Relevant bibliographies by topics / Low pressure chemical vapour deposition

Academic literature on the topic 'Low pressure chemical vapour deposition'

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Published: 4 June 2021
Last updated: 29 January 2023

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Journal articles on the topic "Low pressure chemical vapour deposition"

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Henry, F., B. Armas, R. Berjoan, C. Combescure, and C. Dupuy. "Low pressure chemical vapour deposition of AlN-Si3N4 codeposits." Journal of the European Ceramic Society 17, no. 15-16 (January 1997): 1803–6. http://dx.doi.org/10.1016/s0955-2219(97)00072-1.

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Kostana, M., J. Jang, and S. M. Pietruszko. "Stability of low pressure chemical vapour deposition amorphous silicon." Thin Solid Films 337, no. 1-2 (January 1999): 78–81. http://dx.doi.org/10.1016/s0040-6090(98)01389-3.

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Manfredotti, C. "Amorphous silicon prepared by low pressure chemical vapour deposition." Thin Solid Films 141, no. 2 (August 1986): 171–78. http://dx.doi.org/10.1016/0040-6090(86)90344-5.

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Kumar, A., Pankaj Agarwal, Sachin Kumar, and B. Joshi. "Low-pressure Chemical Vapour Deposition of Silicon Nanoparticles:Synthesis and Characterisation." Defence Science Journal 58, no. 4 (July 25, 2008): 550–58. http://dx.doi.org/10.14429/dsj.58.1676.

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Habib, Sami S. "Growth of carbon nanotubes using low pressure chemical vapour deposition." International Journal of Nanoparticles 2, no. 1/2/3/4/5/6 (2009): 46. http://dx.doi.org/10.1504/ijnp.2009.028733.

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Pastor, G., P. Tejedor, I. Jiménez, E. Domínguez, M. Torres, and J. V. García-Ramos. "Low pressure chemical vapour deposition amorphous silicon behaviour under annealing." Physica Status Solidi (a) 106, no. 1 (March 16, 1988): 11–16. http://dx.doi.org/10.1002/pssa.2211060102.

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Burte, E. P., and N. Rausch. "Low pressure chemical vapour deposition of tantalum pentoxide thin layers." Journal of Non-Crystalline Solids 187 (July 1995): 425–29. http://dx.doi.org/10.1016/0022-3093(95)00219-7.

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Wang, B. B., K. Zhu, J. Feng, J. Y. Wu, R. W. Shao, K. Zheng, and Q. J. Cheng. "Low-pressure thermal chemical vapour deposition of molybdenum oxide nanorods." Journal of Alloys and Compounds 661 (March 2016): 66–71. http://dx.doi.org/10.1016/j.jallcom.2015.11.179.

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Jašek, Ondřej, Petr Synek, Lenka Zajíčková, Marek Eliáš, and Vít Kudrle. "Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric Pressure." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 311–13. http://dx.doi.org/10.2478/v10187-011-0049-9.

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Synthesis of Carbon Nanostructures by Plasma Enhanced Chemical Vapour Deposition at Atmospheric PressureCarbon nanostructures present the leading field in nanotechnology research. A wide range of chemical and physical methods was used for carbon nanostructures synthesis including arc discharges, laser ablation and chemical vapour deposition. Plasma enhanced chemical vapour deposition (PECVD) with its application in modern microelectronics industry became soon target of research in carbon nanostructures synthesis. Selection of the ideal growth process depends on the application. Most of PECVD techniques work at low pressure requiring vacuum systems. However for industrial applications it would be desirable to work at atmospheric pressure. In this article carbon nanostructures synthesis by plasma discharges working at atmospheric pressure will be reviewed.
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Mahfoz-Kotb, H., A. C. Salaün, T. Mohammed-Brahim, F. Bendriaa, F. Le Bihan, and O. Bonnaud. "Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems." Solid State Phenomena 93 (June 2003): 453–58. http://dx.doi.org/10.4028/www.scientific.net/ssp.93.453.

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Dissertations / Theses on the topic "Low pressure chemical vapour deposition"

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Ahmed, W. "Studies in low pressure chemical vapour deposition of polycrystalline silicon." Thesis, University of Salford, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376853.

