Academic literature on the topic 'Magnetic materials with perpendicular magnetic anisotropy'
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Journal articles on the topic "Magnetic materials with perpendicular magnetic anisotropy"
Sbiaa, R., H. Meng, and S. N. Piramanayagam. "Materials with perpendicular magnetic anisotropy for magnetic random access memory." physica status solidi (RRL) - Rapid Research Letters 5, no. 12 (October 4, 2011): 413–19. http://dx.doi.org/10.1002/pssr.201105420.
Full textKang, Kyongha. "MnBi nanoparticles with perpendicular magnetic anisotropy." Journal of Alloys and Compounds 439, no. 1-2 (July 2007): 201–4. http://dx.doi.org/10.1016/j.jallcom.2006.04.079.
Full textEn-Yong, Jiang, Wang Zhong-Jie, and Li Jen-e. "Perpendicular magnetic anisotropy of NdFe films." Journal of Physics: Condensed Matter 2, no. 27 (July 9, 1990): 6089–92. http://dx.doi.org/10.1088/0953-8984/2/27/014.
Full textKijima-Aoki, Hanae, Yasushi Endo, Takamichi Miyazaki, Tsutomu Nojima, Kenji Ikeda, Nobukiyo Kobayashi, Shigehiro Ohnuma, and Hiroshi Masumoto. "Shape effect of Co nanoparticles on the electric and magnetic properties of Co–SiO2 nanogranular films." AIP Advances 12, no. 3 (March 1, 2022): 035229. http://dx.doi.org/10.1063/9.0000310.
Full textChing-Ming Lee, Lin-Xiu Ye, Jia-Mou Lee, Tung-Hsien Hsieh, Jhih-Wei Syu, Wen-Jaun Chen, Chao-Yuan Huang, and Te-Ho Wu. "Magnetic Properties of Ultrathin TbFeCo Magnetic Films With Perpendicular Magnetic Anisotropy." IEEE Transactions on Magnetics 45, no. 10 (October 2009): 4023–26. http://dx.doi.org/10.1109/tmag.2009.2024887.
Full textSbiaa, R., H. Meng, and S. N. Piramanayagam. "ChemInform Abstract: Materials with Perpendicular Magnetic Anisotropy for Magnetic Random Access Memory." ChemInform 44, no. 14 (March 20, 2013): no. http://dx.doi.org/10.1002/chin.201314222.
Full textLodder, J. Cock. "Magnetic Microstructures of Perpendicular Magnetic-Recording Media." MRS Bulletin 20, no. 10 (October 1995): 59–63. http://dx.doi.org/10.1557/s0883769400045383.
Full textAmoroso, Danila, Paolo Barone, and Silvia Picozzi. "Interplay between Single-Ion and Two-Ion Anisotropies in Frustrated 2D Semiconductors and Tuning of Magnetic Structures Topology." Nanomaterials 11, no. 8 (July 21, 2021): 1873. http://dx.doi.org/10.3390/nano11081873.
Full textJaworowicz, J., N. Vernier, J. Ferré, A. Maziewski, D. Stanescu, D. Ravelosona, A. S. Jacqueline, C. Chappert, B. Rodmacq, and B. Diény. "Magnetic logic using nanowires with perpendicular anisotropy." Nanotechnology 20, no. 21 (May 5, 2009): 215401. http://dx.doi.org/10.1088/0957-4484/20/21/215401.
Full textPashko, Anna G., R. G. Bareev, V. Osadchenko, N. Lobasheva, and G. S. Kandaurova. "Dynamic Chains of Spiral Magnetic Domains." Solid State Phenomena 168-169 (December 2010): 227–29. http://dx.doi.org/10.4028/www.scientific.net/ssp.168-169.227.
Full textDissertations / Theses on the topic "Magnetic materials with perpendicular magnetic anisotropy"
Rasin, Boris. "Perpendicular magnetic anisotropy in ion beam sputtered Co/Ni multilayers." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/58071.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (p. 34-35).
