Relevant bibliographies by topics / Mach-Zehnder modulators

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Mach-Zehnder modulators'

Author: Grafiati
Published: 4 June 2021
Last updated: 11 February 2022

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Journal articles on the topic "Mach-Zehnder modulators"

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Altwegg, Laurenz. "Properties of polymeric Mach-Zehnder modulators." Optical Engineering 34, no. 9 (September 1, 1995): 2651. http://dx.doi.org/10.1117/12.200606.

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Kawanishi, Tetsuya. "Precise Optical Modulation and Its Application to Optoelectronic Device Measurement." Photonics 8, no. 5 (May 11, 2021): 160. http://dx.doi.org/10.3390/photonics8050160.

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Optoelectronic devices which play important roles in high-speed optical fiber networks can offer effective measurement methods for optoelectronic devices including optical modulators and photodetectors. Precise optical signal modulation is required for measurement applications. This paper focuses on high-speed and precise optical modulation devices and their application to device measurement. Optical modulators using electro-optic effect offers precise control of lightwaves for wideband signals. As examples, this paper describes frequency response measurement of photodetectors using high-precision amplitude modulation and wavelength domain measurement of optical filters using fast optical frequency sweep. Precise and high-speed modulation can be achieved by active trimming which compensates device structure imbalance due to fabrication error, where preciseness can be described by on-off extinction ratio. A Mach-Zehnder modulator with sub Mach-Zehnder interferometors can offer high extinction-ratio optical intensity modulation, which can be used for precise optoelectronic frequency response measurement. Precise modulation would be also useful for multi-level modulation schemes. To investigate impact of finite extinction ratio on optical modulation, duobinary modulation with small signal operation was demonstrated. For optical frequency domain analysis, single sideband modulation, which shifts optical frequency, can be used for generation of stimulus signals. Rapid measurement of optical filters was performed by using an optical sweeper consisting of an integrated Mach-Zehnder modulator for optical frequency control and an arbitrary waveform generator for generation of a source frequency chirp signal.
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Kawanishi, Tetsuya. "Parallel Mach-Zehnder modulators for quadrature amplitude modulation." IEICE Electronics Express 8, no. 20 (2011): 1678–88. http://dx.doi.org/10.1587/elex.8.1678.

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Thomson, David J., Frederic Y. Gardes, Sheng Liu, Henri Porte, Lars Zimmermann, Jean-Marc Fedeli, Youfang Hu, et al. "High Performance Mach–Zehnder-Based Silicon Optical Modulators." IEEE Journal of Selected Topics in Quantum Electronics 19, no. 6 (November 2013): 85–94. http://dx.doi.org/10.1109/jstqe.2013.2264799.

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Yu, J., C. Rolland, D. Yevick, A. Somani, and S. Bradshaw. "Phase-engineered III-V MQW Mach-Zehnder modulators." IEEE Photonics Technology Letters 8, no. 8 (August 1996): 1018–20. http://dx.doi.org/10.1109/68.508723.

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Lawetz, C., J. C. Cartledge, C. Rolland, and J. Yu. "Modulation characteristics of semiconductor Mach-Zehnder optical modulators." Journal of Lightwave Technology 15, no. 4 (April 1997): 697–703. http://dx.doi.org/10.1109/50.566692.

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Sun, Shihao, Mengyue Xu, Mingbo He, Shengqian Gao, Xian Zhang, Lidan Zhou, Lin Liu, Siyuan Yu, and Xinlun Cai. "Folded Heterogeneous Silicon and Lithium Niobate Mach–Zehnder Modulators with Low Drive Voltage." Micromachines 12, no. 7 (July 14, 2021): 823. http://dx.doi.org/10.3390/mi12070823.