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Trainor, Michael. "Studies of low pressure chemical vapour deposition (LPCVD) of polysilicon." Thesis, University of Strathclyde, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291988.

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Freeman, Mathieu Jon. "Synthesizing diamond films from low pressure chemical vapor deposition /." Online version of thesis, 1990. http://hdl.handle.net/1850/11262.

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Dyson, Glynn. "The low-temperature chemical vapour deposition of tungsten carbide coatings utilising the pyrolysis of tungsten hexacarbonyl." Thesis, Loughborough University, 1998. https://dspace.lboro.ac.uk/2134/33243.

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A detailed study has been made of the atmospheric pressure chemical vapour deposition (CVD) of tungsten carbide coatings onto powder metallurgy (PM) BT42 grade high speed steel (HSS) indexable cutting tool inserts. The pyrolysis of tungsten hexacarbonyl (W(CO)6) deposition route was utilised in conjunction with a laboratory-scale hot-wall CVD reactor. After numerous coating runs, deposition conditions were established under which rudimentary tungsten carbide coatings could be deposited at 350°C. The characteristics of these coatings were determined using an established characterisation procedure. This involved the following techniques: X-ray diffraction, ball cratering, Auger electron spectroscopy (AES), optical microscopy, fractography/scanning electron microscopy (SEM), profilometry, scratch adhesion testing and micro-indentation hardness testing.
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Petersburg, Cole. "Low pressure chemical vapor deposition of a-Si:H from disilane." [Ames, Iowa : Iowa State University], 2007.

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Berlin, Dean Edward 1978. "Fabricating silicon germanium waveguides by low pressure chemical vapor deposition." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8427.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.
Includes bibliographical references (p. 110-112).
Low loss optical waveguide structures combining the high bandwidth of light transmission and the economics of silicon substrates have been made possible by Low Pressure Chemical Vapor Deposition (LPCVD). This work explores the fabrication, modeling, and testing of LPCVD Si Ge waveguides. Thesis research was conducted during a six-month internship at Applied Materials, a semiconductor equipment manufacturing company. The present work can be divided into two parts: developmental work on the Applied Materials' Epi Centura® LPCVD reactor and use of this reactor to fabricate optical waveguides. Development was performed on the reactor to improve its performance for the deposition of epitaxial SiGe films in several essential aspects. The wafer heating and flow uniformity was given greater flexibility by employing a 3-zone heating lamp module, AccuSETT® flow controllers, and flow baffles. 1 [sigma]58% was achieved for thickness uniformity. The incorporation of an in-line purifier in the GeH.t supply line was found to reduce the oxygen concentration below the SIMS detection limit. Process conditions were identified for seleclive silicon epitaxial growth on silicon surfaces and not on oxide surfaces. Atomic force microscopy was used to characterize the surface roughness of polycrystalline SiGe films deposited-on nitride and oxide layers. The effect of C incorporation on the suppression of B diffusion was confirmed using this reactor. The addition of C to the SiGe lattice was shown to nullify the strain associated with epitaxial deposition on Si. Using the optimized reactor, optical waveguides were fabricated to determine the optimum processing conditions to produce low transmission loss structures. XRD scans on these samples confirm that low Ge concentration and relaxed structures were fabricated. Attenuation measurements in straight waveguide sections confirm that low loss transmission is achievable. The basic equations of optical transmission in planar waveguides are presented and solved for square cross-section strip SiGe waveguide design. The Marcatili method was used to model the electric field mode profiles in the waveguide core and cladding. Curved structures were designed to explore the crosstalking and coupling effects between adjacent waveguides.
by Dean Edward Berlin.
S.M.
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Mihai-Dilliway, Gabriela Delia. "Structural characterisation of silicon-germanium virtual substrate-based heterostructures grown by low pressure chemical vapour deposition." Thesis, University of Southampton, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.396117.

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Omar, Omar. "Large scale growth of MoS2 monolayers by low pressure chemical vapor deposition." Thesis, University of York, 2018. http://etheses.whiterose.ac.uk/20406/.

