Journal articles: 'Magnetron sputtering'

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Kozlova, M. V., V. N. Fateev, O. K. Alekseeva, N. A. Ivanova, V. V. Tishkin, and A. Sh Aliyev. "MAGNETRON SPUTTERING SYNTHESIS OF ELECTROCATALYSTS." Chemical Problems 22, no. 1 (2024): 7–19. http://dx.doi.org/10.32737/2221-8688-2024-1-7-19.

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Magnetron sputtering is a well-known method of obtaining various coatings and surface modifications, but nowadays it is successfully used for the synthesis of electrocatalysts. One of the main advantages of the method is the possibility to vary the parameters during the process, such as the mode (direct current sputtering, pulsed medium-frequency sputtering, high radio frequency sputtering), potential supply to the sputtered substrate or catalyst carrier, pressure in the vacuum chamber, atmosphere composition, which allows to change the composition and structure of the obtained coatings and catalysts very widely. Changing the modes of sputtering makes it possible to create both dense (porous) protective/catalytic coatings and coatings with a very developed surface, i.e. for obtaining electrode materials

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Ruano, Manuel, Lidia Martínez, and Yves Huttel. "Investigation of the Working Parameters of a Single Magnetron of a Multiple Ion Cluster Source: Determination of the Relative Influence of the Parameters on the Size and Density of Nanoparticles." Dataset Papers in Science 2013 (August 18, 2013): 1–8. http://dx.doi.org/10.1155/2013/597023.

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Multiple Ion Cluster Source (MICS) is the new optimized route of a standard technique based on a sputtering gas aggregation source, the Ion Cluster Source. The single magnetron used in the standard Ion Cluster Source is replaced by three magnetrons inside the aggregation zone, and they are controlled individually in order to fabricate nanoparticles with the desired and tunable chemical composition. Apart from the working parameters of each magnetron, it is also reported that the relation between the working parameters of individual magnetrons is of prime importance for the control of both the size and density of the nanoparticles. The influences of fluxes of the sputtering gas applied to each magnetron, the total gas flux in the aggregation zone, the position in the aggregation zone of Ag magnetron, and the relative position of the magnetrons in the aggregation zone have been studied through the operation of one of the magnetrons loaded with a silver target.

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Rossnagel, Stephen M. "Magnetron sputtering." Journal of Vacuum Science & Technology A 38, no. 6 (December 2020): 060805. http://dx.doi.org/10.1116/6.0000594.

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Swann, S. "Magnetron sputtering." Physics in Technology 19, no. 2 (March 1988): 67–75. http://dx.doi.org/10.1088/0305-4624/19/2/304.

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Gaines, J. R. "Combinatorial Magnetron Sputtering." Vakuum in Forschung und Praxis 29, no. 5 (October 2017): 26–30. http://dx.doi.org/10.1002/vipr.201700660.

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Novosyadlyj, S. P., S. I. Boyko, and M. V. Kotyk. "Features Multilevel Metallization Forming a Submicron Structures of Large Integrated Circuits." Фізика і хімія твердого тіла 17, no. 4 (December 15, 2016): 630–36. http://dx.doi.org/10.15330/pcss.17.4.630-636.

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This paper analyzesaluminum alloys that are used to form multilevel metallization in the submicron LSI/VLSI and magnetic alloys that are used for the production of magnetic disks of external storage devices with a large amount of memory. In addition characteristics of magnetron sputtering devices that can be used to form thinmetallization are given: magnetron sputtering device with a magnetic block rotated by cooling deionized water, which can significantly increase the effectiveness of sputtering; high-frequency magnetron device UMV 2,5 with magnetic system that formed on electromagnets with scanning magnetic field; magnetron sputtering device UVN MDE.P-1250-012 which can be used to form double-sided metallization; magnetron sputtering device based on URM.3.279.05 which can be used to form multilayer contact metallization.

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Yokogawa, Yoshiyuki, Taishi Morishima, Mitunori Uno, Masakazu Kurachi, Yutaka Doi, Harumi Kawaki, and Masato Hotta. "Wettability and Durability of Si-O Coatings on Zirconia Substrate by RF-Magnetron Plasma Sputtering." Key Engineering Materials 782 (October 2018): 189–94. http://dx.doi.org/10.4028/www.scientific.net/kem.782.189.

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The wettability and durability of Si-O coatings prepared on zirconia substrate using radiofrequency magnetron sputtering (rf-sputtering) was studied. XRD analysis revealed no phase transformation of zirconia before/after rf-sputtering process. XPS spectroscopy showed that as-deposited films with a SiO2configuration was formed. EDX analysis indicated that the Si/Zr ratio was high and when magnetron rf-sputtering was performed using a plasma gas Ar+5% O2, which may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate. The wear testing using pin on disc wear apparatus was performed. The wettability and durability of Si-O coatings fabricated by magnetron radiofrequency magnetron sputtering (rf-sputtering) on zirconia substrate was studied. A plasma gas Ar+5% O2may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate

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Tranca, Denis E., Arcadie Sobetkii, Radu Hristu, Stefan R. Anton, Eugeniu Vasile, Stefan G. Stanciu, Cosmin K. Banica, Efstathios Fiorentis, David Constantinescu, and George A. Stanciu. "Structural and Mechanical Properties of CrN Thin Films Deposited on Si Substrate by Using Magnetron Techniques." Coatings 13, no. 2 (January 17, 2023): 219. http://dx.doi.org/10.3390/coatings13020219.

