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Academic literature on the topic 'LPCVD'

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Published: 4 June 2021
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Journal articles on the topic "LPCVD"

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Huang, Tiao‐Yuan, Donald J. Coleman, and James L. Paterson. "LPCVD Oxide/LPCVD Nitride Stacks for Interpoly Dielectrics." Journal of The Electrochemical Society 132, no. 6 (June 1, 1985): 1406–9. http://dx.doi.org/10.1149/1.2114133.

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Wang, Shaoqing, Wei Ji, Yaru Wang, Jiantao Wei, Lianchang Qiu, Chong Chen, Xiaojun Jiang, Qingxuan Ran, and Rihong Han. "Comparative Study of Corrosion Behavior of LPCVD-Ti0.17Al0.83N and PVD-Ti1−xAlxN Coatings." Coatings 12, no. 6 (June 15, 2022): 835. http://dx.doi.org/10.3390/coatings12060835.

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In the present work, a low-pressure chemical vapor deposition (LPCVD) Ti0.17Al0.83N and state-of-the-art arc ion plating PVD-Ti1−xAlxN (x = 0.25, 0.55, 0.60, 0.67) coatings were deposited on cemented carbide substrate. The morphological, structural, and electrochemical properties of LPCVD-Ti0.17Al0.83N and PVD-Ti1−xAlxN coatings were compared. The X-ray diffraction (XRD) results and scanning electron microscopy (SEM) images revealed that the LPCVD-Ti0.17Al0.83N coating had a face-centered cubic (fcc) structure, while presenting a crack-free surface morphology and a compressive residual stress of −131.9 MPa. The PVD coatings with a composition of x ≤ 0.60 had an fcc structure, while the PVD-Ti0.33Al0.67N coating consisted of fcc and w-AlN phases. The results of the electrochemical corrosion test showed that the LPCVD-Ti0.17Al0.83N coating had the lowest corrosion current density in a 3.5 wt.% NaCl solution. After a 20-day immersion corrosion test in a 5 mol/L HCl solution, the LPCVD-Ti0.17Al0.83N coating displayed higher stability than the PVD-Ti1−xAlxN coating. The results of electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) analysis revealed that more uniform and denser passivation film, as well as higher Al2O3 proportion in the Al2O3/TiO2 composite passive layer, led to the outstanding corrosion resistance of the LPCVD-Ti0.17Al0.83N coating.
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Parkhomenko, I. N., I. A. Romanov, M. A. Makhavikou, L. A. Vlasukova, G. D. Ivlev, F. F. Komarov, N. S. Kovalchuk, et al. "Effect of thermal and pulse laser annealing on photoluminescence of CVD silicon nitride films." Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series 55, no. 2 (June 28, 2019): 225–31. http://dx.doi.org/10.29235/1561-2430-2019-55-2-225-231.

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The light-emitting properties of Si-rich silicon nitride films deposited on the Si (100) substrate by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) have been investigated. In spite of the similar stoichiometry (SiN1.1), nitride films fabricated by different techniques emit in different spectral ranges. Photoluminescence (PL) maxima lay in red (640 nm) and blue (470 nm) spectral range for the PECVD and LPCVD SiN1.1 films, respectively. It has been shown that equilibrium furnace annealing and laser annealing by ruby laser (694 nm, 70 ns) affect PL spectra of PECVD and LPCVD SiN1.1 in a different way. Furnace annealing at 600 °C results in a significant increase of the PL intensity of the PECVD film, while annealing of LPCVD films result only in PL quenching. It has been concluded that laser annealing is not appropriate for the PECVD film. The dominated red band in the PL spectrum of the PECVD film monotonically decreases with increasing an energy density of laser pulses from 0.45 to 1.4 J/cm2. Besides, the ablation of PECVD nitride films is observed after irradiation by laser pulses with an energy density of > 1 J/cm2. This effect is accompanied by an increase in blue emission attributed to the formation of a polysilicon layer under the nitride film. In contrast, the LPCVD film demonstrates the high stability to pulsed laser exposure. Besides, an increase in the PL intensity for LPCVD films is observed after irradiation by a double laser pulse (1.4 + 2 J/cm2) which has not been achieved by furnace annealing.
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Ghadi, Hemant, Joe F. McGlone, Evan Cornuelle, Zixuan Feng, Yuxuan Zhang, Lingyu Meng, Hongping Zhao, Aaron R. Arehart, and Steven A. Ringel. "Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3." APL Materials 10, no. 10 (October 1, 2022): 101110. http://dx.doi.org/10.1063/5.0101829.

