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Journal articles on the topic 'Magneto- capacitance spectroscopy'

Author: Grafiati

Published: 6 September 2023

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1

Upadhyay, Sanjay Kumar, P. L. Paulose, Kartik K. Iyer, and E. V. Sampathkumaran. "Spin-glass behavior and pyroelectric anomalies in a new lithium-based oxide, Li3FeRuO5." Physical Chemistry Chemical Physics 18, no. 33 (2016): 23348–53. http://dx.doi.org/10.1039/c6cp04179e.

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The results of dc and ac magnetization, heat capacity, ⁵⁷Fe Mössbauer spectroscopy, dielectric, pyroelectric current and isothermal magneto-capacitance measurements of a recently reported lithium-rich layered oxide, Li₃FeRuO₅, related to LiCoO₂-type (rhombohedral, space group R3̄m), are presented.

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2

RADANTSEV, V. F., G. I. KULAEV, and V. V. KRUZHAEV. "KINETIC CONFINEMENT AND ZERO–ELECTRIC–FIELD BINDING IN HgCdTe ACCUMULATION LAYERS." International Journal of Modern Physics B 18, no. 27n29 (November 30, 2004): 3637–40. http://dx.doi.org/10.1142/s0217979204027189.

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The effects of kinetic confinement and forming of surface bound states at a zero external electric field (ZEF) are studied experimentally (by the magneto-capacitance spectroscopy of Landau level method) and theoretically (in 8×8 Kane model). The self-consistent calculations we performed predict the existence of occupied kinetically bound but not true bound states at a zero interface electric field that is in agreement with experimental data. The capacitance oscillations at in 2D plane magnetic fields orientation we observed are associated with oscillations of continuum electrons screening length.

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3

Kailuweit, P., D. Reuter, A. D. Wieck, O. Wibbelhoff, A. Lorke, U. Zeitler, and J. C. Maan. "Mapping of the hole wave functions of self-assembled InAs-quantum dots by magneto-capacitance–voltage spectroscopy." Physica E: Low-dimensional Systems and Nanostructures 32, no. 1-2 (May 2006): 159–62. http://dx.doi.org/10.1016/j.physe.2005.12.031.

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4

Kailuweit, Peter, Dirk Reuter, Andreas D. Wieck, Oliver Wibbelhoff, Axel Lorke, Uli Zeitler, and J. C. Maan. "Erratum to “Mapping of the hole wave functions of self-assembled InAs-quantum dots by magneto-capacitance–voltage spectroscopy”." Physica E: Low-dimensional Systems and Nanostructures 40, no. 4 (February 2008): 935–36. http://dx.doi.org/10.1016/j.physe.2007.08.074.

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5

Mukhopadhyay, K., M. Ghosh, P. K. Mallick, and P. K. Chakrabarti. "Enhanced electric property and magneto-capacitance co-efficient co-related with modulated Raman spectroscopy of GaFeO3 in (GaFeO3)0.50(Ni0.40Zn0.40Cu0.20Fe2O4)0.50." Materials Science and Engineering: B 189 (November 2014): 51–57. http://dx.doi.org/10.1016/j.mseb.2014.07.010.

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6

Bunoiu, Madalin, Eugen Mircea Anitas, Gabriel Pascu, Larisa Marina Elisabeth Chirigiu, and Ioan Bica. "Electrical and Magnetodielectric Properties of Magneto-Active Fabrics for Electromagnetic Shielding and Health Monitoring." International Journal of Molecular Sciences 21, no. 13 (July 6, 2020): 4785. http://dx.doi.org/10.3390/ijms21134785.

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An efficient, low-cost and environmental-friendly method to fabricate magneto-active fabrics (MAFs) based on cotton fibers soaked with silicone oil and iron oxide microfibers (mFe) at mass fractions 2 wt.%, 4 wt.% and 8 wt.% is presented. It is shown that mFe induce good magnetic properties in MAFs, which are subsequently used as dielectric materials for capacitor fabrication. The electrical properties of MAFs are investigated in a static magnetic field with intensities of 0 kA/m, 160 kA/m and 320 kA/m, superimposed on a medium-frequency electric field. The influence of mFe on the electrical capacitance and dielectric loss tangent is determined, and it can be observed that the electrical conductivity, dielectric relaxation times and magnetodielectric effects are sensibly influenced by the applied magnetic and electric fields. The results indicate that the MAFs have electrical properties which could be useful for protection against electromagnetic pollution or for health monitoring.

