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Relevant bibliographies by topics / Laser diodes

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Academic literature on the topic 'Laser diodes'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 March 2023

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Journal articles on the topic "Laser diodes"

1

Li, Zai Jin, Yi Qu, Te Li, Peng Lu, Bao Xue Bo, Guo Jun Liu, and Xiao Hui Ma. "The Characteristics of Facet Coatings on Diode Lasers." Advanced Materials Research 1089 (January 2015): 202–5. http://dx.doi.org/10.4028/www.scientific.net/amr.1089.202.

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The effect of the output power with different facet passivation methods on 980 nm graded index waveguide structure InGaAs/AlGaAs laser diodes was studied. The output power of the 980 nm laser diodes with Si passivation, and ZnSe passivation at the front and the back facet were compared. The test results show that output power of the ZnSe passivation method is 11% higher than Si passivation method. The laser diode with the Si passivation film is failure when current is 5.1 A, the laser diode with the ZnSe passivation film is not failure until current is 5.6 A And we analyzed the failure reasons for each method. In conclusion, the method of coated ZnSe passivation on the laser diode facet can effectively increase the output power of semiconductor lasers.

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KAWAGUCHI, H. "POLARIZATION BISTABLE LASER DIODES." Journal of Nonlinear Optical Physics & Materials 02, no. 03 (July 1993): 367–89. http://dx.doi.org/10.1142/s021819919300022x.

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Static and dynamic characteristics of a pitchfork bifurcation polarization bistability in a laser diode are analyzed using rate-equations taking account of nonlinear gain. It is shown that the bistable laser diode has the advantage of high-speed switching when trigger optical pulses are coupled coherently to the bistable laser output. Experimental results on this new polarization bistability in a laser diode with a two-armed polarization-selective external cavity are also described with a brief review of recent progress in research on polarization bistable laser diodes.

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Bumai, Yurii, Aleh Vaskou, and Valerii Kononenko. "Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes." Metrology and Measurement Systems 17, no. 1 (January 1, 2010): 39–45. http://dx.doi.org/10.2478/v10178-010-0004-x.

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Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

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Parshin, V. A., V. V. Bliznyuk, and A. V. Dolgov. "Polarization stability of the single-mode laser diodes radiation applied in radiation scattering study complexes." Journal of Physics: Conference Series 2127, no. 1 (November 1, 2021): 012040. http://dx.doi.org/10.1088/1742-6596/2127/1/012040.

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Abstract Key features of semiconductor lasers and its serially manufacturing technology modernization have greatly expanded of its using at applied studies at last 20 years. But there is set of factors restricting such lasers application in a number of optical-electronic measuring complexes. Particularly in particle image velocimetry (PIV) and laser Doppler velocimetry (LDV) complexes commonly the gas and solid-state lasers is used due to more stability of spectral, energy and polarization characteristics of radiation then semiconductor lasers have. However gradual introduction of the serially manufacturing laser diodes into such systems picking up the pace that certainly characterizes the progress of reaching the required stability of its output laser radiation parameters. In laser measurement systems where medium investigation carried out by analyzing of scattering radiation in it the probe radiation polarization is often important. So the using in such systems the laser diodes as sources of radiation need to be followed by stability monitoring of its polarization characteristics which may be violated both by the outer factors and by natural degradation of inner laser diode structure. This work is devoted to the issues of monitoring the radiation polarization characteristics of the serially manufacturing single-mode laser diodes.

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RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.

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Sharma, Rishi Kant, Shammi Wadhwa, N. K. Verma, M. N. Reddy, and H. Rana. "Evaluation of 976 nm Multimode Single Emitter Laser Diodes for Efficient Pumping of 100 W+ Yb-doped Fiber Laser." Defence Science Journal 67, no. 1 (December 23, 2016): 88. http://dx.doi.org/10.14429/dsj.67.9962.

