Journal articles: 'Light emitters in silicon'

1

Kittler, M., M. Reiche, T. Arguirov, W. Seifert, and X. Yu. "Silicon-based light emitters." physica status solidi (a) 203, no. 4 (March 2006): 802–9. http://dx.doi.org/10.1002/pssa.200564518.

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Helm, M., J. M. Sun, J. Potfajova, T. Dekorsy, B. Schmidt, and W. Skorupa. "Efficient silicon based light emitters." Microelectronics Journal 36, no. 11 (November 2005): 957–62. http://dx.doi.org/10.1016/j.mejo.2005.04.002.

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Kittler, Martin, Teimuraz Mchedlidze, Tzanimir Arguirov, Winfried Seifert, Manfred Reiche, and Thomas Wilhelm. "Silicon based IR light emitters." physica status solidi (c) 6, no. 3 (March 2009): 707–15. http://dx.doi.org/10.1002/pssc.200880713.

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Kasper, Erich, and Michael Oehme. "Germanium tin light emitters on silicon." Japanese Journal of Applied Physics 54, no. 4S (March 27, 2015): 04DG11. http://dx.doi.org/10.7567/jjap.54.04dg11.

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Guha, Supratik, and Nestor A. Bojarczuk. "Multicolored light emitters on silicon substrates." Applied Physics Letters 73, no. 11 (September 14, 1998): 1487–89. http://dx.doi.org/10.1063/1.122181.

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Fauchet, P. M. "Progress toward nanoscale silicon light emitters." IEEE Journal of Selected Topics in Quantum Electronics 4, no. 6 (1998): 1020–28. http://dx.doi.org/10.1109/2944.736103.

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Kittler, M., T. Arguirov, W. Seifert, X. Yu, G. Jia, O. F. Vyvenko, T. Mchedlidze, M. Reiche, J. Sha, and D. Yang. "Silicon nanostructures for IR light emitters." Materials Science and Engineering: C 27, no. 5-8 (September 2007): 1252–59. http://dx.doi.org/10.1016/j.msec.2006.09.034.

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Makarova, Maria, Jelena Vuckovic, Hiroyuki Sanda, and Yoshio Nishi. "Silicon-based photonic crystal nanocavity light emitters." Applied Physics Letters 89, no. 22 (November 27, 2006): 221101. http://dx.doi.org/10.1063/1.2396903.

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Kveder, Vitaly V., and Martin Kittler. "Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters." Materials Science Forum 590 (August 2008): 29–56. http://dx.doi.org/10.4028/www.scientific.net/msf.590.29.

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There is a growing demand for a silicon-based light emitters generating a light with a wavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in-chip opto-electronic interconnects. Among other possibilities, the D1 luminescence at about 1.55 m, caused by dislocations in Si, can be a suitable candidate for such in-chip light emitters. Here we present a brief review of today knowledge about electronic properties of dislocations in silicon and dislocation-related luminescence in connection with possible application of this luminescence for silicon infrared light-emitting diodes (Si-LEDs).

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Lourenço, M. A., and K. P. Homewood. "Dislocation-engineered silicon light emitters for photonic integration." Semiconductor Science and Technology 23, no. 6 (May 12, 2008): 064005. http://dx.doi.org/10.1088/0268-1242/23/6/064005.

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Pavesi, L. "Silicon-Based Light Sources for Silicon Integrated Circuits." Advances in Optical Technologies 2008 (June 30, 2008): 1–12. http://dx.doi.org/10.1155/2008/416926.

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Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

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González-Fernández, Alfredo A., Mariano Aceves-Mijares, Oscar Pérez-Díaz, Joaquin Hernández-Betanzos, and Carlos Domínguez. "Embedded Silicon Nanoparticles as Enabler of a Novel CMOS-Compatible Fully Integrated Silicon Photonics Platform." Crystals 11, no. 6 (May 31, 2021): 630. http://dx.doi.org/10.3390/cryst11060630.