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Optical modulators were, are, and will continue to be the underpinning devices for optical transceivers at all levels of the optical networks. Recently, heterogeneously integrated silicon and lithium niobate (Si/LN) optical modulators have demonstrated attractive overall performance in terms of optical loss, drive voltage, and modulation bandwidth. However, due to the moderate Pockels coefficient of lithium niobate, the device length of the Si/LN modulator is still relatively long for low-drive-voltage operation. Here, we report a folded Si/LN Mach–Zehnder modulator consisting of meandering optical waveguides and meandering microwave transmission lines, whose device length is approximately two-fifths of the unfolded counterpart while maintaining the overall performance. The present devices feature a low half-wave voltage of 1.24 V, support data rates up to 128 gigabits per second, and show a device length of less than 9 mm.
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Fu, Yejun, Xiupu Zhang, Bouchaib Hraimel, Taijun Liu, and Dongya Shen. "Mach-Zehnder: A Review of Bias Control Techniques for Mach-Zehnder Modulators in Photonic Analog Links." IEEE Microwave Magazine 14, no. 7 (November 2013): 102–7. http://dx.doi.org/10.1109/mmm.2013.2280332.

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Enami, Yasufumi, Atsushi Seki, Shin Masuda, Tomoki Joichi, Jingdong Luo, and Alex K.-Y. Jen. "Bandwidth Optimization for Mach–Zehnder Polymer/Sol–Gel Modulators." Journal of Lightwave Technology 36, no. 18 (September 15, 2018): 4181–89. http://dx.doi.org/10.1109/jlt.2018.2860924.

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Fuster, J. M., J. Martí, and P. Candelas. "Modeling Mach-Zehnder LiNbO3external modulators in microwave optical systems." Microwave and Optical Technology Letters 30, no. 2 (June 22, 2001): 85–90. http://dx.doi.org/10.1002/mop.1228.

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Dissertations / Theses on the topic "Mach-Zehnder modulators"

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Nguyen, Giang Thach, and thach nguyen@rmit edu au. "Efficient Resonantly Enhanced Mach-Zehnder Optical Modulator on Lithium Niobate." RMIT University. Electrical and Computer Engineering, 2006. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20070118.162330.

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Photonic links have been proposed to transport radio frequency (RF) signals over optical fiber. External optical modulation is commonly used in high performance RF-photonic links. The practical use of optical fiber to transport RF signals is still limited due to high RF signal loss. In order to reduce the RF signal loss, highly efficient modulators are needed. For many applications, modulators with broad bandwidths are required. However, there are applications that require only a narrow bandwidth. For these narrow-band applications, the modulation efficiency can be improved through the resonant enhancement technique at the expense of reduced bandwidth. The aim of this thesis is to investigate highly efficient Mach-Zehnder optical modulators (MZMs) on Lithium Niobate (LiNbO3) with resonant enhancement techniques for narrow-band RF-photonic applications. This work focuses in particular on analyzing the factors that affect the modulation efficiency through resonant enhancement so that the modulator electrode structure can be optimized for maximum modulation efficiency. A parameter study of the effects of the electrode characteristics on the modulation efficiency of resonantly enhanced modulators (RE-MZM) is provided. From this study, optimum design objectives are identified. Numerical optimization is employed to explore the design trade-offs so that optimal configurations can be found. A sensitivity analysis is carried out to assess the performance of optimal RE-MZMs with respect to the variations of fabrication conditions. The results of these investigations indicate that the RE-MZM with a large electrode gap is the optimal design since it provides high modulation efficiency although the inherent switching voltage is high, and is the most tolerant to the fabrication fluctuations. A highly efficient RE-MZM on X-cut LiNbO3 is practically demonstrated with the resonant enhancement factor of 5 dB when comparing to the unenhanced modulator with the same electrode structure and effective switching voltage of 2 V at 1.8 GHz. The performance of the RF-photonic link using the fabr icated RE-MZM is evaluated. Optimization of RE-MZMs for operating at millimeter-wave frequencies is also reported. Factors that limit the modulation efficiency of an RE-MZM at millimeter-wave frequencies are identified. Novel resonant structures that can overcome these limitations are proposed. Preliminary designs indicate that greatly improved modulation efficiency could be expected.
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Peng, Geng 1968. "The waveguide design for wide band Ti : LiNbO3 Mach-Zehnder intensity modulators /." Thesis, McGill University, 1998. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=20798.

