Academic literature on the topic 'Low Thermal Budget'
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Journal articles on the topic "Low Thermal Budget"
Sharangpani, R., K. C. Cherukuri, and R. Singh. "Low thermal budget processing of organic dielectrics." IEEE Transactions on Electron Devices 43, no. 7 (July 1996): 1168–70. http://dx.doi.org/10.1109/16.502430.
Full textPradeepkumar, Maurya Sandeep, Harsh Vardhan Singh, Sooraj Kumar, Joysurya Basu, and Md Imteyaz Ahmad. "Low thermal budget processing of CdS thin films." Materials Letters 280 (December 2020): 128560. http://dx.doi.org/10.1016/j.matlet.2020.128560.
Full textBhat, N., A. W. Wang, and K. C. Saraswat. "Rapid thermal anneal of gate oxides for low thermal budget TFT's." IEEE Transactions on Electron Devices 46, no. 1 (1999): 63–69. http://dx.doi.org/10.1109/16.737442.
Full textMichael, Aron, and Chee Yee Kwok. "Evaporated Thick Polysilicon Film With Low Stress and Low Thermal Budget." Journal of Microelectromechanical Systems 22, no. 4 (August 2013): 825–27. http://dx.doi.org/10.1109/jmems.2013.2248129.
Full textMazzamuto, Fulvio, Sebastien Halty, Hideaki Tanimura, and Yoshihiro Mori. "Low Thermal Budget Ohmic Contact Formation by Laser Anneal." Materials Science Forum 858 (May 2016): 565–68. http://dx.doi.org/10.4028/www.scientific.net/msf.858.565.
Full textKönig, U., and J. Hersener. "Needs of Low Thermal Budget Processing in SiGe Technology." Solid State Phenomena 47-48 (July 1995): 17–32. http://dx.doi.org/10.4028/www.scientific.net/ssp.47-48.17.
Full textKang, Il-Suk, Sung-Hun Yu, Hyun-Sang Seo, Jeong-Hun Kim, Jun-Mo Yang, Wook-Jung Hwang, and Chi Won Ahn. "Low Thermal Budget Crystallization of Amorphous Silicon by Nanoclusters." Electrochemical and Solid-State Letters 12, no. 9 (2009): H319. http://dx.doi.org/10.1149/1.3152594.
Full textAbbadie, A., J. M. Hartmann, P. Holliger, M. N. Séméria, P. Besson, and P. Gentile. "Low thermal budget surface preparation of Si and SiGe." Applied Surface Science 225, no. 1-4 (March 2004): 256–66. http://dx.doi.org/10.1016/j.apsusc.2003.10.018.
Full textSimon, Daniel K., Thomas Henke, Paul M. Jordan, Franz P. G. Fengler, Thomas Mikolajick, Johann W. Bartha, and Ingo Dirnstorfer. "Low-thermal budget flash light annealing for Al2O3surface passivation." physica status solidi (RRL) - Rapid Research Letters 9, no. 11 (October 16, 2015): 631–35. http://dx.doi.org/10.1002/pssr.201510306.
Full textNoh, Joo Hyon, Pooran C. Joshi, Teja Kuruganti, and Philip D. Rack. "Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors." IEEE Journal of the Electron Devices Society 3, no. 3 (May 2015): 297–301. http://dx.doi.org/10.1109/jeds.2014.2376411.
Full textDissertations / Theses on the topic "Low Thermal Budget"
Schiz, Frank Jochen Wilhelm. "The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors." Thesis, University of Southampton, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.287345.
Full textKrockert, Katja. "Development and characterization of a low thermal budget process for multi-crystalline silicon solar cells." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2016. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-192742.
Full textSaidi, Bilel. "Metal gate work function modulation mechanisms for 20-14 nm CMOS low thermal budget integration." Toulouse 3, 2014. http://www.theses.fr/2014TOU30300.
