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Journal articles on the topic 'Low noise amplifier'

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Author: Grafiati

Published: 4 June 2021

Last updated: 14 September 2024

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1

Ali, Ghulam, and Faisal Mohd-Yasin. "Comprehensive Noise Modeling of Piezoelectric Charge Accelerometer with Signal Conditioning Circuit." Micromachines 15, no. 2 (February 17, 2024): 283. http://dx.doi.org/10.3390/mi15020283.

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This paper reports on noise modeling of a piezoelectric charge accelerometer with a signal conditioning circuit. The charge output is converted into voltage and amplified using a JFET operational amplifier that has high input resistance and low noise. The noise sources in the whole system include electrical and mechanical thermal noises of the accelerometer, thermal noises of resistors, and voltage and current noises of the operational amplifier. Noise gain of each source is derived from small signal circuit analysis. It is found that the feedback resistor of the operational amplifier is a major source of noise in low frequencies, whereas electrical thermal noise of the accelerometer dominates the rest of spectrum. This method can be used to pair a highly sensitive sensor with a single JFET operational amplifier instead of a multi-stage signal conditioning circuit.

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2

Cai, Dexi. "Systematic analysis of the principles and application scenarios of Low-Noise Amplifier." Applied and Computational Engineering 48, no. 1 (March 19, 2024): 106–13. http://dx.doi.org/10.54254/2755-2721/48/20241211.

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As society advances, new ideas and products are increasingly integrated into our daily lives. 5th generation mobile networks tech enables faster, lag-free connectivity, raising performance standards for components like Low-Noise Amplifiers. Summarizing Low-Noise Amplifier tech and applications helps researchers and firms leverage past knowledge and explore innovations. This paper analyzes Low-Noise Amplifier development and application, discussing types, principles, key performance indicators, and circuit structures of basic amplifiers. Five vital Low-Noise Amplifier characteristicsnoise figure, impedance matching, linearity, stability, and gainare examined. The author introduces design and application cases in radio astronomy, navigation systems, and 5th generation mobile networks communications based on Low-Noise Amplifier characteristics and performance requirements. The author concludes that advancing radio frequency tech requires improved Low-Noise Amplifiers, especially for high-frequency signals in 5th generation mobile networks. Promising noise performance enhancements come from technologies like modified high electron mobility transistors on GaAs and InP substrates. Monolithic Microwave Integrated Circuit integration reduces size while maintaining cost-effective performance. Future advancements in these areas could further boost Low-Noise Amplifier performance.

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3

Deepika, G., and K. S. Rao. "A Low Power, Low Noise Amplifier for Recording Neural Signals." IAES International Journal of Artificial Intelligence (IJ-AI) 6, no. 1 (March 1, 2017): 18. http://dx.doi.org/10.11591/ijai.v6.i1.pp18-25.

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The design of a low power amplifier for recording EEG signals is presented. The low noise design techniques are used in this design to achieve low input referred noise that is near the theoretical limit of any amplifier using a differential pair as input stage. To record the neural spikes or local field potentials (LFP’s) the amplifier’s bandwidth can be adjusted. In order to reject common-mode and power supply noise differential input pair need to be included in the design. The amplifier achieved a gain of 53.7dB with a band width of 0.5Hz to1.1 kHz and input referred noise measured as 357 nV<sub>rms </sub>operated with a supply voltage of 1.0V. The total power consumed is around 3.19µW. When configured to record neural signals the gain measured is 54.3 dB for a bandwidth of 100 Hz and the input referred noise is 1.04µ V<sub>rms</sub>. The amplifier was implemented in 180nm technology and simulated using Cadence Virtuoso.

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4

Lee, Tze Kiu, Wing Shing Chan, and T. Y. M. Siu. "Power amplifier/low noise amplifier RF switch." Electronics Letters 36, no. 24 (2000): 1983. http://dx.doi.org/10.1049/el:20001404.

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5

Seo, Heesong, Hyejeong Song, Changjoon Park, Jehyung Yoon, Inyoung Choi, and Bumman Kim. "Blocker filtering low-noise amplifier for SAW-less Bluetooth receiver system." International Journal of Microwave and Wireless Technologies 1, no. 5 (October 2009): 447–52. http://dx.doi.org/10.1017/s1759078709990699.

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A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth™ application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from each path, the large interferers are rejected and only the wanted signal is amplified. Therefore, it becomes a narrow-band amplifier with blocker filtering capability, realizing a receiver system without need of the off-chip SAW filter. The BF-LNA is designed using a 0.13-μm CMOS process. The measured performances are a gain of 11.4 dB, and a noise figure of 1.85 dB. Attenuation levels at 400 MHz apart from the target frequency are −13 and −29 dBc at each sideband. The P1dB,in and IIP3 are −8.2 and 1.46 dBm, respectively. The proposed BF-LNA can reject large interferers at the front-end of the receiver system with a good noise figure.