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The historical bottleneck for truly high scale integrated photonics is the light emitter. The lack of monolithically integrable light sources increases costs and reduces scalability. Quantum phenomena found in embedded Si particles in the nanometer scale is a way of overcoming the limitations for bulk Si to emit light. Integrable light sources based in Si nanoparticles can be obtained by different CMOS (Complementary Metal Oxide Semiconductor) -compatible materials and techniques. Such materials in combination with Si3N4 photonic elements allow for integrated Si photonics, in which photodetectors can also be included directly in standard Si wafers, taking advantage of the emission in the visible range by the embedded Si nanocrystals/nanoparticles. We present the advances and perspectives on seamless monolithic integration of CMOS-compatible visible light emitters, photonic elements, and photodetectors, which are shown to be viable and promising well within the technological limits imposed by standard fabrication methods.

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KOLODZEY, J., T. N. ADAM, R. T. TROEGER, P. C. LV, S. K. RAY, I. YASSIEVICH, M. ODNOBLYUDOV, and M. KAGAN. "TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES." International Journal of Nanoscience 03, no. 01n02 (February 2004): 171–76. http://dx.doi.org/10.1142/s0219581x0400195x.

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Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions from dopant atoms in silicon. The devices were grown by molecular beam epitaxy, fabricated by dry etching, and characterized by infrared spectroscopy. The absorption of THz was observed in silicon germanium quantum wells at energies corresponding to heavy hole and light hole intersubband transitions. These results suggest that SiGe nanotechnology is attractive for THz device applications.

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Chen, Chengzhao, Cheng Li, Shihao Huang, Yuanyu Zheng, Hongkai Lai, and Songyan Chen. "Epitaxial Growth of Germanium on Silicon for Light Emitters." International Journal of Photoenergy 2012 (2012): 1–8. http://dx.doi.org/10.1155/2012/768605.

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This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

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Sasani Ghamsari, Morteza. "Chip-Scale Quantum Emitters." Quantum Reports 3, no. 4 (September 29, 2021): 615–42. http://dx.doi.org/10.3390/quantum3040039.

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Integration of chip-scale quantum technology was the main aim of this study. First, the recent progress on silicon-based photonic integrated circuits is surveyed, and then it is shown that silicon integrated quantum photonics can be considered a compelling platform for the future of quantum technologies. Among subsections of quantum technology, quantum emitters were selected as the object, and different quantum emitters such as quantum dots, 2D materials, and carbon nanotubes are introduced. Later on, the most recent progress is highlighted to provide an extensive overview of the development of chip-scale quantum emitters. It seems that the next step towards the practical application of quantum emitters is to generate position-controlled quantum light sources. Among developed processes, it can be recognized that droplet–epitaxial QD growth has a promising future for the preparation of chip-scale quantum emitters.

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Kittler, Martin, Tzanimir Arguirov, Winfried Seifert, X. Yu, and Manfred Reiche. "Silicon Based Light Emitters for On-Chip Optical Interconnects." Solid State Phenomena 108-109 (December 2005): 749–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.749.

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Electroluminescence of B and P implanted samples has been studied. P implantation is found to have a similar effect on light emission as B implant. The band-to-band (BB) luminescence of P implanted diodes is observed to increase by more than one order of magnitude upon rising the temperature and an internal efficiency of 2 % has been reached at 300 K. An efficiency larger than 5% seems to be reachable. The strong BB line emission at 1.1 &m is attributed to high bulk SRH lifetime. The BB line escapes from the substrate below the p-n junction. It is not due to the implantation-related defects/dislocations. The luminescence spectrum can be tailored to achieve dominance of the dislocation-related D1 line at about 1.5 &m. It is observed that a regular periodic dislocation network, formed by Si wafer direct bonding with a specific misorientation, exhibits even at 300 K only D1 photoluminescence. Such a dislocation network is believed to be a serious candidate to gain an efficient Si-based light emitter.