Co/Ni multilayers display perpendicular magnetic anisotropy and have applications in magnetic devices that could lead to a large increase in the density of magnetic storage. Co/Ni 10-(2 Å Co/ 8Å Ni) and 10-(2 Å Co/ 4 Å Ni) multilayers were deposited with ion beam sputtering on either ion beam sputtered copper or direct current magnetron sputtered gold buffer layers of various thicknesses. The effect of the the roughness and the degree of (1 1 1) texture of the buffer layers and the multilayers on the perpendicular magnetic anisotropy of the deposited multilayers was examined. In addition the effect of the deposition method used to fabricate the samples, ion beam sputtering, was analyzed. The magnetic behavior of the multilayers was examined with alternating gradient magnetometry and vibrating sample magnetometery, the structure of the buffer layers and the multilayers was characterized with X-ray diffraction, and the roughness of the surface of the multilayers was characterized with atomic force microscopy. None of the deposited films showed perpendicular magnetic anisotropy and instead showed parallel magnetic anisotropy which was found to have occurred for every sample due to either a low degree of (1 1 1) texture in the buffer layer and the Co/Ni multilayer, a too high degree of roughness in the buffer layer and the Co/Ni multilayer or a combination of these two factors. In addition it was hypothesized that as the samples were deposited with sputtering, diffusion and alloying at the multilayer interfaces may have contributed to the multilayers having parallel magnetic anisotropy instead of perpendicular magnetic anisotropy.
by Boris Rasin.
S.B.
Niesen, Alessia [Verfasser]. "Heusler materials with perpendicular magnetic anisotropy. Thin films for spintronics / Alessia Niesen." Bielefeld : Universitätsbibliothek Bielefeld, 2019. http://d-nb.info/1183256590/34.
Full textGottwald, Matthias. "Nouveaux systèmes modèles à aimantation perpendiculaire pour l'étude des effets de transfert de spin." Thesis, Nancy 1, 2011. http://www.theses.fr/2011NAN10053/document.
Full textSpin transfer torque effects have become a research subject of high interest during the last 15 years. However, in order to probe the fundamental physics of spin transfer torque model systems are needed. For a model system it must be as simple as possible to tune the significant parameters (magnetic and structural). In this work we analyze the suitability of two materials for this need. The studied materials are amorphous Co1-xTbx alloys elaborated by sputtering and MBE grown [Co/Ni](111) superlattices. Both systems show perpendicular magnetic anisotropy (PMA), which provides a uniaxial anisotropy to the system. This anisotropy and the magnetization, which are significant parameters for many models on spin transfer torque, can be tuned in a large range of values. The origin of this PMA is discussed. The domain structure is analyzed and transport measurements are interpreted. In addition we show a strong spin polarization of the electrons close to the Fermi level by doing photoemission experiments. A small intrinsic Gilbert damping parameter [alpha] is found by FMR spectroscopy. We conclude that both materials are good candidates to be used as model systems for spin transfer torque
Kane, Margaret Marie. "Fabrication and characterization of perpendicular magnetic anisotropy thin-film CoCrPt grown on a Ti underlayer." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/98555.
Full textThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 57-58).
CoCrPt has potential applications as a memory storage technology because of its perpendicular magnetic anisotropy (PMA) characteristics. An underlayer can be used to ensure the out-of-plane magnetization required for PMA functionalities. Ti, with a lattice constant of a = 2.95 Å can be used to encourage uniaxial c-axis growth in CoCrPt (lattice constant a ~/= 2.55 Å, dependent on exact composition). In this report, varying thicknesses of Ti (t = 0, 20, 40, 60, 70, 80, 90, 100nm) and CoCrPt (t = 50, 75, 90, 100, 125, 150nm) were sputtered onto naturally oxidized silicon substrates. Using various characterization methods, these films were investigated in order to better understand the system. The exact composition of the CoCrPt films was found to be approximately Co₆₀.₂Cr₁₆.₄Pt₂₃.₄, with a Curie temperature of about 600 °C. The addition of a Ti underlayer resulted in an increase in coercivity to approximately 1250 Oe for t > 60nm. However, switching field distribution and saturation magnetization appear to be independent of underlayer thickness. All samples show evidence of out-of-plane growth and the roughness of the films increases until it also plateaus at about t = 60nm. When CoCrPt thickness is varied on a constant Ti underlayer, the PMA properties of the materials decrease with increasing thickness due to increased disorder and potential relaxation of the lattice in thicker films. The switching field distribution shows a significant increase, implying that a thicker film has a more homogenous distribution of grain sizes. XRD peaks confirm out-of-plane growth and suggest a trend of increasing c lattice constant as the thickness of the film increases.
by Margaret Marie Kane.
S.B.
Zhang, Jinshuo Ph D. Massachusetts Institute of Technology. "Geometrical control of domain walls and the study of domain wall properties of materials with perpendicular magnetic anisotropy." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/108968.
