Dissertations / Theses on the topic 'Magnetron sputtering'
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1
Marriott, Timothy. "Magnetron sputtering of bioceramics." Thesis, University of Nottingham, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.539210.
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2
Brookes, Marc. "Novel components by magnetron sputtering." Thesis, University of Salford, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491045.
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The advent of the closed field unbalanced magnetron sputtering (CFUBMS) technique has provided a novel method for the production of ultra thick multilayer coatings, which form free standing foils when removed from the substrate. Applications for this method range from the production of complex metal/ceramic probe tips, to an alternative route for the production of axisymmetric high precision-machined components, such as a bellows component used in the production of uranium enrichment by the sponsors of this project, Urenco (Capenhurst) Ltd. In this study the CFUBMS system was developed to grow metallic and reactive compound multilayer foils. These foils were tested for compatibility with uranium hexafluoride, UF6 , a corrosive gas used in the production of enriched uranium that is also in contact with the bellows component.
3
Spencer, Alaric Graham. "High rate reactive magnetron sputtering." Thesis, Loughborough University, 1988. https://dspace.lboro.ac.uk/2134/10464.
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Glow discharge sputtering has been used for many years to produce thin films but its commercial applications are severely limited by low deposit ion rates. The DC planar magnetron, developed a decade ago, allows much higher deposition rates and its commercial use has expanded rapidly. Non-reactive magnetron sputtering of metallic thin films is well understood and utilized. However when a reactive gas is introduced the process becomes harder to control and can switch between two stable modes. Often films are produced simply by using one of these stable modes even though this does not lead to optimum film properties or high deposition rates. This work gives a model of reactive magnetron sputtering and verifies experimentally its predictions. A 0.5 m long magnetron was designed and built specifically to allow reactive sputtering onto A4 rigid substrates. This magnetron has a variable magnetic field distribution which allows plasma bombardment of the substrate during film growth. This was shown to activate reactions at the substrate. The target lifetime was extended in our design by broadening the erosion zone and increasing the target thickness. The reactive sputtering process was shown to be inherently unstable and a control system was designed to maintain the magnetron in an unstable state. Light emission by the plasma at metal line emission wavelengths changes across the instability and so with this control signal a feedback system was built. The accuracy of control was shown experimentally and theoretically to depend on the delay time between measurement, action and effect. In practice this delay was limited by the time constant of the gas distribution manifold. The time constant of such manifolds was measured and calculated. Using our controller high quality films were produced at high rates in normally unstable deposition systems. Conducting indium oxide was produced at 6 nm/s with a resistivity of 6 x 10-6 ohm. metres onto A4 glass sheets. Tin oxide was produced at increased rates onto 2.5 m by 3 m substrates.
4
Eleuterio, Filho Sebastião. "Magnetron Sputtering planar construção e aplicação." [s.n.], 1991. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277105.
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Orientador: Sergio Artur Bianchini BilacDissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-07-14T00:34:53Z (GMT). No. of bitstreams: 1 EleuterioFilho_Sebastiao_M.pdf: 3937274 bytes, checksum: 3a5a8e1cc4df74ca5071ce507ea876fa (MD5) Previous issue date: 1991
Resumo: A técnica de deposição de filmes magnetron sputtering apresenta muitas vantagens em relação à outros métodos, como por exemplo, a simplicidade do equipamento, o baixo custo de manutenção, fácil manuseio e, a possibilidade de obtenção de altas taxas de deposição. Sua utilização é hoje muito difundida em áreas como; microeletrônica, metalurgia e óptica. Foram projetados, desenvolvidos e caracterizados cátodos magnetron de corrente continua do tipo planar, circulares e retangulares. Foram também depositados e caracterizados filmes metálicos e liga metálica para comprovar o funcionamento do magnetron sistema de disposição. Os resultados foram excelentes comparados ao resultados presentes na literatura
Abstract: Magnetron sputtering, as a thin film deposition technique, shows advantage regarding other deposition methods, for example, the equipment can be relatively simple, easy handling, low maintenance cost and, make possible high rate deposition. The utilization of the technique in microelectronics, metallurgy and optics are unquestionable. Planar magnetron sources (circular and rectangular) were designed, developed and characterized. Metals and metal alloy films were deposited to confirm operation as a film deposition system. The results were excellent when compared to literature
Mestrado
Física
Mestre em Física
5
Huo, Chunqing. "Modeling High Power Impulse Magnetron Sputtering Discharges." Licentiate thesis, KTH, Rymd- och plasmafysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-94002.
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HiPIMS, high power impulse magnetron sputtering, is a promising technology that has attracted a lot of attention ever since its appearance. A time-dependent plasma discharge model has been developed for the ionization region in HiPIMS discharges. As a flexible modeling tool, it can be used to explore the temporal variations of the ionized fractions of the working gas and the sputtered vapor, the electron density and temperature, and the gas rarefaction and refill processes. The model development has proceeded in steps. A basic version IRM I is fitted to the experimental data from a HiPIMS discharge with 100 μs long pulses and an aluminum target. A close fit to the experimental current waveform, and values of density, temperature, gas rarefaction, as well as the degree of ionization shows the validity of the model. Then an improved version is first used for an investigation of reasons for deposition rate loss, and then fitted for another HiPIMS discharge with 400 μs long pulses and an aluminum target to investigate gas rarefaction, degree of ionization, degree of self sputtering, and the loss in deposition rate, respectively. Through these results from the model, we could analyse further the potential distribution and its evolution as well as the possibility of a high deposition rate window to optimize the HiPIMS discharge. Besides this modeling, measurements of HiPIMS discharges with 100 μs long pulses and a copper target are made and analyzed. A description, based on three different types of current systems during the ignition, transition and steady phase, is used to describe the evolution of the current density distribution in the pulsed plasma. The internal current density ratio is a key transport parameter. It is reported how it varies with space and time, governing the cross-B resistivity and the energy of the charged particles. From the current ratio the electron cross-B transport can be obtained and used as essential input when modeling the axial electric field, governing the back-attraction of ions.QC 20120504
6
Yahia, Maymon. "Development of an enhanced magnetron sputtering system." Thesis, University of Salford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490427.
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The magnetron sputtering process has become established as the process of choice for the deposition of a wide range of industrially important coatings. However, despite its successes, there are inherent limitations in the current process. The ion-to-atom ratio incident at the substrate, which has a profound effect on coating properties, cannot readily be varied using present technology. Consequently, film properties may not be optimal. The relation between the incident charge and the energy delivered to the surface is another parameter that cannot be controlled in classical magnetron sputtering systems. This in turn can lead to difficulties in controlling the reaction between reactive gases and deposited materials, controlling the surface status prior, during and after deposition, monitoring the natural growth of native oxides and their combined effect on the adhesion of the thin film and the optical and electrical properties of the coated surface.
7
Böhlmark, Johan. "Fundamentals of high power impulse magnetron sputtering /." Linköping : Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.
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Böhlmark, Johan. "Fundamentals of High Power Impulse Magnetron Sputtering." Doctoral thesis, Linköpings universitet, Plasma och beläggningsfysik, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.
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In plasma assisted thin film growth, control over the energy and direction of the incoming species is desired. If the growth species are ionized this can be achieved by the use of a substrate bias or a magnetic field. Ions may be accelerated by an applied potential, whereas neutral particles may not. Thin films grown by ionized physical vapor deposition (I-PVD) have lately shown promising results regarding film structure and adhesion. High power impulse magnetron sputtering (HIPIMS) is a relatively newly developed technique, which relies on the creation of a dense plasma in front of the sputtering target to produce a large fraction of ions of the sputtered material. In HIPIMS, high power pulses with a length of ~100 μs are applied to a conventional planar magnetron. The highly energetic nature of the discharge, which involves power densities of several kW/cm2, creates a dense plasma in front of the target, which allows for a large fraction of the sputtered material to be ionized. The work presented in this thesis involves plasma analysis using electrostatic probes, optical emission spectroscopy (OES), magnetic probes, energy resolved mass spectrometry, and other fundamental observation techniques. These techniques used together are powerful plasma analysis tools, and used together give a good overview of the plasma properties is achieved. from the erosion zone of the magnetron. The peak plasma density during the active cycle of the discharge exceeds 1019 electrons/m3. The expanding plasma is reflected by the chamber wall back into the center part of the chamber, resulting in a second density peak several hundreds of μs after the pulse is turned off. Optical emission spectroscopy (OES) measurements of the plasma indicate that the degree of ionization of sputtered Ti is very high, over 90 % in the peak of the pulse. Even at relatively low applied target power (~200 W/cm2 peak power) the recorded spectrum is totally dominated by radiation from ions. The recorded HIPIMS spectra were compared to a spectrum taken from a DC magnetron discharge, showing a completely different appearance. Magnetic field measurements performed with a coil type probe show significant deformation in the magnetic field of the magnetrons during the pulse. Spatially resolved measurements show evidence of a dense azimuthally E×B drifting current. Circulating currents mainly flow within 2 away cm from the target surface in an early part of the pulse, to later diffuse axially into the chamber and decrease in intensity. We record peak current densities of the E×B drift to be of the order of 105 A/m2. A mass spectrometry (MS) study of the plasma reveals that the HIPIMS discharge contains a larger fraction of highly energetic ions as compared to the continuous DC discharge. Especially ions of the target material are more energetic. Time resolved studies show broad distributions of ion energies in the early stage of the discharge, which quickly narrows down after pulse switch-off. Ti ions with energies up to 100 eV are detected. The time average plasma contains mainly low energy Ar ions, but during the active phase of the discharge, the plasma is highly metallic. Shortly after pulse switch-on, the peak value of the Ti1+/Ar1+ ratio is over 2. The HIPIMS discharge also contains a significant amount of doubly charged ions.
9
Hales, P. W. "Resistive and superconducting magnets for magnetron sputtering." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442462.
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10
Ja'fer, Hussein Abidjwad. "Plasma-assisted deposition using an unbalanced magnetron." Thesis, Loughborough University, 1993. https://dspace.lboro.ac.uk/2134/27734.
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It is well known that ion bombardment of growing films can strongly influence their microstructure and consequently their physical properties. The available technology for ion assisted deposition, particularly where separate sources are used for the deposition flux and the ion flux, is difficult to implement in many production situations. The planar magnetron provides a controllable ion flux while retaining the many other desirable features of simplicity, high deposition rate, geometric versatility and tolerance of reactive gases. This assists in the implementation of ion beam assisted deposition in both research and production.
11
Sveinsson, Ólafur Björgvin. "Measurement setup for High Power Impulse Magnetron Sputtering." Thesis, Uppsala universitet, Signaler och System, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-162988.
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Recently material physics group at Science Institute of University of Iceland has been using reactive sputtering to grow thin films used in various research projects at the institute. These films have been grown using dc sputtering which has been proven a very successful method. High power impulse magnetron sputtering or HiPIMS is an new pulsed power sputtering method where shorter but high power pulses are used to sputter over lower steady power. The project resulted in a functional system capable of growing thin films using HiPIMS. Thin films grown with high power pulses have a higher film density and other more preferable properties compared to films grown using direct current magnetron sputtering.