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Tsintzos, Symeon I., Konstantinos Tsimvrakidis, James C. Gates, Ali W. Elshaari, Peter G. R. Smith, Val Zwiller, and Christos Riziotis. "Coupling Nanowire Quantum Dots to Optical Waveguides by Microsphere-Induced Photonic Nanojet." Photonics 11, no. 4 (April 9, 2024): 343. http://dx.doi.org/10.3390/photonics11040343.

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Silica-on-silicon is a major optical integration platform, while the emergent class of the integrated laser-written circuits’ platform offers additionally high customizability and flexibility for rapid prototyping. However, the inherent waveguides’ low core/cladding refractive index contrast characteristic, compared to other photonic platforms in silicon or silicon nitride, sets serious limitations for on-chip efficient coupling with single photon emitters, like semiconductor nanowires with quantum dots, limiting the applications in quantum computing. A new light coupling scheme proposed here overcomes this limitation, providing means for light coupling >50%. The scheme is based on the incorporation of an optical microsphere between the nanowire and the waveguide, which is properly optimized and arranged in terms of size, refractive index, and the distance of the microsphere between the nanowire and waveguide. Upon suitable design of the optical arrangement, the photonic nanojet emitted by the illuminated microsphere excites efficiently the guided eigenmodes of the input channel waveguide, thus launching light with high-coupling efficiency. The method is tolerant in displacements, misalignments, and imperfections and is fabricationally feasible by the current state of art techniques. The proposed method enables the on-chip multiple single photon emitters’ integration, thus allowing for the development of highly customizable and scalable quantum photonic-integrated circuits for quantum computing and communications.

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Lockwood, David J., and Leonid Tsybeskov. "Self-assembled silicon-germanium nanostructures for CMOS compatible light emitters." physica status solidi (c) 8, no. 9 (May 2, 2011): 2870–74. http://dx.doi.org/10.1002/pssc.201084032.

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Hou, Guozhi, Qingyuan Wang, Yu Zhu, Zhangbo Lu, Jun Xu, and Kunji Chen. "Tunable Narrowband Silicon-Based Thermal Emitter with Excellent High-Temperature Stability Fabricated by Lithography-Free Methods." Nanomaterials 11, no. 7 (July 13, 2021): 1814. http://dx.doi.org/10.3390/nano11071814.

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Thermal emitters with properties of wavelength-selective and narrowband have been highly sought after for a variety of potential applications due to their high energy efficiency in the mid-infrared spectral range. In this study, we theoretically and experimentally demonstrate the tunable narrowband thermal emitter based on fully planar Si-W-SiN/SiNO multilayer, which is realized by the excitation of Tamm plasmon polaritons between a W layer and a SiN/SiNO-distributed Bragg reflector. In conjunction with electromagnetic simulations by the FDTD method, the optimum structure design of the emitter is implemented by 2.5 periods of DBR structure, and the corresponding emitter exhibits the nearly perfect narrowband absorption performance at the resonance wavelength and suppressed absorption performance in long wave range. Additionally, the narrowband absorption peak is insensitive to polarization mode and has a considerable angular tolerance of incident light. Furthermore, the actual high-quality Si-W-SiN/SiNO emitters are fabricated through lithography-free methods including magnetron sputtering and PECVD technology. The experimental absorption spectra of optimized emitters are found to be in good agreement with the simulated absorption spectra, showing the tunable narrowband absorption with all peak values of over 95%. Remarkably, the fabricated Si-W-SiN/SiNO emitter presents excellent high-temperature stability for several heating/cooling cycles confirmed up to 1200 K in Ar ambient. This easy-to-fabricate and tunable narrowband refractory emitter paves the way for practical designs in various photonic and thermal applications, such as thermophotovoltaic and IR radiative heaters.