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Chromium nitride thin films are known for their good mechanical properties. We present the characteristics of ultrathin chromium nitride films under 400 nm thickness deposited on silicon substrates by direct current and high-power impulse magnetron sputtering techniques. The methods of investigation of the CrN films were scanning electron microscopy, atomic force microscopy, and nanoindentation. Qualitative and quantitative analyses were performed using AFM and SEM images by fractal dimension, surface roughness and gray-level co-occurrence matrix methods. Our results show that using magnetron techniques, ultrathin CrN films with excellent mechanical properties were obtained, characterized by values of Young’s modulus between 140 GPa and 250 GPa for the samples obtained using high-power impulse magneton sputtering (HiPIMS) and between 240 GPa and 370 GPa for the samples obtained using direct current sputtering (DC). Stiffness measurements also reveal the excellent mechanical properties of the investigated samples, where the samples obtained using HiPIMS sputtering had stiffness values between 125 N/m and 132 N/m and the samples obtained using DC sputtering had stiffness values between 110 N/m and 119 N/m.

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Hrubantova, A., R. Hippler, H. Wulff, M. Cada, J. Olejnicek, N. Nepomniashchaia, C. A. Helm, and Z. Hubicka. "Deposition of tungsten oxide films by reactive magnetron sputtering on different substrates." Journal of Vacuum Science & Technology A 40, no. 6 (December 2022): 063402. http://dx.doi.org/10.1116/6.0002012.

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Tungsten oxide films are deposited with the help of reactive magnetron sputtering in an argon/oxygen gas mixture. Films are deposited on different substrates, in particular, on soda lime glass, fluorine-doped tin oxide coated glass, silicon (Si), and quartz ([Formula: see text]). Thin films from three different discharge modes, in particular, high power impulse magnetron sputtering, midfrequency magnetron sputtering, and radiofrequency magnetron sputtering, are compared. Deposited films are characterized by x-ray diffraction, Raman spectroscopy, and spectroscopic ellipsometry. Composition, crystal structure, and optical properties of as-deposited and annealed films are found to depend on the deposition mode and on the substrate.

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Han, Qiu Ling, Wen Yu Ye, Qiao Ling Chen, and Jian Hong Gong. "Study on the Properties of W-Al₂O₃ Solar Energy Selective Absorbing Coating Prepared by Magnetron Sputtering." Advanced Materials Research 893 (February 2014): 819–24. http://dx.doi.org/10.4028/www.scientific.net/amr.893.819.

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In this paper, the W-Al2O3 solar energy selective absorbing coating was prepared by magnetron sputtering. The selective absorption coating layers were obtained by setting different tungsten target sputtering power and sputtering time. The process parameters of magnetron sputtering were presented by comparing the selective absorption coating layers absorptivity and reflectivity.

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Tang, Wu, Xue Hui Wang, Yi Peng Chao, and Ke Wei Xu. "The Relationship between Residual Stress and Resistivity of Au/NiCr/Ta Multi-Layered Metallic Films by Magnetron Sputtering." Advanced Materials Research 150-151 (October 2010): 14–17. http://dx.doi.org/10.4028/www.scientific.net/amr.150-151.14.

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Au/NiCr/Ta multi-layered metallic films were deposited on Al2O3 substrate by magnetron sputtering at different substrate temperature. The effect of substrate temperature on magnetron sputtering Au/NiCr/Ta films in crystal orientation, residual stress and resistivity was investigated. The all magnetron sputtering films were highly textured with dominant Au-(111) orientation or a mixture of Au-(111) and Au-(200) orientation. The residual stress in magnetron sputtering films at different substrate temperature was tensile stress with 155MPa-400MPa. A smallest resistivity of 3.6µΩ.cm was obtained for Au/NiCr/Ta multi-layered metallic films at substrate temperature 180°C. The experiment results reveal that the resistivity increased with the increase of the residual stress of metallic films.

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Saenko, A. V., Z. E. Vakulov, V. S. Klimin, G. E. Bilyk, and S. P. Malyukov. "Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature." Микроэлектроника 52, no. 4 (July 1, 2023): 329–35. http://dx.doi.org/10.31857/s0544126923700394.

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Magnetron sputtering in the medium frequency (MF) mode was used to obtain ITO films on glass substrates at room temperature in an oxygen-free environment. The effect of the magnetron sputtering power on the electrophysical properties and surface morphology of ITO films is studied. It is shown that the ITO film deposition rate depends linearly on the power of magnetron sputtering in the MF mode. It is found that ITO films have a predominantly nanocrystalline structure at a magnetron sputtering power of more than 100 W. Increasing the sputtering power leads to an increase in surface roughness from 13.5 to 24.6 nm and grain size from 11.7 to 27.5 nm in the ITO film. The minimum resistivity of the ITO films is 6.82 × 10–4 Ω cm at the concentration and mobility of charge carriers of 2.48 × 1020 cm–3 and 36.8 cm2/V s, which corresponds to the optimum power of magnetron sputtering of 200 W. The results obtained correspond to a high level of surface resistance values for ITO films (34.1 Ω/□), which can be used to form transparent conducting electrodes in solar cells and memristors, both on glass and flexible substrates.

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Lin, Jing, Jin Long Zhang, and Gui Wen Yu. "Magnetron Sputtering Target Structure Optimization Research Status." Applied Mechanics and Materials 318 (May 2013): 356–59. http://dx.doi.org/10.4028/www.scientific.net/amm.318.356.

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In order to optimize the target surface magnetic field intensity and uniformity for the purpose, this paper introduces the traditional magnetron sputtering target problems, the author summarizes the other researchers on magnetron sputtering target field overall optimization ideas, magnetic field simulation method and different target under the condition of the magnet structure optimization, especially in rectangular target end area optimization are summarized, and the magnetron sputtering target magnetic field pole shoe and permeability piece optimization also made a description.

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Bai, Xiu Qin, and Jian Li. "Study on Low Temperature Deposition of TiN Films and their Tribological Properties." Advanced Materials Research 189-193 (February 2011): 925–30. http://dx.doi.org/10.4028/www.scientific.net/amr.189-193.925.

