Journal articles: 'ITO Films'

1

Zhidik, Yu S., P. E. Troyan, V. V. Kozik, S. A. Kozyukhin, A. V. Zabolotskay, and S. A. Kuznetsova. "Electrophysical studies of ITO films." Izvestiya vysshikh uchebnykh zavedenii. Fizika, no. 7 (2020): 31–35. http://dx.doi.org/10.17223/00213411/63/7/31.

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2

Gareso, Paulus Lobo, Heryanto Heryanto, Eko Juarlin, and Paulina Taba. "Effect of Annealing on the Structural and Optical Properties of ZnO/ITO and AZO/ITO Thin Films Prepared by Sol-Gel Spin Coating." Trends in Sciences 20, no. 3 (December 27, 2022): 6521. http://dx.doi.org/10.48048/tis.2023.6521.

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This paper aims to investigate the effect of annealing on the structural and optical properties of ZnO/ITO and AZO/ITO thin films. In the preparation of ZnO and AZO films, zinc acetate dehydrate (Zn(CH3COO)2.2H2O), ethanol, diethanolamine (DEA), and AlCl3 were used as a starting material, solvent, stabilizer, and dopant sources, respectively. Both ZnO and AZO films were fabricated on ITO (indium tin oxide) substrates using the spin coating technique at room temperature with a rotating speed of 3,000 rpm in 30 s. The films were heated at various temperatures in the temperature range of 400 - 600 °C for 60 min. The crystallite size of the film is calculated using Debye-Scherrer and Williamson-Hall Methods. Based on the UDM results, the crystallite size of ZnO/ITO and AZO/ITO films increases after annealing in comparison with the films before annealing. From the optical UV-Vis measurements, there was an increase in the transmittance value of the samples after annealing. The transmittance value of ZnO/ITO and AZO/ITO films increases from 40 % before annealing to approximately 80 and 90 %, respectively after annealing. The increase in the transmittance valued in both ZnO/ITO and AZO/ITO after annealing is mainly due to an improvement in the crystalline phase of these films. The band gap energy of ZnO and AZO films is reduced with increasing annealing temperatures, from 3.26 eV before annealing to 3.19 eV for ZnO and 3.23 eV for AZO films after annealing at 600 °C. HIGHLIGHTS The sol-gel spin coating method was used to study the effect of annealing on the structural and optical properties of ZnO/ITO and AZO/ITO films The transmittance valued in both ZnO/ITO and AZO/ITO after annealing increase as a result of an improvement in the crystalline phase of these films Reducing the amorphous phase and the increase of the crystallite size of the films are the main reason for narrowing the band gap energy of the ZnO/ITO and AZO/ITO films

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Lei, Pei, Xiaoting Chen, Yue Yan, Xuan Zhang, Changshan Hao, Jingjing Peng, Jianchao Ji, and Yanli Zhong. "Sputtered ITO/Ag/ITO Films: Growth Windows and Ag/ITO Interfacial Properties." Journal of Electronic Materials 51, no. 5 (March 8, 2022): 2645–51. http://dx.doi.org/10.1007/s11664-022-09519-5.

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4

Caricato, A. P., M. Cesaria, A. Luches, M. Martino, G. Maruccio, D. Valerini, M. Catalano, et al. "Electrical and optical properties of ITO and ITO/Cr-doped ITO films." Applied Physics A 101, no. 4 (August 31, 2010): 753–58. http://dx.doi.org/10.1007/s00339-010-5988-2.

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Isiyaku, Aliyu Kabiru, Ahmad Hadi Ali, and Nafarizal Nayan. "Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact." Beilstein Journal of Nanotechnology 11 (April 27, 2020): 695–702. http://dx.doi.org/10.3762/bjnano.11.57.

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Indium tin oxide (ITO) is a widely used material for transparent conductive oxide (TCO) films due to its good optical and electrical properties. Improving the optoelectronic properties of ITO films with reduced thickness is crucial and quite challenging. ITO-based multilayer films with an aluminium–silver (Al–Ag) interlayer (ITO/Al–Ag/ITO) and a pure ITO layer (as reference) were prepared by RF and DC sputtering. The microstructural, optical and electrical properties of the ITO/Al–Ag/ITO (IAAI) films were investigated before and after annealing at 400 °C. X-ray diffraction measurements show that the insertion of the Al–Ag intermediate bilayer led to the crystallization of an Ag interlayer even at the as-deposited stage. Peaks attributed to ITO(222), Ag(111) and Al(200) were observed after annealing, indicating an enhancement in crystallinity of the multilayer films. The annealed IAAI film exhibited a remarkable improvement in optical transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq. The carrier concentration increased more than twice when the Al–Ag layer was inserted between the ITO layers. The figure of merit of the IAAI multilayer contact has been found to be high at 76.4 × 10−3 Ω−1 compared to a pure ITO contact (69.4 × 10−3 Ω−1). These highly conductive and transparent ITO films with Al–Ag interlayer can be a promising contact for low-resistance optoelectronics devices.