12
Lundin, Daniel. "Plasma properties in high power impulse magnetron sputtering." Licentiate thesis, Linköping : Department of Physics, Chemistry, and Biology, Linköping University, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11621.
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Petty, Thomas. "Tungsten nanostructure formation in a magnetron sputtering device." Thesis, University of Liverpool, 2015. http://livrepository.liverpool.ac.uk/2036140/.
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Fuzzy tungsten is a phenomena that could potentially occur in future fusion reactors. There are three conditions for fuzz to form, the existence of He ions impinging on a tungsten sample for a sufficient amount of time, that these ions be of sufficient energy, and that the surface temperature of the tungsten is hot enough. These conditions will likely be fulfilled in ITER, the future flagship fusion reactor. Therefore efforts to understand and characterise the fuzz formation are of importance. A thorough literature review has been provided, bringing together for the first time works from over 100 papers on the area. The history of its discovery is explained and the characteristics of the structure are detailed. The potential for fuzz to occur in ITER is shown, and positive and negative aspects of fuzz for fusion operation are discussed. The current accepted growth mechanisms are explained and a brief summary of the current work on simulating the phenomena is given. Fuzz appearing on other metals is introduced, and evidence of creating fuzz in a tokamak is shown. Methods for removing fuzz are presented should it be deemed necessary to do so in ITER. Results are compiled from many fuzz samples created in the literature spanning four orders of magnitude of fluence. This provided the foundation for a collaboration with the UC San Diego, and lab time at their facilities. Several samples were created to complement the dataset. The compilation provides new insights into the growth equation surrounding fuzz formation. A new addition to the equation is introduced in the form of an incubation fluence, a minimum fluence required before fuzz can develop. The growth model is expanded to fuzz grown in erosive regimes, and a new equation is proposed that encompasses the competition between growth and erosion, giving good predictions for the resulting equilibrium thickness. A new method for creating fuzz has been developed in a cheap and simple way. Conventional methods involve using large scale expensive devices, only available in a select few places worldwide. Magnetrons are apparent in many laboratories around the world and a technique for making fuzz in them has been developed. The three parameters controlling fuzz formation have been studied in the magnetron by making samples at many different conditions. The results provide new insight into early fuzz formation, providing results in a fluence range often over-looked. A cross-over fluence is noted from pre-fuzz to fully formed fuzz, overlapping with the predicted incubation fluence. The results differ slightly from fuzz created in other devices at similar fluence. The most probable cause is due to the unique existence of deposition of metallic particles in a magnetron incident on the samples during the growth of fuzz.
14
Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A23651.
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Objective of the present work is a broad investigation of the so called "target poisoning" during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator. A manipulator allows to move the magnetron vertically and thereby the lateral investigation of the target surface. During magnetron operation the inert and reactive gas flow were adjusted using mass flow controllers resulting in an operating pressure of about 0.3 Pa. The argon flow was fixed, whereas the nitrogen flow was varied to realize different states of target poisoning. In a fi?rst step the mass spectrometer was used to verify and measure basic plasma properties e.g. the residual gas composition, the behavior of reactive gas partial pressure, the plasma potential and the dissociation degree of reactive gas molecules. Based on the non-uniform appearance of the magnetron discharge further measurements were performed in order to discuss the role of varying particle fluxes across the target during the poisoning process. Energy and yield of sputtered particles were analyzed laterally resolved, which allows to describe the surface composition of the target. The energy resolving mass spectrometer was placed at substrate position and the target surface was scanned by changing the magnetron position correspondingly. It was found, that the obtained energy distributions (EDF) of sputtered particles are influenced by their origin, showing signi?ficant differences between the center and the erosion zone of the target. These results are interpreted in terms of laterally different states of target poisoning, which results in a variation of the surface binding energy. Consequently the observed energy shift of the EDF indicates the metallic or already poisoned fraction on target surface. Furthermore the EDF's obtained in reactive sputtering mode are broadened. Thus a superposition of two components, which correspond to the metallic and compound fractions of the surface, is assumed. The conclusion of this treatment is an discrete variation of surface binding energy during the transition from metallic to compound target composition. The reactive gas target coverage as derived from the sputtered energy distributions is in reasonable agreement with predictions from model calculations. The target uptake of nitrogen was determined by means of ion beam analysis using the 14N(d, )12C nuclear reaction. Measurements at varying nitrogen gas flow directly demonstrate the poisoning eff?ect. The reactive gas uptake saturates at a maximum nitrogen areal density of about 1.1016 cm-2 which corresponds to the stoichiometric limit of a 3 nm TiN layer. At sufficiently low reactive gas flow a scan across the target surface discloses a pronounced lateral variation of target poisoning, with a lower areal density in the target race track compared to the target center and edge. Again the findings are reproduced by model calculations, which confirm that the balance of reactive gas injection and sputter erosion is shifted towards erosion in the race track. Accomplished computer simulations of the reactive sputtering process are similar to Berg's well known model. Though based on experimental findings the algorithm was extended to an analytical two layer model which includes the adsorption of reactive gas as well as its different kinds of implantation. A distribution of ion current density across the target diameter is introduced, which allows a more detailed characterization of the processes at the surface. Experimental results and computer simulation have shown that at sufficiently low reactive gas flow, metallic and compound fractions may exist together on the target surface, which is in contradiction to previous simulations, where a homogeneous reactive gas coverage is assumed. Based on the results the dominant mechanisms of nitrogen incorporation at different target locations and at varying reactive gas admixture were identified.Gegenstand der Arbeit ist die Untersuchung der Targetvergiftung beim reaktiven Magnetronsputtern von TiN in Argon-Sticksoff Atmosphäre. Die Untersuchungen beinhalten die Echtzeit in-situ Ionenstrahlanalyse des Stickstoffeinbaus in das Titantarget während des Depositionsprozesses sowie die Analyse der Teilchenflüsse vom – und hin zum Sputtertarget mittels energieaufgelöster Massenspektrometrie. Das Magnetron wurde in einer Vakuumkammer installiert, welche an die Beamline des 5 MV Tandembeschleunigers angeschlossen war. Die Position des Magnetrons konnte mittels eines Manipulator verändert werden, was die laterale Untersuchung der Targetoberfläche ermöglichte. Während des Magnetronbetriebes wurde der Argonfluss in die Kammer konstant gehalten, während der Stickstofffluss variiert wurde um verschiedene Ausprägungen der Targetvergiftung zu erreichen. In einem ersten Schritt wurden die Eigenschaften des Plasmas, z.B. die Zusammensetzung des Sputtergases, das Verhalten des Reaktivgaspartialdruckes, das Plasmapotenzial und der Dissoziationsgrad der Reaktivgasmoleküle im Plasma, mit dem Massenspektrometer ermittelt. Aufgrund der ungleichmäßigen Gasentladung vor dem Magnetrontarget, wurden auch lateral variierende Teilchenflüssen und eine ungleichmäßige Targetvergiftung angenommen. Die Energie und die Ausbeute von gesputterten Teilchen wurde deshalb lateral aufgelöst untersucht. Das Massenspektrometer wurde zu diesem Zweck am Ort des Substrates positioniert und die Targetoberfläche konnte gescannt werden indem die Magnetronposition verändert wurde. Die so aufgenommenen Energieverteilungen der gesputterten Teilchen zeigen eine räumliche Abhängigkeit. Teilchen die aus dem Targetzentrum stammen unterscheiden sich hinsichtlich ihrer Energie signifikant von den Teilchen die in der Target-Erosionszone gesputtert werden. Dieses Resultat zeigt die ungleichmäßige Targetvergiftung, wodurch es zu einer Veränderung der Oberflächenbindungsenergie kommt. Über die Verschiebung in der Energieverteilung lässt sich somit der Zustand der Targetoberfläche beschreiben. Diese experimentellen Ergebnisse zeigen Übereinstimmung mit den Ergebnissen der Modellrechnungen. Der Stickstoffgehalt des Targets wurde weiterhin mittels Ionenstrahlanalyse (NRA) bestimmt. Messungen bei verschiedenen Stickstoffflüssen demonstrieren direkt die Vergiftung des Targets. Die maximale Stickstoffkonzentration sättigt bei einem Wert, der dem Stickstoffgehalt in einer ca. 3 nm dicken Titannitridschicht entspricht. Bei ausreichend niedrigem Stickstofffluss zeigt die Messung quer über den Targetdurchmesser eine Variation im Stickstoffgehalt. Die Stickstoffkonzentration in der Erosionszone ist deutlich geringer als im Targetzentrum oder am Targetrand. Die Resultate wurden wiederum durch Modellrechnungen bestätigt. Die durchgeführten Computersimulationen basieren auf Sören Bergs Modell des reaktiven Sputterprozesses. Der Algorithmus wurde jedoch auf der Basis der experimentellen Ergebnisse erweitert. Das Modell beinhaltet nun Mechanismen des Reaktivgaseinbaus in das Target, wie Adsorption, Implantation und Recoilimplantation. Des Weiteren wurde die Ionenstromverteilung als Funktion des Targetdurchmessers in das Modell aufgenommen, was eine detailliertere Beschreibung des Prozesses ermöglicht. Die experimentellen Ergebnisse und die Resultate der Computersimulation zeigen, dass bei niedrigen Reaktivgasflüssen metallische und vergiftete Bereiche auf der Targetoberfläche gemeinsam existieren. Das ist im Widerspruch zu älteren Simulationen, in denen von einer homogenen Targetbedeckung durch das Reaktivgas ausgegangen wird. Basierend auf den Ergebnissen wurden die dominierenden Mechanismen des Reaktivgaseinbaus in das Sputtertarget, in Abhängigkeit von der Position und von der Sputtergaszusammensetzung, identifiziert.
15
Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1240493527858-26662.
