Journal articles on the topic 'Lifted-off films'
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1
Fan, J. C., C. P. Lee, C. M. Tsai, S. Y. Wang, and J. S. Tsang. "Optical and structural properties of epitaxially lifted-off GaAs films." Journal of Applied Physics 83, no. 1 (January 1998): 466–68. http://dx.doi.org/10.1063/1.366662.
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Jiang, De-Sheng, Xue-Ping Li, Bao-Quan Sun, and He-Xiang Han. "A Raman scattering study of GaAs : As films lifted off GaAs substrate." Journal of Physics D: Applied Physics 32, no. 6 (January 1, 1999): 629–31. http://dx.doi.org/10.1088/0022-3727/32/6/005.
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Mateo, Cherry May N., Alipio T. Garcia, Flo Rykiel M. Ramos, Kristine I. Manibog, and Arnel A. Salvador. "Strain-induced splitting of the valence band in epitaxially lifted-off GaAs films." Journal of Applied Physics 101, no. 7 (April 2007): 073519. http://dx.doi.org/10.1063/1.2716869.
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Slaughter, Liane S., Kevin M. Cheung, Sami Kaappa, Huan H. Cao, Qing Yang, Thomas D. Young, Andrew C. Serino, et al. "Patterning of supported gold monolayers via chemical lift-off lithography." Beilstein Journal of Nanotechnology 8 (December 8, 2017): 2648–61. http://dx.doi.org/10.3762/bjnano.8.265.
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The supported monolayer of Au that accompanies alkanethiolate molecules removed by polymer stamps during chemical lift-off lithography is a scarcely studied hybrid material. We show that these Au–alkanethiolate layers on poly(dimethylsiloxane) (PDMS) are transparent, functional, hybrid interfaces that can be patterned over nanometer, micrometer, and millimeter length scales. Unlike other ultrathin Au films and nanoparticles, lifted-off Au–alkanethiolate thin films lack a measurable optical signature. We therefore devised fabrication, characterization, and simulation strategies by which to interrogate the nanoscale structure, chemical functionality, stoichiometry, and spectral signature of the supported Au–thiolate layers. The patterning of these layers laterally encodes their functionality, as demonstrated by a fluorescence-based approach that relies on dye-labeled complementary DNA hybridization. Supported thin Au films can be patterned via features on PDMS stamps (controlled contact), using patterned Au substrates prior to lift-off (e.g., selective wet etching), or by patterning alkanethiols on Au substrates to be reactive in selected regions but not others (controlled reactivity). In all cases, the regions containing Au–alkanethiolate layers have a sub-nanometer apparent height, which was found to be consistent with molecular dynamics simulations that predicted the removal of no more than 1.5 Au atoms per thiol, thus presenting a monolayer-like structure.
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Ren, Fang, Bingyao Liu, Zhaolong Chen, Yue Yin, Jingyu Sun, Shuo Zhang, Bei Jiang, et al. "Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer." Science Advances 7, no. 31 (July 2021): eabf5011. http://dx.doi.org/10.1126/sciadv.abf5011.
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Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems.
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Kim, Sunjung. "Effect of Residual Stress of Thin and Thick Layers on Laser Lifted-Off Light Emitting Diodes." Journal of The Electrochemical Society 158, no. 9 (2011): H904. http://dx.doi.org/10.1149/1.3610360.
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Tay, L., N. L. Rowell, D. Poitras, J. W. Fraser, D. J. Lockwood, and R. Boukherroub. "Bovine serum albumin adsorption on passivated porous silicon layers." Canadian Journal of Chemistry 82, no. 10 (October 1, 2004): 1545–53. http://dx.doi.org/10.1139/v04-129.
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Hydrogen-terminated porous silicon (pSi-H) films were fabricated through electrochemical anodization of crystalline silicon in hydrofluoric-acid-based solutions. The pSi-H surface was chemically functionalized by thermal reaction with undecylenic acid to produce an organic monolayer covalently attached to the silicon surface through SiC bonds and bearing an acid terminal group. Bovine serum albumin (BSA) was adsorbed onto such surface-modified pSi structures. The resulting surfaces were characterized using scanning electron microscopy (SEM), reflection FT-IR spectroscopy, and ellipsometry. SEM showed that the porous films were damaged and partially lifted off the silicon substrate after a prolonged BSA adsorption. Ellipsometry analysis revealed that the BSA penetrated ∼1.3 µm into the porous structure. The film damage is likely a result of BSA anchoring itself tightly through strong electrostatic interaction with the acid-covered Si sidewalls. A change in surface tension during BSA film formation then causes the pSi layer to buckle and lift off the underlying Si substrate. FT-IR results from the undecylenic-acid-modified pSi surfaces before and after BSA adsorption showed the presence of strong characteristic amide I, II, and III vibrational bands after BSA adsorption. The surface properties of the pSi matrix and its interactions with BSA are examined in this study.Key words: ellipsometry, porous silicon, protein adsorption, surface passivation.
