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Dissertations / Theses on the topic 'Load-pull'
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Saini, Randeep. "Intelligence driven load-pull measurement strategies." Thesis, Cardiff University, 2013. http://orca.cf.ac.uk/51789/.
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The objective of this thesis is to provide improved load-pull measurement strategies based on an open-loop active load pull measurement system. A review of the evolution of non-linear measurement systems as well as behavioural model generation approaches has been presented. An intelligence driven active load-pull system has been presented in this thesis, based on deriving local PHD models to aid the prediction of the desired active signal in order to achieve a target reflection coefficient. The algorithm proved to be effective in reducing the number of iterations in an open-loop active load-pull system and thus improving the utilisation efficiency. A non-linear measurement approach suitable for wafer mapping and technology screening applications has also been presented as an application of this new algorithm. In this thesis, it has also been shown how the Cardiff Behavioural model is effective in its ability to interpolate or extrapolate non-linear measurement data and thereby improve the quality of measurement data and speed of measurement systems. This investigation was carried out in two stages; fundamental interpolation testing and harmonic interpolation and extrapolation testing.
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Woodington, Simon Philip. "Behavioural model analysis of active harmonic load-pull measurements." Thesis, Cardiff University, 2011. http://orca.cf.ac.uk/13000/.
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In this thesis, an investigation of the use of the poly-harmonic distortion model and related techniques is conducted, and applied to model fundamental and harmonic load-pull. Contained within the thesis is a detailed review of the development of the poly-harmonic distortion model and related methods. This thesis shows that although the poly-harmonic distortion model improves on the prediction of fundamental load-pull, over Hot-S-Parameters it still has a limited range of application. To address this observation, higher order models have been investigated along with Fourier methods allowing rapid extraction of the behavioral models. These methods allow conclusions to be drawn on the accuracy of the extracted models, by the direct observation of the magnitudes of the model coefficients. The thesis is concluded with the presentation of the results from third party, using a model extracted using the methods discussed in this thesis. The Model is of a 0.5W GaAs pHEMT at 9 GHz and is used within the design of a Class-J MMIC amplifier.
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Pereira, Alison Willian. "Fully-automated load-pull system based on mechanical tuners." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/17027.
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Mestrado em Engenharia Electrónica e TelecomunicaçõesPor razões de potência, linearidade e e ciência o ampli cador é um componente limitador de performance em qualquer tipo de aplicações relacionadas com estações base de voz e dados, motivando a indústria das telecomunica ções a investir em sistemas capazes de ajudar o projetista de Ampli cador de Potência (AP) a obter o máximo deste elemento ativo. O sistema de 'load-pull' é uma ferramenta essencial para auxiliar o projeto de ampli cadores de potência, permitindo determinar as condições ideais de impedância que maximizam a sua performance. Esta dissertação insere-se na área de caracterização e projeto de AP, em rádio frequência e visa a concepção, implementação e validação de um sitema automático de 'load-pull' passivo. Neste trabalho, realizou-se um estudo sobre os mais diversos tipos de sistemas de 'load-pull' utilizados na caracterização de transistores de alta potência. De modo a cumprir a nalidade desta dissertação, construí-se um sistema passivo automatizado de 'load-pull' capaz de lidar com potência 250W forma de onda contínua (CW) e 2.5 kWde potência de pico em relação a envolvente de modulação (PEP), onde a repetibilidade da malha de saída deste sistema é -60dB a uma frequência correspondente de 1.8GHz, garantindo uma boa precisão das impedâncias apresentadas ao transístor de microondas.
Due to power, linearity and e ciency reasons the PA is the performance limiting component in any state-of-the-art mobile voice and data base station, motivating the telecommunications industry to invest in systems capable of helping the designer of PA to get the most of the active devices. The load-pull system is an essential tool to assist the design of PA, allowing to determine the optimum matching conditions that maximizes the PA performance parameters. This dissertation ts in the area of radio frequency characterization and PA design, aiming the artful conception, implementation and validation of an automated passive load-pull system. In this work a study was also performed on the most diverse types of load-pull systems that are used in the characterization of high power transistors. In order to ful ll the purpose of this dissertation, an automated load-pull system was built, being capable to handle 250W of power in continuous wave (CW) and 2.5kW in peak-to-envelope (PEP), where the system repeatability of its output network is -60dB at a frequency of 1.8GHz, granting a good accuracy of impedances presented to the microwave transistor.
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Somasundaram, Meena Sivalingam. "Pulsed power and load-pull measurements for microwave transistors." [Tampa, Fla] : University of South Florida, 2009. http://purl.fcla.edu/usf/dc/et/SFE0003293.
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Leloir, Sébastien. "Etude, conception et réalisation d'un banc de caractérisation " Source-Pull / Load-Pull multiharmonique " pour applications radars." Rouen, 2005. http://www.theses.fr/2005ROUES010.
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Ce mémoire présente l'étude, la conception et la réalisation d'un banc de mesure Source-Pull / Load-Pull multiharmonique pour caractériser de manière fonctionnelle les composants microondes de puissance entrant dans la composition de radars. Le banc est capable d'effectuer, en mode CW ou impulsionnel, une synthèse d'impédances à la fréquence fondamentale et aux deux premières harmoniques, et de reconstituer, en temps réel, les formes d'ondes temporelles aux accès du composant. Parfaitement adapté aux besoins de Thales Air Defence, cet outil permettra à terme : de concevoir les circuits hyperfréquences non-linéaires optimisés en puissance ajoutée maximum et/ou en rendement en puissance ; de valider ou d'améliorer les modèles électrothermiques de composants non-linéaires utilisés dans les logiciels de simulation. Le système de caractérisation mis en œuvre est notamment indépendant de la fréquence de travail, de la nature du composant et des niveaux des puissances. Afin de montrer l'intérêt de son exploitation dans le domaine des radars, une première caractérisation a été réalisée sur un transistor type HBTThis study presents the investigation, the design and the realization of a Source-Pull / Load-Pull multiharmonic bench able to experimentally characterize microwave power devices entering the radar's line up. In CW or pulsed mode, the bench is able to make a synthesis of impedances at the fundamental frequency and at the two first harmonics, and is also able to reconstitute, in real time, the temporal waveforms at both components ports. Perfectly adapted to the needs of Thales Air Defence, this tool will allow in long term : to design the microwave non-linear circuit optimised with power added, power efficiency; to validate non-linear models of devices used in the simulation softwares. The characterization system implemented is independent of the work frequency, the component nature and the power levels. In order to show the interest of its exploitation in radar's domain, a first characterization has been realized on HBT transistor
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Shishido, Reid Tadashi. "Load-pull measurement and simulation on indium phosphide heterojunction biopolar transistors." Thesis, University of Hawaii at Manoa, 2003. http://hdl.handle.net/10125/6987.
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Indium-phosphide (InP) based amplifiers have recently attracted a great deal of attention due to their superior power and efficiency characteristics for high-performance telecommunications. A state-of-the-art InP heterojunction bipolar transistor was characterized using an automated load-pull measurement system to determine the optimum load conditions for future applications at 10 GHz. These measurements yielded power-added efficiencies ranging from 54-63% for Class A to Class C/E bias conditions. Simulations using a SPICE model confirmed the accuracy of the model at 10 GHz with simulated efficiencies between 44-58%.x, 73 leaves
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Bunz, Bernd. "Entwurfsverfahren von breitbandigen Frequenzvervielfachern für ein multiharmonisches Source- und Load-pull-Messsystem." Kassel : Kassel Univ. Press, 2004. http://deposit.d-nb.de/cgi-bin/dokserv?idn=973052775.
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Gebara, Edward. "Cryogenic on-wafer microwave load-pull power measurements and device performance analysis." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/19601.
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Hashim, Shaiful Jahari. "Wideband active envelope load-pull for robust power amplifier and transistor characterisation." Thesis, Cardiff University, 2010. http://orca.cf.ac.uk/54181/.
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The advent of fourth generation (4G) wireless communication with available modulation bandwidth ranging from 1 MHz to 20 MHz is starting to emerge. The linear modulation technique being employed means that the power amplifiers that support the standards need to have high degree of linearity. By nature, however, all power amplifiers are non-linear. Load-pull measurement system provides anindispensable non-linear tool for the characterization of power amplifier and transistor for linearity enhancement. Conventional passive or active load-pull has delay problem that get worse as the modulation frequency is increased beyond few MHz. Furthermore in order to provide robust non-linear measurement, load-pull system needs to provide bandwidth at least five times the modulation bandwidth by including the fifth-order inter-modulation (IMD5). This thesis presents, for the first time, delay compensation on the unique active envelope load-pull architecture providing constant impedance for bandwidth up to 20 MHz. In doing so, it provides a superior load-pull measurement and also the ability to directly control in-band impedances. Artificial variations imposed on the in-band impedances offer further insight on power amplifier and transistor behaviours under wideband multi-tone stimulus.
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Herceg, Erik. "Výkonový zesilovač pro pásmo 435MHz s vysokou účinností." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316446.
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This diploma thesis is focused on design of high frequency power amplifiers in UHF band, specifically at 435 MHz. Amplifiers are designed in different classes of operation. The thesis deals with the comparison of main parameters in each class of operation, the most important parameter is effeciency. The amplifying part is unipolar transistor which is working in Single-stage mode. The results were simulated in Advanced Design Systems Software.
