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Author: Grafiati
Published: 6 September 2023

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1

Srivani, Alla. "Spintronics and Optical Properties of Advanced Bio Materials." Radiology Research and Diagnostic Imaging 2, no. 1 (February 9, 2023): 01–05. http://dx.doi.org/10.58489/2836-5127/009.

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Spintronics is an interactive combination of electronics and magnetics that has grown in popularity in the twenty-first century as nanotechnology has advanced. Spintronics is a new type of electronics that employs mutual control of magnetic and other physical signals, such as electrical and optical signals. Spin current has recently received a lot of attention as a basic idea in spintronics. Understanding spin current entails deciphering the mechanisms underlying the mutual control of diverse physical signals, which should lead to future advances in spintronics. The notion of spin current and its historical context are discussed first in this chapter, followed by a discussion of innovative materials for spintronics. Much attention is also dedicated to the physical phenomena that result from the coupling of spins.
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2

Ning, Weihua, Jinke Bao, Yuttapoom Puttisong, Fabrizo Moro, Libor Kobera, Seiya Shimono, Linqin Wang, et al. "Magnetizing lead-free halide double perovskites." Science Advances 6, no. 45 (November 2020): eabb5381. http://dx.doi.org/10.1126/sciadv.abb5381.

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Spintronics holds great potential for next-generation high-speed and low–power consumption information technology. Recently, lead halide perovskites (LHPs), which have gained great success in optoelectronics, also show interesting magnetic properties. However, the spin-related properties in LHPs originate from the spin-orbit coupling of Pb, limiting further development of these materials in spintronics. Here, we demonstrate a new generation of halide perovskites, by alloying magnetic elements into optoelectronic double perovskites, which provide rich chemical and structural diversities to host different magnetic elements. In our iron-alloyed double perovskite, Cs2Ag(Bi:Fe)Br6, Fe3+ replaces Bi3+ and forms FeBr6 clusters that homogenously distribute throughout the double perovskite crystals. We observe a strong temperature-dependent magnetic response at temperatures below 30 K, which is tentatively attributed to a weak ferromagnetic or antiferromagnetic response from localized regions. We anticipate that this work will stimulate future efforts in exploring this simple yet efficient approach to develop new spintronic materials based on lead-free double perovskites.
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3

Kumar, Prashant, Ravi Kumar, Sanjeev Kumar, Manoj Kumar Khanna, Ravinder Kumar, Vinod Kumar, and Akanksha Gupta. "Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devices." Magnetochemistry 9, no. 3 (March 2, 2023): 73. http://dx.doi.org/10.3390/magnetochemistry9030073.

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Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of 2D topological insulators (TIs). Preparation methods of TIs along with fundamental properties, such as low power dissipation and spin polarized electrons, have been explored. Magnetic TIs have been extensively discussed and explained. Weyl phases, topological superconductors, and TIs are covered in this review. We have focused on creating novel spintronic gadgets based on TIs which have metallic topological exterior facades that are topologically defended and have an insulating bulk. In this review, topological phases are discussed as a potential candidate for novel quantum phenomena and new technological advances for fault-tolerant quantum computation in spintronics, low-power electronics, and as a host for Majorana fermions are elucidated. Room temperature stable magnetic skyrmions and anti-skyrmions in spintronics for next-generation memory/storage devices have been reported.
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4

Rehman, Mehtab Ur, Qun Wang, and Yunfei Yu. "Electronic, Magnetic and Optical Properties of Double Perovskite Compounds: A First Principle Approach." Crystals 12, no. 11 (November 10, 2022): 1597. http://dx.doi.org/10.3390/cryst12111597.

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Double perovskite compounds (DPCs) have gained much more attention due to their versatile character in the fields of electronics and spintronics. Using density functional theory (DFT) we investigated the electronic, magnetic and optical properties of DPC La2BB′O6 where B = Cr, Sc and V and B′ = Co, Ni. The electronic band gaps suggest these compounds are half-metallic (HF) semiconductors in the spin-up channel and metallic in the spin-down channel. Magnetic properties suggest these are ferromagnetic in nature, so all DPCs are half-metallic ferromagnetic (HM-FM). Furthermore, the compound La2CrCoO6 shows outstanding electronic and optical properties, so it can be used in optoelectronic/spintronic devices.
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5

Jayanthi, K., and Sunkara V. Manorama. "Lumino-magnetic YAG:Ce nanophosphors: novel synthesis routes for efficient luminescence and magnetic properties." J. Mater. Chem. C 2, no. 48 (2014): 10322–30. http://dx.doi.org/10.1039/c4tc01960a.

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6

Navarro-Quezada, Andrea. "Magnetic Nanostructures Embedded in III-Nitrides: Assembly and Performance." Crystals 10, no. 5 (May 1, 2020): 359. http://dx.doi.org/10.3390/cryst10050359.

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III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and high-power electronic applications. Through the incorporation of magnetic ions, like transition metals and rare-earths, III-Nitrides have further extended their applicability to spintronic devices. However, in most III-Nitrides the low solubility of the magnetic ions leads to the formation of secondary phases that are often responsible for the observed magnetic behavior of the layers. The present review summarizes the research dedicated to the understanding of the basic properties, from the fabrication to the performance, of III-Nitride-based phase-separated magnetic systems containing embedded magnetic nanostructures as suitable candidates for spintronics applications.
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7

Soh, Yeong-Ah, and Ravi K. Kummamuru. "Spintronics in antiferromagnets." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1951 (September 28, 2011): 3646–57. http://dx.doi.org/10.1098/rsta.2011.0186.