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Chen, You, Zijing Quan, Yuhan Sun, Deqiang Chi, Delei Liu, Liang Zhou, Junqiu Zhang, et al. "Durable and Superhydrophobic Aluminium Alloy with Microscale Hierarchical Structures and Anti-Drag Function Inspired by Diving Bell Spider." Coatings 11, no. 10 (September 22, 2021): 1146. http://dx.doi.org/10.3390/coatings11101146.
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Coating materials with special surface wettability are widely applied in marine paint systems used in the naval industry to reduce the corrosion and viscous drag of seawater. However, traditional coatings are inefficient and limited, either by poor durability or insufficient anti-drag capacity. Here, inspired by the diving bell spider, a bionic superhydrophobic coating with multiscale hierarchical architecture was successfully prepared on the surface of aluminium alloy. It possesses excellent mechanical abrasion durability, chemical durability, and low adhesion. Remarkably, the water contact angles could remain over 150.9° after more than 15 abrasion cycles or strong acid/alkali conditions. In addition, the impacting water droplet lifted off the surface of bionic superhydrophobic aluminium alloy (BSAA) within 13 ms, illustrating an excellent low adhesion property. In fact, when the BSAA is immersed in water, it could absorb bubbles and form a gas membrane. The existence of the gas membrane could prevent water and anaerobic organisms from contacting and even corroding the BSAA. Meanwhile, the gas membrane acts as a lubricant and significantly deceases friction at the solid–liquid interface, reducing the drag for BSAA. The BSAA proposed in this work has broad application prospects, such as medical devices, microfluidic chips, gas separation and collection in water.
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Ramadan, Rehab, Vicente Torres-Costa, and Raúl J. Martín-Palma. "Fabrication of Zinc Oxide and Nanostructured Porous Silicon Composite Micropatterns on Silicon." Coatings 10, no. 6 (May 30, 2020): 529. http://dx.doi.org/10.3390/coatings10060529.
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The luminescent properties of zinc oxide (ZnO) and nanostructured porous silicon (PSi) make these materials very appealing for photoemission applications. The current study reports on the fabrication of a composite of ZnO and nanostructured porous silicon micropatterns (ZnO + PSi micropatterns) onto heavily-doped silicon surfaces. The proposed composite micropattern is devoted to the future development of light-emitting diodes. The fabrication of the ZnO + PSi micropatterns was carried out in a two–step process. (1) A regular hexagonal micropattern of a photoresist/ZnO stack was fabricated by UV lithography on crystalline silicon substrates. (2) Before being lifted off the photoresist, nanostructured PSi micropatterns were fabricated by electrochemically etching the exposed areas of the silicon substrate. Subsequently, wet etching of the photoresist was carried out for the final development of the composite ZnO and PSi micropatterns. Further, thin films of ZnO and nanostructured PSi layers were characterized. In particular, their photoluminescent properties were analyzed, as well as their morphology and composition. The experimental PL results show that the ZnO layers have emission broadbands centered at (2.63 eV, blue), while the PSi layers show a band centered at (1.71 eV, red). Further, the emission peaks from the PSi layers can be tuned by changing their fabrication conditions. It was observed that the properties of the ZnO thin films are not influenced by either the surface morphology of PSi or by its PL emissions. Therefore, the PL properties of the composite ZnO + PSi micropatterns are equivalent to those featuring the addition of PSi layers and ZnO thin films. Accordingly, broadband optical emissions are expected to arise from a combination between the ZnO layer (blue band) and PSi (red band). Furthermore, the electrical losses associated with the PSi areas can be greatly reduced since ZnO is in contact with the Si surface. As a result, the proposed composite micropatterns might be attractive for many solid-state lighting applications, such as light-emitting diodes.
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Wu, Junwen, Wenfeng Jia, and Chenggang Xian. "Foaming Agent Developed for Gas Wells with Liquid Loading Problem Using New Surfactant and Nanotechnology." SPE Journal 25, no. 06 (July 13, 2020): 3138–44. http://dx.doi.org/10.2118/201249-pa.