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Monolayers of molybdenum disulphide MoS2, a two dimensional (2D) semiconductor with a direct band gap of 1.9 eV, have been proposed as a candidate for next generation nanoscale electronic and opto-electronic devices. Controlled synthesis of MoS2 monolayers is critically important since the thickness uniformity and grain size are major concerns for the fabrication of opto-electronic devices. In this study, we demonstrated the growth of wafer scale uniform MoS2 monolayers on SiO2 covered silicon wafers, at a range of growth temperatures (650 oC-850 oC) with optimum grain sizes as large as 400 μm, using low pressure chemical vapor deposition (LPCVD). By controlling the partial pressure of the reactant species at the growth surface and the limiting time, we can achieve prefered monolayer growth over multilayer growth. The MoS2 monolayer crystals follow a lognormal size distribution, consistent with random crystal nucleation, with single crystal domains as large as 400 μm. We estimated the thermal expansion coefficient to be (2.5±1.2) ×10-6 /oC, which is at least double that of the bulk. We have found film growth can be clearly classified into the reaction limited, feed limited and desorption limited regimes. With the help of COMSOL simulations, we have related the local growth environment such as growth temperature, MoO2 concentration, sulphur chemical potential and growth time with the macroscopic growth parameters such as Ar flux. In the feed limited regions, it is the supply of Mo that is the rate limiting factor. In the desorption regions, the growth is controlled by thermal stability of MoS2 monolayers. The growth modes also can be used to tune the grain morphology from perfect triangles to hexagons. Finally, we have also compared our approach with an LPCVD approach based on MoO3 as the Mo source. MoO3 has a higher vapor pressure than MoO2 which was used in the previous approach. By tuning the the S:MoO3 ratio, we could grow controllably planar MoS2 monolayers, vertically aligned MoS2/MoO2 and planar MoO2 crystals.
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Fang, Wenjing Ph D. Massachusetts Institute of Technology. "Bilayer graphene growth by low pressure chemical vapor deposition on copper foil." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/75656.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 49-51).
Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films were successfully grown. Furthermore, the quality of the bilayer was confirmed using Raman spectroscopy. Finally, we consider future studies that may reveal the underlying mechanisms behind bilayer growth.
by Wenjing Fang.
S.M.
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Rafique, Subrina. "Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga2O3 by Low Pressure Chemical Vapor Deposition." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762.

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Books on the topic "Low pressure chemical vapour deposition"

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Ahmed, Waqar. Studies in low pressure chemical vapour deposition of polycrystalline silicon. Salford: University of Salford, 1986.

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Pritchard, Hywyn. The production of thin tungsten films by low pressure chemical vapour deposition. Salford: University of Salford, 1988.

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Sutcliffe, P. J. SIMS surface studies of silicon substrates for low temperature chemical vapour deposition. Manchester: UMIST, 1992.

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McLean, Steven. Chemical vapour deposition of titanium carbide on low alloy high speed steel. Birmingham: University of Birmingham, 1987.

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Priestner, Deborah Mary. An investigation of the chemical vapour deposition of titanium carbide onto pre-carburised low carbon, low alloy steel substrates. Birmingham: University of Birmingham, 1989.

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Court, D. G. The deposition and characterisation of atmospheric pressure chemical vapour deposited silicate glass films: A dissertation in partial fulfilment of the requirement for the degree of Master of Science of the Council for National Academic Awards. London: Middlesex Polytechnic, 1988.

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Low-pressure synthetic diamond: Manufacturing and applications. Berlin: Springer, 1998.

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Dyson, Glynn. The low temperature chemical vapour deposition of tungsten carbide coatings utilising the pyrolysis of tungsten hexacarbonyl. 1998.

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Book chapters on the topic "Low pressure chemical vapour deposition"

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Zhao, Hongping. "Low Pressure Chemical Vapor Deposition." In Gallium Oxide, 293–306. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37153-1_16.

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Vergara-Irigaray, Nuria, Michèle Riesen, Gianluca Piazza, Lawrence F. Bronk, Wouter H. P. Driessen, Julianna K. Edwards, Wadih Arap, et al. "Low-Pressure Chemical Vapor Deposition (LPCVD)." In Encyclopedia of Nanotechnology, 1233. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100366.

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Khan, Sunny, Javid Ali, Harsh, M. Husain, and M. Zulfequar. "Synthesis of Graphene by Low Pressure Chemical Vapor Deposition (LPCVD) Method." In Springer Proceedings in Physics, 119–23. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-29096-6_15.

