Relevant bibliographies by topics / Magnetron sputtering

Academic literature on the topic 'Magnetron sputtering'

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Published: 4 June 2021
Last updated: 13 July 2024

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Journal articles on the topic "Magnetron sputtering"

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Kozlova, M. V., V. N. Fateev, O. K. Alekseeva, N. A. Ivanova, V. V. Tishkin, and A. Sh Aliyev. "MAGNETRON SPUTTERING SYNTHESIS OF ELECTROCATALYSTS." Chemical Problems 22, no. 1 (2024): 7–19. http://dx.doi.org/10.32737/2221-8688-2024-1-7-19.

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Magnetron sputtering is a well-known method of obtaining various coatings and surface modifications, but nowadays it is successfully used for the synthesis of electrocatalysts. One of the main advantages of the method is the possibility to vary the parameters during the process, such as the mode (direct current sputtering, pulsed medium-frequency sputtering, high radio frequency sputtering), potential supply to the sputtered substrate or catalyst carrier, pressure in the vacuum chamber, atmosphere composition, which allows to change the composition and structure of the obtained coatings and catalysts very widely. Changing the modes of sputtering makes it possible to create both dense (porous) protective/catalytic coatings and coatings with a very developed surface, i.e. for obtaining electrode materials
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Ruano, Manuel, Lidia Martínez, and Yves Huttel. "Investigation of the Working Parameters of a Single Magnetron of a Multiple Ion Cluster Source: Determination of the Relative Influence of the Parameters on the Size and Density of Nanoparticles." Dataset Papers in Science 2013 (August 18, 2013): 1–8. http://dx.doi.org/10.1155/2013/597023.

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Multiple Ion Cluster Source (MICS) is the new optimized route of a standard technique based on a sputtering gas aggregation source, the Ion Cluster Source. The single magnetron used in the standard Ion Cluster Source is replaced by three magnetrons inside the aggregation zone, and they are controlled individually in order to fabricate nanoparticles with the desired and tunable chemical composition. Apart from the working parameters of each magnetron, it is also reported that the relation between the working parameters of individual magnetrons is of prime importance for the control of both the size and density of the nanoparticles. The influences of fluxes of the sputtering gas applied to each magnetron, the total gas flux in the aggregation zone, the position in the aggregation zone of Ag magnetron, and the relative position of the magnetrons in the aggregation zone have been studied through the operation of one of the magnetrons loaded with a silver target.
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Rossnagel, Stephen M. "Magnetron sputtering." Journal of Vacuum Science & Technology A 38, no. 6 (December 2020): 060805. http://dx.doi.org/10.1116/6.0000594.

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Swann, S. "Magnetron sputtering." Physics in Technology 19, no. 2 (March 1988): 67–75. http://dx.doi.org/10.1088/0305-4624/19/2/304.

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Gaines, J. R. "Combinatorial Magnetron Sputtering." Vakuum in Forschung und Praxis 29, no. 5 (October 2017): 26–30. http://dx.doi.org/10.1002/vipr.201700660.

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Novosyadlyj, S. P., S. I. Boyko, and M. V. Kotyk. "Features Multilevel Metallization Forming a Submicron Structures of Large Integrated Circuits." Фізика і хімія твердого тіла 17, no. 4 (December 15, 2016): 630–36. http://dx.doi.org/10.15330/pcss.17.4.630-636.

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This paper analyzesaluminum alloys that are used to form multilevel metallization in the submicron LSI/VLSI and magnetic alloys that are used for the production of magnetic disks of external storage devices with a large amount of memory. In addition characteristics of magnetron sputtering devices that can be used to form thinmetallization are given: magnetron sputtering device with a magnetic block rotated by cooling deionized water, which can significantly increase the effectiveness of sputtering; high-frequency magnetron device UMV 2,5 with magnetic system that formed on electromagnets with scanning magnetic field; magnetron sputtering device UVN MDE.P-1250-012 which can be used to form double-sided metallization; magnetron sputtering device based on URM.3.279.05 which can be used to form multilayer contact metallization.
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Yokogawa, Yoshiyuki, Taishi Morishima, Mitunori Uno, Masakazu Kurachi, Yutaka Doi, Harumi Kawaki, and Masato Hotta. "Wettability and Durability of Si-O Coatings on Zirconia Substrate by RF-Magnetron Plasma Sputtering." Key Engineering Materials 782 (October 2018): 189–94. http://dx.doi.org/10.4028/www.scientific.net/kem.782.189.