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In this thesis, the waveguide design characterization for wide-band Ti : LiNbO3 Mach-Zehnder electro-optical interferometric intensity modulators (Z-cut substrate) has been performed using a combination of the effective index method and the 2D finite-difference vectorial beam propation method (FD-VBPM). For the passive aspect of the device, to minimize the propagation loss, the coherent coupling effect of radiation modes has been studied as well as the effectiveness of a cosine-generated Y-branch and a notched Y-branch in comparison with the conventional sharp-bend Y-branch. By making use of the coherent coupling effect on a notched Y-branch structure, a propagation loss figure of 0.145 dB/cm has been achieved. For the active aspect including the electro-optical effect, the minimum seperation of the two waveguide arms in order to achieve an extinction ratio above 20 dB has been decided and the corresponding modulation curve obtained. The best achieved extinction ratio is 21.8 dB with a 15 mum seperation between the inner edges of two branching arms for a 80 GHz electrode design. Two different electrode structures have been design-tested and compared. Tolerance of the alignment between the optical waveguides and the electrodes has also been determined.
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Peng, Geng. "The waveguide design for wide band Ti:LiNbO¦3 Mach-Zehnder intensity modulators." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0004/MQ44101.pdf.

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Ferguson, Anna. "The design and characterisation of GaAs/AlGaAs waveguides and Mach-Zehnder modulators." Thesis, University of Leeds, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.410758.

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Jones, Warren Richard. "Investigation of Mach-Zehnder modulators in the context of fibre supported mm-wave communications." Thesis, Bangor University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.261414.

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Abel, Stefan. "Dispositifs électro-optiques à base de titanate de baryum épitaxié sur silicium pour la photonique intégrée." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT004/document.