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7

Shauyenova, Danagul, Sol Jung, Haneul Yang, Haein Yim, and Heongkyu Ju. "Electrical and Optical Properties of Co75Si15B10 Metallic Glass Nanometric Thin Films." Materials 14, no. 1 (December 31, 2020): 162. http://dx.doi.org/10.3390/ma14010162.

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Co-based (Co75Si15B10) thin-film metallic glass (TFMG) with nanometric thicknesses (100~300 nm) was investigated for its structural, electrical, and optical properties. The TFMG structure was examined using scanning electron microscopy and X-ray diffraction, while electrical properties were examined using inductance/capacitance/resistance spectroscopy, cyclic voltammetry, and Hall effect measurements. In addition, optical absorption/reflection/transmittance measurements were performed to examine optical properties. Results revealed that Co-based TFMGs, which have an amorphous structure without surface defects, behave like a dielectric material, with higher resistivity and much lower carrier concentration than pure cobalt (Co) thin films of the same thickness, despite its mobility being modestly larger than its Co counterparts. Meanwhile, the optical investigation of TFMG enabled us to determine the complex relative permittivity (complex relative dielectric constant) ϵr˜ at a visible wavelength (632.8 nm). Moreover, unlike normal metals, TFMGs exhibited a large positive value of the real part of ϵr˜, while exhibiting properties of substantial absorption of light (absorption coefficient α). It was also found that the Co-based TFMG gained optical transparency for thicknesses less than 5 nm. TFMGs demonstrated the nearly thickness-independent properties of the electrical and optical parameters probed, a feature of high-index, dielectric-like material with negligible size effects, which may have applications in micrometer-scaled optoelectronic and magneto-optical devices.

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8

Balberg, I., and E. Gal. "Capacitance spectroscopy of a-Si:H." Journal of Non-Crystalline Solids 77-78 (December 1985): 323–26. http://dx.doi.org/10.1016/0022-3093(85)90666-0.

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9

Alim, Mohammad A., Sanjida Khanam, and Martin A. Seitz. "Immittance Spectroscopy of Smart Components and Novel Devices." Active and Passive Electronic Components 16, no. 3-4 (1994): 153–70. http://dx.doi.org/10.1155/1994/25820.

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AC small-signal immittance spectroscopy is employed as a viable tool to demonstrate electrical characterization, performance improvement, and quality assurance issues of smart materials-based components and novel devices. The variation in the ac response, complemented via dc measurements within a range of tolerating temperature, delineates competing phenomena occurring in the microstructures of these engineering material systems. The results are presented in a generic manner with possible explanations on the mechanisms for two selected Debye-like (nearly ideal) and non-Debye (non-ideal) low-capacitance resistors. This spectroscopic approach allows systematic development of a representative equivalent circuit, considered to be the characteristic of the devices and components, for specific applications.

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10

Zhang, Hui, Yong Wei Song, and Zhen Lun Song. "Electrodeposited Ni/Al₂O₃ Composite Coating on NdFeB Permanent Magnets." Key Engineering Materials 373-374 (March 2008): 232–35. http://dx.doi.org/10.4028/www.scientific.net/kem.373-374.232.

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NdFeB permanent magnets are highly susceptible to corrosion in various environments. A new composite coating electrodeposited on NdFeB magnets was investigated in this paper. The Ni matrix film was firstly electrodeposited on NdFeB surface from watts nickel electrolyte, and then Ni/Al2O3 composite coating was successively electrodeposited on the Ni film. The microstructures of electrodeposited Ni coating and Ni/Al2O3 composite coating were observed by scanning electron microscopy (SEM). The corrosion behavior of Ni coating and Ni/Al2O3 composite coating in 3.5wt% NaC1 solution was studied by polarization curves and electrochemical impedance spectroscopy (EIS). The results showed that the Ni coating and Ni/Al2O3 composite coating could both provide adequate protection to NdFeB substrate. But the free corrosion potential of Ni/Al2O3 composite coating was more positive and the passivation region was more obvious when compared with Ni coating. Meantime, the capacitance loop diameter of Ni/Al2O3 composite coating was significantly larger than that of Ni coating ,which suggested that the anticorrosion resistance of Ni/Al2O3 composite coating was better than electroplated Ni coating.

