Journal articles: 'Mach-Zehnder modulators'

1

Altwegg, Laurenz. "Properties of polymeric Mach-Zehnder modulators." Optical Engineering 34, no. 9 (September 1, 1995): 2651. http://dx.doi.org/10.1117/12.200606.

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Kawanishi, Tetsuya. "Precise Optical Modulation and Its Application to Optoelectronic Device Measurement." Photonics 8, no. 5 (May 11, 2021): 160. http://dx.doi.org/10.3390/photonics8050160.

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Optoelectronic devices which play important roles in high-speed optical fiber networks can offer effective measurement methods for optoelectronic devices including optical modulators and photodetectors. Precise optical signal modulation is required for measurement applications. This paper focuses on high-speed and precise optical modulation devices and their application to device measurement. Optical modulators using electro-optic effect offers precise control of lightwaves for wideband signals. As examples, this paper describes frequency response measurement of photodetectors using high-precision amplitude modulation and wavelength domain measurement of optical filters using fast optical frequency sweep. Precise and high-speed modulation can be achieved by active trimming which compensates device structure imbalance due to fabrication error, where preciseness can be described by on-off extinction ratio. A Mach-Zehnder modulator with sub Mach-Zehnder interferometors can offer high extinction-ratio optical intensity modulation, which can be used for precise optoelectronic frequency response measurement. Precise modulation would be also useful for multi-level modulation schemes. To investigate impact of finite extinction ratio on optical modulation, duobinary modulation with small signal operation was demonstrated. For optical frequency domain analysis, single sideband modulation, which shifts optical frequency, can be used for generation of stimulus signals. Rapid measurement of optical filters was performed by using an optical sweeper consisting of an integrated Mach-Zehnder modulator for optical frequency control and an arbitrary waveform generator for generation of a source frequency chirp signal.

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3

Kawanishi, Tetsuya. "Parallel Mach-Zehnder modulators for quadrature amplitude modulation." IEICE Electronics Express 8, no. 20 (2011): 1678–88. http://dx.doi.org/10.1587/elex.8.1678.

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Thomson, David J., Frederic Y. Gardes, Sheng Liu, Henri Porte, Lars Zimmermann, Jean-Marc Fedeli, Youfang Hu, et al. "High Performance Mach–Zehnder-Based Silicon Optical Modulators." IEEE Journal of Selected Topics in Quantum Electronics 19, no. 6 (November 2013): 85–94. http://dx.doi.org/10.1109/jstqe.2013.2264799.

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5

Yu, J., C. Rolland, D. Yevick, A. Somani, and S. Bradshaw. "Phase-engineered III-V MQW Mach-Zehnder modulators." IEEE Photonics Technology Letters 8, no. 8 (August 1996): 1018–20. http://dx.doi.org/10.1109/68.508723.

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6

Lawetz, C., J. C. Cartledge, C. Rolland, and J. Yu. "Modulation characteristics of semiconductor Mach-Zehnder optical modulators." Journal of Lightwave Technology 15, no. 4 (April 1997): 697–703. http://dx.doi.org/10.1109/50.566692.

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7

Sun, Shihao, Mengyue Xu, Mingbo He, Shengqian Gao, Xian Zhang, Lidan Zhou, Lin Liu, Siyuan Yu, and Xinlun Cai. "Folded Heterogeneous Silicon and Lithium Niobate Mach–Zehnder Modulators with Low Drive Voltage." Micromachines 12, no. 7 (July 14, 2021): 823. http://dx.doi.org/10.3390/mi12070823.

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Optical modulators were, are, and will continue to be the underpinning devices for optical transceivers at all levels of the optical networks. Recently, heterogeneously integrated silicon and lithium niobate (Si/LN) optical modulators have demonstrated attractive overall performance in terms of optical loss, drive voltage, and modulation bandwidth. However, due to the moderate Pockels coefficient of lithium niobate, the device length of the Si/LN modulator is still relatively long for low-drive-voltage operation. Here, we report a folded Si/LN Mach–Zehnder modulator consisting of meandering optical waveguides and meandering microwave transmission lines, whose device length is approximately two-fifths of the unfolded counterpart while maintaining the overall performance. The present devices feature a low half-wave voltage of 1.24 V, support data rates up to 128 gigabits per second, and show a device length of less than 9 mm.

