Relevant bibliographies by topics / Low noise amplifier

Academic literature on the topic 'Low noise amplifier'

Author: Grafiati
Published: 4 June 2021
Last updated: 14 September 2024

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Journal articles on the topic "Low noise amplifier"

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Ali, Ghulam, and Faisal Mohd-Yasin. "Comprehensive Noise Modeling of Piezoelectric Charge Accelerometer with Signal Conditioning Circuit." Micromachines 15, no. 2 (February 17, 2024): 283. http://dx.doi.org/10.3390/mi15020283.

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This paper reports on noise modeling of a piezoelectric charge accelerometer with a signal conditioning circuit. The charge output is converted into voltage and amplified using a JFET operational amplifier that has high input resistance and low noise. The noise sources in the whole system include electrical and mechanical thermal noises of the accelerometer, thermal noises of resistors, and voltage and current noises of the operational amplifier. Noise gain of each source is derived from small signal circuit analysis. It is found that the feedback resistor of the operational amplifier is a major source of noise in low frequencies, whereas electrical thermal noise of the accelerometer dominates the rest of spectrum. This method can be used to pair a highly sensitive sensor with a single JFET operational amplifier instead of a multi-stage signal conditioning circuit.
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Cai, Dexi. "Systematic analysis of the principles and application scenarios of Low-Noise Amplifier." Applied and Computational Engineering 48, no. 1 (March 19, 2024): 106–13. http://dx.doi.org/10.54254/2755-2721/48/20241211.

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As society advances, new ideas and products are increasingly integrated into our daily lives. 5th generation mobile networks tech enables faster, lag-free connectivity, raising performance standards for components like Low-Noise Amplifiers. Summarizing Low-Noise Amplifier tech and applications helps researchers and firms leverage past knowledge and explore innovations. This paper analyzes Low-Noise Amplifier development and application, discussing types, principles, key performance indicators, and circuit structures of basic amplifiers. Five vital Low-Noise Amplifier characteristicsnoise figure, impedance matching, linearity, stability, and gainare examined. The author introduces design and application cases in radio astronomy, navigation systems, and 5th generation mobile networks communications based on Low-Noise Amplifier characteristics and performance requirements. The author concludes that advancing radio frequency tech requires improved Low-Noise Amplifiers, especially for high-frequency signals in 5th generation mobile networks. Promising noise performance enhancements come from technologies like modified high electron mobility transistors on GaAs and InP substrates. Monolithic Microwave Integrated Circuit integration reduces size while maintaining cost-effective performance. Future advancements in these areas could further boost Low-Noise Amplifier performance.
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Deepika, G., and K. S. Rao. "A Low Power, Low Noise Amplifier for Recording Neural Signals." IAES International Journal of Artificial Intelligence (IJ-AI) 6, no. 1 (March 1, 2017): 18. http://dx.doi.org/10.11591/ijai.v6.i1.pp18-25.

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The design of a low power amplifier for recording EEG signals is presented. The low noise design techniques are used in this design to achieve low input referred noise that is near the theoretical limit of any amplifier using a differential pair as input stage. To record the neural spikes or local field potentials (LFP’s) the amplifier’s bandwidth can be adjusted. In order to reject common-mode and power supply noise differential input pair need to be included in the design. The amplifier achieved a gain of 53.7dB with a band width of 0.5Hz to1.1 kHz and input referred noise measured as 357 nV<sub>rms </sub>operated with a supply voltage of 1.0V. The total power consumed is around 3.19µW. When configured to record neural signals the gain measured is 54.3 dB for a bandwidth of 100 Hz and the input referred noise is 1.04µ V<sub>rms</sub>. The amplifier was implemented in 180nm technology and simulated using Cadence Virtuoso.
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Lee, Tze Kiu, Wing Shing Chan, and T. Y. M. Siu. "Power amplifier/low noise amplifier RF switch." Electronics Letters 36, no. 24 (2000): 1983. http://dx.doi.org/10.1049/el:20001404.

