Journal articles: 'Leakage Current Density'

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Kawahara, Takamitsu, Naoki Hatta, Kuniaki Yagi, Hidetsugu Uchida, Motoki Kobayashi, Masayuki Abe, Hiroyuki Nagasawa, Bernd Zippelius, and Gerhard Pensl. "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC." Materials Science Forum 645-648 (April 2010): 339–42. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.339.

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The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing between a SF and the edge of p-well region; where the maximum electric field is induced. The mechanism of the leakage current is discussed in detail in a separate paper.

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Tamada, Minoru, Yuji Noguchi, and Masaru Miyayama. "Defects and Leakage Current in PbTiO₃ Single Crystals." Key Engineering Materials 350 (October 2007): 77–80. http://dx.doi.org/10.4028/www.scientific.net/kem.350.77.

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Single crystals of PbTiO3 (PT) were grown by a self flux method, and effects of lattice defects on the leakage current properties were investigated. While PT crystals annealed in air at 700 oC showed a leakage current density of the order of 10-5 A/cm2, annealing under a high oxygen partial pressure of 35 MPa increased leakage current density to 10-4 A/cm2. The increase in leakage current by the oxidation treatment provides direct evidence that electron hole is a detrimental carrier for the leakage current property of PT at room temperature. The vacancies of Pb are suggested to act as an electron acceptor for generating electron holes.

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Kim, Hyung Chul, Moon Seob Han, Hyun June Park, Dong Uk Jang, Gyung Suk Kil, and Nirmal Kumar Nair. "Consideration of Uncertainty in Diagnosis for Railway Arrester." Key Engineering Materials 321-323 (October 2006): 1507–12. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1507.

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This paper presents a method for diagnosis of railway arrester considering uncertainty. Arresters, a protective device that prevents damage due to transient voltages, deteriorate due to the absorption of moisture, repetitive operation during over-voltages and manufacturing defects. Various diagnostic techniques are available for monitoring deterioration of arresters. The technique based on the amplitude of leakage current measures the root mean square or peak values of leakage current components. After measuring the total leakage current, harmonics of leakage current components are analyzed by using a microprocessor based device. The level of leakage current is indicative of the arrester conditions. Harmonics of leakage current components occur due to nonlinear characteristics of railway arrester. Since leakage current contains uncertainty characteristics of power source, the probability density functions of leakage current components can be obtained for ZnO arrester. This paper presents a probabilistic approximation method for the harmonic currents analysis in diagnosis for railway arresters. Mean and variance of harmonic currents in railway system are obtained based on leakage current components. These statistical measures can be helpful to reduce the diagnostic error for railway arrester.

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Ishikawa, Tsuyoshi, T. Katsuno, Y. Watanabe, H. Fujiwara, and T. Endo. "Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode." Materials Science Forum 717-720 (May 2012): 371–74. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.371.

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We investigate the influence of SiC surface morphology on increase and variability in reverse leakage current of SiC Schottky barrier diodes using device simulation. It is found that etch pits with only a few tens of nm in depth has a large influence on leakage current and is also shown that leakage current is sensitive to both etch pit shape and density. From these results, we suggest the critical density of nanoscale pit, which is suppressing the variability of leakage current, at various drift layer thickness tdrift and doping concentration Ndrift.

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Hirokazu, Fujiwara, T. Katsuno, Tsuyoshi Ishikawa, H. Naruoka, Masaki Konishi, T. Endo, Y. Watanabe, et al. "Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes." Materials Science Forum 717-720 (May 2012): 911–16. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.911.

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The impact of threading dislocation density on the leakage current of reverse IV characteristics in 1.2 kV Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs), and PN junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. For example, the correlation in SBDs is strong, but weak in PNDs. The threading dislocations were found to be in the same location as the current leakage points in the SBDs, but not in the PNDs. Nano-scale inverted cone pits were observed at the Schottky junction interface in SBDs, and it was found that leakage current increases in these diodes due to the concentration of electric fields at the peaks of the pits. These nano-scale pits were also observed directly above threading dislocations. In addition, this study succeeded in reducing the leakage current variation of 200 A-class JBSDs and SBDs by eliminating the nano-scale pits above the threading dislocations. As a result, a theoretical straight-line waveform was achieved.

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Uno, Shigeyasu, Kazuaki Deguchi, Yoshinari Kamakura, and Kenji Taniguchi. "Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current." Japanese Journal of Applied Physics 41, Part 1, No. 4B (April 30, 2002): 2645–49. http://dx.doi.org/10.1143/jjap.41.2645.

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Kim, Hyojung, Jongwoo Park, Junehwan Kim, Nara Lee, Gaeun Lee, Soonkon Kim, Pyungho Choi, Dohyun Beak, Jangkun Song, and Byoungdeog Choi. "Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1966–70. http://dx.doi.org/10.1166/jnn.2021.18901.