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11

Tessmer, S. H., I. Kuljanishvili, C. Kayis, J. F. Harrison, C. Piermarocchi, and T. A. Kaplan. "Nanometer-scale capacitance spectroscopy of semiconductor donor molecules." Physica B: Condensed Matter 403, no. 19-20 (October 2008): 3774–80. http://dx.doi.org/10.1016/j.physb.2008.07.003.

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12

Moertelmaier, M., H. P. Huber, C. Rankl, and F. Kienberger. "Continuous capacitance–voltage spectroscopy mapping for scanning microwave microscopy." Ultramicroscopy 136 (January 2014): 67–72. http://dx.doi.org/10.1016/j.ultramic.2013.07.011.

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13

Hein, Robert, Arseni Borissov, Martin D. Smith, Paul D. Beer, and Jason J. Davis. "A halogen-bonding foldamer molecular film for selective reagentless anion sensing in water." Chemical Communications 55, no. 33 (2019): 4849–52. http://dx.doi.org/10.1039/c9cc00335e.

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14

Sizmann, R., J. Chu, F. Koch, J. Ziegler, and H. Maier. "Sub-band and resonant level spectroscopy from capacitance measurements." Semiconductor Science and Technology 5, no. 3S (March 1, 1990): S111—S114. http://dx.doi.org/10.1088/0268-1242/5/3s/024.

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15

Ok, Betül, Metin Gencten, Melih B. Arvas, and Yucel Sahin. "Preparation of Copper Doped Conducting Polymers and Their Supercapacitor Applications." ECS Journal of Solid State Science and Technology 11, no. 3 (March 1, 2022): 033004. http://dx.doi.org/10.1149/2162-8777/ac57f5.

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In this work, copper doped polyaniline and polypyrrole based materials were synthesized by in situ chemical synthesis method using of copper salt as oxidant for the first time in the literature. Prepared materials were characterized by using of microscopic, spectroscopic, and thermal methods. Doping of polyaniline and polypyrrole in the form of Cu(II) ions and Cu-N were confirmed by the analyses of X-ray photoelectron spectroscopy. The interaction mechanisms of copper and polyaniline and polypyrrole were discussed in the given work. Morphology of the copper doped conducting polymers were characterized by using of scanning electron microscopy. Particle size distribution of the prepared powders were in micron scale from 60 to 478 μm. Then, prepared copper doped conducting polymers were used as electrode materials of asymmetric type supercapacitors in 1.0 M sulfuric acid and 1.0 M sodium sulfate. The highest areal capacitance was determined as 185 mF.cm−2 at 5 mV.s−1 in copper doped polypyrrole prepared 0.4 M pyrrole, 0.5 M CuCl2 and 0.2 M HCl including medium. Here, copper doping of the conducting polymers increased capacitive properties of these materials.

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16

Li, Jian V., Adam T. Neal, Shin Mou, and Man Hoi Wong. "Investigation of a defect in the β-Ga₂O₃ substrate material from capacitance transients." Journal of Vacuum Science & Technology B 40, no. 6 (December 2022): 064001. http://dx.doi.org/10.1116/6.0002045.

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The defect ∼0.8 eV below the conduction band edge of β-Ga2O3 wide bandgap semiconductor is investigated using the matched Arrhenius-equation projection technique that offers substantial improvement over the conventional deep level transient spectroscopy technique. An experimental technique is developed to extract activation energy Ea and attempt-to-escape frequency ν0 of defects bypassing both the rate-window treatment and the Arrhenius plot. Only raw capacitance transients in the time domain are needed with this technique. The capacitance transients are projected between the temperature and time domains as well as to Ea and ν0 domains. Extraction of Ea and ν0 is accomplished by matching the projected and experimental capacitance transients to each other.