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Seo, Heesong, Hyejeong Song, Changjoon Park, Jehyung Yoon, Inyoung Choi, and Bumman Kim. "Blocker filtering low-noise amplifier for SAW-less Bluetooth receiver system." International Journal of Microwave and Wireless Technologies 1, no. 5 (October 2009): 447–52. http://dx.doi.org/10.1017/s1759078709990699.

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A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth™ application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from each path, the large interferers are rejected and only the wanted signal is amplified. Therefore, it becomes a narrow-band amplifier with blocker filtering capability, realizing a receiver system without need of the off-chip SAW filter. The BF-LNA is designed using a 0.13-μm CMOS process. The measured performances are a gain of 11.4 dB, and a noise figure of 1.85 dB. Attenuation levels at 400 MHz apart from the target frequency are −13 and −29 dBc at each sideband. The P1dB,in and IIP3 are −8.2 and 1.46 dBm, respectively. The proposed BF-LNA can reject large interferers at the front-end of the receiver system with a good noise figure.
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Memioglu, O., O. Kazan, A. Karakuzulu, I. Turan, A. Gundel, F. Kocer, and O. A. Civi. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (February 24, 2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.
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Achtenberg, Krzysztof, Graziella Scandurra, Janusz Mikołajczyk, Carmine Ciofi, and Zbigniew Bielecki. "Transimpedance Amplifier for Noise Measurements in Low-Resistance IR Photodetectors." Applied Sciences 13, no. 17 (September 4, 2023): 9964. http://dx.doi.org/10.3390/app13179964.

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This paper presents the design and testing of an ultra-low-noise transimpedance amplifier (TIA) for low-frequency noise measurements on low-impedance (below 1 kΩ) devices, such as advanced IR photodetectors. When dealing with low-impedance devices, the main source of background noise in transimpedance amplifiers comes from the equivalent input voltage noise of the operational amplifier, which is used in a shunt–shunt configuration to obtain a transimpedance stage. In our design, we employ a hybrid operational amplifier in which an input front end based on ultra-low-noise discrete JFET devices is used to minimize this noise contribution. When using IF3602 JFETs for the input stage, the equivalent voltage noise of the hybrid operational amplifier can be as low as 4 nV/√Hz, 2 nV/√Hz, and 0.9 nV/√Hz at 1 Hz, 10 Hz, and 1 kHz, respectively. When testing the current noise of an ideal 1 kΩ resistor, these values correspond to a current noise contribution of the same order as or below that of the thermal noise of the resistor. Therefore, in cases in which the current flicker noise is dominant, i.e., much higher than the thermal noise, the noise contribution from the transimpedance amplifier can be neglected in most cases of interest. Test measurements on advanced low-impedance photodetectors are also reported to demonstrate the effectiveness of our proposed approach for directly measuring low-frequency current noise in biased low-impedance electronic devices.
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Krause, C., D. Drung, M. Götz, and H. Scherer. "Noise-optimized ultrastable low-noise current amplifier." Review of Scientific Instruments 90, no. 1 (January 2019): 014706. http://dx.doi.org/10.1063/1.5078572.

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Muhamad, Maizan, Norhayati Soin, and Harikrishnan Ramiah. "Design of Low Power Low Noise Amplifier using Gm-boosted Technique." Indonesian Journal of Electrical Engineering and Computer Science 9, no. 3 (March 1, 2018): 685. http://dx.doi.org/10.11591/ijeecs.v9.i3.pp685-689.

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This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated.
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Ren, Ming Yuan, Li Tian, Wei Wang, Xiao Wei Liu, and Zhi Gang Mao. "Design of Pre-Amplifiers for Photoelectric Detector." Applied Mechanics and Materials 380-384 (August 2013): 3308–11. http://dx.doi.org/10.4028/www.scientific.net/amm.380-384.3308.

