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Journal articles on the topic 'Laser diodes'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 March 2023

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1

Li, Zai Jin, Yi Qu, Te Li, Peng Lu, Bao Xue Bo, Guo Jun Liu, and Xiao Hui Ma. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.

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The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.

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2

KAWAGUCHI, H. "POLARIZATION BISTABLE LASER DIODES." Journal of Nonlinear Optical Physics & Materials 02, no. 03 (July 1993): 367–89. http://dx.doi.org/10.1142/s021819919300022x.

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Static and dynamic characteristics of a pitchfork bifurcation polarization bistability in a laser diode are analyzed using rate-equations taking account of nonlinear gain. It is shown that the bistable laser diode has the advantage of high-speed switching when trigger optical pulses are coupled coherently to the bistable laser output. Experimental results on this new polarization bistability in a laser diode with a two-armed polarization-selective external cavity are also described with a brief review of recent progress in research on polarization bistable laser diodes.

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3

Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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4

Parshin, V. A., V. V. Bliznyuk, and A. V. Dolgov. "Polarization stability of the single-mode laser diodes radiation applied in radiation scattering study complexes." Journal of Physics: Conference Series 2127, no. 1 (November 1, 2021): 012040. http://dx.doi.org/10.1088/1742-6596/2127/1/012040.

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Abstract Key features of semiconductor lasers and its serially manufacturing technology modernization have greatly expanded of its using at applied studies at last 20 years. But there is set of factors restricting such lasers application in a number of optical-electronic measuring complexes. Particularly in particle image velocimetry (PIV) and laser Doppler velocimetry (LDV) complexes commonly the gas and solid-state lasers is used due to more stability of spectral, energy and polarization characteristics of radiation then semiconductor lasers have. However gradual introduction of the serially manufacturing laser diodes into such systems picking up the pace that certainly characterizes the progress of reaching the required stability of its output laser radiation parameters. In laser measurement systems where medium investigation carried out by analyzing of scattering radiation in it the probe radiation polarization is often important. So the using in such systems the laser diodes as sources of radiation need to be followed by stability monitoring of its polarization characteristics which may be violated both by the outer factors and by natural degradation of inner laser diode structure. This work is devoted to the issues of monitoring the radiation polarization characteristics of the serially manufacturing single-mode laser diodes.

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5

RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.

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6

Sharma, Rishi Kant, Shammi Wadhwa, N. K. Verma, M. N. Reddy, and H. Rana. "Evaluation of 976 nm Multimode Single Emitter Laser Diodes for Efficient Pumping of 100 W+ Yb-doped Fiber Laser." Defence Science Journal 67, no. 1 (December 23, 2016): 88. http://dx.doi.org/10.14429/dsj.67.9962.

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<p>Experimental evaluation of spectral and power-current (P-I) characteristics of fiber coupled single emitter multimode laser diodes used for development of efficient pumping assembly is reported. Fiber coupled laser diodes emitting around 976 nm are best suited for pumping Yb-doped fiber lasers because of excellent coupling efficiency and reduced thermal load. We have experimentally investigated emission spectrum of fiber coupled multimode laser diodes at different temperatures and drive currents. It is found that peak emission wavelength shifts towards the longer wavelength with increase in temperature and drive current. P-I characteristics of fiber coupled laser diodes have been obtained and presented for drive current from 0.4 A to 11.5 A. Based on experiment, we have constructed spectrally matched laser diode assembly for efficient pumping of 100 W fiber laser. It requires very precise control of temperature and drive current to maintain the emission spectrum. Total 162 W power is pumped in to the Yb-doped fiber laser cavity through multi-mode pump combiners and we have obtained 110 W fiber laser output power @1070 nm. The achieved optical-to-optical efficiency is 68 per cent.</p>

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7

Alander, Tapani M., Pekka A. Heino, and Eero O. Ristolainen. "Analysis of Substrates for Single Emitter Laser Diodes." Journal of Electronic Packaging 125, no. 3 (September 1, 2003): 313–18. http://dx.doi.org/10.1115/1.1527657.