Full textAbstract:
Objective of the present work is a broad investigation of the so called "target poisoning" during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator. A manipulator allows to move the magnetron vertically and thereby the lateral investigation of the target surface. During magnetron operation the inert and reactive gas flow were adjusted using mass flow controllers resulting in an operating pressure of about 0.3 Pa. The argon flow was fixed, whereas the nitrogen flow was varied to realize different states of target poisoning. In a fi?rst step the mass spectrometer was used to verify and measure basic plasma properties e.g. the residual gas composition, the behavior of reactive gas partial pressure, the plasma potential and the dissociation degree of reactive gas molecules. Based on the non-uniform appearance of the magnetron discharge further measurements were performed in order to discuss the role of varying particle fluxes across the target during the poisoning process. Energy and yield of sputtered particles were analyzed laterally resolved, which allows to describe the surface composition of the target. The energy resolving mass spectrometer was placed at substrate position and the target surface was scanned by changing the magnetron position correspondingly. It was found, that the obtained energy distributions (EDF) of sputtered particles are influenced by their origin, showing signi?ficant differences between the center and the erosion zone of the target. These results are interpreted in terms of laterally different states of target poisoning, which results in a variation of the surface binding energy. Consequently the observed energy shift of the EDF indicates the metallic or already poisoned fraction on target surface. Furthermore the EDF's obtained in reactive sputtering mode are broadened. Thus a superposition of two components, which correspond to the metallic and compound fractions of the surface, is assumed. The conclusion of this treatment is an discrete variation of surface binding energy during the transition from metallic to compound target composition. The reactive gas target coverage as derived from the sputtered energy distributions is in reasonable agreement with predictions from model calculations. The target uptake of nitrogen was determined by means of ion beam analysis using the 14N(d, )12C nuclear reaction. Measurements at varying nitrogen gas flow directly demonstrate the poisoning eff?ect. The reactive gas uptake saturates at a maximum nitrogen areal density of about 1.1016 cm-2 which corresponds to the stoichiometric limit of a 3 nm TiN layer. At sufficiently low reactive gas flow a scan across the target surface discloses a pronounced lateral variation of target poisoning, with a lower areal density in the target race track compared to the target center and edge. Again the findings are reproduced by model calculations, which confirm that the balance of reactive gas injection and sputter erosion is shifted towards erosion in the race track. Accomplished computer simulations of the reactive sputtering process are similar to Berg's well known model. Though based on experimental findings the algorithm was extended to an analytical two layer model which includes the adsorption of reactive gas as well as its different kinds of implantation. A distribution of ion current density across the target diameter is introduced, which allows a more detailed characterization of the processes at the surface. Experimental results and computer simulation have shown that at sufficiently low reactive gas flow, metallic and compound fractions may exist together on the target surface, which is in contradiction to previous simulations, where a homogeneous reactive gas coverage is assumed. Based on the results the dominant mechanisms of nitrogen incorporation at different target locations and at varying reactive gas admixture were identifiedGegenstand der Arbeit ist die Untersuchung der Targetvergiftung beim reaktiven Magnetronsputtern von TiN in Argon-Sticksoff Atmosphäre. Die Untersuchungen beinhalten die Echtzeit in-situ Ionenstrahlanalyse des Stickstoffeinbaus in das Titantarget während des Depositionsprozesses sowie die Analyse der Teilchenflüsse vom – und hin zum Sputtertarget mittels energieaufgelöster Massenspektrometrie. Das Magnetron wurde in einer Vakuumkammer installiert, welche an die Beamline des 5 MV Tandembeschleunigers angeschlossen war. Die Position des Magnetrons konnte mittels eines Manipulator verändert werden, was die laterale Untersuchung der Targetoberfläche ermöglichte. Während des Magnetronbetriebes wurde der Argonfluss in die Kammer konstant gehalten, während der Stickstofffluss variiert wurde um verschiedene Ausprägungen der Targetvergiftung zu erreichen. In einem ersten Schritt wurden die Eigenschaften des Plasmas, z.B. die Zusammensetzung des Sputtergases, das Verhalten des Reaktivgaspartialdruckes, das Plasmapotenzial und der Dissoziationsgrad der Reaktivgasmoleküle im Plasma, mit dem Massenspektrometer ermittelt. Aufgrund der ungleichmäßigen Gasentladung vor dem Magnetrontarget, wurden auch lateral variierende Teilchenflüssen und eine ungleichmäßige Targetvergiftung angenommen. Die Energie und die Ausbeute von gesputterten Teilchen wurde deshalb lateral aufgelöst untersucht. Das Massenspektrometer wurde zu diesem Zweck am Ort des Substrates positioniert und die Targetoberfläche konnte gescannt werden indem die Magnetronposition verändert wurde. Die so aufgenommenen Energieverteilungen der gesputterten Teilchen zeigen eine räumliche Abhängigkeit. Teilchen die aus dem Targetzentrum stammen unterscheiden sich hinsichtlich ihrer Energie signifikant von den Teilchen die in der Target-Erosionszone gesputtert werden. Dieses Resultat zeigt die ungleichmäßige Targetvergiftung, wodurch es zu einer Veränderung der Oberflächenbindungsenergie kommt. Über die Verschiebung in der Energieverteilung lässt sich somit der Zustand der Targetoberfläche beschreiben. Diese experimentellen Ergebnisse zeigen Übereinstimmung mit den Ergebnissen der Modellrechnungen. Der Stickstoffgehalt des Targets wurde weiterhin mittels Ionenstrahlanalyse (NRA) bestimmt. Messungen bei verschiedenen Stickstoffflüssen demonstrieren direkt die Vergiftung des Targets. Die maximale Stickstoffkonzentration sättigt bei einem Wert, der dem Stickstoffgehalt in einer ca. 3 nm dicken Titannitridschicht entspricht. Bei ausreichend niedrigem Stickstofffluss zeigt die Messung quer über den Targetdurchmesser eine Variation im Stickstoffgehalt. Die Stickstoffkonzentration in der Erosionszone ist deutlich geringer als im Targetzentrum oder am Targetrand. Die Resultate wurden wiederum durch Modellrechnungen bestätigt. Die durchgeführten Computersimulationen basieren auf Sören Bergs Modell des reaktiven Sputterprozesses. Der Algorithmus wurde jedoch auf der Basis der experimentellen Ergebnisse erweitert. Das Modell beinhaltet nun Mechanismen des Reaktivgaseinbaus in das Target, wie Adsorption, Implantation und Recoilimplantation. Des Weiteren wurde die Ionenstromverteilung als Funktion des Targetdurchmessers in das Modell aufgenommen, was eine detailliertere Beschreibung des Prozesses ermöglicht. Die experimentellen Ergebnisse und die Resultate der Computersimulation zeigen, dass bei niedrigen Reaktivgasflüssen metallische und vergiftete Bereiche auf der Targetoberfläche gemeinsam existieren. Das ist im Widerspruch zu älteren Simulationen, in denen von einer homogenen Targetbedeckung durch das Reaktivgas ausgegangen wird. Basierend auf den Ergebnissen wurden die dominierenden Mechanismen des Reaktivgaseinbaus in das Sputtertarget, in Abhängigkeit von der Position und von der Sputtergaszusammensetzung, identifiziert
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Forsén, Rikard. "Dynamic pressure measurements in high power impulse magnetron sputtering." Thesis, Linköping University, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-52551.
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A microphone has been used to measure the dynamic pressure inside a vacuum chamber during high power impulse magnetron sputtering with high enough time-resolution (~µs) to track the pressure change during the discharge pulse. An experimental measurement of the dynamic pressure is of interest since it would give information about gas depletion, which is believed to dramatically alter the plasma discharge characteristics. This investigation has shown that the magnitude of the pressure wave, which arises due to the gas depletion, corresponds to a 0.4 - 0.7Pa (3 - 5.5mTorr) pressure difference at a distance of 15cm from the target, with base pressures of 2 - 6mTorr for a peak current of 110A. It has also been shown that another pressure wave, about 250µs later, can be detected. Its explanation is suggested to be that the initial pressure wave is bouncing against the chamber walls and thereby causing another peak.
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Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-27841.
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Objective of the present work is a broad investigation of the so called target poisoning during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator. A manipulator allows to move the magnetron vertically and thereby the lateral investigation of the target surface. During magnetron operation the inert and reactive gas flow were adjusted using mass flow controllers resulting in an operating pressure of about 0.3 Pa. The argon flow was fixed, whereas the nitrogen flow was varied to realize different states of target poisoning. In a fi?rst step the mass spectrometer was used to verify and measure basic plasma properties e.g. the residual gas composition, the behavior of reactive gas partial pressure, the plasma potential and the dissociation degree of reactive gas molecules. Based on the non-uniform appearance of the magnetron discharge further measurements were performed in order to discuss the role of varying particle fluxes across the target during the poisoning process. Energy and yield of sputtered particles were analyzed laterally resolved, which allows to describe the surface composition of the target. The energy resolving mass spectrometer was placed at substrate position and the target surface was scanned by changing the magnetron position correspondingly. It was found, that the obtained energy distributions (EDF) of sputtered particles are influenced by their origin, showing signi?ficant differences between the center and the erosion zone of the target. These results are interpreted in terms of laterally different states of target poisoning, which results in a variation of the surface binding energy. Consequently the observed energy shift of the EDF indicates the metallic or already poisoned fraction on target surface. Furthermore the EDF's obtained in reactive sputtering mode are broadened. Thus a superposition of two components, which correspond to the metallic and compound fractions of the surface, is assumed. The conclusion of this treatment is an discrete variation of surface binding energy during the transition from metallic to compound target composition. The reactive gas target coverage as derived from the sputtered energy distributions is in reasonable agreement with predictions from model calculations. The target uptake of nitrogen was determined by means of ion beam analysis using the 14N(d, )12C nuclear reaction. Measurements at varying nitrogen gas flow directly demonstrate the poisoning eff?ect. The reactive gas uptake saturates at a maximum nitrogen areal density of about 1.1016 cm-2 which corresponds to the stoichiometric limit of a 3 nm TiN layer. At sufficiently low reactive gas flow a scan across the target surface discloses a pronounced lateral variation of target poisoning, with a lower areal density in the target race track compared to the target center and edge. Again the findings are reproduced by model calculations, which confirm that the balance of reactive gas injection and sputter erosion is shifted towards erosion in the race track. Accomplished computer simulations of the reactive sputtering process are similar to Berg's well known model. Though based on experimental findings the algorithm was extended to an analytical two layer model which includes the adsorption of reactive gas as well as its different kinds of implantation. A distribution of ion current density across the target diameter is introduced, which allows a more detailed characterization of the processes at the surface. Experimental results and computer simulation have shown that at sufficiently low reactive gas flow, metallic and compound fractions may exist together on the target surface, which is in contradiction to previous simulations, where a homogeneous reactive gas coverage is assumed. Based on the results the dominant mechanisms of nitrogen incorporation at different target locations and at varying reactive gas admixture were identified.
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Rasch, Joel. "Probe measurements in a pulsed high power sputtering magnetron." Thesis, KTH, Rymd- och plasmafysik, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-91546.
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Santos, Claudiosir Roque dos. "Deposição de nano-camadas de VO2 por Magnetron Sputtering." Universidade Federal de Santa Maria, 2007. http://repositorio.ufsm.br/handle/1/9264.
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The vanadium dioxide (VO2) shows a metal-insulator transition (MIT) near the room temperature with huge changes in its electrical and optical behavior. Both the
electrical and optic properties, and even the transition temperature, depend on the morphologic characteristics of the metal. In this work, vanadium oxide nanolayers were deposited onto glass substrate by reactive magnetron sputtering. The aim was to obtain the best deposition parameters, like substrate temperature (Ts) and oxygen
partial pressure (PO2), for the VO2M1 phase synthesis. Samples deposited with oxygen partial pressures ranging from 10 to 20% of the total pressure, and Ts=400°C, have shown metal insulator transition when submitted to a 550°C ex-situ
thermal treatment. The analysis of the x-ray diffraction spectra has shown that all the samples were formed simultaneously by more than one phase of vanadium oxides.
