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Journal articles on the topic 'Junction field-effect transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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1

Lüssem, Björn, Hans Kleemann, Daniel Kasemann, Fabian Ventsch, and Karl Leo. "Organic Junction Field-Effect Transistor." Advanced Functional Materials 24, no. 7 (October 24, 2013): 1011–16. http://dx.doi.org/10.1002/adfm.201301417.

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2

Chaw, Chaw Su Nandar Hlaing, and Thiri Nwe. "Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor." Journal La Multiapp 1, no. 2 (June 21, 2020): 14–21. http://dx.doi.org/10.37899/journallamultiapp.v1i2.108.

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This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

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3

NAKAMURA, Shigeki, and Shinichi OKAMOTO. "Radiation Dosimetry with Junction Field-effect Transistor." RADIOISOTOPES 36, no. 1 (1987): 1–6. http://dx.doi.org/10.3769/radioisotopes.36.1.

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4

Zolper, J. C., R. J. Shul, A. G. Baca, R. G. Wilson, S. J. Pearton, and R. A. Stall. "Ion‐implanted GaN junction field effect transistor." Applied Physics Letters 68, no. 16 (April 15, 1996): 2273–75. http://dx.doi.org/10.1063/1.115882.

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5

Simmons, J. G., and G. W. Taylor. "New heterostructure junction field-effect transistor (HJFET)." Electronics Letters 22, no. 22 (1986): 1167. http://dx.doi.org/10.1049/el:19860799.

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6

Marcoux, J., J. Orchard-Webb, and J. F. Currie. "Complementary metal oxide semiconductor-compatible junction field-effect transistor characterization." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 982–86. http://dx.doi.org/10.1139/p87-156.

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We report on the fabrication and electrical characterization of a vertical junction-gate field-effect transistor (JFET) that is compatible with all complementary metal oxide semiconductor (CMOS) technologies. It can be used as a buried load for an enhancement n-channel metal oxide semiconductor field-effect transistor (n-MOSFET), replacing the p-MOSFET within the standard CMOS inverter configuration and resulting in a 40% net area economy in standard cells. To be entirely CMOS process compatible, this JFET device differs from others in the literature in that dopant concentrations in the n substrates (1014) and in the p wells (1015) are substantially lower. For integrated-circuit applications, one seeks to use the JFET with the smallest area to minimize parasitic capacitances and to maximize switching speeds. However, at these concentration levels, the dc current–voltage characteristics depend critically on the lateral dimension of the JFET's square channel. Above 10 μm, the characteristics are pentode-like and similar to those of a classic MOSFET. Below 10 μm, the channel is naturally pinched-off, and for reverse gate bias, the small JFETs are triode-like. There is also a nonreciprocity between the source and the drain when the source-to-drain voltage polarity is changed, which is due to the distance between the channel and the electrode collecting the carriers. When its gate is forward-biased, the small JFETs behave as bipolar transistors. Depending on source-to-drain voltage polarities, I–V characteristics exhibit saturation effects caused by base-widening phenomena at the JFET's drain contact.

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7

Das, N. C., C. Monroy, and M. Jhabvala. "Germanium junction field effect transistor for cryogenic applications." Solid-State Electronics 44, no. 6 (June 2000): 937–40. http://dx.doi.org/10.1016/s0038-1101(00)00013-7.

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8

Duane, Michael. "Metal–oxide–semiconductor field-effect transistor junction requirements." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 1 (January 1998): 306. http://dx.doi.org/10.1116/1.589800.

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9

Gity, Farzan, P. K. Hurley, and Lida Ansari. "Schottky-Junction TMD-Based Monomaterial Field-Effect Transistor." ECS Meeting Abstracts MA2020-01, no. 10 (May 1, 2020): 860. http://dx.doi.org/10.1149/ma2020-0110860mtgabs.

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10

Raj, D. V. "Radiation dosimetry using junction field-effect transistor detectors." Physics in Medicine and Biology 38, no. 8 (August 1, 1993): 1165–72. http://dx.doi.org/10.1088/0031-9155/38/8/015.

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11

Kumar, Prateek, Maneesha Gupta, Naveen Kumar, Marlon D. Cruz, Hemant Singh, Ishan, and Kartik Anand. "Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function." Sensor Letters 18, no. 6 (June 1, 2020): 468–76. http://dx.doi.org/10.1166/sl.2020.4236.