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17

Brezna, W., T. Roch, G. Strasser, and J. Smoliner. "Quantitative scanning capacitance spectroscopy on GaAs and InAs quantum dots." Semiconductor Science and Technology 20, no. 9 (July 22, 2005): 903–7. http://dx.doi.org/10.1088/0268-1242/20/9/002.

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18

Raeissi, B., J. Piscator, O. Engström, S. Hall, O. Buiu, M. C. Lemme, H. D. B. Gottlob, P. K. Hurley, K. Cherkaoui, and H. J. Osten. "High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy." Solid-State Electronics 52, no. 9 (September 2008): 1274–79. http://dx.doi.org/10.1016/j.sse.2008.04.005.

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19

Reuter, Dirk, Razvan Roescu, Minisha Mehta, Mirja Richter, and A. D. Wieck. "Capacitance–voltage spectroscopy of post-growth annealed InAs quantum dots." Physica E: Low-dimensional Systems and Nanostructures 40, no. 6 (April 2008): 1961–64. http://dx.doi.org/10.1016/j.physe.2007.09.061.

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20

Sobolev, M. M., and F. Y. Soldatenkov. "Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures." Semiconductors 54, no. 10 (October 2020): 1260–66. http://dx.doi.org/10.1134/s1063782620100280.

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21

Vollbrecht, Joachim, and Viktor V. Brus. "On Charge Carrier Density in Organic Solar Cells Obtained via Capacitance Spectroscopy." Advanced Electronic Materials 6, no. 10 (September 11, 2020): 2000517. http://dx.doi.org/10.1002/aelm.202000517.

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22

Abouzar, Maryam H., Werner Moritz, Michael J. Schöning, and Arshak Poghossian. "Capacitance-voltage and impedance-spectroscopy characteristics of nanoplate EISOI capacitors." physica status solidi (a) 208, no. 6 (May 5, 2011): 1327–32. http://dx.doi.org/10.1002/pssa.201001211.

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23

Shutov, S. D., and A. A. Simashkevich. "Isothermal capacitance transient spectroscopy of gap states in a-As2Se3 film." Journal of Non-Crystalline Solids 176, no. 2-3 (November 1994): 253–57. http://dx.doi.org/10.1016/0022-3093(94)90084-1.

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24

Kim, M. C., and S. J. Park. "Isothermal capacitance transient spectroscopy study on (Ba, Sr)TiO3-based ptcr ceramics." Ferroelectrics 153, no. 1 (March 1, 1994): 267–72. http://dx.doi.org/10.1080/00150199408016578.

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25

Wibbelhoff, O., C. Meier, A. Lorke, P. Schafmeister, and A. D. Wieck. "Wave function mapping of self-assembled quantum dots by capacitance spectroscopy." Physica E: Low-dimensional Systems and Nanostructures 21, no. 2-4 (March 2004): 516–20. http://dx.doi.org/10.1016/j.physe.2003.11.077.

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26

Sobolev, M. M., A. R. Kovsh, V. M. Ustinov, A. Yu Egorov, A. E. Zhukov, and Yu G. Musikhin. "Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures." Semiconductors 33, no. 2 (February 1999): 157–64. http://dx.doi.org/10.1134/1.1187663.

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27

Street, Robert A., Yang Yang, Barry C. Thompson, and Iain McCulloch. "Capacitance Spectroscopy of Light Induced Trap States in Organic Solar Cells." Journal of Physical Chemistry C 120, no. 39 (September 20, 2016): 22169–78. http://dx.doi.org/10.1021/acs.jpcc.6b06561.

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28

De Visschere, Patrick, and Karel Vanbesien. "Capacitance spectroscopy of alumina sol–gel capacitors with Al top contacts." Journal of Sol-Gel Science and Technology 45, no. 3 (January 31, 2008): 225–35. http://dx.doi.org/10.1007/s10971-008-1687-2.

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29

Lin, Yu-Yao, Adam T. Neal, Shin Mou, and Jian V. Li. "Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy." Journal of Vacuum Science & Technology B 37, no. 4 (July 2019): 041204. http://dx.doi.org/10.1116/1.5109088.