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En premier lieu, des couches minces épitaxiales ont été obtenues sur des substrats de silicium grâce à l’utilisation de l’épitaxie par jets moléculaire et de couches tampons de titanate de strontium SrTiO3. Une technique de croissance par co-déposition a été développée de manière à obtenir un rapport Ba:Ti proche de la stoechiométrie, et ce afin d’éviter la formation de défauts cristallins dans la couche de BaTiO3. Le matériau déposé cristallise dans une structure de symétrie quadratique, ce qui est unpré-requis pour l’obtention de propriétés électro-optiques. De plus, selon les conditions de croissance, l’axe c de la maille élémentaire quadratique a pu être ajusté de manière à être aligné parallèlement ou perpendiculairement à la surface du substrat. L’utilisation d’une mince couche tampon de nucléation a également permis de croitre des films mincesBaTiO3 épitaxiées par pulvérisation, technique largement répandue en milieu industriel.Un coefficient de Pockels élevé a par la suite été obtenu sur de tellescouches épitaxiées. La valeur mesurée de 148pmV est clairement supérieure aux valeurs admises dans la littérature pour d’autres matériaux nonlinéairestels que le niobate de lithium, pour lequel un coefficient de31pmV est rapporté. La méthode de caractérisation électro-optique développée à cette occasion révèle également le caractère ferroélectrique des couches de BaTiO3, observé pour la première fois dans de tels matériaux épitaxiés sur silicium.Finalement, ces couches minces électro-optiquement actives ont été intégrées dans des dispositifs photoniques sur silicium. Dans cette optique,une structure de guide d’onde à fente a été utilisée en insérant 50nm deBaTiO3 entre deux couches de silicium. Dans ce type de structure, le confine mentoptique est 5 fois supérieur à celui obtenu pour des guides d’onde en silicium avec une gaine à base de BaTiO3. Des guides d’ondes rectilignesont tout d’abord été fabriqués, pour lesquels des pertes optiques del’ordre de 50−100 dB/cm ont été mesurées. Par la suite, des composants passifs fonctionnels ont été fabriqués, tels que des interféromètres typeMach-Zehnder, des résonateurs circulaires et des coupleurs. Finalement,la fonctionnalité de composants actifs a été démontrée pour la première fois, en se basant notamment sur des résonateurs ayant un facteur de qualité Q d’environ 5000, et pour lequel la résonance varie en fonction du champ électrique transverse. L’origine physique de cette variation n’a cependant pas pu être expliquée sur la seule base de l’effet Pockels. Cette thèse démontre que l’utilisation de nouveaux matériaux électro optiquement actifs au coeur de dispositifs photoniques sur silicium créede nouvelles opportunités pour la conception et l’ingénierie de circuitsphotoniques. L’intégration d’oxydes tels que barium titanate permet d’envisager de nouveaux concepts de dispositifs pour ajuster, moduler ou commuter la lumière au sein de circuits photoniques denses. De nouveaux défis et perspectives s’ouvrent également aux scientifiques pour modifier artificiellement les propriétés électro-optiques de ces matériaux, que ce soit par contrainte, dopage ou par l’ingénierie de multicouches. De telles avancées pourront sans aucun doute fortement améliorer les performances des dispositifs
A novel concept of utilizing electro-optical active oxides in silicon photonic devices is developed and realized in the frame of this thesis. The integration of such oxides extends the silicon photonics platform by non-linear materials, which can be used for ultra-fast switching or low-power tuning applications. Barium titanate is used as active material as it shows one of the strongest Pockels coefficients among all oxides. Three major goals are achieved throughout this work: First, thin films of BaTiO3 are epitaxially grown on silicon substrates via molecular beam epitaxy (MBE) using thin SrTiO3 buffer layers. A shuttered co-deposition growth technique is developed in order to minimize the formation of defects in the BaTiO3 films by achieving a 1:1 stoichiometry between barium and titanium. The layers show a tetragonal symmetry and are therefore well-suited for electro-optical applications. The orientation of the long c -axis of the BaTiO3 crystal can be tuned to point perpendicular or parallel to the film surface, depending on the growth conditions. In addition, thin MBE-grown seed layers are combined with rf-sputter deposition. With this hybrid growth approach, rather thick ( > 100 nm), epitaxial BaTiO3 layers on silicon substrates are obtained with a commercially available, wide spread deposition technique. As a second goal, a strong Pockels coefficient of reff = 148 pm/V is determined in the epitaxial BaTiO3 films. This first experimental result on the electro-optical activity of BaTiO3 layers on silicon shows a clear enhancement compared to alternative non-linear materials such as lithium niobate with reff = 31 pm/V. By means of the electro-optical characterization method, also the presence of ferroelectricity in the films is demonstrated. Third, the electro-optical active BaTiO3 layers are embedded into silicon photonic devices. For this purpose, a horizontal slot-waveguide structure with a ~50 nm-thick BaTiO3 film sandwiched between two silicon layers is designed. With this design, the optical confinement in the active BaTiO3 layer is enhanced by a factor of 5 compared to Si-waveguide structures with a standard cross section and BaTiO3 as cladding. Straight BaTiO3 slot-waveguides with propagation losses of 50 − 100 dB/cm as well as functional passive devices such as Mach-Zehnder-interferometers, couplers, and ring resonators are experimentally realized. Additionally, first active ring resonators with Q-factors of Q~5000 are fabricated. The physical origin of the observed resonance shift as a function of the applied bias voltage, however, can not be conclusively clarified in the present work. The combination of high-quality, functional BaTiO3 layers with silicon photonic devices as demonstrated in this thesis offers new opportunities by extending the design palette for engineering photonic circuits with the class of electro-opticalactive materials. The integration of oxides such as BaTiO3 enables novel device concepts for tuning, switching, and modulating light in extremely dense photonic circuits. The integration also opens exciting challenges for material scientists to tailor the electro-optical properties of those oxides by strain engineering or fabrication of superlattice structures, which could ultimately lead to another boost of their electro-optical properties
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Giuglea, Alexandru, Guido Belfiore, Mahdi Khafaji, Ronny Henker, Despoina Petousi, Georg Winzer, Lars Zimmermann, and Frank Ellinger. "Comparison of Segmented and Traveling-Wave Electro-Optical Transmitters Based on Silicon Photonics Mach-Zehnder Modulators." Institute of Electrical and Electronics Engineers (IEEE), 2018. https://tud.qucosa.de/id/qucosa%3A35393.

