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Journal articles on the topic 'Liquid phase epitaxy'

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Published: 4 June 2021

Last updated: 25 May 2024

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1

Kuphal, E. "Liquid phase epitaxy." Applied Physics A Solids and Surfaces 52, no. 6 (June 1991): 380–409. http://dx.doi.org/10.1007/bf00323650.

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2

Görnert, P., A. Aichele, S. Bornmann, and C. Dubs. "Liquid-phase epitaxy of HTcsuperconductors." Acta Crystallographica Section A Foundations of Crystallography 52, a1 (August 8, 1996): C511. http://dx.doi.org/10.1107/s0108767396079160.

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3

Rogin, P., and J. Hulliger. "Liquid phase epitaxy of LiYF4." Journal of Crystal Growth 179, no. 3-4 (August 1997): 551–58. http://dx.doi.org/10.1016/s0022-0248(97)00163-2.

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4

Lendvay, E., V. A. Gevorkyan, L. Petrás, I. Pozsgai, T. Görög, and A. L. Tóth. "Liquid phase epitaxy of AlGaInSb." Journal of Crystal Growth 73, no. 1 (October 1985): 63–72. http://dx.doi.org/10.1016/0022-0248(85)90331-8.

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5

Bauser, E., P. O. Hansson, M. Albrecht, Horst P. Strunk, and Allen Gustafson. "Liquid Phase Epitaxy of SiGe Structures." Solid State Phenomena 32-33 (December 1993): 385–96. http://dx.doi.org/10.4028/www.scientific.net/ssp.32-33.385.

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6

Baliga, B. Jayant. "Silicon Liquid Phase Epitaxy: A Review." Journal of The Electrochemical Society 133, no. 1 (January 1, 1986): 5C—14C. http://dx.doi.org/10.1149/1.2108542.

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7

Eminov, Sh O., and A. A. Radjabli. "A device for liquid-phase epitaxy." Instruments and Experimental Techniques 53, no. 2 (March 2010): 298–300. http://dx.doi.org/10.1134/s0020441210020260.

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8

Peña, Alexandra, Patrice Camy, Abdelmjid Benayad, Jean-Louis Doualan, Clément Maurel, Mélinda Olivier, Virginie Nazabal, and Richard Moncorgé. "Yb:CaF2 grown by liquid phase epitaxy." Optical Materials 33, no. 11 (September 2011): 1616–20. http://dx.doi.org/10.1016/j.optmat.2011.04.025.

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9

Jaramillo-Cabanzo, Daniel F., Jacek B. Jasinski, and Mahendra K. Sunkara. "Liquid Phase Epitaxy of Gallium Nitride." Crystal Growth & Design 19, no. 11 (September 17, 2019): 6577–85. http://dx.doi.org/10.1021/acs.cgd.9b01011.

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10

Popov, V. P. "Nonconservative liquid-phase epitaxy of semiconductors." Soviet Physics Journal 31, no. 1 (January 1988): 45–50. http://dx.doi.org/10.1007/bf00896685.

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11

Jie, Sun, Hu Lizhong, Sun Yingchun, Wang Zhaoyang, and Zhang Hongzhi. "Liquid phase epitaxy of Al0.3Ga0.7As islands." Journal of Crystal Growth 270, no. 1-2 (September 2004): 38–41. http://dx.doi.org/10.1016/j.jcrysgro.2004.06.012.

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12

Sundaram, K. B., N. Dalacu, and B. K. Garside. "Some studies on the growth and properties of Pb1−xSnxTe layers by hot-wall and liquid-phase epitaxy." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 753–56. http://dx.doi.org/10.1139/p85-120.

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Pb0.92Sn0.08Te layers have been grown by hot-wall and liquid-phase epitaxy techniques. In the hot-wall epitaxy case, layers are grown on BaF2 and Pb0.92Sn0.08Te single-crystal substrates, while in the case of liquid-phase epitaxy, single crystals of PbTe and Pb0.92Sn0.08Te are used. In both cases x-ray Laue diffraction studies indicated the growth of good quality epilayers suitable for device fabrication.

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13

Chen, Mu-Kuen. "Two-phase liquid phase epitaxy of In0.53Ga0.47As on InP." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 4 (July 1993): 1209. http://dx.doi.org/10.1116/1.586922.