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The wettability and durability of Si-O coatings prepared on zirconia substrate using radiofrequency magnetron sputtering (rf-sputtering) was studied. XRD analysis revealed no phase transformation of zirconia before/after rf-sputtering process. XPS spectroscopy showed that as-deposited films with a SiO2configuration was formed. EDX analysis indicated that the Si/Zr ratio was high and when magnetron rf-sputtering was performed using a plasma gas Ar+5% O2, which may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate. The wear testing using pin on disc wear apparatus was performed. The wettability and durability of Si-O coatings fabricated by magnetron radiofrequency magnetron sputtering (rf-sputtering) on zirconia substrate was studied. A plasma gas Ar+5% O2may be the optimum condition of rf-sputtering to form a sustainable hydrophilic layer on zirconia substrate
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Tranca, Denis E., Arcadie Sobetkii, Radu Hristu, Stefan R. Anton, Eugeniu Vasile, Stefan G. Stanciu, Cosmin K. Banica, Efstathios Fiorentis, David Constantinescu, and George A. Stanciu. "Structural and Mechanical Properties of CrN Thin Films Deposited on Si Substrate by Using Magnetron Techniques." Coatings 13, no. 2 (January 17, 2023): 219. http://dx.doi.org/10.3390/coatings13020219.

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Chromium nitride thin films are known for their good mechanical properties. We present the characteristics of ultrathin chromium nitride films under 400 nm thickness deposited on silicon substrates by direct current and high-power impulse magnetron sputtering techniques. The methods of investigation of the CrN films were scanning electron microscopy, atomic force microscopy, and nanoindentation. Qualitative and quantitative analyses were performed using AFM and SEM images by fractal dimension, surface roughness and gray-level co-occurrence matrix methods. Our results show that using magnetron techniques, ultrathin CrN films with excellent mechanical properties were obtained, characterized by values of Young’s modulus between 140 GPa and 250 GPa for the samples obtained using high-power impulse magneton sputtering (HiPIMS) and between 240 GPa and 370 GPa for the samples obtained using direct current sputtering (DC). Stiffness measurements also reveal the excellent mechanical properties of the investigated samples, where the samples obtained using HiPIMS sputtering had stiffness values between 125 N/m and 132 N/m and the samples obtained using DC sputtering had stiffness values between 110 N/m and 119 N/m.
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Hrubantova, A., R. Hippler, H. Wulff, M. Cada, J. Olejnicek, N. Nepomniashchaia, C. A. Helm, and Z. Hubicka. "Deposition of tungsten oxide films by reactive magnetron sputtering on different substrates." Journal of Vacuum Science & Technology A 40, no. 6 (December 2022): 063402. http://dx.doi.org/10.1116/6.0002012.

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Tungsten oxide films are deposited with the help of reactive magnetron sputtering in an argon/oxygen gas mixture. Films are deposited on different substrates, in particular, on soda lime glass, fluorine-doped tin oxide coated glass, silicon (Si), and quartz ([Formula: see text]). Thin films from three different discharge modes, in particular, high power impulse magnetron sputtering, midfrequency magnetron sputtering, and radiofrequency magnetron sputtering, are compared. Deposited films are characterized by x-ray diffraction, Raman spectroscopy, and spectroscopic ellipsometry. Composition, crystal structure, and optical properties of as-deposited and annealed films are found to depend on the deposition mode and on the substrate.
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Han, Qiu Ling, Wen Yu Ye, Qiao Ling Chen, and Jian Hong Gong. "Study on the Properties of W-Al2O3 Solar Energy Selective Absorbing Coating Prepared by Magnetron Sputtering." Advanced Materials Research 893 (February 2014): 819–24. http://dx.doi.org/10.4028/www.scientific.net/amr.893.819.

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In this paper, the W-Al2O3 solar energy selective absorbing coating was prepared by magnetron sputtering. The selective absorption coating layers were obtained by setting different tungsten target sputtering power and sputtering time. The process parameters of magnetron sputtering were presented by comparing the selective absorption coating layers absorptivity and reflectivity.
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Dissertations / Theses on the topic "Magnetron sputtering"

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Marriott, Timothy. "Magnetron sputtering of bioceramics." Thesis, University of Nottingham, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.539210.