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6

Memioglu, O., O. Kazan, A. Karakuzulu, I. Turan, A. Gundel, F. Kocer, and O. A. Civi. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (February 24, 2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.

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7

Achtenberg, Krzysztof, Graziella Scandurra, Janusz Mikołajczyk, Carmine Ciofi, and Zbigniew Bielecki. "Transimpedance Amplifier for Noise Measurements in Low-Resistance IR Photodetectors." Applied Sciences 13, no. 17 (September 4, 2023): 9964. http://dx.doi.org/10.3390/app13179964.

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This paper presents the design and testing of an ultra-low-noise transimpedance amplifier (TIA) for low-frequency noise measurements on low-impedance (below 1 kΩ) devices, such as advanced IR photodetectors. When dealing with low-impedance devices, the main source of background noise in transimpedance amplifiers comes from the equivalent input voltage noise of the operational amplifier, which is used in a shunt–shunt configuration to obtain a transimpedance stage. In our design, we employ a hybrid operational amplifier in which an input front end based on ultra-low-noise discrete JFET devices is used to minimize this noise contribution. When using IF3602 JFETs for the input stage, the equivalent voltage noise of the hybrid operational amplifier can be as low as 4 nV/√Hz, 2 nV/√Hz, and 0.9 nV/√Hz at 1 Hz, 10 Hz, and 1 kHz, respectively. When testing the current noise of an ideal 1 kΩ resistor, these values correspond to a current noise contribution of the same order as or below that of the thermal noise of the resistor. Therefore, in cases in which the current flicker noise is dominant, i.e., much higher than the thermal noise, the noise contribution from the transimpedance amplifier can be neglected in most cases of interest. Test measurements on advanced low-impedance photodetectors are also reported to demonstrate the effectiveness of our proposed approach for directly measuring low-frequency current noise in biased low-impedance electronic devices.

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8

Krause, C., D. Drung, M. Götz, and H. Scherer. "Noise-optimized ultrastable low-noise current amplifier." Review of Scientific Instruments 90, no. 1 (January 2019): 014706. http://dx.doi.org/10.1063/1.5078572.

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9

Muhamad, Maizan, Norhayati Soin, and Harikrishnan Ramiah. "Design of Low Power Low Noise Amplifier using Gm-boosted Technique." Indonesian Journal of Electrical Engineering and Computer Science 9, no. 3 (March 1, 2018): 685. http://dx.doi.org/10.11591/ijeecs.v9.i3.pp685-689.

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This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.

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10

Ren, Ming Yuan, Li Tian, Wei Wang, Xiao Wei Liu, and Zhi Gang Mao. "Design of Pre-Amplifiers for Photoelectric Detector." Applied Mechanics and Materials 380-384 (August 2013): 3308–11. http://dx.doi.org/10.4028/www.scientific.net/amm.380-384.3308.

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This paper presents the design of low noise CMOS pre-amplifiers based on photoelectric detection systems, which can directly affect the detecting precision of the whole systems. The design of pre-amplifier circuit from photoelectric detector was introduced. The photoelectric conversion circuit, amplifier circuit bandwidth, amplifier circuit noise, amplifier circuit stabilization and other questions were mainly discussed, and an amplifier circuit capable of effectively decreasing the noise, the temperature drift and a large dynamic range was designed. This paper analyzes the sources of photoelectric detection circuit internal noise, and gives the formulas of internal noise, designs a variable equivalent load photoelectric conversion circuit, and is verified by experiments. Then the result is used to reduce the noise of CMOS based operational amplifiers and finally implement the design work of pre-amp using 0.5μm CMOS Technology.

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11

YASUDA, YOHEI, and NOBUHIKO NAKANO. "Multichannel Low‐Noise Low‐Power Amplifier for Neural Signal Acquisition." Electronics and Communications in Japan 99, no. 5 (April 14, 2016): 62–73. http://dx.doi.org/10.1002/ecj.11816.