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Pearson, Andrew J., Trevor Plint, Saul T. E. Jones, Benoit H. Lessard, Dan Credgington, Timothy P. Bender, and Neil C. Greenham. "Silicon phthalocyanines as dopant red emitters for efficient solution processed OLEDs." Journal of Materials Chemistry C 5, no. 48 (2017): 12688–98. http://dx.doi.org/10.1039/c7tc03946h.

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The optical characterisation and device functionality for a series of axially modified silicon phthalocyanines (SiPcs) as dopant red emitters in solution-processed and vapour-deposited organic light-emitting diodes (OLEDs) is presented.

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Sung, Min Jae, Hiroya Chubachi, Ryo Sato, Min-Ki Shin, Soon-Ki Kwon, Yong-Jin Pu, and Yun-Hi Kim. "Dimethylsilyl-linked anthracene–pyrene dimers and their efficient triplet–triplet annihilation in organic light emitting diodes." Journal of Materials Chemistry C 5, no. 5 (2017): 1090–94. http://dx.doi.org/10.1039/c6tc05308d.

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22

Jannesari, R., M. Schatzl, F. Hackl, M. Glaser, K. Hingerl, T. Fromherz, and F. Schäffler. "Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs." Optics Express 22, no. 21 (October 10, 2014): 25426. http://dx.doi.org/10.1364/oe.22.025426.

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Tsybeskov, Leonid, and David J. Lockwood. "Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects." Proceedings of the IEEE 97, no. 7 (July 2009): 1284–303. http://dx.doi.org/10.1109/jproc.2009.2020711.

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Kůsová, Kateřina. "Silicon nanocrystals as fast and efficient light emitters for optical gain." Journal of Non-Crystalline Solids 358, no. 17 (September 2012): 2130–33. http://dx.doi.org/10.1016/j.jnoncrysol.2011.11.027.

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Somogyi, Bálint, Viktor Zólyomi, and Adam Gali. "Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study." Materials Science Forum 740-742 (January 2013): 641–44. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.641.

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Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the nearinfrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

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Arguirov, T., M. Kittler, W. Seifert, and X. Yu. "Enhanced silicon band edge related radiation: Origin and applicability for light emitters." Materials Science and Engineering: B 124-125 (December 2005): 431–34. http://dx.doi.org/10.1016/j.mseb.2005.08.107.

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Gartman, Alexandra D., Alexander S. Shorokhov, and Andrey A. Fedyanin. "Efficient Light Coupling and Purcell Effect Enhancement for Interlayer Exciton Emitters in 2D Heterostructures Combined with SiN Nanoparticles." Nanomaterials 13, no. 12 (June 8, 2023): 1821. http://dx.doi.org/10.3390/nano13121821.

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Optimal design of a silicon nitride waveguide structure composed of resonant nanoantennas for efficient light coupling with interlayer exciton emitters in a MoSe2–WSe2 heterostructure is proposed. Numerical simulations demonstrate up to eight times coupling efficiency improvement and twelve times Purcell effect enhancement in comparison with a conventional strip waveguide. Achieved results can be beneficial for development of on-chip non-classical light sources.

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Chen, Fangqi, Xiaojie Liu, Yanpei Tian, Jon Goldsby, and Yi Zheng. "Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics." Energies 15, no. 5 (March 2, 2022): 1830. http://dx.doi.org/10.3390/en15051830.

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Thermophotovoltaics is a promising technology for heat recovery and has garnered tremendous attention in the last decades. This work theoretically evaluates the performance of a thermophotovoltaic system equipped with refractory all-ceramic selective thermal emitters made of boron carbide, silicon carbide and beryllium oxide for a high working temperature of 2000 ∘C, which corresponds to the external quantum efficiency of a SiC/Si tandem cell. The influence of thickness and filling ratio on the emissivity of thermal emitters over the wavelength ranging from 0.2 μm to 2.5 μm is studied. The corresponding spectral heat flux and output power are analyzed as well. For a specific configuration, the parameters for the thermophotovoltaic system are obtained, including short circuit current, open circuit voltage, fill factor, total heat flux, output power and conversion efficiency. The proposed all-ceramic thermal emitter ensures the robustness in the high-temperature working condition due to its thermal stability. The tuning of emissivity is achieved and analyzed based on distinct emitter nanostructures, and the further influence on the thermophotovoltaic system performance is deeply explored. This work sheds light on research of high-temperature thermal management and power generation.