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Brookes, Marc. "Novel components by magnetron sputtering." Thesis, University of Salford, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491045.

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The advent of the closed field unbalanced magnetron sputtering (CFUBMS) technique has provided a novel method for the production of ultra thick multilayer coatings, which form free standing foils when removed from the substrate. Applications for this method range from the production of complex metal/ceramic probe tips, to an alternative route for the production of axisymmetric high precision-machined components, such as a bellows component used in the production of uranium enrichment by the sponsors of this project, Urenco (Capenhurst) Ltd. In this study the CFUBMS system was developed to grow metallic and reactive compound multilayer foils. These foils were tested for compatibility with uranium hexafluoride, UF6 , a corrosive gas used in the production of enriched uranium that is also in contact with the bellows component.
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Spencer, Alaric Graham. "High rate reactive magnetron sputtering." Thesis, Loughborough University, 1988. https://dspace.lboro.ac.uk/2134/10464.

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Glow discharge sputtering has been used for many years to produce thin films but its commercial applications are severely limited by low deposit ion rates. The DC planar magnetron, developed a decade ago, allows much higher deposition rates and its commercial use has expanded rapidly. Non-reactive magnetron sputtering of metallic thin films is well understood and utilized. However when a reactive gas is introduced the process becomes harder to control and can switch between two stable modes. Often films are produced simply by using one of these stable modes even though this does not lead to optimum film properties or high deposition rates. This work gives a model of reactive magnetron sputtering and verifies experimentally its predictions. A 0.5 m long magnetron was designed and built specifically to allow reactive sputtering onto A4 rigid substrates. This magnetron has a variable magnetic field distribution which allows plasma bombardment of the substrate during film growth. This was shown to activate reactions at the substrate. The target lifetime was extended in our design by broadening the erosion zone and increasing the target thickness. The reactive sputtering process was shown to be inherently unstable and a control system was designed to maintain the magnetron in an unstable state. Light emission by the plasma at metal line emission wavelengths changes across the instability and so with this control signal a feedback system was built. The accuracy of control was shown experimentally and theoretically to depend on the delay time between measurement, action and effect. In practice this delay was limited by the time constant of the gas distribution manifold. The time constant of such manifolds was measured and calculated. Using our controller high quality films were produced at high rates in normally unstable deposition systems. Conducting indium oxide was produced at 6 nm/s with a resistivity of 6 x 10-6 ohm. metres onto A4 glass sheets. Tin oxide was produced at increased rates onto 2.5 m by 3 m substrates.
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Eleuterio, Filho Sebastião. "Magnetron Sputtering planar construção e aplicação." [s.n.], 1991. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277105.

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Orientador: Sergio Artur Bianchini Bilac
Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-07-14T00:34:53Z (GMT). No. of bitstreams: 1 EleuterioFilho_Sebastiao_M.pdf: 3937274 bytes, checksum: 3a5a8e1cc4df74ca5071ce507ea876fa (MD5) Previous issue date: 1991
Resumo: A técnica de deposição de filmes magnetron sputtering apresenta muitas vantagens em relação à outros métodos, como por exemplo, a simplicidade do equipamento, o baixo custo de manutenção, fácil manuseio e, a possibilidade de obtenção de altas taxas de deposição. Sua utilização é hoje muito difundida em áreas como; microeletrônica, metalurgia e óptica. Foram projetados, desenvolvidos e caracterizados cátodos magnetron de corrente continua do tipo planar, circulares e retangulares. Foram também depositados e caracterizados filmes metálicos e liga metálica para comprovar o funcionamento do magnetron sistema de disposição. Os resultados foram excelentes comparados ao resultados presentes na literatura
Abstract: Magnetron sputtering, as a thin film deposition technique, shows advantage regarding other deposition methods, for example, the equipment can be relatively simple, easy handling, low maintenance cost and, make possible high rate deposition. The utilization of the technique in microelectronics, metallurgy and optics are unquestionable. Planar magnetron sources (circular and rectangular) were designed, developed and characterized. Metals and metal alloy films were deposited to confirm operation as a film deposition system. The results were excellent when compared to literature
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Huo, Chunqing. "Modeling High Power Impulse Magnetron Sputtering Discharges." Licentiate thesis, KTH, Rymd- och plasmafysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-94002.