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30

Jiang, Huaning, Ying Tian, Xuewei Dong, and Guozhi Zhao. "Gas–Liquid Co-Deposition Fabrication of MnO₂ Nanosphere and Its Capacitive Properties in Alkaline and Neutral Electrolytes." Journal of Nanoelectronics and Optoelectronics 17, no. 4 (April 1, 2022): 642–51. http://dx.doi.org/10.1166/jno.2022.3249.

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Electrochemical capacitors may theoretically reach charging rates ranging from seconds to minutes with high power densities. The use of novel materials, the production of unique nanostructures, and the exploration of electrolytes, among other things, have substantially increased the performance of supercapacitors during the last several decades. Electrochemical capacitors employing neutral/alkaline aqueous electrolytes are safer, inexpensive and allow diversified current collectors contrast to counterparts using organic electrolytes. The key to develop high-performance supercapacitors is to find super charged electrode materials and fabricate suitable nanostructures. Here, the birnessite MnO2 with highly uniform nanosphere were successfully fabricated via facile co-deposition approach of gas–liquid phase. The symmetric supercapacitor based on MnO2 was fabricated and its capacitive properties were tested in basic and neutral electrolytes using electrochemical techniques such as voltammetry (CV), impedance (EIS), spectroscopy and galvanostatic charge–discharge. The developed capacitor exhibited weaker pseudo capacitance, but wider voltage window and improved cyclic stability in KNO3 paralleled to KOH. The specific capacitance of 145 F·g−1, 106.8 W·kg−1 power density, and energy density of 14.4 Wh·kg−1 were obtained in 3 M KNO3 at 0.25 A·g−1 current density with a capacitance loss of 9.9% after 1000 continuous cycles.

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31

Placzek-Popko, E., E. Zielony, J. Trzmiel, J. Szatkowski, Z. Gumienny, T. Wojtowicz, G. Karczewski, P. Kruszewski, and L. Dobaczewski. "Capacitance spectroscopy of CdTe self-assembled quantum dots embedded in ZnTe matrix." Physica B: Condensed Matter 404, no. 23-24 (December 2009): 5173–76. http://dx.doi.org/10.1016/j.physb.2009.08.274.

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32

Kapteyn, C. M. A., M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, and G. Abstreiter. "Hole Emission from Ge/Si Quantum Dots Studied by Time-Resolved Capacitance Spectroscopy." physica status solidi (b) 224, no. 1 (March 2001): 261–64. http://dx.doi.org/10.1002/1521-3951(200103)224:1<261::aid-pssb261>3.0.co;2-3.

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33

Filikhin, I., E. Deyneka, and B. Vlahovic. "Single-electron levels of InAs/GaAs quantum dot: Comparison with capacitance spectroscopy." Physica E: Low-dimensional Systems and Nanostructures 31, no. 1 (January 2006): 99–102. http://dx.doi.org/10.1016/j.physe.2005.10.002.

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34

Izpura, I., A. Mondaray, E. Munoz, and E. Calleja. "On the spectroscopy of DX centres by transient techniques at constant capacitance." Semiconductor Science and Technology 10, no. 1 (January 1, 1995): 25–31. http://dx.doi.org/10.1088/0268-1242/10/1/004.

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35

Urbaniak, A., A. Czudek, J. Dagar, and E. L. Unger. "Capacitance spectroscopy of thin-film formamidinium lead iodide based perovskite solar cells." Solar Energy Materials and Solar Cells 238 (May 2022): 111618. http://dx.doi.org/10.1016/j.solmat.2022.111618.

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36

Akilavasan, Jeganathan, and Frank Marlow. "Electrochemical Impedance Spectroscopy at Redox-Type Liquid|Liquid Interfaces: The Capacitance Lag." Journal of Physical Chemistry C 124, no. 7 (January 28, 2020): 4101–8. http://dx.doi.org/10.1021/acs.jpcc.9b10116.

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37

Liu, W. L., Y. L. Chen, A. A. Balandin, and K. L. Wang. "Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors." Journal of Nanoelectronics and Optoelectronics 1, no. 2 (August 1, 2006): 258–63. http://dx.doi.org/10.1166/jno.2006.212.

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38

Li, Q., Y. F. Zhang, X. R. Han, C. Ju, and Z. L. Wang. "A comparison of MoO3 nanorods and C/MoO3 nanocomposites for high-performance supercapacitor electrode." Chalcogenide Letters 18, no. 7 (July 2021): 413–20. http://dx.doi.org/10.15251/cl.2021.187.413.

