Relevant bibliographies by topics / Magnesium oxide thin film

Academic literature on the topic 'Magnesium oxide thin film'

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Published: 11 March 2023

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Journal articles on the topic "Magnesium oxide thin film"

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Watazu, Akira, and Tsutomu Sonoda. "Mechanical Property of Magnesium Alloy Surface with Dense Oxide." Materials Science Forum 941 (December 2018): 1827–32. http://dx.doi.org/10.4028/www.scientific.net/msf.941.1827.

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Low Al single-phase magnesium alloy surfaces with dense magnesium oxide films were uniformly formed. The films were deposited with a radio frequency magnetron sputtering process with a planar magnetron sputtering system. The thickness of deposited magnesium oxide thin films was around 240 nm. According to the XRD results, a magnesium oxide phase film was formed on the substrate. The surface was uniform, and no cracks or exfoliation were observed. The deposited magnesium oxide film did not have any cracks or pores, and the surface of the sample was covered by magnesium oxide. The hardness of the magnesium oxide-coated magnesium alloy reached around Hv200, while that of the uncoated Mg-alloy was around Hv80. Moreover, the Vickers indenter under a 10-mN load indented the magnesium alloy substrate coated with the magnesium oxide film to a depth of around 640 nm, while that for the uncoated magnesium alloy substrate was around 620 nm. Meanwhile, the elasticity value for the magnesium alloy substrate coated with magnesium oxide film was around 5.3×1010Pa, while that of the uncoated magnesium alloy substrate was around 4.2×1010Pa.
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Choi, Hyungsoo, and Soontaik Hwang. "Sol-gel-derived Magnesium Oxide Precursor for Thin-film Fabrication." Journal of Materials Research 15, no. 4 (April 2000): 842–45. http://dx.doi.org/10.1557/jmr.2000.0120.

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Magnesium oxide (MgO) precursors were prepared by the sol-gel method using magnesium acetate. The reaction products and intermediates obtained during the sol-gel processing of magnesium acetate under various conditions were analyzed thermally and spectroscopically. No organic groups were detected by infrared spectroscopy after heat treating the reaction products at 400 °C. A large exothermic differential thermal analysis peak below 400 °C demonstrated the oxidation of organic moieties in each product. It was found that the presence of an acid catalyst was crucial during the sol-gel processing of magnesium acetate to produce sols suitable for depositing MgO films. The MgO films fabricated on Si(111) substrates using the precursor sol showed (200) orientation regardless of the presence of surface oxides on the substrates.
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Anuradha, B., and C. Sanjeeviraja. "Review on Magnesium Indium Oxide Thin Films: Material Properties and Preparation Techniques." Materials Science Forum 699 (September 2011): 39–66. http://dx.doi.org/10.4028/www.scientific.net/msf.699.39.

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Thin films of pure metals, alloys, semiconductors and organic compounds are indispensable tools in industry, which anticipate and recognize novel functional materials for the development of microelectronics. Thin film technology makes it possible to deposit ultra-thin functional material layers on a base substrate to form many active and passive micro-miniaturized components and devices such as solar cells, radiation sources, sensors, magnetic devices, bolometers, switching devices, photodiodes, digital versatile disk (DVD), flat panel display etc. Thus thin films play a dominant role in modern technology like opto-electronics, microelectronics etc. The study of surfaces and thin films overlaying them has been carried out for many years. But recently, it has become increasingly important in several fields of study. Thin film properties such as optical, electrical and magnetic properties are very much interested in research areas. Thin film properties are strong dependent on the method of deposition, the substrate materials, the substrate temperature, the rate of deposition, the background pressure etc. Specific application in modern technology demand tailor made film properties, for example, high optical reflection / transmission, hardness. adhesion, nonporosity, high mobility of charge carriers / insulating properties and chemical inertness, which are possible with a selection of suitable functional materials and deposition techniques. Various techniques used to deposit thin films and the material properties of MIO and its crystal structure are summarized with our results.
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Watazu, Akira, and Tsutomu Sonoda. "Deformation Property of Dense Oxide Coated Magnesium Alloy Surface." Materials Science Forum 1016 (January 2021): 1591–96. http://dx.doi.org/10.4028/www.scientific.net/msf.1016.1591.

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Dense oxide coated AZ 31 magnesium alloy surfaces were uniformly formed using a radio frequency magnetron sputtering method. The magnesium oxide thin film thickness was about 240 nm. XRD results of the film indicated that film of magnesium oxide single phase was deposited. The surface of the film was uniform and no crack was observed. The Vickers hardness measured by the nanoindenter was about Hv80 and Hv200 for the AZ31 substrate and the sample coated with the thin film, respectively. The dynamic hardness of the AZ31 substrate and the sample coated with the thin film were almost the same. In the curve at the time of pressurization, a step was observed in the sample coated with the thin film. On the other hand, many steps were observed in the data curve for the thin film deposited on the glass substrate.
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Abdullah-Hamead, Alaa Aladdin. "Advanced Structured of MgO Thin Film for Bio Applications." Materials Science Forum 1002 (July 2020): 319–30. http://dx.doi.org/10.4028/www.scientific.net/msf.1002.319.

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Extensive efforts to further promoting the Anti-Bacteria and structural properties of thin films to reach reliability and possibility of commercialization, the chemical Tri-metal oxide component was verification as Anti-Bacteria factor in this paper. Pure and mixed thin films of magnesium oxide MgO was prepared by evaporation assisted laser Nedmyum - YAG pulse Nd: YAG laser system, MgO enhanced by adding Ti and Se, at (0.5, 1, 1.5 and 2%) by weight percentage. After that, calcination is done at 400 °C for 30 min. Structural and anti-bacterial growth inspections were performed. Experimental results showed that structural properties have improved significantly with the development of a MgO thin films with tri-metal oxide; Magnesium titanium oxide Mg2TiO4 and Magnesium selenate MgSeO4 phases. Moreover, there has been an enhancement in anti-bacteria properties, which makes these thin films more reliable for protection against bacteria.
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Alaani, Mohammed A. Razooqi, Prakash Koirala, Adam B. Phillips, Geethika K. Liyanage, Rasha A. Awni, Dhurba R. Sapkota, Balaji Ramanujam, et al. "Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics." Materials 14, no. 19 (September 28, 2021): 5649. http://dx.doi.org/10.3390/ma14195649.