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8

Fu, Yejun, Xiupu Zhang, Bouchaib Hraimel, Taijun Liu, and Dongya Shen. "Mach-Zehnder: A Review of Bias Control Techniques for Mach-Zehnder Modulators in Photonic Analog Links." IEEE Microwave Magazine 14, no. 7 (November 2013): 102–7. http://dx.doi.org/10.1109/mmm.2013.2280332.

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9

Enami, Yasufumi, Atsushi Seki, Shin Masuda, Tomoki Joichi, Jingdong Luo, and Alex K.-Y. Jen. "Bandwidth Optimization for Mach–Zehnder Polymer/Sol–Gel Modulators." Journal of Lightwave Technology 36, no. 18 (September 15, 2018): 4181–89. http://dx.doi.org/10.1109/jlt.2018.2860924.

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10

Fuster, J. M., J. Martí, and P. Candelas. "Modeling Mach-Zehnder LiNbO3external modulators in microwave optical systems." Microwave and Optical Technology Letters 30, no. 2 (June 22, 2001): 85–90. http://dx.doi.org/10.1002/mop.1228.

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11

Yu, Yuan, Jianji Dong, Xiang Li, and Xinliang Zhang. "Ultra-Wideband Generation Based on Cascaded Mach–Zehnder Modulators." IEEE Photonics Technology Letters 23, no. 23 (December 2011): 1754–56. http://dx.doi.org/10.1109/lpt.2011.2169241.

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12

Dong, Po. "Travelling-wave Mach-Zehnder modulators functioning as optical isolators." Optics Express 23, no. 8 (April 14, 2015): 10498. http://dx.doi.org/10.1364/oe.23.010498.

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13

Zou, Xinhai, Yujia Zhang, Zhihui Li, Yiwei Yang, Shangjian Zhang, Zhiyao Zhang, Yali Zhang, and Yong Liu. "Polarization-Insensitive Phase Modulators Based on an Embedded Silicon-Graphene-Silicon Waveguide." Applied Sciences 9, no. 3 (January 28, 2019): 429. http://dx.doi.org/10.3390/app9030429.

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A polarization-insensitive phase modulator concept is presented, based on an embedded silicon-graphene-silicon waveguide. Simulation results show that the effective mode index of both transverse electric (TE) and transverse magnetic (TM) modes in the silicon-graphene-silicon waveguide undergoes almost the same variations under different biases across a broad wavelength range, in which the real-part difference is less than 1.2 × 10−3. Based on that, a polarization-insensitive phase modulator is demonstrated, with a 3-dB modulation bandwidth of 135.6 GHz and a wavelength range of over 500 nm. Moreover, it has a compact size of 60 μm, and a low insertion loss of 2.12 dB. The proposed polarization-insensitive waveguide structure could be also applied to Mach-Zehnder modulators and electro-absorption modulators.

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14

Shao, Yu Feng, Shi Kui Wang, An Rong Wang, Shi Lu Shen, Luo Chen, and Fu Ping Chen. "8PSK Signals with 50% RZ Clock for Optical Access System Applications Using Phase Equalization Technique in MSPE." Applied Mechanics and Materials 716-717 (December 2014): 1099–102. http://dx.doi.org/10.4028/www.scientific.net/amm.716-717.1099.

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A multi-symbol phase modulation format, the 8 phase shift keying (8PSK) with 50% return-to-zero (RZ) clock, is proposed and demonstrated in this scheme for 30-Gb/s optical access downlink transmission applications using phase equalization technique in MSPE. RZ-8PSK optical signals are generated by cascading three phase modulators and a dual-arm Mach-Zehnder modulator. Superimposed 50% RZ clock is extracted and recovered for achieving access restoration. The result show the reception performance of 50% RZ-8PSK signals with phase equalization after transmission over SMF-28 is good.