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Electrically conductive substrates (i.e., metals) are often used in the mounting of semiconductor laser diodes. While metals offer a good electrical and thermal performance, they restrict the system integration due to lack of signal routing capability. Since the implementations utilizing laser diodes have become more common, the integration level has also become an important factor in these products. Mounting of lasers on insulative substrates is the key to large-scale integration. Organic boards form the de facto standard of insulative substrates; however, their use with lasers is impossible due to low thermal conductivity. Ceramics, however, offer nearly the same thermal performance as metals but as electrically insulative materials also provide the foundation for high integration levels. In this study the effects of three different ceramic substrates on the stresses within diode lasers was evaluated. Finite element method was used to calculate the mounting induced straining and the thermal performance of the substrate. The same procedure was employed to examine the optimum metallization thickness for the ceramic substrates. The results present how greatly the substrate material can affect the very delicate laser diode. The ceramic substrates, though having nearly the same properties, exhibited clearly distinctive behavior and a great difference in thermal and mechanical performance.

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8

Stelmakh, N. "Sub-Picosecond Mode-Locked Laser Diodes." International Journal of High Speed Electronics and Systems 08, no. 03 (September 1997): 525–46. http://dx.doi.org/10.1142/s0129156497000196.

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Recent experiments have shown that laser diodes are capable generating nulses as short as 160 fs, thus approaching the performance of more conventional femtosecond lasers such as Tilsapphire lasers or dye lasers. Regular progress is also accomplished in terms of power and energy efficiency or spectral and spatial brightness with the development of novel semiconductor laser structures. In this paper, we review decisive improvements which have placed laser diodes in category of sub-picosecond lasers. A number of experimental results are used to illustrate the specific characteristics of short-pulse laser diodes as compared to other laser systems. The effects of dispersion and phase modulation are discussed on a basis of theoretical model of chirp mode locking.

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9

Bertling, Karl, Xiaoqiong Qi, Thomas Taimre, Yah Leng Lim, and Aleksandar D. Rakić. "Feedback Regimes of LFI Sensors: Experimental Investigations." Sensors 22, no. 22 (November 21, 2022): 9001. http://dx.doi.org/10.3390/s22229001.

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In this article, we revisit the concept of optical feedback regimes in diode lasers and explore each regime experimentally from a somewhat unconventional point of view by relating the feedback regimes to the laser bias current and its optical feedback level. The results enable setting the operating conditions of the diode laser in different applications requiring operation in different feedback regimes. We experimentally explored and theoretically supported this relationship from the standard Lang and Kobayashi rate equation model for a laser diode under optical feedback. All five regimes were explored for two major types of laser diodes: inplane lasers and vertical-cavity surface emitting lasers. For both lasers, we mapped the self-mixing strength vs. drive current and feedback level, observed the differences in the shape of the self-mixing fringes between the two laser architectures and a general simulation, and monitored other parameters of the lasers with changing optical feedback.

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10

Sherniyozov, А. А., F. A. Shermatova, Sh D. Payziyev, Sh A. Begimkulov, F. M. Kamoliddinov, A. G. Qahhorov, and A. G. Aliboyev. "Simulation of physical processes in light-emitting diode pumped lasers." «Узбекский физический журнал» 23, no. 3 (December 7, 2021): 38–42. http://dx.doi.org/10.52304/.v23i3.262.

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We have developed an end-to-end simulation model for the light-emitting diode-pumped solidstate laser using the Monte Carlo photon tracing technique. The model considers complete specifics and spectral characteristics of light-emitting diodes. This model is the first of its kind to enable comprehensive analysis of light-emitting diode-pumped laser systems to the best of our knowledge. The model revealed several critical implications, which can be considered in the practical realization of light-emitting diode-pumped lasers.

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11

Dostálová, T., J. Kratochvíl, H. Jelínková, A. Nocar, and L. Vavříčková. "Blue (0.44 µm) and red (1.7 µm) diode laser activated bleaching—dental shade changes determination." Laser Physics Letters 20, no. 3 (February 2, 2023): 035601. http://dx.doi.org/10.1088/1612-202x/acb3c9.

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Abstract Tooth whitening or bleaching is one of the most common dental procedures that optimize the white color of the teeth and minimize the simultaneous damage to the tooth structure. Light can speed up the whitening process with halogen lamps, light-emitting diodes, plasma arc lamps, and lasers. Our results show that combinations of a teeth whitening agent with laser light irradiation with a 0.44 µm blue laser diode or a 1.7 µm near-IR laser diode accelerate the whitening process not only during tooth irradiation but also within two weeks after the procedure.