Full textCataloged from PDF version of thesis.
Includes bibliographical references (pages 155-168).
Magnetic based devices such as hard disk drives (HDDs) are widely used in the computer industry because of their high memory capacity, non-volatility and low cost compared to semiconductor-based solid state disk drives (SSDs). However, they also suffer from low energy efficiency and low speed, due to the requirement for mechanical motion in order to access the data. In my thesis, I will first give a brief introduction to the motivation and background in the study of magnetic domain walls (DWs), which have attracted great attention due to their ability to be moved by field and/or current and corresponding potential applications in high speed memory or logic devices. I will then discuss how to geometrically control the behaviors of DWs in a ferromagnetic nanowire. I will first discuss how natural geometry distortions such as edge tapering from sputtering on an undercut resist profile and wire width variation from the patterning process would affect DW behavior, including static configurations, stability and dynamics under current pulsing. I will then discuss how similar geometrical effects will affect the properties of materials with perpendicular magnetic anisotropy (PMA). The same geometry modulation will have different effects depending on the origin of the PMA. Such results are confirmed by observing the magnetic reversal process. Besides the study on 180DWs, we will then discuss the field and current effects on 360 degree DWs (360DWs), which have many unique properties compared to 180DWs and are an alternative candidate for DW based devices. I will then discuss control of 360DW behavior by designing a geometrical heterostructure. We have found that by utilizing the asymmetric Oersted field originated from the heterostructure, we are able to control the 360DWs depending on their chirality. The structure can function as a 360DW chirality filter, which provides extra freedom in DW-based applications. These studies were conducted by a combination of micromagnetic simulations and experimental implementations. Techniques being used including OOMMF micromagnetic simulations, Comsolfinite element simulations, electrical measurements, magnetic force microscopy and other characterization techniques.
by Jinshuo Zhang.
Ph. D.
Wismayer, Matthew P. "Small angle neutron scattering studies of magnetic recording media." Thesis, St Andrews, 2008. http://hdl.handle.net/10023/471.
Full textNguyen, Ngoc-Minh. "Propagation de parois magnétiques dans des films et des pistes à anisotropie magnétique perpendiculaire." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112356.
Full textThis work is focused on the study of magnetic domain wall propagation mechanisms in the thin films and wires based on materials with perpendicular magnetic anisotropy which are promissing for the non-volatile magnetic memory of ultra high density. I’m interested in the influence of structural defects on the mechanisms of domain wall propagation by using the Kerr microscopy technique and the transport measurements. Three important results were obtained: (1) In the spin valve structure of CoNi/Cu/CoNi, a strong influence of the dipolar magnetic field induced by the hard layer can generate a parasitic nucleation in the soft layer and create an asymmetric domain wall propagation driven by a spin polarized current. I also demonstrated that in sub-50nm wires, the nature of magnetization reversal process is the multiple nucleation events because of strong pinning centers that hinder the domain wall motion; (2) By observing the magnetic domain geometry et studying the creep law, I have pointed out that in the CoNi-CoFeB multilayers and the crystallized Ta-CoFeB-MgO multilayers, the structural defect density is low and the propagation fields can be reduced; (3) I found a spin-transfer effect with low current density (≈5x1011 A/cm2) in CoNi-CoFeB wires. I also demonstrated that the Oersted field can strongly influence the domain wall motion, especially in the material with low propagation field. Finally, in the Ta-CoFeB-MgO wires, I could measure a wide range of domain wall velocity and I show that the domain wall can move at a very low propagation field (0.1mT)
Marcon, Paul. "Calcul ab-initio des propriétés physiques d'hétérostructures associant des matériaux ferromagnétiques à anisotropie magnétique perpendiculaire et des dichalcogénures de métaux de transition." Electronic Thesis or Diss., Toulouse 3, 2023. http://www.theses.fr/2023TOU30273.