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<p>Experimental evaluation of spectral and power-current (P-I) characteristics of fiber coupled single emitter multimode laser diodes used for development of efficient pumping assembly is reported. Fiber coupled laser diodes emitting around 976 nm are best suited for pumping Yb-doped fiber lasers because of excellent coupling efficiency and reduced thermal load. We have experimentally investigated emission spectrum of fiber coupled multimode laser diodes at different temperatures and drive currents. It is found that peak emission wavelength shifts towards the longer wavelength with increase in temperature and drive current. P-I characteristics of fiber coupled laser diodes have been obtained and presented for drive current from 0.4 A to 11.5 A. Based on experiment, we have constructed spectrally matched laser diode assembly for efficient pumping of 100 W fiber laser. It requires very precise control of temperature and drive current to maintain the emission spectrum. Total 162 W power is pumped in to the Yb-doped fiber laser cavity through multi-mode pump combiners and we have obtained 110 W fiber laser output power @1070 nm. The achieved optical-to-optical efficiency is 68 per cent.</p>

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Alander, Tapani M., Pekka A. Heino, and Eero O. Ristolainen. "Analysis of Substrates for Single Emitter Laser Diodes." Journal of Electronic Packaging 125, no. 3 (September 1, 2003): 313–18. http://dx.doi.org/10.1115/1.1527657.

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Electrically conductive substrates (i.e., metals) are often used in the mounting of semiconductor laser diodes. While metals offer a good electrical and thermal performance, they restrict the system integration due to lack of signal routing capability. Since the implementations utilizing laser diodes have become more common, the integration level has also become an important factor in these products. Mounting of lasers on insulative substrates is the key to large-scale integration. Organic boards form the de facto standard of insulative substrates; however, their use with lasers is impossible due to low thermal conductivity. Ceramics, however, offer nearly the same thermal performance as metals but as electrically insulative materials also provide the foundation for high integration levels. In this study the effects of three different ceramic substrates on the stresses within diode lasers was evaluated. Finite element method was used to calculate the mounting induced straining and the thermal performance of the substrate. The same procedure was employed to examine the optimum metallization thickness for the ceramic substrates. The results present how greatly the substrate material can affect the very delicate laser diode. The ceramic substrates, though having nearly the same properties, exhibited clearly distinctive behavior and a great difference in thermal and mechanical performance.

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Stelmakh, N. "Sub-Picosecond Mode-Locked Laser Diodes." International Journal of High Speed Electronics and Systems 08, no. 03 (September 1997): 525–46. http://dx.doi.org/10.1142/s0129156497000196.

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Recent experiments have shown that laser diodes are capable generating nulses as short as 160 fs, thus approaching the performance of more conventional femtosecond lasers such as Tilsapphire lasers or dye lasers. Regular progress is also accomplished in terms of power and energy efficiency or spectral and spatial brightness with the development of novel semiconductor laser structures. In this paper, we review decisive improvements which have placed laser diodes in category of sub-picosecond lasers. A number of experimental results are used to illustrate the specific characteristics of short-pulse laser diodes as compared to other laser systems. The effects of dispersion and phase modulation are discussed on a basis of theoretical model of chirp mode locking.

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Bertling, Karl, Xiaoqiong Qi, Thomas Taimre, Yah Leng Lim, and Aleksandar D. Rakić. "Feedback Regimes of LFI Sensors: Experimental Investigations." Sensors 22, no. 22 (November 21, 2022): 9001. http://dx.doi.org/10.3390/s22229001.

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In this article, we revisit the concept of optical feedback regimes in diode lasers and explore each regime experimentally from a somewhat unconventional point of view by relating the feedback regimes to the laser bias current and its optical feedback level. The results enable setting the operating conditions of the diode laser in different applications requiring operation in different feedback regimes. We experimentally explored and theoretically supported this relationship from the standard Lang and Kobayashi rate equation model for a laser diode under optical feedback. All five regimes were explored for two major types of laser diodes: inplane lasers and vertical-cavity surface emitting lasers. For both lasers, we mapped the self-mixing strength vs. drive current and feedback level, observed the differences in the shape of the self-mixing fringes between the two laser architectures and a general simulation, and monitored other parameters of the lasers with changing optical feedback.