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Magnetic domains and the walls between are the subject of great interest because of the role they play in determining the electrical properties of ferromagnetic materials and as a means of manipulating electron spin in spintronic devices. However, much less attention has been paid to these effects in antiferromagnets, primarily because there is less awareness of their existence in antiferromagnets, and in addition they are hard to probe since they exhibit no net magnetic moment. In this paper, we discuss the electrical properties of chromium, which is the only elemental antiferromagnet and how they depend on the subtle arrangement of the antiferromagnetically ordered spins. X-ray measurement of the modulation wavevector Q of the incommensurate antiferromagnetic spin-density wave shows thermal hysteresis, with the corresponding wavelength being larger during cooling than during warming. The thermal hysteresis in the Q vector is accompanied with a thermal hysteresis in both the longitudinal and Hall resistivity. During cooling, we measure a larger longitudinal and Hall resistivity compared with when warming, which indicates that a larger wavelength at a given temperature corresponds to a smaller carrier density or equivalently a larger antiferromagnetic ordering parameter compared to a smaller wavelength. This shows that the arrangement of the antiferromagnetic spins directly influences the transport properties. In thin films, the sign of the thermal hysteresis for Q is the same as in thick films, but a distinct aspect is that Q is quantized.
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8

SUKEGAWA, H., Z. C. WEN, S. KASAI, K. INOMATA, and S. MITANI. "SPIN TRANSFER TORQUE SWITCHING AND PERPENDICULAR MAGNETIC ANISOTROPY IN FULL HEUSLER ALLOY Co2FeAl-BASED TUNNEL JUNCTIONS." SPIN 04, no. 04 (December 2014): 1440023. http://dx.doi.org/10.1142/s2010324714400232.

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Some of Co -based full Heusler alloys have remarkable properties in spintronics, that is, high spin polarization of conduction electrons and low magnetic damping. Owing to these properties, magnetic tunnel junctions (MTJs) using Co -based full Heusler alloys are potentially of particular importance for spintronic application such as magnetoresistive random access memories (MRAMs). Recently, we have first demonstrated spin transfer torque (STT) switching and perpendicular magnetic anisotropy (PMA), which are required for developing high-density MRAMs, in full-Heusler Co 2 FeAl alloy-based MTJs. In this review, the main results of the experimental demonstrations are shown with referring to related issues, and the prospect of MTJs using Heusler alloys is also discussed.
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9

Li, Xinlu, Meng Zhu, Yaoyuan Wang, Fanxing Zheng, Jianting Dong, Ye Zhou, Long You, and Jia Zhang. "Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces." Applied Physics Letters 122, no. 8 (February 20, 2023): 082404. http://dx.doi.org/10.1063/5.0136180.

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Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW materials has largely impeded its development in practical spintronic devices. Inspired by the lately discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.
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10

Chen, Xia, and Wenbo Mi. "Mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics." Journal of Materials Chemistry C 9, no. 30 (2021): 9400–9430. http://dx.doi.org/10.1039/d1tc01989a.

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The mechanically tunable magnetic and electronic transport properties of flexible magnetic films and their heterostructures for spintronics have been reviewed, where the conclusion and outlook are also presented.
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11

Telegin, Andrei, and Yurii Sukhorukov. "Magnetic Semiconductors as Materials for Spintronics." Magnetochemistry 8, no. 12 (November 29, 2022): 173. http://dx.doi.org/10.3390/magnetochemistry8120173.

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From the various aspects of spintronics the review highlights the area devoted to the creation of new functional materials based on magnetic semiconductors and demonstrates both the main physical phenomena involved and the technical possibilities of creating various devices: maser, p-n diode with colossal magnetoresistance, spin valve, magnetic lens, optical modulators, spin wave amplifier, etc. Particular attention is paid to promising research directions such as ultrafast spin transport and THz spectroscopy of magnetic semiconductors. Special care has been taken to include a brief theoretical background and experimental results for the new spintronics approach employing magnetostrictive semiconductors—strain-magnetooptics. Finally, it presents top-down approaches for magnetic semiconductors. The mechano-physical methods of obtaining and features of the physical properties of high-density nanoceramics based on complex magnetic oxides are considered. The potential possibility of using these nanoceramics as an absorber of solar energy, as well as in modulators of electromagnetic radiation, is shown.
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12

Yakhmi, Jatinder V., and Vaishali Bambole. "Molecular Spintronics." Solid State Phenomena 189 (June 2012): 95–127. http://dx.doi.org/10.4028/www.scientific.net/ssp.189.95.

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The emergence of spintronics (spin-based electronics), which exploits electronic charge as well as the spin degree of freedom to store/process data has already seen some of its fundamental results turned into actual devices during the last decade. Information encoded in spins persists even when the device is switched off; it can be manipulated with and without using magnetic fields and can be written using little energy. Eventually, spintronics aims at spin control of electrical properties (I-V characteristics), contrary to the common process of controlling the magnetization (spins) via application of electrical field. In the meantime, another revolution in electronics appears to be unfolding, with the evolution of Molecular Spintronics which aims at manipulating spins and charges in electronic devices containing one or more molecules, because a long spin lifetime is expected from the very small spin-orbit coupling in organic semiconductors. This futuristic area is fascinating because it promises the integration of memory and logic functions,
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13

Tsoi, Maxim. "Antiferromagnetic spintronics: From metals to functional oxides." Low Temperature Physics 49, no. 7 (July 1, 2023): 786–93. http://dx.doi.org/10.1063/10.0019689.