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SUMMARYThis paper describes a low‐noise and low‐power spike neural signal amplifier design that has cut‐off frequency compensation between channels and chips. The variation of the frequency characteristics of amplifiers should be minimized among the channels and chips. This is a requirement to perform statistical correlation analysis from a neuroscience‐oriented point of view. Our design includes an adjustable cut‐off frequency using a 4‐bit variable capacitance. After compensation, the variation of the cut‐off frequency was reduced to between –0.4 kHz and +0.3 kHz from between –1.1 kHz and +3.6 kHz; that is, the value before trimming under the condition of a target cut‐off frequency of 10 kHz. We designed a multineural signal amplifier using the Rohm 0.18 m CMOS process. The designed neural amplifier has capacitive coupled differential input to reject large dc offsets generated at the electrode–tissue interface and to avoid strong common mode noise. To achieve high energy efficiency with low noise in order to observe spike signals of the order of a few tens of mV, the MOS transistors in the OTA are operated in the subthreshold region and combined with a low‐pass filter that consumes less than a hundred nW. The amplifier yielded a midband gain of 37.9 dB and the input‐referred noise was measured as 3.76 Vrms with a consumption of 4.30 W, with a 0.9 V power supply. These results correspond to a noise efficiency factor (NEF) of 2.23, close to the limit using a single differential OTA prepared by a CMOS process.

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12

S, Vinoth. "Design of Low Noise Amplifier." International Journal of Science and Engineering Applications 6, no. 2 (February 9, 2017): 66–67. http://dx.doi.org/10.7753/ijsea0602.1007.

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13

Sukhoruchko, O. N. "L-Band Low-Noise Amplifier." Telecommunications and Radio Engineering 63, no. 2 (2005): 151–55. http://dx.doi.org/10.1615/telecomradeng.v63.i2.50.

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14

Jefferts, S. R., and F. L. Walls. "A low noise cascode amplifier." Journal of Research of the National Bureau of Standards 92, no. 6 (November 1987): 383. http://dx.doi.org/10.6028/jres.092.039.

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15

Smith, A., R. Sandell, J. Burch, and A. Silver. "Low noise microwave parametric amplifier." IEEE Transactions on Magnetics 21, no. 2 (March 1985): 1022–28. http://dx.doi.org/10.1109/tmag.1985.1063665.

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16

Lee, Wooram, and Ehsan Afshari. "Low-Noise Parametric Resonant Amplifier." IEEE Transactions on Circuits and Systems I: Regular Papers 58, no. 3 (March 2011): 479–92. http://dx.doi.org/10.1109/tcsi.2010.2072370.

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17

Lei, Kaizhuo, Jiao Su, Jintao Shang, Quanshun Cui, and Haibo Yang. "Ultra-Wideband Low-Noise Amplifier." Physics Procedia 25 (2012): 1802–8. http://dx.doi.org/10.1016/j.phpro.2012.03.314.

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18

Hyyppa, K., and K. Ericson. "Low-noise photodiode-amplifier circuit." IEEE Journal of Solid-State Circuits 29, no. 3 (March 1994): 362–65. http://dx.doi.org/10.1109/4.278362.

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19

Ravim and Suma K. V. "Low Noise EEG Amplifier Board for Low Cost Wearable BCI Devices." International Journal of Biomedical and Clinical Engineering 5, no. 2 (July 2016): 17–28. http://dx.doi.org/10.4018/ijbce.2016070102.

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Designing a real-time BCI device requires an Electroencephalogram (EEG) acquisition system and a signal processing system to process that acquired data. EEG acquisition boards available in market are expensive and they are required to be connected to computer for any processing work. Various low cost Digital Signal Processor (DSP) boards available in market come with internal Analog to Digital converters and peripheral interfaces. The idea is to design a low cost EEG amplifier board that can be used with these commercially available DSP boards. The analog data from EEG amplifier can be converted to digital data by DSP board and sent to computer via an interface for algorithm development and further control operations. EEG amplifiers are highly affected by noise from environment. Proper noise reduction techniques are implemented and simulated in circuit design. Each filter stage and noise reduction circuit is evaluated for a low noise design.

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20

De Lima, Jader A. "A Compact Low-Distortion Low-Power Instrumentation Amplifier." Journal of Integrated Circuits and Systems 5, no. 1 (November 21, 2010): 33–41. http://dx.doi.org/10.29292/jics.v5i1.308.

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A CMOS instrumentation amplifier based on a simple topology that comprises a double-input Gm-stage and a low-distortion class-AB output stage is presented. Sub-threshold design techniques are applied to attain high figures of differential-gain and rejection parameters. Analyses of input-referred noise and CMRR are comprehensively carried out and their dependence on design parameters determined. The prototype was fabricated in standard n-well CMOS process. For 5V-rail-to-rail supply and bias current of 100nA, stand-by consumption is only 16μW. Low-frequency parameters are ADM=86dB, CMRR=89.3dB, PSRR+=87dB, PSRR-=74dB. For a 6.5pF-damping capacitor, ΦM=73º and GBW=47KHz. The amplifier exhibits a THD of –64.5dB @100Hz for a 1Vpp-output swing. Input-noise spectral density is 5.2μV/ Hz @1Hz and 1.9μV/ Hz @10Hz, which gives an equivalent input-noise of 37.6μV, over 1Hz-200Hz bandwidth. This circuit may be employed for low-frequency, low-distortion signal processing, advantageously replacing the conventional 3-opamp approach for instrumentation amplifiers.