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15

Ishutkin, S. V., I. V. Kulinich, and R. Shageev. "Development of components of electro-optic modulators on a semiconductor substrate for microwave photonics." ITM Web of Conferences 30 (2019): 14006. http://dx.doi.org/10.1051/itmconf/20193014006.

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The results of research and development of components of Mach-Zehnder electro-optic modulator, in particular, the Y-divider and MMI divider are presented. Technological studies were carried out and an optical divider on an InP semiconductor substrate was obtained.

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16

WANG Shao-feng, 王少锋, 王旭阳 WANG Xu-yang, 白增亮 BAI Zeng-liang, and 李永民 LI Yong-min. "A Bias Control Technique for Lithium Niobate Mach-Zehnder Modulators." Acta Sinica Quantum Optica 20, no. 2 (2014): 167–71. http://dx.doi.org/10.3788/asqo20142002.0167.

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17

He Jing, 何晶, 刘丽敏 Liu Limin, 陈林 Chen Lin, and 文双春 Wen Shuangchun. "Generation of Advanced Modulation Formats Based on Mach-Zehnder Modulators." Chinese Journal of Lasers 35, no. 8 (2008): 1185–90. http://dx.doi.org/10.3788/cjl20083508.1185.

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18

Jiang, Lingjun, Xi Chen, Kwangwoong Kim, Guilhem de Valicourt, Zhaoran Rena Huang, and Po Dong. "Electro-Optic Crosstalk in Parallel Silicon Photonic Mach-Zehnder Modulators." Journal of Lightwave Technology 36, no. 9 (May 1, 2018): 1713–20. http://dx.doi.org/10.1109/jlt.2018.2789582.

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19

Erman, M., P. Jarry, R. Gamonal, P. Autier, J. P. Chane, and P. Frijlink. "Mach-Zehnder modulators and optical switches on III-V semiconductors." Journal of Lightwave Technology 6, no. 6 (June 1988): 837–46. http://dx.doi.org/10.1109/50.4072.

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20

Jackel, J. L., and J. J. Johnson. "Nonsymmetric Mach-Zehnder interferometers used as low-drive-voltage modulators." Journal of Lightwave Technology 6, no. 8 (1988): 1348–51. http://dx.doi.org/10.1109/50.4140.

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21

Baba, Toshihiko, Hong C. Nguyen, Naoya Yazawa, Yosuke Terada, Satoshi Hashimoto, and Tomohiko Watanabe. "Slow-light Mach–Zehnder modulators based on Si photonic crystals." Science and Technology of Advanced Materials 15, no. 2 (April 2014): 024602. http://dx.doi.org/10.1088/1468-6996/15/2/024602.

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22

Deniel, Lucas, Erwan Weckenmann, Diego Pérez Galacho, Carlos Alonso-Ramos, Frédéric Boeuf, Laurent Vivien, and Delphine Marris-Morini. "Frequency-tuning dual-comb spectroscopy using silicon Mach-Zehnder modulators." Optics Express 28, no. 8 (March 30, 2020): 10888. http://dx.doi.org/10.1364/oe.390041.

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23

Pisu Jiang and A. C. O'Donnell. "LiNbO/sub 3/ Mach-Zehnder modulators with fixed negative chirp." IEEE Photonics Technology Letters 8, no. 10 (October 1996): 1319–21. http://dx.doi.org/10.1109/68.536641.

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24

Wilson, G. C. "Optimized predistortion of overmodulated Mach-Zehnder modulators with multicarrier input." IEEE Photonics Technology Letters 9, no. 11 (November 1997): 1535–37. http://dx.doi.org/10.1109/68.634733.

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25

Yuan Muye, 袁牧野, 刘波 Liu Bo, 王天亮 Wang Tianliang, and 徐志康 Xu Zhikang. "Sawtooth Waveform Generation Based on Two Parallel Mach-Zehnder Modulators." Laser & Optoelectronics Progress 55, no. 7 (2018): 070701. http://dx.doi.org/10.3788/lop55.070701.