Full textThe ability to synthesize heterostructures made up of 2D materials provides significant opportunities for improving current spintronic components or developing new devices. Thus, the control and deep understanding of the physical properties of these systems become a critical technological challenge. During this thesis, we examined heterostructures composed of transition metal dichalcogenide (TMDC) monolayers and ferromagnetic crystals exhibiting perpendicular magnetic anisotropy, using ab initio calculations based on density functional theory (DFT). We focus on three main goals: (i) understanding how to use magnetic proximity to lift valley degeneracy and quantify the valley Zeeman effect; (ii) assessing the possibility of injecting spin-polarized electron gas into specific valleys of the TMDC sheet; (iii) investigating the impact of proximity on spin-orbit coupling in the TMDC sheet and on the Rashba and Dresselhaus phenomena in these systems. We first studied multilayers with an electrode made up of a metal and a non-2D insulating barrier. In the Fe/MgO/MoS2 system, we computed that a spontaneous electron transfer occurs from the Fe layer to the MoS2 monolayer, leading to the formation of a non-spin-polarized electron gas. We established a model explaining the competition between Rashba and Dresselhaus-type spin-orbit effects and magnetic proximity effect on the MoS2 valence bands: This model allowed us to show that proximity effect predominate for thin MgO (<0.42 nm) and tend to disappear in favor of spin-orbit effects for thicker layers (> 1.06 nm). We predicted that stronger spin-orbit effects can be achieved by replacing the Fe electrode with a non-magnetic V electrode. To boost the magnetic proximity effects, we finally decided to study [Co1Ni2]n/h-BN/WSe2 heterostructures, in which [Co1Ni2]n is a superlattice with perpendicular magnetic anisotropy, and h-BN is a two-dimensional insulator. For this system, we predict that it could be possible to have a spin polarization of the valleys at the K and K' points. Ultimately, we explored the unique properties of the van der Waals heterostructure Graphene/CrI3/WSe2, where the magnetic electrode is also replaced by 2D materials
Kugler, Zoe [Verfasser]. "Perpendicular anisotropy in magnetic tunnel junctions / Zoe Kugler." Bielefeld : Universitätsbibliothek Bielefeld, Hochschulschriften, 2012. http://d-nb.info/1023862891/34.
Full textMoutafis, Christoforos. "Magnetic elements with perpendicular anisotropy : statics and dynamics of magnetic bubbles and vortices." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611377.
Full textBooks on the topic "Magnetic materials with perpendicular magnetic anisotropy"
F, Martín-Hernández, and Geological Society of London, eds. Magnetic fabric: Methods and applications. London: Geological Society, 2004.
Find full textWeinberger, P. Magnetic anisotropies in nanostructured matter. Boca Raton: Taylor & Francis, 2009.
Find full textMazgaj, Witold. Wyznaczanie rozkładu pola magnetycznego w materiałach magnetycznie miękkich z uwzględnieniem histerezy i anizotropii: Calculation of magnetic field distribution in soft magnetic materials taking into account hysteresis and anisotropy = [Raschet raspredelenii︠a︡ magnitnogo poli︠a︡ v magnitno-mi︠a︡gkikh materialakh s uchetom gisterezisa i anizotropii]. Kraków: Wydawnictwo PK, 2010.
Find full textA, Serdi͡ukov, ed. Electromagnetics of bi-anisotropic materials: Theory and applications. Australia: Gordon and Breach Science, 2001.
Find full textEriksson, Olle, Anders Bergman, Lars Bergqvist, and Johan Hellsvik. Applications of Density Functional Theory. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198788669.003.0003.
Full textal, et. Magnetic Fabric: Methods and Applications. Geological Society of London, 2005.
Find full textWeinberger, P. Magnetic Anisotropies in Nanostructured Matter. Taylor & Francis Group, 2008.
Find full textWeinberger, P., and P. Weinberger. Magnetic Anisotropies in Nanostructured Matter. Taylor & Francis Group, 2008.
Find full textWeinberger, P. Magnetic Anisotropies in Nanostructured Matter. Taylor & Francis Group, 2008.
Find full textMagnetic Anisotropies in Nano-Structured Matter. Chapman & Hall/CRC, 2008.
Find full textBook chapters on the topic "Magnetic materials with perpendicular magnetic anisotropy"
Kulkarni, Prabhanjan, Somnath Bhattacharyya, and Prasanta Chowdhury. "Perpendicular Magnetic Anisotropy in Magnetic Thin Films." In Advances in Magnetic Materials, 581–626. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2017. http://dx.doi.org/10.1201/9781315371573-10.
Full textXiao, John Q., A. Gavrin, and C. L. Chien. "Perpendicular Anisotropy and Domain Structure in Granular Magnetic Solids." In Magnetic Hysteresis in Novel Magnetic Materials, 505–9. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5478-9_52.
Full textRavelosona, Dafiné. "Dynamics of Domain Wall Motion in Wires with Perpendicular Anisotropy." In Nanoscale Magnetic Materials and Applications, 185–217. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-0-387-85600-1_7.