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Antiferromagnetic spintronics exploits unique properties of antiferromagnetic materials to create new and improved functionalities in future spintronic applications. Here, we briefly review the experimental efforts in our group to unravel spin transport properties in antiferromagnetic materials. Our investigations were initially focused on metallic antiferromagnets, where the first evidence of antiferromagnetic spin-transfer torque was discovered. Because of the lack of metallic antiferromagnets, we then shifted towards antiferromagnetic Mott insulators, where a plethora of transport phenomena was found. For instance, we observed a very large anisotropic magnetoresistance, which can be used to detect the magnetic state of an antiferromagnet. We also observed reversible resistive switching and now provide unequivocal evidence that the resistive switching is associated with structural distortions driven by an electric field. Our findings support the potential of electrically controlled functional oxides for various memory technologies.
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14

Ioannou, Marinos. "The role of ferromagnets and antiferromagnets for spintronic memory applications and their impact in data storage." Emerging Minds Journal for Student Research 1 (July 3, 2023): 1–6. http://dx.doi.org/10.59973/emjsr.6.

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The manipulation of multifunctional properties associated with ferromagnetic and antiferromagnetic materials has a great impact in information technology and digital data storage. A relatively recent field called spintronics is a promising alternative technology to store data more efficiently and to overcome obstacles that conventional electronics face. This article provides a small introduction to spintronic devices used for memory applications such as hard disk drives and MRAM, and details ways by which magnetization inside magnetic layers such as ferromagnets can be flipped. The giant magnetoresistance (GMR) effect and its successor in developing memory devices; the tunnelling magnetoresistance (TMR) effect are also discussed since they are key in developing magnetic memory devices.
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15

Akshay, V. R., B. Arun, Guruprasad Mandal, and M. Vasundhara. "Structural, optical and magnetic behavior of sol–gel derived Ni-doped dilute magnetic semiconductor TiO2 nanocrystals for advanced functional applications." Physical Chemistry Chemical Physics 21, no. 5 (2019): 2519–32. http://dx.doi.org/10.1039/c8cp06875e.

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16

Popoola, Adewumi I., and S. Babatunde Akinpelu. "Numerical Investigation of the Stability and Spintronic Properties of Selected Quaternary Alloys." European Journal of Applied Physics 3, no. 4 (July 8, 2021): 6–12. http://dx.doi.org/10.24018/ejphysics.2021.3.4.86.

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The use of electronic charge and spins (spintronics) has been proposed for much better data storage. This class of material is believed to have excellent capability for data integrity, low dynamic power consumption and high-density storage that showcases excellent protection against data loss. The spintronic and related properties have been investigated on four newly proposed quaternary alloys (NbRhGeCo, NbRhGeCr, NbRhGeFe and NbRhGeNi) through the first-principles calculation method of the Density Functional Theory (DFT). Specifically, the phonon frequencies, elastic stabilities, and the electronic structure were systematically studied in the full Heusler structure. The results predict that NbRhGeFe and NbRhGeCr are elastically and structurally stable. Both NbRhGeFe and NbRhGeCo are half-metals with ferromagnetic character, but NbRhGeCo is unfortunately elastically unstable. NbRhGeCr and NbRhGeNi are non-magnetic metallic alloys in their spin channels. All the results predict NbRhGeFe to be the only suitable among all the four alloys for spintronic application.
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17

Zou, Yuxin, Xin Wang, Liwei Liu, Tielei Song, Zhifeng Liu, and Xin Cui. "First-Principles Study on Mechanical, Electronic, and Magnetic Properties of Room Temperature Ferromagnetic Half-Metal MnNCl Monolayer." Nanomaterials 13, no. 11 (May 23, 2023): 1712. http://dx.doi.org/10.3390/nano13111712.

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Two-dimensional ferromagnetic (FM) half-metals are highly desirable for the development of multifunctional spintronic nano-devices due to their 100% spin polarization and possible interesting single-spin electronic states. Herein, using first-principles calculations based on density functional theory (DFT) with the Perdew–Burke–Ernzerhof (PBE) functional, we demonstrate that the MnNCl monolayer is a promising FM half-metal for spintronics. Specifically, we systematically investigated its mechanical, magnetic, and electronic properties. The results reveal that the MnNCl monolayer has superb mechanic, dynamic, and thermal (ab initio molecular dynamics (AIMD) simulation at 900 K) stability. More importantly, its intrinsic FM ground state has a large magnetic moment (6.16 μB), a large magnet anisotropy energy (184.5 μeV), an ultra-high Curie temperature (952 K), and a wide direct band gap (3.10 eV) in the spin-down channel. Furthermore, by applying biaxial strain, the MnNCl monolayer can still maintain its half-metallic properties and shows an enhancement of magnetic properties. These findings establish a promising new two-dimensional (2D) magnetic half-metal material, which should expand the library of 2D magnetic materials.
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18

Zhang, Yinggan, Zhou Cui, Baisheng Sa, Naihua Miao, Jian Zhou, and Zhimei Sun. "Computational design of double transition metal MXenes with intrinsic magnetic properties." Nanoscale Horizons 7, no. 3 (2022): 276–87. http://dx.doi.org/10.1039/d1nh00621e.

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Double transition metal MXenes with the formula MCr2CTx feature ferromagnetic half-metallicity, antiferromagnetic semiconductivity, as well as antiferromagnetic half-metallicity, are interesting for the spintronics community.
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19

Shukla, Vineeta. "The tunable electric and magnetic properties of 2D MXenes and their potential applications." Materials Advances 1, no. 9 (2020): 3104–21. http://dx.doi.org/10.1039/d0ma00548g.

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20

Dempsey, Kari J., David Ciudad, and Christopher H. Marrows. "Single electron spintronics." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1948 (August 13, 2011): 3150–74. http://dx.doi.org/10.1098/rsta.2011.0105.