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Sherniyozov, А. А., F. A. Shermatova, Sh D. Payziyev, Sh A. Begimkulov, F. M. Kamoliddinov, A. G. Qahhorov, and A. G. Aliboyev. "Simulation of physical processes in light-emitting diode pumped lasers." «Узбекский физический журнал» 23, no. 3 (December 7, 2021): 38–42. http://dx.doi.org/10.52304/.v23i3.262.

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We have developed an end-to-end simulation model for the light-emitting diode-pumped solidstate laser using the Monte Carlo photon tracing technique. The model considers complete specifics and spectral characteristics of light-emitting diodes. This model is the first of its kind to enable comprehensive analysis of light-emitting diode-pumped laser systems to the best of our knowledge. The model revealed several critical implications, which can be considered in the practical realization of light-emitting diode-pumped lasers.

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Dissertations / Theses on the topic "Laser diodes"

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Lau, Fat Kit. "Tapered waveguide laser diodes." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611648.

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Cappuccio, Joseph C. "Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit/." Thesis, Monterey, California. Naval Postgraduate School, 1988. http://hdl.handle.net/10945/23114.

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This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse modulate (digital) the laser diode output for data transmission was a major design consideration. Laser optical power is controlled via a closed loop system using a monitor photodiode. Laser diode temperature stabilization is accomplished with the use of a thermoelectric cooler. Laboratory and remote applications were considered in the design of this unit. (rh)

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Schimmel, Guillaume. "Combinaison cohérente de diodes laser de puissance." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLO018/document.

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La capacité des sources laser à concentrer une quantité d’énergie énorme intéresse beaucoup le secteur industriel pour l’usinage et la structuration de la matière. Il faut pour cela rassembler une forte puissance optique sur une surface infime: on parle alors de luminance. La combinaison cohérente permet de répondre à la problématique de l’augmentation de la luminance d’un système laser. Dans le cadre du projet européen BRIDLE, ces travaux sont focalisés sur la combinaison cohérente de lasers à semi-conducteur. Ce type de combinaison nécessite un accord de phase stable entre les différents émetteurs. Plusieurs techniques permettent cette mise en phase; nous étudions en particulier les techniques d’amplification en parallèle ainsi que l’utilisation d’une cavité externe commune. L’originalité se situe dans le développement d’une architecture nouvelle, pensée pour optimiser l’extraction de puissance. La technique consiste à utiliser une cavité étendue commune aux émetteurs à combiner pour leur mise en phase, placée sur leur face arrière. Tout en fournissant un fort retour optique arrière nécessaire à la mise en phase, l’extraction de puissance est maximisée sur la face avant où les faisceaux sont par la suite combinés extracavité. Ce document démontre la bonne adéquation de cette architecture avec les meilleures diodes laser en termes de luminance : les émetteurs à section évasée. L’étude est étendue à une barrette de diodes par l’utilisation d’éléments diffractifs optique permettant la séparation et la combinaison des faisceaux
Scaling up the brightness of laser diodes is a major research objective in the laser community. The coherent beam of several emitters is the most efficient technique to increase the brightness by constructive interference. An efficient combination can only be achieved in an arrangement that forces the required phase relation between the emitters. Different approaches are investigated: either active phase-locking of amplifiers seeded by a single-frequency laser split into N beams and amplified in parallel, or passive selforganization of emitters in a common laser cavity. We investigate a new coherent combining architecture using a common extended cavity on the back side of diode lasers for phase locking. As a result, the efficiency of the phase-locked laser cavity is increased as compared to standard front-side configurations. Moreover, such an extended cavity placed on the rear-side provides the strong optical feedback required for phase-locked operation. This configuration is demonstrated with high-brightness tapered devices, highlighting the capability of such setup for high power operation. This architecture is then extended to diode laser arrays by the use of diffractive optical elements

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Van, Dommelen Ronnie Francis. "Bistable distributed feedback laser diodes." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0020/MQ48293.pdf.

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Huang, G. "Wavelength stabilisation in laser diodes." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604711.