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Ko, Yus. "Design and optimization of 5GHz CMOS power amplifiers with the differential load-pull techniques." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0013036.
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Bunz, Bernd [Verfasser]. "Entwurfsverfahren von breitbandigen Frequenzvervielfachern für ein multiharmonisches Source- und Load-pull-Messsystem / Bernd Bunz." Kassel : Kassel Univ. Press, 2004. http://d-nb.info/973052775/34.
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Gibrat, Olivier. "Caractérisation expérimentale de transistors de puissance RF : conception d'un banc de mesure multiharmonique source pull et load-pull basé sur la technique six-portes /." Paris : École nationale supérieure des télécommunications, 2002. http://catalogue.bnf.fr/ark:/12148/cb38952229t.
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Wittwer, Benjamin [Verfasser]. "Multiharmonisches Source- und Load-Pull Messsystem zur Charakterisierung aktiver Bauelemente mit WCDMA-Signalen / Benjamin Wittwer." München : Verlag Dr. Hut, 2014. http://d-nb.info/1049362101/34.
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Gibrat, Olivier. "Caractérisation expérimentale de transistors de puissance RF : Conception d'un banc de mesure multiharmonique source pull et load-pull basé sur la technique des six-portes." Paris, ENST, 2002. http://www.theses.fr/2002ENST0005.
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Husseini, Thoalfukar. "On the development and automation of a high-speed load-pull system based on Pxie modules." Thesis, Cardiff University, 2018. http://orca.cf.ac.uk/119018/.
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Recent RF applications and research require thousands of accurate measurements to be performed within a practical time. For instance, the global model extraction of a DUT requires thousands of accurate measurements, which would take a very long time when using the traditional RF measurement systems because they are relatively slow. Moreover, the inaccessible software that is used by the traditional systems has made them a vendor-defined system, where their application cannot be extended or amended. This is contrary to the need for a flexible RF system that can be extended and modified according to user preferences. Furthermore, the traditional load-pull measurement strategies are time-consuming thanks to the iteration process and the need for the user interaction. Therefore, developing a new high-speed measurement is essential. This work demonstrates a high-speed load-pull measurement system that maintains flexibility, accuracy, speed, and high dynamic range. The system's architecture is based on PXIe modules, where the signal Thoalfukar Husseini detection is achieved through the use of vector signal analysers (VSA) that can operate over 50 MHz frequency bandwidth. The RF signal generation employs vector signal generators (VSG) using continuous wave (CW) mode generation. The system is calibratable over a 100 dB dynamic range and the measurement speed approaches 200 measurements/ sec at 10K samples/average. Due to the accessibility of the raw measured data and the customisable written software, statistical information has been employed to monitor the quality of the measurements and the status of the system. Moreover, an automated active load-pull measurement has been implemented on this measurement system. The automated process has been achieved by exploiting the load-based Cardiff behavioural model. This model is used to predict the required injected signals a21 to emulate a load impedance at the DUT reference plane, wherein the results show the ability of the model to achieve a load-target with an error less than -35 dB. The prediction of the DUT's response by the model combined with customised software has allowed for an automated fundamental active load-pull process that requires minimum user interaction to automatically identify the optimum load conditions for the design-relevant parameters (e.g. gain, efficiency or output power over one or multi-power levels) within a few seconds. Two methods have been used to take the impact of the test-set on the generated signal into account: descriptive function and ix Thoalfukar Husseini simple look-up table. These two approaches have been implemented and verified. The results show that each model can achieve the power target with a residual error of less than 0.1 dB. The automation process has not only covered the definition of the optimum impedances over different power levels but has also identified, in a time efficient manner, the appropriate load-pull impedance space. This ensures that the model's coefficients, which are required for predicting the DUT's response b21 and efficiency, are accurately extracted. This approach significantly reduces the number of required measurements, and hence reduces the measurement time when compared to the traditional approach. It takes less than 42 sec to perform 1282 load-pull measurements, that define the appropriate design space (-3dB power contours) for 16 power levels while ensuring that the a- wave based Cardiff behavioural model is simultaneously and accurately extracted. For the sake of an efficient utilization of the measurement system and further reduction in the required number of measurements required to generate a global behavioural model that is compatible for CAD-tool design, a linear interpolation approach over the extracted coefficients was employed and verified. This approach has allowed x Thoalfukar Husseini further reduction in the number of measurements because there is no need to perform the load-pull measurement over a high dense grid of input drive power levels (a11), which is essential for the global model generation.
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Berghoff, Gerald. "Mise en oeuvre d'un banc de caractérisation non linéaire de transistors de puissance à partir de réflectomètres six-portes : application aux mesures source-pull et load-pull multiharmoniques /." Paris : École nationale supérieure des télécommunications, 1998. http://catalogue.bnf.fr/ark:/12148/cb36704894r.
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Bensmida, Souheil. "Conception d'un système de caractérisation fonctionnelle d'amplificateur de puissance en présence de signaux modulés à l'aide de réflectomètres six-portes." Phd thesis, Télécom ParisTech, 2005. http://pastel.archives-ouvertes.fr/pastel-00001368.
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De manière classique, une caractérisation large signal des amplificateurs de puissance s'effectue en présence d'un signal sinusoïdal CW dans le but de fournir aux concepteurs les informations nécessaires permettant un compromis entre puissance de sortie et rendement en puissance ajoutée. Cependant, Dans les systèmes de communications modernes, les amplificateurs de puissance sont soumis à des signaux de plus en plus complexes (modulations numériques) pour lesquels la linéarité est un critère capital supplémentaire pour les performances globales de ces systèmes. Il est donc indispensable de disposer d'outils de caractérisation fonctionnelle permettant de mesurer l'ensemble de ces critères en présence de ces signaux complexes afin de rendre compte au mieux du comportement du dispositif sous test en le plaçant dans ses conditions réelles de fonctionnement. Ce mémoire présente l'étude et la mise en oeuvre d'un banc de caractérisation fonctionnelle de type "load-pull" pour la mesure de l'ensemble des critères de puissance, rendement et linéarité en présence de tous types de signaux (CW, CW-pulsés, GMSK, QPSK, QAM, etc.). L'ENST dispose d'un banc de mesure "source-pull" et "load-pull" multi-harmonique capable d'optimiser la puissance de sortie et le rendement en puissance ajoutée en mode CW. Ce banc est constitué de réflectomètres six-portes, pour la mesure des impédances et des puissances. Afin de permettre l'utilisation de signaux modulés nous avons implémenté des détecteurs de puissance rapides bas coût à base de diodes Schottky non polarisées pour la détection de puissance au niveau des jonctions six-portes. Pour l'optimisation de la linéarité en plus, nous avons ajouté des modules de contrôle des impédances basses fréquences en entrée et en sortie du composant à tester. Un transistor de puissance MESFET a été testé à la fréquence 1.575 GHz en présence d'un signal modulé QPSK de largeur 1.25 MHz et d'un signal bi-porteuses séparées de 800 kHz pour une polarisation de type A et AB. L'ensemble des mesures effectuées permet d'aboutir aux trois principales conclusions montionnées ci-dessous. Premièrement, les contours "load-pull" d'iso-puissances, d'iso-rendement, d'iso-ACPR et d'iso-produits d'intermodulation d'ordre 3 et 5 montrent que les conditions optimales de puissance, de rendement et de linéarité sont différentes d'où la nécessité de trouver des compromis entre les différents critères. D'autre part, ces résultats montrent qu'il existe une forte corrélation entre l'ACPR et le produit d'intermodulation d'ordre 3 en classe A mais pas en classe AB. De toute façon, quel que soit le degré de corrélation, il apparaît difficile de prédire l'ACPR à partir de la connaissance des produits d'intermodulation. Deuxièmement, l'effet des impédances de source BF n'est notable qu'en classe AB dans la zone de saturation. Cet effet se fait sentir uniquement sur la linéarité (variation de 5 dB pour l'ACPR). Finalement, l'effet des impédances de charge BF apparaît quelle que soit la classe de fonctionnement avec évidemment un effet très prononcé pour les classes fortement non-linéaire comme la classe AB pour laquelle on a observé des variations de 5 à 20 dB pour l'ACPR sur toute la dynamique de mesure. Notons que l'impédance optimale n'est pas obligatoirement un court-circuit, et que cette impédance optimale n'est pas toujours l'impédance minimisant la dissymétrie. Par ailleurs, ces impédances ont également une grande influence sur le rendement (variation observée de 10 points) et sur la puissance de sortie (variation de 1 dB).
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Call, John B. "Large-signal characterization and modeling of nonlinear devices using scattering parameters." Thesis, Virginia Tech, 2002. http://hdl.handle.net/10919/35548.
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Characterization and modeling of devices at high drive levels often requires specialized equipment and measurement techniques. Many large-signal devices will never have traditional nonlinear models because model development is expensive and time-consuming. Due to the complexity of the device or the size of the application market, nonlinear modeling efforts may not be cost effective. Scattering parameters, widely used for small-signal passive and active device characterization, have received only cursory consideration for large-signal nonlinear device characterization due to technical and theoretical issues. We review the theory of S-parameters, active device characterization, and previous efforts to use S-parameters with large-signal nonlinear devices.