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26

Ke Xu, Ling-Gang Yang, Jiun-Yu Sung, Y. M. Chen, Z. Z. Cheng, Chi-Wai Chow, Chien-Hung Yeh, and Hon Ki Tsang. "Compatibility of Silicon Mach-Zehnder Modulators for Advanced Modulation Formats." Journal of Lightwave Technology 31, no. 15 (August 2013): 2550–54. http://dx.doi.org/10.1109/jlt.2013.2270277.

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27

Chang, Wen-Ching, Chao-Yung Sue, Chih-Hui Ko, Ming-Yung Hsun, Li-Ying Chang, and Hwei-Yuan Liu. "Ni:LiNbO3 Mach-Zehnder modulators with a combinational-type waveguide structure." Microwave and Optical Technology Letters 20, no. 6 (March 20, 1999): 364–67. http://dx.doi.org/10.1002/(sici)1098-2760(19990320)20:6<364::aid-mop4>3.0.co;2-j.

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28

Jumonji, Hiromichi, and Toshinori Nozawa. "Instabilities and Their Characterization in Mach-Zehnder Ti:LiNbO3 Optical Modulators." Electronics and Communications in Japan (Part II: Electronics) 75, no. 6 (1992): 76–88. http://dx.doi.org/10.1002/ecjb.4420750608.

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29

Strutz, Shane J., and Keith J. Williams. "High-power photonic links incorporating fiber-based Mach-Zehnder modulators." Microwave and Optical Technology Letters 26, no. 3 (2000): 145–47. http://dx.doi.org/10.1002/1098-2760(20000805)26:3<145::aid-mop2>3.0.co;2-m.

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30

Visagathilagar, Y. S., T. G. Nguyen, A. A. Mitchell, and M. W. Austin. "Systematic design approach for optimized resonantly enhanced Mach-zehnder Modulators." Journal of Lightwave Technology 24, no. 1 (January 2006): 555–62. http://dx.doi.org/10.1109/jlt.2005.860162.

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31

Meng, X. J., A. Yacoubian, and J. H. Bechtel. "Electro-optical predistortion technique for linearisation of Mach-Zehnder modulators." Electronics Letters 37, no. 25 (2001): 1545. http://dx.doi.org/10.1049/el:20011037.

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32

Bardyszewski, Witold, David Yevick, Yong Liu, Claude Rolland, and Scott Bradshaw. "Theoretical and experimental analysis of Mach–Zehnder quantum‐well modulators." Journal of Applied Physics 80, no. 2 (July 15, 1996): 1136–41. http://dx.doi.org/10.1063/1.363730.

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33

Zhang, Chong, Paul A. Morton, Jacob B. Khurgin, Jon D. Peters, and John E. Bowers. "Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si." Optics Express 24, no. 17 (August 9, 2016): 19040. http://dx.doi.org/10.1364/oe.24.019040.

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34

Khalil, D. A. M., and S. Tedjini. "Coherent coupling of radiation modes in Mach-Zehnder electrooptic modulators." IEEE Journal of Quantum Electronics 28, no. 5 (May 1992): 1236–38. http://dx.doi.org/10.1109/3.135261.

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35

Zeiler, Marcel, Sarah Seif El Nasr-Storey, Stephane Detraz, Andrea Kraxner, Lauri Olantera, Carmelo Scarcella, Christophe Sigaud, Csaba Soos, Jan Troska, and Francois Vasey. "Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes." IEEE Transactions on Nuclear Science 64, no. 11 (November 2017): 2794–801. http://dx.doi.org/10.1109/tns.2017.2754948.

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36

Ishutkin, Sergey, Vadim Arykov, Igor Yunusov, Mikhail Stepanenko, Pavel Troyan, and Yury Zhidik. "Technological Development of an InP-Based Mach–Zehnder Modulator." Symmetry 12, no. 12 (December 6, 2020): 2015. http://dx.doi.org/10.3390/sym12122015.