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12

Vanzi, Massimo. "Optical Gain in Commercial Laser Diodes." Photonics 8, no. 12 (November 29, 2021): 542. http://dx.doi.org/10.3390/photonics8120542.

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Optical gain and optical losses are separately measured in commercial laser diodes by simple analysis of spectral and electrical characteristics, and with no special specimen preparation or handling. The aim is to bring device analysis, for characterization and reliability purposes, closer to the intimate physical processes that rule over laser diode operation. Investigation includes resonating and non-resonating optical cavities.

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13

Bliznyuk, Vladimir, Olga Koval, Vasiliy Parshin, Alexey Rzhanov, Alexander Tarasov, and Vladislav Grigoriev. "Spectral-spatial structure of the high-power laser diodes radiation during their operation." EPJ Web of Conferences 220 (2019): 02016. http://dx.doi.org/10.1051/epjconf/201922002016.

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The emission spectra of high-power laser diodes in the process of exploitation at different pump currents and the relationship of these spectra with the spatial structure of the field are considered. The field in laser diodes with a wide contact splits into several independent channels corresponding to the components of the radiation frequency spectrum. It is established that the number of channels and the corresponding number of spectral components of laser diode radiation increases during operation.

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14

Fang, Gang, and Ting-Wei Tang. "Simulation of Bistable Laser Diodes with lnhomogeneous Excitation." VLSI Design 8, no. 1-4 (January 1, 1998): 283–87. http://dx.doi.org/10.1155/1998/60536.

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A comprehensive time-dependent 1-D computer model is developed for the simulation of multi-section bistable laser diodes. Analysis of a Fabry-Perot (FP) cavity laser diode indicates that the height and shape of the optical input pulse as well as the wavelength play important roles in the set/reset operation of optical switching.

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15

FUJIMOTO, Tsuyoshi, Yuji YAMAGATA, Yumi YAMADA, Tsuyoshi SAITOH, Manabu KATAHIRA, and Kazuomi UCHIDA. "High Brightness Laser Diodes and Fiber Coupled Laser Diodes." Review of Laser Engineering 39, no. 9 (2011): 674–79. http://dx.doi.org/10.2184/lsj.39.674.

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16

Ivashko, A. M., V. E. Kisel, and N. V. Kuleshov. "POWER SCALING IN CONTINUOUS-WAVE YB:YAG MICROCHIP LASER FOR MEASURING APPLICATIONS." Devices and Methods of Measurements 8, no. 3 (September 27, 2017): 222–27. http://dx.doi.org/10.21122/2220-9506-2017-8-3-222-227.

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Characteristics optimization of lasers used in different measuring systems is of great interest up to now. Diode-pumped microchip lasers is one of the most perspective ways for development of solid-state light sources with minimal size and weight together with low energy power consumption. Increasing of output power with good beam quality is rather difficult task for such type of lasers due to thermal effects in the gain crystal under high pump power.The investigation results of continuous-wave longitudinally diode-pumped Yb:YAG microchip laser are presented. In the presented laser radiation from multiple pump laser diodes were focused into the separate zone in one gain crystal that provides simultaneous generation of multiple laser beams. The energy and spatial laser beam characteristics were investigated.Influence of neighboring pumped regions on energy and spatial laser beams parameters both for separate and for sum laser output was observed. The dependences of laser output power from distance between neighboring pumped regions and their number were determined. Decreasing of laser output power was demonstrated with corresponding distance shortening between pumped regions and increasing their quantity with simultaneous improvement of laser beam quality.Demonstrated mutual influence of neighboring pumped regions in the longitudinally diode pumped Yb:YAG microchip laser allow as to generate diffraction limited Gaussian beam with 2W of continuous-wave output power that 30 % higher than in case of one pumped zone.

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17

Tang, Yongjun, Meixin Feng, Jianxun Liu, Shizhao Fan, Xiujian Sun, Qian Sun, Shuming Zhang, et al. "Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings." Nanomaterials 11, no. 11 (November 16, 2021): 3092. http://dx.doi.org/10.3390/nano11113092.