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This study provides the full-bandgap evaluation of defect state distributions in beta phase gallium oxide (β-Ga2O3) grown by low-pressure chemical vapor deposition (LPCVD) on (010) β-Ga2O3 substrates at high growth of up to 20 µm/h. Deep-level optical spectroscopy and deep-level transient spectroscopy measurements applied to Ni/β-Ga2O3 Schottky diodes revealed the presence of a previously unreported defect state at EC-3.6 eV, which dominated the overall trap distribution in LPCVD grown material. However, states at EC-0.8 eV, EC-2.0 eV, and EC-4.4. eV were also detected, similar to prior studies on β-Ga2O3 grown by other methods, with similar or lower concentrations for the LPCVD samples. The EC-0.8 eV and EC-2.0 eV states were previously connected to residual Fe impurities and gallium vacancies, respectively. The total concentration of traps in the LPCVD material was on par with or lower than the state-of-the-art metal–organic chemical vapor deposition-grown materials despite the much higher growth rate, and the distribution of states showed negligible dependence on SiCl4 flow rate and doping concentration. These results demonstrate that the high growth rate of LPCVD-grown β-Ga2O3 is very promising for achieving thick, low defect density, and high-quality layers needed for multi-kV device applications.
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Lifshitz, N., D. S. Williams, C. D. Capio, and J. M. Brown. "Selective Molybdenum Deposition by LPCVD." Journal of The Electrochemical Society 134, no. 8 (August 1, 1987): 2061–67. http://dx.doi.org/10.1149/1.2100820.

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Yokoyama, N., K. Hinode, and Y. Homma. "LPCVD Titanium Nitride for ULSIs." Journal of The Electrochemical Society 138, no. 1 (January 1, 1991): 190–95. http://dx.doi.org/10.1149/1.2085535.

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LOISEL, B., L. HAJI, and M. GUENDOUZ. "LPCVD SILICON FOR ACTIVE DEVICES." Le Journal de Physique Colloques 50, no. C5 (May 1989): C5–467—C5–477. http://dx.doi.org/10.1051/jphyscol:1989558.

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Bourhila, N., J. Torres, J. Palleau, C. Bernard, and R. Madar. "Copper LPCVD for advanced technology." Microelectronic Engineering 33, no. 1-4 (January 1997): 25–30. http://dx.doi.org/10.1016/s0167-9317(96)00027-5.

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Chen, W. H., T. F. Lei, T. S. Chao, K. S. Chou, and Y. N. Liu. "Particle contaminations in LPCVD polysilicon." Electronics Letters 31, no. 3 (February 2, 1995): 239–41. http://dx.doi.org/10.1049/el:19950114.

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Zambov, L. M. "Optimum Design of LPCVD Reactors." Le Journal de Physique IV 05, no. C5 (June 1995): C5–269—C5–276. http://dx.doi.org/10.1051/jphyscol:1995531.

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Dissertations / Theses on the topic "LPCVD"

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Cordier, Céline. "Modélisation des dépôts LPCVD de SIPOS." Toulouse, INPT, 1996. http://www.theses.fr/1996INPT017G.