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This paper presents the results of the development of a technology for manufacturing electro-optical Mach–Zehnder modulators based on InP. The key features of the technology are the use of one SiNx double-patterned dielectric mask with two sequential inductively coupled plasma (ICP) etchings of the heterostructure for the simultaneous formation of active and passive sections of the modulator’s optical waveguides. This prevents misalignment errors at the borders. The planarization of the wafer surface was performed using photosensitive benzocyclobutene (BCB) films in a combined scheme. Windows in the BCB film to the bottom ohmic contact and at the die boundaries were formed by lithography, and then the excess thickness of the BCB film was removed by ICP etching until the p-InGaAs contact regions of the p-i-n heterostructure were exposed. The deposition and annealing of the top ohmic contact Ti/Pt/Au (50/25/400 nm) to p-InGaAs was carried out after the surface planarization, with the absence of both deformation and cracking of the planarizing film. A new approach to the division of the wafers into single dies is presented in this paper. The division was carried out in two stages: first, grooves were formed by dicing or deep wet etching, and then cleaving was performed along the formed grooves. The advantages of these techniques are that it allows the edges of the waveguides at the optical input/outputs to be formed and the antireflection coating to be deposited simultaneously on all dies on the wafer, before it is divided.

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37

Парфенов, М. В., А. В. Тронев, И. В. Ильичев, П. М. Агрузов, and А. В. Шамрай. "Перераспределение оптической мощности в плечах волноводного Y-разветвителя при локальной внешней засветке подложки ниобата лития." Письма в журнал технической физики 46, no. 1 (2020): 8. http://dx.doi.org/10.21883/pjtf.2020.01.48855.18040.

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Optical tuning of the splitting ratio in an integrated optical Y-branch on lithium niobate (LiNbO3) substrate was investigated. Regions of an Y-branch susceptible to the external illumination were defined. Tuning of the splitting ratio in the range of 2% was experimentally demonstrated, which can be effectively used for improvement of Mach-Zehnder modulators extinction ratio.

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38

Shumin Zou, Shumin Zou, Yiguang Wang Yiguang Wang, Yufeng Shao Yufeng Shao, Junwen Zhang Junwen Zhang, Jianjun Yu Jianjun Yu, and Nan Chi Nan Chi. "Generation of coherent optical multi-carriers using concatenated, dual-drive Mach-Zehnder and phase modulators." Chinese Optics Letters 10, no. 7 (2012): 070605–70609. http://dx.doi.org/10.3788/col201210.070605.

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39

KIM, SEONGKU, K. GEARY, H. R. FETTERMAN, C. ZHANG, C. WANG, and W. H. STEIER. "PUSH-PULL ELECTRO-OPTIC POLYMER MODULATORS BASED ON PHOTO-BLEACHING INDUCED WAVEGUIDES AND DUAL-DRIVING ELECTRODES." Journal of Nonlinear Optical Physics & Materials 13, no. 03n04 (December 2004): 405–10. http://dx.doi.org/10.1142/s021886350400202x.

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Push-pull electro-optic polymeric Mach-Zehnder modulators with photo-bleaching induced waveguides and dual-driving electrodes operating at 1.55 μm wavelength have been demonstrated. The nonlinear electro-optic polymer used in this work was based on a phenyltetraene bridged chromophore in polycarbonate, APC-CLD1. It has been shown that the predominant photo-bleaching mechanism was a photochemical decomposition of the chromophore. The half-wave voltage of the integrated polymeric modulator was 4.5 V in a push-pull configuration with a 1.5 cm interaction length. The extinction ratio was greater than 20 dB, and the fiber-to-fiber insertion loss was 8 dB for the TM polarization at 1.55 μm wavelength.

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40

Li, Wangzhe, and Jianping Yao. "Optical frequency comb generation based on repeated frequency shifting using two Mach-Zehnder modulators and an asymmetric Mach-Zehnder interferometer." Optics Express 17, no. 26 (December 11, 2009): 23712. http://dx.doi.org/10.1364/oe.17.023712.

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41

Han, Huangpu, Bingxi Xiang, Tao Lin, Guangyue Chai, and Shuangchen Ruan. "Design and Optimization of Proton Exchanged Integrated Electro-Optic Modulators in X-Cut Lithium Niobate Thin Film." Crystals 9, no. 11 (October 24, 2019): 549. http://dx.doi.org/10.3390/cryst9110549.