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The low temperature deposition principle of magnetron sputtering was discussed. Reactive magnetron sputtering technique was used to gain titanium nitride (TiN) thin films on W18Cr4V high-speed steel substrates at low temperature. A series of experiments had been conducted to study the properties of TiN films. The experimental results showed that at the low temperature(<140 °C), magnetic sputtering can be used for the deposition of TiN film with compact, uniform and high nano-hardness, and their tribological properties were excellent, which co-determined by the film structure of low temperature magnetron sputtering and the counter-parts of rubbing pairs.

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Song, Yuan Qiang, Huai Wu Zhang, Ying Li Liu, Yuan Xun Li, and Qi Ye Wen. "Magnetic and Magneto-Optical Properties of Sputtered Co-CeO₂ Thin Films on Al₂O₃ (0001) Substrates with (100) Orientation." Materials Science Forum 687 (June 2011): 117–21. http://dx.doi.org/10.4028/www.scientific.net/msf.687.117.

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Diluted magnetically doped CeO2 films is an attractive dilute magnetic oxide which would facilitate the practical realization of spintronic devices and may also be used to explore novel magneto-optical applications. In this experiments, 3 at% cobalt-doped CeO2 films with the stoichiometry of Ce0.97Co0.03O2-δ (CCO) were deposited by magnetron sputtering methods on Al2O3 (0001) substrates. The structural, magnetic, and magneto-optical properties were investigated. The results indicate that CCO films with CeO2 (100) orientation can readily be obtained via magnetron sputtering on Al2O3 (0001) substrates. Films are ferromagnetic at room temperature, which is anisotropic with an out-of-plane magnetization easy axis. Magneto-optical measurements exhibit a giant Faraday rotation of about 4800 deg/cm at 650 nm wavelength in out-of-plane direction. The excellent room-temperature ferromagnetism and the giant Faraday rotation in CCO films show highly potential applications in novel magneto-optical devices as well as in spintronics.

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Musil, J., A. Rajský, A. J. Bell, J. Matouš, M. Čepera, and J. Zeman. "High‐rate magnetron sputtering." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, no. 4 (July 1996): 2187–91. http://dx.doi.org/10.1116/1.580045.

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Belkind, A., Z. Zhao, and R. Scholl. "Dual-anode magnetron sputtering." Surface and Coatings Technology 163-164 (January 2003): 695–702. http://dx.doi.org/10.1016/s0257-8972(02)00659-x.

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Musil, J. "Low-pressure magnetron sputtering." Vacuum 50, no. 3-4 (July 1998): 363–72. http://dx.doi.org/10.1016/s0042-207x(98)00068-2.

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Yoshida, Yoshikazu. "Microwave‐enhanced magnetron sputtering." Review of Scientific Instruments 63, no. 1 (January 1992): 179–83. http://dx.doi.org/10.1063/1.1142953.

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Glocker, David, Mark Romach, George Scherer, Justin Eichenberger, and John Lanzafame. "Inverted Cylindrical Magnetron Sputtering." Vakuum in Forschung und Praxis 26, no. 4 (August 2014): 18–23. http://dx.doi.org/10.1002/vipr.201400558.

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Zhong, Wei, Sunbin Deng, Kai Wang, Guijun Li, Guoyuan Li, Rongsheng Chen, and Hoi-Sing Kwok. "Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering." Nanomaterials 8, no. 8 (August 3, 2018): 590. http://dx.doi.org/10.3390/nano8080590.

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In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using a two-step method. In the first step, a thin MoS2 film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS2 film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS2 by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS2 are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS2 layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS2 on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.

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Abduev, A., A. Akhmedov, A. Asvarov, V. Kanevsky, A. Muslimov, V. Belyaev, D. Generalov, D. Nikolaeva, J. Tirado, and M. A. A. Frah. "Advanced processes for low-temperature formation of functional metal oxide based thin films." Journal of Physics: Conference Series 2056, no. 1 (October 1, 2021): 012046. http://dx.doi.org/10.1088/1742-6596/2056/1/012046.

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Abstract The analysis the discharge processes in magnetron plasma, target sputtering processes, as well as nucleation and formation of oxide thin films during dc magnetron sputtering is carried out. Particular attention is paid to the phenomenon of instabilities of the current-voltage characteristics of magnetron plasma during the sputtering of oxide targets, the processes of structural transformations of the surface of metal oxide targets under ion bombardment impact, and the mechanisms of low-temperature magnetron deposition of metal oxide thin films. Based on the results of the analysis performed the optimal routes for improving technologies for the low-temperature formation of transparent conductive oxide thin films have been discussed.

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Zheng, Hua Jing, Chi Zhang, and Zheng Ruan. "Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method." Applied Mechanics and Materials 575 (June 2014): 254–63. http://dx.doi.org/10.4028/www.scientific.net/amm.575.254.

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With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.

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Vizir, A. V., A. S. Bugaev, V. P. Frolova, V. I. Gushenets, A. G. Nikolaev, E. M. Oks, and G. Yu Yushkov. "Ion beam composition in ion source based on magnetron sputtering discharge at extremely low working pressure." Review of Scientific Instruments 93, no. 4 (April 1, 2022): 043304. http://dx.doi.org/10.1063/5.0086224.

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In an ion source based on a pulsed planar magnetron sputtering discharge with gas (argon) feed, the fraction of metal ions in the ion beam decreases with decreasing gas pressure, down to the minimum possible working pressure of the magnetron sputtering discharge. The use of a supplementary vacuum arc plasma injector provides stable operation of the pulsed magnetron sputtering discharge at extremely low pressure and without gas feed. Under these conditions, the pressure dependence of the gaseous ion fraction displays a maximum (is nonmonotonic).

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Posadowski, Witold, Artur Wiatrowski, and Grzegorz Kapka. "Effect of pulsed magnetron sputtering process for the deposition of thin layers of nickel and nickel oxide." Materials Science-Poland 36, no. 1 (May 18, 2018): 69–74. http://dx.doi.org/10.1515/msp-2017-0092.