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L'objectif general de ce travail consiste a analyser et a modeliser l'operation industrielle de depot de silicium partiellement oxyde, ou sipos, elabore par un procede de type lpcvd, a partir de melanges de silane sih#4, ou de disilane si#2h#6, et de protoxyde d'azote n#2o. La premiere phase de ce travail correspond a l'analyse detaillee des mecanismes chimiques susceptibles de se produire au cours de l'operation de depot, dans la phase homogene comme sur les surfaces, puis a l'elaboration d'un schema representatif des phenomenes reels et simple d'utilisation. Les constantes cinetiques relatives aux reactions homogenes sont evaluees grace a diverses methodes de calcul previsionnel dont la methode qrrk. La seconde partie comprend le developpement et l'exploitation d'un logiciel de simulation du fonctionnement des reacteurs tubulaires de cvd, qui calcule, dans un espace inter-plaquettes particulier, les champs de vitesse et de concentration en tenant compte des reactions chimiques. Ce modele a tout d'abord permis d'identifier les constantes cinetiques de depot inconnues, puis d'etudier, pour les deux filieres, l'influence systematique de certains parametres operatoires sur les depots, l'evolution des caracteristiques des couches le long de la charge, les problemes d'heterogeneites d'epaisseur et de composition au niveau de chaque substrat. Pour les deux procedes, un accord satisfaisant a ete observe entre les resultats theoriques et les valeurs experimentales, ce qui permet de valider les choix effectues au niveau des schemas chimiques et de leur mise en equation d'une part, et des hypotheses du modele d'autre part. Une derniere partie concerne la modelisation de l'operation de depot de sipos dans le reacteur secteur, modele reduit d'un equipement de conception originale, le reacteur annulaire. L'utilisation de deux logiciels de calcul, adaptes au cas du sipos a l'aide des mecanismes precedemment etablis, a permis de retrouver, sans modification supplementaire, l'ensemble des resultats experimentaux obtenus
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KRISHT, MUHAMMED HUSSEIN, and MUHAMMED HUSSEIN KRISHT. "LPCVD TUNGSTEN MULTILAYER METALLIZATION FOR VLSI SYSTEMS." Diss., The University of Arizona, 1985. http://hdl.handle.net/10150/187983.

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Advances in microlithography, dry etching, scaling of devices, ion-implantation, process control, and computer aid design brought the integrated circuit technology into the era of VLSI circuits. Those circuits are characterized by high packing density, improved performance, complex circuits, and large chip sizes. Interconnects and their spacing dominate the chip area of VLSI circuits and they degrade the circuit performance through the unacceptable high time delays. Multilayer metallization enables shorter interconnects, ease of design and yet higher packing density for VLSI circuits. It was shown in this dissertation that, tungsten films deposited in a cold-wall LPCVD reactor offer viable solution to the problems of VLSI multilayer interconnects. Experiments showed that LPCVD tungsten films have good uniformity, high purity, low resistivity, low stress-good adherence and are readily patterned into high resolution lines. Moreover, a multilayer interconnect system consisting of three layers of tungsten metallization followed by a fourth layer of aluminum metallization has been designed, fabricated and tested. The interlevel dielectric used to separate the metal layers was CVD phosphorus doped silicon dioxide. Low ohmic contacts were achieved for heavily doped silicon. Also, low resistance tungsten-tungsten intermetallic contacts were obtained. In addition to excellent step coverage, high electromigration resistance of interconnects was realized. Finally, CMOS devices and logic gates were successfully fabricated and tested using tungsten multilayer metallization schemes.
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Rodolpho, Augusto Cesar. "Contribuição a simulação computacional do processo de LPCVD." [s.n.], 1990. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259953.

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Orientador: Vitor Baranauskas
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica
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Resumo: Este trabalho foi dedicado ao estudo e simulação do processo de LPCVD-Deposição Químka à partir da Fase Vapor sob Baixa Pressão. A deposição de silício por decomposição pirolítka de silana foi tomada como reação básica devido à sua importância e simplicidade, sem contudo perder-se a generalidade do tratamento adotado. Inkialmente é apresentado o processo de CVD à pressão atmosférica, como entendido pela teoria da camada limite. A seguir é discutido o processo de LPCVD. A textura do filme depositado e os micromecanismos de reação são analisados, o que leva à uma equação para a taxa de reação. Através de equações apropriadas são identificados os fatores principais que influenciam a uniformidade axial (de lâmina para lâmina) e radial (em uma lâmina) do filme depositado. Assumindo as restrições: (i) não há gradiente radial de temperatura, (ii) o crescimento é limitado por cinética de superfície e (iii) o transporte é realizado por fluxo laminar na região entre as paredes do reator e as lâminas e por difusão gasosa na região entre-lâminas, é sugerido um modelo para simulação de LPCVD, que considera: (a) a região vazia de entrada, (b) a expansão molar do gás e (c) a depleção de reagentes ao longo da direção principal do fluxo. O modelo desenvolvido apresentou resultados satisfatórios, tempo de computação bastante reduzido e um tratamento matemático mais simples que aqueles encontrados na literatura, modelos estes que utilizaram as mesmas restrições e considerações (i}-(iii) e (a)-(c). Finalmente as tendências em CVD são apresentadas e discutidas. Tendências estas que apontam para sistemas do tipo lâmina única, de paredes frias, com monitoração in situ e intenso controle computadorizado
Abstract: This work deals with the study and simulation of LPCVD-Low Pressure Chemical Vapour Deposition- a basic process for thin film deposition. The reaction of silicon deposition by silane pyrolisis is adopted for its simplicity and importance without sacrifieing the quality of treatment. To begin with, we present the atmospheric presure CVD technique in the light of the boudary layer theory. Later we discuss the LPCVD process. The texture of the film deposited and the micromechanisms of the said reaction are analysed, as a function of the inputs. Using the derived equations, we identify the main factors that influence the axial homogeneity (wafer to wafer) as well as the radial homogeneity (within the wafer) df the deposited filmo Assuming the restrictions: i) there is no radtial temperature gradient, ii) the growth is limited by surface kinetics, and iii) transport is due to a laminar flow in the annular region and gaseous diffusion in the space intra-wafers, an interesting model is sugested to the simulation of the batch type, hot wall, LPCVD reactor, taking into account: (a) the empty inlet tube, (b) the molar expansion of the gas, and (c) the depletion of reactants along the main flow direction. The developed method of simulation provides satislactory results with reduced computer processing time and a rather simpler mathematical evaluation when compared with proposed models in literature, using the same restrictions and conditions. Finally, the future trends in CVD processing are in brief presented. They point to single wafer, cold wall, photo- and plasma assisted systems with in situ measurements and intense computerized control
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Pinto, Emilio Sergio Marins Vieira. "Sintese e caracterização de nanocristais de Ge por LPCVD." [s.n.], 2006. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259199.