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In this study, we designed, simulated, and optimized proton exchanged integrated Mach-Zehnder modulators in a 0.5-μm-thick x-cut lithium niobate thin film. The single-mode conditions, the mode distributions, and the optical power distribution of the lithium niobate channel waveguides are discussed and compared in this study. The design parameters of the Y-branch and the separation distances between the electrodes were optimized. The relationship between the half-wave voltage length production of the electro-optic modulators and the thickness of the proton exchanged region was studied.

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42

Yuan Yan, 袁燕, and 秦毅 Qin Yi. "Frequency Sextupling Technique Using Two Cascaded Dual-Electrode Mach-Zehnder Modulators." Chinese Journal of Lasers 38, no. 10 (2011): 1005004. http://dx.doi.org/10.3788/cjl201138.1005004.

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43

He, Hongxia, Shuna Yang, Tao Jin, and Hao Chi. "Photonic quantization using dual-output Mach–Zehnder modulators and balanced photodetectors." Optics Communications 446 (September 2019): 72–76. http://dx.doi.org/10.1016/j.optcom.2019.04.069.

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44

Napoli, Antonio, Mahdi M. Mezghanni, Stefano Calabro, Robert Palmer, Guido Saathoff, and Bernhard Spinnler. "Digital Predistortion Techniques for Finite Extinction Ratio IQ Mach–Zehnder Modulators." Journal of Lightwave Technology 35, no. 19 (October 1, 2017): 4289–96. http://dx.doi.org/10.1109/jlt.2017.2729603.

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45

Cites, J. S., and P. R. Ashley. "High-performance Mach-Zehnder modulators in multiple quantum well GaAs/AlGaAs." Journal of Lightwave Technology 12, no. 7 (July 1994): 1167–73. http://dx.doi.org/10.1109/50.301809.

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46

Xiao, Xi, Hao Xu, Xianyao Li, Zhiyong Li, Tao Chu, Yude Yu, and Jinzhong Yu. "High-speed, low-loss silicon Mach–Zehnder modulators with doping optimization." Optics Express 21, no. 4 (February 11, 2013): 4116. http://dx.doi.org/10.1364/oe.21.004116.

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47

Gliese, Ulrik, Kristina Colladay, Alexander S. Hastings, David A. Tulchinsky, Vincent J. Urick, and Keith J. Williams. "RF Power Conversion Efficiency of Photodiodes Driven by Mach–Zehnder Modulators." IEEE Transactions on Microwave Theory and Techniques 58, no. 11 (November 2010): 3359–71. http://dx.doi.org/10.1109/tmtt.2010.2075530.

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48

Nasr-Storey, S. S. El, S. Détraz, L. Olanterä, C. Sigaud, C. Soós, G. Pezzullo, J. Troska, F. Vasey, and Marcel Zeiler. "Neutron and X-ray irradiation of silicon based Mach-Zehnder modulators." Journal of Instrumentation 10, no. 03 (March 24, 2015): C03040. http://dx.doi.org/10.1088/1748-0221/10/03/c03040.

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49

Thiessen, Torrey, Philippe Grosse, Jeremy Da Fonseca, Patricia Billondeau, Bertrand Szelag, Christophe Jany, Joyce k. S. Poon, and Sylvie Menezo. "30 GHz heterogeneously integrated capacitive InP-on-Si Mach–Zehnder modulators." Optics Express 27, no. 1 (January 2, 2019): 102. http://dx.doi.org/10.1364/oe.27.000102.

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50

Hmood, Jassim K., Siamak D. Emami, Kamarul A. Noordin, Harith Ahmad, Sulaiman W. Harun, and Hossam M. H. Shalaby. "Optical frequency comb generation based on chirping of Mach–Zehnder Modulators." Optics Communications 344 (June 2015): 139–46. http://dx.doi.org/10.1016/j.optcom.2015.01.054.

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Journal articles on the topic 'Mach-Zehnder modulators'

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