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HiPIMS, high power impulse magnetron sputtering, is a promising technology that has attracted a lot of attention ever since its appearance. A time-dependent plasma discharge model has been developed for the ionization region in HiPIMS discharges. As a flexible modeling tool, it can be used to explore the temporal variations of the ionized fractions of the working gas and the sputtered vapor, the electron density and temperature, and the gas rarefaction and refill processes. The model development has proceeded in steps. A basic version IRM I is fitted to the experimental data from a HiPIMS discharge with 100 μs long pulses and an aluminum target. A close fit to the experimental current waveform, and values of density, temperature, gas rarefaction, as well as the degree of ionization shows the validity of the model. Then an improved version is first used for an investigation of reasons for deposition rate loss, and then fitted for another HiPIMS discharge with 400 μs long pulses and an aluminum target to investigate gas rarefaction, degree of ionization, degree of self sputtering, and the loss in deposition rate, respectively. Through these results from the model, we could analyse further the potential distribution and its evolution as well as the possibility of a high deposition rate window to optimize the HiPIMS discharge. Besides this modeling, measurements of HiPIMS discharges with 100 μs long pulses and a copper target are made and analyzed. A description, based on three different types of current systems during the ignition, transition and steady phase, is used to describe the evolution of the current density distribution in the pulsed plasma. The internal current density ratio is a key transport parameter. It is reported how it varies with space and time, governing the cross-B resistivity and the energy of the charged particles. From the current ratio the electron cross-B transport can be obtained and used as essential input when modeling the axial electric field, governing the back-attraction of ions.
QC 20120504
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Yahia, Maymon. "Development of an enhanced magnetron sputtering system." Thesis, University of Salford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490427.

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The magnetron sputtering process has become established as the process of choice for the deposition of a wide range of industrially important coatings. However, despite its successes, there are inherent limitations in the current process. The ion-to-atom ratio incident at the substrate, which has a profound effect on coating properties, cannot readily be varied using present technology. Consequently, film properties may not be optimal. The relation between the incident charge and the energy delivered to the surface is another parameter that cannot be controlled in classical magnetron sputtering systems. This in turn can lead to difficulties in controlling the reaction between reactive gases and deposited materials, controlling the surface status prior, during and after deposition, monitoring the natural growth of native oxides and their combined effect on the adhesion of the thin film and the optical and electrical properties of the coated surface.
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Böhlmark, Johan. "Fundamentals of high power impulse magnetron sputtering /." Linköping : Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.

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Böhlmark, Johan. "Fundamentals of High Power Impulse Magnetron Sputtering." Doctoral thesis, Linköpings universitet, Plasma och beläggningsfysik, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.

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In plasma assisted thin film growth, control over the energy and direction of the incoming species is desired. If the growth species are ionized this can be achieved by the use of a substrate bias or a magnetic field. Ions may be accelerated by an applied potential, whereas neutral particles may not. Thin films grown by ionized physical vapor deposition (I-PVD) have lately shown promising results regarding film structure and adhesion. High power impulse magnetron sputtering (HIPIMS) is a relatively newly developed technique, which relies on the creation of a dense plasma in front of the sputtering target to produce a large fraction of ions of the sputtered material. In HIPIMS, high power pulses with a length of ~100 μs are applied to a conventional planar magnetron. The highly energetic nature of the discharge, which involves power densities of several kW/cm2, creates a dense plasma in front of the target, which allows for a large fraction of the sputtered material to be ionized. The work presented in this thesis involves plasma analysis using electrostatic probes, optical emission spectroscopy (OES), magnetic probes, energy resolved mass spectrometry, and other fundamental observation techniques. These techniques used together are powerful plasma analysis tools, and used together give a good overview of the plasma properties is achieved. from the erosion zone of the magnetron. The peak plasma density during the active cycle of the discharge exceeds 1019 electrons/m3. The expanding plasma is reflected by the chamber wall back into the center part of the chamber, resulting in a second density peak several hundreds of μs after the pulse is turned off. Optical emission spectroscopy (OES) measurements of the plasma indicate that the degree of ionization of sputtered Ti is very high, over 90 % in the peak of the pulse. Even at relatively low applied target power (~200 W/cm2 peak power) the recorded spectrum is totally dominated by radiation from ions. The recorded HIPIMS spectra were compared to a spectrum taken from a DC magnetron discharge, showing a completely different appearance. Magnetic field measurements performed with a coil type probe show significant deformation in the magnetic field of the magnetrons during the pulse. Spatially resolved measurements show evidence of a dense azimuthally E×B drifting current. Circulating currents mainly flow within 2 away cm from the target surface in an early part of the pulse, to later diffuse axially into the chamber and decrease in intensity. We record peak current densities of the E×B drift to be of the order of 105 A/m2. A mass spectrometry (MS) study of the plasma reveals that the HIPIMS discharge contains a larger fraction of highly energetic ions as compared to the continuous DC discharge. Especially ions of the target material are more energetic. Time resolved studies show broad distributions of ion energies in the early stage of the discharge, which quickly narrows down after pulse switch-off. Ti ions with energies up to 100 eV are detected. The time average plasma contains mainly low energy Ar ions, but during the active phase of the discharge, the plasma is highly metallic. Shortly after pulse switch-on, the peak value of the Ti1+/Ar1+ ratio is over 2. The HIPIMS discharge also contains a significant amount of doubly charged ions.
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Hales, P. W. "Resistive and superconducting magnets for magnetron sputtering." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442462.