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Orientador: Ioshiaki Doi
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
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Resumo: Nesta dissertação estudamos a obtenção de nanocristais (NCs) de Ge pela técnica de LPCVD (Low Pressure Chemical Vapor Deposition), buscando otimizar as condições de processo que resultassem em NCs com características de tamanho, densidade por unidade de área e uniformidade de tamanhos, que são necessárias para aplicação em dispositivos de memórias de porta flutuante. Os NCs foram fabricados por processo de dois passos: 1) formação de núcleos de Si na superfície do SiO2, a partir de silana (SiH4); 2) crescimento de Ge sobre os núcleos de Si através de deposição de germana (GeH4). Realizamos ciclos de deposição e caracterização das amostras, e os parâmetros de processo: temperatura, pressão total, fluxos de silana e germana e tempo de deposição, foram alterados convenientemente, com base na literatura e nos resultados obtidos a cada ciclo de fabricação. As amostras foram caracterizadas quanto à morfologia, por microscopia de força atômica (AFM) e a estrutura dos NCs foi analisada por microscopia eletrônica de transmissão de alta resolução (HRTEM). Estudamos a influência dos parâmetros de processo nas características dos NCs e observamos tendências de aumento da densidade de NCs com a elevação da temperatura, pressão total e fluxo de SiH4 do passo 1. E, o tamanho dos NCs tendem a diminuir com a redução da temperatura, pressão total e tempo de deposição do passo 2. Os resultados mostram que com os parâmetros: 600 ºC / 5 Torr / 20 sccm de SiH4 / 20 seg. para a nucleação de Si e 550 ºC / 2 Torr / 5 sccm / 30 seg. para a deposição de Ge, é possível obter alta densidade de NCs por unidade área de 4x1010 NCs/cm2 com diâmetro médio de 19 nm e altura média de 4,5 nm
Abstract: In this thesis we studied the synthesis of Ge nanocrystals (NCs) by the LPCVD technique (Low Pressure Chemical Vapor Deposition). We looked for NCs with characteristics of sizes, density and uniformity of sizes that are necessary for applications in floating gate memory devices. To reach those characteristics we have optimized the process conditions. The NCs were fabricated by a process of two steps: 1) formation of Si nuclei on SiO2 surface, through the silane (SiH4) decomposition; 2) Ge growth on Si nuclei through germane (GeH4) deposition. We accomplished deposition cycles and characterization of the samples. The process parameters: temperature, total pressure, silana and germana flow and deposition time, were altered conveniently based on the literature and results obtained at each production cycle. The morphology of the samples was analyzed by atomic force microscopy (AFM) and the NCs structures were analyzed by high resolution transmission electron microscopy (HRTEM). We studied the influence of the process parameters in the NCs characteristics and we have observed tendencies of NCs density increase with rise of the temperature, total pressure and SiH4 flow of step 1. The NCs size tends to decrease with the reduction of temperature, total pressure and deposition time of step 2. The results show that with the parameters: 600 ºC / 5 Torr / 20 sccm de SiH4 / 20 sec. for the Si nucleation and 550 ºC / 2 Torr / 5 sccm / 30 sec. for the Ge deposition, it¿s possible to reach a high density of NCs (4x1010 NCs/cm2) with diameter of 19 nm and average height of 4,5 nm
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Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
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Boukezzata, Messaoud. "Mecanismes d'oxydation des si-lpcvd fortement dopes au bore." Toulouse 3, 1988. http://www.theses.fr/1988TOU30183.