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Zhang, Rong-An, Ting-Sheng Lin, Wai-Ting Liu, Shih-Hsiang Hsu, and Che-Chang Chang. "Grating Lobe-Free Beam Steering through Optical Phase Array Using Phase-Compensated Two Index-Mismatched Silicon Wires-Based Emitters." Applied Sciences 10, no. 4 (February 11, 2020): 1225. http://dx.doi.org/10.3390/app10041225.

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The beam formation can be treated as the diffraction pattern. A 1-D light detection and ranging beam steering could be derived through a phase shifter array using Rayleigh–Sommerfeld Diffraction, which is then utilized to demonstrate grating lobe-free beam steering from the optical phase array emitter with half-wavelength pitches. The half-wavelength pitch cannot demonstrate beam formation without any evanescent coupling blocking between emitters. Here, two index-mismatched silicon wires in the emitter array are proposed by the optical phase compensation through waveguide width adjustment, to avoid the complex and addressable thermal control on the phase shifters. Moreover, the same output optical waveguide mode needs to be further considered to demonstrate the grating lobe-free beam steering. In order to get the adiabatic connection between two different pitches between the phase shifter and emitter, an optical path equalization will also be applied.

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Tsybeskov, L., E. K. Lee, H. Y. Chang, B. V. Kamenev, D. J. Lockwood, J. M. Baribeau, and T. I. Kamins. "Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects." Advances in Optical Technologies 2008 (June 12, 2008): 1–16. http://dx.doi.org/10.1155/2008/218032.

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Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3–1.6 μm. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency.

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Ma, Qing Yu, Rui Fang Guan, and Guo Zhong Li. "Two Novel Tetrahedrally Silicon-Based Benzimidazole Derivatives: Potentials as Blue Emitters for OLEDs." Advanced Materials Research 306-307 (August 2011): 206–10. http://dx.doi.org/10.4028/www.scientific.net/amr.306-307.206.

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Two novel silicon-centered benzimidazole derivatives, Bis(4-(benzimidazol-1-yl)phenyl) dimethylsilane (1) and Bis(3-(benzimidazol-1-yl)phenyl)dimethylsilane (2) have been synthesized and determined by IR, 1H NMR, 13C NMR and mass spectroscopy. These compounds have high thermal stability and are fluorescent with emission in the region of violet to blue, which could be potentially applied as blue emitters in organic light-emitting diodes (OLEDs) display.

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Linder, K. K., J. Phillips, O. Qasaimeh, P. Bhattacharya, and J. C. Jiang. "In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates." Journal of Crystal Growth 201-202 (May 1999): 1186–89. http://dx.doi.org/10.1016/s0022-0248(99)00024-x.

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Xia, J. S., K. Nemoto, Y. Ikegami, Y. Shiraki, and N. Usami. "Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks." Applied Physics Letters 91, no. 1 (July 2, 2007): 011104. http://dx.doi.org/10.1063/1.2754356.

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Chaisakul, Papichaya, Vladyslav Vakarin, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, Laurent Vivien, and Delphine Marris-Morini. "Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects." Photonics 6, no. 1 (March 1, 2019): 24. http://dx.doi.org/10.3390/photonics6010024.

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Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.

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Грудинкин, С. А., Н. А. Феоктистов, К. В. Богданов, А. В. Баранов, and В. Г. Голубев. "Источники двухволнового узкополосного излучения на основе алмазных наночастиц с введенными одновременно центрами окраски германий-вакансия и кремний-вакансия." Письма в журнал технической физики 46, no. 17 (2020): 37. http://dx.doi.org/10.21883/pjtf.2020.17.49892.18320.