A robust, calibrated vector-measurement system is used to obtain device scattering parameters as a function of drive level. The unique measurement system architecture allows meaningful scattering parameter measurements of large-signal nonlinear devices, overcoming limitations reported by previous researchers.
A three-port S-parameter device model, with a nonlinear reflection coefficient terminating the third port, can be extracted from scattering parameters measured as a function of drive level. This three-port model provides excellent agreement with device measurements across a wide range of drive conditions. The model is used to simulate load-pull data for various drive levels which are compared to measured data.Master of Science
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Poiré, Philippe. "Mesures load-pull multiharmoniques avec forme d'onde et application à la conception d'amplificateurs micro-ondes en classe F." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0016/NQ48891.pdf.
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Arnaud, Caroline. "Etude et conception d'un système de caractérisation fonctionnelle d'amplificateur de puissance en mode CW pulse." Limoges, 2001. http://www.theses.fr/2001LIMO0015.
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Dans le contexte actuel des microondes, certaines applications, telles que les radars, utilisent des signaux pulsés. L'objectif de ces travaux de thèse a été d'adapter un banc de caractérisation fonctionnelle de type load-pull à la mesure de puissance en mode pulsé. L'outil ainsi élaboré, basé sur l'emploi d'un analyseur de réseaux vectoriel, ainsi que les méhodes d'étalonnage et de mesures ont été validées. La caractérisation au cours d'une impulsion des signaux d'un amplificateur bipolaire Silicium 5W a fait apparaître un déphasage entrée/sortie important ainsi qu'une forte variation de la puissance générée. Afin d'analyser les différentes causes de ces évolutions dans l'impulsion (comportement thermique, conditions d'adaptation en entrée et en sortie), des mesures similaires ont été menées sur un transistor de type HBT. Enfin des simulations sont venues compléter cette analyseNo wadays, microwave applications like radar use pulsed signals. This presented work consists in the implementation of pulsed mode measurement in an existing load-pull functional set-up. The elaborated tool, based on the use of a vector network analyzer, and the calibrated measurement methodologies have been validated
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Jang, Haedong. "NONLINEAR EMBEDDING FOR HIGH EFFICIENCY RF POWER AMPLIFIER DESIGN AND APPLICATION TO GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1406269587.
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Casbon, Michael Anthony. "Design and application of an advanced fully active harmonic load pull system using pulsed RF measurements and synchronised laser energy." Thesis, Cardiff University, 2018. http://orca.cf.ac.uk/115731/.
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The objective of this work was to advance the design of Active Harmonic Load-Pull systems to facilitate accurate modelling of RF semiconductors, with specific regard to time dependant behaviours. Pulse capability is added, to extend the thermally safe operating region, investigate thermal behaviour, and reduce the thermal loading on the system components. The safe operation region extension is demonstrated with a GaAs die, the thermal aspects of behaviour are illustrated with GaN on SiC, GaN on Si and GaN on diamond die. A violet laser is added, which releases some types of trapped charge, helping to reveal the full potential of the device. The thermal transient response of the device is thereby exposed, and the trap filling times may be studied. The application of this to GaN die with and without Source Coupled Field Plates is described. The relevance of the light wavelength is briefly investigated. A novel wafer probe station is described, providing access to the backside of the wafer for photonic trap release and the measurement of hot electron electroluminescence, as RF measurements are conducted on the front side. Replacing the drain RF and DC circuits with a fixed resistor, and stepping the gate voltage allows the device to be held at any point on the load-line and then moved to another, here this demonstrates that the residual “knee-walkout” on a GaN on SiC part with an optimised source coupled field plate is not a thermal effect, and must therefore be due to trapped charge, despite the field plate. A low loss diplexer/ bias tee combination with very good DC supply memory properties is described, demonstrated with a InAlN/GaN die at Ka band. Accurate measurement of harmonics is vital to waveform engineering. Here a novel method of increasing the effective dynamic range of the system is presented.
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Varanasi, Ravi Kumar. "Linearity optimization of power transistors utilizing harmonic terminations." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000563.
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Bengtsson, Olof. "Design and Characterization of RF-Power LDMOS Transistors." Doctoral thesis, Uppsala : University Library, Universitetsbiblioteket, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-9259.
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Yuvaraj, Vasanth Raj, and Sifei Zhang. "Reducing WIP Inventory of Production Line in AQ Segerström & Svensson AB." Thesis, Mälardalens högskola, Akademin för innovation, design och teknik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:mdh:diva-19202.
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The major objective of present study is to find out the sources which cause higher Work in Process (WIP) in the production line. In which a detailed analysis is performed in the area of inventory, reorder point, Takt time, and Kanban. All the analyses are based on the data obtained from the company’s ERP system and have been used to run some scenarios during the analysis.Lots of problems are responsible to cause higher WIP. But current report only focuses and concentrates in leveling the work load, implementing pull system, suggesting reorder point and Takt time.The current situation is described through Value-stream Map (VSM) and the impact cost matrix is used to show the impact of each problem in the production line in terms of costs. In the analysis chapter, root cause method has been used in order to show the cause and effect of higher WIP. Detailed analyses together with explanations are listed by orders. Therefore, three major suggestions are proposed and the future VSM is plotted to show the effect and change of the suggestions which helps to improve the current situation by eliminating the waste.
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Deshours, Frédérique. "Mise en œuvre d'un système de mesure load-pull à partir d'un analyseur de réseaux à six-portes pour la caractérisation expérimentale des transistors de puissance." Paris 6, 1996. http://www.theses.fr/1996PA066118.
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Les systèmes de communication deviennent de plus en plus complexes et doivent répondre à des critères bien précis (taille, poids, consommation). Leur conception passe inéluctablement par une phase d'optimisation de leurs différentes fonctions électroniques. Pour répondre à ce besoin de conception optimale, des logiciels de simulation numérique non linéaire (touchstone, mds) ont été développés et commercialisés. Cependant, la validité des résultats obtenus par la simulation repose, en grande partie, sur la qualité des modèles électriques non linéaires des composants introduits dans les simulateurs. Aussi, parallèlement à ces travaux d'optimisation par simulation, il est nécessaire de développer des systèmes de mesure, soit pour valider les modèles déjà existants, soit, pour connaitre de manière expérimentale le comportement du composant en régime non linéaire. De tels systèmes réalisent une simulation expérimentale des conditions d'excitation, susceptibles d'être imposées aux composants actifs dans les circuits micro-ondes de puissance. Cette technique, connue sous le nom de méthode load-pull consiste à présenter au dispositif différentes impédances de fermeture et à mesurer son comportement en puissance, pour une fréquence et un point de polarisation donnés. C'est dans ce cadre que s'inscrivent les travaux de cette thèse. Les systèmes de mesure load-pull qui utilisent des adaptateurs mécaniques (tuners) présentent certaines limitations liées aux pertes intrinsèques des tuners. Il n'est donc pas possible de synthétiser des charges à fort facteur de réflexion et de déterminer les impédances d'entrée des transistors fortement désadaptés. D'autre part, il est difficile de contrôler les impédances de charge présentées au dispositif aux fréquences harmoniques. Les systèmes de type load-pull actif nécessitent l'utilisation d'un analyseur de réseaux vectoriel hétérodyne a quatre entrées et d'un wattmètre associé à un coupleur directif pour mesurer les différents rapports d'onde et les niveaux de puissance incidente. Le double réflectomètre à six-portes est particulièrement bien adapté à ce type de caractérisation, car contrairement aux systèmes hétérodynes commercialisés, les jonctions six-portes déterminent directement, à la fréquence de travail, les rapports d'onde aux accès de mesure, et ce à partir de mesures de puissance. Il est d'autre part possible de déterminer les puissances incidentes aux accès de mesure sans utiliser de wattmètre et de coupleur. Ce mémoire présente un système de mesure load-pull pour caractériser expérimentalement les composants actifs non linéaires. Ce système permet de s'affranchir de toutes les difficultés précédentes en associant la méthode de la charge active à un analyseur de réseaux à six-portes large-bande (1-18 GHz). Il apporte des solutions attractives aux problèmes rencontrés. Les résultats obtenus permettent de concevoir, de façon optimale, les circuits micro-ondes non linéaires (amplificateurs, oscillateurs) et de valider ou d'améliorer les modèles des transistors utilisés dans les logiciels de simulation.
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Deshours, Frédérique. "Mise en oeuvre d'un système de mesure Load-Pull à partir d'un analyseur de réseaux à six-portes pour la caractérisation expérimentale des transistors de puissance /." Paris : École nationale supérieure des télécommunications, 1996. http://catalogue.bnf.fr/ark:/12148/cb358277114.
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Gillet, Vincent. "Développement d'un banc de load-pull actif innovant, utilisant un signal multi-tons large bande pour la mesure de la linéarité (EVM, NPR, ACPR) des dispositifs actifs." Thesis, Limoges, 2019. http://www.theses.fr/2019LIMO0114.
