Relevant bibliographies by topics / Light emitting elements

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Academic literature on the topic 'Light emitting elements'

Author: Grafiati
Published: 6 September 2023

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Dissertations / Theses on the topic "Light emitting elements"

1

Siddiqui, Saiful Anam. "Erbium doped silicon light emitting diodes." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843408/.

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Erbium, a rare earth element, has been shown to exhibit characteristic luminescence at 1.54mum due to its internal 4f transition from the first excited state (4pi3/2) to the ground state (4pi5/2). As this emission wavelength falls inside the maximum transmission window of silicon based optical fibers, erbium doped silicon might lead to the opportunity of silicon based optoelectronics. The introduction of erbium in silicon allows excitation through electron-hole recombination and subsequent radiative emission from the rare earth centers. The works reported here describe the structural, electric
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Habtemichael, Yishak Tekleab. "Packaging designs for ultraviolet light emitting diodes." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45764.

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Aluminum Gallium Nitride (AlGaN) / Gallium Nitride (GaN) based deep ultraviolet (DUV) light emitting didoes (LEDs) with emission wavelengths between 200-280 nm enable key emerging technologies such as water/air purification and sterilization, covert communications and portable bio-agent detection/identification systems for homeland security, and surface and medical device sterilization. These devices produce a large amount of undesired heat due to low quantum efficiencies in converting electrical input to optical output. These low efficiencies are attributed to difficulties in the growth&dopin
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Yeo, Hyeonuk. "Synthesis of Optical Materials Based on Element-Blocks and Their Properties." 京都大学 (Kyoto University), 2017. http://hdl.handle.net/2433/225317.

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Williams, Jonathan H. T. "Finite element simulations of excitonic solar cells and organic light emitting diodes." Thesis, University of Bath, 2008. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.445404.

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Musolino, Mattia. "Growth, fabrication, and investigation of light-emitting diodes based on GaN nanowires." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät, 2016. http://dx.doi.org/10.18452/17409.

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Diese Arbeit gibt einen tiefgehenden Einblick in verschiedene Aspekte von auf (In,Ga)N/GaN Heterostrukturen basierenden Leuchtdioden (LEDs), mittels Molekularstrahlepitaxie entlang der Achse von Nanodrähten (NWs) auf Si Substraten gewachsen. Insbesondere wurden die Wachstumsparameter angepasst, um eine Koaleszierung der Nanodrähte zu vermindern. Auf diese Weise konnte die durch die NW-LEDs emittierte Intensität der Photolumineszenz (PL) um einen Faktor zehn erhöht werden. Die opto-elektronischen Eigenschaften von NW-LEDs konnten durch die Verwendung von Indiumzinoxid, anstatt von Ni/Au als
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Eritt, Michael. "Großflächige Abscheidung organischer Leuchtdioden und Nutzung optischer Verfahren zur in situ Prozesskontrolle." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-63184.

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In der vorliegenden Arbeit wird die großflächige Abscheidung von organischen Leuchtdioden (OLED) für Beleuchtungsanwendungen in einer neuartigen Beschichtungsanlage vorgestellt. Ausgehend von den speziellen Anforderungen an gleichförmige Schichtdickenverteilung und hohe Abscheideraten für die organischen Schichten, sind die Verfahren der thermischen Vakuumverdampfung (VTE) und der organischen Dampfphasenabscheidung (OVPD) auf Substraten der Größe 370 x 470 mm² unter Fertigungsbedingungen kombiniert. Die Quellensysteme der Anlage wurden hinsichtlich der Verteilung des Materialauftrages und der
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Connors, Benjamin James. "Simulation of current crowding mitigation in GaN core-shell nanowire led designs." Thesis, Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41206.

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Core-shell nanowire LEDs are light emitting devices which, due to a high aspect ratio, have low substrate sensitivity, allowing the possibility of low defect density GaN light emitting diodes. Current growth techniques and physical non-idealities make the production of high conductivity p-type GaN for the shell region of these devices difficult. Due to the structure of core-shell nanowires and the difference in conductivity between ntype and p-type GaN, the full junction area of a core-shell nanowire is not used efficiently. To address this problem, a series of possible doping profiles
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Bender, Vitor Cristiano. "Metodologia de projeto eletrotérmico de LEDs aplicada ao desenvolvimento de sistemas de iluminação pública." Universidade Federal de Santa Maria, 2012. http://repositorio.ufsm.br/handle/1/8510.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>This work presents an LED electrothermal design methodology applied to a street lighting system. The methodology aims to provide indicatives of the optimal LED operating point for lighting systems design, considering electrical, thermal and photometric system features. Different projects are developed according to the methodology, the theoretical results are compared with fluid dynamics simulation and demonstrated by experimental results. A research including luminous flux, luminous efficacy and flicker is performed considering the
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Bender, Vitor Cristiano. "Modelagem e acionamento de diodos orgânicos emissores de luz (OLEDs) para sistemas de iluminação." Universidade Federal de Santa Maria, 2015. http://repositorio.ufsm.br/handle/1/3691.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>This thesis presents the study and characterization of organic light-emitting diodes (OLEDs) with the proposal of obtaining an equivalent model that is useful in the OLED driver design and in lighting systems projects. Initially, a literature review covering the operating principle and the constructive aspects of OLEDs is presented. From this, a model that integrates scale, photometrical, electrical and thermal aspects is proposed. This model is static and dynamic and is called EFET. A procedure for parameter identification of the
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Tu, Sheng-Han, and 杜昇翰. "Integration of special chip process and secondary elements for light emitting diodes illumination module." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/82409340006152693592.

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博士<br>國立中央大學<br>光電科學研究所<br>98<br>For the sake of energy shortage, the developments of new energy and energy saving have attracted the interests of advanced nations. The light emitting diodes possesses advantages such as low power consumption, compact volume and long life time so that it has took the place of conventional light source gradually. In this thesis we developed a series of methods that to crossed the chip process and lighting module enhance the light performance of light emitting diodes. We integrated special chip process and secondary optics element to form a lighting module that c
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