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Aiempanakit, K., Supattanapong Dumrongrattana, and P. Rakkwamsuk. "Influence of Structural and Electrical Properties of ITO Films on Electrochromic Properties of WO₃ Films." Advanced Materials Research 55-57 (August 2008): 921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.921.

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Indium tin oxide (ITO) films had been deposited on glass substrate without substrate heating and then tungsten oxide (WO3) films were deposited on ITO films by DC magnetron sputtering. In this work, we present the annealing ambient effect of ITO substrate on electrochromic properties of WO3 films. The ITO films were annealing in air and in vacuum at 350°C before coating with WO3 films. The structural, optical, and electrical properties of ITO films for as-deposited, annealing in air and in vacuum were investigated by X-ray diffraction, UV-VIS-NIR spectroscope and four point probe. The ITO films had a better crystallinity and lager grain size after annealing in air and in vacuum. The resistivity of ITO films increase with annealing in air, but decrease with annealing in vacuum. The WO3 films show difference surface morphology with higher grain size and surface roughness when coating on annealed ITO films in both cases. The electrochemical properties of film systems were characterized by cyclic voltammetry. The film systems of ITO plus WO3 showed that the charge capacity of ITO substrate annealing in vacuum was higher than the as-deposited ITO substrate and the ITO substrate annealing in air, respectively. This result corresponded to electrical conductivity of each ITO substrate.

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7

Takahashi, Yasutaka, Shinya Okada, Radhouane Bel Hadj Tahar, Ken Nakano, Takayuki Ban, and Yutaka Ohya. "Dip-coating of ITO films." Journal of Non-Crystalline Solids 218 (September 1997): 129–34. http://dx.doi.org/10.1016/s0022-3093(97)00199-3.

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8

Wu, Yung-Fu, and Yi-Lang Ru. "Electrochemical polishing of ITO films." Microelectronic Engineering 87, no. 12 (December 2010): 2549–54. http://dx.doi.org/10.1016/j.mee.2010.07.010.

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9

Lu, Yun Hua, Zhi Zhi Hu, Ji Ming Bian, and Yong Fei Wang. "Transparent Polyimides and their ITO Flexible Conductive Film." Advanced Materials Research 239-242 (May 2011): 1211–14. http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.1211.

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The preparation and properties of indium tin oxide (ITO) coated transparent polyimide substrates were reported in the paper. The transparent polyimide films were prepared through thermal imidization of poly(amic acid) films. Transparent conducting ITO films were prepared on polyimide substrates by magnetron-sputtering technique at room temperature. The optical and electrical properties of the obtained films have been investigated. Polycrystalline ITO films were deposited with resistivity as low as 10-4Ω.cm on polyimide substrates. The average transmittance exceeded 78% in the visible spectrum for 200nm thick films deposited on polyimide.

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10

Wang, Xianqi, Hongda Zhao, Bo Yang, Song Li, Zongbin Li, Haile Yan, Yudong Zhang, Claude Esling, Xiang Zhao, and Liang Zuo. "Influence of the Sputtering Temperature on Reflectivity and Electrical Properties of ITO/AgIn/ITO Composite Films for High-Reflectivity Anodes." Materials 16, no. 7 (April 3, 2023): 2849. http://dx.doi.org/10.3390/ma16072849.

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In this paper, indium tin oxide/silver indium/indium tin oxide (ITO/AgIn/ITO) composite films were deposited on glass substrates by magnetron sputtering. The effects of the sputtering temperature on the optical and electrical properties of the composite films were systematically investigated. The ITO/AgIn/ITO composite films deposited at sputtering temperatures of 25 °C and 100 °C demonstrated a high reflectivity of 95.3% at 550 nm and a resistivity of about 6.8–7.3 μΩ·cm. As the sputtering temperature increased, the reflectivity decreased and the resistivity increased slightly. The close connection between microstructure and surface morphology and the optical and electrical properties of the composite films was further illustrated by scanning electron microscopy imaging and atomic force microscopy imaging. It is shown that the ITO/AgIn/ITO thin films have a promising application for high-reflectivity anodes.

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11

Lu, Xiao Juan, and Duo Wang Fan. "Study of ITO Thin Film Deposited by RF Magnetron Sputter at Low Temperature." Advanced Materials Research 160-162 (November 2010): 1193–98. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.1193.