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21

Wang, Zhen, Xiao Wang, Guijun Shu, Meng Yin, Shoushuang Huang, and Ming Yin. "Power-to-Noise Optimization in the Design of Neural Recording Amplifier Based on Current Scaling, Source Degeneration Resistor, and Current Reuse." Biosensors 14, no. 2 (February 19, 2024): 111. http://dx.doi.org/10.3390/bios14020111.

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This article presents the design of a low-power, low-noise neural signal amplifier for neural recording. The structure reduces the current consumption of the amplifier through current scaling technology and lowers the input-referred noise of the amplifier by combining a source degeneration resistor and current reuse technologies. The amplifier was fabricated using a 0.18 μm CMOS MS RF G process. The results show the front-end amplifier exhibits a measured mid-band gain of 40 dB/46 dB and a bandwidth ranging from 0.54 Hz to 6.1 kHz; the amplifier’s input-referred noise was measured to be 3.1 μVrms, consuming a current of 3.8 μA at a supply voltage of 1.8 V, with a Noise Efficiency Factor (NEF) of 2.97. The single amplifier’s active silicon area is 0.082 mm2.

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22

Scandurra, Graziella, Gino Giusi, and Carmine Ciofi. "Single JFET Front-End Amplifier for Low Frequency Noise Measurements with Cross Correlation-Based Gain Calibration." Electronics 8, no. 10 (October 21, 2019): 1197. http://dx.doi.org/10.3390/electronics8101197.

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We propose an open loop voltage amplifier topology based on a single JFET front-end for the realization of very low noise voltage amplifiers to be used in the field of low frequency noise measurements. With respect to amplifiers based on differential input stages, a single transistor stage has, among others, the advantage of a lower background noise. Unfortunately, an open loop approach, while simplifying the realization, has the disadvantage that because of the dispersions in the characteristics of the active device, it cannot ensure that a well-defined gain be obtained by design. To address this issue, we propose to add two simple operational amplifier-based auxiliary amplifiers with known gain as part of the measurement chain and employ cross correlation for the calibration of the gain of the main amplifier. With proper data elaboration, gain calibration and actual measurements can be carried out at the same time. By using the approach we propose, we have been able to design a low noise amplifier relying on a simplified hardware and with background noise as low as 6 nV/√Hz at 200 mHz, 1.7 nV/√Hz at 1 Hz, 0.7 nV/√Hz at 10 Hz, and less than 0.6 nV/√Hz at frequencies above 100 Hz.

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23

Zhao, Wenzhuo. "Comparison Of Three CMOS Amplifiers Used in Communication." Highlights in Science, Engineering and Technology 111 (August 19, 2024): 18–23. http://dx.doi.org/10.54097/pkmmt761.

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With the rapid development of wireless communication technology, the low power consumption, low cost, and high efficiency of wireless communication equipment have become the development trend. Because of the increasing problems caused by power consumption, to meet the needs of people and the market, people should first understand the principle of low-power amplifiers and scientific research results to get inspiration. This paper summarizes the advantages and disadvantages of three kinds of amplifiers and draws some conclusions to better understand the low-power amplifier. Ultra-low power low noise amplifier circuit with high gain and low voltage operating at 5.2GHz. The folded cascade structure and forward substrate bias technology are used to reduce the operating voltage of LNA, and the input impedance matching of the first amplifier is achieved by the source inductance negative feedback technology. The second stage amplifier introduces the transformer negative feedback Transconductance enhancement technique. The second amplifier is 5.8GHz CMOS power amplifier. A computer-aided method for calculating device values in an RC feedback network is used to improve the stability of a power amplifier. The single-ended power amplifier is designed by using Shanghai 0.18μm CMOS technology. The lase one is ultra-low noise, high linear ultra-wideband low noise amplifier circuit operating at 3.1-10.6GHz. It mainly consists of two stages: the first stage is the input matching stage, which adopts the common gate structure to realize the broadband input matching; The second stage is an amplifier stage, which is composed of an improved common source common gate structure.

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24

Groner, Samuel, and Martin Polak. "Low-Distortion, Low-Noise Composite Operational Amplifier." Journal of the Audio Engineering Society 65, no. 5 (May 26, 2017): 402–7. http://dx.doi.org/10.17743/jaes.2017.0008.

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25

Song, Sixuan, and Kai Chen. "Ultralow-Noise Chopper Amplifier for Seafloor E-Field Measurement." Sensors 24, no. 6 (March 17, 2024): 1920. http://dx.doi.org/10.3390/s24061920.

