involves the creation of a low resistance path between internal signal lines using only laser techniques; the second case demonstrates the use of laser deposition to route interconnects, millimeters in length, between two complex FIB modifications; and the third case is designed to reproduce a charge build-up problem. The paper also discusses the use of gold as a deposition material.

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"Material modifications." In 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6939965.

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Reports on the topic "Material modifications by ion beam"

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Bystritskii, V. Modification of Material Surface Using Plasma-Enhanced Ion Beams. Fort Belvoir, VA: Defense Technical Information Center, June 1998. http://dx.doi.org/10.21236/ada347696.

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RENK, TIMOTHY J., PAULA P. PROVENCIO, PAUL G. CLEM, SOMURI V. PRASAD, and M. O. THOMPSON. Use of Intense Ion Beams for Surface Modification and Creation of New Materials. Office of Scientific and Technical Information (OSTI), December 2002. http://dx.doi.org/10.2172/808612.

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More, R. M., J. J. Barnard, F. M. Bieniosek, E. Henestroza, S. M. Lidia, and P. A. Ni. HEAVY ION FUSION SCIENCE VIRTUAL NATIONAL LABORATORY2nd QUARTER 2010 MILESTONE REPORTDevelop the theory connecting pyrometer and streak camera spectrometer data to the material properties of beam heatedtargets and compare to the data. Office of Scientific and Technical Information (OSTI), April 2010. http://dx.doi.org/10.2172/983163.

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