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Zawadzki, P., G. S. Tompa, P. Norris, D. W. Noh, B. Gallois, C. Chern, R. Caracciolo, and B. Kear. "Low-pressure Metalorganic Chemical Vapor Deposition and Characterization of YBa2Cu3O7−x Thin Films." In Superconductivity and Applications, 127–38. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-7565-4_11.

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Razeghi, Manijeh, Philippe Maurel, and Franck Omnes. "Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition." In Properties of Impurity States in Superlattice Semiconductors, 43–61. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4684-5553-3_5.

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Fu, Xiao An, Jacob Trevino, M. Mehregany, and Christian A. Zorman. "Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition." In Silicon Carbide and Related Materials 2005, 311–14. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.311.

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Ali, Javid, Avshish Kumar, Samina Husain, Shama Parveen, Sunny Khan, Harsh, and M. Husain. "Field-Emission Study of Carbon Nanotubes Grown by Low Pressure Chemical Vapour Deposition on Single and Dual Layer of Catalyst." In Physics of Semiconductor Devices, 527–29. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_132.

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Schmidt, Howard K., J. Albert Schultz, and Zirao Zheng. "A New Probe for In-Situ Characterization of Diamond Surfaces During Low Pressure Chemical Vapor Deposition." In Diamond and Diamond-like Films and Coatings, 669–76. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-5967-8_45.

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Sun, Guo Sheng, Jin Ning, Quan Cheng Gong, Xin Gao, Lei Wang, Xing Fang Liu, Yi Ping Zeng, and Jin Min Li. "Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition." In Silicon Carbide and Related Materials 2005, 191–94. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.191.

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Şovar, Maria Magdalena, Diane Samélor, Alain Gleizes, P. Alphonse, S. Perisanu, and Constantin Vahlas. "Protective Alumina Coatings by Low Temperature Metalorganic Chemical Vapour Deposition." In Materials and Technologies, 245–48. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-460-x.245.

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Conference papers on the topic "Low pressure chemical vapour deposition"

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Sharma, K. K., and Claudio Manfredotti. "Photostable amorphous-silicon films by low-pressure chemical vapour deposition." In Madras - DL tentative. SPIE, 1992. http://dx.doi.org/10.1117/12.56990.

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Houf, William G., and J. F. Grcar. "Chemical Vapor Deposition in Low Pressure Batch Furnaces." In International Heat Transfer Conference 10. Connecticut: Begellhouse, 1994. http://dx.doi.org/10.1615/ihtc10.130.

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Busnaina, Ahmed A., and Bruce S. MacGibbon. "Modeling of Particulate Contamination in Tungsten Low Pressure Chemical Vapor Deposition." In ASME 1996 Design Engineering Technical Conferences and Computers in Engineering Conference. American Society of Mechanical Engineers, 1996. http://dx.doi.org/10.1115/96-detc/cie-1351.

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Abstract Chemical vapor deposition processes are one of the most used techniques for depositing thin films in the semiconductor-microelectronics and opto-electronic industries. Particulate contamination of the substrate during these CVD processes can be detrimental to the product yield. Due to the temperature gradients present in the CVD reactor, thermophoresis has a direct impact on the amount of particulate deposition on the substrate. The thermophoretic force is the force that arises from asymmetrical interactions of a particle with the surrounding gas molecules due to a temperature gradient. CVD processes can take place in hot and cold wall reactors, with varying substrate temperatures. This array of thermal boundary conditions results in a variety of temperature gradients and thermophoretic forces on the particle. There are other forces also acting on the particles in the CVD environment such as the Brownian force, drag, and gravity. The effect of thermophoresis on the particle transport and deposition in the reactor is examined. Different particle concentrations and sizes is considered in the reactor. The motion of these particles according to the thermal gradients in the reactor is examined. The behavior of these particles under different thermal conditions is studied.
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Rogers, Donald Z. "Manufacture Of Optical Interference Coatings By Low Pressure Chemical Vapor Deposition." In 33rd Annual Techincal Symposium, edited by Robert E. Fischer, Harvey M. Pollicove, and Warren J. Smith. SPIE, 1989. http://dx.doi.org/10.1117/12.962966.