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Abstract Magnetron sputtered nickel and nickel oxide films have been studied for various applications. We may find, among others, these films in electrochromic display devices, in resistive type gas sensors, as metal electrodes in electronic devices, in solar thermal absorbers. Pure nickel films deposited using PVD technique possess good corrosion and wear resistant properties. Magnetron sputtering has several advantages in film deposition (in comparison to other methods) such as relatively low heating temperature of the deposited substrate during sputtering process, high energy of sputtered atoms (about 10 eV) at the substrate, which influences positively the films adhesion. From application point of view, the most valuable feature of these films is the possibility of scaling target dimensions, which makes feasible the deposition on a several square meter surfaces. The improvement of magnetron sputtering devices design may influence positively the optimization of the deposition technology and its efficiency. The thin nickel and nickel oxide films were prepared by pulsed magnetron sputtering using original type WMK magnetron device. Ni (99.9 %) has been used as a sputtering target of 100 mm in diameter and different thicknesses (3 mm, 5 mm, and 6 mm). The distance between the substrate and target was the same in all experiments and equal to 120 mm. Argon and oxygen gases were introduced during the reactive process through needle gas valves at a total pressure of 0.4 Pa. The sputtering power, sputtering pressure and oxygen partial pressure have been used as technological knobs for deposition processes. The helpful tool for controlling the pulsed magnetron sputtering process was the original parameter of supply (so called circulating power). Results from our experiments showed that the deposition of Ni films is possible even from targets of 6 mm thickness. Deposition rate increased proportionally with the sputtering power. The aim of this work is to use the acquired expertise to develop an efficient technology of thin nickel oxide layers for electrochromic systems.

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Zhang, Jin Min, Quan Xie, Vesna Borjanović, Yan Liang, Wu Xian Zeng, Da Peng Fu, Dao Jing Ma, and Yan Wang. "Preparation of the Kondo Insulators FeSi by Magnetron Sputtering." Materials Science Forum 663-665 (November 2010): 1129–32. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.1129.

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The Kondo insulator FeSi was prepared by DC magnetron sputtering and the effects of sputtering parameters on the formation of FeSi were investigated in detail. The formation of monosilicide FeSi was clarified using X-ray diffraction (XRD) and its microstructure was characterized by scanning electron microscopy (SEM). The results indicate that the sputtering gas pressure, the sputtering power and the Ar flux all have significantly effects on formation of FeSi and the crystalline of the film. The sputtering gas pressure has effects on sputtering yields, depositing rate and the energy of sputtering atoms, the sputtering power has effects on the kinetic energy and the diffusion ability of deposing atoms and the gas flux has the effects on the flowing state of Ar gas. The most optimal sputtering parameters for the preparation of the Kondo insulator FeSi by DC magnetron sputtering are given: 1.5 Pa for sputtering Ar pressure, 100 W for sputtering power and 20 SCCM for sputtering Ar flux.

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ZHANG, Q., Q. M. MAO, J. Z. RUAN, Q. J. WANG, X. L. YANG, Z. J. ZHAO, H. L. SEET, and X. P. LI. "GIANT MAGNETO-IMPEDANCE EFFECT OF MAGNETRON SPUTTERED Ni80Fe20/Cu COMPOSITE WIRES." Surface Review and Letters 15, no. 06 (December 2008): 753–56. http://dx.doi.org/10.1142/s0218625x08011019.

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In this work, Ni 80 Fe 20/ Cu composite wires of length 50 mm, consisting a Cu core of diameter 100 μm, coated with a layer of Ni 80 Fe 20, were produced by RF magnetron sputtering. To obtain a uniform coating, the wires were spun during sputtering by a homemade system. The results showed that the spinning speed might affect the maximum MI ratio and the magnetic properties. The MI ratio of the sputtered wires increases with the wire spinning speed in the magnetron sputtering. The film thickness had a significant effect on the magnitude and the optimum frequency of the giant magneto-impedance effect. The maximum MI ratio can reach about 247.4% for the specimen with a Ni 80 Fe 20 coating thickness of 2.81 μm at 400 kHz. This large MI effect, obtained at such low frequency range, was correlated with the electromagnetic interaction between the inner core and the magnetic coating.

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Kavaliauskas, Žydrūnas, Vilius Dovydaitis, Romualdas Kėželis, Liutauras Marcinauskas, Vitas Valinčius, Arūnas Baltušnikas, Aleksandras Iljinas, Giedrius Gecevičius, and Vytautas Čapas. "Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies." Energies 14, no. 21 (October 21, 2021): 6896. http://dx.doi.org/10.3390/en14216896.

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Plasma spraying and magnetron sputtering were used to form graphite–copper films on an n-type silicon surface. The main objective of this work was to compare the properties of the obtained graphite–copper Schottky photodiodes prepared using two different layer formation methods and to evaluate the influence of copper content on the surface morphology, phase structure, and photovoltaic characteristics of the graphite–copper films. Surface morphology analysis shows that the surface of the formed layers using either plasma spraying technology or the magnetron sputtering method consists of various sphere-shaped microstructures. The X-ray diffraction measurements demonstrated that the graphite–copper coatings formed by plasma spraying were crystalline phase. Meanwhile, the films deposited by magnetron sputtering were amorphous when the copper concentration was up to 9.7 at.%. The increase in copper content in the films led to the formation of Cu crystalline phase. Schottky diodes formed using magnetron sputtering technology had a maximum current density of 220 mA/cm2 at 5 V. Meanwhile, the maximum electric current density of Schottky photodiodes formed using plasma spraying reached 3.8 mA/cm2. It was demonstrated that the efficiency of Schottky diodes formed using magnetron sputtering was up to 60 times higher than Schottky diodes formed using plasma spraying.

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Dostanko, A. P., S. I. Madveyko, E. V. Telesh, S. N. Melnikov, S. M. Zavadski, and D. A. Golosov. "Plasma Systems in Thin Film Technology." Doklady BGUIR 22, no. 2 (April 15, 2024): 20–31. http://dx.doi.org/10.35596/1729-7648-2024-22-2-20-31.