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Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.
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21

RAMAN, KARTHIK V., NICOLAE ATODIRESEI, and JAGADEESH S. MOODERA. "TAILORING FERROMAGNET–MOLECULE INTERFACES: TOWARDS MOLECULAR SPINTRONICS." SPIN 04, no. 02 (June 2014): 1440014. http://dx.doi.org/10.1142/s2010324714400141.

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Understanding the interaction of organic molecules adsorbed on magnetic surfaces has shown considerable progress in recent years. The creation of hybridized interface between carbon-based aromatic molecule and the magnetic surface is observed to give rise to new interface states with unique electronic and magnetic character. This study has opened up a molecular-design initiative to tailor the spin dependent electronic and magnetic functionalities of the hybrid interface. The purpose of this article is to provide a fundamental understanding of the spin-chemistry and spin-physics associated with the formation of such ferromagnet-molecule hybrid interfaces. We also discuss the recent progress in this field using state-of-the-art experiments and theoretical calculations with focus on the magnetic properties of the molecule and the magnetic surface. The study reveals several interesting interface phenomena: formation of induced molecular moment and exchange coupling with the magnetic surface, and molecular spin-filters. It also demonstrates significant changes in the magnetic anisotropy and inter-atomic magnetic exchange coupling of the magnetic surface. These studies open the possibilities of exploring new molecular functionalities toward further research in the subfield of interface-assisted molecular spintronics.
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22

Zhang, Y. J., Z. H. Liu, Z. G. Wu, and X. Q. Ma. "Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys." IUCrJ 6, no. 4 (May 9, 2019): 610–18. http://dx.doi.org/10.1107/s2052252519005062.

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Materials with full spin polarization that exhibit zero net magnetization attract great scientific interest because of their potential applications in spintronics. Here, the structural, magnetic and electronic properties of a C1 b -ordered FeMnGa alloy are reported using first-principles calculations. The results indicate that the corresponding band structure exhibits a considerable gap in one of the spin channels and a zero gap in the other thus allowing for high mobility of fully spin-polarized carriers. The localized magnetic moments of Fe and Mn atoms have an antiparallel arrangement leading to fully compensated ferrimagnetism, which possesses broken magnetic inversion symmetry. Such magnetic systems do not produce dipole fields and are extremely stable against external magnetic fields. Therefore, this will improve the performance of spintronic devices. Using this principle, similar band dispersion and compensated magnetic moments were predicted in a C1 b -ordered FeMnAl0.5In0.5 Heusler alloy.
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23

Xia, Baorui, Daqiang Gao, Peitao Liu, Yonggang Liu, Shoupeng Shi, and Kun Tao. "Zigzag-edge related ferromagnetism in MoSe2 nanoflakes." Physical Chemistry Chemical Physics 17, no. 48 (2015): 32505–10. http://dx.doi.org/10.1039/c5cp05640c.

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24

Ito, Keita, Syuta Honda, and Takashi Suemasu. "Transition metal nitrides and their mixed crystals for spintronics." Nanotechnology 33, no. 6 (November 15, 2021): 062001. http://dx.doi.org/10.1088/1361-6528/ac2fe4.

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Abstract Anti-perovskite transition metal nitrides exhibit a variety of magnetic properties—such as ferromagnetic, ferrimagnetic, and paramagnetic—depending on the 3d transition metal. Fe4N and Co4N are ferromagnetic at room temperature (RT), and the minority spins play a dominant role in the electrical transport properties. However, Mn4N is ferrimagnetic at RT and exhibits a perpendicular magnetic anisotropy caused by tensile strain. Around the magnetic compensation in Mn4N induced by impurity doping, researchers have demonstrated ultrafast current-induced domain wall motion reaching 3000 m s−1 at RT, making switching energies lower and switching speed higher compared with Mn4N. In this review article, we start with individual magnetic nitrides—such as Fe4N, Co4N, Ni4N, and Mn4N; describe the nitrides’ features; and then discuss compounds such as Fe4−x A x N (A = Co, Ni, and Mn) and Mn4−x B x N (B = Ni, Co, and Fe) to evaluate nitride properties from the standpoint of spintronics applications. We pay particular attention to preferential sites of A and B atoms in these compounds, based on x-ray absorption spectroscopy and x-ray magnetic circular dichroism.
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Sartori, Kevin, Geoffrey Cotin, Corinne Bouillet, Valérie Halté, Sylvie Bégin-Colin, Fadi Choueikani, and Benoit P. Pichon. "Strong interfacial coupling through exchange interactions in soft/hard core–shell nanoparticles as a function of cationic distribution." Nanoscale 11, no. 27 (2019): 12946–58. http://dx.doi.org/10.1039/c9nr02323b.

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26

Hashmi, Arqum, and Jisang Hong. "Magnetic properties of graphene/BN/Co(111) and potential spintronics." Journal of Magnetism and Magnetic Materials 355 (April 2014): 7–11. http://dx.doi.org/10.1016/j.jmmm.2013.11.036.

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27

Meng, Qing-Yu, Qiang Lu, Wei-Bin Cui, Tong-Tong Xu, and Lian-Lian Zhang. "Tuning electronic properties and ferromagnetism of CrI3 monolayers with doped transition-metal atoms." Journal of Physics D: Applied Physics 55, no. 26 (April 12, 2022): 265303. http://dx.doi.org/10.1088/1361-6463/ac60ce.