Moreover, we identify a reciprocal correspondence between the 2q = 27,8° peak, corresponding to (011) plan in VO2M1, and the MIT transition. The measured resistance in samples with VO2M1, in the temperature range of 25 to 100°C, showed
variations of almost three orders of magnitude. The transition critical temperature took place between 59 and 82°C and the hysteresis loops width ranged between 9 and 13°CO dióxido de Vanádio (VO2) apresenta uma transição metal isolante (MIT) próxima da temperatura ambiente com uma grande variação em suas propriedades elétricas e ópticas. Tanto as propriedades elétricas e ópticas quanto a própria temperatura de transição dependem das características morfológicas do material. Neste trabalho, nano-camadas de óxido de Vanádio foram produzidas sobre substratos de vidro pela técnica de magnetron sputtering reativo, visando determinar os parâmetros de deposição, em especial a temperatura do substrato (Ts) e pressão parcial de Oxigênio (PO2), adequadas para a obtenção da fase VO2M1. Amostras depositadas com pressões parciais de Oxigênio entre 10 e 20% da pressão total e Ts=400°C apresentaram MIT quando submetidas a tratamentos térmicos ex-situ a 550°C. A análise dos espectros de difração de raios-x mostrou que houve formação de mais de uma fase simultaneamente em todas as amostras, no entanto há uma correspondência recíproca entre o pico de difração de raios-x em 2q = 27,8° , correspondente ao plano (011) do VO2M1, e a transição MIT na resistividade. As medidas de resistência em função da temperatura, realizadas entre 25 e 100°C, mostraram, nas amostras com VO2M1, transição com variação na resistência em até três ordens de grandeza com temperaturas críticas entre 59 e 82°C e curvas de histerese com larguras entre 9 e 13°C
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Trinh, David Huy. "Nanocrystalline Alumina-Zirconia Thin Films Grown by Magnetron Sputtering." Doctoral thesis, Linköping : Department of Physics, Chemistry and Biology, Linköpings universitet, 2008. http://www.bibl.liu.se/liupubl/disp/disp2008/tek1153s.pdf.
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Aiempanakit, Montri. "Reactive High Power Impulse Magnetron Sputtering of Metal Oxides." Doctoral thesis, Linköpings universitet, Plasma och beläggningsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91259.
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The work presented in this thesis deals with reactive magnetron sputtering processes of metal oxides with a prime focus on high power impulse magnetron sputtering (HiPIMS). The aim of the research is to contribute towards understanding of the fundamental mechanisms governing a reactive HiPIMS process and to investigate their implications on the film growth. The stabilization of the HiPIMS process at the transition zone between the metal and compound modes of Al-O and Ce-O was investigated for realizing the film deposition with improved properties and higher depositionrate and the results are compared with direct current magnetron sputtering (DCMS) processes. The investigations were made for different sputtering conditions obtained by varying pulse frequency, peak power and pumping speed. For the experimental conditions employed, it was found that reactive HiPIMS can eliminate/suppress the hysteresis effect for a range of frequency, leading to a stable deposition process with a high deposition rate. The hysteresis was found to be eliminated for Al-O while for Ce-O, it was not eliminated but suppressed as compared to the DCMS. The behavior of elimination/suppression of the hysteresis may be influenced by high erosion rate during the pulse, limited target oxidation between the pulses and gas rarefaction effects in front of the target. Similar investigations were made for Ti-O employing a larger target and the hysteresis was found to be suppressed as compared to the respective DCMS, but not eliminated. It was shown that the effect of gas rarefaction is a powerful mechanism for preventing oxide formation upon the target surface. The impact of this effect depends on the off-time between the pulses. Longer off-times reduce the influence of gas rarefaction. To gain a better understanding of the discharge current-voltage behavior in a reactive HiPIMS process of metal oxides, the ion compositions and ion energy distributions were measured for Al-O and Ti-O using time averaged and time-resolved mass spectrometry. It was shown that the different discharge current behavior between non-reactive and reactive modes couldn’t be explained solely by the change in the secondary electron emission yield from the sputtering target. The high fluxes of O1+ ions contribute substantially to the discharge current giving rise to an increase in the discharge current in the oxide mode as compared to the metal mode. The results also show that the source of oxygen in the discharge is both, the target surface (via sputtering) as well as the gas phase. The investigations on the properties of HiPIMS grown films were made by synthesizing metal oxide thin films using Al-O, Ti-O and Ag-Cu-O. It was shown that Al2O3 films grown under optimum condition using reactive HiPIMS exhibit superior properties as compared to DCMS. The HiPIMS grown films exhibit higher refractive index as well as the deposition rate of the film growth was higher under the same operating conditions. The effect of HiPIMS peak power on TiO2 film properties was investigated and the results are compared with the DCMS. The properties of TiO2 films such as refractive index, film density and phase structure were experimentally determined. The ion composition during film growth was investigated and an explanation on the correlation of the film properties and ion energy was made. It was found that energetic and ionized sputtered flux in reactive HiPIMS can be used to tailor the phase formation of the TiO2 films with high peak powers facilitating the rutile phase while the anatase phase can be obtained using low peak powers. These phases can be obtained at room temperature without external substrate heating or post-deposition annealing which is in contrast to the reactive DCMS where both, anatase and rutile phases of TiO2 are obtained at either elevated growth temperatures or by employing post deposition annealing. The effect of HiPIMS peak power on the crystal structure of the grown films was also investigated for ternary compound, Ag-Cu-O, for which films were synthesized using reactive HiPIMS as well as reactive DCMS. It was found that the stoichiometric Ag2Cu2O3 can be synthesized by all examined pulsing peak powers. The oxygen gas flow rate required to form stoichiometric films is proportional to the pulsing peak power in HiPIMS. DCMS required low oxygen gas flow to synthesis the stoichiometric films. The HiPIMS grown films exhibit more pronounced crystalline structure as compared to the films grown using DCMS. This is likely an effect of highly ionized depositing flux which facilitates an intense ion bombardment during the film growth using HiPIMS. Our results indicate that Ag2Cu2O3film formation is very sensitive to the ion bombardment on the substrate as well as to the backattraction of metal and oxygen ions to the target.
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Nygren, Kristian. "Magnetron Sputtering of Nanocomposite Carbide Coatings for Electrical Contacts." Doctoral thesis, Uppsala universitet, Oorganisk kemi, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-302063.
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Today’s electronic society relies on the functionality of electrical contacts. To achieve good contact properties, surface coatings are normally applied. Such coatings should ideally fulfill a combination of different properties, like high electrical conductivity, high corrosion resistance, high wear resistance and low cost. A common coating strategy is to use noble metals since these do not form insulating surface oxides. However, such coatings are expensive, have poor wear resistance and they are often applied by electroplating, which poses environmental and human health hazards. In this thesis, nanocomposite carbide-based coatings were studied and the aim was to evaluate if they could exhibit properties that were suitable for electrical contacts. Coatings in the Cr-C, Cr-C-Ag and Nb-C systems were deposited by magnetron sputtering using research-based equipment as well as industrial-based equipment designed for high-volume production. To achieve the aim, the microstructure and composition of the coatings were characterized, whereas mechanical, tribological, electrical, electrochemical and optical properties were evaluated. A method to optically measure the amount of carbon was developed. In the Cr-C system, a variety of deposition conditions were explored and amorphous carbide/amorphous carbon (a-C) nanocomposite coatings could be obtained at substrate temperatures up to 500 °C. The amount of a-C was highly dependent on the total carbon content. By co-sputtering with Ag, coatings comprising an amorphous carbide/carbon matrix, with embedded Ag nanoclusters, were obtained. Large numbers of Ag nanoparticles were also found on the surfaces. In the Nb-C system, nanocrystalline carbide/a-C coatings could be deposited. It was found that the nanocomposite coatings formed very thin passive films, consisting of both oxide and a-C. The Cr-C coatings exhibited low hardness and low-friction properties. In electrochemical experiments, the Cr-C coatings exhibited high oxidation resistance. For the Cr-C-Ag coatings, the Ag nanoparticles oxidized at much lower potentials than bulk Ag. Overall, electrical contact resistances for optimized samples were close to noble metal references at low contact load. Thus, the studied coatings were found to have properties that make them suitable for electrical contact applications.
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Guimarães, Monica Costa Rodrigues. "Deposição e caracterização de filmes finos de CrN depositados por diferentes processos de magnetron sputtering." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/18/18158/tde-17112017-104317/.
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O PVD (Physical Vapor Deposition- Deposição física na fase de vapor) é um meio utilizado para a produção de recobrimentos e empregado em grande escala industrial. É um processo de deposição atômica no qual o material é vaporizado de alvo sólido por sputtering e posteriormente condensado sobre a peça a ser revestida na forma de filme. O processo ocorre em uma câmara de vácuo, na presença de plasma, e por diferença de potencial os íons, na forma pura ou combinados com átomos de hidrogênio ou carbono, são movidos para a superfície do substrato. Uma técnica relativamente nova de sputtering é o HiPIMS (High Power Impulse Magnetron Sputtering) que utiliza impulsos de energia extremamente altas com densidade de potência possibilitando filmes com melhores performances e mais densos. No presente trabalho filmes de nitreto de cromo (CrN) foram depositados por duas técnicas de magnetron sputtering, HiPIMS e DCMS (Direct Current Magnetron Sputtering), variando frequência de pulso em 400 Hz, 450 Hz e 500 Hz para o HiPIMS e a tensão de polarização em 0 V, -20 V, -40V, -60V, - 100 V e -140 V para os dois processos. Foram obtidos filmes com maior dureza, menor rugosidade para HiPIMS, no entanto DCMS apresentou maior taxa de deposição. O aumento da frequência nos filmes HiPIMS, assim como o aumento da tensão de polarização negativa possibilitaram filmes com morfologia mais densa e homogênea. Este fato também foi observado com o aumento do valor de bias nos filmes depositados por DCMS. Os valores de dureza obtidos (17 ± 2 para DCMS e 26 ± 1 para HiPIMS) são superiores aos reportados na literatura e podem estar relacionados ao efeito de \"multicamadas\" obtido pela oscilação do substrato.PVD (Physical Vapor Deposition) is a process used for coatings deposition and it is used on a large industrial scale. It is an atomic deposition process in which the material is vaporized from solid target by sputtering and then condensed onto the part to be coated in film form. The process occurs in a vacuum chamber in the presence of plasma, and by potential difference the ions in pure form or combined with hydrogen or carbon atoms are moved to the surface of the substrate. A relatively new sputtering technique is the HiPIMS (High Power Impulse Magnetron Sputtering) which uses extremely high energy pulses with power density to enable higher performance and denser films. In the present work, chromium nitride (CrN) films were deposited by two magnetron sputtering techniques, HiPIMS and DCMS (Direct Current Magnetron Sputtering), varying the pulse frequency at 400 Hz, 450 Hz and 500 Hz for the HiPIMS and the bias at 0 V, -20 V, -40 V, -60 V, -100 V and -140 V for both processes. It was obtained films with high hardness, less roughness for HiPIMS, however DCMS presented a higher rate of deposition. The increase of the frequency in the HiPIMS films, as well as the increase of the negative polarization voltage, allowed films with denser and homogeneous morphology. This fact was also observed with the increase of the value in the films deposited by DCMS. The hardness values obtained (17 ± 2 for DCMS and 26 ± 1 for HiPIMS) were higher than those reported in the literature and may be related to the \"multilayer\" effect obtained by substrate oscillation.
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Johansson, Viktor. "Off-normal Film Growth by High Power Impulse Magnetron Sputtering." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71315.