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Cette thèse présente l’utilisation innovante du signal Unequally Spaced Multi-Tones (USMT) dans la mesure de linéarité des transmetteurs de télécommunications (5G). Ce signal offre une nouvelle perspective permettant la caractérisation des formes d’ondes réelles en utilisant un signal avec un nombre de tons très réduit, se comportant comme une extension de la caractérisation 2-tons. Ce signal est simple à mettre en oeuvre, à mesurer et à analyser. Il nécessite des moyens peu onéreux, (générateur de signaux arbitraires, analyseur de spectre). Il peut s’utiliser à différent niveau de l’industrie : de la fabrication (wafer) jusqu’à la ligne de production, en passant par les transistors packagés. Cette thèse a démontré la faisabilité d’un banc automatique de mesures multi-tons, utilisant ce signal USMT, pour la caractérisation load-pull (passif et actif ) de transmetteurs de télécommunications. La maîtrise de cette technique de mesure des non-linéarités représente un avantage concurrentiel à tous les niveaux de la conception du front-end radio fréquence et un gain financier indéniableThis manuscript describes an innovative use of the Unequally Spaced Multi-Tones test signal to achieve linearity characterization of telecommunication transmitter (5G). This signal offers new perspectives of characterization using real waveform involving a reduce number of tone test signal, which in turn behaves as an extension of the 2- tone characterization. This innovative test signal is easy to generate, to measure and to analyze. It required not particular expensive hardware to be generated (arbitrary waveform generator, spectrum analyzer). It is particularly interesting for production line testing, from on-wafer measurements up to radiofrequency front-end, passing through packaged transistor. This thesis demonstrated the feasability of automation of multitone measurement, using this particular USMT signal, for load-pull measurement (passive and active) of telecommunications transmitters. Managing this measurement technics represents a competitive advantage at all levels of the radio frequency front-end design and an undeniable financial gain
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Danilovic, Milisav. "Active Source Management to Maintain High Efficiency in Resonant Conversion over Wide Load Range." Diss., Virginia Tech, 2015. http://hdl.handle.net/10919/76618.
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High-frequency and large amplitude current is a driving requirement for applications such as induction heating, wireless power transfer, power amplifier for magnetic resonant imaging, electronic ballasts, and ozone generators. Voltage-fed resonant inverters are normally employed, however, current-fed (CF) resonant inverters are a competitive alternative when the quality factor of the load is significantly high. The input current of a CF resonant inverter is considerably smaller than the output current, which benefits efficiency. A simple, parallel resonant tank is sufficient to create a high-power sinusoidal signal at the output. Additionally, input current is limited at the no-load condition, providing safe operation of the system. Drawbacks of the CF resonant inverter are associated with the implementation of the equivalent current source. A large input inductor is required to create an equivalent dc current source, to reduce power density and the bandwidth of the system. For safety, a switching stage is implemented using bidirectional voltage-blocking switches, which consist of a series connection of a diode and a transistor. The series diode experiences significant conduction loss because of large on-state voltage. The control of the output current amplitude for constant-frequency inverters requires a pre-regulation stage, typically implemented as a cascaded hard-switched dc/dc buck converter. The pre-regulation also reduces the efficiency.
In this dissertation, a variety of CF resonant inverters with two input inductors and two grounded switches are investigated for an inductive-load driver with loaded quality factor larger than ten, constant and high-frequency (~500 kHz) operation, high reactive output power (~14 kVA), high bandwidth (~100 kHz), and high efficiency (over 95 %). The implementation of such system required to question the fundamental operation of the CF resonant inverter. The input inductance is reduced by around an order of magnitude, ensuring sufficient bandwidth, and allowing rich harmonic content in the input current. Of particular importance are fundamental and second harmonic components since they influence synchronization of the zero-crossing of the output voltage and the turn-on of the switches. The synchronization occurs at a particular frequency, termed synchronous frequency, and it allows for zero switching loss in the switches, which greatly boosts efficiency. The synchronous conditions were not know prior this work, and the dependence among circuit parameters, input current harmonics, and synchronous frequency are derived for the first time. The series diode of the bidirectional switch can reduce the efficiency of the system to below 90 %, and has to be removed from the system. The detrimental current-spikes can occur if the inverter is not operated in synchronous condition, such as in transients, or during parametric variations of the load coil. The resistance of the load coil has a wide variance, five times or more, while the inductance changes as well by a few percent. To accommodate for non-synchronous conditions, a low-loss current snubber is proposed as a safety measure to replace lossy diodes. The center-piece of the dissertation is the proposal of a two-phase zero-voltage switching buck pre-regulator, as it enables fixed frequency and synchronous operation of the inverter under wide parametric variations of the load. The synchronous operation is controlled by phase-shifting the switching functions of the pre-regulator and inverter. The pre-regulator reduces the dc current in the input inductors, which is a main contributor to current stress and conduction losses in the inverter switches. Total loss of the inverter switches is minimized since no switching loss is present and minimal conduction losses are allowed. The dc current in the input inductors, once seen as a means to transfer power to load, is now contradictory perceived as parasitic, and the power is transferred to the load using a fundamental frequency harmonic! The input current to the resonant tank, previously designed to be a square-wave, now resembles a sine-wave with very rich harmonic content. Additionally, the efficiency of the pre-regulator at heavy-load condition is improved by ensuring ZVS for with an additional inductive tank.
The dissertation includes five chapters. The first chapter is an introduction to current-fed resonant inverters, applications, and state-of-the-art means to ensure constant frequency operation under load's parametric variations. The second chapter is dedicated to the optimization of the CF resonant inverter topology with a dc input voltage, two input inductors, and two MOSFETs. The topology is termed as a boost amplifier. If the amplifier operates away from the synchronous frequency, detrimental current spikes will flow though the switches since the series diodes are eliminated. Current spikes reduce the efficiency up to few percent and can create false functioning of the system. Operation at the synchronous frequency is achieved with large, bulky, input inductors, typically around 1-2 mH or higher, when the synchronous frequency follows the resonant frequency of the tank at 500 kHz. The input inductance cannot be reduced arbitrarily to meet the system bandwidth requirement, since the synchronous frequency is increased based on the inductance value. The relationship between the two (input inductance and the synchronous frequency) was unknown prior this work. The synchronous frequency is determined to be a complicated mathematical function of harmonic currents through the input inductors, and it is found using the harmonic decomposition method. As a safety feature, a current snubber is implemented in series with the resonant tank. Snubber utilizes a series inductance of cable connection between the tank and the switching stage, and it is more efficient than the previously employed series diodes. Topology optimization and detailed design procedure are provided with respect to efficiency and system dynamics. The mathematics is verified by a prototype rated at 14 kVA and 1.25 kW. The input inductance is reduced by around an order of magnitude, with the synchronous frequency increase of 2 %. The efficiency of the power amplifier reached 98.5 % and might be improved further with additional optimization. Silicon carbide MOSFETs are employed for their capability to operate efficiently at high frequency, and high temperature.
The third chapter is dedicated to the development of the boost amplifier's large signal model using the Generalized State-space Averaging (GSSA) method. The model accurately predicts amplifier's transient and steady-state operation for any type of input voltage source (dc, dc with sinusoidal ripple, pulse-width modulated), and for either synchronous or non-synchronous operating frequency. It overcomes the limitation of the low-frequency model, which works well only for dc voltage-source input and at synchronous frequency. As the measure of accuracy, the zero-crossing of the resonant voltage is predicted with an error less than 2° over a period of synchronous operation, and for a range of interest for input inductance (25 μH – 1000 μH) and loaded-quality factor (10 – 50). The model is validated both in simulation and hardware for start-up transient and steady-state operation. It is then used in the synthesis of modulated output waveforms, including Hann-function and trapezoidal-function envelopes of the output voltage/current.
In the fourth chapter, the GSSA model is employed in development of the PWM compensation method that ensures synchronous operation at constant frequency for the wide variation of the load. The boost amplifier is extended with a cascaded pre-regulator whose main purpose is to control the output resonant voltage. The pre-regulator is implemented as two switching half-bridges with same duty-cycle and phase-shift of 180°. The behavior of the cascaded structure is the same as of the buck converter, so the half-bridges are named buck pre-regulators. ZVS operation is ensured by putting an inductive tank between the half-bridges. Each output of half-bridges is connected to each of input inductors of the boost to provide the PWM excitation. Using the GSSA model, the synchronous condition and control laws are derived for the amplifier. Properties of the current harmonics in the input inductors are well examined. It is discovered that the dc harmonic, once used to transfer power, is unwanted (parasitic) since it increases conduction loss in switches of the boost. A better idea is to use the fundamental harmonic for power transfer, since it does not create loss in the switches. Complete elimination of the dc current is not feasible for constant frequency operation of the amplifier since the dc current depends on the load coil's resistance. However, significant mitigation of around 55 % is easily achievable. The proposed method improves significantly the efficiency of both the buck pre-regulator and the boost. Synchronous operation is demonstrated in hardware for fixed switching frequency of 480 kHz, power level up to 750 W, input voltage change from 300 V to 600 V, load coil's resistance change of three times, and load coil's inductance change of 3.5 %. Measured efficiency is around 95 %, with a great room for improvements. Chapter five summarizes key contributions and concludes the dissertation.Ph. D.
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Kashif, Ahsan-Ullah. "Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-61599.