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Use of thinner oxides to improve the operating speed of a complementary metal-oxidesemiconductor (CMOS) device causes serious gate leakage problems. Leakage current of the dielectric analysis method has I–V, C–V, and charge pumping, but the procedure is very complicated. In this premier work, we analyzed the leakage current of metal insulator semiconductor (MIS) capacitors with different initiators through low-frequency noise (LFN) measurement with simplicity and high sensitivity. The LFN measurement results show a correlation between power spectral density (SIG) and gate leakage current (IG). MIS capacitors of hafnium zirconium silicate (HZS, (HfZrO4)1-x (SiO2)x) were used for the experiments with varying SiO2 ratio (x = 0, 0.1, 0.2) of hafnium zirconium oxide (HZO, HfZrO4). As the SiO2 ratio increased, the leakage current decreased according to J–V measurement. Further, the C–V measurement confirmed that the oxide-trapped charge (Not) increased with increasing SiO2 ratio. Finally, the LFN measurement method revealed that the cause of leakage current reduction was trap density reduction of the insulator.

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Negara, I. Made Yulistya, I. G. N. Satriyadi Hernanda, Dimas Anton Asfani, Mira Kusuma Wardani, Bonifacius Kevin Yegar, and Reynaldi Syahril. "Effect of Seawater and Fly Ash Contaminants on Insulator Surfaces Made of Polymer Based on Finite Element Method." Energies 14, no. 24 (December 20, 2021): 8581. http://dx.doi.org/10.3390/en14248581.

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Polymer is an insulating substance that has become increasingly popular in recent years due to its benefits. Light density, superior dielectric and thermal properties, and water-resistant or hydrophobic properties are only a few of the benefits. The presence of impurities or pollutants on the insulator’s surface lowers its dielectric capacity, which can lead to current leakage. The influence of seawater and fly ash pollutants on the distribution of the electric field and the current density of the insulator was simulated in this study. The finite element method was used to execute the simulation (FEM). Polymer insulators are subjected to testing in order to gather current leakage statistics. The tested insulator is exposed to seawater pollution, which varies depending on the equivalent salt density deposit value (ESDD). The pollutant insulator for fly ash varies depending on the value of non-soluble deposit density (NSDD). The existence of a layer of pollutants increased the value of the electric field and the value of the surface current density, according to the findings. Both in simulation and testing, the ESDD value of seawater pollutants and the NSDD value of fly ash contaminants influenced the value of the leakage current that flowed. The greater the ESDD and NSDD values are, the bigger the leakage current will be.

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9

Geng, Kuiwei, Ditao Chen, Quanbin Zhou, and Hong Wang. "AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer." Electronics 7, no. 12 (December 10, 2018): 416. http://dx.doi.org/10.3390/electronics7120416.

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Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.

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10

Albertin, Katia F., M. A. Valle, and I. Pereyra. "Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric." Journal of Integrated Circuits and Systems 2, no. 2 (November 18, 2007): 89–93. http://dx.doi.org/10.29292/jics.v2i2.272.

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MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and characterized. TiO2 films where physical characterized by Rutherford Backscattering, Fourier TransformInfrared Spectroscopy and Elipsometry measurements. Capacitance-voltage (1MHz) and current voltage measurements were utilized to obtain, the effective dielectric constant, effective oxide thickness (EOT), leakage current density and interface quality. The results show that the obtained TiO2 films present a dielectric constant of approximately 40, a good interface quality with silicon and a leakage current density, of 70 mA/cm2 for VG = 1V, acceptable for high performance logic circuits and low power circuits fabrication, indicating that this material is a viable substitute for current dielectric layers in order to prevent tunneling currents.

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11

Sikula, J., J. Hlavka, J. Pavelka, V. Sedlakova, L. Grmela, M. Tacano, and S. Hashiguchi. "Low Frequency Noise of Tantalum Capacitors." Active and Passive Electronic Components 25, no. 2 (2002): 161–67. http://dx.doi.org/10.1080/08827510212341.

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A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model ofTa−Ta2O5−MnO2MIS structure was used to give physical interpretation of VA characteristic both in normal and reverse modes. The self-healing process based on the high temperatureMnO2−Mn2O3transformation was studied and its kinetic determined on the basis of noise spectral density changes. The correlation between leakage current and noise spectral density was evaluated and noise reliability indicator was suggested. In normal mode the noise spectral density at rated voltage increases with second power of current and it varies within two decades for given leakage current value. In reverse mode there is only weak correlation and for given applied voltage, the leakage current for all ensemble varies only by one order, whereas the noise spectral density of the same samples spread in five orders.

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12

Hirokazu, Fujiwara, Masaki Konishi, T. Ohnishi, T. Nakamura, Kimimori Hamada, T. Katsuno, Y. Watanabe, et al. "Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density." Materials Science Forum 679-680 (March 2011): 694–97. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.694.

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The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.

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13

Chen, Zhisheng, Renjun Song, Qiang Huo, Qirui Ren, Chenrui Zhang, Linan Li, and Feng Zhang. "Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array." Micromachines 12, no. 6 (May 26, 2021): 614. http://dx.doi.org/10.3390/mi12060614.

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Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D VRRAM was based on the write and read margin. However, the leakage current (LC) of the 3-D VRRAM array is a concern as well. Excess leakage currents not only reduce the read/write tolerance and liability of the memory cell but also increase the power consumption of the entire array. In this article, a 3-D circuit HSPICE simulation is used to analyze the impact of the array size and operation voltage on the leakage current in the 3-D VRRAM architecture. The simulation results show that rapidly increasing leakage currents significantly affect the size of 3-D layers. A high read voltage is profitable for enhancing the read margin. However, the leakage current also increases. Alleviating this conflict requires a trade-off when setting the input voltage. A method to improve the array read/write efficiency is proposed by analyzing the influence of the multi-bit operations on the overall leakage current. Finally, this paper explores different methods to reduce the leakage current in the 3-D VRRAM array. The leakage current model proposed in this paper provides an efficient performance prediction solution for the initial design of 3-D VRRAM arrays.