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Ja'fer, Hussein Abidjwad. "Plasma-assisted deposition using an unbalanced magnetron." Thesis, Loughborough University, 1993. https://dspace.lboro.ac.uk/2134/27734.

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It is well known that ion bombardment of growing films can strongly influence their microstructure and consequently their physical properties. The available technology for ion assisted deposition, particularly where separate sources are used for the deposition flux and the ion flux, is difficult to implement in many production situations. The planar magnetron provides a controllable ion flux while retaining the many other desirable features of simplicity, high deposition rate, geometric versatility and tolerance of reactive gases. This assists in the implementation of ion beam assisted deposition in both research and production.
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Books on the topic "Magnetron sputtering"

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H, Arenz, ed. The deposition of amorphous silicon films by the technique of magnetron sputtering. Luxembourg: Commissionof the European Communities, 1988.

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Talivaldis, Spalvins, Lewis Research Center, and United States. National Aeronautics and Space Administration. Scientific and Technical Information Division., eds. Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films. [Washington, D.C.]: National Aeronautics and Space Administration, Office of Management, Scientific and Technical Information Division, 1990.

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Parry, Michael Andrew. An investigation of neodymium iron boron thin films produced by magnetron sputtering and pulsed laser ablation. Birmingham: University of Birmingham, 2001.

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Monaghan, Dermot. High rate unbalanced magnetron sputtering of thick films of ultra-fine grained OFHC copper and copper alloys. Salford: University of Salford, 1993.

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J, Waters William, Soltis Richard, and United States. National Aeronautics and Space Administration., eds. MS212-A homogeneous sputtered solid lubricant coating for use to 800⁰C. [Washington, DC]: National Aeronautics and Space Administration, 1997.

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J, Waters William, Soltis Richard, and United States. National Aeronautics and Space Administration., eds. MS212-A homogeneous sputtered solid lubricant coating for use to 800⁰C. [Washington, DC]: National Aeronautics and Space Administration, 1997.

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J, Waters William, Soltis Richard, and United States. National Aeronautics and Space Administration., eds. MS212-A homogeneous sputtered solid lubricant coating for use to 800⁰C. [Washington, DC]: National Aeronautics and Space Administration, 1997.

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United States. National Aeronautics and Space Administration., ed. Final report to NASA Marshall Space Flight Center on the study of low temperature unbalanced magnetron deposition of hard, wear-resistant coatings for liquid-film bearing applications: Contract number NAG8-1020. [Washington, DC: National Aeronautics and Space Administration, 1996.

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Magnetron Sputtering [Working Title]. IntechOpen, 2018. http://dx.doi.org/10.5772/intechopen.74092.

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High Power Impulse Magnetron Sputtering. Elsevier, 2020. http://dx.doi.org/10.1016/c2016-0-02463-4.

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Book chapters on the topic "Magnetron sputtering"

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Juarez-Martinez, Gabriela, Alessandro Chiolerio, Paolo Allia, Martino Poggio, Christian L. Degen, Li Zhang, Bradley J. Nelson, et al. "Magnetron Sputtering." In Encyclopedia of Nanotechnology, 1275. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100376.

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Braun, Manuel. "Magnetron Sputtering Technique." In Handbook of Manufacturing Engineering and Technology, 2929–57. London: Springer London, 2014. http://dx.doi.org/10.1007/978-1-4471-4670-4_28.