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The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. From economical point of view, a single wideband RF power module is more desirable rather than multiple narrowband PAs especially for multi-band and multi-mode operation. Therefore, device modeling has now become much more crucial for such applications. In order to reduce the device design cycle time, the researchers also heavily rely on computer aided design (CAD) tools. With improvement in CAD technology the model extraction has become more accurate and device physical structure optimization can be carried out with less number of iterations. LDMOS devices have been dominating in the communication field since last decade and are still widely used for PA design and development. This thesis deals with the optimization of RFLDMOS transistor and its evaluation in different PA classes, such as linear, switching, wideband and multi-band applications. For accurate evaluation of RF-LDMOS transistor parameters, some techniques are also developed in technology CAD (TCAD) using large signal time domain computational load-pull (CLP) methods. Initially the RF-LDMOS is studied in TCAD for the improved RF performance. The physical intrinsic structure of RF-LDMOS is provided by Infenion Technologies AG. A reduced surface field (RESURF) of low-doped drain (LDD) region is considered in detail because it plays an important role in RF-LDMOS devices to obtain high breakdown voltage (BVDS). But on the other hand, it also reduces the RF performance due to high on-resistance (Ron). The excess interface state charges at the RESURF region are introduced to reduce the Ron, which not only increases the dc drain current, but also improve the RF performance in terms of power, gain and efficiency. The important achievement is the enhancement in operating frequency up to 4 GHz. In LDD region, the effect of excess interface charges at the RESURF is also compared with dual implanted-layer of p-type and n-type. The comparison revealed that the former provides 43 % reduction in Ron with BVDS of 70 V, while the later provides 26 % reduction in Ron together with BVDS of 64 - 68 V. In the second part of my research work, computational load pull (CLP) simulation technique is used in TCAD to extract the impedances of RF-LDMOS at different frequencies under large signal operation. Flexible matching is an issue in the design of broadband or multi-band PAs. Optimum impedance of RF-LDMOS is extracted at operating frequencies of 1, 2 and 2.5 GHz in class AB PA. After this, CLP simulation technique is further developed in TCAD to study the non-linear behavior of RF devices. Through modified CLP technique, non-linear effects inside the transistor structure are studied by conventional two-tone RF signals in time domain. This is helpful to detect and understand the phenomena, which can be resolved to improve the device performance. The third order inter-modulation distortion (IMD3) of RF- LDMOS was observed at different power levels. The IMD3 of −22 dBc is obtained at 1-dB compression point (P1-dB), while at 10 dB back off the value increases to −36 dBc. These results were also verified experimentally by fabricating a linear PA. Similarly, CLP technique is developed further for the analysis of RF devices in high efficiency operation by investigating the odd harmonic effects for the design of class-F PA. RF-LDMOS can provide a power added efficiency (PAE) of 81.2 % in class-F PA at 1 GHz in TCAD simulations. The results are verified by design and fabrication of class-F PA using large signal model of the similar device in ADS. In fabrication, a PAE of 76 % is achieved.
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Demenitroux, Wilfried. "Caractérisation avancée et nouvelles méthodologies de modélisation des technologies GaN pour la conception d’amplificateurs de puissance large bande et haut rendement aux fréquences RF et microondes." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/bd67ae36-c41e-48b1-a795-cee1579821d7/blobholder:0/2011LIMO4040.pdf.
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Haut rendement, forte linéarité et large bande de fonctionnement sont les points clés de la conception d’amplificateur de puissance d’aujourd’hui. De plus, de nombreux amplificateurs de puissance sont développés en technologie hybride utilisant des transistors en boîtier, rajoutant une difficulté supplémentaire pour extraire des modèles CAO fiables pour concevoir ces amplificateurs. Le sujet de cette thèse est de proposer une nouvelle méthodologie de modélisation de transistors en boîtier, rapide, automatique et dédiée à la conception d’amplificateurs de puissance large bande et haut rendement. Pour cela, un nouveau modèle comportemental de transistor est proposé, avec une méthode innovante d’extraction. Pour valider le nouveau flot de conception basé sur des modèles comportementaux de transistors, l’étude aboutit à un démonstrateur en technologie GaN présentant un rendement en puissance ajoutée moyen de 65%, une puissance de sortie moyenne de 41 dBm et un gain en puissance moyen de 13 dB sur 36% de bande relative autour de 2. 2 GHzHighly efficient, high linearity and wideband are the keyword of the new power amplifier in telecom nowadays. Thus, more and more power amplifiers are developed using packaged transistor, adding a difficulty to extract reliable CAD models for designing these amplifiers. The topic of this thesis is to propose a new methodology for modeling packaged transistor, fast, accurate automatic and dedicated to the design of wideband and highly efficient power amplifiers. A new behavioral model of packaged transistor is proposed, using an innovative method of extraction. In order to validate the new design flow approach, the study results in a GaN wideband and highly efficient power amplifier presenting a mean PAE of 65%, a mean output power of 41 dBm and a mean power gain of de 13 dB over 36% of relative bandwidth around 2. 2 GHz
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Bossuet, Alice. "Intégration sur silicium de solutions complètes de caractérisation en puissance de transistor HBT en technologie BiCMOS 55 nm à des fréquences au-delà de 130 GHz." Thesis, Lille 1, 2017. http://www.theses.fr/2017LIL10038/document.
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L’évolution des technologies silicium rend aujourd’hui possible le développement de nombreuses applications dans les domaines millimétriques tels que pour les systèmes de communication à très haut débit. Cette évolution se caractérise par une croissance des performances en fréquence des transistors disponibles dans ces technologies et nécessite la mise en place d’outils de mesure performants pour valider la modélisation et l’optimisation technologique de ces dispositifs. La caractérisation load-pull est une méthode incontournable pour modéliser le comportement en fort signal des transistors. En bande G [140-220 GHz], l’environnement de mesure classiquement disponible n’a plus les performances requises pour ce type de caractérisation compte tenu des pertes dans les accès au dispositif sous test. Ce travail de thèse a pour objectif de lever ce verrou en proposant de réaliser, en technologie BiCMOS 55 nm de STMicroelectronics, un banc load-pull entièrement intégré sur silicium afin d’être au plus près du dispositif à caractériser. Le mémoire est articulé autour de quatre chapitres. Le premier chapitre présente l’état de l’art de l’instrumentation actuellement disponible pour la caractérisation en puissance aux fréquences millimétriques et leurs limitations. Le second chapitre détaille la conception et la caractérisation des blocs constituant le banc intégré : le tuner et la source MMW de puissance. Le troisième chapitre décrit la réalisation et les performances du détecteur de puissance. Enfin, le quatrième chapitre présente le banc complet et son application à la caractérisation en bande G d’un dispositif bipolaire disponible dans la technologie BiCMOS 55 nmThe evolution of silicon technologies now makes possible the development of many applications in the millimeter areas such as high speed communication systems. The evolution of these silicon technologies is characterized by the increase of the transistor performances with the frequency that requires the development of efficient radiofrequency measurement tools for accurate modeling of active components or the optimization of integrated circuits. In this framework, the load-pull characterization is an essential method to model the behavior of transistors in nonlinear region. In the G Band, the classical measurement environment typically available has not the required performance for this kind of characterization due to the losses in the accesses to the device under test. The aim of this thesis is to lift this lock by offering, in the STMicroelectronics BiCMOS 55 nm technology, a fully integrated load-pull characterization bench on silicon in order to be as close as possible to the device to characterize. The thesis manuscript is divided into four chapters. The first chapter presents the state of the art of the currently available instrumentation for power characterization at millimeter wave frequencies band and their limitations, which leads to the G band characterization bench specifications. The second chapter details the design and characterization of the mains blocks constituting the integrated bench: the tuner and the mmw power source. The third chapter present the design and characterization of the power detector. Finally, the fourth chapter presents the complete bench and its application with the G band load-pull characterization of a transistor bipolar device
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Acimovic, Igor. "Contributions to the Design of RF Power Amplifiers." Thesis, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24406.
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In this thesis we introduce a two-way Doherty amplifier architecture with multiple feedbacks for digital predistortion based on impedance-inverting directional coupler (transcoupler). The tunable two-way Doherty amplifier with a tuned circulator-based impedance inverter is presented. Compact N-way Doherty architectures that subsume impedance inverter and offset line functionality into output matching networks are derived. Comprehensive N-way Doherty amplifier design and analysis techniques based on load-pull characterization of active devices and impedance modulation effects are developed. These techniques were then applied to the design of a two-way Doherty amplifier and a three-way Doherty amplifier which were manufactured and their performance measured and compared to the amplifier performance specifications and simulated results.
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Tapfuh, Mouafo Joseph. "Etude d'amplificateurs faible niveau à haute linéarité en technologies intégrées HEMT AsGa pour applications spatiales." Limoges, 2008. https://aurore.unilim.fr/theses/nxfile/default/82c545c3-edac-49d5-a891-3f4fbc7ceba0/blobholder:0/2008LIMO4056.pdf.