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14

Nurbaya, Z., and M. Rusop. "Low Leakage Current Density Behaviour of Nanofilms PbTiO3 Based MIM Capacitor." Advanced Science Letters 20, no. 10 (October 1, 2014): 2258–63. http://dx.doi.org/10.1166/asl.2014.5712.

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15

Wöhler, Franziska J., Ingo Münch, and Werner Wagner. "Electric leakage current density in phase field simulations for nanogenerator concepts." PAMM 17, no. 1 (December 2017): 575–76. http://dx.doi.org/10.1002/pamm.201710257.

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16

In, Tae-Gyoung, Sunggi Baik, and Sangsub Kim. "Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering." Journal of Materials Research 13, no. 4 (April 1998): 990–94. http://dx.doi.org/10.1557/jmr.1998.0139.

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The effects of Al and Nb doping on the leakage current behaviors were studied for the Ba0.5Sr0.5TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si(100) substrate by rf magnetron sputtering. Al and Nb were selected as acceptor and donor dopants, respectively, because they have been known to replace Ti-sites of the BST perovskite. The BST thin films prepared in situ at elevated temperatures showed relatively high leakage current density and low breakdown voltage. However, the BST thin films deposited at room temperature and annealed subsequently in air showed improved electrical properties. In particular, the leakage current density of the Al-doped BST thin film was measured to be around 10−8 A/cm2 at 125 kV/cm, which is much lower than those of the undoped or Nb-doped thin films. The results suggest that the Schottky barriers at grain boundaries in the film interior could determine the leakage behavior in the BST thin films.

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Yu, Tong, Yun Liu, Binbin Huang, Xiaoyang Chen, and Ping Yu. "Modulating multiple leakage current mechanisms in the [LaNiO₃/Ba_0.67Sr_0.33TiO₃]₃ multilayer heterostructure thin films via dielectrics/electrode interface modifications." AIP Advances 12, no. 12 (December 1, 2022): 125309. http://dx.doi.org/10.1063/5.0129495.

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Ferroelectric (FE) multilayer heterostructure films have attracted significant attention due to their superior dielectric performance, which shows increasing opportunities in the application of energy storage capacitors or high-capacitance density systems. However, the leakage current density in FE multilayer heterostructure thin films is closely linked to the thickness of each single FE layer and the number of hetero-structure interfaces. In Pt/[LaNiO3/Ba0.67Sr0.33TiO3]3 (Pt/[LNO/BST]3) multilayer thin films, the dominant leakage current mechanism is Poole–Frenkel (PF) emission at room temperature. The space charge limited current (SCLC) and the co-dominated leakage current mechanism from the PF and Schottky (SC) emissions were observed under higher operating temperatures. After inserting an ultrathin SrTiO3 (STO) layer between the Pt/[LNO/BST]3 multilayer thin films and the top Au electrode, the SCLC region was replaced by an Ohmic region, and the SC emission was not detected in the temperature range of 288–368 K. Moreover, the calculated zero-field energy barriers ϕPF of PF emission are higher than the prepared multilayer thin films without the STO layer. Consequently, the leakage current density of Pt/[LNO/BST]3 thin films showed a significant decrease.

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Voitsekhovskii, A. V., S. N. Nesmelov, S. M. Dzyadukh, S. A. Dvoretsky, N. N. Mikhailov, G. Yu Sidorov, and M. V. Yakushev. "Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave inred detectors." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 5 (2021): 3–8. http://dx.doi.org/10.17223/00213411/64/5/3.

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Two types of long-wave infrared nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been fabricated. For each type of device, the side walls of the mesa structures were passivated with an Al2O3 dielectric film or left without passivation. The CdTe content in the absorbing layers was 0.20 and 0.21, and in the barrier layers, 0.61 and 0.63. The dark currents of the manufactured devices were studied in a wide range of voltages and temperatures. The values of the surface leakage component are found under various conditions. It has been shown that the surface leakage current density decreases upon passivation with an Al2O3 film. It was found that at room temperature in the fabricated nBn structures with reverse biases, the surface leakage component dominates, and with forward biases, the dark current is determined by the combined effect of the surface leakage component and the bulk current component. From the Arrhenius plots, the values of the activation energies of the surface leakage current component were found, which at small reverse biases are in the range from 0.05 to 0.10 eV. At small reverse biases, upon cooling the samples, the role of the bulk component of the dark current increases, which at 180 K is approximately 0.81 A/cm2. In the temperature range 200-300 K, the values of the dark current density exceed the values calculated according to the empirical Rule07 model by a factor of 10-100, which indicates the possibility of creating long-wave infrared barrier detectors with a decrease in the values of the surface leakage component.

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Wani, Waseem Ahmad, Nilofar Naaz, B. Harihara Venkataraman, Souvik Kundu, and Kannan Ramaswamy. "Significantly reduced leakage current density in Mn-doped BiFeO₃ thin films deposited using spin coating technique." Journal of Physics: Conference Series 2070, no. 1 (November 1, 2021): 012088. http://dx.doi.org/10.1088/1742-6596/2070/1/012088.