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14

Yamada, Y. "Liquid-phase epitaxy processing of RBa2Cu3O7−δ." Superconductor Science and Technology 13, no. 1 (January 1, 2000): 82–87. http://dx.doi.org/10.1088/0953-2048/13/1/311.

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15

Benchimol, J. L., S. Slempkes, D. C. N’Guyen, G. LeRoux, J. F. Bresse, and J. Primot. "InGaAsP superlattices grown by liquid‐phase epitaxy." Journal of Applied Physics 59, no. 12 (June 15, 1986): 4068–72. http://dx.doi.org/10.1063/1.336713.

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16

Zhengrong, Shi, Trevor L. Young, and Martin A. Green. "Low-temperature liquid phase epitaxy of silicon." Materials Letters 12, no. 5 (December 1991): 339–43. http://dx.doi.org/10.1016/0167-577x(91)90113-k.

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17

Peev, N. S. "Liquid phase epitaxy of GaAs and AlGaAs." Journal of Crystal Growth 98, no. 3 (November 1989): 499–503. http://dx.doi.org/10.1016/0022-0248(89)90167-x.

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18

Klemenz, C., and H. J. Scheel. "Liquid phase epitaxy of high-Tc superconductors." Journal of Crystal Growth 129, no. 3-4 (April 1993): 421–28. http://dx.doi.org/10.1016/0022-0248(93)90476-d.

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19

Chernov, A. A., and H. J. Scheel. "Extremely flat surfaces by liquid phase epitaxy." Journal of Crystal Growth 149, no. 3-4 (April 1995): 187–95. http://dx.doi.org/10.1016/0022-0248(95)00014-3.

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20

Nikolaev, A. E., V. A. Ivantsov, S. V. Rendakova, M. N. Blashenkov, and V. A. Dmitriev. "SiC liquid-phase epitaxy on patterned substrates." Journal of Crystal Growth 166, no. 1-4 (September 1996): 607–11. http://dx.doi.org/10.1016/0022-0248(95)00566-8.

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21

Feng Qiu, Feng Qiu, Yingfei Lv Yingfei Lv, Jianhua Guo Jianhua Guo, Yan Sun Yan Sun, Huiyong Deng Huiyong Deng, Shuhong Hu Shuhong Hu, and Ning Dai Ning Dai. "Growth and Raman spectra of GaSb quantum dots in GaAs matrices by liquid phase epitaxy." Chinese Optics Letters 10, s2 (2012): S21603–321606. http://dx.doi.org/10.3788/col201210.s21603.

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22

Algora, C., and M. A. Martínez. "Al-Ga-As-dopant phase-equilibria for liquid phase epitaxy." Journal of Electronic Materials 25, no. 9 (September 1996): 1463–68. http://dx.doi.org/10.1007/bf02655384.

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23

Lu, Yi, Benjamin Johnston, Peter Dekker, Michael J. Withford, and Judith M. Dawes. "Channel Waveguides in Lithium Niobate and Lithium Tantalate." Molecules 25, no. 17 (August 27, 2020): 3925. http://dx.doi.org/10.3390/molecules25173925.

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Low-loss photonic waveguides in lithium niobate offer versatile functionality as nonlinear frequency converters, switches, and modulators for integrated optics. Combining the flexibility of laser processing with liquid phase epitaxy we have fabricated and characterized lithium niobate channel waveguides on lithium niobate and lithium tantalate. We used liquid phase epitaxy with K2O flux on laser-machined lithium niobate and lithium tantalate substrates. The laser-driven rapid-prototyping technique can be programmed to give machined features of various sizes, and liquid phase epitaxy produces high quality single-crystal, lithium niobate channels. The surface roughness of the lithium niobate channels on a lithium tantalate substrate was measured to be 90 nm. The lithium niobate channel waveguides exhibit propagation losses of 0.26 ± 0.04 dB/mm at a wavelength of 633 nm. Second harmonic generation at 980 nm was demonstrated using the channel waveguides, indicating that these waveguides retain their nonlinear optical properties.

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24

HU, Shu-Hong, Feng QIU, Ying-Fei LV, Chang-Hong SUN, Qi-Wei WANG, Jian-Hua GUO, Hui-Yong DENG, et al. "GaSb Quantum Dots growth by Liquid Phase Epitaxy." Journal of Infrared and Millimeter Waves 32, no. 3 (2013): 220. http://dx.doi.org/10.3724/sp.j.1010.2013.00220.