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Dans ce mémoire, nous examinons en détail les différentes méthodes d'évaluation de la linéarité dans les amplificateurs. Une analyse mathématique par séries de Volterra, basée sur le schéma équivalent d'un transistor HEMT nous a permis de dégager les différents paramètres qui influencent la linéarité d'un amplificateur faible niveau, notamment, son point de polarisation et ses impédances de charge. Ainsi, l'optimisation de la linéarité ne passe plus par l'optimisation du P1dB comme dans le cas des amplificateurs de puissance, mais sur l'optimisation de la charge des transistors du dernier étage à partir des données issues d'une mesure load-pull bi-porteuse visant à maximiser directement le C/I3 pour une puissance de fonctionnement nominale. Cette approche permet de palier à l'absence de modèle non-linéaire fiable pour prédire l'intermodulation à bas niveau de puissance de fonctionnement et d'optimiser la linéarité à partir d'une simple simulation linéaire robuste, fiable et rapideThis work presents an analysis of low-level and high linearity amplifier circuits, and proposes solutions in order to optimise the ratio between high linearity and low consumption (IP3/Pdc). Different methods to evaluate linearity in amplifier has been studied. Mathematical analysis with Volterra series based on equivalent circuit of HEMT transistor allows us to highlight different parameters influencing linearity in low amplifier, in particular, bias point and load impedances. Hence, linearity optimisation does not involve optimisation of output power at 1 dB gain compression, as for high power amplifier, but optimisation of load of transistor for the last stage, using data from 2 tones load-pull measurement, in order to maximise the C/I3 ratio for a given output power. This approach allow us to bypass the lack of reliable non-linear model of transistor for an accurate IM3 prediction, and help to optimise the linearity using a simple, fast and robust linear simulation
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Inácio, Ana Inês Silva. "Linearizing an L-band power amplifier for RADAR applications." Master's thesis, Universidade de Aveiro, 2013. http://hdl.handle.net/10773/13410.
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Mestrado em Engenharia Eletrónica e TelecomunicaçõesThis thesis attempts to improve the linearity, while keeping the efficiency, of a given power amplifier to be used in RADAR applications. The thesis is divided in three major parts: first, the theoretical analysis around the chosen linearization technique is done by mathematical deduc-tion and MATLAB simulations. In second place, ADS simulations with low-frequency dithering applied to an amplifier model, provided by the man¬ufacturer of the amplifier, are performed. The desired characteristics found during simulations will be used on the design of the prototype. Then, using the designed prototype, measurements to compare with the previous simulations, will be done. To prove the concept idea, small and large signal, for a single-tone, and two-tone measurements, with and without dithering, will be performed. The improvement of the intermodulation distortion products using a dithered amplifier will be shown demonstrating actual linearity enhancement.
Esta dissertação de Mestrado têm como principal objectivo aumentar a linearidade de um determinado amplificador de potência, mantendo a sua eficiência. Primeiramente, depois de escolhida a técnica a implementar (dither de baixa frequência (LFD)), vai ser feita uma análise com base numa dedução matemática seguida de simulações em MATLAB, para provar a sua eficácia. Simulações usando o modelo do amplificador (fornecido pelo fabricante) e a técnica de LFD vão ser feitas onde as condições necessárias à implementação do dither vão ser extraídas para, posteriormente serem usadas na construção de um prótotipo. Depois do design do prótotipo ser finalizado, e da placa completa ter sido produzida, os resultados das medições, vão ser comparados com as simulações. Medidas de sinal fraco e sinal forte, bem como medidas da distorção de intermodulação vão ser apresentadas e analisadas. No final, as medições anteriores vão ser utilizadas para comprovar a validade da técnica escolhida na linearização do amplificador para ser usado em aplicações de RADAR.
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Amairi, Amor. "Caractérisation en petit signal, en puissance et en impédances des transistors à effet de champ millimétriques : étude et réalisation d'un banc de "load-pull à charge active" 26,5-40 GHz." Lille 1, 1991. http://www.theses.fr/1991LIL10090.
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Le développement technologique du transistor à effet de champ à grille submicronique, l'évolution croissante de sa montée en fréquence et ses capacités actuelles en puissance nécessitent de mettre en œuvre des méthodes de caractérisation adéquates. Ce travail concerne d'une part, la réalisation, entre 45 MHz et 40 GHz, des mesures de paramètres S petit signal des transistors à effet de champ et d'autre part, la réalisation des mesures de leurs performances optimales en puissance et en impédances dans la bande 26,5-40 GHz. Dans la première partie, nous développons la méthode de mesure des paramètres S à l'analyseur de réseau HP 8510 des transistors à effet de champ millimétriques jusqu'à 40 GHz et nous déterminons leurs performances potentielles petit signal ainsi que leurs schémas équivalents optimums. Dans la deuxième partie, nous développons pour ces transistors, en premier lieu, les mesures de puissance au banc classique et en second lieu, les mesures de puissance et d'impédance de charge au banc «load-pull à charge active» dans la bande 26,5-40 GHz. Parallèlement, nous étudions les problèmes posés par la réalisation de ces bancs de mesure. Des comparaisons sont effectuées en permanence entre les résultats obtenus par les trois systèmes de mesure: analyseur de réseau, banc classique et banc «load-pull à charge active». Cette étude nous a amené à définir les conditions permettant des mesures précises et «in situ» des performances en puissance du transistor dans la bande 26,5-40 GHz et à envisager, pour un développement ultérieur le couplage du banc «load-pull à charge active» avec un analyseur de réseau performant du type HP 8510 (ou Wiltron 360) assisté par une méthode d'étalonnage automatique équivalente à la méthode TRL
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Beckrich-Ros, Hélène. "Contribution à la caractérisation et à la modélisation de transistors bipolaires de puissance intégrés dans une filière BiCMOS submicronique." Bordeaux 1, 2006. http://www.theses.fr/2006BOR13260.
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L’émergence de la troisième génération de téléphone portable a fait évoluer les usages. Les utilisateurs peuvent désormais bénéficier d’un accès haut débit à l’Internet sans fil ce qui a rendu les services de communication multimedia: visiophonie, MMS, réception de programmes télévisés. . . Cette diversification du mode d’utilisation d’un portable a fait des amplificateurs de puissance des éléments prépondérants pour la transmission de l’information. C’est pourquoi cette étude propose une contribution à la caractérisation et à la modélisation de transistor de puissance RF intégrés dans une filière submicronique. Dans ce cadre d’application, il est important de tenir compte de l’influence de la température sur la réponse électrique d’un transistor bipolaire; cet effet est d’autant plus marqué pour les applications de puissance au regard des densités de courant mises en jeu. C’est pourquoi, une analyse des lois en température des paramètres du modèle compact HICUM/L2 est présentée, ainsi que les méthodes d’extraction associées. Puis, les phénomènes d’auto-échauffement et de couplage thermique dans les transistors de puissance sont étudiés à l’aide de simulations physiques et de caractérisations électriques pour mettre au point un modèle nodal SPICE. Finalement, les transistors de puissance sont caractérisés à l’aide de mesure load-pull en appliquant un signal à deux tons sur leur base. Ces caractéristiques sont comparées à des simulations Harmonic Balance de manière à valider le comportement grand signal du modèle HICUM/L2 et sa capacité à modéliser les phénomènes d’intermodulations fréquentielles.
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Silva, João Lucas Rodrigues. "Amplificador RF de potência outphasing-chireix." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/17215.
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Mestrado em Engenharia Electrónica e TelecomunicaçõesEsta dissertação tem como objetivo estudar e implementar um amplificador de potência de Rádio Frequência utilizando o conceito de Out-phasing, proposto por H. Chireix em 1935, mas que nos recentes anos tem vindo a ser objeto de estudo intensivo, não só ao nível académico, mas também pelos grandes fabricantes de amplificadores de potência de Rádio Frequência. Assim, este trabalho foi desenvolvido com o objetivo de seguir as tendências de mercado e detetar os principais problemas relacionados com a sua implementação, para mais tarde, ser capaz de apresentar algo de relevante ao mercado e de acordo com as suas necessidades. Deste modo, implementou-se um sistema Out-phasing com um Combinador Chireix a uma frequência de 1.8 GHz, apresentando uma eficiência máxima de 60% e uma eficiência de 40% a 10dB da potência máxima quando em operação em onda contínua. Este amplificador de potência foi projetado com dois amplificadores diferentes a operar em class E, combinando o conceito de Outphasing com modulação em amplitude, com vista a melhorar a sua eficiência total e linearidade.
The objective of this dissertation is to study and implement a RF Power Amplifier using the Outphasing concept, which was proposed by H. Chireix in 1935 but, in the recent years, has been the subject of intensive research, not only at the academic level, but also by the big manufacturers of Radio Frequency Power Amplifiers. Thus, this work was developed to follow market tendencies and detect the most significant problems related with its implementation to, later on, be capable to present something interesting to the market, according to its requirements. So, an Outphasing Amplifier using a Chireix Combiner for 1.8 GHz was implemented, presenting a peak Power added efficiency of around 60% and almost 40% at 10 dB of Output power back off in Continuous wave. This Power Amplifier was designed with two different class E amplifiers, mixing also the concept of Outphasing with Amplitude modulation, in order to increase its efficiency and to linearize it at the same time.
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Romier, Maxime. "Simulation électromagnétique des antennes actives en régime non-linéaire." Phd thesis, Toulouse, INPT, 2008. http://oatao.univ-toulouse.fr/7824/1/romier.pdf.