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This paper presents a brief study of the two most commonly used topologies - segmented and traveling-wave - for realizing monolithically integrated electro-optical transmitters consisting of Si-photonics Mach-Zehnder modulators and their electrical drivers. To this end, two new transmitters employing high swing breakdown voltage doubler drivers were designed in the aforementioned topologies and compared with regard to their extinction ratio and DC power consumption at the data rate of 30 Gb/s. It is shown that for the targeted data rate and extinction ratio, a considerably lower power consumption can be achieved with the traveling-wave topology than with its segmented counterpart. The transmitters were realized in a 250 nm SiGe BiCMOS electronic-photonic integrated technology.
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Aimone, Alessandro [Verfasser], Martin [Akademischer Betreuer] Schell, Martin [Gutachter] Schell, and Antonella [Gutachter] Bogoni. "InP segmented Mach-Zehnder modulators with advanced EO functionalities / Alessandro Aimone ; Gutachter: Martin Schell, Antonella Bogoni ; Betreuer: Martin Schell." Berlin : Technische Universität Berlin, 2016. http://d-nb.info/1156016681/34.

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Ferrotti, Thomas. "Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEC054/document.

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Depuis plusieurs années, le volume de données échangé à travers le monde augmente sans cesse. Pour gérer cette large quantité d’information, des débits élevés de transmission de données sur de longues distances sont essentiels. Puisque les interconnections à base de cuivre ne peuvent pas suivre cette tendance, des systèmes de transmission optique rapides sont requis dans les centre de données. Dans ce contexte, la photonique sur silicium est considérée comme une solution pour obtenir des circuits photoniques intégrés à un coût réduit. Bien que cette technologie ait connu une croissance significative au cours de la dernière décennie, les transmetteurs actuels à haut débit de transmission sont principalement basés sur des sources laser externes. Par conséquent, l’objectif de ce travail de thèse était de concevoir et produire un transmetteur à haut débit de transmission de données pour la photonique sur silicium, doté d’une source laser intégrée.Ce transmetteur se compose d’un modulateur silicium de type Mach-Zehnder, co-intégré sur la même plaque avec un laser hybride III-V sur silicium à réseaux de Bragg distribués, dont la longueur d’onde d’émission peut être contrôlée électriquement autour de 1.3μm. La conception des différents éléments constituant à la fois le laser (coupleurs adiabatique entre le III-V et le silicium, miroirs de Bragg) et le modulateur (jonctions p-n, électrodes à ondes progressives) est détaillée, de même que leur fabrication. Pendant la caractérisation des transmetteurs, des taux de transmission de données jusqu’à 25Gb/s, pour des distances allant jusqu’à 10km ont été démontrés avec succès, avec la possibilité de contrôler la longueur d’onde jusqu’à 8.5nm. Par ailleurs, afin d’améliorer l’intégration de la source laser avec le circuit photonique sur silicium, une solution basée sur le dépôt à basse température (en-dessous de 400°C) d’une couche de silicium amorphe pendant la fabrication est aussi évaluée. Des tests sur une cavité laser à contre-réaction distribuée ont montré des performances au niveau de l’état de l’art (avec des puissances de sortie supérieures à 30mW), prouvant ainsi la viabilité de cette approche
For several years, the volume of digital data exchanged across the world has increased relentlessly. To manage this large amount of information, high data transmission rates over long distances are essential. Since copper-based interconnections cannot follow this tendency, high-speed optical transmission systems are required in the data centers. In this context, silicon photonics is seen as a way to obtain fully integrated photonic circuits at an expected low cost. While this technology has experienced significant growth in the last decade, the high-speed transmitters demonstrated up to now are mostly based on external laser sources. Thus, the aim of this PhD thesis was to design and produce a high-speed silicon photonic transmitter with an integrated laser source.This transmitter is composed of a high-speed silicon Mach-Zehnder, co-integrated on the same wafer with a hybrid III-V on silicon distributed Bragg reflector laser, which emission wavelength can be electrically tuned in the 1.3μm wavelength region. The design of the various elements constituting both the laser (III-V to silicon adiabatic couplers, Bragg reflectors) and the modulator (p-n junctions, travelling-wave electrodes) is thoroughly detailed, as well as their fabrication. During the characterization of the transmitters, high-speed data transmission rates up to 25Gb/s, for distances up to 10km are successfully demonstrated, with the possibility to tune the operating wavelength up to 8.5nm. Additionally, in order to further improve the integration of the laser source with the silicon photonic circuit, a solution based on the low-temperature (below 400°C) deposition of an amorphous silicon layer during the fabrication process is also evaluated. Tests on a distributed feed-back laser structure have shown performances at the state-of-the-art level (with output powers above 30mW), thus establishing the viability of this approach
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Bhatambrekar, Nishant. "Realizing a fractional volt half-wave voltage in Mach-Zehnder modulators using a DC biased push-pull method and synthesis and characterization of indole based NLO chromophores for improving electro-optic activity /." Thesis, Connect to this title online; UW restricted, 2006. http://hdl.handle.net/1773/11606.