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ITO thin films used in PTCDA/Si detector should be made at low temperature for low temperature resistance of substrate. ITO thin films were deposited at low temperature by RF magnetron sputtering. Properties of ITO thin films such as conductivity and transmission measured by 4 point probe and UV spectral photometry respectively. The results show that the sputtering pressure is an important parameter in the deposition of indium tin oxide（ITO） thin films, which affects the properties of ITO films. The optimized parameter for preparation of ITO thin films at low temperature are sputtering pressure 0.45 Pa, sputtering power 45W. Meanwhile, the post-annealing is not necessary.

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12

Ma, Wei Hong, and Chang Long Cai. "Studying on Thickness Control of ITO Films Deposited Using RF Magnetron Sputtering." Advanced Materials Research 415-417 (December 2011): 1921–24. http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1921.

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Indium tin oxide (ITO) films are widely applied as the transparent electrode in the photoelectric device because of its high conductivity and high transmittance in the visible wavelength. But the resistivity and position of transmittance peak of ITO films were influenced by the thickness of ITO films, so it is important significant to study the deposition rate of ITO films deposited using RF magnetron sputtering. In this paper, ITO films were prepared by RF magnetron sputtering method on K9 glass substrate, the influence of RF power, sputtering pressure, oxygen ratio, and substrate temperature on the deposition rate of ITO films was mainly studied, meanwhile, the influence of annealing temperature on the film thickness and the process stability depositing ITO using RF magnetron sputtering was studied, and the influence mechanism of technique parameters was analyzed.

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13

Lee, Yih-Shing, Li-Yang Chuang, Cheng-Jia Tang, Zi-Zhu Yan, Bing-Shin Le, and Cheng-Chung Jaing. "Investigation into the Characteristics of Double-Layer Transparent Conductive Oxide ITO/TNO Anti-Reflection Coating for Silicon Solar Cells." Crystals 13, no. 1 (January 1, 2023): 80. http://dx.doi.org/10.3390/cryst13010080.

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In this study, indium–tin oxide (ITO)/Nb-doping TiO2 (TNO) double-layer transparent conductive oxide (TCO) films deposited using DC magnetron sputtering were used as a surface anti-reflection layer with an overall thickness of 100 nm for double-layer films. The simulated results showed that ITO and TNO thickness combinations of 90 nm/10 nm, 80 nm/20 nm, and 70 nm/30 nm had a higher transmittance and lower reflectance than others in the visible wavelength range. Compared to the single-layer ITO films, for ITO/TNO films deposited on the glass and silicon substrates with an optimum thickness of 80/20 nm, the reflectance was reduced by 5.06% and 4.63%, respectively, at the central wavelength of 550 nm and crystalline silicon photo response wavelength of 900 nm. Moreover, the near-infrared reflectance of the double-layer ITO/TNO with thickness combinations of 90 nm/10 nm, 80 nm/20 nm, and 70 nm/30 nm, when deposited on silicon substrates, was obviously improved by the graded refractive index lamination effect of air (1)/ITO (1.98)/TNO (2.41)/Si (3.9).

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14

Yang, Shumin, Wei Zhang, Bin Xie, and Mingyao Xiong. "Influence of ITO Target on Structural, Optical, and Electrical Properties of Thin Films Deposited by Magnetron Sputtering." Journal of Physics: Conference Series 2468, no. 1 (April 1, 2023): 012005. http://dx.doi.org/10.1088/1742-6596/2468/1/012005.

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Abstract Indium tin oxide (ITO) targets possess good performances, thereby used to produce high-quality ITO films in transparent electrodes of various optoelectronic devices. The performance of the target greatly affects the performances of prepared ITO films. However, effect of the overall performance of ITO targets on ITO films performance is still not fully understood. ITO films were prepared with four targets by magnetron sputtering in the similar condition in this study. Effects of crystal structure, resistivity, and oxygen content of the targets on photoelectric performances of ITO films were all evaluated. Results showed the important effect of target properties on obtained film characteristics. ITO films prepared by low resistivity targets are more evenly distributed on the substrate surface. Meanwhile, oxygen content of obtained ITO films decreased as oxygen content of ITO targets used in sputtering process increased. This also significantly improved the photoelectric performances. ITO thin films deposited using targets with low resistivity and low oxygen content exhibited excellent photoelectric performances. In this experiment, the prepared ITO film illustrated the lowest resistivity of 1.75×10−4 Ω·cm and average transmittance of 90.5%. In sum, these findings provided a certain experimental basis for further improving the performances of ITO films.