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25

TOLKSDORF, W., H. DAMMANN, and E. PROSS. "MAGNETO-OPTIC GARNET LAYERS BY LIQUID PHASE EPITAXY." Journal of the Magnetics Society of Japan 11, S_1_ISMO (1987): S1_341–345. http://dx.doi.org/10.3379/jmsjmag.11.s1_341.

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26

Hacham, A., U. El‐Hanany, S. Rotter, and Yoram Shapira. "Liquid phase epitaxy of Pb1−xEuxTe thin films." Applied Physics Letters 52, no. 2 (January 11, 1988): 108–10. http://dx.doi.org/10.1063/1.99065.

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27

Maronchuk, I. Ye, V. V. Kurak, E. V. Andronova, and Ye A. Baganov. "Obtaining GaSb/InAs heterostructures by liquid phase epitaxy." Semiconductor Science and Technology 19, no. 6 (April 9, 2004): 747–51. http://dx.doi.org/10.1088/0268-1242/19/6/015.

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28

Bohac, P., and H. Kaufmann. "KTN optical waveguides grown by liquid-phase epitaxy." Electronics Letters 22, no. 16 (1986): 861. http://dx.doi.org/10.1049/el:19860589.

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29

Kursumovic, A., R. I. Tomov, R. Hühne, J. L. MacManus-Driscoll, B. A. Glowacki, and J. E. Evetts. "Hybrid liquid phase epitaxy processes for YBa2Cu3O7film growth." Superconductor Science and Technology 17, no. 10 (August 14, 2004): 1215–23. http://dx.doi.org/10.1088/0953-2048/17/10/024.

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30

Chang, L. B., K. Y. Cheng, and C. C. Liu. "Magnesium‐doped In0.5Ga0.5P growth by liquid‐phase epitaxy." Journal of Applied Physics 64, no. 3 (August 1988): 1116–19. http://dx.doi.org/10.1063/1.341870.

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31

Compeán-Jasso, V. H., F. de Anda, V. A. Mishurnyi, A. Yu Gorbatchev, T. Prutskij, and Yu Kudriavtsev. "Sn doped GaSb grown by liquid phase epitaxy." Thin Solid Films 548 (December 2013): 168–70. http://dx.doi.org/10.1016/j.tsf.2013.09.052.

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32

Cheng, L. K., J. D. Bierlein, and A. A. Ballman. "KTiOPxAs1−xO4optical waveguides grown by liquid phase epitaxy." Applied Physics Letters 58, no. 18 (May 6, 1991): 1937–39. http://dx.doi.org/10.1063/1.105051.

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33

Konuma, M., G. Cristiani, E. Czech, and I. Silier. "Liquid phase epitaxy of Si from Pb solutions." Journal of Crystal Growth 198-199 (March 1999): 1045–48. http://dx.doi.org/10.1016/s0022-0248(98)01085-9.

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34

Greenlee, Jordan D., Joshua C. Shank, M. Brooks Tellekamp, Brendan P. Gunning, Chloe A. M. Fabien, and W. Alan Doolittle. "Liquid Phase Electro-Epitaxy of Memristive LiNbO2 Crystals." Crystal Growth & Design 14, no. 5 (April 25, 2014): 2218–22. http://dx.doi.org/10.1021/cg401775p.

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35

Käss, D., M. Warth, H. P. Strunk, and E. Bauser. "Liquid phase epitaxy of silicon: Potentials and prospects." Physica B+C 129, no. 1-3 (March 1985): 161–65. http://dx.doi.org/10.1016/0378-4363(85)90561-3.

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36

Kresse, F., G. G. Baumann, O. Jäntsch, and K. Haberger. "Liquid phase epitaxy of silicon at low temperatures." Journal of Crystal Growth 104, no. 3 (August 1990): 744–47. http://dx.doi.org/10.1016/0022-0248(90)90017-f.

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37

Pelliciari, B. "Te-rich liquid-phase epitaxy of Hg1−xCdxTe." Progress in Crystal Growth and Characterization of Materials 29, no. 1-4 (January 1994): 1–39. http://dx.doi.org/10.1016/0960-8974(94)90003-5.