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In this study we contribute towards establishing the process-microstructure relationships in thin films grown off-normally by ionized physical vapor deposition. High power impulse magnetron sputtering (HiPIMS) is used at various peak target powers and deposition rates to grow copper (Cu) and chromium (Cr) films from a cathode placed at an angle 90 degrees with respect to the substrate normal. Films are also deposited by direct current magnetron sputtering (DCMS), for reference. Scanning electron microscopy is employed to investigate column tilting and deposition rate while X-ray diffraction techniques are utilized to study crystal structure and grain tilting. It is demonstrated that the columnar structure of Cu tilts less with respect to the substrate normal as the peak target power increases, which has been shown to correspond to a higher ionization degree of the sputtered material [1]. One explanation for this is that the trajectories of the ions are deflected towards the substrate and therefore deposited closer to the normal, as has been suggested in the literature (see e.g. [2]). Energetic bombardment by ions might also increase surface mobility, which further raises the columns. It is also concluded that the change in tilting is not caused by a lower deposition rate obtained when employing HiPIMS. The same is not seen for Cr, where all deposited films exhibit the same tilting angle. When the column tilting of Cu and Cr is compared a large difference is observed, where the columns of Cr are closer to the substrate normal. The reasons for this difference are discussed in light of nucleation and growth characteristics in the two materials. X-ray diffraction analysis reveals that Cu films exhibit an (111) fiber texture. Comparison of films grown by DCMS and HiPIMS shows that in the HiPIMS cases the grains are closer to the surface normal and better oriented with each other. In the case of Cr both DCMS and HiPIMS grown films are (110) biaxially aligned.
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Souza, Paloma Boeck. "Crescimento de filmes finos de NbN por magnetron sputtering reativo." Universidade Federal de Santa Maria, 2013. http://repositorio.ufsm.br/handle/1/9229.
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Conselho Nacional de Desenvolvimento Científico e TecnológicoIn the last decades, several applications of niobium nitride thin films has been proposed or effectively implemented. In the cubic δ − NbN phase, the bulk material presents a Tc for the superconducting transition near 17 K, what is far larger than those found in other normal (BCS) superconductors and useful in, for example, Josephson tunnel junctions. More recently, other phases have been also focus of interest, like the hexagonal δ-NbN phase. The hardness and resistance to chemical corrosion make this material well fitted for mechanically improved surface. Thin film preparation or deposition of niobium nitrides by physical methods (PVD) is not a trivial task. Stoichiometry, crystal structure and morphology of the resulting films are strongly affected by the deposition conditions, and even a qualitative model for the growth mechanisms of niobioum nitride is still lacking. In this work we have studied the effect of some parameters on the structural and morphologic properties of NbN thin films. The samples have been produced by reactive magnetron sputtering for different nitrogen partial pressures, substrate temperatures, bias voltages and deposition times. The crystallographic structure, preferred orientations, grain sizes and surface roughness were stablished by XR diffraction and, for some samples, atomic force microscopy. The results have shown that without bias voltage cubic NbN thin films are obtained, with or without substrate heating, when the partial pressure of N2 in the reactive atmosphere is between 13 and 25 %. Films produced with 17 % N2 are preferentially oriented in the <200> direction and this texture is enhanced by substrate heating. The analysis of the results in two samples with different thickness clearly indicates that for cubib NbN, the growth is remarkable different in the <111> and <200> directions. A possible mechanism to explain this difference is presented. The main effect of the voltage bias was to induce a hexagonal δ - NbN structure even for voltages as low as -10 V. These films present larger densities values than those found in the films with cubic phase, being the highest density achieved with -70V bias. All samples deposited with bias present a compressive stress and small grain size. The connections between stress, grain size and density are presented and discussed. In summary, we have identified a group of key parameters that makes possible the deposition of NbN thin films by reactive magnetron sputtering, either for superconductivity or tribological applications.
Nas últimas décadas, têm sido propostas e implementadas muitas aplicações para filmes finos de nitreto de nióbio. Na fase cúbica δ − NbN, o material na sua forma bulk apresenta Tc de transição supercondutora próxima a 17 K, o qual é de longe muito maior do que os valores encontrados para outros supercondutores normais (BCS). E, proveitoso, por exemplo, para junções túnel Josephson. Mais recentemente, outras fases também têm sido foco de interesse, como a hexagonal δ0 − NbN. A dureza e resistência à corrosão química fazem deste material bem equipado para melhoramento mecânico de superfícies. A preparação de filmes finos de nitretos de nióbio por PVD não é uma tarefa trivial. Estequiometria, estrutura cristalina e morfologia dos filmes resultantes são fortemente afetadas pelas condições de deposição. E, mesmo um modelo qualitativo para os mecanismos de crescimento do nitreto de nióbio ainda está faltando. Neste trabalho estudamos o efeito de alguns parâmetros sobre as propriedades estruturais e morfológicas de filmes finos de NbN. As amostras foram produzidas por magnetron sputtering reativo com diferentes pressões parciais de nitrogênio, temperaturas do substrato, voltagem bias e tempos de deposição. Os resultados mostraram que sem bias aplicado são obtidos filmes finos de NbN na fase cúbica, com ou sem aquecimento do substrato, quando a pressão parcial de N2 na atmosfera reativa está entre 13 e 25%. Filmes produzidos com 17% de N2 estão preferencialmente orientados na direção (200) e sua textura é aumentada por aquecimento do substrato. A análise dos resultados em duas amostras com diferentes espessuras indicou claramente que, para NbN cúbico, o crescimento é notavelmente diferente nas direções (111) e (200). Um possível mecanismo capaz de explicar esta diferença é proposto neste trabalho. O efeito significativo da aplicação do bias foi induzir a estrutura hexagonal δ − NbN mesmo para voltagens pequenas como -10 V. Estes filmes apresentam valores de densidade maiores do que para os filmes com fase cúbica, sendo a maior densidade alcançada para -70 V de bias. Todas amostras depositadas com aplicação de bias apresentaram estresse compressivo e tamanho de grãos pequeno. As conexões entre estresse, tamanho de grão e densidade são apresentados e discutidos. Em resumo, identificamos um grupo de parâmetros chave que tornam possível a deposição de filmes finos de NbN por magnetron sputtering reativo, seja para supercondutividade seja para aplicações tribológicas.
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Almeida, Manoela Adams de. "Avaliação do "magnetron sputtering" como técnica para obtenção de MgB2." Universidade Federal de Santa Maria, 2014. http://repositorio.ufsm.br/handle/1/9254.
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Conselho Nacional de Desenvolvimento Científico e TecnológicoIn this work a survey of the potentialities and limitations of magnetron sputtering as a tool for the production of MgB2 superconductors thin films has been made. Instead of the usual approaches, like co-deposition onto heated substract or room temperature deposition of MgB multilayers for ex situ annealing, the direct deposition of multilayers onto heated substract has been tested. The samples have been deposited onto Si waffers from Mg and B targets. They have been produced by the alternated grown of Mg and B layers, holding the substrate temperatur at 200 and 300 C during the depostion. Pos deposition annealings were performed at temperatures rangingo from 560 up to 800. In order to improve the sticking coefficient of Mg atoms at the substrate, the ayers thicknesses were held under ten monoatomic layers. The composition and structural properties were determined by X-Ray diffraction. The results have shown that, for the used temperatures, the Mg sticking coefficient onto B is just relevant ultil the second or third Mg monoatomic layer is completed. From this point, all Mg atoms impinging the substrate are re-emmitted to the chamber atmospherre. As a consequence, the direct production of MgB2 from the sucessive deposition of B and Mg are not effective, unless the layers thicknesses do not surpass a few tenths of nanometers.
Neste trabalho foram avaliadas as potencialidades e as limitações do "magnetron sputtering" como técnica de deposição de filmes finos de MgB2 supercondutores. No lugar das técnicas tradicionais, como a co-deposição em substrato aquecido ou a deposição de multicamadas para tratamentos térmicos ex-situ, foi testada a rotina de deposição de multicamadas diretamente sobre alvo aquecido, "in situ". As amostras foram depositadas sobre substratos de Si a partir de alvos de Mg e B. Elas foram obtidas pela deposição sucessiva e alternada de camadas de Magnésio e Boro, com temperaturas do substrato (in-situ) de 260oC e 300oC e ex-situ entre 560 e 800oC. Para aumentar a chance de fixação dos átomos de Mg no substrato já durante a deposição, as espessuras das camadas foram mantidas finas, com menos de uma dezena de planos atômicos. A composição e as propriedades estruturais das amostras produzidas foram analisadas a partir de difração de Raios-X. Os resultados obtidos mostram que, na faixa de temperatura usada, o coeficiente de fixação do Mg sobre o B é significativo apenas até que a segunda ou terceira camadas atômicas sejam concluídas. A partir deste ponto, todo o magnésio que atinge o substrato é re-emitido. Como consequência, a obtenção de MgB2 por sputtering na forma de multicamadas não é viável, pelo menos para espessuras maiores que décimos de nanometros.
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Zhao, Shuxi. "Spectrally Selective Solar Absorbing Coatings Prepared by dc Magnetron Sputtering." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7530.
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Liu, Zhibin. "Novel low friction titanium nitride coatings by pulsed magnetron sputtering." Thesis, University of Salford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490222.
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Titanium nitride coatings, because of their high hardness, resistance to corrosion and wear and gold-like appearance, are widely used in industrial applications ranging from coating of decorative items to protection of cutting and forming tools against wear and corrosion. Because of their excellent tribological properties especially their suitability in cutting, abrasive and erosive wear application, titanium nitride coatings have attracted considerable research. The suitability of TiN coatings as excellent tribological coatings is explained by their high hardness, good adhesion to steel substrate and chemical stability. However, there is one critical shortcoming which affects the use of TiN coatings in commercial products. It is that TiN coatings show high friction coefficients against some counterfaces.
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Kelly, Peter James. "Characterization studies of a closed-field unbalanced magnetron sputtering system." Thesis, University of Salford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360459.
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Dane, Andrew E. (Andrew Edward). "Reactive DC magnetron sputtering of ultrathin superconducting niobium nitride films." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/97257.
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Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references.
DC reactive magnetron sputtering was used to deposit few-nanometer-thick films of niobium nitride for fabrication of superconducting devices. Over 1000 samples were deposited on a variety of substrates, under various chamber conditions. Sheet resistance, thickness and superconducting critical temperature were measured for a large number of samples. Film Tc was improved by changing the way the samples were heated during the deposition, by ex situ rapid thermal processing, and in some cases by the addition of an RF bias to the substrate holder during the sputter deposition. These improvements to the deposition of NbN have enabled the production of superconducting nanowire single photon detectors whose quantum efficiency saturates and was the starting point for work on the superconductor-insulator transition.
by Andrew E. Dane.
S.M. in Electrical Engineering
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Book, Martin. "Magnetron sputtering of highly transparent p-conductive NiO thin films." Thesis, Uppsala universitet, Solcellsteknik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-423322.