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The article discusses the current trends in the development of ion-plasma systems for ion processing and thin film deposition. Application of pulsed reactive magnetron sputtering for deposition of vanadium oxide films and dependence of process parameters on power supply frequency characteristics, peculiarities and application of direct ion-beam deposition for formation of coatings based on SiO2 for optical coatings, SiO2, CH, CN, CHF for orientation coatings of LCD displays, wear-resistant coatings of diamond-like carbon (α-C) and carbon nitride (CNx) are considered. The advantages of continuous microwave magnetron power over pulsed mode are shown. The mathematical model for calculating magnetron sputtering systems, processes of magnetron sputtering and the main capabilities of the developed software complex Deposition are shown.

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Nazarenko, M. V. "Comparison of magnetron sputtering systems for high-rate deposition of thick copper layers for microelectronic applications." Russian Technological Journal 10, no. 5 (October 20, 2022): 92–99. http://dx.doi.org/10.32362/2500-316x-2022-10-5-92-99.

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Objectives. When designing production equipment for the implementation of metal film deposition processes, the selection of technological sources for providing the required quality (structure, appearance), maximum process efficiency, and productivity, poses a challenging task. Since laboratory results often differ from issues faced in production processes, this choice becomes even more difficult under real production conditions due to a lack of sources for comparison. The purpose of the present work is therefore to compare magnetron deposition methods under real industrial conditions (planar extended magnetron, liquid-phase magnetron and cylindrical magnetron with a rotating cathode), identify their advantages and disadvantages along with features of thus-formed metal films, analyze the economic feasibility of each variant, and give practical recommendations for selecting a source when implementing the described process.Methods. Films were deposited using magnetron sputtering system. Roughness was measured using a MarSurf PS1 profilometer. The structure of the films was studied using a Hitachi SU1510 scanning electron microscope. Film thicknesses were measured by X-ray fluorescence analysis using a Fisherscope X-RAY XDV-SDD measuring instrument.Results. Sources of magnetron sputtering for the high-rate deposition of metallization layers under industrial conditions are considered. Obtained samples were compared according to the following criteria: deposition rate while maintaining the required quality, surface defects, film grain size, roughness, uniformity of the deposited layer, deposition efficiency (the ratio of the metal deposited directly onto the substrate to the amount of metal produced during the process). A comparison of the characteristics showed that the deposition rate for the liquid-phase magnetron is commensurate with the similar parameter for the cylindrical magnetron, exceeding the rate for the classical planar magnetron by about 4 times while maintaining the uniform appearance of the samples. The samples deposited with a liquid-phase magnetron had the highest roughness and the largest grain size. Although the cheapest method, liquid-phase magnetron sputtering achieved the lowest sputtering efficiency.Conclusions. The choice of the deposition method depends on the problem to be solved. The rotatable magnetron system can be considered optimal in terms of cost, deposition rate, and quality of the deposited layers. Liquid-phase magnetron sputtering is recommended for low-cost high-speed deposition where there are no strict requirements for appearance, or in case of operation of small-sized equipment.

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Bingel, Astrid, Kevin Fuchsel, Norbert Kaiser, and Andreas Tunnermann. "Pulsed DC magnetron sputtering of transparent conductive oxide layers." Chinese Optics Letters 11, S1 (2013): S10201. http://dx.doi.org/10.3788/col201311.s10201.

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Bogdanov, R. V., and O. M. Kostiukevych. "Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion." Materials Science-Poland 33, no. 1 (March 1, 2015): 82–94. http://dx.doi.org/10.1515/msp-2015-0001.

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AbstractA computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas) confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

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Bončina, Tonica, Srečko Glodež, Brigita Polanec, Lara Hočuršćak, and Franc Zupanič. "Comprehensive Analysis of Different Coating Materials on the POM Substrate." Materials 16, no. 12 (June 13, 2023): 4365. http://dx.doi.org/10.3390/ma16124365.

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This study presents a comprehensive analysis of different coating materials on the POM substrate. Specifically, it investigated physical vapour deposition (PVD) coatings of aluminium (Al), chromium (Cr), and chromium nitride (CrN) of three various thicknesses. The deposition of Al was accomplished through a three-step process, particularly plasma activation, metallisation of Al by magnetron sputtering, and plasma polymerisation. The deposition of Cr was attained using the magnetron sputtering technique in a single step. For the deposition of CrN, a two-step process was employed. The first step involved the metallisation of Cr using magnetron sputtering, while the second step involved the vapour deposition of CrN, obtained through the reactive metallisation of Cr and nitrogen using magnetron sputtering. The focus of the research was to conduct comprehensive indentation tests to obtain the surface hardness of the analysed multilayer coatings, SEM analyses to examine surface morphology, and thorough adhesion analyses between the POM substrate and the appropriate PVD coating.

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Zhao, Haili, Jingpei Xie, and Aixia Mao. "Effects of Bottom Layer Sputtering Pressures and Annealing Temperatures on the Microstructures, Electrical and Optical Properties of Mo Bilayer Films Deposited by RF/DC Magnetron Sputtering." Applied Sciences 9, no. 7 (April 3, 2019): 1395. http://dx.doi.org/10.3390/app9071395.