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Motivated by their utility in CdTe-based thin film photovoltaics (PV) devices, an investigation of thin films of the magnesium-zinc oxide (MgxZn1−xO or MZO) alloy system was undertaken applying spectroscopic ellipsometry (SE). Dominant wurtzite phase MZO thin films with Mg contents in the range 0 ≤ x ≤ 0.42 were deposited on room temperature soda lime glass (SLG) substrates by magnetron co-sputtering of MgO and ZnO targets followed by annealing. The complex dielectric functions ε of these films were determined and parameterized over the photon energy range from 0.73 to 6.5 eV using an analytical model consisting of two critical point (CP) oscillators. The CP parameters in this model are expressed as polynomial functions of the best fitting lowest CP energy or bandgap E0 = Eg, which in turn is a quadratic function of x. As functions of x, both the lowest energy CP broadening and the Urbach parameter show minima for x ~ 0.3, which corresponds to a bandgap of 3.65 eV. As a result, it is concluded that for this composition and bandgap, the MZO exhibits either a minimum concentration of defects in the bulk of the crystallites or a maximum in the grain size, an observation consistent with measured X-ray diffraction line broadenings. The parametric expression for ε developed here is expected to be useful in future mapping and through-the-glass SE analyses of partial and complete PV device structures incorporating MZO.
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Kim, Seong Jong, and Jeong Il Kim. "Effects of Current Density on the Formation of Anodic Oxide Films on AZ91." Materials Science Forum 510-511 (March 2006): 166–69. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.166.

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Magnesium must be surface treated to prevent corrosion, since it is a very active metal electrochemically. On anodizing, a compact film several tens of micrometers thick forms on magnesium, which imparts good corrosion resistance. The Mg-Al alloy (AZ91) was anodized in 1 M NaOH solution. The surface morphology of the anodized films was observed using scanning electron microscopy (SEM), energy-dispersive x-ray (EDX), and electrochemical methods. The effects of current density on the formation of anodic oxide films for a Mg-Al alloy in 1 M NaOH were investigated. In the anodic polarization curve, the reference corrosion potentials were far greater at 4-9 mA/cm2 than at 1 mA/cm2. The film that formed at 1 mA/cm2 was thin, suggesting that parts of the film had been dissolved or destroyed during the anodic polarization test. Corrosion resistance differed owing to concentric differences in current flow. Thick anodic oxide films were formed at higher applied currents.
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Lee, Jung-Kun, Hyun-Suk Jung, Dong-Wan Kim, Chang-Hoon Kim, and Kug Sun Hong. "Influence of Substrates on the Crystal Structure of Pulsed Laser Deposited Pb(Mg1/3Nb2/3)O3–29% PbTiO3 Thin Films." Journal of Materials Research 17, no. 5 (May 2002): 1030–34. http://dx.doi.org/10.1557/jmr.2002.0152.

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Lead magnesium niobate–lead titanate [Pb(Mg1/3Nb2/3)O3 (PMN)–PbTiO3 (PT)] films were synthesized using pulsed laser deposition, and the effect of substrates on the deposition behavior of the PMN–PT film was investigated. Phase evolution of PMN–PT thin films was found to depend significantly on the type of the substrate used during deposition. Though a mixture of pyrochlore and perovskite was observed when films were deposited on a Pt/TiO2/SiO2/Si substrate, the oxide substrates, such as (Ba0.5Sr0.5)RuO3/Si, SrTiO3, and LaAlO3, enabled the deposition of pure perovskite. Scanning Auger microprobe, transmission electron microscope, and x-ray diffraction analysis showed that an interfacial layer between the substrates and the oxide film was central to the phase evolution behavior. On the Pt/TiO2/SiO2/Si substrate, an interfacial layer of lead–platinum (Pb–Pt) played a major role in the formation of the pyrochlore phase. However, on oxide substrates, there was no interfacial layer and interdiffusion of A-site cations was observed between the PMN film and the oxide electrodes.
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da Silva Almeida, Darlene Souza, Ladario da Silva, Marcela Teixeira Dalboni Garcia, José Adilson de Castro, and Luciano Pessanha Moreira. "Ellipsometric Characterization of AZ31 Magnesium Alloy." Materials Science Forum 930 (September 2018): 478–83. http://dx.doi.org/10.4028/www.scientific.net/msf.930.478.