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Abstract BiFeO3 (BFO) and Mn-doped BFO thin films are prepared on indium tin oxide/glass substrates using wet chemical deposition technique. The role of Mn defects (3% to 10%) on the leakage current density and other physical properties of BFO thin film devices is investigated. The X-ray diffraction patterns confirm the single-phase formation of rhombohedrally distorted BFO thin films. The scanning electron microscopy images approve uniform and crack-free film depositions, which is of great importance to the practical device applications of such materials. The oxidation states are determined by X-ray photoelectron spectroscopy (XPS). These XPS results reveal the presence of multiple valence states of Fe ions (Fe2+, Fe3+) and Mn (Mn3+, Mn4+) ions, which play a decisive role in determining the leakage current density. However, the Mn-doping at the Fe site in BFO reduces oxygen vacancies and Fe2+ states, hence suppressing the leakage current density. The leakage current density is reduced by three orders of magnitude (10−4 – 10−7) A/cm2, upon Mn-doping as clearly demonstrated by J-V characteristics. These results indicate that the primary contributors to the conduction in BFO based thin films are oxygen vacancies and the Fe2+ states in these devices.

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Tian, Dong Bin, Qi Feng Pan, Xiao Zhou He, and Xuan Hong Zhang. "Reduce the Leakage Current of High Voltage Polymer Ta Electrolyte Capacitors." Materials Science Forum 852 (April 2016): 686–90. http://dx.doi.org/10.4028/www.scientific.net/msf.852.686.

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The leakage currents of high nominal voltage conductive polymer tantalum (Ta) electrolytic capacitors are the difficulties in the research and development processing. The optimized and improved forming technical of increasing current density with the voltage rising was used in the present paper, and silane coupling agent has been used to the dielectric surface of the electrode body before polymerization, and conductive slurry was used to forming the cathode electrolyte of capacitors. Low leakage currents and high breakdown voltage have been tested; otherwise, the endurance capabilities of reverse voltage have prodigious enhanced.

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21

Mahi, K., and H. Ait-Kaci. "Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics." Journal of Nano- and Electronic Physics 13, no. 5 (2021): 05019–1. http://dx.doi.org/10.21272/jnep.13(5).05019.

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Kudou, Chiaki, Hirokuni Asamizu, Kentaro Tamura, Johji Nishio, Keiko Masumoto, Kazutoshi Kojima, and Toshiyuki Ohno. "Influence of Epi-Layer Growth Pits on SiC Device Characteristics." Materials Science Forum 821-823 (June 2015): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.177.

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Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

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He, Mo, Qi Bin Liu, and Chang Qi Xia. "Study on Microstructure of ZnO Lighting Arrester with High Voltage Gradient." Advanced Materials Research 415-417 (December 2011): 1070–73. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1070.

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To obtain ZnO arrester with high voltage gradient and small size, through the optimizing foundamental formula of arrester and changing sintering temperature and holding time, the electrical properties and microstructure of varistors were studied. The density of varistors was determined by using the mass - volume method , voltage gradient and leakage current of ZnO arrester were measured with Ⅱ Surge Arrester Tester DC parameters, microstructure of varistor ceramics were studied by means XRD and SEM. The experimental results show that with increasement of the sintering temperature, the density of varistors increases, and the voltage gradient continues to decrease and leakage current almost keeps unchangable. As the holding time increases, while as the voltage gradient continues to decrease, and leakage current almost unchanges.

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Kim, Nam-Kyeong, Soon-Gil Yoon, Won-Jae Lee, and Ho-Gi Kim. "Electrical and Structural Properties of SrTiO3 Thin Films Deposited by Plasma-enhanced Metalorganic Chemical Vapor Deposition." Journal of Materials Research 12, no. 4 (April 1997): 1160–64. http://dx.doi.org/10.1557/jmr.1997.0160.

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The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 °C influences the dielectric constant, dissipation factor, and leakage current density of STO films. The dielectric constant and dissipation factor of STO films deposited at 500 °C were 210 and 0.018 at 100 kHz, respectively. STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 °C was about 1.0 × 10-8 A/cm2 at an electric field of 70 kV/cm. The leakage current behaviors of STO films deposited at 500 and 550 °C were controlled by Schottky emission with applied electric field.

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Lee, Jae-Hoon, Jung-Hee Lee, and Ki-Sik Im. "Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes." Crystals 11, no. 2 (January 21, 2021): 87. http://dx.doi.org/10.3390/cryst11020087.

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AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and capacitance–voltage (C–V) measurements were conducted in order to find the leakage current mechanism and reduce the reverse leakage current. The fabricated AlGaN/GaN SBDs with high Al composition exhibited two orders’ higher leakage current compared to the device with low Al composition (20%) due to large bulk and surface leakage components. The leakage current measured at −60 V for the fabricated SBD with Al2O3 deposited at temperature of 550 °C was decreased to 1.5 μA, compared to the corresponding value of 3.2 mA for SBD with nonpassivation layer. The high quality ALD Al2O3 deposited at high temperature with low interface trap density reduces the donorlike surface states, which effectively decreases surface leakage current of the AlGaN/GaN SBD.

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Sohail, Muhammad, Salman Amin, Yasir Butt, and Muhammad Bin Zubaid Ramay. "Aging Performance of Low-Density Polyethylene/Silicone Rubber Blends Insulators Under Contaminated Conditions." Pakistan Journal of Engineering and Technology 5, no. 1 (March 10, 2022): 29–34. http://dx.doi.org/10.51846/vol5iss1pp29-34.