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Abstract Chromium triiodide (CrI3) monolayers have attracted much attention among the first two-dimensional materials discovered experimentally in both electronics and spintronics due to their potential applications. By means of density functional theory, we perform investigations of the electronic structures and magnetic properties of CrI3 monolayer doped with 3 d transition-metal (TM) atoms, which is also called CrXI6 monolayer with X changed from Sc to Fe. It is shown that the electron properties of the CrXI6 system can be tuned from semiconductor to metal/half-metal, which depend on the types of TM atoms. In addition, the CrXI6 system improves ferromagnetic (FM) stabilities, enhancement of magnetic moments, and FM-to-antiferromagnetic transition. These findings enrich the potential application perspectives of CrI3 monolayer in spintronics.
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Zhang, Peina, Xinlu Li, Jianting Dong, Meng Zhu, Fanxing Zheng, and Jia Zhang. "π-magnetism and spin-dependent transport in boron pair doped armchair graphene nanoribbons." Applied Physics Letters 120, no. 13 (March 28, 2022): 132406. http://dx.doi.org/10.1063/5.0086377.

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Carbon-based magnetic nanostructures have long spin coherent length and are promising for spintronics applications in data storage and information processing. Recent experiments demonstrate that a pair of substitutional boron atoms (B2) doped 7-atom-wide armchair graphene nanoribbons (B2-7AGNRs) have intrinsic magnetism, providing a quasi-1D magnetic material platform for spintronics. In this work, we demonstrate that the magnetism in B2-7AGNRs is contributed by π-electrons, originating from the imbalance of electrons in two spin channels in response to boron dopants. The spin-dependent transport across single and double boron pair doped 7AGNRs (B2-7AGNRs and 2B2-7AGNRs) by constructing lateral graphene nanoribbon heterojunctions has been investigated by using first-principles calculations. We show that for B2-7AGNRs with spin splitting π -electronic states near the Fermi level, by applying a bias voltage, one can obtain a current spin polarization over 90% and a negative differential resistance effect. For 2B2-7AGNRs, two spin centers have been found to be antiferromagnetically coupled. We demonstrate a magnetoresistance effect over 15 000% by setting those two spin centers to be ferromagnetic and antiferromagnetic alignments. Based on the above spin-polarized transport properties, we reveal that GNR heterojunctions based on B2-7AGNRs could be potentially applied in quasi-1D spintronic devices.
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29

Piraux, Luc. "Magnetic Nanowires." Applied Sciences 10, no. 5 (March 6, 2020): 1832. http://dx.doi.org/10.3390/app10051832.

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Magnetic nanowires are attractive materials because of their morphology-dependent remarkable properties suitable for various advanced technologies in sensing, data storage, spintronics, biomedicine and microwave devices, etc. The recent advances in synthetic strategies and approaches for the fabrication of complex structures, such as parallel arrays and 3D networks of one-dimensional nanostructures, including nanowires, nanotubes, and multilayers, are presented. The simple template-assisted electrodeposition method enables the fabrication of different nanowire-based architectures with excellent control over geometrical features, morphology and chemical composition, leading to tunable magnetic, magneto-transport and thermoelectric properties. This review article summarizing the work carried out at UCLouvain focuses on the magnetic and spin-dependent transport properties linked to the material and geometrical characteristics.
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Banerjee, Mahasweta, Ayan Mukherjee, Amit Banerjee, Debajyoti Das, and Soumen Basu. "Enhancement of multiferroic properties and unusual magnetic phase transition in Eu doped bismuth ferrite nanoparticles." New Journal of Chemistry 41, no. 19 (2017): 10985–91. http://dx.doi.org/10.1039/c7nj02769a.

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31

Meng, Bo, Wen-zhi Xiao, Ling-ling Wang, Li Yue, Song Zhang, and Hong-yun Zhang. "Half-metallic and magnetic properties in nonmagnetic element embedded graphitic carbon nitride sheets." Physical Chemistry Chemical Physics 17, no. 34 (2015): 22136–43. http://dx.doi.org/10.1039/c5cp03794h.

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32

Tyagi, Pawan, Christopher D'Angelo, and Collin Baker. "Monte Carlo and Experimental Magnetic Studies of Molecular Spintronics Devices." Nano 10, no. 04 (June 2015): 1550056. http://dx.doi.org/10.1142/s1793292015500563.

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Molecule-based spintronics devices (MSDs) are highly promising candidates for discovering advanced logic and memory computer units. An advanced MSD will require the placement of paramagnetic molecules between the two ferromagnetic (FM) electrodes. Due to extreme fabrication challenges, only a couple of experimental studies could be performed to understand the effect of magnetic molecules on the overall magnetic and transport properties of MSDs. To date, theoretical studies mainly focused on charge and spin transport aspects of MSDs; there is a dearth of knowledge about the effect of magnetic molecules on the magnetic properties of MSDs. This paper investigates the effect of magnetic molecules, with a net spin, on the magnetic properties of 2D MSDs via Monte Carlo (MC) simulations. Our MC simulations encompass a wide range of MSDs that can be realized by establishing different kinds of magnetic interactions between molecules and FM electrodes at different temperatures. The MC simulations show that ambient thermal energy strongly influenced the molecular coupling effect on the MSD. We studied the nature and strength of molecule couplings (FM and antiferromagnetic) with the two electrodes on the magnetization, specific heat and magnetic susceptibility of MSDs. For the case when the nature of molecule interaction was FM with one electrode and antiferromagnetic with another electrode the overall magnetization shifted toward zero. In this case, the effect of molecules was also a strong function of the nature and strength of direct coupling between FM electrodes. In the case when molecules make opposite magnetic couplings with the two FM electrodes, the MSD model used for MC studies resembled with the magnetic tunnel junction based MSD. The experimental magnetic studies on these devices are in agreement with our theoretical MC simulations results. Our MC simulations will enable the fundamental understanding and designing of a wide range of novel spintronics devices utilizing a variety of molecules, nanoclusters and quantum dots as the device elements.
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Morari, R., V. Zdravkov, E. Antropov, and A. Sidorenko. "Nanolayers with Advanced Properties for Superconducting Spintronics." Journal of Nanoelectronics and Optoelectronics 7, no. 7 (December 1, 2012): 678–80. http://dx.doi.org/10.1166/jno.2012.1417.