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Ellipsometry is a non-destructive and indirect technique able to characterize both optical and dielectric properties of thin films and bulks, besides determining the thickness of thin films. This characterization is performed by evaluating the change in the polarization state of the incident light when it interacts with the material of interest. In this work, the ellipsometry technique was used to characterize optical properties of AZ31 magnesium alloy samples. This alloy has several interesting properties such as low density, high thermal conductivity, good machinability, among others, which makes it suitable for use in automotive and aerospace components. However, when this alloy is exposed to ambient atmosphere, it undergoes natural oxidation, developing a surface film of oxides and/or hydroxides. This study aimed to establish an efficient methodology for accessing the optical and dielectric characteristics of the substrate (AZ31 alloy) as well as those for the surface film of oxide/hydroxides, and to obtain the thickness of this film. Four samples mechanically grinded and polished were investigated: One sample, namely P sample, was subjected to the ellipsometric measurements immediately after grinding and polishing and three samples, namely A10, A50 and A60, were exposed to the air at 150°C during 10, 50 e 60 minutes, respectively. From the results of the ellipsometric measurements for P sample, it was possible to determine the refractive index (n) and extinction coefficient (k) curves as a function of the wavelength (λ) for the substrate (AZ31 alloy). Besides, through appropriate modeling, it was possible to determine the thicknesses of the oxides/hydroxides films presented in A10, A50 and A60 samples. The thicknesses values obtained seem to be quite coherent when we analyze the surface roughness of these samples using the confocal microscope, validating the optical model constructed to represent the A10, A50 and A60 samples. The results achieved in this study can contribute to the study of both of oxides/hydroxides layers growth and protective coating films growth for AZ31 magnesium alloy.
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Mohd Wahid, Mohamad Hafiz, Rozana Mohd Dahan, Siti Zaleha Sa'ad, Adillah Nurashikin Arshad, Muhamad Naiman Sarip, Habibah Zulkefle, and Mohamad Rusop Mahmood. "Surface Morphologies of PVDF-TrFE/MgO Nanocomposite Thin Films and its Effect on the Ferroelectric Properties." Advanced Materials Research 1134 (December 2015): 6–11. http://dx.doi.org/10.4028/www.scientific.net/amr.1134.6.

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The enhancement of ferroelectric and dielectric properties of PVDF-TrFE by incorporating various percentages of Magnesium Oxide (1 – 7%) for spin coated nanocomposite thin film was demonstrated. Observations showed uniform distribution and low agglomeration of MgO in the PVDF-TrFE nanocomposite thin film, especially for 3% MgO. Additionally, the 3% MgO incorporated into PVDF-TrFE had generated the highest Pr (88 mC/m2) and dielectric constant (13.6) in comparison other percentage compositions. However, the addition of more than 3% MgO filler loading caused a reduction in the ferroelectric and dielectric properties of the nanocomposite thin films.
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Dissertations / Theses on the topic "Magnesium oxide thin film"

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Wang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.

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Dyachenko, A. V. "Spray pyrolysis deposition of magnesium oxide thin films." Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/34844.

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Magnesium oxide seems to be a good candidate regarding its bulk properties: large band gap (7.8 eV), high thermal conductivity and stability and an alternative dielectric to silicon dioxide (SiO2) to reduce the electric field in capacitive networks. MgO, widely used as a substrate for high-temperature superconductor films deposition, has attracted much attention due to its low dielectric constant, low dielectric loss, and less mismatch with YBCO films. With a low dielectric loss, MgO shows a wide application in microwave devices. Due to its low refractive index, MgO is especially a suitable buffer for epitaxial optical waveguide films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34844
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Hlaing, Oo Win Maw. "Infrared spectroscopy of zinc oxide and magnesium nanostructures." Online access for everyone, 2007. http://www.dissertations.wsu.edu/Dissertations/Fall2007/w_hlaingoo_121107.pdf.

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Bittau, Francesco. "Analysis and optimisation of window layers for thin film CDTE solar cells." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32642.

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The work presented in this thesis focuses on the investigation and improvement of the window stack of layers for thin film CdTe solar cells fabricated in the Center for Renewable Energy Systems Technology (CREST) laboratories. In particular the aim was to change the standard structure including TCO, high resistive transparent (HRT)layer and CdS which is limited by the low transparency of the CdS layer, to a better performing one. The first result chapter of the thesis describes the study of ZnO HRT layers. ZnO thin films were deposited by radio frequency (RF) magnetron sputtering with different structural, optical and electrical properties which were characterized by X-ray diffraction, electron microscopy, spectrophotometry, Hall Effect method and 4-point probe. ZnO films were then incorporated in CdTe solar cells with the structure: FTO/ZnO/CdS/CdTe/Au back contact and the performance of these devices were compared with the film properties to single out trends and identify optimal film characteristics. By varying the deposition pressure of ZnO films, it was possible to increase their transparency and significantly increase their resistivity. While better transparency positively affected the solar cell current density output and efficiency, the resistivity of ZnO films did not show any clear impact on device efficiency. By increasing the deposition temperature the ZnO film grain size was increased. Increased FF was observed in devices incorporating ZnO layers with bigger grains, although this gain was partially counterbalanced by the Voc degradation, leading to a limited efficiency improvement. Finally the addition of oxygen had the main effect of increasing the resistivity of ZnO films, similarly to what happened with the increase of the sputtering pressure. In this case however, an improvement of FF, Jsc and efficiency was observed, especially at an O2/Ar ratio of 1%. By simulating the solar cells behavior with SCAPS-1D, it was found that these performance change can be explained by the variation of interface properties, precisely the amount of interface defects, rather than by bulk properties. The study presented in the second result chapter focuses on magnesium-doped zinc oxide (MZO) and the variation of its energy band structure. MZO was initially used as the HRT layer within a solar cell structure: FTO/MZO/CdS/CdTe/Au back contact. Sputtering MZO films with a target containing MgO 11 weight% and ZnO 89 weight% allowed for and increased band gap from 3.3 eV of intrinsic ZnO to 3.65 eV for MZO deposited at room temperature. Increasing the superstrate deposition temperature allowed for a further band gap increase up to 3.95 eV at 400 °C due mainly to an conduction band minimum upward shift. It was highlighted the importance to create a positive conduction band offset with the MZO layer conduction band slightly above the CdS conduction band, with an optimum found in this case to be 0.3 eV (efficiency 10.6 %). By creating a positive conduction band offset all the performance parameters (Voc, FF, Jsc, efficiency) significantly increased. One of the reasons for this improvement was found to be a diminished interface recombination due to a more ideal MZO/CdS band alignment. In the second part of this investigation the MZO was used as a replacement for the CdS in a simplified structure: FTO/MZO/CdTe/Au back contact. The concepts used to optimise the performance of these devices also involved tuning the conduction band alignment between MZO/CdTe and efficiencies of 12.5 % were achieved with a at conduction band offset. The efficiency increase was achieved mainly thanks to a better transparency of the MZO layer and a higher Jsc output, compared to devices using a CdS buffer layer. The MZO buffers have been tested in combination with different TCOs. Results are presented in the third result chapter and showed that AZO is a good alternative to FTO working effectively in combination with MZO. AZO/MZO efficiency thin film CdTe solar cells (12.6%, compared to 12.5% with FTO). It was found that increasing the IR transparency of the TCOs leads to a potentially higher Jsc. Achieving a better transparency was obtained by using TCOs with high mobility and lower carrier concentration (AZO and ITiO) and also by using a boro-aluminosilicate glass with low iron content. ITiO yielded the best opto-electrical properties among all the TCO materials. Devices incorporating ITiO however, showed lower performance then those using FTO and AZO. ITO/MZO windows also yielded poor performance. In addition, the ITO films deposited had a high carrier concentration leading to a high NIR absorption by plasma resonance and resulted not ideal for application in thin film CdTe PV.
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Jurgens-Kowal, Teresa Ann. "Preparation and characterization of synthetic mineral surfaces : adsorption and thermal decomposition of tetraethoxysilane on magnesium oxide, molybdenum, and titanium dioxide surfaces /." Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/9865.