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In the present work, uniform nanorods-like MoO3 and C/MoO3 nanocomposite were successfully synthesized through a facile hydrothermal method for high-performance electrochemical capacitors. The crystal structure and morphology of the products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrochemical properties of the sample were tested by means of cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS). The C/MoO3 nanocomposite displayed good electrochemical performance as a supercapacitor electrode material. The specific capacitance reached 115 F/g at a current density of 0.5 A g−1 in 6 M KOH solution. The specific capacitance of pure MoO3 electrode only has 59 F/g at a current density of 0.5 A g−1 . These results represent that the C/MoO3 nanocomposite is a promising electrode material in Supercapacitors.

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39

Igalson, Malgorzata, Aleksander Urbaniak, and Marika Edoff. "Reinterpretation of defect levels derived from capacitance spectroscopy of CIGSe solar cells." Thin Solid Films 517, no. 7 (February 2009): 2153–57. http://dx.doi.org/10.1016/j.tsf.2008.10.092.

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40

Gudovskikh, A. S., A. I. Baranov, A. V. Uvarov, D. A. Kudryashov, and J.-P. Kleider. "Space charge capacitance study of GaP/Si multilayer structures grown by plasma deposition." Journal of Physics D: Applied Physics 55, no. 13 (December 30, 2021): 135103. http://dx.doi.org/10.1088/1361-6463/ac41fa.

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Abstract Microcrystalline gallium phosphide (GaP)/Si multilayer structures grown on GaP substrates using combination of plasma enhanced atomic layer deposition (PE-ALD) for GaP and plasma-enhanced chemical vapor deposition for Si layers deposition are studied by three main space charge capacitance techniques: capacitance versus voltage (C-V) profiling, admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS), which have been used on Schottky barriers formed on the GaP/Si multilayer structures. C-V profiling qualitatively demonstrates an electron accumulation in the Si/GaP wells. However, quantitative determination of the concentration and spatial position of its maximum is limited by the strong frequency dependence of the capacitance caused by electron capture/emission processes in/from the Si/GaP wells. These processes lead to signatures in AS and DLTS with activation energies equal to 0.39 ± 0.05 and 0.28 ± 0.05 eV, respectively, that are linked to the energy barrier at the GaP/Si interface. It is shown that the value obtained by AS (0.39 ± 0.05 eV) is related to the response from Si/GaP wells located in the quasi-neutral region of the Schottky barrier, and it corresponds to the conduction band offset at the GaP/Si interface, while DLTS rather probes wells located in the space charge region closer to the Schottky interface where the internal electric field yields to a lowering of the effective barrier in the Si/GaP wells. Two additional signatures were detected by DLTS, which are identified as defect levels in GaP. The first one is associated to the SiGa + VP complex, while the second was already detected in single microcrystalline GaP layers grown by PE-ALD.

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41

Kiyota, H., H. Okushi, K. Okano, Y. Akiba, T. Kurosu, and M. Iida. "Isothermal capacitance transient spectroscopy study of defect states in polycrystalline diamond films." Diamond and Related Materials 2, no. 8 (May 1993): 1179–84. http://dx.doi.org/10.1016/0925-9635(93)90166-y.

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42

Lim, Youngjoon, and Sang-Yup Lee. "Capacitance Measurement of SiO2@BSA Core–Shell Nanoparticles Using AC Impedance Spectroscopy." Journal of The Electrochemical Society 162, no. 8 (2015): G48—G53. http://dx.doi.org/10.1149/2.0751508jes.

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43

Kapteyn, C. M. A., M. Lion, R. Heitz, D. Bimberg, P. Brunkov, B. Volovik, S. G. Konnikov, A. R. Kovsh, and V. M. Ustinov. "Time-Resolved Capacitance Spectroscopy of Hole and Electron Levels in InAs/GaAs Quantum Dots." physica status solidi (b) 224, no. 1 (March 2001): 57–60. http://dx.doi.org/10.1002/1521-3951(200103)224:1<57::aid-pssb57>3.0.co;2-r.