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Les antennes réseaux actives en cours de développement ont pour particularité de posséder, à l'émission, des amplificateurs en régime saturé placés à proximité immédiate des éléments rayonnants. Les couplages du réseau peuvent induire des variations de charge susceptibles de perturber les amplificateurs et de modifier les performances globales de l'antenne. Afin de prédire cet effet, un outil de simulation associant la description des éléments passifs et actifs de l'antenne a été développé. Plusieurs modèles d'amplificateurs, dont le modèle de distorsion polyharmonique (PHD), ont été obtenus à partir de mesures et évalués. D'autre part, le calcul électromagnétique du réseau d'éléments rayonnants a fait l'objet d'une approche originale couplant la technique par changement d'échelle (SCT) et la méthode de décomposition de domaine (DDM). Finalement, la simulation d'un réseau actif d'une centaine éléments a révélé des phénomènes inédits tels que le rayonnement d'un lobe parasite dû aux non-linéarités.
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Gasseling, Tony. "Caractérisation non linéaire avancée de transistors de puissance pour la validation de leur modèle CAO." Limoges, 2003. http://www.theses.fr/2003LIMO0041.
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Le travail présenté dans ce mémoire propose une contribution à la conception optimisée d'amplificateurs de puissance par l'utilisation de plusieurs caractérisations fonctionnelles. Celles ci sont réalisées aux premiers stades de la conception, au niveau du transistor en environnement source et load pull. Il est ainsi montré qu'un banc load pull fonctionnant en mode pulsé permet de participer à la validation des technologies utilisées pour la génération de fortes puissances aux fréquences microondes (Bande S). Cette étape permet également de valider fortement les modèles non linéaires électrothermiques des transistors développés à cet effet. Dans le domaine millimétrique, l'amplification de puissance sous contrainte de rendement et de linéarité est à l'heure actuelle un des points critiques du fait des faibles réserves de gain proposées. Dans ce contexte, le développement d'un banc source et load pull actif fonctionnant en bande K et permettant de déterminer les conditions optimales de polarisation et d'adaptation pour l'obtention du meilleur compromis rendement/linéarité se révèle être de première importance pour la conception optimisée d'amplificateur. Enfin, une nouvelle technique de caractérisation dédiée à l'extraction des quatre paramètres S à chaud en environnement load pull est proposée. Une application de cette nouvelle caractérisation a ainsi permis de prédire les oscillations paramétriques hors bande pouvant apparaître en fonction des conditions opératoires lorsque le transistor fonctionne en régime fort signalAdvanced functional characterizations of power transistors for the validation of nonlinear models of SC devices used in CAD packages. This work deals with different functional characterization methods for the design of optimized power amplifiers. These characterizations are carried out on transistors at the first stages of the design, in a source and load-pull environment. Thus, it is shown that a pulsed load-pull set up is very useful to validate the technologies used for the generation of high power at RF and microwave frequencies. It also enables to deeply validate the thermoelectric nonlinear models of transistors developed for this purpose. For the design of amplifiers which operate up to millimetric frequencies (Ku / K Band), reaching high power under constraint of efficiency and linearity is one of the most critical point because of the weak reserves of power gain proposed. In this context, the development of an active source and load-pull setup is of prime importance. It enables to primarily determine the transistor optimum operating conditions (Matching and DC bias) to reach the best trade off between efficiency and linearity. Finally, a new method to perform Hot Small-Signal S-Parameter measurements of power transistors operating under large signal conditions is proposed. An application to the prediction of parametric oscillations when the transistor is driven by a pump signal is demonstrated
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Blanchet, Floria. "Analyse et caractérisation des performances en puissance de transistors bipolaires à hétéro-jonction SiGe:C pour des applications de radiocommunications portables." Limoges, 2007. https://aurore.unilim.fr/theses/nxfile/default/f1bfd25b-e0f7-4e43-859b-0d7d3b984d33/blobholder:0/2007LIMO4018.pdf.
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Ces travaux portent sur la caractérisation de transistors de puissance bipolaires à hétéro-jonction Si/SiGe:C, issus des fonderies de STMicroelectronics Crolles, destinés aux applications de radiocommunications mobiles. Un historique des principales évolutions technologiques du transistor bipolaire est proposé. Les simulations CW, utilisant le modèle HICUM, ont mis en évidence l’influence du point de polarisation et des impédances de charge sur l’optimisation en rendement. Les simulations 2-tons et multi-tons ont confirmé le compromis rendement/linéarité. Une résolution originale pour tester la robustesse des transistors est ensuite exposée. Puis, les mesures réalisées sur le banc load-pull actif du laboratoire Xlim ont montré une bonne cohérence avec les simulations CW. Les comparaisons 2-tons sont prometteuses. Enfin, cette thèse a permis d’identifier le problème d’étalonnage du banc load-pull passif de STMicroelectonics. La résolution proposée a été approuvée par Focus MicrowavesThis work deals with the characterization of power hetero-junction bipolar transistors Si/SiGe:C produced by STMicroelectronics Crolles foundry, destined to mobile radio-communications applications. A historic of the main technological evolutions of the bipolar transistor is proposed. The CW simulations, using the HICUM model, highlighted the influence of the biasing and the charge impedances on the efficiency optimization. Next, an original resolution to test the transistors robustness is presented. Then, the measurements realized on the active load-pull bench of the Xlim laboratory showed a good consistency with the CW simulations. The 2-tons comparisons are promising. Finally, this thesis lets to identify a calibration problem on the passive load-pull bench of the STMicroelectronics laboratory. The proposed resolution has been approved by Focus Microwaves
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RamsiI, Abdelkrim. "Modélisation des transistors bipolaires silicium de puissance dans les bandes L et S." Châtenay-Malabry, Ecole centrale de Paris, 1992. http://www.theses.fr/1992ECAP0238.
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Ce travail présente une méthodologie de modélisation des transistors bipolaires de puissance dans les bandes L et S. Il a été effectué sur des transistors à structure interdigitée. Les phénomènes physiques liés au fonctionnement des transistors bipolaires silicium ont permis de développer un modèle paramétré en fonction du périmètre émetteur. Le nombre de paramètres du modèle est réduit de façon considérable par rapport au modèle de Gummel-Poon. La modélisation de l'effet Early a permis une bonne corrélation entre la mesure et la simulation en régime de fonctionnement statique. En régime dynamique petit signal le modèle développé est valide en comparant les paramètres [S] pris en plusieurs points de polarisation. En puissance, la caractéristique de la puissance de sortie en fonction de la puissance d'entrée a permis une validation du modèle en fonctionnement linéaire (classe A) et non linéaire (classes B et C). Les fonctions électroniques réalisées au cours de cette thèse sont basées sur le modèle développé. Pour chaque circuit sont présentées les étapes de la conception ainsi que la réalisation. Trois circuits ont été réalisés: un amplificateur classe A et un amplificateur classe B (1-1. 3 GHz) et enfin un oscillateur libre fonctionnant à la fréquence 4 GHz. Tous les circuits sont réalisés en technologie hybride.
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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.
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Besombes, Florent. "Modélisation électrothermique comportementale d'amplicateurs de puissance microondes pour les applications Radars à bande étroite." Limoges, 2012. https://aurore.unilim.fr/theses/nxfile/default/c747e865-0a15-4d10-bcdb-fef35131b91a/blobholder:0/2012LIMO4002.pdf.
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Ce travail de thèse concerne le développement d'un modèle électrothermique comportemental d'amplificateur de puissance RF prenant en compte l'effet load-pull pour des applications de radar à bande étroite. Une extension des paramètres S fort signal est proposée pour modéliser des fortes conditions de désadaptations en présence des effets de mémoire haute fréquence et des effets thermiques. Le modèle combine une cellule électrique basé sur les paramètres S fort signal avec une cellule thermique basée sur un modèle thermique réduit. Le modèle a été implémenté dans l'environnement de simulation système Scilab/Scicos. L'identification du modèle à partir de mesures load-pull pulsées isothermes et de simulation thermique tridimensionelle d'un amplificateur de puissance de type HBT AsGa/GAInP fonctionnant en bande X est présentée. Elles ont permis de démontrer les capacités du modèles à reproduire les distorsions induites sur le signal électrique et la température au sein de l'amplificateur en présence fortes désadaptions de l'impédance de sortieThis work deals with the electrothermal behavioral modeling of microwave power amplifier including the load-pull effects, for narrow band radar applications. An extension of nonlinear scattering functions is proposed for modeling large ouput impedance mismatches in the presence of high frequency memory and thermal effects. Its combines a nonlinear scattering functions cell for the electrical response with a reduced order thermal model. The model has been implemented in the system-level simulator Scilab/Scicos. The model identification from time domain load-pull measurements and thermal simulations of the 3D integration of an X band HBT AsGa/GaInP power amplifier is presented. They demonstrate the model ability to accurately reproduce transients behaviors of the electrical signals and temperature within the power amplifier for arbitrary load impedances
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Nilstadius, Gustaf, and Robin Duda. "Evaluation of push/pull based loadbalancing in a distributed loggingenvironment." Thesis, KTH, Data- och elektroteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-188539.