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Etude de la cinetique et des mecanismes d'oxydation thermique de films dopes a 210**(20) cm**(-3) b "in situ" et par implantation post-depot. Les resultats prennent en compte les influences du mode de dopage et de la microstructure initiale des films (qui varie d'un etat quasi-amorphe a un etat nettement polycristallin). Leur analyse s'appuie sur a) un logiciel de modelisation de l'oxydation de si et la comparaison avec la cinetique d'oxydation de temoins monocristallins qui permettent de les exprimer en termes de constante de diffusion d et de la vitesse de reaction de surface k::(s) de l'oxydation, b) la comparaison entre depots non dopes, dopes a b par implantation ou "in situ" et c) le suivi des proprietes structurales (rugosite, diagrammes rheed, observations tem) et electroniques des films
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Trainor, Michael. "Studies of low pressure chemical vapour deposition (LPCVD) of polysilicon." Thesis, University of Strathclyde, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291988.

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Boukezzata, Messaoud. "Mécanismes d'oxydation des films Si-LPCVD fortement dopés au bore." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37612180t.

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Ren, Yuxing. "Experiments on the elastic size dependence of LPCVD silicon nitride /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?MECH%202004%20REN.

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Zahi, Ilyes. "Modélisation multi-échelles des mécanismes de nucléation/croissance lors de la synthèse de nanoplots de silicium par LPCVD pour les nouvelles générations de mémoires non volatiles." Thesis, Toulouse, INPT, 2009. http://www.theses.fr/2009INPT017G/document.

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L'industrie de la microélectronique est en perpétuelle évolution, surtout concernant la diminution des dimensions des composants. Ainsi, pour les nouvelles générations de mémoires non volatiles Flash, le poly-silicium de la grille flottante pourrait être remplacé par des nanoplots discrets de silicium. L'élaboration de ces nanoplots par LPCVD (Low Pressure Chemical Vapor Deposition) à partir de silane SiH4 sur un substrat amorphe SiO2 demeure l'une des voies privilégiées par l'industrie. Le fonctionnement de ce type de mémoires est fortement dépendant des conditions de synthèse des nanoplots de silicium. Ce travail de cette thèse visait donc à améliorer la compréhension des mécanismes de nucléation et de croissance en jeu. Nous avons étudié les premiers instants de la nucléation en chimie quantique, grâce à l'utilisation de la théorie DFT, en considérant l'oxyde de silicium comme surface de dépôt. Des lois cinétiques intrinsèques ont été tirées de ces résultats DFT et elles ont été implémentées dans un modèle de simulation à l'échelle du procédé industriel, sur la base du code de CFD Fluent. Pour la nucléation, il est apparu que seul le silylène, SiH2, peut se chimisorber à la surface du substrat. De plus, sa faible concentration et la première désorption de H2, qui est très lente, expliquent le temps d'incubation. Pour la croissance, le caractère auto-catalytique des dépôts a été expliqué par la contribution très forte du silane au dépôt dès la seconde chimisorption. L'étape limitant la croissance est clairement la désorption de H2. La réalisation d'essais expérimentaux et la comparaison avec le modèle multi-échelles issu de notre travail a permis d'expliquer pourquoi les cinétiques classiques de la littérature surestiment la vitesse de dépôt des nanoplots. Il est aussi apparu que la vitesse de dépôt du silicium sur des nanoplots en croissance est plus forte que celle d'un film de silicium continu « épais ». La prise en compte des sites de chimisorption lors des premiers instants et la description détaillée de la désorption de H2 sont des paramètres clés pour rendre compte du comportement des dépôts de nanoplots de silicium
The need of high integrated systems of the everyday life involves a permanent evolution of the microelectronic industry. Integrated circuits involving non volatile Flash memories are good examples of these trends. In this technology, the poly-silicon floating gate could be replaced by a discrete trap floating gate in which discrete traps are made up of silicon nanodots. The synthesis of nanodots by LPCVD (Low Pressure Chemical Vapor Deposition) from silane SiH4 on SiO2 surfaces remains one of the most promising ways of industrial synthesis. Despite a huge experimental effort, fundamental understanding of the key mechanisms of nanodots nucleation and growth remains elusive. Here we find the main objectives of the thesis. For nucleation, our main results reveal that only silylene SiH2 is involved in the very first steps of nucleation. The incubation time experimentally observed can be explained by the low SiH2 concentration and the first slow H2 desorption process. For growth, silane is the main responsible for deposition, which explains the autocatalytic behaviour of silicon deposition. The growth limiting step is clearly the H2 desorption process. Comparisons between experimental and multiscale modelling allow to explain why classical kinetics of the literature overestimate nanodots deposition rate. We have found that the silicon deposition rate is higher on nanometer silicon dots than on a continuous silicon film. Key parameters to conveniently model nanodots deposition are good descriptions of the first chemisorption sites and of the H2 desorption process
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Fayolle, Francine. "Analyse et modélisation des dépots d'oxyde de silicium par procédé LPCVD." Toulouse, INPT, 1993. http://www.theses.fr/1993INPT029G.