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Insulation materials are a vital part of the electrical system in all kinds of high voltage (HV) Transmission lines. Environmental stresses affect the performance of all types of insulation materials over time. Dielectric breakdown strength (DBS), Hydrophobicity, Leakage current, internal partial discharge and volume resistivity are all three degraded parameters in the service environment. The materials stand best in outdoor insulation, with the lowest partial discharge, highest breakdown strength, high hydrophobic, Lowest Leakage current, and highest volume resistivity. Enhancement of these parameters is a potential avenue for many researchers over the period. In this study, low-density polyethene (LDPE) under different nanofillers, including SiO2, TiO2, TiO2@SiO2, with different weight percentages, are used. This study investigates the behaviour of dielectric breakdown strength (DBS), Hydrophobicity and Leakage Current (LC) for 1000h test under contaminated conditions such as High voltage, heat, ultraviolet (UV) radiations, salt fog, humidity, and acid rain.

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Ramos, D., M. Delmas, R. Ivanov, D. Evans, L. Žurauskaitė, S. Almqvist, S. Becanovic, L. Höglund, E. Costard, and P. E. Hellström. "Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors." Journal of Applied Physics 132, no. 20 (November 28, 2022): 204501. http://dx.doi.org/10.1063/5.0106878.

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The surface leakage in InAs/GaSb type-II superlattice (T2SL) is studied experimentally and theoretically for photodiodes with small sizes down to 10 × 10 μm2. The dependence of dark current density on mesa size is studied at 110 and 200 K, and surface leakage is shown to impact both generation–recombination (GR) and diffusion dark current mechanisms. A quasi-3-dimensional model to simulate the fabrication process using surface traps on the pixel's sidewall is presented and is used to accurately represent the dark current of large and small pixels with surface leakage in the different temperature regimes. The simulations confirmed that the surface leakage current has a GR and diffusion component at low and high temperature, respectively. Finally, the surface leakage current has been correlated with the change in minority carrier concentration at the surface due to the presence of donor traps.

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Pengchan, W., T. Phetchakul, and Amporn Poyai. "Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method." Advanced Materials Research 55-57 (August 2008): 765–68. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.765.

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The total leakage current in silicon p-n junction diodes compatible with 0.8 µm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density.

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Kang, H. D. "Trap-density dependent leakage current behavior of lead zirconate titanite thin film." Thin Solid Films 516, no. 8 (February 2008): 2014–16. http://dx.doi.org/10.1016/j.tsf.2007.06.167.

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Chandel, Shilpi, Preeti Thakur, and Atul Thakur. "Low leakage current density and improved dielectric behavior of BiFexO3 nano-ceramics." Journal of Alloys and Compounds 845 (December 2020): 156287. http://dx.doi.org/10.1016/j.jallcom.2020.156287.

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Mousavi, Navid, Tohid Rahimi, and Homayoun Meshgin Kelk. "Reduction EMI of BLDC Motor Drive Based on Software Analysis." Advances in Materials Science and Engineering 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1497360.

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In the BLDC motor-drive system, the leakage current from a motor to a ground network and existence of high-frequency components of the DC link current are the most important factors that cause conducting interference. The leakage currents of the motors, flow through common ground, will interfere with other equipment because of the high density of electrical and electronic systems in the spacecraft and aircrafts. Moreover, generally there are common DC buses in the mentioned systems, which aggravate the problem. Function of the electric motor causes appearance of the high-frequency components in the DC link current, which can interfere with other subsystems. In this paper, the analysis of electromagnetic noise and presentation of the proposed method based on the frequency spectrum of the DC link current and the leakage current from the motor to the ground network are done. The proposed method presents a new process based on the filtering method to overcome EMI. To cover the requirement analysis, the Maxwell software is used.

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Tan, Suo Kui, Xiao Ping Song, Li Qiao, Hong Yan Guo, Song Ji, and Hong Zhao. "The Effect of Heat Treatment Temperature on Property and Structure of Ni Group Core-Shell Particles ER." Advanced Materials Research 213 (February 2011): 437–40. http://dx.doi.org/10.4028/www.scientific.net/amr.213.437.

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By means of mechanical properties test and microstructure graph observation，the relationship of heat treatment temperature of core-shell Ni/TiO2 group particles with mechanical properties under different electric field has been researched .It is found that the FT-IR，XRD morphology of heat treatment at350°C is different from the one at100°C，the shear stress of same composition ER decreased with heat treatment temperature increasing. But the leakage current density of ER shows contrary result. That is because the leakage current density of ER decreased with the increasing heat treatment temperature.

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Li, Li, and Qi Bin Liu. "Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors." Advanced Materials Research 820 (September 2013): 208–11. http://dx.doi.org/10.4028/www.scientific.net/amr.820.208.

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To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum voltage-gradient and leakage current are 371V/mm and 3μA, respectively.

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Salem, Ali Ahmed, Kwan Yiew Lau, Mohd Taufiq Ishak, Zulkurnain Abdul-Malek, Samir A. Al-Gailani, Salem Mgammal Al-Ameri, Ammar Mohammed, Abdulaziz Ali Saleh Alashbi, and Sherif S. M. Ghoneim. "Monitoring Porcelain Insulator Condition Based on Leakage Current Characteristics." Materials 15, no. 18 (September 14, 2022): 6370. http://dx.doi.org/10.3390/ma15186370.