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This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Pérot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.

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18

Fomin A.V., Usmanov S.R., Ignatev A.N., and Kadigrob E.V. "Fiber laser module with brightness exceeding 10 MW/(cm-=SUP=-2-=/SUP=-·sr)." Technical Physics 92, no. 4 (2022): 523. http://dx.doi.org/10.21883/tp.2022.04.53610.305-21.

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The work was dedicated to the laser modules for the spectral range of 975 nm based on single laser diodes with fiber output to be designed and manufactured. The installation of an optical system for the seven laser diodes radiation input into a silica-silica fiber with a core diameter of 105 μm and a numerical aperture of 0.15 has been carried out while investigating their power and spectral characteristics. The maximum output power of the laser module was 65 W in CW operation at a nominal current of 12 A and a thermal stabilization temperature of 25oC, the total efficiency of the laser module was 43%, and the brightness of the laser module amounted to 10.6 MW/(cm2·sr). Keywords: laser module, optical system, laser diodes, fiber lasers.

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19

Chen, Fu-Zen, Yu-Cheng Song, and Fu-Shun Ho. "An Efficiency Improvement Driver for Master Oscillator Power Amplifier Pulsed Laser Systems." Processes 10, no. 6 (June 16, 2022): 1197. http://dx.doi.org/10.3390/pr10061197.

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The master oscillator power amplifier (MOPA) pulsed laser, one of the popular topologies for high-power fiber laser systems, is widely applied in industrial machining laser systems. In MOPA, the low-power pulsed laser, stimulated from a seed laser diode, is amplified by the high- power optical energy from pump laser diodes via the gain fiber. Generally, the high-power pump laser diodes are driven by lossy linear current drivers. The switched mode current drivers boost the driver efficiency but suffer from pulse energy consistency due to the current switching ripple. In this paper, a laser driver system that varies the switching frequency of current source to synchronize with pulsed laser repetition rate is analyzed and implemented. Experimental results are demonstrated using a 20 W pulsed fiber laser system.

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20

Chang, Hsun-Ming, Philip Chan, Norleakvisoth Lim, Vincent Rienzi, Michael J. Gordon, Steven P. DenBaars, and Shuji Nakamura. "Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template." Crystals 12, no. 9 (August 27, 2022): 1208. http://dx.doi.org/10.3390/cryst12091208.

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Electrically driven c-plane InGaN-based blue edge emitting laser diodes on a strain-relaxed template (SRT) are successfully demonstrated. The relaxation degree of the InGaN buffer was 26.6%, and the root mean square (RMS) roughness of the surface morphology was 0.65 nm. The laser diodes (LDs) on the SRT laser at 459 nm had a threshold current density of 52 kA/cm2 under the room temperature pulsed operation. The internal loss of the LDs on the SRT was 30–35 cm−1. Regardless of the high threshold current density, this is the first demonstrated laser diode using the strain-relaxed method on c-plane GaN.

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21

Lutgen, Stephan, and Michael Schmitt. "Blue Laser diodes." Optik & Photonik 4, no. 2 (June 2009): 37–39. http://dx.doi.org/10.1002/opph.201190024.

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22

Piprek, Joachim. "Blue Laser Diodes." Optik & Photonik 2, no. 2 (June 2007): 52–55. http://dx.doi.org/10.1002/opph.201190253.

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23

Cheng, Liwen, Zhenwei Li, Jiayi Zhang, Xingyu Lin, Da Yang, Haitao Chen, Shudong Wu, and Shun Yao. "Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes." Nanomaterials 11, no. 8 (August 15, 2021): 2070. http://dx.doi.org/10.3390/nano11082070.

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An InGaN laser diode with InGaN–GaN–InGaN delta barriers was designed and investigated numerically. The laser power–current–voltage performance curves, carrier concentrations, current distributions, energy band structures, and non-radiative and stimulated recombination rates in the quantum wells were characterized. The simulations indicate that an InGaN laser diode with InGaN–GaN–InGaN delta barriers has a lower turn-on current, a higher laser power, and a higher slope efficiency than those with InGaN or conventional GaN barriers. These improvements originate from modified energy bands of the laser diodes with InGaN–GaN–InGaN delta barriers, which can suppress electron leakage out of, and enhance hole injection into, the active region.