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Most of the molybdenum (Mo) bilayer films are deposited by direct current (DC) magnetron sputtering at the bottom and the top layer (DC/DC). However, the deposition of Mo bilayer film by radio frequency (RF) Mo bottom layer and DC Mo top layer magnetron sputtering has been less studied by researchers. In this paper, the bottom layer of Mo bilayer film was deposited by RF magnetron sputtering to maintain its good adhesion and high reflectance, and the top layer was deposited by DC magnetron sputtering to obtain good conductivity (RF/DC). Generally, the bottom layer sputtering pressure is relatively random, in this paper, the effects of the bottom layer RF sputtering pressures on the microstructures and properties of Mo bilayer films were first studied in detail. Next, in order to further improve their properties, the as-prepared Mo bilayer films at 0.4 Pa bottom layer RF sputtering pressure were annealed at different temperatures and then investigated. Specifically, Mo bilayer films were deposited on soda-lime glass substrates by RF/DC magnetron sputtering at different bottom layer RF sputtering pressures in the range of 0.4–1.2 Pa, the powers of bottom layer RF sputtering and top layer DC sputtering were 120 W and 100 W, respectively. Then, Mo bilayer films, prepared at a bottom layer sputtering pressure of 0.4 Pa and top layer sputtering pressure of 0.3 Pa, were annealed for 30 min at various temperatures in the range of 100–400 °C. The effects of bottom layer sputtering pressures and the annealing temperatures on the microstructures, electrical and optical properties of Mo bilayer films were clarified by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic-force microscopy (AFM), and ultraviolet (UV)-visible spectra, respectively. It is shown that with decreasing bottom layer sputtering pressure from 1.2 to 0.4 Pa and increasing annealing temperature from 100 to 400 °C, the crystallinity, electrical and optical properties of Mo bilayer films were improved correspondingly. The optimized Mo bilayer film was prepared at the top layer sputtering pressure of 0.3 Pa, the bottom layer sputtering pressure of 0.4 Pa and the annealing temperature of 400 °C. The extremely low resistivity of 0.92 × 10−5 Ω.cm was obtained. The photo-conversion efficiency of copper indium gallium selenium (CIGS) solar cell with the optimized Mo bilayer film as electrode was up to as high as 13.5%.

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Wang, Li Feng, Ze Yan Wu, and Zhi Jun Meng. "Magnetron Sputtering Yield and Relative Factors." Advanced Materials Research 361-363 (October 2011): 1655–63. http://dx.doi.org/10.4028/www.scientific.net/amr.361-363.1655.

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In this work, we mainly summarize the influence of the ion bombardment cathode (target) and relative factors of magnetron sputtering yield in production thin film. Magnetron sputter deposition permits a much wider selection of film materials, produces films with higher purity and better controlled composition, provides films with greater adhesive strength and homogeneity, and permits better control of deposit thickness. Unlike most other work described about sputtering yield, sputtering for thin-film production is performed using the plasma rather than a focused ion beam. When an ion with the energy hits a surface of the target, a small fraction of the energy and momentum of the incoming ion will, through lattice collisions, be reversed and may cause ejection of surface atoms (sputtering). The average number of the atoms ejected from the cathode surface per incident ion is called the sputtering yield. The sputtering yield varies with the target material, the kind of impinging ion, and the energy of that ion. At a given ion energy, The sputtering yield increases with increasing angle of incidence up to a maximum at an angle between 55 ° and 85 ° with respect to the surface normal [1, 3].

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Mishra, Brajendra, J. J. Moore, Jian Liang Lin, and W. D. Sproul. "Advances in Thin Film Technology through the Application of Modulated Pulse Power Sputtering." Materials Science Forum 638-642 (January 2010): 208–13. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.208.

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High power pulsed magnetron sputtering (HPPMS) is an emerging thin film deposition technology that generate high ionization plasma by applying a very large amount of peak power to a sputtering target for a short period of time. HPPMS is also known as High Power Impulse Magnetron Sputtering (HiPIMS). However, HPPMS/HiPIMS exhibits decreased deposition rate as compared to continuous dc magnetron sputtering. Modulated pulse power (MPP) magnetron sputtering is an alternative HPPIMS deposition technique that overcomes the rate loss problem while still achieving a high degree of ionization of the sputtered material. In the present work, the principles and some important characteristics of MPP technology were presented. Technical examples of CrN coatings were deposited using MPP and continuous dc sources. The positive ion mass distributions were characterized using an electrostatic quadrupole plasma mass spectrometer. The structure and properties of MPP and dc CrN coatings were characterized using x-ray diffraction, scanning electron microscopy, nanoindentation tests, and ball-on-disc wear test. It was found that the MPP CrN coating exhibits denser microstructure and improved mechanical and tribological properties as compared to the dc CrN coating.

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Yamauchi, Michael T., Toshi Shimizu, Mitch Doi, David T. Yasunaga, Takenori Nakayama, and Kazuo Okumura. "Examination of Rubber Adhesion Property of Brass Film on Steel Formed by Magnetron Sputtering." Rubber Chemistry and Technology 78, no. 1 (March 1, 2005): 105–13. http://dx.doi.org/10.5254/1.3547864.

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Abstract Brass films were formed on steel rods by magnetron sputtering by using 63 wt% Cu - 37 wt% Zn target in Ar plasma. The brass plated steel rods were inserted in crude rubber and then cured to form various samples. Rubber-brass inter-reacted layers were investigated by cross sectional TEM observation. Evaluation of adhesion force was also conducted in order to compare with the TEM investigation. The magnetron sputtering brass film has strongly oriented columner crystal structure and thickness of the film is uniform in whole area. The magnetron sputtering film has excellent adhesion regardless of the film thickness that cannot be attained by that of commercially manufactured steel cord.

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Liu, Jun, Zhi Gang Chen, Kai Bi, and Yue Min Wang. "Evaluation on Structure and Tribological Properties of Carbon Nitride Films Deposited on YG8 Carbide Alloy Substrates." Key Engineering Materials 492 (September 2011): 80–84. http://dx.doi.org/10.4028/www.scientific.net/kem.492.80.

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CNx films were deposited on YG8 carbide alloy (WC+8%Co) substrates by DC or RF magnetron sputtering. The composition, bonding state, adhesion, and tribological behavior of CNx films were researched. X-ray Photoelectron spectroscopy results showed that C-N, C=N and C≡N bond existed in CNx films. RF magnetron sputtering is in favor of the bonding of C and N, the adhesion and the wear resistance of CNx films. DC magnetron sputtering is in favor of lubricating ability of CNx films. Substrate bias has some effect on the bonding of C and N, the adhesion of the films, decrease of adhesive wear and the friction coefficient of films.