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Le depot chimique a partir d'une phase vapeur (cvd) est le procede le plus utilise dans l'industrie micro-electronique pour realiser des couches minces, effectuees le plus souvent dans des reacteurs tubulaires a murs chauds. L'une des applications de la cvd est la fabrication de couches de silicium partiellement oxyde, et semi-isolantes (appele sipos), a partir d'un melange de silane et de protoxyde d'azote. La premiere partie de ce travail correspond a l'etude et l'etablissement d'un systeme chimique comportant deux phases (gazeuse et solide) et representatif du depot. Les constantes cinetiques correspondant aux reactions homogenes sont evaluees a partir de differentes methodes, en particulier la methode qrrk. La seconde partie comprend le developpement et l'utilisation de deux logiciels permettant de modeliser les ecoulements et le transfert de matiere dans un reacteur de depot de sipos en utilisant le systeme chimique decrit precedemment. Le premier logiciel, cvd2 modelise un espace interplaquette. Il a permis d'identifier les constantes de depot en phase heterogene. Le logiciel cwcvd a permis d'etudier la zone d'entree du reacteur. Les resultats de ces simulations sont compares avec des resultats experimentaux obtenus a l'usine motorola de toulouse. Ceux-ci sont detailles ainsi que les methodes d'analyse utilisees. Le bon accord obtenu entre la simulation et les experiences permet de valider les choix effectues au niveau du mecanisme chimique et d'avancer dans la comprehension des phenomenes mis en jeu lors du depot de sipos. Une derniere partie utilise la methode qrrk pour un autre type de depot d'oxyde, cette fois totalement isolant, a partir d'un melange d'oxygene et de silane (lto). Le type de reacteur de depot ne permettant pas l'utilisation directe des logiciels decrits precedemment, seule une premiere analyse du systeme chimique a pu etre effectuee
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Books on the topic "LPCVD"

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Habraken, F. H. P. M., ed. LPCVD Silicon Nitride and Oxynitride Films. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76593-3.

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Habraken, F. H. P. M., ed. LPCVD silicon nitride and oxynitride films: Material and applications in integrated circuit technology. Berlin: Springer-Verlag, 1991.

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LPCVD Silicon Nitride and Oxynitride Films: Material and Applications in Integrated Circuit Technology. Springer, 1991.

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Habraken, F. H. Lpcvd Silicon Nitride and Oxynitride Films: Materials and Applications in Integrated Circuit Technology (Lecture Notes in Computer Science). Springer, 1991.

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Book chapters on the topic "LPCVD"

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Habraken, F. H. P. M., J. B. Oude Elferink, W. M. Arnold Bik, W. F. van der Weg, A. E. T. Kuiper, J. Remmerie, H. E. Maes, M. Heyns, and R. F. de Keersmaecker. "Characterization of LPCVD Silicon Oxynitride Films." In LPCVD Silicon Nitride and Oxynitride Films, 1–28. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76593-3_1.