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24

Bliznyuk, Vladimir, Alexey Dolgov, Vasiliy Parshin, Alexey Rzhanov, Olga Semenova, and Alexander Tarasov. "Optoelectronic complex for express laser diodes lifetime prediction." EPJ Web of Conferences 220 (2019): 02002. http://dx.doi.org/10.1051/epjconf/201922002002.

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This paper presents the optoelectronic complex, which provides both preparations for carrying out an express lifetime prediction of edge emitted strip single-mode laser diodes. It is shown that for this purpose the complex should consist of four operational units: an input control unit; a spectral radiation characteristics measurement unit; a laser lifetime forecasting unit and automatic processing hardware unit. The use of this complex makes it possible to predict the lifetime of a laser diode according to their spectral characteristics at the initial stage of its operation.

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25

Ali, Mohanad H., Mahmood H. Enad, Jasim Mohmed Jasim, Rawaa A. Abdul-Nab, and Nadia Alani. "Study of impact of art performance level of blue laser technology applications and its control." Indonesian Journal of Electrical Engineering and Computer Science 17, no. 3 (March 1, 2020): 1383. http://dx.doi.org/10.11591/ijeecs.v17.i3.pp1383-1389.

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<p><span>In this work; we present an enhancement in blue laser diodes with new factors and applications for modern technology such as underwater telecommunications, bio-sensor and bio-medical systems etc. Years of advance meanwhile have much enhanced laser performance, and extremely improved their diversity, making lasers significant parts in scientific research, telecommunications, engineering, bio-medical imaging, materials working, and a swarm of other applications. This article viewing how laser technology has progressed to chance application requirements. The enhanced blue laser building diagrams to get a peak efficiency% at room temperature with modification. Moreover, we have as well estimated electro-optical performance packing of blue laser diodes been significantly various associated to GaAs laser method and novel developments and performances are required to enhance the optical power from anther laser diodes. Researchers need enhanced approaches to accurately make new the blue laser applications to use control of modern experimental measurements and optical communication.</span></p>

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26

Hui, Rongqing, Sergio Benedetto, and Ivo Montrosset. "Optical bistability in diode-laser amplifiers and injection-locked laser diodes." Optics Letters 18, no. 4 (February 15, 1993): 287. http://dx.doi.org/10.1364/ol.18.000287.

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27

Azarova, O. N., N. L. Istomina, and L. V. Kariakina. "Laser World of Photonics 2019: semiconductor and dye lasers Laser World of Photonics 2019: полупроводниковые лазеры и лазеры на красителях." PHOTONICS Russia 13, no. 8 (December 16, 2019): 710–13. http://dx.doi.org/10.22184/1993-7296.fros.2019.13.8.710.713.

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The article presents an overview of laser products presented at the Laser World of Photonics-2019 exhibition. EAGLEYARD Photonics creates laser diodes with wavelengths from 630 to 1120 nm. The active medium for laser diodes are semiconductor materials. The production provides high quality crystals, and limitations on the accuracy and lifetime of laser diodes are due only to the characteristics of gallium arsenide used as an active medium. Radiant Dyes Laser produces dye lasers and laser dyes themselves. To increase the output parameters in the laser design, optomechanics of completely non-magnetic materials is used. В статье преставлен обзор лазерных продуктов, представленных на выставке Laser World of Photonics-2019. Компания EAGLEYARD Photonics создает лазерные диоды с длиной волны от 630 до 1120 нм. Активной средой для лазерных диодов являются полупроводниковые материалы. Производство обеспечивает высокое качество кристаллов, и ограничения по точности и времени жизни лазерных диодов обусловлены только характеристиками арсенида галлия, используемого в качестве активной среды. Компания Radiant Dyes Laser производит лазеры на красителях и сами красители для лазеров. Для повышения выходных параметров в конструкции лазера используют оптомеханику из абсолютно немагнитных материалов.

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Dong, Shao Guang, and Guo Jie Chen. "Influence of Stark Effect and Quantum Wells Thickness on Optical Properties of InGaN Laser Diodes." Applied Mechanics and Materials 440 (October 2013): 25–30. http://dx.doi.org/10.4028/www.scientific.net/amm.440.25.