Full textTo continue CMOS scaling, the HfO2/metal gate stack replaced the historical SiO2/PolySi gate stack. But the uncontrolled interdiffusion and reactivities of the new gate materials integrated with the classical high thermal budget approach appear to be a roadblock to reach the effective work function (EWF) and equivalent oxide thickness (EOT) ITRS targets. One solution consisted in implementing an approach with a lower thermal budget. Using this new approach, the aim of this thesis work was to understand the physical mechanisms, which enable to reach an EOT<1nm and an EWF relevant for nMOS and pMOS co-integration as required for the next 20-14nm CMOS nodes. Using spatially resolved TEM/EDX analyses and macroscopic TOF-SIMS and XPS techniques, elemental distributions and chemical bonds across nanometric-sized stacks were discussed and, based on thermodynamic considerations, correlated with the measured EWF and EOT. We showed for the first time that the modulation of nitrogen during TiAlN deposition on HfO2 results in a ~0. 8eV EWF shift between the N-poor and N-rich HfO2/TiAlNx electrodes. The TiAlN complex system was understood after the identification of the EWF and EOT modulation mechanisms in the simple gate stacks TiN/Ti, Al or TiAl. Although TiAlNx electrodes define the best compromise for a variable EWF with a sub-nm EOT, it exhibits a low thermal stability. Therefore, we investigated two simpler metallic and stable systems using TaNix and NiTix alloys resulting from thermally assisted Ni-Ta and Ni-Ti interdiffusion in HfO2/Ta/Ni and HfO2/Ni/Ti stacks, respectively. These Ni-based electrodes are shown to be promising for a low thermal budget CMOS co-integration
Krockert, Katja [Verfasser], Hans-Joachim [Akademischer Betreuer] Möller, Hans-Joachim [Gutachter] Möller, and Gerhard [Gutachter] Gobsch. "Development and characterization of a low thermal budget process for multi-crystalline silicon solar cells : Development and characterization of a low thermal budget process for multi-crystalline silicon solar cells / Katja Krockert ; Gutachter: Hans-Joachim Möller, Gerhard Gobsch ; Betreuer: Hans-Joachim Möller." Freiberg : Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2016. http://d-nb.info/1220912336/34.
Full textGregory, Hayden J. "Low thermal budget issues for Si/Siâ†1â†-â†xGeâ†x heterojunction bipolar transistors and selective epitaxial Si bipolar transistors." Thesis, University of Southampton, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361660.
Full textBIETTI, SERGIO. "Nanostructured III-V epilayers on silicon substrate for optoelectronic applications." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2011. http://hdl.handle.net/10281/18979.
Full textChang, Chung-Yih, and 張忠義. "Low Temperature Electron Cyclotron Resonance Oxidation with Low Thermal Budget Annealing." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/64384961082973421703.
Full text國立交通大學
電子研究所
83
In this thesis,we successfully utilize the rapid thermal O2, N2, and N2O annealing technology to improve the quality of the ultra-low temperature (-20?C) electron cyclotron resonance (ECR) thin oxide. Among the three kinds of annealing technology, the N2O annealed oxide is found to have the better electrical characteristics due to the Si-N bonds in place of the weaker bonds at the Si/SiO2 interface. The breakdwon field( over 12.5 MV/cm), Dit (1.95e10cm-2eV-1) and leakage current are comparable to the furnace oxide. The material analyses, including the Fourier transform infrared spectrum analysis (FTIR), etch rate test, assure that the low thermal budget annealing indeed greatly improves the oxide quality. The relationship between the oxide thickness and growth time is well described by the Deal-Grove model. By way of the rapid thermal 40~O oxide, the characteristics of the ultra-thin oxide, such as the stress induced leakage current (SILC), quasi- breakdown phenomenon, the polarity dependence of the Qbd have been studied.
Harn, Shyh-Chyang, and 韓士強. "A Study of Shallow Junction Formation by Using Low Thermal Budget." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/78378584814180772272.
Full text國立臺灣科技大學
電子工程系
87
The scaling of CMOS devices to satisfy deep submicrometer technology requirements involves several process adjustments . One of the main challenges is the formation of shallow junction . Low-energy ion implantation , in tandem with low-thermal budget annealing processes , allows us to form shallower junctions . To adopt a low thermal budget scheme , we employed long-time low-temperature furnace annealing and rapid thermal annealing(RTA)as an approach of activating the implanted dopants without significant diffusion and eliminating the implanted-induced defects . Moreover , various low thermal budget schemes have been performed to form shallow junctions . The first scheme is the low temperature furnace annealing . The second scheme is the low temperature furnace annealing followed by RTA . The third scheme is the RTA followed by low temperature furnace annealing . The fourth scheme is the low temperature furnace annealing followed by high temperature furnace annealing . In this thesis , the dopant activation and the electrical characteristics of junctions have also been investigated .
Wang, Yu-Da, and 王裕達. "The fabrication and characterization of low-thermal-budget poly-Si TFTs." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/63928685294274586306.
Full textHuang, Tzu-En, and 黃子恩. "Visible and Far Infrared Laser Annealing-enabled Low Thermal Budget Ge Transistor." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/248766.
Full textBooks on the topic "Low Thermal Budget"
Clarke, Andrew. Energy flow in organisms. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780199551668.003.0004.
Full textBook chapters on the topic "Low Thermal Budget"
Fair, Richard B. "Oxidation-Induced Defects and Effects in Silicon During Low Thermal-Budget Processing." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, 459–68. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_51.