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Summary Liquid buildup in the wellbore is one of the major causes of production decline in gas wells, in which case additional energy is needed to drain off the liquid to solve this problem. Foaming agents offer a method to reduce the liquid density to make it easier to be lifted with the gas flow, unloading the accumulated liquid in gas wells. The main ingredient of foaming agents are surfactants. Foam stability is influenced by several factors, such as salinity, temperature, and pressure, so a foaming stabilizer is usually needed for a foam system. A foaming agent should be developed to form stable foams in the presence of a salt or sweet-water hydrocarbon phase at a given temperature and pressure. Recently, various kinds of foaming agents have been developed and discussed. Previous studies mainly focused on the complex interaction between an anionic surfactant and amphoteric ion surfactant; however, stability of the foam system formed by these foaming agents needs to be further improved (Nikolai et al. 2009). Therefore, development of a novel foaming agent with improved stability is necessary, especially for the application under downhole conditions. The complex interaction between the anionic and cationic surfactants is neglected in previous research. For example, the synergies between the anionic and cationic surfactants with appropriate methods can greatly improve the foam stability compared with the one-component system. A complex phase behavior and microstructure that has a high surface activity and foam stability can be obtained by the strong electrostatic interaction between the opposite charge ionic head groups and the hydrophobic interaction between the hydrocarbon groups. A gemini surfactant with a spacer can make the molecules pack tighter and increase the surfactant cohesion within the monolayer, which can greatly enhance the foam stability. The liquid film of foam formed by the surfactant is dynamically unstable because the liquid film cannot prevent the diffusion of gas, and the foam will burst quickly. However, solid films with particles adsorbed in the gas/water interface can weaken the foam drainage speed, so that the foam stability is greatly enhanced. In summary, a robust foaming agent is developed with the introduction of an anionic-nonionic surfactant complexed with a gemini cationic surfactant; moreover, nanoparticles with a certain hydrophilicity and size are also adopted as stabilizers.
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Kempa, Stefan, Wolfgang Friz, Florian Gaul, Ellen Habig, Laurence J. Gregoriades, and Roger Massey. "Investigation of a Proactive Glass Filler Removal in IC Substrate Build Up Films and its Effect on Topography and Copper Adhesion Reliability." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 000453–73. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp2_037.
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Across all areas within the electronics industry, there is a general trend to push for a smaller footprint and reduce unit size where ever possible. Printed Circuit Board (PCB) production is not exempt from this trend and one of the major challenges facing the industry is the drive to produce an ever increasing interconnect density. While there is a wide range of dielectric materials available to PCB designers, due to their well-balanced properties, the materials of choice often remain those based on epoxy based resins. However for high end applications, where the ability to produce interconnects of the desired size, in combination with other target properties is critical, there has been a switch away from woven glass reinforcement towards a system based on glass particles. Such spheres, typically with diameters in the order of microns, allow for improved thermal expansion control within the final board, and due to their small size also enable smoother surface topographies when compared to the previous glass fibre reinforced materials. Irrespective of the reinforcement system utilized, the desmear operation, which is widely used during the electroless Copper process, can expose the filler material, and especially in the case of the glass sphere fillers, can lead to a reduction in their anchoring in the surrounding resin matrix, which may result with reduced adhesion and potentially blistering of the deposited electroless Copper layer. The use of hydrofluoric acid, is a recognized industrial method for removal of glass fillers, however in addition to the health concerns posed by its use, it has been shown in previous studies, that a complete dissolution of surface exposed glass fillers creates a sponge like structure, which leads to a reduced overall rigidity. This paper presents a wet chemical approach that is not based on hydrofluoric acid, as a means of removal of exposed glass reinforcement materials, and examines its effect on the surface topography prior to Copper plating and on the final Copper adhesion on commonly used substrate build up films. We describe an increased Copper to substrate adhesion where a less drastic means of attacking the glass fillers is employed and propose an explanation by less residual glass fillers on the surface which are easily lifted off by the plated Cu-film. In addition, we show that crevices are created between the remaining surface exposed glass fillers and their surrounding resin matrix, which after being filled during plating act as anchoring points, thus increasing overall adhesion between the dielectric and overlying Copper layer. For commonly used base materials a significant improvement of the blister performance, as well as an enhanced Copper to substrate adhesion was observed. It is clearly understood that the absolute value of peel strength is dependent upon surface topography, which in turn is influenced by the resin curing conditions and the applied desmear process. Nevertheless, we have obtained adhesion improvements through glass filler removal on a number of base materials with a wide range of surface roughness. Typically used within advanced substrate designs, the cleaning of blind micro vias is of paramount importance, and the removal of glass fillers from such features is a challenging task. Within this work, we have shown that the use of additives within the process chemistry can impact the solution exchange within these features so that glass filler removal therein is optimized. Thus, besides increasing Copper to resin adhesion, the employed chemical treatment also facilitates the creation of inner layer connectivity and aids in their final reliability performance.