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Vergara-Irigaray, Nuria, Michèle Riesen, Gianluca Piazza, Lawrence F. Bronk, Wouter H. P. Driessen, Julianna K. Edwards, Wadih Arap, et al. "Low-Pressure Chemical Vapor Deposition (LPCVD)." In Encyclopedia of Nanotechnology, 1233. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100366.

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Heyns, M., J. Remmerie, E. Dooms, H. Maes, and R. De Keersmaecker. "Electrical Properties of LPCVD Silicon-Oxynitride Layers." In LPCVD Silicon Nitride and Oxynitride Films, 82–117. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76593-3_4.

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Rivière, J. C., and J. A. A. Crossley. "Silicon Oxynitride Films: Ion Bombardment Effects, Depth Profiles, and Ionic Polarisation, Studied with the Aid of the Auger Parameter." In LPCVD Silicon Nitride and Oxynitride Films, 29–49. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-76593-3_2.

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Kuiper, A. E. T., M. F. C. Willemsen, J. M. L. Mulder, J. B. Oude Elferink, R. Erens, F. H. P. M. Habraken, and W. F. van der Weg. "Oxidation of Low-Pressure-Chemical-Vapour Deposited Silicon Oxynitride Films." In LPCVD Silicon Nitride and Oxynitride Films, 50–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-76593-3_3.

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Habraken, F. H. P. M., M. Heyns, H. E. Maes, R. de Keersmaecker, A. E. T. Kuiper, and W. F. van der Weg. "On the Correlation between the Electrical and Physico Chemical Properties of LPCVD Silicon Oxynitride Films." In LPCVD Silicon Nitride and Oxynitride Films, 118–26. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76593-3_5.

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Maes, Herman E. "The use of oxynitride layers in non-volatile S-OxN-OS (silicon-oxynitride-oxide-silicon) memory devices." In LPCVD Silicon Nitride and Oxynitride Films, 127–46. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76593-3_6.

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Ledys, Jean-Luc. "LPCVD Silicon Oxynitrides for Locos Isolation in CMOS Technology." In LPCVD Silicon Nitride and Oxynitride Films, 147–59. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76593-3_7.

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Kersch, A., and M. Schäfer. "Modeling the Wafer Temperature in a LPCVD Furnace." In Simulation of Semiconductor Devices and Processes, 174–77. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_41.

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Haji, L., L. Hamedi, A. Rupert, B. Loisel, and P. Joubert. "Pressure Effect on In Situ Boron-Doped LPCVD Silicon Films." In Springer Proceedings in Physics, 387–91. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93413-1_53.

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Conference papers on the topic "LPCVD"

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McCann, Paul, Kumar Somasundram, Stephen Byrne, and Andrew Nevin. "Conformal deposition of LPCVD TEOS." In Micromachining and Microfabrication, edited by Jean Michel Karam and John A. Yasaitis. SPIE, 2001. http://dx.doi.org/10.1117/12.442963.

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Fan, L. S., and R. S. Muller. "As-deposited low-strain LPCVD polysilicon." In IEEE Technical Digest on Solid-State Sensor and Actuator Workshop. IEEE, 1988. http://dx.doi.org/10.1109/solsen.1988.26432.

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Sakiyama, Yukinori, Shu Takagi, and Yoichiro Matsumoto. "Multiscale Analysis of Silicon LPCVD Reactor." In ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72051.

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We demonstrate the multiscale analysis of the transport phenomena in a low pressure reactor. In this method, the macroscopic phenomena such as the temperature and the density distribution are related to the microscopic electronic structure of atom/molecule. By connecting the different scales with physical models, the macroscopic properties are obtained starting from the first principle calculation without any empirical parameters. Here, we take the silicon epitaxial growth from a gas mixture of silane and hydrogen as an example. As the first step of this method, we calculated the intermolecular potential energy of SiH4/H2 using the ab initio molecular orbital calculations. Then, an analytical pair potential model was constructed to reproduce the potential energy surface obtained from the ab initio calculation. We have confirmed the validation of the potential model by comparing the experimental data of the transport properties with the molecular dynamics simulation using the potential model. Subsequently, the binary molecular collision models were constructed by the classical trajectory calculation using the potential model as the second step of the multiscale analysis. The trajectory calculations were conducted for the various combinations of the initial translational and the rotational energy. Through the statistical analysis of the trajectory calculations, the elastic/inelastic collision cross section and the scattering angle model were constructed. Finally, the direct simulation Monte Carlo simulation of flow field in a low parssure reactor was executed. The thin film thickness distribution was also investigated and discussed. This method was extended to analyze the surface reaction, which is an ongoing research work and only the current progress is reported here.
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Parker, G. J. "LPCVD SiGe for heterojunction bipolar transistors." In IEE Colloquium on Advanced MOS and Bi-Polar Devices. IEE, 1995. http://dx.doi.org/10.1049/ic:19950178.