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Pousaneh, Elaheh, Tobias Rüffer, Khaybar Assim, Volodymyr Dzhagan, Julian Noll, Dietrich R. T. Zahn, Lutz Mertens, Michael Mehring, Stefan E. Schulz, and Heinrich Lang. "Magnesium β-Ketoiminates as CVD Precursors for MgO Formation." Technische Universität Chemnitz, 2018. https://monarch.qucosa.de/id/qucosa%3A21427.

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The synthesis and characterization of bis(ketoiminato)magnesium(II) complexes of composition [Mg(OCR2CH2CHR1NCH2CH2X)2] (X = NMe2: 3a, R1 = R2 = Me; 3b, R1 = Me, R2 = Ph. X = OMe: 3c, R1 = R2 = Me) are reported. Complexes 3a–c are accessible by the reaction of C(O)R2CH2CHR1N(H)CH2CH2X (X = NMe2: 1a, R1 = R2 = Me; 1b, R1 = Me, R2 = Ph. X = OMe: 1c, R1 = R2 = Me) with MgnBu2. The structure of 3b in the solid state was determined by a single crystal X-ray diffraction study, confirming that the Mg(II) ion is hexa-coordinated by two ketoiminato ligands, while each of the latter coordinates with its two N- and one O-donor atom in an octahedral MgN6O2 coordination environment in the OC-6-33 stereo-isomeric form. The thermal behavior of 3a–c was studied by TG and DSC under an atmosphere of Ar and O2 respectively. The respective Me-substituted complexes 3a,c decompose at lower temperatures (3a, 166 °C; 3c, 233 °C) than the phenyl derivative 3b (243 °C). PXRD studies indicate the formation of MgO. Additionally, TG-MS studies were exemplarily carried out for 3a, indicating the release of the ketoiminato ligands. Vapor pressure measurements were conducted at 80 °C, whereby 3a,c possess with 5.6 mbar (3a) and 2.0 mbar (3c) significantly higher volatilities than 3b (0.07 mbar). Complexes 3a–c were used as MOCVD precursors for the deposition of thin MgO films on silicon substrates. It was found that only with 3a,c thin, dense and rather granulated MgO layers of thicknesses between 28–147 nm were produced. The as-deposited MgO layers were characterized by SEM, EDX, and XPS measurements and the thicknesses of the as-deposited layers were measured by Ellipsometry and SEM cross-section images. Apart from magnesium and oxygen a carbon content between 3–4 mol% was determined.
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Sarpi, Brice. "Etude in-situ de la formation d'oxyde ultra-mince de magnésium sur substrats métalliques et semi-conducteurs." Thesis, Aix-Marseille, 2016. http://www.theses.fr/2016AIXM4329/document.