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Books on the topic "Mach-Zehnder modulators"

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Center, Lewis Research, ed. Investigation of a GaAlAs Mach-Zehnder electro-optic modulator. [Cleveland, Ohio]: The Center, 1987.

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Book chapters on the topic "Mach-Zehnder modulators"

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Girton, D. G., W. W. Anderson, J. F. Valley, T. E. Van Eck, L. J. Dries, J. A. Marley, and S. Ermer. "Electrooptic Polymer Mach—Zehnder Modulators." In ACS Symposium Series, 456–68. Washington, DC: American Chemical Society, 1995. http://dx.doi.org/10.1021/bk-1995-0601.ch033.

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Kawanishi, Tetsuya. "Integrated Mach–Zehnder Interferometer-Based Modulators for Advanced Modulation Formats." In High Spectral Density Optical Communication Technologies, 273–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10419-0_15.

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Gan, F. Y., and G. L. Yip. "Traveling Wave Electrode Design for High Speed Mach-Zehnder LiNbO3 Intensity Modulators." In Applications of Photonic Technology 2, 469–75. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4757-9250-8_76.

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Jesuwanth Sugesh, R. G., and A. Sivasubramanian. "Redesigning Mach-Zehnder Modulator with Ring Resonators." In Lecture Notes in Electrical Engineering, 185–91. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-7293-2_20.

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Das Barman, Abhirup, Arnav Mukhopadhyay, and Antonella Bogoni. "Energy-Efficient Frequency Octupling Using Mach–Zehnder Optical Modulator." In Computers and Devices for Communication, 244–49. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-15-8366-7_34.

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Zhou, Yi, M. Izutsu, and T. Sueta. "Asymmetric Mach-Zehnder Band Modulator with Phase Reversed Traveling-Wave Electrode." In Photonic Switching II, 88–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76023-5_17.

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Cusumano, P., and G. Lullo. "An Example of Ti:LiNbO3 Device Fabrication: The Mach-Zehnder Electrooptical Modulator." In Advances in Integrated Optics, 207–12. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2566-0_13.

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Bortsov, Alexander A., Yuri B. Il’in, and Sergey M. Smolskiy. "Operation Analysis of Optoelectronic oscillator (OEO) with External Mach–Zehnder Modulator." In Springer Series in Optical Sciences, 285–366. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-45700-6_6.

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Tonchev, S., B. Yordanov, M. Kuneva, I. Savatinova, M. Armenise, and V. Passaro. "Waveguide Mach-Zehnder Intensity Modulator produced via Proton Exchange Technology in LiNbO3." In Devices Based on Low-Dimensional Semiconductor Structures, 293–96. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0289-3_18.