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This paper presents the design of low noise CMOS pre-amplifiers based on photoelectric detection systems, which can directly affect the detecting precision of the whole systems. The design of pre-amplifier circuit from photoelectric detector was introduced. The photoelectric conversion circuit, amplifier circuit bandwidth, amplifier circuit noise, amplifier circuit stabilization and other questions were mainly discussed, and an amplifier circuit capable of effectively decreasing the noise, the temperature drift and a large dynamic range was designed. This paper analyzes the sources of photoelectric detection circuit internal noise, and gives the formulas of internal noise, designs a variable equivalent load photoelectric conversion circuit, and is verified by experiments. Then the result is used to reduce the noise of CMOS based operational amplifiers and finally implement the design work of pre-amp using 0.5μm CMOS Technology.
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Dissertations / Theses on the topic "Low noise amplifier"

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Ganesan, Sivakumar. "Highly linear low noise amplifier." Texas A&M University, 2003. http://hdl.handle.net/1969.1/5928.

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The CDMA standard operating over the wireless environment along with various other wireless standards places stringent specifications on the RF Front end. Due to possible large interference signal tones at the receiver end along with the carrier, the Low Noise Amplifier (LNA) is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a novel LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The novel LNA proposed achieves high linearity by canceling the IM3 tones in the main transistor in both magnitude and phase using the IM3 tones generated by an auxiliary transistor. Extensive Volterra series analysis using the harmonic input method has been performed to prove the concept of third harmonic cancellation and a design methodology has been proposed. The LNA has been designed to operate at 900MHz in TSMC 0.35um CMOS technology. The LNA has been experimentally verified for its functionality. Linearity is usually measured in terms of IIP3 and the LNA has an IIP3 of +21dBm, with a gain of 11 dB, NF of 3.1 dB and power consumption of 22.5 mW.
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Cherukumudi, Dinesh. "Ultra-Low Noise and Highly Linear Two-Stage Low Noise Amplifier (LNA)." Thesis, Linköpings universitet, Elektroniska komponenter, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71355.

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An ultra-low noise two-stage LNA design for cellular basestations using CMOS is proposed in this thesis work.  This thesis is divided into three parts. First, a literature survey which intends to bring an idea on the types of LNAs available and their respective outcomes in performances, thereby analyze how each design provides different results and is used for different applications. In the second part, technology comparison for 0.12µm, 0.18µm, and 0.25µm technologies transistors using the IBM foundry PDKs are made to analyze which device has the best noise performance. Finally, in the third phase bipolar and CMOS-based two-stage LNAs are designed using IBM 0.12µm technology node, decided from the technology comparison. In this thesis a two-stage architecture is used to obtain low noise figure, high linearity, high gain, and stability for the LNA. For the bipolar design, noise figure of 0.6dB, OIP3 of 40.3dBm and gain of 26.8dB were obtained. For the CMOS design, noise figure of 0.25dB, OIP3 of 46dBm and gain of 26dB were obtained. Thus, the purpose of this thesis is to analyze the LNA circuit in terms of design, performance, application and various other parameters. Both designs were able to fulfill the design goals of noise figure < 1 dB, OIP3 > 40 dBm, and gain >18 dB.
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Adl, Sanaz. "Low noise pre-amplifier/amplifier chain for high capacitance sensors." College Park, Md. : University of Maryland, 2007. http://hdl.handle.net/1903/7303.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2007.
Thesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Midtflå, Nils Kåre. "A 2.4 GHz Ultra-Low-Power Low-Noise-Amplifier." Thesis, Norwegian University of Science and Technology, Department of Electronics and Telecommunications, 2010. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-10955.

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In this thesis different aspects of general low power design and LNA-design have been studied. A new architecture for an ultra low power LNA is proposed and simple simulation results are presented. Simulations show that there should be possible to design a 2.4 GHz LNA that works sufficiently at 200 µA. The proposed architecture achieved a voltage gain over 20 dB from 2.32 to 2.5 GHz, a noise figure of 4.65 dB, IIP3 of -15.45 dBm and a input match of -9.5 dB. There is still a lot of work do and many simulations to perform before one can inconclusively conclude that the proposed architecture is a feasible solution, although the results generated in this thesis seem promising.
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Zheng, Wei. "Low-power low-noise DC-coupled sensor amplifier IC." Pullman, Wash. : Washington State University, 2008. http://www.dissertations.wsu.edu/Thesis/Summer2008/w_zheng_070908.pdf.