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This report compares the characteristics of push/pull load balancing techniques usedin the context of a logging system. The logging system is expected to handle a largevolume of events. The load balancing techniques are evaluated with focus onthroughput during high load. The testing scenarios includes the use of a traditionalload balancer (push-based) and the use of messaging queues (pull-based and indirectlycontext aware) in its place. The ultimate goal of the report is to determine the feasibilityof using a messaging queue rather than a traditional load balancer in a distributedlogging system. Tests were conducted measuring the throughput of multiple setupswith different load balancers. The conclusion of this report is that both messagingqueues and load balancing are equally feasible in a logging context.Rapporten jämför egenskaper hos lastbalanseringstekniker för användning i ettdistribuerat logghanteringssystem. Systemet förväntas hantera stora volymermeddelanden vid hög belastning. Testscenarion som utförs sker med traditionelllastbalansering där event trycks ut, samt med meddelandeköer som är hämtbaserade.Målet med rapporten är att avgöra om kontextbaserad lastbalansering kan ökastabiliteten i ett system avsett för hantering av loggdata. Testerna som utfördesuppmätte mängden data som gick igenom systemet vid en given tidpunkt, testernakördes med flera typer av lastbalanserare. Slutsatsen som dras är att bådemeddelandeköer och lastbalansering är passande för användning i ett loggsystem.
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Baylis, Charles Passant II. "Improved Techniques for Nonlinear Electrothermal FET Modeling and Measurement Validation." Scholar Commons, 2007. https://scholarcommons.usf.edu/etd/620.
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Accurate transistor models are important in wireless and microwave circuit design. Large-signal field-effect transistor (FET) models are generally extracted from current-voltage (IV) characteristics, small-signal S-parameters, and large-signal measurements. This dissertation describes improved characterization and measurement validation techniques for FET models that correctly account for thermal and trapping effects.
Demonstration of a customized pulsed-bias, pulsed-RF S-parameter system constructed by the author using a traditional vector network analyzer is presented, along with the design of special bias tees to allow pulsing of the bias voltages. Pulsed IV and pulsed-bias S-parameter measurements can provide results that are electrodynamically accurate; that is, thermal and trapping effects in the measurements are similar to those of radio-frequency or microwave operation at a desired quiescent bias point. The custom pulsed S-parameter system is benchmarked using passive devices and advantages and tradeoffs of pulsed S-parameter measurements are explored. Pulsed- and continuous-bias measurement results for a high-power transistor are used to validate thermal S-parameter correction procedures.
A new implementation of the steepest-ascent search algorithm for load-pull is presented. This algorithm provides for high-resolution determination of the maximum power and associated load impedance using a small number of measured or simulated reflection-coefficient states. To perform a more thorough nonlinear model validation, it is often desired to find the impedance providing maximum output power or efficiency over variations of a parameter such as drain voltage, input power, or process variation. The new algorithm enables this type of validation that is otherwise extremely tedious or impractical with traditional load-pull.
A modified nonlinear FET model is presented in this work that allows characterization of both thermal and trapping effects. New parameters and equation terms providing a trapping-related quiescent-bias dependence have been added to a popular nonlinear ("Angelov") model. A systematic method for fitting the quiescent-dependence parameters, temperature coefficients, and thermal resistance is presented, using a GaN high electron-mobility transistor as an example. The thermal resistance providing a good fit in the modeling procedure is shown to correspond well with infrared measurement results.
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Bousbia, Hind. "Analyse et développement de la caractérisation en puissance, rendement et linéarité de transistors de puissance en mode impulsionnel." Limoges, 2006. http://aurore.unilim.fr/theses/nxfile/default/f409eab6-d21e-443d-9d6b-b14970380c32/blobholder:0/2006LIMO0063.pdf.
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Il est aujourd’hui admis que les semi-conducteurs à large bande interdite vont permettre de repousser les frontières atteintes à ce jour dans le domaine de la génération de puissance hyperfréquence. L’analyse des principaux critères technologiques (physiques et électriques) des matériaux grands gap, et plus précisément du GaN montre que ce dernier est un candidat sérieux pour les applications de télécommunications et radar. Un modèle électrothermique de ces transistors hyperfréquences à FET sur GaN a été utilisé dans ces travaux pour analyser les comportements transitoires lents dus aux effets thermiques et aux effets de pièges. Une comparaison des performances en puissance, rendement et linéarité a été faite entre les résultats de simulation et ceux de mesure pour des signaux de deux types : CW impulsionnels et Bi porteuses impulsionnels. L’utilisation de signaux CW impulsionnels a permis une validation pratique des modèles électrothermiques de transistors HBT et une expertise de différentes filières technologiques de ces transistors. L’utilisation de signaux bi porteuses impulsionnels a permis d’observer des tendances sur les compromis rendement/linéarité en fonction des effets de pièges de transistors FET GaN. Des mesures réalisées sur une configuration originale d’un banc de caractérisation de type « load-pull » pour une mesure d’intermodulation en mode pulsé ont permis de montrer les limitations actuelles des modèles de ces transistors dans le cadre de simulations de fonctionnement dynamiqueIt is admitted today that wide band-gap materials will make it possible to push back the borders reached to date in the field of RF power generation. The analysis of the properties of wide band-gap materials, and especially the GaN material, highlights that it is a serious candidate for telecommunication and radar applications. RF field effect transistors on GaN are prone to show dispersive behaviors due to heating and trapping effects. A non linear electrothermal model of these high frequency FETs transistors on GaN used in this work makes possible the analysis of dispersive behaviors due to heating and trapping effects. A comparison of performances in terms of output power, power added efficiency and linearity has been made between simulation and measurement results for two type of excitation: one tone pulsed signal and two tones pulsed signal. The use of a one tone pulsed excitation permitted the validation of an HBT electrothermal model and the expertise of different technological process of these transistors. The use of a two tone pulsed excitation has permitted to observe the trade-offs between power added efficiency and linearity versus trapping effects. The measurements carried out on an original configuration of the load pull set up for intermodulation measurements under pulsed conditions had shown the actual limitations of the transistor model
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Capelli, Thomas. "Amplificateur de puissance pour réseaux phasés d’antenne 5G multi-bande en technologie ST CMOS065SOIMMW." Thesis, Bordeaux, 2022. http://www.theses.fr/2022BORD0176.
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Les télécommunications mobiles, afin de subvenir à leurs insatiables besoins, trouvent des moyens d’améliorer leurs capacités depuis maintenant plus de trente ans. En 2019 la cinquième génération (5G) est à l’épreuve afin de garantir une connexion non seulement au marché des téléphones mobiles toujours croissant, mais aussi au vaste univers de l’internet des objets (IoT). Afin de pouvoir remplir ses objectifs, la 5G marque une expansion sans précédent en matière de bandes de fréquences utilisées. En effet, des bandes jusqu’à 60 GHz et plus font partie des ambitions du réseau et cela implique de radicaux changements technologiques qui impactent toute l’électronique dédiée. Nouvelles fréquences plus élevées, pertes de propagation dans l’air plus élevées et niveau d’exigences relevé, les réseaux phasés d’antenne sont introduits pour pallier à toutes ces contraintes et imposent une toute nouvelle architecture système et une interface inédite pour les front-end RF des communications mobiles.Dans ce travail, nous proposons donc une analyse de ces réseaux d’antennes phasés et des contraintes qu’ils représentent en particulier pour les amplificateurs de puissance (PA), tel que la variation de charge parasite et le comportement des composantes générées par le comportement non-linéraire de ces derniers. Une évaluation de la variation de charge active due aux différents couplages existants dans les réseaux d’antennes est proposée ainsi que de son impact sur la performance des amplificateurs notamment en termes d’efficacité (PAE). Le comportement des non-linéarités telles que les produits d’intermodulation du troisième ordre (IMD3) est montré dans les réseaux d’antennes. Un concept utilisant le principe de génération et d’orientation de faisceau des réseaux d’antennes est proposé, permettant de relâcher les contraintes de linéarité des amplificateurs 5G et ainsi de permettre une réduction de leur consommation d’énergie. Une implémentation d’un PA utilisant ce principe est démontrée en technologie ST CMOS 65 nm PD-SOI à 28 GHzMobile telecommunications, in order to support its insatiable needs, has been finding ways to improve its capabilities for over thirty years now. In 2019 the fifth generation (5G) is on trial to ensure connection not only to the ever-growing cell phone market, but also to the vast world of the Internet of Things (IoT). In order to meet its goals, 5G marks an unprecedented expansion in the frequency bands used. Indeed, bands up to 60 GHz and beyond are part of the network's ambitions and this implies radical technological changes that impact all dedicated electronics. New higher frequencies, higher propagation losses in the air, and higher requirements, antenna phased arrays are introduced to overcome all these constraints and impose a completely new system architecture and interface for the RF front-end of mobile communications.In this work, we propose an analysis of these phased antenna arrays and the constraints they represent particularly for power amplifiers (PA), such as the parasitic load variation and the behavior of the components generated by the non-linear behavior of the latter. An evaluation of the active load variation due to the different coupling existing in the antenna networks is proposed as well as its impact on the performance of the amplifiers, particularly in terms of power added efficiency (PAE). The behavior of nonlinearities such as third-order intermodulation products (IMD3) is shown in antenna arrays. A concept using the principle of beam generation and steering of antenna arrays is proposed, allowing for relaxing the linearity constraints of 5G amplifiers and thus allowing a reduction of their power consumption. An implementation of an AP using this principle is demonstrated in ST CMOS 65 nm PD-SOI technology at 28 GHz
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Cui, Xian. "Efficient radio frequency power amplifiers for wireless communications." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1195652135.
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