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34

Khludkov, S. S., I. A. Prudaev, L. O. Root, O. P. Tolbanov, and I. V. Ivonin. "Aluminum nitride doped with transition metal group atoms as a material for spintronics." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 11 (2020): 162–72. http://dx.doi.org/10.17223/00213411/63/11/162.

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Aluminum nitride doped with transition metal group atoms as a material for spintronics The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.
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35

Druzhinin, Anatoly, Igor Ostrovskii, Yuriy Khoverko, and Sergij Yatsukhnenko. "Magnetic Properties of Doped Si<B,Ni> Whiskers for Spintronics." Journal of Nano Research 39 (February 2016): 43–54. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.43.

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Study the magnetic properties of Si<B,Ni> whiskers, the concentration of which corresponds to a dielectric and metal side of metal-insulator transition, is performed. Percolation laws of the magnetic clusters formation, that is important for development of spintronic devices, are considered.
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36

Verzhbitskiy, Ivan, and Goki Eda. "Electrostatic control of magnetism: Emergent opportunities with van der Waals materials." Applied Physics Letters 121, no. 6 (August 8, 2022): 060501. http://dx.doi.org/10.1063/5.0107329.

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Since the first reports on the observation of magnetic order in atomically thin crystals of FePS3, CrI3, and CrGeTe3 in 2016 and 2017, there has been a greatly renewed interest in the magnetism of van der Waals (vdW) layered magnets. Due to their dimensionality and structure, ultrathin vdW magnets offer tantalizing prospects for electrostatic control of magnetism for energy-efficient spintronic logic and memory devices. Recent demonstrations revealed unusually high susceptibility of some vdW magnets to electrostatic fields and shed light on a path to room temperature devices, a long-standing goal in spintronics research. In this Perspective, we discuss the potential of different classes of vdW magnets for electrostatic control of magnetism by comparing their properties with those of non-vdW magnets such as dilute magnetic III–V semiconductors and perovskite manganites that have been intensively studied in the past two decades.
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Pamungkas, Mauludi Ariesto, Vinsa Kharisma Rofiqo Sari, Irwansyah, Setiawan Ade Putra, Abdurrouf, and Muhammad Nurhuda. "Tuning Electronic Structure and Magnetic Properties of Flat Stanene by Hydrogenation and Al/P Doping: A First Principle DFT Study." Coatings 11, no. 1 (January 5, 2021): 47. http://dx.doi.org/10.3390/coatings11010047.

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A Stanene, is a two-dimensional material composed of tin atoms arranged in a single hexagonal layer, in a manner similar to graphene. First principle studies based on density functional theory were performed to investigate the effects of hydrogenation and Al/P doping on electronic structure and magnetic properties of stanene. Hydrogenation opens the bandgap of stanene and changes it from nonmagnetic to the ferromagnetic material through H 1s states and Sn 5p states hybridization. Al/P atom at hollow site prevent electrons of adjacent Sn atoms to connect so that inducing unpaired electrons. The combination of hydrogenation and Al/P doping increases its magnetization. The sequence based on its magnetic moment from small to large is as follows: pure stanene, Al-doped stanene, P-doped stanene, hydrogenated stanene, Al-doped hydrogenated stanene, and P-doped hydrogenated stanene. The controllable transformation from nonmagnetic metallic to a magnetic semiconductor is a key requirement for materials to be used as spintronic materials. Thus, these results may shed light on designing the stanene-based electronic and spintronics materials.
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Gupta, Akanksha, Rui Zhang, Pramod Kumar, Vinod Kumar, and Anup Kumar. "Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature." Magnetochemistry 6, no. 1 (March 16, 2020): 15. http://dx.doi.org/10.3390/magnetochemistry6010015.

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In recent years, many efforts have been made to develop advanced metal oxide semiconductor nanomaterials with exotic magnetic properties for modern applications w.r.t traditional analogues. Dilute magnetic semiconductor oxides (DMSOs) are promising candidates for superior control over the charge and spin degrees of freedom. DMSOs are transparent, wide band gap materials with induced ferromagnetism in doping, with a minor percentage of magnetic 3d cation to create a long-range antiferromagnetic order. Although significant efforts have been carried out to achieve DMSO with ferromagnetic properties above room temperature, it is a great challenge that still exists. However, TiO2, SnO2, ZnO and In2O3 with wide band gaps of 3.2, 3.6, 3.2 and 2.92 eV, respectively, can host a broad range of dopants to generate various compositions. Interestingly, a reduction in the size of these binary oxides can induce ferromagnetism, even at room temperature, due to the grain boundary, presence of defects and oxygen vacancies. The present review provides a panorama of the structural analysis and magnetic properties of DMSOs based on binary metal oxides nanomaterials with various ferromagnetic or paramagnetic dopants, e.g., Co, V, Fe and Ni, which exhibit enhanced ferromagnetic behaviors at room temperature.
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39

Seo, Junho, Duck Young Kim, Eun Su An, Kyoo Kim, Gi-Yeop Kim, Soo-Yoon Hwang, Dong Wook Kim, et al. "Nearly room temperature ferromagnetism in a magnetic metal-rich van der Waals metal." Science Advances 6, no. 3 (January 2020): eaay8912. http://dx.doi.org/10.1126/sciadv.aay8912.