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Diamond particles with germanium-vacancy and silicon-vacancy color centers were synthesized by Hot Filament Chemical Vapor Deposition technique. The next step was the reactive ion-plasma etching of the particles. As a result, the diamond nanoparticles were obtained whose photoluminescence spectra consist of two narrow intense zero phonon lines of the embedded centers. Such fluorescent diamond nanoparticles are promising as dual-wavelength narrow-band light emitters for luminescent nanothermometry.

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Fait, Jan, Marián Varga, Karel Hruška, Zdeněk Remeš, Vlastimil Jurka, Alexander Kromka, Bohuslav Rezek, and Lukáš Ondič. "Maximized vertical photoluminescence from optical material with losses employing resonant excitation and extraction of photonic crystal modes." Nanophotonics 8, no. 6 (May 17, 2019): 1041–50. http://dx.doi.org/10.1515/nanoph-2019-0042.

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AbstractOptical losses of a host material together with the total internal reflection phenomenon can significantly reduce photoluminescence external quantum efficiency of embedded light-emitters. This is not only the case for light-emitting color centers in thin layers of nanocrystalline diamond, but also for silicon nanocrystals in silica dioxide matrices and for some types of perovskite materials. Here, we show that a significant boost (more than 100-fold enhancement) of the directional light emission efficiency from light-emitters in diamond can be achieved by using two-dimensional photonic crystal slabs (PhCs) to extract the light emission into vertical direction (resonant extraction) and at the same time to couple the excitation beam into the structure (resonant excitation). We have further shown that this so-called resonant extraction and excitation scheme provides the highest enhancement when the overlap between the electric field distribution of extraction leaky mode and the region of the excited light-emitters is maximized. This can be achieved by using the same type of the photonic mode for both extraction and excitation, and by optimizing the thickness of a diamond layer. The usage of the same type of modes appears to be more significant than tuning of the Q-factors of the excitation and extraction leaky modes individually. The results of our measurements are supported by the outputs of computer simulations. Our findings may be helpful in designing future PhCs for extraction of luminescence originating from various optoelectronic and sensor devices making use of the unique properties of the diamond. Moreover, our concept can be easily extended to other light-emitting materials with optical losses.

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Shmagin, V. B., S. N. Vdovichev, E. E. Morozova, A. V. Novikov, M. V. Shaleev, D. V. Shengurov, and Z. F. Krasilnik. "Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands." Semiconductors 50, no. 11 (November 2016): 1475–78. http://dx.doi.org/10.1134/s1063782616110245.

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Inglese, Alessandro, Hannu S. Laine, Ville Vähänissi, and Hele Savin. "Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation." AIP Advances 8, no. 1 (January 2018): 015112. http://dx.doi.org/10.1063/1.5012680.

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Glinka, Yu D., A. S. Zyubin, A. M. Mebel, S. H. Lin, L. P. Hwang, and Y. T. Chen. "Photoluminescence from mesoporous silica akin to that from nanoscale silicon: the nature of light-emitters." Chemical Physics Letters 358, no. 3-4 (May 2002): 180–86. http://dx.doi.org/10.1016/s0009-2614(02)00400-1.

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Gonzalez-Fernandez, Alfredo Abelardo, Joan Juvert, Mariano Aceves-Mijares, Andreu Llobera, and Carlos Dominguez. "Influence by Layer Structure on the Output EL of CMOS Compatible Silicon-Based Light Emitters." IEEE Transactions on Electron Devices 60, no. 6 (June 2013): 1971–74. http://dx.doi.org/10.1109/ted.2013.2258158.

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Rebohle, L., T. Gebel, R. A. Yankov, T. Trautmann, W. Skorupa, J. Sun, G. Gauglitz, and R. Frank. "Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications." Optical Materials 27, no. 5 (February 2005): 1055–58. http://dx.doi.org/10.1016/j.optmat.2004.08.062.