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38

Kalisher, M. H., P. E. Herning, and T. Tung. "Hg-rich liquid-phase epitaxy of Hg1−xCdxTe." Progress in Crystal Growth and Characterization of Materials 29, no. 1-4 (January 1994): 41–83. http://dx.doi.org/10.1016/0960-8974(94)90004-3.

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39

Yamaguchi, Toshinao, Fumito Ueda, and Masaaki Imamura. "Growth of Superconductive Bi2Sr2CaCu2OxFilm by Liquid Phase Epitaxy." Japanese Journal of Applied Physics 32, Part 1, No. 4 (April 15, 1993): 1634–35. http://dx.doi.org/10.1143/jjap.32.1634.

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40

Morikoshi, Hiroki, Nobuya Uchida, Akio Nakata, Kazuhito Yamasawa, and Yoshikazu Narumiya. "PbTiO3Films Grown by the Liquid Phase Epitaxy Method." Japanese Journal of Applied Physics 35, Part 1, No. 9B (September 30, 1996): 4991–94. http://dx.doi.org/10.1143/jjap.35.4991.

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41

Chang, Liann-Be, Tung-Win Wang, Cheng-Chung Liu, Yao-Hwa Wu, and Yi-Chang Cheng. "Impurity Gettering Effect inPr2O3-AddedInGaAs Liquid Phase Epitaxy." Japanese Journal of Applied Physics 36, Part 1, No. 12A (December 15, 1997): 7264–66. http://dx.doi.org/10.1143/jjap.36.7264.

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42

Balasubramanian, S., and V. Kumar. "Properties of GaAs:V grown by liquid phase epitaxy." Semiconductor Science and Technology 7, no. 8 (August 1, 1992): 1117–18. http://dx.doi.org/10.1088/0268-1242/7/8/016.

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43

Krier, A., Z. Labadi, and A. Hammiche. "InAsSbP quantum dots grown by liquid phase epitaxy." Journal of Physics D: Applied Physics 32, no. 20 (October 13, 1999): 2587–89. http://dx.doi.org/10.1088/0022-3727/32/20/301.

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44

Leshko, A. Yu, A. V. Lyutetskii, A. V. Murashova, N. A. Pikhtin, I. S. Tarasov, I. N. Arsent’ev, B. Ya Ber, Yu A. Kudryavtsev, Yu V. Il’in, and N. V. Fetisova. "Multiwell laser heterostructures fabricated by liquid-phase epitaxy." Technical Physics Letters 24, no. 11 (November 1998): 854–56. http://dx.doi.org/10.1134/1.1262291.

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45

Konuma, M., I. Silier, E. Czech, and E. Bauser. "Semiconductor liquid phase epitaxy for solar cell application." Solar Energy Materials and Solar Cells 34, no. 1-4 (September 1994): 251–56. http://dx.doi.org/10.1016/0927-0248(94)90047-7.

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46

Yin, M., and A. Krier. "InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy." Infrared Physics & Technology 58 (May 2013): 47–50. http://dx.doi.org/10.1016/j.infrared.2013.01.008.

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47

Venkataraghavan, R., N. K. Udayashankar, Blasius Victor Rodrigues, K. S. R. K. Rao, and H. L. Bhat. "Design and fabrication of liquid phase epitaxy system." Bulletin of Materials Science 22, no. 2 (April 1999): 133–37. http://dx.doi.org/10.1007/bf02745566.

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48

Amornkitbamrung, Vittaya, and Somphong Chatraphorn. "Cubic Sn from liquid phase epitaxy on InSb." Journal of Crystal Growth 84, no. 2 (August 1987): 326–28. http://dx.doi.org/10.1016/0022-0248(87)90149-7.

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49

Bantien, F., K. Kelting, and E. Bauser. "Liquid phase epitaxy of GaAs quantum well structures." Journal of Crystal Growth 85, no. 1-2 (November 1987): 194–98. http://dx.doi.org/10.1016/0022-0248(87)90222-3.

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50

Tew, Bo E., Matthew R. Lewis, Chun-Yen Hsu, Chaoying Ni, and Joshua M. O. Zide. "Growth of ErAs:GaAs nanocomposite by liquid phase epitaxy." Journal of Crystal Growth 518 (July 2019): 34–38. http://dx.doi.org/10.1016/j.jcrysgro.2019.04.025.

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