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Ma, Wei Hong, and Chang Long Cai. "Studying on Thickness Control of ITO Films Deposited Using RF Magnetron Sputtering." Advanced Materials Research 415-417 (December 2011): 1921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1921.

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Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature on the deposition rate of ITO films was mainly studied, meanwhile, the influence of annealing temperature on the film thickness and the process stability depositing ITO using RF magnetron sputtering was studied, and the influence mechanism of technique parameters was analyzed.

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Morel, Erwan, Yoann Rozier, Abderzak El Farsy, and Tiberiu Minea. "Impact of self-sputtering in high power impulse magnetron sputtering (HiPIMS) with helium." Journal of Applied Physics 133, no. 15 (April 21, 2023): 153301. http://dx.doi.org/10.1063/5.0145547.

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Conventional magnetron discharge is a widely used technology for many applications. In the last decade, the high current density sputtering regime has been an interesting alternative for tailoring thin film properties. In this paper, we focused on the electrical characterization of the helium magnetron plasma operated at average gas pressure (5 Pa) with a molybdenum target. Optical emission spectroscopy diagnostics also supports this study by providing information on electron density evolution. The analysis of the plasma–surface interaction zone on the target unveiled the physical mechanisms associated with the high current density range (6 A cm−2), corresponding to different discharge regimes. The self-sputtering yield plays a key role in high-power impulse magnetron sputtering discharge operated with helium. The electron density is highly dependent on the presence of a metal.

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Glushko, S. P. "Selection of technologies for metal film application using physical deposition techniques." Advanced Engineering Research 20, no. 3 (October 5, 2020): 280–88. http://dx.doi.org/10.23947/2687-1653-2020-20-3-280-288.

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Introduction. Obtaining high-quality thin metal films is important for advances in the technologies of applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Various techniques of physical film deposition are applied using technologies of cathode (ion), magnetron and ion beam assisted sputtering. The work objective is to analyze, compare and determine the feasibility of techniques for the physical deposition of thin metal films when applying antifriction and wear-resistant coatings on cutting tools or parts of friction couples. Materials and Methods. Technologies of cathode (ionic), magnetron and ion-beam sputtering are considered. Schematic diagrams, conditions and parameters of the considered processes are presented. Results. An advanced technology for the deposition of thin films, alloying and hardening of the surfaces of metal parts is magnetron sputtering. Continuous wave (cw) magnetrons are used to apply coatings of complex composition or multilayer coatings on flat substrates. Ion beam sputtering is considered a slow sputtering of the target surface by bombardment with a high-energy ion beam and deposition on the substrate surface. Under the ion implantation, the surface of metals is doped with recoil atoms, which receive high energy from accelerated ions and move a few nanometers deeper. This enables to obtain ultra-thin doped layers. Low temperature of ion implantation, the possibility of sufficiently accurate control of the depth and the impurity distribution profile, create the prerequisites for the process automation. Wear tracks are more acidified under the same wear conditions on implanted steel compared to non-implanted steel. The nonequilibrium process under ion implantation causes the formation of such alloys in the surface layers that cannot be obtained under normal conditions due to diffusion of components or limited solubility. Ion implantation makes it possible to obtain alloys of a certain composition in the surface layer. Surface properties can be optimized without reference to the bulk properties of the material. Implantation is possible at low temperatures without a noticeable change in the size of the product.Discussion and Conclusion. Cathode (ion), magnetron and ion-beam sputtering have common advantages: due to the relatively low temperature, the substrate does not overheat; it is possible to obtain uniform coatings; the chemical composition of the deposited coatings is accurately reproduced. The rest of the advantages and disadvantages of the considered methods are individual. The results can be used to create thin films through alternating magnetron and then ionbeam deposition processes, which enables to obtain films uniformly modified in depth. This is important in the production of parts of friction couples and cutting tools to improve their quality.

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Chodun, Rafal, Bartosz Wicher, Katarzyna Nowakowska-Langier, Roman Minikayev, Marlena Dypa-Uminska, and Krzysztof Zdunek. "On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses." Coatings 12, no. 7 (July 19, 2022): 1022. http://dx.doi.org/10.3390/coatings12071022.

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This paper presents the experimental results of high-temperature sputtering of nickel targets by the Gas Injection Magnetron Sputtering (GIMS) technique. The GIMS technique is a pulsed magnetron sputtering technique that involves the generation of plasma pulses by injecting small doses of gas into the zone of the magnetron target surface. Using a target with a dedicated construction to limit heat dissipation and the proper use of injection parameters and electrical power density, the temperature of the target during sputtering can be precisely controlled. This feature of the GIMS technique was used in an experiment with sputtering nickel targets of varying thicknesses and temperatures. Plasma emission spectra and current-voltage waveforms were studied to characterize the plasma process. The thickness, structure, phase composition, and crystallite size of the nickel layers produced on silicon substrates were investigated. Our experiment showed that although the most significant increase in growth kinetics was observed for high temperatures, the low sputtering temperature range may be the most interesting from a practical perspective. The excited plasma has the highest energy in the sputtering temperature range, just above the Curie temperature.

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Ievtushenko, A. I., L. O. Klochkov, O. S. Lytvyn, V. M. Tkach, O. M. Kutsay, S. P. Starik, V. A. Baturin, et al. "The Influence of Oxygen Pressure on ZnO:Al Thin Films Properties Grown by Layer by Layer Growth Method at Magnetron Sputtering." Фізика і хімія твердого тіла 16, no. 4 (December 15, 2015): 667–74. http://dx.doi.org/10.15330/pcss.16.4.667-674.