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Insulator monitoring using leakage current characteristics is essential for predicting an insulator’s health. To evaluate the risk of flashover on the porcelain insulator using leakage current, experimental investigation of leakage current indices was carried out. In the first stage of the experiment, the effect of contamination, insoluble deposit density, wetting rate, and uneven distribution pollution were determined on the porcelain insulator under test. Then, based on the laboratory test results, leakage current information in time and frequency characteristics was extracted and employed as assessment indicators for the insulator’s health. Six indicators, namely, peak current indicator, phase shift indicator, slope indicator, crest factor indicator, total harmonic distortion indicator, and odd harmonics indicator, are introduced in this work. The obtained results indicated that the proposed indicators had a significant role in evaluating the insulator’s health. To evaluate the insulator’s health levels based on the extracted indicator values, this work presents the naïve Bayes technique for the classification and prediction of the insulator’s health. Finally, the confusion matrix for the experimental and prediction results for each indicator was established to determine the appropriateness of each indicator in determining the insulator’s health status.

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Schoeck, Johannes, Jonas Buettner, Mathias Rommel, Tobias Erlbacher, and Anton J. Bauer. "4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density." Materials Science Forum 897 (May 2017): 427–30. http://dx.doi.org/10.4028/www.scientific.net/msf.897.427.

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High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have been fabricated. They achieved a forward current of 5 A at a forward voltage drop of 1.8 V and 20 A at 4.2 V. A low reverse leakage current of 0.3 μA at 1.2 kV and 37 μA at 3.3 kV was measured. The chip size was 7.3 mm x 7.3 mm, the active area 0.25 cm2 and the diode was able to handle a repetitive pulse current density of over 300 A/cm2 without degradation. Floating field rings in combination with a field-stop ring were used as edge termination to reach 73 % of the theoretical breakdown voltage. The epitaxial layer was 32 μm thick, with a nitrogen doping concentration of 1 x 1015 cm-3. The JBS diodes have been manufactured in a 100 mm SiC prototyping line, using well established processing technology, to achieve cost-efficient devices.

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PEREZ, J. P., P. SIGNORET, M. MYARA, I. ASAAD, and B. ORSAL. "SURFACE LEAKAGE CURRENT RELATED $\frac{1}{f}$ NOISE IN NONILLUMINATED FOCAL PLANE ARRAY Hg1-xCdxTe DIODE." Fluctuation and Noise Letters 03, no. 04 (December 2003): L379—L388. http://dx.doi.org/10.1142/s0219477503001488.

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Experimental results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg1-xCdxTe ion implanted n+-on-p junction photodiodes with x = 0,3. By measuring the temperature dependence of the dc characteristics in the temperature range [77 K, 175 K], it was found that the dark current can be represented with two components at low reverse-bias: diffusion and surface leakage current. Furthermore, reporting on electrical noise spectral density as a function of temperature and dark current, we assume that below 120 K, [Formula: see text] noise current is surface leakage current related.

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Titthikusumarn, Wiwa, Wittaya Jakpetch, and Wisut Titiroongruang. "Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation." Advanced Materials Research 811 (September 2013): 200–204. http://dx.doi.org/10.4028/www.scientific.net/amr.811.200.

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Mesa diodes were irradiation by electron beam at various doses of 25, 50 and 75 kGy to find optimum dose for controlling minority carrier lifetime. The experiment result shows that electron beam can reduce minority carrier lifetime from 24.3 ns to 14.8, 9.5 ns and 7.9 at dose of 25, 50 and 75 kGy, respectively. However, the result of electron beam is not only reduce the lifetime but also effected to other electrical properties such as increasing in saturation current density about 2-3 times, increasing in reverse leakage current density about 3 times. Dominant cause of reverse leakage is increasing in generation current via center traps which formed by the irradiation.

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Shi, Yan, Xing Liang Jiang, Qi Fa Wan, Xiong Wu, and Tao Xu. "Measurement and Analysis of the Leakage Current on the Surface of Polluted Suspension Ceramic Insulator." Applied Mechanics and Materials 48-49 (February 2011): 668–74. http://dx.doi.org/10.4028/www.scientific.net/amm.48-49.668.

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The artificial pollution tests are implemented on an IEC standard suspension insulator, and the leakage current waveforms and frequency characteristics were investigated under different equivalent salt deposit density ESDD and relative humidity. It was found that the peak values of the leakage current, the total harmonic distortion (THD) and the odd order harmonic components, e.g. 150 and 650Hz, were significantly correlated with the contamination condition of the insulator surfaces. Besides, a new characteristic parameter IMR，defined as the product of the peak values of leakage current by the ratio of the 3rd order harmonic components to the 13th order harmonic components, is introduced to evaluate the contamination condition on the insulator surface.

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Wang, Yang, De Xiang Fu, Wen Zhi Li, Jian Hua Wang, Wen Hao Zhang, Yong Tao Li, Sheng Li Liu, Liang Xie, and Hong Guang Zhang. "Effect of Annealing on Room Temperature Multiferroics of BiFe_1-xCo_xO₃." Materials Science Forum 859 (May 2016): 30–35. http://dx.doi.org/10.4028/www.scientific.net/msf.859.30.