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The seafloor E-field signal is extremely weak and difficult to measured, even with a high signal-to-noise ratio. The preamplifier for electrodes is a key technology for ocean-bottom electromagnetic receivers. In this study, a chopper amplifier was proposed and developed to measure the seafloor E-field signal in the nanovolt to millivolt range at significantly low frequencies. It included a modulator, transformer, AC amplifier, high-impedance (hi-Z) module, demodulator, low-pass filter, and chopper clock generator. The injected charge in complementary metal-oxide semiconductor (CMOS) switches that form the modulator is the main source of 1/f noise. Combined with the principles of peak filtering and dead bands, a hi-Z module was designed to effectively reduce low-frequency noise. The chopper amplifier achieved an ultralow voltage noise of 0.6 nV/rt (Hz) at 1 Hz and 1.2 nV/rt (Hz) at 0.001 Hz. The corner frequency was less than 100 mHz, and there were few 1/f noises in the effective observation frequency band used for detecting electric fields. Each component is described with relevant tradeoffs that realize low noise in the low-frequency range. The amplifier was compact, measuring Ø 68 mm × H 12 mm, and had a low power consumption of approximately 23 mW (two channels). The fixed gain was 1500 with an input voltage range of 2.7 mVPP. The chopper amplifiers demonstrated stable performance in offshore geophysical prospecting applications.

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26

Shukla, Sachchida Nand, Syed Shamroz Arshad, and Geetika Srivastava. "NPN Sziklai pair small-signal amplifier for high gain low noise submicron voltage recorder." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (March 1, 2022): 11. http://dx.doi.org/10.11591/ijpeds.v13.i1.pp11-22.

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Small signal-to-noise ratio (SNR) and multiple noise sources, coupled with very weak signal amplitudes of bio signals make brain-computer interface (BCI) application studies a challenging task. The front-end recorder amplifiers receive very-weak signal (few μV) from high impedance electrodes and for efficient processing of such weak and low frequency (<1 kHz) signals a high gain amplifier with very low operating voltage and low total harmonic distortion (THD) is required. Existing amplifiers suffer from problem of high non-linearity and low common mode rejection. A good sense amplifier at predeceasing stage can solve this problem. Utilizing very high amplification factor of Sziklai Pair, this paper proposes two circuit topologies of common-emitter and common-collector negative-positive-negative (NPN) Sziklai Pair small signal amplifiers suitable for use in preamplifier stages of such signal acquisition circuit. Present study provides broad-spectrum of analysis of these amplifiers covering effect of additional biasing resistance RA, variation of ‘ideal forward maximum beta’ β, temperature dependency, noise sensitivity and phase variation. The tunable capability of first topology makes it a suitable candidate in wide variety of other applications. The first amplifier operates on very low input voltage range (0.1μV-6mV) whereas the second amplifier works on 100 μV-11 mV range of input voltage.

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27

Scandurra, Graziella, Gianluca Cannatà, and Carmine Ciofi. "Differential ultra low noise amplifier for low frequency noise measurements." AIP Advances 1, no. 2 (2011): 022144. http://dx.doi.org/10.1063/1.3605716.

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28

Schuh, Patrick, Hardy Sledzik, Rolf Reber, Andreas Fleckenstein, Ralf Leberer, Martin Oppermann, Rüdiger Quay, et al. "X-band T/R-module front-end based on GaN MMICs." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 22, 2009): 387–94. http://dx.doi.org/10.1017/s1759078709990389.

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Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

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29

Jiang, Dahai, Qinan Chen, Zheng Li, Qiang Shan, Zihui Wei, Jinjin Xiao, and Shuilong Huang. "The Design of a Low Noise and Low Power Current Readout Circuit for Sub-pA Current Detection Based on Charge Distribution Model." Electronics 11, no. 11 (June 5, 2022): 1791. http://dx.doi.org/10.3390/electronics11111791.

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In this article, we proposed an analytical model based on charge distribution for switched-capacitor trans-impedance amplifiers (SCTIAs). The changes in the load state of the amplifier under different operating conditions and the influence of the gain of the operational amplifier (Opamp) on the trans-impedance gain are analyzed to improve the design theory of switched-capacitor trans-impedance amplifiers. According to the conclusion drawn from the analysis, the trans-impedance amplifier (TIA) has been designed by adopting “correlated double sampling technology” and “cross-connection technology” to optimize input-referred noise current, power consumption, and trans-impedance gain. As a result, the trans-impedance gain reaches up to 206 dB, while the bandwidth is 3 kHz. The current readout system achieves an input-referred noise current floor of 2.96 fA/Hz at 1 kHz, and the power consumption of the system is 0.643 mW. The circuit has been simulated with the technology of 0.18 μm, and the layout area is 1000 μm × 500 μm.