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P-type transparent conductors are needed for a wide range of applicationssuch as solar cells and electrochromic smart windows. Solar power is animportant form of energy in today’s society as the threat of global warmingpushes the world towards fossil free energy. Hence a lot of solar cell typeshave been developed, among them tandem cells which are to different typesof solar cells stacked on top of each other. If one of the cells is based ona perovskite, a transparent p-type thin film electrode is needed as a holeconductor and electron blocking layer between the two cells. Nickel oxide(NiO) is a good candidate for this application as it has desired propertiessuch as good hole conduction, a high band gap and a matching work functionto the perovskite. The transmittance of as deposited NiO films by reactivemagnetron sputtered is limited so post deposition annealing is used to increasethe transmittance. This is not possible in this solar cell application as parts ofthe solar cell stack is temperature sensitive.Electrochromic smart windows contain a layer that can change its opticalproperties with the application of a voltage. Such windows are used inbuildings to increase energy efficiency and they contain an electrochromicdevice where NiO is used as an electrode as it has electrochromic properties,but just like with the solar cells, the transmittance of NiO is limited. Thisstudy investigates whether it is possible to make as deposited NiO by reactivemagnetron sputtering transparent, eliminating the need for post depositionannealing. Such a deposition process was found using different sputtermachines with the process point on the edge between metal and oxide modein terms of oxygen flow. This resulted in highly transparent and highlyresistive NiO films with a much higher deposition rate than in oxide mode.
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Lorenzzi, Jean Carlos da Conceição. "Boron nitride thin films deposited by magnetron sputtering on Si3N4." Master's thesis, Universidade de Aveiro, 2007. http://hdl.handle.net/10773/2307.
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Mestrado em Ciência e Engenharia de MateriaisO Nitreto de boro é um material polimorfo, sendo as fases hexagonal (h-BN) ecúbicas (c-BN) as predominantes. A fase hexagonal do nitreto de boro apresenta uma estrutura em camadas sp2, semelhante a grafite, enquanto que a fase cúbica do nitreto de boro tem forte ligações sp3, como o diamante. O h- BN apresenta boas propriedades dieléctricas, é um material refractário, resistente a corrosão, é conhecido por ser um lubrificante sólido que tem aplicações na protecção de moldes de injecção e em outros processos mecânicos de elevadas temperaturas ou lubrificação em ambientes de elevada humidade. Contudo, o h-BN é extremamente macio. Em contraste, o c-BN apresenta excelentes propriedades térmicas, eléctricas e ópticas, sendo ainda um dos materiais conhecidos com dureza mais elevada (70 GPa). Além disso, c-BN apresenta propriedades superiores em relação ao diamante quando aplicado em ferramentas de corte na maquinagem de materiais ferrosos, devido a sua alta estabilidade química a altas temperaturas durante a maquinagem. Essa combinação de propriedades faz dele um forte candidato no campo das ferramentas de corte e em dipositivos electrónicos. No presente trabalho, filmes finos de nitreto de boro foram depositados por DC e RF magnetron sputtering, utilizando alvos de B4C e h-BN prensados a quente, numa atmosfera de deposição contituída por misturas de Ar e N2. Os filmes finos de BN foram depositados simultâneamente em dois tipos de substratos: cerâmicos de Si3N4 com diferentes acabamentos superficiais e em discos de Si(100). A influência dos parâmetros de deposição, tais como a temperatura do substrato, composição da atmosfera de deposição na espessura dos filmes, taxa de deposição, cristalinidade, tensão residual, fases presentes e dureza, foram sistematicamente investigados usando técnicas como, SEM, XRD, FT-IR e nanodureza. O h-BN foi a principal fase observada nas análises dos espectros de FT-IR e nos difractogramas de XRD. O estado de tensão dos filmes finos de BN films é estremamente afectado pela temperatura do substrato, composição do gás de trabalho e pelo acabamento superficial dos substratos. O estudo da influência da temperatura mostraram que a taxa de deposição aumenta com o aumento da temperatura do substrato. Tensões residuais elevadas ocorrem para altas concentrações de árgon e para substratos polidos em suspensão de diamante 15 μm. Nos espectros de FT-IR, a forma das bandas de vibração variam de uma forma alargada para uma configuração estreita, correspondendo a uma menor desordem da fase hexagonal do BN, devido a variação da composição da atmosfera de deposição. Os valores de dureza obtidos estão numa faixa que vai desde os valores do h-BN macio (6 GPa) até valores próximos dos limites encontrados para filmes contendo a fase cúbica (16 GPa ), acima de 40%. ABSTRACT: Boron nitride is a polymorphic material, the hexagonal (h-BN) and the cubic (c- BN) being its main crystalline structure. The hexagonal boron nitride has a layered sp2-bonded structure, similar to graphite, while the cubic boron nitride has a hard sp3-bonded diamond-like structure. h-BN presents good dielectric properties, refractoriness, corrosion-resistant characteristics, low friction and low wear rate, and it is a well-known solid lubricant which has wide applications in metal-forming dies and other metal working processes at high temperatures or lubrication in high relative humidity environments. However, h-BN is mechanically soft. In contrast, c-BN presents excellent thermal, electrical and optical properties, with a hardness up to 70 GPa. Moreover, c-BN is superior to diamond as cutting tool for ferrous materials due to its high thermal chemical stability during machining. In the present work, thin films of boron nitride have been deposited by D.C. and R.F. magnetron sputtering from hot-pressed B4C and h-BN targets, using mixtures of Ar and N2, as working gases. The BN thin films were deposited simultaneously on two different substrates: Si3N4 ceramics with different surface finishing and Si(100) wafers. The influence of parameters such as substrate temperature and working gas composition ratio, on film thickness, deposition rate, cristallinity, residual stress, phase composition and hardness, were systematically investigated using techniques like SEM, XRD, FT-IR and nanohardness. h-BN was the main observed phase. The stress-state of the thin BN films is largely affected by the substrate temperature, working gas composition and the substrate surface finishing. The substrate temperature studies show that the deposition rate increases with an increasing of the substrate temperature. Large high residual stresses are developed for higher argon ratios and for substrate finishing with 15 μm diamond paste. In the FT-IR spectra, the shape of the vibration band changes from broad to narrow, corresponding to a less disorder h-BN phase, due to the working gas composition. The hardness values obtained are typical in the range of a soft h-BN (6 GPa) to values approaching the limit of the range reported for films containing a fraction of cubic phase (16 GPa ) up to 40%.
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Axelsson, Mathias. "Transparent conductive oxides deposited by magnetron sputtering: synthesis and characterization." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-390150.
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The thesis has dealt with transparent conducting oxide (TCO) materials, with a focus on Al:ZnO and with studies on Sn:In2O3 and ZnO. TCOs are a material group that is used for its properties of being conductive and at the same time transparent. In solar cells, a top layer of TCO is often used to allow light to transmit into the cell and then conduct the resulting current. A set of growth parameters was chosen and optimized through a literature study and experiments. The depositied thin films were characterized by optical and electrical characterization methods. Rf-magnetron-sputtering was used as the deposition method, where the influence of O2, argon and substrate temperature were the parameters to be studied. As a part of the characterization a model for spectroscopic ellipsometry on Al:ZnO was made, enabling faster measurement of transport properties. The main parameter affecting the TCO properties was found to be oxygen flow and the optimum flow value for each material has been determined. Substrate heating did not show any significant improvement on the resistivity of Al:ZnO with a minimum value of ~5.0*10-4 Ωcm while no heating resulted in a value of ~6.0*10-4 Ωcm. These values are comparable to the state-of-the-art from the literature. As a demonstration of application, the developed AZO and ZnO were applied to CIGS solar cells and these were compared to a reference. The newly developed AZO and ZnO was comparable to the reference but a lower mean fill factor indicates that improvements can be made.
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Turner, Graham Mark. "A study of sputtered atoms in a magnetron discharge." Thesis, The University of Sydney, 1990. https://hdl.handle.net/2123/26318.
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Sputter deposition is an important technology, which is widely used in the production of thin films and coatings for the manufacture of microelectronic components, the fabrication of solar selective surfaces and other optical thin films, and the production of decorative coatings. This technology is diverse in terms of the means by which deposition is performed, and the characteristics of the deposit (Bunshah 82].
Sputtering is a vacuum process in which atoms of an electrode material are ejected (i.e., sputtered) from the surface of the electrode by ion or neutral atom impact. In most sputter deposition processes, the bombarding ions are created in a de or If discharge which is maintained between the electrode and substrate surfaces. In a de discharge, the conducting electrode forms all or part of the cathode of the discharge. Semiconducting and insulating materials can be sputtered using an r discharge. "Magnetron" sputtering discharges are abnormal glow discharges, sustained by a magnetic field. The magnetic field permits operation of the discharge at low pressures, giving an enhanced rate of sputtering and minimising the loss of sputtered atoms due to collisions with atoms of the filling gas. Sputtered atoms which strike the substrate surface may "condense" on this surface to form a film or coating over the substrate. Common magnetron sputter deposition systems have a planar or cylindrical geometry.
Despite the extensive application of sputter deposition technology in industry, there is a need for a more detailed knowledge of the underlying physical mechanisms which govern the behaviour of sputtered atoms. Deposition conditions are generally determined empirically. The aim of this study is to further the understanding of the physical processes which describe the influence of the magnetron discharge on the properties of the sputtered atoms, and to relate these to the properties of the deposited films.
The work covered by this thesis is summarised here. More specific summaries of the contents of each chapter are given in the introductions at the beginning of each chapter.
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ROLIM, Ana Luiza de Souza. "Propriedades supercondutoras de filmes finos de Nb depositados por magnetron sputtering." Universidade Federal de Pernambuco, 1996. https://repositorio.ufpe.br/handle/123456789/6538.
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arquivo7695_1.pdf: 2537717 bytes, checksum: 60ca15ac8000b97ca710ead44bed4782 (MD5)
license.txt: 1748 bytes, checksum: 8a4605be74aa9ea9d79846c1fba20a33 (MD5)
Previous issue date: 1996Conselho Nacional de Desenvolvimento Científico e Tecnológico
Neste trabalho é estudado a deposição de filmes finos metálicos e refratários por magnetron sputtering utilizando-se tanto de uma fonte de como rf. Os pontos ótimos de trabalho foram determinados em função da pressão na câmara de deposição e da potência das fontes para os seguintes materiais: Nb, Ti, Mo, W e Si, obtendo assim um treinamento na utilização da máquina de deposição ao mesmo tempo que preparando-a para futuros usuários. Especial atenção é dada à deposição e caracterização de filmes finos de Nb com espessura entre 300 Å e 10000 Å. As características supercondutoras destes filmes são analisadas através de medidas de susceptibilidade ac, magnetização dc e da razão de resistência. O diagrama de fase campo magnético temperatura (H-T), obtido de seqüências de esfriamento a campo nulo (ZFC) e em campo (FC), revela uma forte dependência da linha de irreversibilidade com a espessura do filme. Em filmes mais finos a região de irreversibilidade diminui. Este efeito é atribuído a danos superficiais causados por tensões ou por defeitos
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Silva, Danilo Lopes Costa e. "Filmes finos de carbono depositados por meio da técnica de magnetron sputtering usando cobalto, cobre e níquel como buffer-layers." Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-27082015-090945/.