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Ce travail de thèse s’est inscrit dans un cadre fondamental d’étude de la formation contrôlée d’oxydes en couches ultra-minces. Un bâti ultra-vide dédié à la croissance contrôlée de ces oxydes et à leur analyse in-situ (STM-STS, AES et LEED) a été développé. Par une méthode originale de phases alternées de dépôt d’une monocouche atomique de Mg et oxydation à RT, les mécanismes impliqués dans la formation de deux systèmes à fort potentiel applicatif : MgO/Si(100) et MgO/Ag(111) ont été étudiés .Le système MgO/Si(100) a révélé la formation d’une couche ultra-mince de Mg2Si à l’interface entre le MgO et le substrat. En bon accord avec les calculs thermodynamiques réalisés, une cristallisation de cette couche interfaciale dans un processus de dissociation partielle du Mg2Si en MgO à température ambiante a été observée. Identifiée ex-situ par TEM, la relation d’épitaxie associée à cette cristallisation a permis de conclure à la formation d’une hétérostructure MgO / Mg2Si (11-1) / Si(001), témoignant d’une grande qualité d’interface avec le silicium et de la formation d’une couche ultra-mince et amorphe de MgO homogène et isolante (gap de 6 eV).Pour le système MgO/Ag(111), nos résultats expérimentaux couplés aux calculs ab initio de nos partenaires du LAAS ont révélé l’absence de formation d’un alliage de surface ainsi qu’une croissance « liquid-like » du magnésium à RT. Un double empilement O/Mg/O/Mg/Ag(111) suivi d’un recuit UHV à 430°C a ensuite permis la stabilisation d’une couche ultra-mince polaire de MgO(111) qui a été caractérisée par LEED et STM-STS. Les propriétés physico-chimiques et origines possibles de stabilité de cet oxyde polaire ont ensuite été discutées
This PhD work was dedicated to studying the fundamental mechanisms driving the controlled growth of ultra-thin oxide films. An experimental set-up was designed to finely control the growth parameters under UHV conditions while allowing the study of such oxide layers in situ with STM-STS, AES and LEED. Using an original method based on alternate cycles of Mg monolayer adsorption and RT oxidation, we focused on the formation of systems exhibiting a wide range of potential applications: MgO/Si(100) and MgO/Ag(111). The MgO/Si(100) system revealed the growth of an ultra-thin Mg2Si layer at the interface between the MgO and the silicon. In agreement with thermodynamic calculations, a crystallization of this interlayer driven by a partial decomposition of the Mg2Si to a MgO oxide was shown to occur at RT. From ex situ TEM experiments, the involved epitaxial relationship highlighted the formation of an MgO / Mg2Si (11-1) / Si(001) heterostructure. A sharp interface with the silicon was formed, as much as an ultra-thin and amorphous MgO layer exhibiting both a good homogeneity and a high insulating character (bandgap of 6 eV).In the MgO/Ag(111) system, no interfacial alloy formation and a « liquid-like » growth for the Mg were evidenced at RT, using our experimental results coupled with the ab initio calculations performed by our co-workers at LAAS laboratory. Later, a double-layering O/Mg/O/Mg/Ag(111) grown at RT followed by UHV annealing at 430°C resulted in the stabilization of a polar MgO(111) ultra-thin film, which was characterized using LEED and STM-STS. The physicochemical properties of this polar oxide and the potential origin of its stability were discussed
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Bitencourt, José Francisco Sousa. "Produção e caracterização de óxido de alumínio, aluminato de magnésio e filmes finos de óxido de alumínio para aplicações em radioterapia e dosimetria ambiental." Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-11072014-014000/.

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Medidas de Termoluminescência (TL), Luminescência Opticamente Estimulada (LOE), EPR (Ressonância Paramagnética de Elétron) e RL (Radioluminescência) foram obtidas de amostras de óxido de alumínio e óxido de alumínio dopado com magnésio. As amostras foram calcinadas em três diferentes temperaturas (1100, 1350 e 1600°C) para observar a variação do comportamento das propriedades luminescentes. Ao final, constatou-se que a temperatura de calcinação é um parâmetro de grande importância para a produção de materiais dosimétricos, pois a amostra com melhores resultados LOE foi o material sem dopante tratada a 1600°C. Em trabalhos anteriores, a composição de óxido de alumínio dopado com magnésio havia apresentado nanoestruturas de aluminato de magnésio, observadas através de Microscopia Eletrônica de Transmissão (MET), que influenciaram a sensibilidade do material à radiação. Amostras de aluminato de magnésio puro e dopado com terras raras foram obtidas na forma de pó e calcinadas a 1100, 1350 e 1600°C. Medidas de TL e LOE de amostras irradiadas com fonte de partículas foram analisadas e comparadas com resultados de EPR e Difração de Raios-X (DRX). Como resultado, foi concluído que, nas condições trabalhadas, somente o elemento gadolínio proporcionou aumento de emissão LOE e TL no espectro visível. DRX indicou a formação dos compostos Al5Er3O12 e Al5Yb3O12; gadolínio e európio também formaram estruturas secundárias que não puderam ser determinadas. A partir do óxido de alumínio em pó, foram produzidos alvos para deposição de filmes finos empregando um sistema de sputtering magnetron e lâminas de silício monocristalino (100) tipo P para substrato. Parâmetros de deposição e de tratamento térmico foram variados de modo a produzir amostras com diferentes características. Curvas de TL foram levantadas e analisadas com relação aos resultados de DRX. Imagens de Microscopia Eletrônica de Varredura (MEV) foram obtidas de algumas amostras para visualizar o estado dos filmes depositados após tratamentos térmicos de 500 e 1100°C. Resultados mostraram a formação de picos de difração de a-Al2O3 em algumas das amostras espessas. Medidas de TL de amostras expostas à radiação ambiente exibiram picos de emissão em posições que variaram de acordo com a composição e espessura do filme depositado.
Thermoluminecent (TL), Optically Stimulated Luminescence (OSL), EPR (Electron spin Resonance) and Radioluminescence (RL) measurements were obtained from aluminum oxide and magnesium doped aluminum oxide samples. The samples were calcinated at three different temperatures (1100, 1350 and 1600°C) in order to observe variation of luminescent properties. As results, it was found that the calcination temperature is of great importance in the production of dosimetric materials, since the undoped sample calcinated at 1600°C showed the highest sensibility. In early works, magnesium doped aluminum oxide samples exhibited the formation of nanostructured layer composed by magnesium aluminate, observed using Transmission Electron Microscopy (TEM), which induced an increase of the luminescent properties. Samples of undoped and rare-earths doped magnesium aluminate, calcinated at 1100, 1350 and 1600°C, were produced. TL and OSL measurements were obtained from irradiated aliquots, analyzed and compared to EPR and XRD results. Results showed that, under the parameters used in this work, only gadolinium doped samples exhibited increase in TL and OSL emissions. XRD indicated the formation of Al5Er3O12 and Al5Yb3O12 structures in doped samples; gadolinium and europium doped samples also showed new structures, which couldnt be identified. Powder aluminum oxide was used to produce deposition targets, which were employed in the deposition of thin films over P type monocrystalline silicon (100) wafers. Variations of deposition parameters and heat treatment induced the formation of thin films with different characteristics, observed by XRD and luminescent analysis (TL). XRD results indicated the occurrence of alpha-Al2O3 in some of the thick films. Samples exposed to natural radiation produced TL emission in the visible spectrum.
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Akyildiz, Hasan. "Hydrogen Storage In Magnesium Based Thin Film." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/12612652/index.pdf.