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30

Belous, O. I., A. I. Fisun, and O. N. Sukhoruchko. "M-Band Low-Noise Semiconductor Amplifier." Telecommunications and Radio Engineering 63, no. 5 (2005): 435–41. http://dx.doi.org/10.1615/telecomradeng.v63.i5.60.

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31

Ganesan, Sivakumar, Edgar Sanchez-Sinencio, and Jose Silva-Martinez. "A Highly Linear Low-Noise Amplifier." IEEE Transactions on Microwave Theory and Techniques 54, no. 12 (December 2006): 4079–85. http://dx.doi.org/10.1109/tmtt.2006.885889.

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32

Malevich, I. Yu, and P. V. Zayats. "Аdaptive broadband low-noise RF amplifier." Doklady BGUIR 18, no. 6 (October 1, 2020): 66–74. http://dx.doi.org/10.35596/1729-7648-2020-18-6-66-74.

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Adaptive broadband low-noise radio frequency amplifiers (ABLNRFA) are widely used in the construction of systems for protecting radio receiving paths from nonlinear damage in a non-stationary electromagnetic environment (EME). One of the promising focus areas on the creation of ABLNRFA is the development of devices in the class of circuits with switched networks. The creation of such devices has certain features, since, along with the need to ensure a low noise figure and digital control of the regulation characteristic, it is required to provide high linearity and a large dynamic range (DR) of the device. This paper presents the results of the logical-heuristic synthesis of ABLNRFA with an adaptively adjustable transducer gain, which changes due to switching of transformer feedback circuits. In order to check the functional and technical characteristics of the synthesized ABLNRFA and optimize its parameters, a model was developed and studied in the ADS environment. The proposed ABLNRFA technical solution provides a discrete (23, 14, 10 and 5 dB) wideband change in the transmission coefficient, while the DR for third-order intermodulation in terms of a 1 MHz band is 83, 92, 98 and 104 dB, respectively. A step change in the transducer gain in the circuit of the lossless feedback circuit developed by ABLNRFA avoids the accumulation of additional noise in the structure and provides a low-noise figure that does not exceed 1 dB. The technical characteristics of ABLNRFA allow one to adaptively increase the overload capacity of the radio receiving path with a proportional expansion of its DR in the conditions of non-stationary EME, and thus increase the efficiency of the level protection system against nonlinear damage to the receiving paths of radio communication, radar and radio navigation.

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33

Shi, B., and Y. W. Chia. "Ultra-wideband SiGe low-noise amplifier." Electronics Letters 42, no. 8 (2006): 462. http://dx.doi.org/10.1049/el:20064413.

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Kim, C. W., M. S. Jung, and S. G. Lee. "Ultra-wideband CMOS low noise amplifier." Electronics Letters 41, no. 7 (2005): 384. http://dx.doi.org/10.1049/el:20058254.

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35

Jeffery, Mark, and Eiichi Goto. "Low noise Josephson dc parametric amplifier." Journal of Applied Physics 75, no. 11 (June 1994): 7550–58. http://dx.doi.org/10.1063/1.356630.

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36

Amin, Najam Muhammad, Lianfeng Shen, Zhi-Gong Wang, Muhammad Ovais Akhter, and Muhammad Tariq Afridi. "60 GHz-Band Low-Noise Amplifier." Journal of Circuits, Systems and Computers 26, no. 05 (February 8, 2017): 1750075. http://dx.doi.org/10.1142/s021812661750075x.

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This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

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Ramya, T. Rama Rao, and Revathi Venkataraman. "Concurrent Multi-Band Low-Noise Amplifier." Journal of Circuits, Systems and Computers 26, no. 06 (March 5, 2017): 1750104. http://dx.doi.org/10.1142/s0218126617501043.

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With rapid expansions of wireless communications, requirements for transceivers that support concurrent multiple services are continuously increasing and demanding design of a concurrent low-noise amplifier (LNA) with low noise figure (NF), high gain, and high linearity over a wide frequency range for various wireless applications. The proposed work focuses on a concurrent multi-band LNA that works at navigational frequencies, namely, of 1.2[Formula: see text]GHz and 1.5[Formula: see text]GHz, wireless communication frequencies, namely, of 2.45[Formula: see text]GHz and 3.3[Formula: see text]GHz, dedicated short range communication (DSRC) frequency of 5.8[Formula: see text]GHz for the vehicular communication applications. This circuit has a distinct input matching network which resonates at all desired five frequency bands and is achieved by adapting frequency transformation method. To accomplish simultaneous reception of the desired penta-band, the output matching is designed with simple LC matching network with the aid of load-pull methodology.