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Thesis (M.S. in electrical engineering)--Washington State University, August 2008.
Title from PDF title page (viewed on Mar. 11, 2009). "School of Electrical Engineering and Computer Science." Includes bibliographical references (p. 48-49).
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Cunningham, Michael Lawrence. "A High Temperature Wideband Low Noise Amplifier." Thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/78388.

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As the oil industry continues to drill deeper to reach new wells, electronics are being required to operate at extreme pressures and temperatures. Coupled with substantial real-time data targets, the need for robust high speed electronics is quickly on the rise. This paper presents a high temperature wideband low noise amplifier (LNA) with zero temperature coefficient maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate reliably up to an ambient temperature of 230°C with a minimum noise figure (NF) of 2.0 dB, gain of 16.1 dB, and P1dB of 19.1 dBm from 230.5MHz — 285.5MHz. The maximum variation with temperature from 25°C to 230°C is 1.53dB for NF and 0.65dB for gain.
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Qun, Wu, Qiu Jinghui, and an Deng Shaof. "AN INTEGRATED LOW-NOISE BLOCK DOWNCONVERTER." International Foundation for Telemetering, 1995. http://hdl.handle.net/10150/608420.

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International Telemetering Conference Proceedings / October 30-November 02, 1995 / Riviera Hotel, Las Vegas, Nevada
In this paper, a small-sized low-noise integrated block downconverter (LNB) used for Ku-band direct reception from broadcasting satellites (DBS) is proposed. The operating frequency of the LNB is from 11.7 to 12.2GHz. The outlook dimension is 41 X 41 X 110mm^3. Measured results show that the average gain of the LNB is 57dB, and noise figures are less than 1.7dB. It has been found that clear TV pictures have been received using the LNB for the experiment of receiving the "BS-2b" (Japanese broadcasting satellite) at Harbin region, Heilongjiang Province, P. R. China.
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Mohammad, Afzal. "Low noise amplifier design for dense phased arrays." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-518.

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Radio Astronomers demand for highly sensitive astronomical facility. Their demand is a radio telescope that can detect the weakest and deepest radio signal. To fulfill the demand of high sensitive telescope, an entirely new way of realizing a radio telescope is required. One of the most important components in the RF front end that determines the sensitivity of a radio telescope is the Low Noise Amplifier (LNA).

The project has the selected process technologies which was searched and about the different noise matching topologies, input matching topology, wide band noise and input matching topologies has discussed by the author to the requirement of LNA in Astronomical purposes.

In this report, the best process technology candidate was chosen apart from selected technology candidates to obtain the minimum noise temperature over broad range frequency upon the modern era of Astronomical LNAs.

The work was continued to design a single ended LNA to obtain desired transistor parameters while using different noise matching topologies, input matching topologies, wideband noise and input matching topologies to have an LNA achievement with the design goal.

Further two stage amplifier was implemented to obtain minimum noise temperature, good stability, high gain, good input and output reflection coefficient with less power consumption.

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Bandla, Atchaiah. "Highly Linear 2.45 GHz Low-Noise Amplifier Design." Thesis, Linköpings universitet, Fysik och elektroteknik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-119982.

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One critical component of the communication receiver of front-end system is the low-noise amplifier (LNA). For good sensitivity and dynamic range, the LNA should provide a low noise figure and maximum attainable power gain. Another concern is the linearity of the LNA. Strong signals produce intermodulation products in a frequency band close to the operating frequency that might affect the performance of the receiver. In many cases, the intermodulation products can be reduced by increasing the current through the active device. Hence, a trade-off between power consumption and linearity must be considered when designing the LNA. The thesis includes the bias network design, stability analysis, matching network design and layout design of the LNA RF module with layout simulation. The simulation has been performed using Advanced Design System (ADS) simulation software. After implementation of LNA on a PCB, the LNA is measured with the help of the power supply unit and vector network analyzer. The proposed design aim is to provide a low noise figure (NF) and high gain while maintaining the low power consumption.
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Zhang, Xiaomeng. "Multi-finger MOSFET Low Noise Amplifier Performance Analysis." Wright State University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=wright1420814124.