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This thesis discusses the wavelength stabilisation of semiconductor lasers for WDM applications. The motivation is to explore the potential of a novel athermal WDM laser with much less wavelength drift than conventional lasers, and without the traditional external temperature compensation units. The study is mainly theoretical, but some experimental work is included. Based on the Cambridge time domain model, intensive simulation has been done to investigate the design space of DBR lasers. Although the structure of the initial prototype DBR model is simple, the simulation output results are rather complex. All the main parameters such as grating length, grating coupling strength, total laser cavity length and waveguide scattering loss are varied. Results obtained agree with current measurements on DBR lasers, and support dimensions and structures derived empirically. Based upon the above results, simulation work then goes further towards the athermal WDM laser idea which employs negative temperature coefficient material to physically compensate the frequency variation with temperature. A polymer widely used in optical waveguides is one candidate. Having reviewed temperature dependent parameters in semiconductor lasers, we incorporated these into the Cambridge Time Domain model. It predicts a wavelength shift of about 0.75 nm over a 100^oC range at wavelength of 1500 nm where about 9nm would be expected from a normal DFB laser. It also reveals other complex and interesting behaviour, which is likely to give several useful insights into the behaviour of tuneable and other forms of DBR and BFB lasers. An experiment to verify the athermal effect of a polymer has been done. Focussed ion beam etch was employed to form a deep grating in near-conventional FP laser, and the grating voids were filled with the polymer. Lasing action with good wavelength stability was observed, though the particular structure employed is probably not capable of single mode operation over a wide temperature range.

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Spencer, Peter David. "Quantum dot bilayer laser diodes." Thesis, Imperial College London, 2008. http://hdl.handle.net/10044/1/1413.

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Optical communication was developed to allow high-speed and long-distance data transmission and is currently a £6bn market. This has also led to the adoption of optical technologies in other areas including the CD, DVD and medical imaging systems. Standardisation of components means that these systems require light sources that operate near the 1310 and 1550 nm telecommunications windows but existing lasers here are expensive due to their high temperature sensitivity. The exploitation of quantum con¯nement has led to the development of \quan- tum dot" (QD) laser material because of predictions of huge gains in performance. Emission wavelengths of InAs/GaAs QD lasers have been extended to the telecom- munications window near 1300 nm by various growth technologies and the first commercial devices have recently been brought to the market. However, progress to longer wavelengths has been stalled for several years as well as the speed and tem- perature sensitivity of these devices falling short of the predictions; partly because QDs are grown by self-assembly resulting in a random distribution of sizes, compo- sitions and strain-states, leading to inhomogeneous broadening which is a departure from the ideal \atom-like" system. This work details the growth, design and development of QD bilayer laser devices, which o®er a unique approach to fixing these shortcomings. When two QD layers are grown close together; the first layer provides a template that allows larger, more uniform QDs to be grown in the second layer, giving greater uniformity and deeper confinement. This has the potential to increase the efficiency and to achieve emission wavelengths out towards the more-commonly used telecommunications window at 1550 nm directly on GaAs substrates. Multiple bilayer laser diodes with inhomge- neous broadening of less than 30meV, lasing at up to 1430 nm and room-temperature photoluminescence at 1515 nm are shown. Despite the vastly reduced inhomogeneous broadening of QD bilayers, it is still found to be a relevant factor due to the change from de-localised geometries of quantum wells to an ensemble of separate QDs. It will be shown that understanding this is essential for describing the observed optical and electrical behaviour of the laser diodes.

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Meyers, Mark. "Laser diodes incorporating diffractive features /." Online version of thesis, 1990. http://hdl.handle.net/1850/11233.

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Lochner, Zachary Meyer. "Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33827.