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With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI industry. This work is dedicated to the design and study of the novel tub-type Metal-Oxide-Semiconductor Field-Effect Transistor. For simulation Non-Equilibrium Green’s Function is used as the primary model of simulation. The device is analyzed under different physical variations like work function, permittivity, and interface trap charge. This work uses Silicon-Molybdenum Disulphide heterojunction and Silicon-Tungsten Disulphide heterojunction as channel material. Results for both the heterojunctions are compared. It was analyzed that Silicon-Molybdenum Disulphide heterojunction provides better linearity and Silicon-Tungsten Disulphide heterojunction provides better switching speed than conventional Metal-Oxide-Semiconductor Field-Effect Transistor.

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12

Kim, Kwang Bok, Ji-Hyung Han, Hee Chan Kim, and Taek Dong Chung. "Polyelectrolyte junction field effect transistor based on microfluidic chip." Applied Physics Letters 96, no. 14 (April 5, 2010): 143506. http://dx.doi.org/10.1063/1.3389492.

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13

Bendada, E., and K. Raïs. "Diode Physical Parameters for HEXFETs Characterization of Dose Effect." Active and Passive Electronic Components 21, no. 3 (1998): 199–208. http://dx.doi.org/10.1155/1998/26372.

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Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a precise description of the changes in conduction processes due to radiation damages in the integral body-drain junction. A large increase of the ideality factor and series resistance is related to radiation-induced defects.

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14

Caputo, D., G. de Cesare, P. delli Veneri, and M. Tucci. "Laser treatment of amorphous silicon junction field effect transistor channel." Journal of Non-Crystalline Solids 299-302 (April 2002): 1326–29. http://dx.doi.org/10.1016/s0022-3093(01)01096-1.

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15

Seiler, U., T. Hachbarth, and H. J. Herzog. "SiGe/Si hetero-field-effect-transistor with PN-junction gate." Thin Solid Films 380, no. 1-2 (December 2000): 204–6. http://dx.doi.org/10.1016/s0040-6090(00)01505-4.

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16

Chorng-Wei Liaw, Leaf Yeh, Ming-Jang Lin, and Chrong Jung Lin. "Pinch-Off Voltage-Adjustable High-Voltage Junction Field-Effect Transistor." IEEE Electron Device Letters 28, no. 8 (August 2007): 737–39. http://dx.doi.org/10.1109/led.2007.900869.

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17

Miyauchi, S., T. Dei, T. Tsubata, and Y. Sorimachi. "Junction field-effect transistor using polythiophene as an active component." Synthetic Metals 41, no. 3 (May 1991): 1155–58. http://dx.doi.org/10.1016/0379-6779(91)91576-v.

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18

Yoshida, Seikoh, and Joe Suzuki. "High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor." Journal of Applied Physics 85, no. 11 (June 1999): 7931–34. http://dx.doi.org/10.1063/1.370610.

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19

Tsai, Yu-Yang, Chun-Yu Kuo, Bo-Chang Li, Po-Wen Chiu, and Klaus Y. J. Hsu. "A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor." Micromachines 11, no. 6 (June 17, 2020): 596. http://dx.doi.org/10.3390/mi11060596.

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In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current–voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity. A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. In the PDOSFET, a graphene/polycrystalline silicon photodiode was directly merged on top of the gate oxide of a conventional metal–oxide–semiconductor field effect transistor (MOSFET). The magnitude of the channel current of this phototransistor showed a logarithmic dependence on the illumination level. It is shown in this work that the PDOSFET facilitates a better pixel design in a complementary metal–oxide–semiconductor (CMOS) image sensor, especially beneficial for high dynamic range (HDR) image detection.

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20

Dvornikov, O. V., V. A. Tchekhovski, V. L. Dziatlau, A. V. Kunts, and N. N. Prokopenko. "Low temperature multi-differential operational amplifier." Doklady BGUIR 19, no. 5 (August 26, 2021): 52–60. http://dx.doi.org/10.35596/1729-7648-2021-19-5-52-60.

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A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples.

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21

Hayashi, Yujiro, Kazunori Tanaka, Tatsushi Akazaki, Masafumi Jo, Hidekazu Kumano, and Ikuo Suemune. "Luminescence observed from a junction field-effect transistor with Nb/n-InGaAs/Nb junction." physica status solidi (c) 5, no. 9 (July 2008): 2816–18. http://dx.doi.org/10.1002/pssc.200779278.

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22

Yeo, Yee-Chia, Genquan Han, Yue Yang, and Pengfei Guo. "(Invited) Strain Engineering and Junction Design for Tunnel Field-Effect Transistor." ECS Transactions 33, no. 6 (December 17, 2019): 77–87. http://dx.doi.org/10.1149/1.3487536.