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Braun, Manuel. "Magnetron Sputtering Technique." In Handbook of Manufacturing Engineering and Technology, 1–25. London: Springer London, 2013. http://dx.doi.org/10.1007/978-1-4471-4976-7_28-9.

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Szyszka, B. "Magnetron Sputtering of ZnO Films." In Transparent Conductive Zinc Oxide, 187–233. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73612-7_5.

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Ramos, Marco César Maicas, and María del Mar Sanz Lluch. "High-Flux DC Magnetron Sputtering." In Gas-Phase Synthesis of Nanoparticles, 137–54. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2017. http://dx.doi.org/10.1002/9783527698417.ch8.

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Almeida, J. B. "Magnetron Sputtering - Physics and Design." In Materials Modification by High-fluence Ion Beams, 87–92. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-1267-0_4.

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Baránková, H., L. Bárdoš, P. Cabalka, and M. Libra. "Reactive Magnetron Sputtering of ITO Layers." In Plasma Jets in the Development of New Materials Technology, 585–94. London: CRC Press, 2023. http://dx.doi.org/10.1201/9780429070938-55.

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Konstantinidis, Stephanos, F. Gaboriau, M. Gaillard, M. Hecq, and A. Ricard. "Optical Plasma Diagnostics During Reactive Magnetron Sputtering." In Reactive Sputter Deposition, 301–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-76664-3_9.

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Teixeira, Vasco. "Nanostructured Ceramic Coatings Produced by Magnetron Sputtering." In Nanostructured Materials and Coatings for Biomedical and Sensor Applications, 131–47. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0157-1_14.

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Haider, Julfikar. "MoSx Coatings by Closed-Field Magnetron Sputtering." In Encyclopedia of Tribology, 2323–33. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-0-387-92897-5_721.

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Conference papers on the topic "Magnetron sputtering"

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Glocker, David A. "AC Magnetron Sputtering." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/oic.1995.tub1.

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Sputtering has become an extremely important and widespread manufacturing process for depositing optical interference coatings. This is due to a number of factors, including the excellent control sputtering offers over deposition rates and film properties, as well as the relative ease of scaling processes to large coating systems. Today there is a very large installed manufacturing base for sputtering optical films on substrates that range in size from small individual elements to architectural glass and continuous webs of polyester. Depositing dielectric materials reproducibly and at the high rates needed for manufacturing presents interesting challenges, however.
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Goree, J., M. J. Goeckner, and T. E. Sheridan. "Sputtering magnetron experiments and modeling." In 1990 Plasma Science IEEE Conference Record - Abstracts. IEEE, 1990. http://dx.doi.org/10.1109/plasma.1990.110824.

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Allen, Robert. "An overview of Magnetron sputtering." In 3rd Annual BACUS Symposium. SPIE, 2023. http://dx.doi.org/10.1117/12.3011326.

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Wang, Mingli, and Zhengxiu Fan. "Optics coatings by magnetron sputtering deposition." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300652.

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Chandrasekaran, Ramya. "Astronomical Mirror Coating using Magnetron Sputtering." In 64th Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2021. http://dx.doi.org/10.14332/svc21.proc.0084.

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Crossette, Nate P., Thomas G. Jenkins, David N. Smithe, and John R. Cary. "Modeling Magnetron Sputtering Devices with VSIM." In 2018 IEEE International Conference on Plasma Science (ICOPS). IEEE, 2018. http://dx.doi.org/10.1109/icops35962.2018.9576049.

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Williams, F. L., H. D. Nusbaum, and B. J. Pond. "New method of arc suppression for reactive-dc-magnetron sputtering." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.fh4.

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Modulated-dc-magnetron sputtering offers a novel solution to problems associated with arcing on the surface of the sputtering target. Arcing has been identified as a main contributor to defects in thin films produced with low-pressure reactive magnetron-sputtering deposition. By biasing the target with a de potential that is modulated at ultrasonic frequencies, sputtering-target arcing is eliminated so that coatings with fewer defects are produced. In the technique presented here, the output from a de power supply is directed into a modulator circuit that switches the output according to a frequency and duty cycle set by a waveform generator. Thus, the output from the modulator is a time-varying electric potential with its most negative value equal to the output of the power supply and its minimum value equal to zero. Arcing on the sputtering target ceases when the switching frequency exceeds a certain threshold value (typically 10-30 kHz) that is dependent on the deposition parameters. Since modulated-dc-magnetron sputtering is effective at frequencies that are significantly less than the standard rf-sputtering frequency of 13.56 MHz, complications in coupling energy between the power supply and the sputtering target are avoided. Therefore, the efficiency of the sputtering process is dramatically improved compared to rf sputtering.
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Baik, Jae-Sang, and Youn-Jea Kim. "A Study on the Heat Transfer Enhancement in Magnetron Sputtering System." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32182.