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The influence of oxygen pressure in the deposition chamber on the structure, morphology, optical and electrical properties of aluminum doped ZnO films deposited by a layer by layer growth method in magnetron sputtering on glass substrates was studied. The effect of the application of the traditional one-step approach and our proposed layer by layer growth method in magnetron sputtering on the properties of doped by aluminum ZnO films was analyzed. It is found that with decreasing oxygen pressure in the deposition chamber improves the structure, increases transmittance in the visible spectrum of radiation and decreases resistivity of ZnO:Al films. It is shown that the application of layer by layer growth method in magnetron sputtering allows to grow the transparent conductive ZnO:Al films with higher performance parameters, compared with the films which condensed by traditional approach in magnetron sputtering. The layer by layer growth method allows to grown ZnO:Al films with electrical resistance at 6.1·10-4 Ohm·cm and transmission in the visible light of 95%, which is promising for their aplication in photovoltaic devices.

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Xie, Jian Sheng, Jin Hua Li, and Ping Luan. "Property Comparison of CuInSi Films Prepared by Multilayer Synthesized and Magnetron Co-Sputtering." Applied Mechanics and Materials 110-116 (October 2011): 3755–61. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.3755.

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Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by magnetron co-sputtering method and multilayer synthesized method respectively,and followed by annealing in N2 atmosphere at different temperatures. The structure of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at about 2θ=42.308°,meanwhile,there are In2O3 peak and other peaks in the XRD patterns of films. The morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated, But the crystalline of the film prepared by magnetron co-sputtering with needle shape. The grain size is a few hundred angstroms. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV for the sample by magnetron co-sputtering, and 1.45eV for the sample by multilayer synthesized, but all changes with the purity of CuInSi.

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Chen, Hai Feng, Jian Hua Zhu, Long Jie Chen, and Miao Gen Qian. "Preparation and Contrast of Transparent Conductive TiO₂/Ag/ZnS Film by Magnetron Sputtering and Evaporation Coating Deposition." Applied Mechanics and Materials 117-119 (October 2011): 1152–55. http://dx.doi.org/10.4028/www.scientific.net/amm.117-119.1152.

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In this paper, TiO2/Ag/TiO2 and TiO2/Ag/ZnS films were prepared by evaporation coating (EC) and magnetron sputtering (MS). To test the resistance and light transmission rate to characterize the coating effect, both the size of indirect resistance that the relative thickness of the situation. By comparing the single magnetron sputtering and evaporation coating fabricated by the two transparent conductive oxide films (TCO) material conductivity and light transmission properties, determine a reasonable process. Firstly, the first layer is TiO2 film by magnetron sputtering, and then coating Ag film and ZnS film plated by evaporation, the final form of TiO2/Ag/ZnS film, which haSubscript textd much higher transmittance than TiO2/Ag/TiO2 at the same resistancSubscript texte.

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Motomura, Taisei, Kenshin Takemura, Toshimi Nagase, Nobutomo Morita, and Tatsuo Tabaru. "Suppression of substrate temperature in DC magnetron sputtering deposition by magnetic mirror-type magnetron cathode." AIP Advances 13, no. 2 (February 1, 2023): 025153. http://dx.doi.org/10.1063/5.0138840.

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Magnetron sputtering generally increases the temperature of the substrate placed to face the sputtering target above 40 °C because the plasmas are transported through unbalanced magnetic field lines from the sputtering target to the substrate surface. However, by using a magnetic mirror-type magnetron cathode, we were able to suppress the temperature of the substrate temperature to the environmental temperature of less than 40 °C at a target–substrate distance of [Formula: see text]50 mm with a DC input power of [Formula: see text]30 W and an Ar gas pressure of [Formula: see text]0.15 Pa. This was possible because the balanced magnetic field lines confined the plasmas near the sputtering target. By enabling film deposition on low heat-resistant substrates, this deposition technique for suppressing the substrate temperature may have uses in various application fields.

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Berastegui, Pedro, Lars Riekehr, and Ulf Jansson. "Magnetron Sputtering of Nanolaminated Cr2AlB2." Coatings 10, no. 8 (July 27, 2020): 735. http://dx.doi.org/10.3390/coatings10080735.

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A ternary Cr2AlB2 phase was deposited as a film using magnetron sputtering. Its anisotropic structure displays both structural and chemical similarities with the nanolaminated MAX phases (Mn+1AXn (n = 1–3) where M usually is an early transition metal, A is typically an element in group 13–14 and X is C or N), and can be described as CrB slabs separated by layers of Al. Combinatorial sputtering was used to optimise the sputtering process parameters for films with the Cr2AlB2 composition. The influences of substrate, temperature and composition were studied using X-ray diffraction, X-ray photoelectron spectroscopy and electron microscopy. Films deposited at room temperature were X-ray amorphous but crystalline films could be deposited on MgO substrates at 680 °C using a composite Al-B, Cr and Al targets. X-ray diffraction analyses showed that the phase composition and texture of the films was strongly dependent on the chemical composition. Films with several phases or with a single Cr2AlB2 phase could be deposited, but an additional Al target was required to compensate for a loss of Al at the high deposition temperatures used in this study. The microstructure evolution during film growth was strongly dependent on composition, with a change in texture in Al-rich films from a preferred [010] orientation to a [100]/[001] orientation. A model based on Al desorption from the surface of the growing grains is proposed to explain the texture variations.

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Semenov, V. A., S. V. Rabotkin, V. O. Oskirko, A. N. Zakharov, and A. P. Pavlov. "Packet-pulse dual magnetron sputtering." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 7 (2019): 89–96. http://dx.doi.org/10.17223/00213411/62/7/89.

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Yang, S. C., K. Cooke, A. Aramcharoen, P. Mativenga, and D. Teer. "Microtool coatings using magnetron sputtering." Materials Technology 26, no. 1 (February 2011): 20–24. http://dx.doi.org/10.1179/175355511x12941605982145.

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Yehya, M., and P. J. Kelly. "Novel Enhanced Magnetron Sputtering System." Surface Engineering 20, no. 3 (June 2004): 177–80. http://dx.doi.org/10.1179/026708404225016364.

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Journal articles on the topic 'Magnetron sputtering'

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