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This thesis describes the development of III-Nitride materials for light emitting applications. The goals of this research were to create and optimize a green light emitting diode (LED) and laser diode (LD). Metalorganic chemical vapor deposition (MOCVD) was the technique used to grow the epitaxial structures for these devices. The active regions of III-Nitride based LEDs are composed of InₓGa₁₋ₓN, the bandgap of which can be tuned to attain the desired wavelength depending on the percent composition of Indium. An issue with this design is that the optimal growth temperature of InGaN is lower than that of GaN, making the growth temperature of the top p-layers critical to the device performance. Thus, an InGaN:Mg layer was used as the hole injection and p-contact layers for a green led, which can be grown at a lower temperature than GaN:Mg in order to maintain the integrity of the active region. However, the use of InGaN comes with its own set of drawbacks, specifically the formation of V-defects. Several methods were investigated to suppress these defects such as graded p-layers, short period supper lattices, and native GaN substrates. As a result, LEDs emitting at ~532 nm were realized. The epitaxial structure for a III-Nitride LD is more complicated than that of an LED, and so it faces many of the same technical challenges and then some. Strain engineering and defect reduction were the primary focuses of optimization in this study. Superlattice based cladding layers, native GaN substrates, InGaN waveguides, and doping optimization were all utilized to lower the probability of defect formation. This thesis reports on the realization of a 454 nm LD, with higher wavelength devices to follow the same developmental path.

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Lee, Junho. "Semiconductor diode laser with saturable absorber (S-laser)." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0004277.

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Nyamuda, Gibson Peter. "Design and development of an external cavity diode laser for laser cooling and spectroscopy applications." Thesis, Link to the online version, 2006. http://hdl.handle.net/10019/1146.

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Books on the topic "Laser diodes"

1

Jens, Buus, ed. Tunable laser diodes. Boston: Artech House, 1998.

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Scheibenzuber, Wolfgang G. GaN-Based Laser Diodes. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1.

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Introduction to laser diode-pumped solid state lasers. Bellingham, Wash: SPIE Press, 2002.

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J, Linden Kurt, Akkapeddi Prasad R, Society of Photo-optical Instrumentation Engineers., and United States. Advanced Research Projects Agency., eds. Laser diodes and applications II. Bellingham, WA: SPIE, 1996.

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Dan, Botez, and Scifres Don R, eds. Diode laser arrays. Cambridge: Cambridge University Press, 1994.

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Panajotov, Krassimir P. Semiconductor lasers and laser dynamics III: 7-9 April 2008, Strasbourg, France. Edited by SPIE Europe, Alsace international, Association française des industries de l'optique et de la photonique, and Society of Photo-optical Instrumentation Engineers. Bellingham, Wash: SPIE, 2008.

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A, Yoshikawa, and International Symposium on Blue Laser and Light Emitting Diodes (1996 : Chiba Daigaku), eds. Blue laser and light emitting diodes. Tokyo, Japan: Ohmsha, 1996.

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Patrick, Vankwikelberge, ed. Handbook of distributed feedback laser diodes. Boston: Artech House, 1997.

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Gärtner, Christian. Organic laser diodes: Modelling and simulation. Karlsruhe: Univ.-Verl. Karlsruhe, 2008.

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S, Sudo, and Sakai Yoshihisa, eds. Frequency stabilization of semiconductor laser diodes. Boston: Artech House, 1995.

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Book chapters on the topic "Laser diodes"

1

Ebeling, Karl Joachim. "Laser Diodes." In Integrated Optoelectronics, 303–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78166-7_10.

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Amano, Hiroshi. "Electroluminescent Diodes and Laser Diodes." In Nitride Semiconductors, 529–46. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607641.ch11.

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Chow, Weng W., Stephan W. Koch, and Murray Sargent. "Semiconductor Laser Diodes." In Semiconductor-Laser Physics, 1–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-61225-1_1.

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Buus, Jens. "Tunable Laser Diodes." In Photonic Networks, 91–102. London: Springer London, 1997. http://dx.doi.org/10.1007/978-1-4471-0979-2_9.

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Schmid, W., and U. Strauß. "9.2 Laser diodes in the visible spectral range: Red-emitting laser diodes." In Laser Systems, 38–53. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14177-5_4.

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Scheibenzuber, Wolfgang G. "Short-Pulse Laser Diodes." In GaN-Based Laser Diodes, 67–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_7.

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Nakano, K., and A. Ishibashi. "Blue-emitting laser diodes." In Advances in Solid State Physics, 65–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/bfb0107521.

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Debrégeas-Sillard, Hélène. "Widely Tuneable Laser Diodes." In Springer Series in Optical Sciences, 189–226. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-20517-0_5.