Full textCaymax, Matty R., and W. Y. Leong. "Low Thermal Budget Chemical Vapour Deposition Techniques for Si and SiGe." In Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices, 141–83. CRC Press, 2021. http://dx.doi.org/10.1201/9781003208860-5.
Full textHaigh, Joanna D., and Peter Cargill. "The Earth’s Climate System." In The Sun's Influence on Climate. Princeton University Press, 2015. http://dx.doi.org/10.23943/princeton/9780691153834.003.0002.
Full textRango, Albert, and Jerry Ritchie. "Applications of Remotely Sensed Data from the Jornada Basin." In Structure and Function of a Chihuahuan Desert Ecosystem. Oxford University Press, 2006. http://dx.doi.org/10.1093/oso/9780195117769.003.0019.
Full textOswood, Mark W., and Nicholas F. Hughes. "Running Waters of the Alaskan Boreal Forest." In Alaska's Changing Boreal Forest. Oxford University Press, 2006. http://dx.doi.org/10.1093/oso/9780195154313.003.0015.
Full textConference papers on the topic "Low Thermal Budget"
Bourdon, H., A. Halimaoui, A. Talbot, J. Venturini, O. Marcelot, and D. Dutartre. "Low Thermal Budget Activation of B in Si." In 2006 14th International Conference on Advanced Thermal Processing of Semiconductors. IEEE, 2006. http://dx.doi.org/10.1109/rtp.2006.368001.
Full textSedky, S., H. Tawfik, A. Abdel Aziz, S. ElSaegh, A. B. Graham, J. Provine, and R. T. Howe. "Low thermal-budget silicon sealed-cavity microencapsulation process." In 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2011. http://dx.doi.org/10.1109/memsys.2011.5734415.
Full textBurghartz, Grutzmacher, Sedgwick, Jenkins, Megdanis, Cotte, Nguyen-Ngoc, and Iyer. "An Ultra-low Thermal-budget SiGe-base Bipolar Technology." In Symposium on VLSI Technology. IEEE, 1993. http://dx.doi.org/10.1109/vlsit.1993.760244.
Full textSealy, B. J., A. J. Smith, T. Alzanki, N. Bennett, L. Li, C. Jeynes, B. Colombeau, et al. "Shallow junctions in silicon via low thermal budget processing." In 2006 International Workshop on Junction Technology. IEEE, 2006. http://dx.doi.org/10.1109/iwjt.2006.220850.
Full textYonah Cho, Yoshitaka Yokota, Chris Olsen, Agus Tjandra, Kai Ma, and Vicky Nguyen. "Quality and reliability of oxide by low thermal budget rapid thermal oxidation." In 2008 16th International Conference on Advanced Thermal Processing of Semiconductors (RTP). IEEE, 2008. http://dx.doi.org/10.1109/rtp.2008.4690559.
Full textLlU, G., and S. J. FONASH. "Low Thermal Budget Poly-Si Thin Film Transistors on Glass." In 1990 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1990. http://dx.doi.org/10.7567/ssdm.1990.s-e-7.
Full textHuet, K., I. Toque-Tresonne, F. Mazzamuto, T. Emeraud, and H. Besaucele. "Laser Thermal Annealing: A low thermal budget solution for advanced structures and new materials." In 2014 14th International Workshop on Junction Technology (IWJT). IEEE, 2014. http://dx.doi.org/10.1109/iwjt.2014.6842020.
Full textLuo, Guo-Lun, Yuri Kusano, and David Horsley. "Immersion PMUTs Fabricated with a Low Thermal-Budget Surface Micromachining Process." In 2018 IEEE International Ultrasonics Symposium (IUS). IEEE, 2018. http://dx.doi.org/10.1109/ultsym.2018.8579826.
Full textHuet, K., C. Boniface, R. Negru, and J. Venturini. "Ultra low thermal budget anneals for 3D memories: Access device formation." In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIP, 2012. http://dx.doi.org/10.1063/1.4766508.
Full textShie, Kai-Cheng, Pin-Syuan He, Yu-Hao Kuo, Jia Juen Ong, K. N. Tu, Benson Tzu-Hung Lin, Chia-Cheng Chang, and Chih Chen. "Hybrid Bonding of Nanotwinned Copper/organic Dielectrics with Low Thermal Budget." In 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). IEEE, 2021. http://dx.doi.org/10.1109/ectc32696.2021.00079.
Full textReports on the topic "Low Thermal Budget"
Yue Kuo. A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION. Office of Scientific and Technical Information (OSTI), August 2010. http://dx.doi.org/10.2172/992272.
Full textLever, James, and Jason Weale. High efficiency fuel sleds for Polar traverses. Engineer Research and Development Center (U.S.), March 2022. http://dx.doi.org/10.21079/11681/43445.
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