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Dalberth, M. J., J. C. Price, and C. T. Rogers. "Epitaxial lift-off of strontium titanate thin films and the temperature dependence of the low frequency dielectric properties of the films." MRS Proceedings 493 (1997). http://dx.doi.org/10.1557/proc-493-371.
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ABSTRACTUsing pulsed laser ablation, we have grown epitaxial bilayers of strontium titanate (STO) and yttrium barium copper oxide (YBCO) on lanthanum aluminate (LAO) and neodymium gallate (NGO) substrates. Using a selective acid etch, we have removed the YBCO from the middle of the bilayer and lifted off the strontium titanate films from their parent substrates. Using coplanar interdigital capacitors patterned on the films' surface, we have measured the dielectric constant and loss as a function of frequency and temperature and have resolved frequency dependent loss peaks which indicate thermally activated behavior. Also, by applying a dc bias to the capacitor, we have seen tuning of the lifted off films' dielectric constants that compares favorably to films attached to substrates.
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Posthill, J. B., D. P. Malta, T. P. Humphreys, G. C. Hudson, R. E. Thomas, R. A. Rudder, and R. J. Markunas. "Fabrication of a Free-Standing, Synthetic, Single Crystal Diamond Plate Using Ion Implantation and Plasma-Enhanced Chemical Vapor Deposition." MRS Proceedings 388 (1995). http://dx.doi.org/10.1557/proc-388-299.
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AbstractUsing a specific combination of energetic and chemical processes we have grown homoepitaxial diamond on and lifted it off of a type Ia natural C(100) crystal. Before growth, the C(100) crystal is exposed to a self implant of 190keV energy and dose of 1E16 cm-2. Low temperature (~600°C) homoepitaxial diamond growth conditions were used that are based on water-alcohol source chemistries. To achieve layer separation (lift-off), samples were annealed to a temperature sufficient to graphitize the buried implant-damaged region. Contactless electrochemical etching was found to remove the graphite, and a transparent synthetic (100) single crystal diamond plate of 17.5μm thickness was lifted off. This free-standing diamond single crystal plate was characterized and found to be comparable to homoepitaxial films grown on unimplanted single crystal diamond.
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Zhang, Bowen, Chao Yun, and Judith L. MacManus-Driscoll. "High Yield Transfer of Clean Large-Area Epitaxial Oxide Thin Films." Nano-Micro Letters 13, no. 1 (January 2021). http://dx.doi.org/10.1007/s40820-020-00573-4.
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AbstractIn this work, we have developed a new method for manipulating and transferring up to 5 mm × 10 mm epitaxial oxide thin films. The method involves fixing a PET frame onto a PMMA attachment film, enabling transfer of epitaxial films lifted-off by wet chemical etching of a Sr3Al2O6 sacrificial layer. The crystallinity, surface morphology, continuity, and purity of the films are all preserved in the transfer process. We demonstrate the applicability of our method for three different film compositions and structures of thickness ~ 100 nm. Furthermore, we show that by using epitaxial nanocomposite films, lift-off yield is improved by ~ 50% compared to plain epitaxial films and we ascribe this effect to the higher fracture toughness of the composites. This work shows important steps towards large-scale perovskite thin-film-based electronic device applications.
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Dalberth, M. J., J. C. Price, and C. T. Rogers. "Dielectric Response of free Standing Strontium Titanate Thin Films from 10 Khz to 1 Ghz as A Function of Temperature and Applied Voltage." MRS Proceedings 574 (1999). http://dx.doi.org/10.1557/proc-574-299.
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AbstractUsing pulsed laser ablation, we have grown epitaxial bilayers of strontium titanate (STO) and yttrium barium copper oxide (YBCO) on (110) neodymium gallate (NGO) substrates. Using a selective acid etch, we have removed the YBCO from the middle of the bilayer and lifted off the STO films from their parent substrates. Using coplanar interdigital capacitors patterned on the surface of the films, we have measured the capacitance and loss as a function of frequency (from 10 kHz to 1 GHz), temperature (from 300 K to 4 K), and applied electric field (up to roughly 2 V/μm). We have seen frequency dependent loss peaks in the films that indicate thermally activated behavior, and an improvement in the tuning quality.