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ABSTRACT HYDROGEN STORAGE IN MAGNESIUM BASED THIN FILMS Akyildiz, Hasan Ph.D., Department of Metallurgical and Materials Engineering Supervisor : Prof. Dr. Tayfur Ö
ztü
rk Co-Supervisor : Prof. Dr. Macit Ö
zenbas October 2010, 146 pages A study was carried out for the production of Mg-based thin films which can absorb and desorb hydrogen near ambient conditions, with fast kinetics. For this purpose, two deposition units were constructed
one high vacuum (HV) and the other ultra high vacuum (UHV) deposition system. The HV system was based on a pyrex bell jar and had two independent evaporation sources. The unit was used to deposit films of Mg, Mg capped with Pd and Au-Pd as well as Mg-Cu both in co-deposited and multilayered form within a thickness range of 0.4 to 1.5 &mu
m. The films were crystalline with columnar grains having some degree of preferred orientation. In terms of hydrogen storage properties, Mg/Pd system yielded the most favorable results. These films could desorb hydrogen at temperatures not greater than 473 K. The study on crystalline thin films has further shown that there is a narrow temperature window for useful hydrogenation of thin films, the upper limit of which is determined by the intermetallic formation. The UHV deposition system had four independent evaporation sources and incorporated substrate cooling by circulating cooled nitrogen gas through the substrate holder. Thin films of Mg-Cu were produced in this unit via co-evaporation technique to provide concentrations of 5, 10 and 15 at. % Cu. The films were 250-300 nm thick, capped with a thin layer of Pd, i.e. 5-25 nm. The deposition was yielded nanocrystalline or amorphous Mg-Cu thin films depending on the substrate temperature. At 298 K, the films were crystalline, the structure being refined with the increase in Cu content. At 223 K, the films were amorphous, except for Mg:Cu=95:5. The hydrogen sorption of the films was followed by resistance measurements, with the samples heated isochronally, initially under hydrogen and then under vacuum. The resistance data have shown that hydrogen sorption behaviour of thin films was improved by size refinement, and further by amorphization. Among the films deposited, amorphous Mg:Cu=85:15 alloy could absorb hydrogen at room temperature and could desorb it at 223 K (50 º
C), with fast kinetics.
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Guan, Jingcheng. "Modelling zinc oxide thin-film growth." Thesis, Loughborough University, 2018. https://dspace.lboro.ac.uk/2134/36311.

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Photovoltaics have a significant role in the solution of energy supply and energy security. Research on photovoltaic devices and their production processes has been carried out for decades. The transparent conducting oxide layer, in the photovoltaic solar cell, composed of aluminium doped zinc oxide, is produced through deposition techniques. By modelling these depositions using classical molecular dynamics, a better understanding on the short term kinetics occurring on the growing surface has been achieved. Compared to the molecular dynamics, the employment of the adaptive kinetic Monte Carlo method enabled such surface growth dynamics simulation to reach much longer time scale. Parallelised transition searching was carried out in an on-the-fly manner without lattice approximation or predefined events table. The simulation techniques allowed deposition conditions to be easily changed, such as deposition energy, deposition rate, substrate temperature, plasma pressure, etc. Therefore, in this project three main deposition techniques were modelled including evaporation (thermal and assisted electron beam), reactive magnetron sputtering and pulsed laser depositions. ZnO as a covalent compound with many uses in semiconductors was investigated in its most energy favourable wurtzite configuration. The O-terminated surface was used as the substrate for the growth simulation. Evaporation deposition at room temperature (300 K) with a stoichiometric distribution of deposition species produced incomplete new layers. Holes were observed existing for long times in each layer. Also, stacking faults were formed during the low-energy (1 eV) growth through evaporation. The reactive sputtering depositions were more capable of getting rid of these holes structures and diminished these stacking faults through high energy bombardments but could also break these desirable crystalline structure during the growth. However, single deposition results with high energies showed that the ZnO lattice presented good capacity of self-healing after energetic impacts. Additionally, such self-healing effects were seen for substrate surface during thin film growth by the sputtering depositions. These facts shed some light on that the sputtering technique is the method of choice for ZnO thin film depositions during industrial production. Simulation results of pulsed laser deposition with separated Zn and O species showed the thin films were grown in porous structures as the O-terminated surface could be severely damaged by Zn atoms during the very short pulse window (10 microseconds). An important growth mechanism with ZnO dimer deposited on the O-terminated polar surface was the coupling of these single ZnO dimers, forming highly mobile strings along the surface and thus quenching its dipole moments, whilst the isolated single ZnO dimers were hardly of this mobility. Such strings were the building blocks for the fabrication occurring on the surface resulting in new layers. Last but not least, a reactive force field for modelling Al doped ZnO was fitted. DFT calculations showed that the Al atoms on the surface were likely to replace Zn atoms in their lattice sites for more energy favourable structures. Al on the ZnO surfaces, structures with Al in the bulk as well as configurations with Al interstitials were used to train the force field to reproduce favourable surface binding sites, cohesive energies and lattice dimensions. The combination scheme of MD and the AKMC allowed simulation work to reach over experimentally realistic time scale. Therefore, crucial mechanisms occurring during the growth could be precisely understood and investigated on an atomistic level. It has been shown from the simulation results that certain types of deposition play significant roles in the quality of resultant thin films and surface morphology, thus providing insight to the optimal deposition conditions for growing complete crystalline ZnO layers.
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Books on the topic "Magnesium oxide thin film"

1

Vladimir, Matias, and Materials Research Society Meeting, eds. Artificially induced grain alignment in thin films: Symposium held December 2-3, 2008, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2009.