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Dems, Maciej. "Photonic Crystal Laser Diodes." In Handbook of Optoelectronic Device Modeling and Simulation, 561–84. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] |: CRC Press, 2017. http://dx.doi.org/10.4324/9781315152318-20.

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Bour, David P., and Michael Kneissl. "AlGaInN MQW Laser Diodes." In III-V Nitride Semiconductors, 439–502. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-10.

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Conference papers on the topic "Laser diodes"

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Aharoni, A., J. W. Goodman, and Y. Amitai. "An efficient holographic collimator for 820 nm laser diodes." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.mcc1.

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High-quality collimation and focusing of laser diode beams is hindered by their asymmetric divergence and elliptical beam section. These result from the large aspect ratio of the source. In gain-guided diode lasers the beam also suffers astigmatism due to the lensing effects of the nonuniform current porofile. A holographic correcting and collimating element for such diodes is desirable for its low mass-production cost and small dimensions. Efficient holograms cannot, however, be recorded directly with the infrared wavelengths of diode lasers, and normally large aberrations and low efficiencies are obtained when recording with shorter wavelengths. Using a recursive holographic method1 we recorded a hologram with blue light that collimates a 820 nm diode beam with low aberrations and high efficiency. This element corrects for the diode's astigmatism and ellipticity and achieves near-diffraction-limited collimation. The design can also alleviate effects due to diode wavelength instability.

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Coetzee, Frans M., and David P. Casasent. "Focusing and collimating laser diodes and laser diode arrays." In San Diego, '91, San Diego, CA, edited by Chandrasekhar Roychoudhuri and Wilfrid B. Veldkamp. SPIE, 1991. http://dx.doi.org/10.1117/12.49378.

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3

Masuda, Hisashi, Fumisada Maeda, Michio Oka, Yushi Kaneda, Minako Sugiura, and Shigeo Kubota. "Miniature integrated SHG green laser." In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.fa3.

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Diode-pumped intracavity frequency doubled Nd:YAG lasers have been intensively investigated. Low noise characteristics of such a laser as well as its shorter wavelength than conventional laser diodes are attractive features for the higher density optical disk applications.1

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4

Daiminger, Franz X., Friedhelm Dorsch, and Dirk Lorenzen. "High-power laser diodes, laser diode modules, and their applications." In Laser Optics '98, edited by Vladimir I. Ustugov. SPIE, 1998. http://dx.doi.org/10.1117/12.334785.

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5

Grempel, Hermann, Nikolay I. Katsavets, Alexander L. Ter-Martirosyan, Christoph von Kopylow, and Egon Pfeifer. "Requirements of pump diodes for diode-pumped solid state lasers." In Laser Optics '98, edited by Vladimir I. Ustugov. SPIE, 1998. http://dx.doi.org/10.1117/12.334795.

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6

Stelmakh, N., J.-M. Lourtioz, and D. Pascal. "Experimental analysis of gain modulation in Subpicosecond (0.45 Ps) Mode-Locked Laser Diodes." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/up.1992.fc12.

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Mode-locked laser diodes present important applications in the field of optical communications and are an interesting alternative to more conventional (sub)picosecond lasers for time-resolved spectroscopy and optical testing of various materials. During last years, many papers have been addressed to the experimental demonstration of laser diode mode-locking using different optical schemes and different types of diodes [1-4]. However, the mechanisms at the origin of coherent subpicosecond mode-locked pulses in laser diodes still remain unknown. In view of a better understanding of this phenomena, we propose a non-invasive method for probing the gain medium during the mode-locking process. Results are presented for a passively mode-locked AlGaAs laser emitting pulses as short as ~450 fs.

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Delfyett, Peter J., L. T. Florez, Y. Silberberg, D. H. Hartman, and G. A. Alphonse. "Applications of ultrafast laser diodes." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.wu2.