Full textSzewczyk, Roman. "Explicitness of Parameters Identification in Anhysteretic Curve of Magnetic Materials with Strong Perpendicular Anisotropy." In Advances in Intelligent Systems and Computing, 664–71. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-13273-6_62.
Full textBuschow, K. H. J., and F. R. de Boer. "Magnetic Anisotropy." In Physics of Magnetism and Magnetic Materials, 97–103. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/0-306-48408-0_11.
Full textPoulopoulos, P., M. Angelakeris, D. Niarchos, and N. K. Flevaris. "Instability of Perpendicular-Magnetization Hysteresis Features in Pt-Ni and Pd-[CoPd] Multilayers." In Magnetic Hysteresis in Novel Magnetic Materials, 533–36. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5478-9_57.
Full textFalco, Charles M., Brad N. Engel, and J. M. Slaughter. "Magnetic Anisotropy of Ultra-Thin Films and Multilayers." In Magnetic Hysteresis in Novel Magnetic Materials, 479–83. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5478-9_49.
Full textCullen, J. R. "Random Anisotropy in Magnetic Materials." In NATO ASI Series, 367–76. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2590-9_41.
Full textNikitin, S. A., T. I. Ivanova, and I. S. Tereshina. "Magnetic Phase Transitions and Magnetic Crystalline Anisotropy in SmFe11-xCoxTi Compounds." In Magnetic Hysteresis in Novel Magnetic Materials, 663–67. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5478-9_72.
Full textSkomski, Ralph, Priyanka Manchanda, and Arti Kashyap. "Anisotropy and Crystal Field." In Handbook of Magnetism and Magnetic Materials, 1–83. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-63101-7_3-1.
Full textConference papers on the topic "Magnetic materials with perpendicular magnetic anisotropy"
Cha, In Ho, Yong Jin Kim, Gyu Won Kim, and Young Keun Kim. "Perpendicular Magnetic Anisotropy of Non-Magnetic Materials/Ferromagnetic Materials/MgO Trilayer." In 2016 International Conference of Asian Union of Magnetics Societies (ICAUMS). IEEE, 2016. http://dx.doi.org/10.1109/icaums.2016.8479769.
Full textEl-Ghazaly, A., N. Sato, R. M. White, and S. X. Wang. "Material optimization with perpendicular anisotropy for closed-loop magnetic inductors." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157049.
Full textHirayama, E., S. Kanai, K. Sato, M. Yamanouchi, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno. "In-plane Anisotropy of a CoFeB-MgO Magnetic Tunnel Junction with Perpendicular Magnetic Easy Axis." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-12-6.
Full textBennett, Wayne R., Donald C. Person, and Charles M. Falco. "Magnetic Properties and Structural Characterization of Fe/Tb Multilayers*." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/ods.1987.thc3.
Full textYoo, Jin-Hyeong, James B. Restorff, Marilyn Wun-Fogle, and Alison B. Flatau. "Induced Magnetic Anisotropy in Stress-Annealed Galfenol Laminated Rods." In ASME 2008 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. ASMEDC, 2008. http://dx.doi.org/10.1115/smasis2008-636.
Full textMiura, S., H. Honjo, K. Kinoshita, K. Tokutome, H. Koike, S. Ikeda, T. Endoh, and H. Ohno. "Properties of Perpendicular-Anisotropy Magnetic Tunnel Junctions Fabricated over The Cu Via." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.a-6-3.
Full textPan, C. T., S. C. Shen, and H. P. Chou. "Design and Fabrication of High Power Electromagnetic Microactuator With Perpendicular Magnetic Anisotropy." In ASME 2001 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/imece2001/mems-23827.
Full textMiura, S., H. Honjo, K. Tokutome, N. Kasai, S. Ikeda, T. Endoh, and H. Ohno. "Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process." In 2013 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2013. http://dx.doi.org/10.7567/ssdm.2013.ps-12-11.
Full textHirayama, S., S. Kasai, and S. Mitani. "Modeling and Evaluation of Interface Perpendicular Magnetic Anisotropy in Ta/NiFe/Pt Trilayers." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.ps-12-10.
Full textItoh, Y., and T. Suzuki. "Magnetic and Magneto-optical Properties of TbFeCo/Pt and TbFeCo/NdCo Multilayers." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/ods.1998.pdp.2.
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