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Neste trabalho, foram produzidos filmes finos de carbono pela técnica de magnetron sputtering usando substratos monocristalinos de alumina com plano-c orientado em (0001) e substratos de Si (111) e Si (100), empregando Co, Ni e Cu como filmes intermediários (buffer-layers). As deposições foram conduzidas em três etapas, sendo primeiramente realizadas com buffer-layers de cobalto em substratos de alumina, onde somente após a produção de grande número de amostras, foram então realizadas as deposições usando buffer-layer de cobre em substratos de Si. Em seguida foram realizadas as deposições com buffer-layers de níquel em substratos de alumina. A cristalinidade dos filmes de carbono foi avaliada por meio da técnica de espectroscopia Raman e complementarmente por difração de raios X (DRX). A caracterização morfológica dos filmes foi feita por meio da microscopia eletrônica de varredura (MEV E FEG-SEM) e microscopia eletrônica de transmissão de alta resolução (HRTEM). Picos de DRX referentes aos filmes de carbono foram observados apenas nos resultados das amostras com buffer-layers de cobalto e de níquel. A espectroscopia Raman mostrou que os filmes de carbono com maior grau de cristalinidade foram os produzidos com substratos de Si (111) e buffers de Cu, e com substratos de alumina com buffer-layers de Ni e Co, tendo este último uma amostra com o maior grau de cristalinidade de todas as produzidas no trabalho. Foi observado que o cobalto possui menor recobrimento sobre os substratos de alumina quando comparado ao níquel. Foram realizados testes de absorção de íons de Ce pelos filmes de carbono em duas amostras e foi observado que a absorção não ocorreu devido, provavelmente, ao baixo grau de cristalinidade dos filmes de carbono em ambas amostras.In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer-layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, complementarily, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples.
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Aijaz, Asim. "Design and Characterisation of A SynchronousCo-Axuak Double Magnetron Sputtering System." Thesis, Linköping University, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-19924.
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High power impulse magnetron sputtering (HiPIMS) is a novel pulsed power technique. In HiPIMS, high power pulses are applied to the target for short duration with a low duty factor. It provides a high degree of ionization of the sputtered material (in some cases up to 90%) and a high plasma density (1019 m-3) which results in densification of the grown films. Recently a large side-transport of the sputtered material has been discovered, meaning that the sputtered material is transported radially outwards, parallel to the cathode surface. In this research, we use this effect and study the side-ways deposition of thin films. We designed a new magnetron sputtering system, consisting of two opposing magnetrons with similar polarity. Ti films were grown on Si using the side-ways transport of the sputtered material. Scanning electron microscope was employed to investigate the microstructure of the grown films. Optical emission spectroscopy (OES) measurements were made for investigating the ionized fraction of the sputtered material while Langmuir probe measurements were made for evaluating the plasma parameters such as electron density. The conclusion is that the system works well for side-ways deposition and it can be useful for coating the interior of cylindrically shaped objects. It is a promising technique that should be used in industry.
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Perry, Duncan. "Optimisation of a closed-field unbalanced magnetron sputter process : titanium aluminium nitride." Thesis, University of Salford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308219.
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Sirota, Ben. "Synthesis and Characterization of ZnO and Bi2O3 Nanowires Grown by Magnetron Sputtering." OpenSIUC, 2011. https://opensiuc.lib.siu.edu/theses/766.
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Nanowires of Zinc oxide and bismuth oxide were grown on silicon substrates using vapor-liquid-solid (VLS) and unbalanced magnetron sputtering. Characterization using x-ray diffraction (XRD) and scanning electron microscopy (SEM) was conducted to investigate how growth conditions influence the structural and morphological properties of the materials. Optical properties were investigated using photoluminescence (PL), direct absorption spectra and cyclic voltammetry. The physical properties of sputtered ZnO were found to be dependent on oxygen flow rate, temperature, and the initial foreign metal catalysis seed layer. Nanowires were grown using a two-step process whereby an initial Au layer was deposited followed by Zn with oxygen. Doped ZnO-TiO2 nanostructures were created by sputtering Ti and Zn simultaneously. Homo- and hetero-structured ZnO-ZnO and ZnO-TiO2 were created using additional sputtering cycles. A systematic approach was taken to produce nanoarrays of Bi2O3 by adjusting initial seed layer thickness and oxygen flow rates. A two step process involving variable oxygen flow rates was found to create the highest density of Bi2O3 nanowires in the array. Top-view and cross-sectional SEM micrographs suggested that the resulting Bi2O3 nanowires were approximately 300 nm in length with diameters of 100 nm at the base and 30 nm at the top. Investigation into the growth method suggests a self-catalytic VLS-like process. Degradation tests using rhodamine 6G dye were compared to SEM images. Samples of ZnO and Bi2O3 displayed a direct correlation between nanowire density and photocatalytic efficiency.
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Gou, Zhenhui. "Aluminium oxynitride thin films by reactive magnetron sputtering and their applications." Thesis, University of the West of Scotland, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.311793.
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Santos, Ikaro Arthur Dantas. "Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering." Pós-Graduação em Ciência e Engenharia de Materiais, 2018. http://ri.ufs.br/jspui/handle/riufs/10595.
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Conselho Nacional de Pesquisa e Desenvolvimento Científico e Tecnológico - CNPqZr-Hf-N and Zr-Hf thin films were deposited by reactive magnetron sputtering in order to verify the influence of small hafnium contents that are present as contaminants on zirconium deposition targets. For this purpose different hafnium contents in the films were intentionally added by varying the deposition power. The samples were characterized by X-ray diffraction (XRD), dispersive energy X-ray spectroscopy (EDS), Rutherford backscattering spectroscopy (RBS) and nanohardness analyzes. The ZrHfN thin films were deposited and had a concentration of at% Hf of 0.49; 0.56; 0.80; 1.87 and 2.70. The deposited Zr-Hf alloys exhibited hafnium contents at up to 1.21%; 1.24; 4.35; 7.94 and 11.49. The crystalline phase obtained for the nitride films had a cubic face centered structure (FCC) and was not modified by the increase in hafnium content. The alloys presented amorphous with some crystalline regions of hexagonal structure. The hardness values ranged from 21.4 to 25.1 GPa for nitrides and from 6.1 to 8.4 GPa for zirconium alloys.
Filmes finos de Zr-Hf-N e Zr-Hf foram depositados por magnetron sputtering reativo com o intuito de verificar a influência de pequenos teores de háfnio que estão presentes como contaminantes nos alvos de deposição de zircônio. Para isto foram adicionados intencionalmente diferentes teores de háfnio nos filmes através da variação da potência de deposição. As amostras foram caracterizadas por difração de raios-X (DRX), espectroscopia de raios-Xpor energia dispersiva (EDS), espectroscopia por retroespalhamento Rutherford (RBS) e análises de nanodureza. Os filmes finos de ZrHfN foram depositados e apresentaram concentração em at.% de Hf de 0,49; 0,56; 0,80; 1,87 e 2,70. As ligas Zr-Hf depositadas apresentaram teores de háfnio em at.% de 1,21; 1,24; 4,35; 7,94 e 11,49. A fase cristalina obtida para os filmes os nitretos tinha estrutura cúbica de face centrada (CFC) e não foi modificada pelo aumento do teor de háfnio. As ligas se apresentaram amorfas com algumas regiões cristalinas de estrutura hexagonal. Os valores de dureza variaram de 21,4 a 25,1 GPa para os nitretos e de 6,1 a 8,4 GPa para as ligas de zircônio.
São Cristóvão, SE
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Madiba, Itani Given. "Thermochromic properties of VO2 nano-coatings by inverted cylindrical magnetron sputtering." Thesis, University of the Western Cape, 2012. http://hdl.handle.net/11394/4381.
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>Magister Scientiae - MScVanadium dioxide (VO2) films have been known as the most feasible thermochromic nano-coatings for smart windows which self control the solar radiation and heat transfer for energy saving and comfort in houses and automotives. Such an attractive technological application is due to the fact that VO2 crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature TM of about 68°C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated to the nature of the microstructure, stoichiometry and some other surrounding parameters of the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of VO2 thin films synthesized by inverted cylindrical magnetron sputtering. Vanadium dioxide thin films were deposited on glass substrate, at various temperatures between 350 to 600 0C, deposition time kept constant at 1 hour. Prior the experiment, deposition conditions such as base pressure, oxygen pressure, rf power and target-substrate distance were carefully optimized for the quality of VO2 thin films. The reports results are based on AFM, XRD, RBS, ERDA and UV-VIS. The atomic force microscopy (AFM) was used to study the surface roughness of the thin films. Microstructures and orientation of grain size within the VO2 thin films were investigated by the use of X-ray diffraction technique. The stoichiometry and depth profiles of the films were all confirmed by RBS and ERDA respectively. The optical properties of VO2 were observed using the UV-Vis spectrophotometer.
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Huo, Chunqing. "Modeling and Experimental Studies of High Power Impulse Magnetron Sputtering Discharges." Doctoral thesis, KTH, Rymd- och plasmafysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-126264.
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HiPIMS, high power impulse magnetron sputtering, is a promising technology that has attracted a lot of attention, ever since it was introduced in 1999. A time-dependent plasma discharge model has been developed for the ionization region (IRM) in HiPIMS discharges. As a flexible modeling tool, it can be used to explore the temporal variations of the ionized fractions of the working gas and the sputtered vapor, the electron density and temperature, the gas rarefaction and refill processes, the heating mechanisms, and the self-sputtering process etc.. The model development has proceeded in steps. A basic version IRM I is fitted to the experimental data from a HiPIMS discharge with 100 μs long pulses and an aluminum target (Paper I). A close fit to the experimental current waveform, and values of density, temperature, gas rarefaction, as well as the degree of ionization shows the general validity of the model. An improved version, IRM II is first used for an investigation of reasons for deposition rate loss in the same discharge (Paper II). This work contains a preliminary analysis of the potential distribution and its evolution as well as the possibility of a high deposition rate window to optimize the HiPIMS discharge. IRM II is then fitted to another HiPIMS discharge with 400 μs long pulses and an aluminum target and used to investigate gas rarefaction, degree of ionization, degree of self-sputtering, and the loss in deposition rate (Paper III). The most complete version, IRM III is also applied to these 400 μs long pulse discharges but in a larger power density range, from the pulsed dcMS range 0.026 kW/up to 3.6 kW/where gas rarefaction and self-sputtering are important processes. It is in Paper IV used to study the Ohmic heating mechanism in the bulk plasma, couple to the potential distribution in the ionization region, and compare the efficiencies of different mechanisms for electron heating and their resulting relative contributions to ionization. Then, in Paper V, the particle balance and discharge characteristics on the road to self-sputtering are studied. We find that a transition to a discharge mode where self-sputtering dominates always happens early, typically one third into the rising flank of an initial current peak. It is not driven by process gas rarefaction, instead gas rarefaction develops when the discharge already is in the self-sputtering regime. The degree of self-sputtering increases with power: at low powers mainly due to an increasing probability of ionization of the sputtered material, and at high powers mainly due to an increasing self-sputter yield in the sheath. Besides this IRM modeling, the transport of charged particles has been investigated byiv measuring current distributions in HiPIMS discharges with 200 μs long pulses and a copper target (Paper VI). A description, based on three different types of current systems during the ignition, transition and steady state phase, is used to analyze the evolution of the current density distribution in the pulsed plasma. The internal current density ratio (Hall current density divided by discharge current density) is a key transport parameter. It is reported how it varies with space and time, governing the cross-B resistivity and the mobility of the charged particles. From the current ratio, the electron cross-B (Pedersen) conductivity can be obtained and used as essential input when modeling the axial electric field that was the subject of Papers II and IV, and which governs the back-attraction of ions.QC 20130830
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Hisek, Joerg. "Physical characteristics of thin film CuInSe2 prepared by DC magnetron sputtering." Thesis, University of Salford, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491038.