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In spintronics, two-dimensional van der Waals crystals constitute a most promising material class for long-distance spin transport or effective spin manipulation at room temperature. To realize all-vdW-material–based spintronic devices, however, vdW materials with itinerant ferromagnetism at room temperature are needed for spin current generation and thereby serve as an effective spin source. We report theoretical design and experimental realization of a iron-based vdW material, Fe4GeTe2, showing a nearly room temperature ferromagnetic order, together with a large magnetization and high conductivity. These properties are well retained even in cleaved crystals down to seven layers, with notable improvement in perpendicular magnetic anisotropy. Our findings highlight Fe4GeTe2 and its nanometer-thick crystals as a promising candidate for spin source operation at nearly room temperature and hold promise to further increase Tc in vdW ferromagnets by theory-guided material discovery.
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40

Wang, Ke, Hai Wang, Min Zhang, Wei Zhao, Yan Liu, and Hongbo Qin. "The Electronic and Magnetic Properties of Multi-Atom Doped Black Phosphorene." Nanomaterials 9, no. 2 (February 25, 2019): 311. http://dx.doi.org/10.3390/nano9020311.

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Recently, substitutional doping is proved to be an effective route to induce magnetism to black phosphorene for its application in spintronics. Herein, we investigate the thermodynamic stability, electronic and magnetic properties of doped black phosphorene with multi Al or Cl atoms using first-principles calculations. We find these doped phosphorenes are thermodynamically stable at 0 K and the stability first improves and then deteriorates with the number of dopant atom increasing. Corresponding to the variety of stability, the amount of electrons transferred between impurity and neighboring phosphorus atoms also first increase and then reduce. However, the band gap of Al-doped phosphorene reduces monotonically from 0.44 eV to 0.13 eV while that of Cl-doped phosphorene first decreases from 0.10 eV to 0 and then becomes flat, which is a result of the impurity levels emerging and splitting. Besides, in doped phosphorenes with an even number of impurity atoms, the antiferromagnetic order is favored by energy. Through computing the magnetic moment and spin distribution, we further confirm the antiferromagnetic order existing only in the doped phosphorenes with two and four Cl atoms. These results may provide some help for future applications of black phosphorene in spintronics.
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41

Jin, Cui, Jing Shang, Xiao Tang, Xin Tan, Sean C. Smith, Chengwang Niu, Ying Dai, and Liangzhi Kou. "Enhanced stability and stacking dependent magnetic/electronic properties of 2D monolayer FeTiO3 on a Ti2CO2 substrate." Journal of Materials Chemistry C 7, no. 48 (2019): 15308–14. http://dx.doi.org/10.1039/c9tc04979g.

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With large magnetic moments, complete spin-polarization, high TC, and tunable magnetism characters, 2D FeTiO3/Ti2CO2 is proposed as an ideal material for high-performance spintronics.
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42

Rajan, P. Iyyappa, S. Mahalakshmi, and Sharat Chandra. "Occurrence of spintronics behaviour (half-metallicity, spin gapless semiconductor and bipolar magnetic semiconductor) depending on the location of oxygen vacancies in BiFe 0.83 Ni 0.17 O 3." Royal Society Open Science 4, no. 6 (June 2017): 170273. http://dx.doi.org/10.1098/rsos.170273.

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The current communication signifies the effect of oxygen vacancies (OVs) both qualitatively and quantitatively in multiferroic BiFe 0.83 Ni 0.17 O 3 by an in-depth atomic-level investigation of its electronic structure and magnetization properties, and these materials have a variety of applications in spintronics, optoelectronics, sensors and solar energy devices. Depending on the precise location of OVs, all the three types of spintronic material namely half-metallic, spin gapless semiconductor and bipolar magnetic conductor have been established in a single material for the first time and both super-exchange and double-exchange interactions are possible in accordance with the precise location of OVs. We have also calculated the vacancy formation energies to predict their thermodynamic stabilities. These results can highlight the impact and importance of OVs that can alter the multiferroic properties of materials.
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43

Zhao, Didi, Chenggong Zhang, Changwen Zhang, Weixiao Ji, Shengshi Li, and Peiji Wang. "Magnetic tuning in a novel half-metallic Ir2TeI2 monolayer." Journal of Semiconductors 43, no. 5 (May 1, 2022): 052001. http://dx.doi.org/10.1088/1674-4926/43/5/052001.

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Abstract A two-dimensional (2D) high-temperature ferromagnetic half-metal whose magnetic and electronic properties can be flexibly tuned is required for the application of new spintronics devices. In this paper, we predict a stable Ir2TeI2 monolayer with half-metallicity by systematical first-principles calculations. Its ground state is found to exhibit inherent ferromagnetism and strong out-of-plane magnetic anisotropy of up to 1.024 meV per unit cell. The Curie temperature is estimated to be 293 K based on Monte Carlo simulation. Interestingly, a switch of magnetic axis between in-plane and out-of-plane is achievable under hole and electron doping, which allows for the effective control of spin injection/detection in such 2D systems. Furthermore, the employment of biaxial strain can realize the transition between ferromagnetic and antiferromagnetic states. These findings not only broaden the scope of 2D half-metal materials but they also provide an ideal platform for future applications of multifunctional spintronic devices.
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44

Kupriyanova, G., A. Zyubin, A. Astashonok, A. Orlova, and E. Prokhorenko. "The magnetic-resonance properties study of nanostructures for spintronics by FMR." Journal of Physics: Conference Series 324 (October 21, 2011): 012012. http://dx.doi.org/10.1088/1742-6596/324/1/012012.