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P, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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P, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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P, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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P, Shapiro A., and United States. National Aeronautics and Space Administration., eds. Magnesium-aluminum-zirconium oxide amorphous ternary composite: A dense and stable optical coating. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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National Renewable Energy Laboratory (U.S.), ed. Amorphous indium-zinc-oxide transparent conductors for thin film PV: Preprint. Golden, CO: National Renewable Energy Laboratory, 2011.

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Laconte, J. Micromachined thin-film sensors for SOI-CMOS co-integration. New York: Springer, 2011.

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Barquinha, Pedro. Transparent oxide electronics: From materials to devices. Hoboken, N.J: Wiley, 2012.

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Klaus, Ellmer, Klein Andreas Dr, and Rech Bernd, eds. Transparent conductive zinc oxide: Basics and applications in thin film solar cells. Berlin: Springer, 2008.

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Chubb, Donald L. Emittance theory for thin film selective emitter. [Washington, DC]: National Aeronautics and Space Administration, 1994.

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Book chapters on the topic "Magnesium oxide thin film"

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Hikita, Yasuyuki, and Harold Y. Hwang. "Complex Oxide Schottky Junctions." In Thin Film Metal-Oxides, 169–204. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_5.

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Lu, Jiwei, Kevin G. West, and Stuart A. Wolf. "Novel Magnetic Oxide Thin Films." In Thin Film Metal-Oxides, 95–129. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_3.

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Demkov, Alexander A., and Agham B. Posadas. "Thin Oxide Film Characterization Methods." In Integration of Functional Oxides with Semiconductors, 89–114. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4614-9320-4_5.

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Kambara, Hiroyuki, Theodor Schneller, and Rainer Waser. "Thin Film Multilayer Capacitors." In Chemical Solution Deposition of Functional Oxide Thin Films, 547–70. Vienna: Springer Vienna, 2013. http://dx.doi.org/10.1007/978-3-211-99311-8_22.

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Brotherton, S. D. "Transparent Amorphous Oxide Semiconductor TFTs." In Introduction to Thin Film Transistors, 301–38. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_9.

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Fister, Tim T., and Dillon D. Fong. "In Situ Synchrotron Characterization of Complex Oxide Heterostructures." In Thin Film Metal-Oxides, 1–49. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_1.

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Kamiya, Toshio, Kenji Nomura, Keisuke Ide, Jungwhan Kim, Hidenori Hiramatsu, Hideya Kumomi, and Hideo Hosono. "Amorphous Oxide Semiconductor Thin-Film Transistors." In Novel Structured Metallic and Inorganic Materials, 573–87. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-7611-5_38.

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Dorey, Robert, Subhasis Roy, A. Sharma, Chandan Ghanty, and Subhasish B. Majumder. "Composite Film Processing." In Chemical Solution Deposition of Functional Oxide Thin Films, 445–82. Vienna: Springer Vienna, 2013. http://dx.doi.org/10.1007/978-3-211-99311-8_19.

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Barquinha, Pedro, Rodrigo Martins, and Elvira Fortunato. "N-Type Oxide Semiconductor Thin-Film Transistors." In Springer Series in Materials Science, 435–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23521-4_15.

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Ignatiev, Alex, Rabi Ebrahim, Mukhtar Yeleuov, Daniel Fisher, Xin Chen, Naijuan Wu, and Serekbol Tokmoldin. "Nanostructured Thin Film Solid Oxide Fuel Cells." In Advanced Nano Deposition Methods, 223–38. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2016. http://dx.doi.org/10.1002/9783527696406.ch12.

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Conference papers on the topic "Magnesium oxide thin film"

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Xiaobin Bi, Jianke Yao, and Shengdong Zhang. "Magnesium-doped Indium Oxide thin film transistors for ultraviolet detection." In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061093.

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Liu, Ming-Chung, Shih-Chin Yang, Cheng-Chung Lee, Shih-Pu Chen, Jung-Yu Li, and Yi-Ping Lin. "Microstructure- and optic-related characteristics of magnesium oxide thin film." In Optical Engineering + Applications, edited by Jennifer D. T. Kruschwitz and Michael J. Ellison. SPIE, 2008. http://dx.doi.org/10.1117/12.794865.

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Kephart, Jason M., and W. S. Sampath. "Gallium-doped magnesium zinc oxide (GMZO) transparent conducting oxide layers for CdTe thin-film photovoltaics." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7355899.

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Chayed, Nor Fadilah, Nurhanna Badar, Roshidah Rusdi, Norashikin Kamarudin, Norlida Kamarulzaman, Muhammed Hasan Aslan, Ahmet Yayuz Oral, Mehmet Özer, and Süleyman Hikmet Çaglar. "Optical Band Gap Energies of Magnesium Oxide (MgO) Thin Film and Spherical Nanostructures." In INTERNATIONAL CONGRESS ON ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE. AIP, 2011. http://dx.doi.org/10.1063/1.3663137.

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Choi, Young-Wook, and Jeehyun Kim. "Large area deposition technique of magnesium oxide thin film for plasma display panel applications." In ICO20:Display Devices and Systems, edited by Tatsuo Uchida, Xu Liu, and Hang Song. SPIE, 2006. http://dx.doi.org/10.1117/12.667358.

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Uddin, Ghulam Moeen, Bing Sun, Katherine Ziemer, Abe Zeid, and Sagar Kamarthi. "Monte Carlo Study of the Molecular Beam Epitaxy Process for Manufacturing Iron Oxide Nano Scale Films and Similarities With Magnesium Oxide Films." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65570.