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Kondoleon, Caroline A., and Thomas F. Marinis. "Issues with Gold Electroplating for Microelectromechanical System Applications." MRS Proceedings 687 (2001). http://dx.doi.org/10.1557/proc-687-b5.18.
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AbstractElectro-plated gold films are used extensively in packaging of MEM sensors to make connections to signal conditioning electronics. Over the past two years, production lots of gold plated substrates, procured from various vendors, failed an accelerated aging qualification test. In this test, 0.0025 [mm] diameter aluminum wires were ultrasonically welded to the film, aged at 120°C for 48 hours, and then pulled to destruction. The criterion for passing this test was that the wires should break both before and after aging. In the defective lots, the wires lifted off of the gold film after aging. Analysis of these defective films by SEM, Auger, and TOF-SIMS suggested that residues, deposited from the plating bath, concentrated beneath the bond as the gold and aluminum reacted to form an inter-metallic compound during aging. A combination, etch and cleaning treatment was developed for defective substrates, which removed a sufficient amount of residues from the gold to pass the qualification test.
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Chua, Daniel H. C., W. I. Milne, L. J. Yu, D. Sheeja, and B. K. Tay. "Fabrication and Simulation of Amorphous Carbon Cantilever Structures." MRS Proceedings 773 (2003). http://dx.doi.org/10.1557/proc-773-n3.2.
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AbstractIn view of the superior bio-compatibility of amorphous carbon (a-C) films, a study has been carried out on the fabrication and simulation of free-standing amorphous carbon microcantilevers. The fabrication of micro-structure was carried out by a single photolithography step. A 1.7micro-meter thick, low stress, smooth (Rrms ∼0.75nm) a-C films were deposited by filtered cathodic vacuum arc deposition (FCVA) system, in conjunction with high substrate pulse biasing on patterned n-doped Si >100< substrates. Subsequently, the photoresist was lifted-off in acetone and which is followed by undercutting of the cantilever structures in 40% KOH solution. The deflection of the free-standing cantilever structures was measured using an optical profiler, and the stress in the a-C cantilever structures was independently calculated from the deflection of the cantilever beam and the total tilt angle. This stress value is compared with the stress in the film measured from the film-substrate sandwich by radius of curvature technique. Simulation of the cantilever assembly was carried out to obtain the deflection and stress distribution. The simulated parameters are compared with the experimental results.
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Yun, F., H. Morkoc, D. L. Rode, K. T. Tsen, L. Farina, C. Kurdak, S. S. Park, and K. Y. Lee. "Analysis of Electron Transport in a High-Mobility Freestanding GaN Substrate Grown by Hydride Vapor-Phase Epitaxy." MRS Proceedings 680 (2001). http://dx.doi.org/10.1557/proc-680-e2.2.
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ABSTRACTSemiconductor nitrides grown on substrates with a large lattice mismatch typically contain extended and point defects that prevent the full potential of this material system from being attained. Among allthe substrate options explored so far, freestanding GaN templates appear ideal for homoepitaxial growth of GaN films. To this end, hydride vapor-phase epitaxial (HVPE) grown GaN templates with a thickness of more than 200 μm were thermally lifted off from the sapphire substrate and mechanically polished. The defect densityof such a template is expected to be non-uniform in the growth direction, especially near the back surface which was in close vicinity of the sapphire substrate. We, therefore, studied the transport properties of this template before and after the removal of a 30 μm region from the back-side. For as-prepared GaN, Hall mobilities of 1100 cm2/V-s and 6800 cm2/V-s were obtained at 295 K and 50 K, respectively. A simultaneous fitting of mobility and carrier concentration was used to quantify the contribution ofdifferent scattering mechanisms. When the backside was etched by ∼30 μm, Hall mobilities improved to 1200 cm2/V-s at 295 K and 7385 cmsup2/V-s at 48 K, respectively. A numerical solution of the Boltzmann transport equation (BTE) that deals with the inelastic nature of electron scattering by polar optical mode was employed to determine the acceptor concentration. Raman spectroscopy was employed to obtain LO and TO phonon energies, which were then used in the above-mentioned calculations. The best fittings of the mobility and carrier concentration data yield an average acceptor concentration of 4.9×1015 cm-3 and a donor concentration of 2.1×1016 cm-3 for the as-prepared GaN. The average acceptor concentration decreased to 2.4×1015 cm-3 after etching of the backside, which confirms that the etched-away region contained higher density of defects. The donor activation energy is derived to be 25.2 meV. Our analysis demonstrated high quality of the freestanding GaN substrate with the highest reported electron mobility for wurtzite GaN.