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44

Schmidt, Matthias, Kerstin Brachwitz, Florian Schmidt, Martin Ellguth, Holger von Wenckstern, Rainer Pickenhain, Marius Grundmann, Gerhard Brauer, and Wolfgang Skorupa. "Nickel-related defects in ZnO - A deep-level transient spectroscopy and photo-capacitance study." physica status solidi (b) 248, no. 8 (March 10, 2011): 1949–55. http://dx.doi.org/10.1002/pssb.201046634.

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45

Sobolev, M. M., O. S. Ken, O. M. Sreseli, D. A. Yavsin, and S. A. Gurevich. "Capacitance spectroscopy of structures with Si nanoparticles deposited onto crystalline silicon p-Si." Semiconductor Science and Technology 34, no. 8 (July 5, 2019): 085003. http://dx.doi.org/10.1088/1361-6641/ab2c21.

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46

Rather, Mudasir Hussain, Feroz Ahmad Mir, and Peerzada Ajaz Ahmad. "Performance of a PANI/MnO₂ Nanocomposite-Based Supercapacitor/Diode Under DC Magnetic Field and Visible and Ultraviolet Photon Irradiation." ECS Journal of Solid State Science and Technology 12, no. 3 (March 1, 2023): 033004. http://dx.doi.org/10.1149/2162-8777/acbfde.

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Polyaniline/Manganese dioxide (PANI/MnO2) nanocomposite has been successfully prepared by in situ polymerization method. The X-ray Diffraction (XRD) data confirm the formation of PANI/MnO2 nanocomposites. Fourier Transform Infrared (FT-IR) spectroscopy confirms the vibrationsdominant by metal oxide and polymer in the complex format. The Scanning Electron Microscope (SEM) shows that these nanocomposites exhibits nano rods like morphologies. The optical properties were studied by UV–visible Spectroscopy and the optical band gaps were estimated to be around 1.62 eV. Also this composite follow indirect allowed transition. Cyclic Voltammetry (CV) of this composites were also studied, and from this data the specific capacitance (Cp), energy density (Ed), power density (Pd) and charge retention were also calculated. Additionally, from CV data, the energy levels such as the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) were also determined. A supercapacitor of this understudy material was designed and it’s charging and discharging under different conditions (like under the exposure of different wavelengths of light and various intensities of static magnetic fields)were also studied and explained. The preliminary designed supercapacitor shows good charge retention capacity. The specific capacitance of this capacitor remainsaround 463 Fg−1 at 200 cycles. Besides this, a planner diode of this composite was also fabricated and this diode was tested for current-voltage (IV) characteristics under various conditions like under exposure to photons of various wavelengths and in presence of different static magnetic fields.The various parameters related with this diode were analyzed and studied. The dielectric studies of this material were studied. The current materials could be explored as a good candidate for modern energy storage and optoelectronics applications.

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47

Muret, Pierre R. "Comprehensive characterization of interface and oxide states in metal/oxide/semiconductor capacitors by pulsed mode capacitance and differential isothermal capacitance spectroscopy." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32, no. 3 (May 2014): 03D114. http://dx.doi.org/10.1116/1.4865912.

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Poghossian, A., D. T. Mai, Yu Mourzina, and M. J. Schöning. "Impedance effect of an ion-sensitive membrane: characterisation of an EMIS sensor by impedance spectroscopy, capacitance–voltage and constant–capacitance method." Sensors and Actuators B: Chemical 103, no. 1-2 (September 2004): 423–28. http://dx.doi.org/10.1016/j.snb.2004.04.071.

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Wetzler, R., C. M. A. Kapteyn, R. Heitz, A. Wacker, E. Sch�ll, and D. Bimberg. "Capacitance-Voltage Spectroscopy of Self-Organized InAs/GaAs Quantum Dots Embedded in a pn Diode." physica status solidi (b) 224, no. 1 (March 2001): 79–83. http://dx.doi.org/10.1002/1521-3951(200103)224:1<79::aid-pssb79>3.0.co;2-b.

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Gudovskikh, A. S., J. P. Kleider, and R. Stangl. "New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions." Journal of Non-Crystalline Solids 352, no. 9-20 (June 2006): 1213–16. http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.100.

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