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23

Guo, P., Y. Yang, Y. Cheng, G. Han, C. K. Chia, and Y. C. Yeo. "Tunneling Field-Effect Transistor (TFET) with Novel Ge/In0.53Ga0.47As Tunneling Junction." ECS Transactions 50, no. 9 (March 15, 2013): 971–78. http://dx.doi.org/10.1149/05009.0971ecst.

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24

Sahni, Subal, Xi Luo, Jian Liu, Ya-hong Xie, and Eli Yablonovitch. "Junction field-effect-transistor-based germanium photodetector on silicon-on-insulator." Optics Letters 33, no. 10 (May 14, 2008): 1138. http://dx.doi.org/10.1364/ol.33.001138.

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25

Guo, Pengfei, Yue Yang, Yuanbing Cheng, Genquan Han, Jisheng Pan, Ivana, Zheng Zhang, et al. "Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction." Journal of Applied Physics 113, no. 9 (March 7, 2013): 094502. http://dx.doi.org/10.1063/1.4794010.

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26

Albrecht, H., and Ch Lauterbach. "Normally-off InGaAs junction field-effect transistor with InGaAs buffer layer." IEEE Electron Device Letters 8, no. 8 (August 1987): 353–54. http://dx.doi.org/10.1109/edl.1987.26657.

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27

Cheng, J., G. Guth, M. Washington, S. R. Forrest, and R. Wunder. "Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifier." IEEE Electron Device Letters 7, no. 4 (April 1986): 225–28. http://dx.doi.org/10.1109/edl.1986.26353.

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28

Caputo, D., G. de Cesare, V. Kellezi, and F. Palma. "Amorphous silicon junction field-effect transistor for digital and analog applications." Applied Physics Letters 77, no. 9 (August 28, 2000): 1390–92. http://dx.doi.org/10.1063/1.1289912.

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29

Damle, Samir, Yu-Hsin Liu, Shaurya Arya, Nicholas W. Oesch, and Yu-Hwa Lo. "Vertically integrated photo junction-field-effect transistor pixels for retinal prosthesis." Biomedical Optics Express 11, no. 1 (December 4, 2019): 55. http://dx.doi.org/10.1364/boe.11.000055.

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30

Aw, K. C., N. Tjitra Salim, Hui Peng, Lijuan Zhang, J. Travas-Sejdic, and W. Gao. "PN-junction diode behavior based on polyaniline nanotubes field effect transistor." Journal of Materials Science: Materials in Electronics 19, no. 10 (October 30, 2007): 996–99. http://dx.doi.org/10.1007/s10854-007-9438-7.

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31

Bodart, J. R., B. M. Garcia, L. Phelps, N. S. Sullivan, W. G. Moulton, and P. Kuhns. "The effect of high magnetic fields on junction field effect transistor device performance." Review of Scientific Instruments 69, no. 1 (January 1998): 319–20. http://dx.doi.org/10.1063/1.1148517.

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32

Lee, S. C., J. M. Baek, H. B. Jeon, K. H. Kang, J. Y. Kim, H. Y. Lee, M. W. Lee, and H. Park. "Performance test for a pixelated silicon sensor with junction field effect transistor." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 978 (October 2020): 164419. http://dx.doi.org/10.1016/j.nima.2020.164419.

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33

Salah, Tarek Ben, Sameh Mtimet, and Hervé Morel. "SiC-Junction Field Effect Transistor Temperature Sensor: Theoretical Analysis and Experimental Validation." Sensor Letters 9, no. 6 (December 1, 2011): 2347–50. http://dx.doi.org/10.1166/sl.2011.1762.

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34

Kazazis, D., P. Jannaty, A. Zaslavsky, C. Le Royer, C. Tabone, L. Clavelier, and S. Cristoloveanu. "Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator." Applied Physics Letters 94, no. 26 (June 29, 2009): 263508. http://dx.doi.org/10.1063/1.3168646.

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35

Zhang, Yimeng, Meiyan Tang, Qingwen Song, Xiaoyan Tang, Hongliang Lv, and Sicheng Liu. "High temperature characterization of normally-on 4H-SiC junction field-effect transistor." Superlattices and Microstructures 99 (November 2016): 113–17. http://dx.doi.org/10.1016/j.spmi.2016.04.001.

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36

Wong, W. W., J. J. Liou, and J. Prentice. "An improved junction field-effect transistor static model for integrated circuit simulation." IEEE Transactions on Electron Devices 37, no. 7 (July 1990): 1773–75. http://dx.doi.org/10.1109/16.55768.