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Books on the topic "Low noise amplifier"

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Vieira, Rafael, Nuno Horta, Nuno Lourenço, and Ricardo Póvoa. Tunable Low-Power Low-Noise Amplifier for Healthcare Applications. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70887-0.

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Do, Hoang Cuong. Low noise amplifier for ZnS(Ag) scintillation chamber. Warszawa: Instytut Chemii i Techniki Jądrowej, 1998.

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Mohammadi, Behnam. A 5.8 GHz CMOS low noise amplifier for WLAN applications. Ottawa: National Library of Canada, 2003.

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Voncke, Ait. Study and design of low noise amplifier for DCS 1800 mobile systems. Manchester: UMIST, 1997.

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Jin, Heng. A 1-V, CMOS on SOI, 1.9-GHz CDMA low noise amplifier. Ottawa: National Library of Canada, 2000.

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Button, M. Design and construction of a S-band (2.5-2.7GHZ) low noise amplifier using feedback technique. Bradford: University of Bradford Postgraduate School of Electrical and Electronic Engineering, 1986.

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B, Bhasin K., and United States. National Aeronautics and Space Administration., eds. Performance of a Y-Ba-Cu-O superconducting filter/GaAs low noise amplifier hybrid circuit. [Washington, DC]: National Aeronautics and Space Administration, 1992.

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Cassan, David J. A 1V transformer-feedback Low Noise amplifier for 5-6GHz WLAN in 0.18[mu]m CMOS. Ottawa: National Library of Canada, 2002.

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Božanić, Mladen, and Saurabh Sinha. Millimeter-Wave Low Noise Amplifiers. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69020-9.

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Bruccoleri, Federico. Wideband low noise amplifiers exploiting thermal noise cancellation. Dordrecht: Springer, 2005.

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Book chapters on the topic "Low noise amplifier"

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Leung, Bosco. "Low Noise Amplifier." In VLSI for Wireless Communication, 107–62. Boston, MA: Springer US, 2011. http://dx.doi.org/10.1007/978-1-4614-0986-1_3.

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Yuan, Jiann-Shiun. "Low-Noise Amplifier Reliability." In CMOS RF Circuit Design for Reliability and Variability, 11–18. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0884-9_3.

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Svelto, Francesco, Enrico Sacchi, Francesco Gatta, Danilo Manstretta, and Rinaldo Castello. "CMOS Low-Noise Amplifier Design." In Low-Power Design Techniques and CAD Tools for Analog and RF Integrated Circuits, 251–65. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/0-306-48089-1_11.

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Hou, Xueshi, Xiaoling Zhong, Zhilong Zhao, Liangyi Deng, Han Mei, Xue Wei, Yuting Jiang, Baiqiu Liu, and Yong Fang. "0.8 GHz Low-Noise Amplifier Design." In New Developments of IT, IoT and ICT Applied to Agriculture, 77–87. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5073-7_8.

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Božanić, Mladen, and Saurabh Sinha. "Advanced Low-Noise Amplifier Optimization Topics." In Signals and Communication Technology, 253–86. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69020-9_8.

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Kumar, Shubham, Shubham Kumar, Avinash Singh, K. Sai Nischay, Sainnudeep Reddy Nayini, Deril Raju, Soumendra Dash, Ravi Teja, and Vijay Nath. "Design of CMOS Low Noise Amplifier." In Lecture Notes in Electrical Engineering, 321–31. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-1906-0_29.

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Bansal, Malti, and Ishita Sagar. "Design Considerations for Low Noise Amplifier." In Inventive Systems and Control, 979–91. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-1395-1_71.