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We studied the effect of annealing and Co ion doping on the structure, leakage current, ferroelectric polarization and magnetism of BiFeO3 samples. X-ray diffraction patterns demonstrate that an appropriate Co doping concentration is favor of suppressing the secondary phase but annealing treatment is apt to the growth of both the main and the secondary phases. The current density as a function of an electric field indicates that Co doping increases the leakage current density as samples before annealing but suppresses it after annealing. Annealing treatment improves the leakage for Co-doped sample and reduces it for the undoped sample. Ferroelectric hysteresis loops reflect that Co ions doping is liable to increase the ferroelectric polarization, while the sample is annealed it will do opposite effect. However the annealing treatment do improve the ferroelectricity for pure BiFeO3 sample. The magnetic hysteresis at room temperature shows the obvious enhancement of ferromagnetic properties with the sample after annealing.

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Umezawa, Hitoshi, Kazuhiro Ikeda, Ramanujam Kumaresan, Natsuo Tatsumi, and Shinichi Shikata. "Device Characteristics Dependence on Diamond SDBs Area." Materials Science Forum 615-617 (March 2009): 1003–6. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.1003.

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Device size scaling of pseudo-vertical diamond Schottky barrier diodes (SBDs) has been characterized for high-power device applications based on the control of doping concentration and thickness of the p- CVD diamond layer. Decreasing parasitic resistance on the p+ layer utilizing lithography and etching makes possible to get a constant specific on-resistance of less than 20 mOhm-cm2 with increasing device size up to 200 µm. However, the leakage current under low reverse bias conditions is increased markedly. Due to the increase in the leakage current, the reverse operation limit is decreased from 2.4 to 1.3 MV/cm when the device size is increased from 30 to 150 µm. If defects induce an increase in leakage current under the reverse conditions, the density of the defects can be estimated to be 104–105/cm2. This value is 5–10 times larger than the density of dislocations in single crystal diamond substrate.

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Atalla, M. R. M., S. Assali, S. Koelling, A. Attiaoui, and O. Moutanabbir. "Dark current in monolithic extended-SWIR GeSn PIN photodetectors." Applied Physics Letters 122, no. 3 (January 16, 2023): 031103. http://dx.doi.org/10.1063/5.0124720.

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Monolithic integration of extended short-wave infrared photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the subject of extensive investigations because of their bandgap tunability and silicon compatibility. However, due to growth defects, these PDs suffer a relatively high dark current density as compared to commercial III–V PDs. Herein, we elucidate the mechanisms governing the dark current in [Formula: see text]m GeSn PDs at a Sn content of 10 at. %. It was found that in the temperature range of 293–363 K and at low bias, the diffusion and Shockley–Read–Hall (SRH) leakage mechanisms dominate the dark current in small diameter ([Formula: see text]m) devices, while combined SRH and trap assisted tunneling (TAT) leakage mechanisms are prominent in larger diameter ([Formula: see text]m) devices. However, at high reverse bias, the TAT leakage mechanism becomes dominant regardless of the operating temperature and device size. The effective non-radiative carrier lifetime in these devices was found to reach [Formula: see text]–150 ps at low bias. Owing to TAT leakage current, however, this lifetime reduces progressively as the bias increases.

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Huang, Yujie, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang, and Ping Chen. "A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition." Nanomaterials 13, no. 3 (January 28, 2023): 525. http://dx.doi.org/10.3390/nano13030525.

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The dark leakage current of AlxGa1-xN Schottky barrier detectors with different Al contents is investigated. It was found that the dark leakage of AlxGa1-xN detectors increased with increasing Al content. The XRD and SIMS results showed that there was no significant difference of the dislocation density and carbon impurity concentration in five AlxGa1-xN samples with different Al content. This was likely not the main reason for the difference in dark leakage current of AlxGa1-xN detectors. However, the results of positron annihilation showed that the vacancy defect concentration increased with increasing Al content. This was consistent with the result that the dark leakage current increased with increasing Al content. With the increase of vacancy concentration, the vacancy defect energy levels also increased, and the probability of electron tunneling through defect levels increased. In contrast, the Schottky barrier height decreased, which eventually led to the increase of dark leakage current. This discovery should be beneficial to an accurate control of the performance of AlxGa1-xN detectors.

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Wang, Yekan, Michael Evan Liao, Kenny Huynh, William Olsen, James C. Gallagher, Travis J. Anderson, Xianrong Huang, Michael Wojcik, and Mark S. Goorsky. "Impact of Substrate Defects on Vertical GaN Device Leakage Behavior." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1309. http://dx.doi.org/10.1149/ma2022-01311309mtgabs.