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Mehta, S. C., D. A. Smith, M. R. Libera, J. Ott, G. Tompa, and E. Forsythe. "Nucleation and growth of Si quantum nanocrystals in silicon-rich oxide films." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 234–35. http://dx.doi.org/10.1017/s0424820100163630.

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The observation of photoluminescence and electroluminescence in Si nanocrystals has generated renewed interest in these novel silicon based materials for their possible application as light emitters and detectors. Silicon Rich Oxide (SRO) films with a uniform dispersion of silicon nanocrystallites in a wider bandgap SiO2 matrix manifest electroluminescence and photoluminescence in the infrared and visible portions of the spectrum. Understanding the nucleation and growth kinetics of these crystallites in amorphous matrix is of critical importance in the fabrication of future optoelectronic devices. One route to the fabrication of Si nanocrystals is by the crystallization of amorphous SiO2-x. Consider the case when x=1. The reaction leading to the formation of Si crystallites can be written as;(1)The nucleation, growth and coarsening processes of Si nanocrystals each require bulk diffusion of Si atoms through the amorphous matrix.

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Khokhar, Megha, Nitesh Singh, and Rajesh V. Nair. "Stacked metasurfaces for enhancing the emission and extraction rate of single nitrogen-vacancy centers in nanodiamond." Journal of Optics 24, no. 2 (January 12, 2022): 024008. http://dx.doi.org/10.1088/2040-8986/ac3f95.

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Abstract Dielectric metasurfaces with unique possibilities of manipulating light–matter interaction lead to new insights in exploring spontaneous emission control using single quantum emitters. Here, we study the stacked metasurfaces in one- (1D) and two-dimensions (2D) to enhance the emission rate of a single quantum emitter using the associated optical resonances. The 1D structures with stacked bilayers are investigated to exhibit Tamm plasmon resonance optimized at the zero phonon line (ZPL) of the negative nitrogen-vacancy (NV−) center. The 2D stacked metasurface comprising of two-slots silicon nano-disks is studied for the Kerker condition at ZPL wavelength. The far-field radiation plots for the 1D and 2D stacked metasurfaces show an increased extraction efficiency rate for the NV− center at ZPL wavelength that reciprocates the localized electric field intensity. The modified local density of optical states results in large Purcell enhancement of 3.8 times and 25 times for the single NV− center integrated with 1D and 2D stacked metasurface, respectively. These results have implications in exploring stacked metasurfaces for applications such as single photon generation and CMOS compatible light sources for on-demand chip integration.

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Bornacelli, J., J. A. Reyes-Esqueda, L. Rodríguez-Fernández, J. L. Ruvalcaba-Sil, F. J. Jaimes, and A. Oliver. "Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals." Journal of Nanotechnology 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/863184.

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Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguide, source, and detectors). In this work, we present an approach based on implantation of Ag (or Au) ions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface). Once Si-NCs are formed inside the SiO2we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

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De Groote, Andreas, Paolo Cardile, Ananth Z. Subramanian, Alin M. Fecioru, Christopher Bower, Danae Delbeke, Roel Baets, and Günther Roelkens. "Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters." Optics Express 24, no. 13 (June 13, 2016): 13754. http://dx.doi.org/10.1364/oe.24.013754.

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Imamura, S., R. Watahiki, R. Miura, T. Shimada, and Y. K. Kato. "Optical control of individual carbon nanotube light emitters by spectral double resonance in silicon microdisk resonators." Applied Physics Letters 102, no. 16 (April 22, 2013): 161102. http://dx.doi.org/10.1063/1.4802930.

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Fauchet, Philippe M. "The integration of nanoscale porous silicon light emitters: materials science, properties, and integration with electronic circuitry." Journal of Luminescence 80, no. 1-4 (December 1998): 53–64. http://dx.doi.org/10.1016/s0022-2313(98)00070-2.