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38

Smith, David M. P., Laurens Bakker, Roel H. Witvers, Bert E. M. Woestenburg, and Keith D. Palmer. "Low noise amplifier for radio astronomy." International Journal of Microwave and Wireless Technologies 5, no. 4 (January 23, 2013): 453–61. http://dx.doi.org/10.1017/s1759078712000840.

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A compact, microstrip, two-stage, room temperature, single-ended low noise amplifier (LNA) is designed using commercial components for Aperture Tile in Focus (APERTIF), a square kilometre array (SKA) pathfinder project. Various techniques are investigated to insert inductance between the source pad of the package and the ground plane of the printed circuit board (PCB), with the chosen design able to do this using standard manufacturing techniques. The desired noise temperature of 25 K (noise figure (NF) of 0.36 dB) is met over the 1.0–1.8 GHz band, with an input return loss better than 10 dB.

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39

Hameed, A., and Ali Oudah. "Improved Design of Low Noise Amplifier." International Journal of Multimedia and Ubiquitous Engineering 10, no. 1 (January 31, 2015): 255–64. http://dx.doi.org/10.14257/ijmue.2015.10.1.25.

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40

Strutz, S. J., and K. J. Williams. "Low-noise hybrid erbium/Brillouin amplifier." Electronics Letters 36, no. 16 (2000): 1359. http://dx.doi.org/10.1049/el:20001016.

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41

Neilinger, P., M. Trgala, and M. Grajcar. "Cryogenic low noise 2.2–3GHz amplifier." Cryogenics 52, no. 7-9 (July 2012): 362–65. http://dx.doi.org/10.1016/j.cryogenics.2012.02.006.

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42

Riedesel, Mark A., John A. Orcutt, and Robert D. Moore. "Limits of sensitivity of inertial seismometers with velocity transducers and electronic amplifiers." Bulletin of the Seismological Society of America 80, no. 6A (December 1, 1990): 1725–52. http://dx.doi.org/10.1785/bssa08006a1725.

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Abstract Portable instruments such as ocean bottom seismographs and the PASSCAL recorders often use rugged, portable geophones. The desire to use such sensors for relatively low-frequency work has raised questions about the limits of their sensitivity. The lower and upper frequency limits of performance of seismic sensors are determined by the sensor's mass, period, and Q, and by the amplifiers used with those sensors. We have tested Mark Products 1 Hz, 2 Hz, and 4.5 Hz velocity transducers against Streckeisen seismometers in order to examine the limits of their performance in measuring ground noise, particularly at low frequencies. Among the velocity transducers, only the 1 Hz Mark Products L-4 sensor provided good resolution of the 6-sec microseism peak. For this sensor, the lower limits of sensitivity was at approximately 0.06 Hz, although this depends on the amplifier used and the noise level at a given site. The amplifiers examined included conventional, low power, and commutating auto-zero operational amplifiers. It was found that the noise levels of the amplifiers intersected the ground noise level at frequencies ranging between 0.06 and 0.2 sec, depending on the amplifier and the exact circuit design. Measurements indicated that by modeling the amplifier noise for a given circuit correctly, the performance of an amplifier can be predicted with a high degree of accuracy, obviating the need for actual circuit construction to determine performance in the field. Given the very steep slope of the ground noise spectrum between 0.05 and 0.1 Hz and the rapid fall off in a seismometer's output below its resonant frequency, it would require a lowering of amplifier noise by more than an order of magnitude to be able to resolve ground noise at frequencies lower than 0.05 Hz using relatively small geophones such as the L-4. To resolve ground noise at lower frequencies, it is necessary to use a seismometer with a displacement transducer to sense the mass position, such as Guralp or Streckeisen sensors.

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Wei, Qian, Jing Ping Liu, Lu Wang, and Hui Chang Zhao. "The Design of 5.25 GHz Low Noise Amplifier." Applied Mechanics and Materials 421 (September 2013): 658–62. http://dx.doi.org/10.4028/www.scientific.net/amm.421.658.

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This paper has designed a 5.25 GHz low noise amplifier. We used a low noise field effect tube (ATF36077) to design two slopes of low noise amplifier which improved the gain, and used a cross junction structure to make the input matching circuit. Besides, the amplifier enhanced the stability of the circuit through adding the microstrip in the source of 36077 as a negative feedback. The measurement results show in the 4.9 GHz to 5.3 GHz frequency band, low noise amplifier gain is 21 dB, less noise factor is less than 2 dB, and bandwidth is about 400MHz.

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44

Xu, Lisong, Hongwen Li, Pengzhi Li, and Chuan Ge. "A High-Voltage and Low-Noise Power Amplifier for Driving Piezoelectric Stack Actuators." Sensors 20, no. 22 (November 15, 2020): 6528. http://dx.doi.org/10.3390/s20226528.