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Tai, Y. C., C. H. Mastrangelo, and R. S. Muller. "Thermal conductivity of heavily doped LPCVD polysilicon." In 1987 International Electron Devices Meeting. IRE, 1987. http://dx.doi.org/10.1109/iedm.1987.191409.

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Lee, Byoungdo, Weishen Chu, and Wei Li. "The Cooling Rate Effect on Graphene Synthesis Using Low Pressure Chemical Vapor Deposition." In ASME 2021 16th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/msec2021-64058.

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Abstract Low-pressure chemical vapor deposition (LPCVD) is the most efficient method to synthesize large-scale, high-quality graphene for many potential applications such as flexible electronics, solar cells, and separation membranes. The quality of LPCVD is affected by process variables including methane/hydrogen (CH4/H2) ratio, time, pressure, temperature, and cooling rate. The cooling rate has been recognized as one of the most important process variables affecting the amount of carbon source, nucleation, reaction time, and thus the quality of the LPCVD. In this research, we investigate the effect of cooling rate on the quality of graphene synthesize by changing the cooling rate and the gas feeding time. Graphene coverage is measured by Raman mapping. It is found that fast cooling rate leads to decreased carbon source reaction time, which in turn results in higher coverage by monolayer graphene. The temperature-dependent gas feeding time corresponding to different cooling rates can be used to properly supply the carbon source onto the copper surface, also leading to a higher graphene coverage.
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KASHKOOL, Imad N., and Valentin P. AFANASIEV. "EFFECT OF THE DEPOSITION TEMPERATURE ON THE OPTICAL PROPERTIES FOR ZNO:BTHIN FILMS OBTAINED BY (LPCVD)FOR SOLAR CELL." In III.International Scientific Congress of Pure,Appliedand Technological Sciences. Rimar Academy, 2021. http://dx.doi.org/10.47832/minarcongress3-4.

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We are studying the effect of the deposition temperature on the optical properties for ZnO:B thin films on glass substrates obtained bylow pressure chemical viper deposition (LPCVD), to develop layers with characteristics that best meet the requirements for use in solar cell.According to the depositiontemperaturein the range ( 185-195 ℃), we obtainedthat ,when (T=195℃),the optimum value of the Haze factor about 25.7% ,ZnO:B thin film thickness increased, which leads to decrease the value of sheet resistance,and the transmittance decreases ,so the optimum temperature in the range (90- 95℃). Key words: Zinc Oxide, LPCVD ,Solar Cell, Haze Factor.
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Morana, B., J. F. Creemer, F. Santagata, C. C. Fan, H. T. M. Pham, G. Pandraud, F. D. Tichelaar, and P. M. Sarro. "LPCVD amorphous SiCx for freestanding electron transparent windows." In 2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2010. http://dx.doi.org/10.1109/memsys.2010.5442439.

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Ristic, D., M. Ivanda, M. Marcius, V. Holy, Z. Siketic, I. Bogdanovic-Radovic, O. Gamulin, et al. "Characterisation of thin LPCVD silicon-rich oxide films." In SPIE Microtechnologies, edited by Ali Serpengüzel, Giancarlo C. Righini, and Alfred Leipertz. SPIE, 2011. http://dx.doi.org/10.1117/12.886783.

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Dai, Jian-Yang, Zai-Fa Zhou, Qing-An Huang, and Wei-Hua Li. "LPCVD process simulation based on Monte Carlo method." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667771.

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Reports on the topic "LPCVD"

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Nichols, Barbara M. Low-Pressure Chemical Vapor (LPCVD) Graphene Growth Study and Raman Characterization. Fort Belvoir, VA: Defense Technical Information Center, December 2013. http://dx.doi.org/10.21236/ada590053.

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