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Haws, Cori, Biswarup Guha, Edgar Perez, Marcelo Davanco, Jin Dong Song, Kartik Srinivasan, and Luca Sapienza. "Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters." Materials for Quantum Technology 2, no. 2 (April 19, 2022): 025003. http://dx.doi.org/10.1088/2633-4356/ac603e.

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Abstract The ability to combine different materials enables a combination of complementary properties and device engineering that cannot be found or exploited within a single material system. In the realm of quantum nanophotonics, one might want to increase device functionality by, for instance, combining efficient classical and quantum light emission available in III–V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate, and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. However, combining different materials on a single wafer is challenging and may result in low reproducibility and/or low yield. For instance, direct epitaxial growth requires crystal lattice matching for producing of defect-free films, and wafer bonding requires considerable and costly process development for high bond strength and yield. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes that contain InAs quantum dots and which have dimensions up to about 260 μm × 80 μm onto a gold-coated silicon substrate. We show that the presence of a back reflector combined with the etching of micropillars significantly increases the extraction efficiency of quantum light from a single quantum dot line, reaching photon fluxes exceeding 8 × 105 photons per second. This flux is four times higher than the highest count rates measured from emitters outside the pillars on the same chip. Given its versatility and ease of processing, this technique provides a path to realising hybrid quantum nanophotonic devices that combine virtually any material in which free-standing membranes can be made onto any host substrate, without specific compatibility issues and/or requirements.

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Pritchin, Sergey, Alexey Bobryshev, Aleksandr Sorokun, and Tymur Zhumatii. "SOFTWARE AND HARDWARE AUTOMATED CONTROL COMPLEX FOR THE FORMATION OF A CRACKED LAYER ON SEMICONDUCTOR PLATES." Transactions of Kremenchuk Mykhailo Ostrohradskyi National University, no. 6(131) (December 26, 2021): 128–32. http://dx.doi.org/10.30929/1995-0519.2021.6.128-132.

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Purpose. Porous silicon is widely used in devices such as light emitters, sensors, and medical devices. The quality of operation of these devices depends on the diameter of the pore, the uniformity of its surface, and the thickness of the layer. To control the characteristics of the porous layer, the current density, etching time, and current shape are changed. As a rule, the growth is carried out using a constant current density. In this case, hydrogen bubbles are formed in the pores with a simultaneous decrease in the etching rate, which leads to the formation of small pores. This limits the pos-sibility of obtaining porous silicon with a high degree of reproducibility. Methodology The research was carried out on a semiconductor wafer. After cleaning, the silicon wafers were etched in an electrochemical cell at room temperature. For the study, two types of etching current were used: current in the form of rectangular pulses with a variable duty cycle and direct current. For the pulsed current, the density was 20 mA/cm2, the duty cycle of the pulses varied from 40 to 80% at a frequency of 7 Hz. For direct current, the etching current density was 20 mA/cm2. The etching time in both experiments was 30 minutes. Findings. The paper shows the influence of the shape of the silicon etching current on the formation of a porous layer. To control the etching process, a hardware-software automated complex for controlling the formation of a porous layer on semiconductor wafers was developed. Originality. When using a pulsed current, the structure of the porous layer becomes more uniform, as evidenced by an increase in the intensity of the photolumines-cence spectrum at a wavelength of 650 nm. Practical value. The results of the work can be used in the development of such devices as light emitters, sensors and medical devices. Сonclusions The method of etching single-crystal silicon has been improved in order to obtain a porous layer having a uniform structure by using the etching current in the form of pulses with a duty cycle of 80% and a frequency of 7 Hz.

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Elizondo, L. A., Y. Li, A. Sow, R. Kamana, H. Z. Wu, S. Mukherjee, F. Zhao, Z. Shi, and P. J. McCann. "Optically pumped mid-infrared light emitter on silicon." Journal of Applied Physics 101, no. 10 (May 15, 2007): 104504. http://dx.doi.org/10.1063/1.2729467.

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Journal articles on the topic 'Light emitters in silicon'

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