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Iyer, Makesh, and T. Shanmuganantham. "Design of Low Noise Amplifier for 802.16e." In Proceedings of 2nd International Conference on Communication, Computing and Networking, 823–38. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1217-5_82.

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Bansal, Malti, and Jyoti. "Utilizing CMOS Low-Noise Amplifier for Bluetooth Low Energy Applications." In Advances in Intelligent Systems and Computing, 239–51. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1822-1_22.

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Zhong, Xiaoling, Haoxuan Sheng, Yong Fang, Yong Guo, Baiqiu Liu, Zhilong Zhao, and Yangyang Wang. "L-Band Ultra-Wideband Low-Noise Amplifier Design." In New Developments of IT, IoT and ICT Applied to Agriculture, 99–108. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5073-7_10.

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Conference papers on the topic "Low noise amplifier"

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van der Rots, Raymond, Bjørnar Karlsen, and Arnfinn A. Eielsen. "Ultra Low-Distortion, Low-Noise Transimpedance Amplifier." In 2024 Conference on Precision Electromagnetic Measurements (CPEM), 1–2. IEEE, 2024. http://dx.doi.org/10.1109/cpem61406.2024.10646051.

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Yurke, B., P. G. Kaminsky, M. D. Reid, E. A. Whittaker, A. D. Smith, A. H. Silver, and R. W. Simon. "Progress in noise squeezing via a Josephson parametric amplifier." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.tul2.

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We are engaged in an experimental effort to generate and detect squeezed vacuum fluctuations at microwave frequencies using a Josephson parametric amplifier. We have demonstrated 42% deamplification of 4.2-K thermal noise at 19.4 GHz. At this frequency the vacuum fluctuation noise is an order of magnitude smaller than 4.2-K thermal noise. We have installed cryogenic HEMT amplifiers in our apparatus, thereby increasing the detector sensitivity by an order of magnitude. Josephson parametric amplifiers have been notorious for exhibiting excess noise whose origin is still controversial. We have performed a systematic study of the noise performance of our device both below and above threshold in a variety of modes of operation. The experiments indicate that the excess noise in our device arises from low-frequency noise (0-20 MHz) propagating down dc bias lines. When an intense coherent oscillation is present in the signal passband, such as the pump when the amplifier is in the four-photon mode or the period doubled oscillations when the amplifier is operated in the three-photon mode above threshold, the low- frequency noise mixes with the coherent oscillation to generate noise sidebands in the amplifier's passband. Nevertheless, in suitable conditions, extremely low noise and high gains were achieved.
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Zikii, A. N., A. Iu Voloshchuk, and M. S. Shvetsov. "Broadband Low Noise Amplifier." In ТЕНДЕНЦИИ РАЗВИТИЯ НАУКИ И ОБРАЗОВАНИЯ. НИЦ «Л-Журнал», 2018. http://dx.doi.org/10.18411/lj-10-2018-188.

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Movshovich, R., B. Yurke, P. G. Kaminsky, A. D. Smith, A. H. Silver, and R. W. Simon. "Quantum noise squeezing at microwave frequencies." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.fbb2.

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We report the observation of zero-point noise squeezing by means of a Josephson- junction parametric amplifier, which has been used previously to squeeze 4.2 K thermal noise1. To observe quantum noise squeezing, a number of improvements were made on the apparatus; these include the in stallation of two low-noise cryogenic high- electron-mobility-transistor (HEMT) amplifiers, which boosted the detector sensitivity an order of magnitude to 215 K. The Josephson- junction parametric amplifier was cooled to 30 mK and was operated in the degenerate mode with the signal carrier frequency at 19.16 GHz. At this frequency the vacuum noise floor is hv/2k = 0.46 K. In the deamplified quadrature a drop in the noise of 0.223 K was observed relative to the pump-off noise floor. The pump-off noise floor was established to be within 3.4 + 2.0% of the vacuum noise floor by varying the temperature of the cold termination at the parametric amplifier's input from 30 mK to 1K. A probe signal at the input of the first HEMT amplifier was used to establish that the detector system saturation was less than 7 × 10−4 dB. We have thus observed squeezing 47% ± 8% below the vacuum noise floor.
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Junlin Song and Haoquan Hu. "L band low noise amplifier." In 2012 International Conference on Computational Problem-Solving (ICCP). IEEE, 2012. http://dx.doi.org/10.1109/iccps.2012.6384308.