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Semiconductor lasers may play an important role in future photonic telecommunication switching networks. By mode-locking these semiconductor laser devices, compact and efficient sources become available for use in future photonic networks, ultrafast diagnostics, and high speed instrumentation. This talk presents recent results on the generation and application of high power ultrashort optical pulses from semiconductor laser diodes. The pulse duration and peak power of the generated optical pulses are 207 fs and 165 W, respectively, making these pulses both the shortest and most intense ever generated from an all semiconductor diode laser system. Applications of these high power optical pulses include ultrafast spectroscopy, where the nonlinear gain dynamics of the amplification process in traveling wave amplifiers have been investigated by using standard time resolved pump-probe techniques. Other applications utilizing these high power optical pulses will also be discussed, with an emphasis on optical clock distribution and network synchronization for SONET networks, high speed switching systems, and supercomputers.

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Höfling, S., C. Schneider, M. Amthor, N. Y. Kim, A. Rahimi-Iman, I. G. Savenko, I. A. Shelykh, et al. "Polariton Laser Diodes." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/acpc.2014.ath1b.2.

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Köck, A., C. Gmachl, E. Gornik, L. Korte, M. Rosenberger, and P. Lustoza de Souza. "Surface mode-coupling in GaAs/AlGaAs laser diodes—a new technique for a single mode laser." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cthg2.

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Single longitudinal mode laser diodes are of high interest for optical fiber transmission systems. Among the many types of single mode laser diode structures the distributed feedback (DFB) laser diode presently seems to be most promising.

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Itaya, K., and G. Hatakoshi. "InGaAlP visible-light laser diodes." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/oam.1993.tug.1.

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Considerable progress has been made in the development of short-wavelength InGaAlP visible light laser diodes. This paper describes problems and our achievements in the design and fabrication of InGaAlP lasers.

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Reports on the topic "Laser diodes"

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Phifer, Carol Celeste. Effects of radiation on laser diodes. Office of Scientific and Technical Information (OSTI), September 2004. http://dx.doi.org/10.2172/919636.

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Gunshor, Robert L. Electrical Properties of Blue Laser Diodes. Fort Belvoir, VA: Defense Technical Information Center, July 1998. http://dx.doi.org/10.21236/ada361825.

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VAWTER, GREGORY A., ALAN MAR, WENG W. CHOW, and ANDREW A. ALLERMAN. Advanced laser diodes for sensing applications. Office of Scientific and Technical Information (OSTI), January 2000. http://dx.doi.org/10.2172/752016.

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Lau, Kam Y. Research in Micro--Cavity Surface Emitting Laser Diodes. Fort Belvoir, VA: Defense Technical Information Center, March 1996. http://dx.doi.org/10.21236/ada305485.

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Ury, I., and Kam Y. Lau. Band Structure Engineering for Ultra-Low Threshold Laser Diodes. Fort Belvoir, VA: Defense Technical Information Center, January 1988. http://dx.doi.org/10.21236/ada206932.

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Venus, George, Vadim Smirnov, Leonid Glebov, and Manoj Kanskar. Spectral Stabilization of Laser Diodes by External Bragg Resonator. Fort Belvoir, VA: Defense Technical Information Center, January 2004. http://dx.doi.org/10.21236/ada452556.

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Lin, Jingyu, and Hongxing Jiang. AlInGaN Bandgap and Doping Engineering for Visible Laser Diodes. Fort Belvoir, VA: Defense Technical Information Center, May 2010. http://dx.doi.org/10.21236/ada520632.

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Leisher, P., R. Deri, and V. Tang. New Framework to Prevent Catastrophic Damage to Laser Diodes. Office of Scientific and Technical Information (OSTI), December 2019. http://dx.doi.org/10.2172/1577237.

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Klimov, Victor. Prospects & Challenges of Colloidal Quantum Dot Laser Diodes. Office of Scientific and Technical Information (OSTI), May 2021. http://dx.doi.org/10.2172/1782627.

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Pencheva, Vasilka, Stoyan Penchev, Tanja Dreischuh, and Sergey Naboko. Dial Hygrometer Utilizing Powerful Laser Diodes: Progress towards Diurnal Operation. "Prof. Marin Drinov" Publishing House of Bulgarian Academy of Sciences, January 2021. http://dx.doi.org/10.7546/crabs.2021.01.04.

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