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In this work, the effects of the substrate defects on the reverse leakage behavior of vertical GaN Schottky and p-i-n diodes are investigated. A direct connection between the reverse leakage behavior of GaN based vertical devices and the defect characteristics of the substrate was achieved. The difference in the leakage current can be as high as 6 orders of magnitude for vertical GaN p-i-n diodes at -200V, using HVPE substrate with inhomogeneous defect distributions (with dot-cores). For comparison, using HVPE substrate with uniform defect distribution (no cores), the p-i-n diodes show much more uniform leakage behavior at -200V, varying within only an order of magnitude. The wafers with inhomogeneous defect distribution possess periodically patterned core-centers with higher defect density (up to 108 cm-2) than regions in between cores, which have very low defect concentrations (as low as 104 cm-2). The full width at 0.01 maximum of the triple axis rocking curves (GaN (0004)) shows a large variation ranging from 60 to 930 arcsec. In comparison, wafers without the periodic cores have a uniform defect density (~106 cm-2) and show a small variation in the rocking curve FW0.01M, ranging only from 70 to 280 arcsec. For Schottky diodes fabricated on substrate with cores, positioning the devices away from the core-centers results in a reduction of the reverse bias leakage by 2-4 orders of magnitude at -10 V. Similar trend are also observed in the p-i-n diodes, with device further away from the core-centers showing lower leakage. The devices in the low defect concentration region (> 200 um away from core centers) on the wafer with cores outperform the devices from the wafer without cores, showing up to 2 orders of magnitude lower leakage current at -200 V. The results from this study show that the substrate defect density and distribution play an important role on the device leakage current and avoiding highly defective regions on the substrate will improve the performance of vertical GaN devices.

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Wu, Qiuju, Qing Yu, Gang He, Wenhao Wang, Jinyu Lu, Bo Yao, Shiyan Liu, and Zebo Fang. "Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment." Nanomaterials 13, no. 11 (May 26, 2023): 1740. http://dx.doi.org/10.3390/nano13111740.

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In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has been investigated. X-ray photoelectron spectroscopy (XPS) analyses have showed that the ALD-derived Al2O3 passivation layer remarkably prevents the formation of the low-k hydroxides generated by moisture absorption of the gate oxide and greatly optimizes the gate dielectric properties. Electrical performance measurements of metal oxide semiconductor (MOS) capacitors with different gate stack order have revealed that the lowest leakage current density of 4.57 × 10−9 A/cm2 and the smallest interfacial density of states (Dit) of 2.38 × 1012 cm−2 eV−1 have been achieved in the Al2O3/Er2O3/Si MOS capacitor, which can be attributed to the optimized interface chemistry. Further electrical measurements of annealed Al2O3/Er2O3/Si gate stacks at 450 °C have demonstrated superior dielectric properties with a leakage current density of 1.38 × 10−9 A/cm2. At the same, the leakage current conduction mechanism of MOS devices under various stack structures is systematically investigated.

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Jayadevan, Kampurath P., Chi-Yi Liu, and Tseung-Yuen Tseng. "Surface Chemical and Leakage Current Density Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Thin Films." Journal of the American Ceramic Society 88, no. 9 (September 2005): 2456–60. http://dx.doi.org/10.1111/j.1551-2916.2005.00441.x.

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Wu, Min-Ci, Yi-Hsin Ting, Jui-Yuan Chen, and Wen-Wei Wu. "A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current." ECS Meeting Abstracts MA2020-01, no. 22 (May 1, 2020): 1298. http://dx.doi.org/10.1149/ma2020-01221298mtgabs.

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47

Simões, A. Z., L. S. Cavalcante, F. Moura, E. Longo, and J. A. Varela. "Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films." Journal of Alloys and Compounds 509, no. 17 (April 2011): 5326–35. http://dx.doi.org/10.1016/j.jallcom.2011.02.030.

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El-Hag, Ayman H., S. H. Jayaram, and E. A. Cherney. "Calculation of leakage current density of silicone rubber insulators under accelerated aging conditions." Journal of Electrostatics 67, no. 1 (February 2009): 48–53. http://dx.doi.org/10.1016/j.elstat.2008.11.006.

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Akashe, Shyam, and Sanjay Sharma. "High density and low leakage current based SRAM cell using 45 nm technology." International Journal of Electronics 100, no. 4 (April 2013): 536–52. http://dx.doi.org/10.1080/00207217.2012.713023.

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Salem, Ali Ahmed, Kwan Yiew Lau, Zulkurnain Abdul-Malek, Nabil Mohammed, Abdullah M. Al-Shaalan, Abdullrahman A. Al-Shamma’a, and Hassan M. H. Farh. "Polymeric Insulator Conditions Estimation by Using Leakage Current Characteristics Based on Simulation and Experimental Investigation." Polymers 14, no. 4 (February 14, 2022): 737. http://dx.doi.org/10.3390/polym14040737.

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The current work contributes an estimate of the time-frequency characteristics of a leakage current in assessing the health condition of a polluted polymeric insulator. A 33 kV polymer insulator string was subjected to a series of laboratory tests under a range of environmental conditions, including pollution, wetting rate (WR), non-soluble deposit density (NSDD), and non-uniform distribution pollution (FT/B). The temporal and frequency features of the leakage current were then extracted and used as assessment indicators for insulator conditions based on laboratory test findings. Two indices were generated from the leakage current waveform in the time domain: the curve slope index (F1), which is determined by measuring the inclination of the curve between two successive time peaks of the leakage current, and the crest factor indicator (F2). The frequency domain of the leakage current signal was used to calculate the other two indices. These are the odd harmonic indicators derived from the odd frequency harmonics of the leakage current up to the 9th component (F3) and the 5th to 3rd harmonics ratio (F4). The findings showed that the suggested indicators were capable of evaluating insulator conditions. Finally, the confusion matrix for the experimental and prediction results obtained with the proposed indices was used to assess which indicator performed the best. Therefore, the analysis suggests an alternative and effective method for estimating the health condition of a polluted insulator through leakage current characteristics obtained in the time and frequency domains.

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Journal articles on the topic 'Leakage Current Density'

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