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This work presents investigations into the possibility of using the method of DC magnetron sputtering for the deposition of CuInSei (CIS) thin films. Two different approaches have been used for the suitability of manufacturing stoichiometric CIS layers. For both cases the target material consisted of non-stoichiometric CIS powder.
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O'Brien, Janet. "The production of porous and chemically reactive coatings by magnetron sputtering." Thesis, University of Salford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.244932.
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Wu, Hung-Sen, and 吳鴻森. "Optical Monitoring in magnetron sputtering." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/30977941563505720964.
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碩士國立中央大學
光電科學研究所
91
Magnetron Sputtering has been widely used in the process of preparing large area coating. Because of the high and steady sputtering rate and good uniformity of thin films, magnetron sputtering must be the main stream of the coating methods in the future. It is very important to control the thickness of the film. When the film thickness is under control, we can easily achieve the goal of any film design, especially DWDM thin film filters, which have severe thickness accuracy. The main subject in this study is to construct an optical monitoring system in magnetron sputtering system. Using Overshoot Turning Point Monitoring as the monitoring method, we decrease the thickness errors at modified ceased point. We can easily change monitoring wavelength in order to reduce the thickness errors. We prepare a series of film designs, including single layer film and multi-layer films. We got success in the thickness control of coating narrow band-pass filter. After experiments, we make analysis of spectrum from original design and experiment. We find out the factors, which affect the accuracy of monitoring (refractive index of thin films, substrate rotating, and steady signal).
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Huang, Shuei Ching, and 黃學經. "RF Magnetron Sputtering Calcium Fluoride on Si." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/19259890456934243086.
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Chen, Kuan-Ta, and 陳寬達. "Coating ZrWN Thinflim on SUS304 by Magnetron Sputtering." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/33994335592118471954.
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碩士龍華科技大學
機械工程系碩士班
104
Nitride film possess a high hardness, high wear resistance, low friction coefficient, excellent chemical resistance and thermal stability, etc.. It is Often coated in cutting tools, dies, heads, optical protection films, biomaterials and can effectively extend the life of the tool and die, widely used in traditional industry, machinery industry, aerospace industry, etc.. In this study, the use of reactive current (DC) magnetron sputtering, deposition of zirconium tungsten nitride (ZrWN) film on a substrate of stainless steel SUS304, zirconium and tungsten used as a target, Argon as the sputtering gas, Nitrogen as reaction gas. Application of Taguchi experimental design, an L9 (34) orthogonal array and analysis of variance was adopted, to explore the effects of sputtering parameters, parameters include: plasma etching time base (5, 10, 15 min), N2 / (N2 + Ar) flow ratio (10, 25, 40%), the deposition time (5, 10, 15 min) and the temperature of the substrate ( Room, 100, 200˚C). Experimental results show that the substrate by plasma etching treatment, and then sputter deposition ZrWN film has better surface morphology and film adhesion. In this study, the deposited ZrWN film thickness was 117 nm ~ 254 nm. Using XRD, SEM, EDS equipment to measure the microstructure and composition of the ZrWN films. Analysis ZrWN film adhesion, coefficient of friction, corrosion potential and hardness by scratch test, tribometer test, electrochemical Tafel test and nano indentation test, respectively. The Taguchi - gray relational analysis theory was adopted to get the optimal ZrWN film sputter deposition parameters. After the experimental verification of reproducibility, the ZrWN film shows the friction coefficient reduces from 0.45 to 0.35, and the corrosion potential increased from -0.201 mV to -0.072 mV, nano-indentation hardness increased from 23.7 GPa to 24.6 GPa. The results prove that the Taguchi - gray relational analysis theory really can effectively enhance the efficiency of the experiment. In addition, the HRC-DB experiment shows the deposited ZrWN film has the best adhesion (HF1 level) in this study. By scratch test display the ZrWN film critical breaking load higher than 100 N, shows there is a very good film adhesion.
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Chen, Wei-Jung, and 陳維容. "Al2O3 — Y2O3 Thin Films Prepared by Magnetron Sputtering." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/64711814950936420179.
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碩士國立東華大學
材料科學與工程學系
92
Magnetron-sputtered aluminum oxide (Al2O3), yttrium oxide (Y2O3), and mixed oxides with different Y2O3/ Al2O3 ratios have been prepared on silicon and Pt-electrode wafers for the purpose of dielectric applications. The sputtering targets are prepared by hot pressing the constituted powders at 1400-1450oC. The effects of deposition temperature for each target on the growth rate, surface morphology, and electrical properties are evaluated. The experimental results indicated Al2O3 and mixed-oxide films were amorphous, but Y2O3 films became crystalline. For the surface morphology observed by FESEM, there were island grown on deposited layer for the mixed-oxide films and the Al2O3 films deposited at low temperature of 200oC. An island-plus-layer growth mode or the Stramski-Krastranov growth mode can explain this surface morphology. All films were also observed to be pore-free. The growth rate was great than 0.1 □m/hr, but slightly changed with process temperature and target composition. For the films deposited from the 25 m % Y2O3- Al2O3 target, they displayed a higher dielectric constant, low leakage current, and slightly lower breakdown field. The pure Y2O3 films had a dielectric constant of 22 but had worse properties on loss tangent, breakdown field, and leakage current. The pure Al2O3 films had a dielectric constant of ~8, leakage current < 10-5 A/cm at an applied field of 0.8 MV/cm, and lower dielectric loss tangent. Thin films of mixed oxides perform between their constituents.
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Ferreira, Fábio Emanuel de Sousa. "Process-properties relations in deep oscillation magnetron sputtering." Doctoral thesis, 2018. http://hdl.handle.net/10316/79590.
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Tese de doutoramento em Engenharia Mecânica, na especialidade de Engenharia de Superfície, apresentada ao Departamento de Engenharia Mecânica da Faculdade de Ciências e Tecnologia da Universidade de CoimbraThis work is part of the result of the work that has been developed by the Centre for Mechanical Engineering, Materials and Processes (CEMMPRE) in the deposition of thin films by sputtering over the last two decades. Recently, a source of HIPIMS was acquired by CEMMPRE to focus on a new area of research in magnetron sputtering. Thus, the main objective of this study is to evaluate the potential of HIPIMS technology to improve the properties of the deposited films, compared with the DCMS, and/or produce films with new properties unattainable in DCMS. So the first part of this work consist of thin film deposition in increasingly complex systems. For this step were selected the depositions of thins films by DCMS which already were extensively studied, in order to allow a greater focus on HIPIMS process itself and the differences that it entails on the film properties. The four systems chosen for this step are, in increasing order of complexity: Cr, Ta, CrN and TiSiN. In this first part of the work, it was found that the shadowing effect is the dominant film formation mechanism in DCMS and that it is stronger along the substrate rotation direction, resulting in anisotropic surfaces. The DOMS process allows to overcome the shadowing effect by decreasing the strength of the shadowing effect rather than by decreasing its effectiveness, as is usually the case in magnetron sputtering when using high energetic bombardment. Thus, DOMS allows the deposition of dense films with high hardnesses and better overall quality than DCMS. The knowledge developed during the first part of this study was used in the second part to the development of a thin film with technically relevant properties compared with the state of the art. The main objective of this stage is to demonstrate the added value of the DOMS process for the development of solutions that correspond to the current and actual needs of the thin film industry. Therefore, this part of the work is focuses on a novel method of carbon layer deposition using DOMS for application in piston rings. In this work DLC coatings were deposited by DOMS in order to increase the sp3 content in DLC and thus extend their operating range to higher temperatures. Increasing substrate biasing increases the sp3/sp2 ratio in the films as is shown by UV Raman spectroscopy. Accordingly, increasing the bias voltage results in denser and smoother films with higher hardness and mass density. However, the sp3 bonds convert back to sp2 upon annealing even at 250 º C. A significantly higher amount of sp3 bonds is form in the DLC films deposited by DOMS, as compared to the DCMS ones, showing that DOMS is a promising path for the development of hard DLC films.
Este trabalho insere-se na sequência do trabalho que tem sido desenvolvido pelo Centro de Engenharia Mecânica, Materiais e Processos (CEMMPRE) na deposição de filmes finos por pulverização catódica durante as duas últimas décadas. Recentemente, foi adquirida uma fonte de HiPIMS de última geração com vista a alargar as competências do CEMMPRE a uma nova área de investigação dentro deposição catódica magnetrão. Assim, o principal objetivo deste trabalho consiste em avaliar o potencial da tecnologia HIPIMS para melhorar as propriedades dos filmes depositados, em comparação com o DCMS, e/ou produzir filmes com novas propriedades inalcançáveis em DCMS. Assim a primeira parte deste trabalho consistirá na deposição de filmes finos em sistemas de complexidade crescente. Para esta etapa foram escolhidos filmes finos cuja deposição por DCMS já esta amplamente estudada de forma permitir um maior foco no próprio processo de HIPIMS e nas diferenças que ele acarreta no que se refere às propriedades dos filmes. Os quatros sistemas escolhidos para esta etapa são, por ordem crescente de complexidade: Cr, Ta, CrN e TiSiN. Nesta primeira parte do trabalho, foi observado que o efeito de sombra é o mecanismo dominante na formação do filme por DCMS, sendo mais forte ao longo da direção de rotação do substrato, o que resulta em superfícies anisotrópicas. O processo DOMS permite superar o efeito sombra ao diminuir a força do efeito sombra ao invés de diminuir a sua eficácia, como é geralmente o caso da pulverização catódica quando usado um bombardeamento energético elevado. Assim, o processo DOMS permite a deposição de filmes densos com durezas elevadas e melhor qualidade geral do que por DCMS. O conhecimento desenvolvido durante a primeira parte deste trabalho será utilizado na segunda parte para o desenvolvimento de um filme fino com propriedades tecnologicamente relevantes comparadas com o estado da arte. O principal objetivo desta etapa consistirá em demonstrar a mais-valia do processo de HIPIMS para o desenvolvimento de soluções que correspondem a necessidades efetivas e atuais da indústria de filmes finos. Portanto, esta parte do trabalho concentra-se em um novo método de deposição de filmes de carbono usando o processo DOMS com o objetivo de serem usados em anéis de pistão. Neste trabalho, os revestimentos de DLC foram depositados por DOMS com o objetivo de aumentar o conteúdo de sp3 nos filmes de DLC e, assim, estender seu alcance de operação a temperaturas mais elevadas. Aumentar a polarização do substrato aumenta o ratio sp3/sp2 nos filmes como é demonstrado pela técnica de UV Raman. Consequentemente, o aumento da tensão de polarização resulta em filmes mais densos, com baixa rugosidade e maior dureza. No entanto, parte das ligações sp3 convertem-se outra vez em sp2 após o recozimento mesmo a 250 º C. Apesar disso, uma quantidade significativamente maior de ligações sp3 é formada nos filmes DLC depositados por DOMS, em comparação com os DCMS, mostrando que o processo DOMS revela resultados promissores para desenvolvimento de filmes DLC duros.