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The influences of Stark Effect and quantum wells thickness on the optical properties of InGaN laser diodes have been studied. The results indicated that the Stark Effect greatly affects the optical properties of InGaN laser diodes, when the quantum wells thickness increases, the Stark Effect leads to deteriorating of the optical proprieties of the InGaN laser diodes. The polarization in the active layer of the InGaN laser diodes has been estimated by the blue shift of the spectral lines. The results shown that the better properties of InGaN laser diodes can be obtained with smaller quantum wells thickness, where more carriers can be restricted in the quantum wells, which leads to a larger recombination rate, which in turn increases the output power of the laser diodes, decreases the threshold current of the laser diodes.

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29

TAKATSUJI, Masamoto, and Yasuhiro MORI. "Laser Plant Factory Utilizing Laser Diodes." Review of Laser Engineering 31, no. 5 (2003): 326–29. http://dx.doi.org/10.2184/lsj.31.326.

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30

Hao, E. J., T. Li, Z. D. Wang, and Y. Zhang. "Nd:GdVO4ring laser pumped by laser diodes." Laser Physics Letters 10, no. 2 (January 11, 2013): 025803. http://dx.doi.org/10.1088/1612-2011/10/2/025803.

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31

BASOV, N. G., Yu M. POPOV, V. V. BEZOTOSNY, and Kh Kh KUMYKOV. "2D high power laser diode arrays for solid-state laser driver inertial fusion energy project." Laser and Particle Beams 17, no. 3 (July 1999): 427–35. http://dx.doi.org/10.1017/s0263034699173105.

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2D arrays of laser diodes were developed and investigated under QCW operating conditions. Output power and energy density up to 1 kW/cm2 and 0.45 J/cm2 (at pulse duration 0.5 ms) were measured at the wavelength 810 nm. The spectral composition of radiation, shape of the output pulses, and far-field and near-field radiation zones were examined under various pumping parameters. The kinetics of the temperature profiles in monolithic QCW AlGaAs/GaAs linear bars and 2D arrays, emitting at the wavelength 810 nm was modeled numerically. Quasi-CW and CW operation under various pump parameters were considered as a function of a heat sink design. A calculation model was used to interpret the experimental dependences of the output parameters of the arrays on the pump conditions for application in the solid-state laser driver project. The limit of total power conversion efficiency of diode lasers was analyzed in respect of the threshold current density, series resistance and external differential quantum efficiency. The estimated maximum value of 75% was obtained for the present technological level of the diode lasers production. The corresponding limit of the output optical power density of 2D laser array was defined around 10 kW/cm2.

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KOVALCHUK, B. M., E. N. ABDULLIN, D. M. GRISHIN, V. P. GUBANOV, V. B. ZORIN, A. A. KIM, E. V. KUMPJAK, et al. "Linear transformer accelerator for the excimer laser." Laser and Particle Beams 21, no. 2 (April 2003): 219–22. http://dx.doi.org/10.1017/s026303460321209x.

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A high-current accelerator for pumping of the 200-L excimer laser is developed, providing electron energy of 550 keV, a diode current of 320 kA, and an e-beam current of 250 kA. The high-voltage part of the accelerator consists of two linear transformers with a stored energy of 98 kJ. To reduce the influence of the self-magnetic field on e-beam formation, the vacuum diode is divided into six separate magnetically isolated diodes.

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Hasan, Syed M. N., Weicheng You, Md Saiful Islam Sumon, and Shamsul Arafin. "Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands." Photonics 8, no. 7 (July 8, 2021): 267. http://dx.doi.org/10.3390/photonics8070267.

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The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and -C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitride materials and their alloys, in particular AlGaN, are the material of choice for the development of this ultrashort-wavelength laser technology. Despite significant progress in AlGaN-based light-emitting diodes (LEDs), the technological advancement and innovation in diode lasers at these spectral bands is lagging due to several technical challenges. Here, the authors review the progress of AlGaN electrically-pumped lasers with respect to very recent achievements made by the scientific community. The devices based on both thin films and nanowires demonstrated to date will be discussed in this review. The state-of-the-art growth technologies, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates used for the laser demonstrations will be highlighted. We will also outline technical challenges associated with the laser development, which must be overcome in order to achieve a critical technological breakthrough and fully realize the potential of these lasers.