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Lei, Wen, Maojun Wang, Xinnan Lin, Meihua Liu, Jiansheng Luo, and Yufeng Jin. "Growth Optimization of Low-Pressure Chemical Vapor Deposition Silicon Nitride Film." In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2021. http://dx.doi.org/10.1109/edtm50988.2021.9420839.

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MIYASAKA, Mitsutoshi, Takashi NAKAZAWA, Ichio YUDASAKA, and Hiroyuki OHSHIMA. "TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.pc5-5.

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Calnan, S., C. David, A. Neumann, N. Papathanasiou, R. Schlatmann, and B. Rech. "Modification of light scattering properties of boron doped zinc oxide grown by Low Pressure Chemical Vapour Deposition using wet chemical etching." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614451.

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Hartmann, J. M., V. Benevent, and C. Deguet. "Very Low Temperature Reduced Pressure - Chemical Vapour Deposition of SiGe, Si1-yCy and Si:P Layers: Silane versus Disilane." In 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2012. http://dx.doi.org/10.1109/istdm.2012.6222426.

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Chang, N. H., and C. J. Spanos. "Continuous diagnosis of low-pressure chemical vapor deposition reactors using evidence integration." In Digest of Technical Papers.1990 Symposium on VLSI Technology. IEEE, 1990. http://dx.doi.org/10.1109/vlsit.1990.111028.

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Rogers, Donald Z., and Ric P. Shimshock. "Low-pressure chemical vapor deposition of emissivity modification coatings on complex shapes." In Orlando '90, 16-20 April, edited by Rudolf Hartmann, M. J. Soileau, and Vijay K. Varadan. SPIE, 1990. http://dx.doi.org/10.1117/12.21702.

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Reports on the topic "Low pressure chemical vapour deposition"

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Baron, B., R. Rocheleau, and S. Hegedus. Low-pressure chemical vapor deposition of amorphous silicon photovoltaic devices. Annual technical progress report, 1 May 1984-30 April 1985. Office of Scientific and Technical Information (OSTI), February 1986. http://dx.doi.org/10.2172/5965186.

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Kingston, A. W., and O. H. Ardakani. Diagenetic fluid flow and hydrocarbon migration in the Montney Formation, British Columbia: fluid inclusion and stable isotope evidence. Natural Resources Canada/CMSS/Information Management, 2022. http://dx.doi.org/10.4095/330947.

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The Montney Formation in Alberta and British Columbia, Canada is an early Triassic siltstone currently in an active diagenetic environment at depths greater than 1,000 m, but with maximum burial depths potentially exceeding 5,000 m (Ness, 2001). It has undergone multiple phases of burial and uplift and there is strong evidence for multiple generations of hydrocarbon maturation/migration. Understanding the origin and history of diagenetic fluids within these systems helps to unravel the chemical changes that have occurred since deposition. Many cores taken near the deformation front display abundant calcite-filled fractures including vertical or sub-vertical, bedding plane parallel (beefs), and brecciated horizons with complex mixtures of vertical and horizontal components. We analyzed vertical and brecciated horizons to assess the timing and origin of fluid flow and its implications for diagenetic history of the Montney Fm. Aqueous and petroleum bearing fluid inclusions were observed in both vertical and brecciated zones; however, they did not occur in the same fluid inclusion assemblages. Petroleum inclusions occur as secondary fluid inclusions (e.g. in healed fractures and along cleavage planes) alongside primary aqueous inclusions indicating petroleum inclusions post-date aqueous inclusions and suggest multiple phases of fluid flow is recorded within these fractures. Raman spectroscopy of aqueous inclusions also display no evidence of petroleum compounds supporting the absence or low abundance of petroleum fluids during the formation of aqueous fluid inclusions. Pressure-corrected trapping temperatures (>140°C) are likely associated with the period of maximum burial during the Laramide orogeny based on burial history modelling. Ice melt temperatures of aqueous fluid inclusions are consistent with 19% NaCl equiv. brine and eutectic temperatures (-51°C) indicate NaCl-CaCl2 composition. Combined use of aqueous and petroleum fluid inclusions in deeply buried sedimentary systems offers a promising tool for better understanding the diagenetic fluid history and helps constrain the pressure-temperature history important for characterizing economically important geologic formations.
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