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In this paper, based on the principles of general operational amplifiers, a high-voltage operational amplifier is developed. Considering the influences of piezoelectric stack actuators on the circuit, a novel structure using the high-voltage operational amplifier as a noninverting amplifier is proposed. Because of the simple circuit principles and the voltage feedback control structure, the proposed power amplifier has the advantages of low noise and small size, and it can be realized by discrete electric elements easily. In the application of precision positioning, a power amplifier using the proposed circuit principles for driving piezoelectric stack actuators is designed, simulated, and tested. The simulated results show that the proposed power amplifier could conform to the theory of the circuit. The experimental results show that the designed power amplifier conforms to the simulation, the bandwidth of the power amplifier is about 57 kHz, and the ripple of the power amplifier is less than 2 mV. Furthermore, the output of the proposed power amplifier maintains the same type of wave within in a large range of frequency, while the input is the sinusoidal or square wave, and the resolution of the mechanism which the power amplifier is applied in is about 4.5 nm. By selecting the critical electronic elements and using feedback control, the proposed circuit structure is able to realize a low-cost and high-performance power amplifier to drive piezoelectric stack actuators flexibly, which is the novel work of the paper.

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45

Arbet, Daniel, Gabriel Nagy, Martin Kováč, and Viera Stopjaková. "Fully Differential Difference Amplifier for Low-Noise and Low-Distortion Applications." Journal of Circuits, Systems and Computers 25, no. 03 (December 28, 2015): 1640019. http://dx.doi.org/10.1142/s0218126616400193.

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In this paper, a fully differential difference amplifier (FDDA) designed in 0.35[Formula: see text][Formula: see text]m CMOS technology is presented. The proposed amplifier reaches high dynamic range (DR) and low input referred noise. Comparison of noise performance of the proposed FDDA to an ordinary differential amplifier has been performed. Achieved results prove that the developed amplifier circuit can be advantageously used in applications that require a fully differential signal. Then, simulation results have been verified by the measurement of prototyped chips. In our work, the proposed amplifier was experimentally employed in the analog frontend of the readout interface (RI) for a Micro-Electro-Mechanical-Systems (MEMS) capacitive microphone.

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46

Nebhen, Jamel, Pietro M. Ferreira, and Sofiene Mansouri. "A Chopper Stabilization Audio Instrumentation Amplifier for IoT Applications." Journal of Low Power Electronics and Applications 10, no. 2 (April 16, 2020): 13. http://dx.doi.org/10.3390/jlpea10020013.

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A low-noise instrumentation amplifier dedicated to a nano- and micro-electro-mechanical system (M&NEMS) microphone for the use in Internet of Things (IoT) applications is presented. The piezoresistive sensor and the electronic interface are respectively, silicon nanowires and an instrumentation amplifier. To design an instrumentation amplifier for IoT applications, different trade-offs are discussed like power consumption, gain, noise and sensitivity. Because the most critical noisy block is the amplifier, a delay-time chopper stabilization (CHS) technique is implemented around it to eliminate its offset and 1/f noise. The low-noise instrumentation amplifier is implemented in a 65-nm CMOS (Complementary metal–oxide–semiconductor) technology. The supply voltage is 2.5 V while the power consumption is 0.4 mW and the core area is 1 mm2. The circuit of the M&NEMS microphone and the amplifier was fabricated and measured. From measurement results over a signal bandwidth of 20 kHz, it achieves a signal-to-noise ratio (SNR) of 77 dB.

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47

Salama, Mohammed K., and Ahmed M. Soliman. "Low-voltage low-power CMOS RF low noise amplifier." AEU - International Journal of Electronics and Communications 63, no. 6 (June 2009): 478–82. http://dx.doi.org/10.1016/j.aeue.2008.03.007.

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48

Ivanov, Boris I., Dmitri I. Volkhin, Ilya L. Novikov, Dmitri K. Pitsun, Dmitri O. Moskalev, Ilya A. Rodionov, Evgeni Il’ichev, and Aleksey G. Vostretsov. "A wideband cryogenic microwave low-noise amplifier." Beilstein Journal of Nanotechnology 11 (September 30, 2020): 1484–91. http://dx.doi.org/10.3762/bjnano.11.131.

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A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

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49

Parker, S. R. "Technical noise in K‐band low‐noise cryogenic amplifier." Electronics Letters 52, no. 7 (April 2016): 539–41. http://dx.doi.org/10.1049/el.2015.4024.

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50

Edwards, P. J. "Low-noise optoelectronic amplifier using sub-shot noise light." Electronics Letters 29, no. 3 (1993): 299. http://dx.doi.org/10.1049/el:19930204.

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