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45

Tran, T. Lan Anh, Deniz Çakır, P. K. Johnny Wong, Alexei B. Preobrajenski, Geert Brocks, Wilfred G. van der Wiel, and Michel P. de Jong. "Magnetic Properties of bcc-Fe(001)/C60 Interfaces for Organic Spintronics." ACS Applied Materials & Interfaces 5, no. 3 (January 23, 2013): 837–41. http://dx.doi.org/10.1021/am3024367.

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46

LIU, GANG, BIN HOU, RU ZHANG, and GAO TAO. "ELECTRONIC AND MAGNETIC PROPERTIES OF (Mn, C)-CODOPED GaN." Modern Physics Letters B 28, no. 03 (January 23, 2014): 1450017. http://dx.doi.org/10.1142/s0217984914500171.

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First-principle calculations have been performed to systematically investigate the electronic and magnetic properties of Mn / C -codoped GaN . The formation energy of five different configurations is studied and the ground state is demonstrated to be ferromagnetic ordering. The ferromagnetic stabilization is largely due to the strong p–d hybridization among Mn 3d, C 3d and N 2p states. Our calculations show that the GaN codoped with Mn and C has a stable FM ground state with a high Curie temperature. These results are positive to design the dilute magnetic semiconductors with codopants in spintronics applications.
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47

Abbes, Omar, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, and Vinh Le Thanh. "Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate." Defect and Diffusion Forum 323-325 (April 2012): 439–44. http://dx.doi.org/10.4028/www.scientific.net/ddf.323-325.439.

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An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact that in a magnetic layer, the electrical current can be spin polarized. To fabricate such components, a material whose electronic properties depend on its magnetic state is needed. The Mn-Ge system presents a lot of phases with different magnetic properties, which can be used for spintronics. The most interesting phase among the Mn-Ge system is Mn5Ge3 because of its stability at high temperatures, its Curie temperature which is close to room temperature and its ability of injecting spin-polarized electrons into semiconductors. In this paper, we have combined Reflection High-Energy Electron Diffraction (RHEED) and X-ray Diffraction (XRD), to study the sequence of formation of MnxGey phases during reactive diffusion of both a 50 nm and a 210 nm thick Mn films deposited by Molecular-Beam Epitaxy (MBE) on Ge (111).
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48

Li, Feifei, Jing Huang, Jianing Wang, and Qunxiang Li. "Spin-Transport Tuning of Individual Magnetic Mn-Salophen Molecule via Chemical Adsorption." Molecules 24, no. 9 (May 6, 2019): 1747. http://dx.doi.org/10.3390/molecules24091747.

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Control over spin states at the single molecule level is a key issue in the emerging field of molecular spintronics. Here, we explore the chemical adsorption effect on the magnetic and spin-transport properties of individual magnetic molecule by performing extensive density functional theory calculations in combining with non-equilibrium Green’s function method. Theoretical results clearly reveal that the molecular magnetic moment of Mn-salophen can be effectively tuned by adsorbing F and CO on the central Mn cation, while the adsorbed NO molecule quenches the molecular magnetic moment. Without chemical adsorption, the currents through Mn-salophen molecular junction just show a little distinction for two spin channels, which agrees well with previous investigation. Remarkably, the conductive channel can be switched from the spin-up electrons to the spin-down electrons via adsorbing F and CO, respectively, and the corresponding two Mn-salophen molecular junctions with chemical modifications display nearly perfect spin-filtering effect. The observed spin switch and the predicted spin-filtering effect via chemical adsorption indicates that Mn-salophen holds potential applications in molecular spintronic devices.
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49

GAREEVA, Z. V., A. M. TROCHINA, and SH T. GAREEV. "MAGNETOELECTRIC EFFECTS AND NEW SPINTRONICS LOGIC DEVICES." Izvestia Ufimskogo Nauchnogo Tsentra RAN, no. 1 (March 31, 2023): 65–70. http://dx.doi.org/10.31040/2222-8349-2023-0-1-65-70.

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The paper discusses new logic spintronic devices and the prospects for the use of perovskite-type multiferroics as working elements of magnetoelectric components. The principle of operation of the considered logical devices is based on the use of two components - a magnetoelectric, in which the magnetic state is recorded due to energy-efficient magnetoelectric interaction, and a spin-orbital component, in which information is read out based on the conversion of spin into charge due to the spin-orbital interaction of electrons; both components are interconnected by a nanoelectrode. When designing new logic spintronic devices, it is necessary to take into account the effectiveness of the mechanisms of ME interactions; features of spin - polarized currents and associated torques influencing magnetic moments; as well as other factors affecting the speed of switching magnetic states and the sensitivity of the device to external agents. Multiferroic materials that are promising for use as elements of ME components of new logic devices must meet a number of requirements, the most significant of which are the magnitude of the magnetoelectric coupling coefficient and the temperature at which ME effects occur. The paper considers representatives of multiferroics with a perovskite structure that meet these conditions, to some extent partially, these are high-temperature multiferroic bismuth ferrite (BiFeO3) and Ruddlesden-Popper structures, in which high-temperature ferroelectric effects are already realized and under certain conditions an ME effect is possible. The crystal structure of these compounds is considered, and the role of crystallographic distortions responsible for the manifestation of magnetoelectric properties is analyzed. Expressions are obtained for the tensor of the magnetoelectric effect as functions of magnetic order parameters, and the fundamental possibility of realizing ME effects in Ruddlesden-Popper structures containing magnetic cations is shown.
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50

Jiang, Ying, and Yong Wang. "Mn-Rich Nanostructures inGe1-xMnx: Fabrication, Microstructure, and Magnetic Properties." Advances in Materials Science and Engineering 2012 (2012): 1–18. http://dx.doi.org/10.1155/2012/726921.

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Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS) system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainlyGe1-xMnx), which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magneticGe1-xMnxbulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.
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