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Wu, Jin Ling, Xin Nian Wang, and Lan Dang Yuan. "Study of Deformation in the Active Region of GaAs/GaAlAs Laser Diodes." Applied Mechanics and Materials 333-335 (July 2013): 332–35. http://dx.doi.org/10.4028/www.scientific.net/amm.333-335.332.

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The paper presents an investigation of deformation in the active region of GaAs laser diodes under operating conditions.Since the properties of bulk material and manufactured diode are not identical,a study of the spectral splitting and polarisation changes caused by mechanical stress in the diode is made.These results are used to calibrate instruments for a study of the deformation due to thermal stress in the diode under operating conditions.This thermal stress can exceed the shear stress required for dislocation motion in the active region of the diode.

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35

Jiao, Qianqian, Tao Zhu, Hang Zhou, and Qingling Li. "Improved Electrical Characteristics of 1200V/20A 4H-SiC Diode by Substrate Thinning and Laser Annealing." Journal of Physics: Conference Series 2083, no. 2 (November 1, 2021): 022094. http://dx.doi.org/10.1088/1742-6596/2083/2/022094.

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Abstract In this paper, two kinds of silicon carbide (SiC) backside metallization processes were developed, which were backside thinning combined with laser annealing to form ohmic contact and direct rapid annealing (RTA) to form ohmic contact. The specific contact resistivity obtained by both annealing processes was 3.4E-5 Ω·cm2 to 3.8E-5 Ω·cm2. In order to obtain the effect of thinning combined with laser annealing process on forward conduction characteristics of medium voltage devices,1200V/20A JBS diode was developed, and the backside contact adopted the above two annealing schemes, the thickness of 4H-SiC substrate is 200μm. According to the statistical results of hundreds of JBS diodes, the electrical characteristics of the two types JBS are basically the same. Compared with the JBS diode without substrate thinning, the forward conduction voltage (VF) of the thinned JBS diode is decreased about 0.048V. When the substrate of 1200V SiC JBS diodes is reduced to 80μm, the value of VF can only be reduced by about 0.0868V.

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SCHERER, A., J. O’BRIEN, G. ALMOGY, W. H. XU, A. YARIV, J. L. JEWELL, K. UOMI, B. J. YOO, and R. J. BHAT. "VERTICAL CAVITY SURFACE EMITTING LASERS WITH DIELECTRIC MIRRORS." International Journal of High Speed Electronics and Systems 05, no. 04 (December 1994): 543–67. http://dx.doi.org/10.1142/s012915649400022x.

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We have developed new low threshold surface emitting laser designs with dielectric high reflectivity top mirrors. Here, we describe the characteristics of these surface emitting vertical cavity lasers (VCSELs) which exhibit stable mode patterns and low threshold currents. The new device fabrication sequence which we employ is able to adjust the emission wavelength of the lasers during the final fabrication step and allow the development of stable multi-wavelength laser arrays. These quantum-well based laser diodes are demonstrated at 0.72 μm with threshold currents of 20 mA, at 0.85 μm with threshold currents of 3 mA, at 0.98 μm with threshold currents of 4 mA, and at 1.55 μm with threshold currents of 17 mA. Our VCSELs also display remarkably low threshold voltages, thus minimizing the laser power dissipation and improving the wallplug efficiency. The flexibility resulting from depositing one or both of the mirrors after the fabrication of the laser diodes opens the way to the development of new and more versatile laser structures.

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37

Volluet, G., B. Groussin, T. Fillardet, C. Carrière, and A. Parent. "High power laser diodes." Journal de Physique III 2, no. 9 (September 1992): 1713–26. http://dx.doi.org/10.1051/jp3:1992207.

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38

Fitzgerald, Richard J. "Lighting with laser diodes." Physics Today 66, no. 9 (September 2013): 18. http://dx.doi.org/10.1063/pt.3.2107.

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39

Nakamura, Shuji. "InGaN-BASED LASER DIODES." Annual Review of Materials Science 28, no. 1 (August 1998): 125–52. http://dx.doi.org/10.1146/annurev.matsci.28.1.125.

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40

Raven, Tony. "Laser diodes save sight." Physics World 2, no. 9 (September 1989): 22. http://dx.doi.org/10.1088/2058-7058/2/9/17.