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Magnetron sputtering systems have been widely used in the field of thin film technologies, such as making ultra-thin semiconductors, metal films, etc. The feature of magnetron sputtering system is used high voltage and electric current as the power of system. The energy is converted to heat which must be removed by the appropriate cooling system. Otherwise, it may damage the target, the magnets, and the substrate as well. Also, the current trend of magnetron sputtering is towards that with larger size of target, which can improve the efficiency. Consequently, heat transfer of magnetron sputtering system becomes complex and needs to develop more efficient cooling system. The main parameters affecting the cooling performance are the flow path of cooling water and flow rate. In this study, we investigated the characteristics of cooling effect with various flow paths of cooling water and flow rates. Using a commercial code, FLUENT, which uses FVM (Finite Volume Method) and SIMPLE algorithm, the governing equations have been solved for the pressure, mass flow rate, and temperature distributions in the magnetron sputtering system.
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Gibson, D. R., I. Brinkley, E. M. Waddell, and J. M. Walls. "Closed field magnetron sputtering: new generation sputtering process for optical coatings." In Optical Systems Design, edited by Norbert Kaiser, Michel Lequime, and H. Angus Macleod. SPIE, 2008. http://dx.doi.org/10.1117/12.797152.

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Zhang, Zaiyu, Yilong Liang, and Xianbang Jiang. "Thin HfSiN Films prepared by Magnetron Sputtering." In 5th International Conference on Advanced Design and Manufacturing Engineering. Paris, France: Atlantis Press, 2015. http://dx.doi.org/10.2991/icadme-15.2015.74.

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Reports on the topic "Magnetron sputtering"

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L.H. Ouyang, D.L. Rode, T. Zulkifli, B. Abraham-Shrauner, N. Lewis, and M.R. Freeman. GaAs Films Prepared by RF-Magnetron Sputtering. Office of Scientific and Technical Information (OSTI), August 2001. http://dx.doi.org/10.2172/821684.

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Tzeng, Yonhua, and Hongbin Zhu. Electron Assisted Deposition of Cubic Boron Nitride by RF Magnetron Sputtering. Fort Belvoir, VA: Defense Technical Information Center, April 1999. http://dx.doi.org/10.21236/ada362770.

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D.N. Ruzic, M.J. Goeckner, Samuel A. Cohen, and Zhehui Wang. Nitrogen Atom Energy Distributions in a Hollow-cathode Planar Sputtering Magnetron. Office of Scientific and Technical Information (OSTI), June 1999. http://dx.doi.org/10.2172/8184.

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Bajt, S., J. Alameda, S. Baker, and J. Taylor. Growth of thick, crystalline material using dc-magnetron sputtering in Mag1 deposition chamber. Office of Scientific and Technical Information (OSTI), November 2005. http://dx.doi.org/10.2172/883838.

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Mortazawi, Amir, and Victor Lee. Magnetron Sputtering System for Novel Intrinsically Switchable Thin Film Ferroelectric Resonators and Filters. Fort Belvoir, VA: Defense Technical Information Center, August 2012. http://dx.doi.org/10.21236/ada580741.

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Prater, W. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering. Office of Scientific and Technical Information (OSTI), November 2004. http://dx.doi.org/10.2172/839624.

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Snow, G. Characterization of dc magnetron sputtering systems for the deposition of tantalum nitride, titanium, and palladium thin films for HMC (hybrid microcircuit) applications. Office of Scientific and Technical Information (OSTI), July 1989. http://dx.doi.org/10.2172/5884585.

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Green, K. M. Determination of ionization fraction and plasma potential in a dc magnetron sputtering system using a quartz crystal microbalance and a gridded energy analyzer. Office of Scientific and Technical Information (OSTI), January 1997. http://dx.doi.org/10.2172/531049.

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