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Functional properties of thin film metal oxides depend upon their stoichiometric and structural uniformity. Controlling the film deposition process can help tune the functionality of these films by ensuring the control over chemistry and structure of the films. The high volume manufacturing of functional devices will benefit from the development of reliable control models developed from research efforts in designing robust manufacturing processes. The use of neural networks as computer models to simulate the molecular beam epitaxy (MBE) of iron oxide thin films is presented in this work. Monte Carlo experiments are used to study the sensitivities and significances of process control variables to the stoichiometric performance indicators. Moreover, we also explore the relationship between growth dynamics of iron oxide (Fe2O3, Fe3O4, and mixed FexOy) and magnesium oxide (MgO) thin films. The common metal adsorption controlled growth mechanism of two films with different structural and stoichiometric complexities were observed and the similarities among the trends of analogous stoichiometric indicators at comparable metal arrival rates of the two films are presented. The dependence of undesirable bonding states of iron and magnesium metals with the film thicknesses was also observed in both processes. The commonalities suggest the potential to use of neural network assisted Monte Carlo analysis to link common atomic-level mechanisms to processing variables in one nano-scale system and use them to predict some level of behavior in other nanoscale processes with similar atomic-level mechanisms.
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Sinha, Mangalika, R. K. Gupta, P. Dasilva, P. Mercere, and Mohammed H. Modi. "Modification of optical properties of magnesium oxide (MgO) thin film under the influence of ambience." In DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0017048.

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Vedam, K., and S. Y. Kim. "Simultaneous Determination of Refractive Index, Its Dispersion and Depth Profile of Magnesium Oxide Thin Film by Spectroscopic Ellipsometry." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oic.1988.pdp7.

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One of the major problems that has been plaguing the optical and materials engineers in the effective utilization of thin films in a variety of optical devices, is that even the basic data on the true refractive index, and its dispersion of many materials have not yet been determined since they are not available in bulk form and in thin film form they are inhomogeneous with consequent irreproducible results. Borgogno et al. [1] have recently developed a method of determining the complex refractive index, the thickness and the magnitude of film inhomogeneity from an analysis of normal incidence spectral reflectance and transmittance results with the assumption that the refractive index of the film decreases (or increases) linearly with thickness due to inhomogeneity. Such an assumption is however seldom valid.
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Bittau, Francesco, Elisa Artegiani, Ali Abbas, Daniele Menossi, Alessandro Romeo, Jake W. Bowers, and John M. Walls. "Magnesium-doped Zinc Oxide as a High Resistance Transparent Layer for thin film CdS/CdTe solar cells." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366785.

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Uddin, Ghulam Moeen, Katherine Ziemer, Abe Zeid, and Sagar Kamarthi. "Study of Lattice Strain Propagation in Molecular Beam Epitaxy of Nano Scale Magnesium Oxide Thin Film on 6H-SiC Substrates Using Neural Network Computer Models." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87015.

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Magnesium oxide (MgO) is a candidate for interface layer application in multifunctional heterostructures. Molecular beam epitaxy (MBE) of MgO on 6H-SiC is studied for effective integration of functional oxides. In this research we present the neural network assisted design of experiment (DOE) analysis of the crystalline structure of MgO films grown over 6H-SiC substrates. Based on reflection high energy electron diffraction (RHEED) characterization of the MgO (111) films grown we present the DOE analyses of the strain propagation in two different orientations (110 and 112) during growth process with respect to growth time, substrate temperature, magnesium source temperature, plasma intensity and percentage oxygen on the starting surface of 6H-SiC substrates. We conducted constant substrate temperature (150°C) and constant plasma intensity (350mV) analyses to quantify the relation between lattice strains in <110> and <112> directions. The constant plasma intensity analysis reveals that the growth propagates in a tensile strain mode for well reconstructed SiC surface. However, excessive oxygen on the SiC surface causes the lattice of MgO twist due to tensile strain as seen from the <110> direction and compressive strain in <112> direction. In constant substrate temperature analysis we found that the principal tensile strain inducing variable in <110> direction is growth time and the strain continues to increase as the film grows thicker. However, in <112> direction the optimum plasma intensity is critical to maintain the optimum strain in the film structure.
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Reports on the topic "Magnesium oxide thin film"

1

Li, Sonny Xiao-zhe. Nitrogen doped zinc oxide thin film. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/821916.

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SAULT, ALLEN G., JASON E. MUDD, JAMES E. MILLER, JUDITH A. RUFFNER, MARK A. RODRIGUEZ, and RALPH G. TISSOT, JR. Thin Film Models of Magnesium Orthovanadate Catalysts for Oxidative Dehydrogenation. Office of Scientific and Technical Information (OSTI), March 2001. http://dx.doi.org/10.2172/776352.

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Haridoss, P., E. Hellstrom, F. H. Garzon, D. R. Brown, and M. Hawley. Thin film ionic conductors based on cerium oxide. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/10103830.

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Dr. Harlan U. Anderson. Microporous and Thin Film Membranes for Solid Oxide Fuel. Office of Scientific and Technical Information (OSTI), February 2007. http://dx.doi.org/10.2172/908515.

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Shaban, Mohamed, G. F. Attia, Mohamed A. Basyooni, and Hany Hamdy. Synthesis and characterization of Tin oxide thin film, effect of annealing on multilayer film. Edited by Lotfia Elnai and Ramy Mawad. Journal of Modern trends in physics research, December 2014. http://dx.doi.org/10.19138/mtpr/(14)90-99.

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Lad, Robert J. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures. Office of Scientific and Technical Information (OSTI), December 1999. http://dx.doi.org/10.2172/758832.

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Nguyen Minh and Kurt Montgomery. TAPE CALENDERING MANUFACTURING PROCESS FOR MULTILAYER THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), October 2004. http://dx.doi.org/10.2172/835848.

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Jie Guan and Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/822898.

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Jie Guan and Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/822899.

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Jie Guan, Atul Verma, and Nguyen Minh. MATERIAL AND PROCESS DEVELOPMENT LEADING TO ECONOMICAL HIGH-PERFORMANCE THIN-FILM SOLID OXIDE FUEL CELLS. Office of Scientific and Technical Information (OSTI), April 2003. http://dx.doi.org/10.2172/822139.

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