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Jiang, Nianhua, Stephane Claude, Keith Yeung, and Dominic Garcia. "Low-noise InP HEMT amplifier." In SPIE Astronomical Telescopes + Instrumentation, edited by Jacobus M. Oschmann, Jr. SPIE, 2004. http://dx.doi.org/10.1117/12.551019.

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Liu, Jipeng. "Analysis of Low-Noise Amplifier." In 2021 6th International Conference on Intelligent Computing and Signal Processing (ICSP). IEEE, 2021. http://dx.doi.org/10.1109/icsp51882.2021.9408677.

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Trollier, T. "HF Cryogenic Low Noise Amplifier." In ADVANCES IN CRYOGENIC ENGEINEERING: Transactions of the Cryogenic Engineering Conference - CEC. AIP, 2004. http://dx.doi.org/10.1063/1.1774888.

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Drung, Dietmar, Christian Krause, Ulrich Becker, Hansjorg Scherer, and Franz J. Ahlers. "Ultrastable low-noise current amplifier." In 2014 Conference on Precision Electromagnetic Measurements (CPEM 2014). IEEE, 2014. http://dx.doi.org/10.1109/cpem.2014.6898556.

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Yang, Xiao, Jing Yang, Li-fen Lin, and Chao-dong Ling. "Low-power low-noise CMOS chopper amplifier." In 2010 International Conference on Anti-Counterfeiting, Security and Identification (2010 ASID). IEEE, 2010. http://dx.doi.org/10.1109/icasid.2010.5551831.

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Reports on the topic "Low noise amplifier"

1

Ratowsky, R. P., S. Dijaili, J. S. Kallman, M. D. Feit, and J. Walker. A Low-Noise Semiconductor Optical Amplifier. Office of Scientific and Technical Information (OSTI), March 1999. http://dx.doi.org/10.2172/792781.

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Vemuri, Hari, and Angelo S. Gilmore. Ultra Low Noise Infrared Detector Amplifier for Next Generation Standoff Detector. Fort Belvoir, VA: Defense Technical Information Center, January 2016. http://dx.doi.org/10.21236/ad1009598.

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SHerstneva, A. A. Design schematic of a low-noise amplifier over broadband frequency range. OFERNIO, March 2021. http://dx.doi.org/10.12731/ofernio.2021.24792.

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Xu, Yang. A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS). Fort Belvoir, VA: Defense Technical Information Center, January 2014. http://dx.doi.org/10.21236/ada596171.

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Andrekson, Peter A., Carl Lundstroem, Zhi Tong, and Ben Puttnam. Low Noise Optically Pre-amplified Lightwave Receivers and Other Applications of Fiber Optic Parametric Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, July 2010. http://dx.doi.org/10.21236/ada525446.

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Tracy, Lisa A., John L. Reno, Terry Hargett, Saeed Fallahi, and Michael Manfra. MilliKelvin HEMT Amplifiers for Low Noise High Bandwidth Measurement of Quantum Devices. Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1471452.

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Cantor, Robin. Low-Noise Amplifiers and Superconducting Flex Circuits for Frequency Domain Multiplexed Readout of Detector Arrays. Office of Scientific and Technical Information (OSTI), April 2017. http://dx.doi.org/10.2172/1349658.

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Yu, Chung. High Gain, Low Noise and Broadband Raman and Brillouin Fiber Optic Amplifiers, Channel Selectors and Switches. Fort Belvoir, VA: Defense Technical Information Center, September 1994. http://dx.doi.org/10.21236/ada301545.

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