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Zacharias, Joseph, V. Civin, and Vijayakumar Narayanan. "Improving Dynamic Range of RoF System Using Dual-Drive Mach-Zehnder Modulator." In Lecture Notes in Electrical Engineering, 123–30. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7395-3_13.

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Conference papers on the topic "Mach-Zehnder modulators"

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Prosyk, Kelvin, Abderrahmane Ait-Ouali, Junfu Chen, Michael Hamacher, Detlef Hoffmann, Ronald Kaiser, Ron Millett, et al. "Travelling wave Mach-Zehnder modulators." In 2013 25th International Conference on Indium Phosphide and Related Materials (IPRM). IEEE, 2013. http://dx.doi.org/10.1109/iciprm.2013.6562568.

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Sorace, Cheryl, Anatol Khilo, and Franz X. Kärtner. "Broadband Linear Silicon Mach-Zehnder Modulators." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/iprsn.2010.iwa4.

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Wei, Yuxin, Yong Zhao, Guoyi Li, Jianyi Yang, Minghua Wang, and Xiaoqing Jiang. "Chirp characteristics of silicon Mach-Zehnder modulators." In 2010 Asia Communications and Photonics Conference and Exhibition (ACP 2010). IEEE, 2010. http://dx.doi.org/10.1109/acp.2010.5682510.

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Wei, Yuxin, Yong Zhao, Guoyi Li, Jianyi Yang, Minghua Wang, and Xiaoqing Jiang. "Chirp Characteristics of Silicon Mach-Zehnder Modulators." In Asia Communications and Photonics Conference and Exhibition. Washington, D.C.: OSA, 2010. http://dx.doi.org/10.1364/acp.2010.798707.

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Burla, M., W. Heni, C. Hoessbacher, D. Werner, Y. Fedoryshyn, J. Leuthold, D. L. Elder, and L. R. Dalton. "Nonlinear Distortions in Plasmonic Mach-Zehnder Modulators." In 2018 International Topical Meeting on Microwave Photonics (MWP). IEEE, 2018. http://dx.doi.org/10.1109/mwp.2018.8552901.

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Wei, Yuxin, Yong Zhao, Guoyi Li, Jianyi Yang, Minghua Wang, and Xiaoqing Jiang. "Chirp characteristics of silicon Mach-Zehnder modulators." In Asia Communications and Photonics Conference and Exhibition, edited by Fumio Koyama, Shun Lien Chuang, Guang-Hua Duan, and Yidong Huang. SPIE, 2010. http://dx.doi.org/10.1117/12.888448.

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Gu, Lanlan, Wei Jiang, Yongqiang Jiang, Xiaonan Chen, and Ray T. Chen. "Photonic-crystal-waveguide-based Silicon Mach-Zehnder Modulators." In Nanophotonics. Washington, D.C.: OSA, 2006. http://dx.doi.org/10.1364/nano.2006.nwa3.

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Kikuchi, Nobuhiro, Ken Tsuzuki, Mitsuteru Ishikawa, Takako Yasui, Yasuo Shibata, and Hiroshi Yasaka. "InP Mach-Zehnder Modulators for Advanced Modulation Formats." In Integrated Photonics and Nanophotonics Research and Applications. Washington, D.C.: OSA, 2008. http://dx.doi.org/10.1364/ipnra.2008.ima4.

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Ku, P. C., C. J. Chang-Hasnain, J. Kim, and S. L. Chuang. "Ultra low Vπ Mach-Zehnder modulators using EIT." In Frontiers in Optics. Washington, D.C.: OSA, 2003. http://dx.doi.org/10.1364/fio.2003.thmm1.

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Kunkee, Elizabeth, Richard Davis, and Andrew D. Smith. "Mach-Zehnder quantum well modulators for aerospace applications." In 2008 IEEE Avionics, Fiber-Optics and Photonics Technology Conference (AVFOP). IEEE, 2008. http://dx.doi.org/10.1109/avfop.2008.4653174.

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