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37

Comizzoli, Robert B. "Failure Analysis of Junction Field Effect Transistor Integrated Circuits by Corona Charging." Journal of The Electrochemical Society 138, no. 4 (April 1, 1991): 1098–100. http://dx.doi.org/10.1149/1.2085722.

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38

Raulin, J. Y., E. Thorngren, M. A. di Forte‐Poisson, M. Razeghi, and G. Colomer. "Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate." Applied Physics Letters 50, no. 9 (March 2, 1987): 535–36. http://dx.doi.org/10.1063/1.98151.

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39

Vostokov, N. V., V. M. Daniltsev, S. A. Kraev, V. L. Krukov, E. V. Skorokhodov, S. S. Strelchenko, and V. I. Shashkin. "Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction." Semiconductors 53, no. 10 (October 2019): 1279–81. http://dx.doi.org/10.1134/s1063782619100245.

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40

Ivanov, Z. G., E. A. Stepantsov, A. Ya Tzalenchuk, R. I. Shekhter, and T. Claeson. "Field effect transistor based on a bi-crystal grain boundary Josephson junction." IEEE Transactions on Applied Superconductivity 3, no. 1 (March 1993): 2925–28. http://dx.doi.org/10.1109/77.234013.

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41

Yen, J. C., Q. Zhang, M. J. Mondry, P. M. Chavarkar, E. L. Hu, S. I. Long, and U. K. Mishra. "Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits." Solid-State Electronics 39, no. 10 (October 1996): 1449–55. http://dx.doi.org/10.1016/0038-1101(96)00065-2.

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42

Farhangfar, Amin. "Highly Sensitive Determination of Hydrazine Using Copper Hexacyanoferrate Nanoparticles Modified on Commercial Junction Field-Effect Transistor as Ion Sensitive Field-Effect Transistor." IEEE Sensors Journal 18, no. 3 (February 1, 2018): 925–32. http://dx.doi.org/10.1109/jsen.2017.2778228.

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43

Bargieł, Kamil, Damian Bisewski, and Janusz Zarębski. "Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)." Energies 13, no. 1 (January 1, 2020): 187. http://dx.doi.org/10.3390/en13010187.

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The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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44

Zhang, Pengfei, Dong Li, Mingyuan Chen, Qijun Zong, Jun Shen, Dongyun Wan, Jingtao Zhu, and Zengxing Zhang. "Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory." Nanoscale 10, no. 7 (2018): 3148–52. http://dx.doi.org/10.1039/c7nr08515j.

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By designing and tailoring the structure of the floating gate, a special floating-gate field-effect transistor configuration has been proposed for the design of programmable non-volatile black phosphorus PNP junction memory.

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45

Zhu, Lin, and T. Paul Chow. "Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor." Materials Science Forum 389-393 (April 2002): 1231–34. http://dx.doi.org/10.4028/www.scientific.net/msf.389-393.1231.

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46

Ali, Asif, Dongsun Seo, and Il Hwan Cho. "Investigation of Junction-less Tunneling Field Effect Transistor (JL-TFET) with Floating Gate." JSTS:Journal of Semiconductor Technology and Science 17, no. 1 (February 28, 2017): 156–61. http://dx.doi.org/10.5573/jsts.2017.17.1.156.

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47

Abouchabaka, J., R. Aboulaı̈ch, and A. Souissi. "Numerical approach of a free boundary in the junction field effect transistor – MESFET." Mathematics and Computers in Simulation 47, no. 6 (September 1998): 531–39. http://dx.doi.org/10.1016/s0378-4754(98)00133-5.

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48

Xiao-Yu, Hou, Huang Ru, Chen Gang, Liu Sheng, Zhang Xing, Yu Bin, and Wang Yang-Yuan. "A novel 10-nm physical gate length double-gate junction field effect transistor." Chinese Physics B 17, no. 2 (February 2008): 685–89. http://dx.doi.org/10.1088/1674-1056/17/2/054.

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49

Li, Chang, Cheng Chen, Jie Chen, Tao He, Hongwei Li, Zeyuan Yang, Liu Xie, Zhongchang Wang, and Kai Zhang. "High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure." Journal of Semiconductors 41, no. 8 (August 2020): 082002. http://dx.doi.org/10.1088/1674-4926/41/8/082002.

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50

Liu, X. H., Y. Lu, C. H. Ge, J. W. Wang, Y. J. Lin, and Y. Li. "Simulation of Carbon Nanotube Field Effect Transistor with Linear Graded PN Junction Channel." Advanced Science Letters 19, no. 4 (April 1, 2013): 1061–66. http://dx.doi.org/10.1166/asl.2013.4419.

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