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41

MATAKI, Hiroshi. "Near-infrared Laser Diodes." Kobunshi 45, no. 2 (1996): 102. http://dx.doi.org/10.1295/kobunshi.45.102.

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42

Haase, M. A., J. Qiu, J. M. DePuydt, and H. Cheng. "Blue‐green laser diodes." Applied Physics Letters 59, no. 11 (September 9, 1991): 1272–74. http://dx.doi.org/10.1063/1.105472.

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43

Khan, Asif. "Laser diodes go green." Nature Photonics 3, no. 8 (August 2009): 432–34. http://dx.doi.org/10.1038/nphoton.2009.124.

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44

VOLLUET, G., and G. MARQUEBIELLE. "HIGH POWER LASER DIODES." Le Journal de Physique IV 01, no. C7 (December 1991): C7–781—C7–781. http://dx.doi.org/10.1051/jp4:19917208.

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45

Stanczyk, S., A. Kafar, T. Suski, P. Wisniewski, R. Czernecki, M. Leszczynski, M. Zajac, and P. Perlin. "InGaN tapered laser diodes." Electronics Letters 48, no. 19 (2012): 1232. http://dx.doi.org/10.1049/el.2012.2459.

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46

DePuydt, J. M., M. A. Haase, J. Qiu, and H. Cheng. "ZnSe-based laser diodes." Journal of Crystal Growth 117, no. 1-4 (February 1992): 1078. http://dx.doi.org/10.1016/0022-0248(92)90920-e.

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47

Itoh, S., and A. Ishibashi. "ZnMgSSe based laser diodes." Journal of Crystal Growth 150 (May 1995): 701–6. http://dx.doi.org/10.1016/0022-0248(95)80031-7.

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48

Pai, Kai-Jun, and Chang-Hua Lin. "Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation." Processes 9, no. 11 (November 4, 2021): 1975. http://dx.doi.org/10.3390/pr9111975.

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In this paper, a dynamic operational linear regulator (DOLR) based on a GaN high-electron-mobility transistor (HEMT) and wide-bandwidth operational amplifier was developed and implemented. The driving current could be regulated and controlled by the DOLR for 632 nm laser diodes. The constant-current mode for the continuous-wave laser and the pulse-width modulation (PWM) mode for the short-pulsed laser were realizable using this DOLR. This study focused on the rising-edge time change on the laser driving current when the DOLR was operated under the high-frequency PWM mode, because the parasitic components on the GaN HEMT, laser diodes, printed circuit board, and power wires could influence the current’s dynamic behavior. Therefore, the equivalent circuit models of the laser diode and GaN HEMT were applied to establish a DOLR simulation circuit in order to observe the rising-edge time change on the laser driving current. A DOLR prototype was achieved, and so experimental waveform measurements could be implemented to verify the DOLR simulation and operation.

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49

Krishnan, S., G. C. D'Couto, M. I. Chaudhry, and S. V. Babu. "Excimer laser-induced doping of crystalline silicon carbide films." Journal of Materials Research 10, no. 11 (November 1995): 2723–27. http://dx.doi.org/10.1557/jmr.1995.2723.

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0.25 μm thick, single crystal, n-type, silicon carbide (β-SiC) films thermally grown on p-type Si(100) were doped with boron by using KrF excimer laser radiation and a spin-on dopant with a boron concentration of 1020/cm3. The threshold fluence for the doping to occur was approximately 0.08 J/cm2. Similarly, p-SiC/n-SiC diodes were fabricated by laser-induced doping of single-crystal β-SiC (n-type, 6 μm thick) films on n-type Si(100). The diodes obtained at 0.25 J/cm2 showed good rectifying characteristics. The threshold fluence for surface modification and/or ablation was approximately 0.3 J/cm2, indicating that doping and diode formation have to be accomplished within the fluence window of 0.08 J/cm2-0.3 J/cm2 for these films.

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Yu, Z., J. Ren, J. W. Cook, and J. F. Schetzina. "Blue/green laser diodes and light emitting diodes." Physica B: Condensed Matter 191, no. 1-2 (September 1993): 119–23. http://dx.doi.org/10.1016/0921-4526(93)90183-7.

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