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15

Choi, Yong-Lak, and Seon-Hwa Kim. "Microstructure and Properties of ITO and ITO/Ag/ITO Multilayer Thin Films Prepared by D.C. Magnetron Sputtering." Korean Journal of Materials Research 16, no. 8 (August 27, 2006): 490–96. http://dx.doi.org/10.3740/mrsk.2006.16.8.490.

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16

Park, Joon Hong, Sang Chul Lee, and Pung Keun Song. "Properties of ITO films deposited with different conductivity ITO targets." Metals and Materials International 13, no. 6 (December 2007): 475–78. http://dx.doi.org/10.1007/bf03027905.

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17

Thonglem, Sutatip, Uraiwan Intatha, Kamonpan Pengpat, Gobwute Rujijanagul, Tawee Tunkasiri, and Sukum Eitssayeam. "Electrical and Optical Properties of ITO/Au/ITO Multilayer Films for High Performance TCO Films." Ferroelectrics 457, no. 1 (January 2013): 117–23. http://dx.doi.org/10.1080/00150193.2013.848766.

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18

YASUI, Hideaki, and Yoshiyuki TSUDA. "ITO thin films prepared by magnetron sputtering method using ITO target. Result of preparation of ITO films by moving deposition." SHINKU 33, no. 3 (1990): 117–20. http://dx.doi.org/10.3131/jvsj.33.117.

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19

Balasundraprabhu, Rangasamy, E. V. Monakhov, N. Muthukumarasamy, and B. G. Svensson. "Studies on Nanostructure ITO Thin Films on Silicon Solar Cells." Advanced Materials Research 678 (March 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/amr.678.365.

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Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

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20

Hoa, Nguyen Quang. "STUDY ON ITO THIN FILMS PREPARED BY MULTI-ANNEALING TECHNIQUE." Vietnam Journal of Science and Technology 54, no. 1A (March 16, 2018): 136. http://dx.doi.org/10.15625/2525-2518/54/1a/11818.

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Indium tin oxide (ITO) thin films have been successfully prepared by a solution process followed by a multi-annealing method. In this study, we focus on the use of multi-annealing method, for which each layer was annealed at a suitable temperature, instead of a conventional annealing way, by means of a rapid thermal annealing system, in order to improve the film quality. The crystalline structure and surface morphology of the ITO thin films were investigated by using X-ray diffraction (XRD) spectrometer, atomic force microscope (AFM) and scanning electron microscope (SEM). It has been obtained that all of ITO films exhibit a single phase with (222)- and (440)-preferred orientations. The AFM and SEM observations show that the particle size of ITO films was about 10 nm and the ITO film thickness was 180 nm, respectively. In sequence, the electrical properties of ITO thin films were evaluated by using four-point probe and Hall effect measurement methods, and the optical properties were investigated by UV/VIS spectrometer. The results show that the best ITO films have electrical resistivity of 2.6 × 10-3 Ω.cm and transparency higher than 90 %, which strongly supports to the application of electrode in solar cell, LED or transistor devices from viewpoints of low-cost production and low-energy consumption.

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21

Sauli, Zaliman, Vithyacharan Retnasamy, Chai Jee Keng, Moganraj Palianysamy, and Hussin Kamarudin. "Reflectance Analysis of Sputtered Indium Tin Oxide(ITO) Using UV Lambda." Applied Mechanics and Materials 680 (October 2014): 102–5. http://dx.doi.org/10.4028/www.scientific.net/amm.680.102.

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Preliminary analysis has been done on the reflectance of sputtered Indium Tin Oxide (ITO) layers. The analysis is done for two different types of layers which is the directly sputtered ITO films and the treated ITO films. In both type of the film it is divided into the thickness of the layer and deposition time. Analysis is done using Perkin Elmer Lambda 950 UV/Vis/NIR Spectrophotometer. The working spectral range is from 250 nm to 800 nm (for transmittance), covering the ultra-violet (UV) and visible spectrum. Results shows thatthe directly deposited thin ITO films had lower reflectance compared to the thick films. The reflectance of the thick films with three and four layers was high (95%) compared to the rest of the films. The treated films produce very low reflectance.

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22

Balasundraprabhu, Rangasamy, N. Muthukumarasamy, E. V. Monakhov, and B. G. Svensson. "Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films." Advanced Materials Research 678 (March 2013): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amr.678.140.

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Indium tin oxide (ITO) thin films exhibiting good transmittance and conductivity suitable for solar cell applications have been prepared on Si(100) and fused silica substrates by optimizing the dc sputtering parameters such as power density and Ar partial pressure. Structural analysis of the as-deposited and annealed ITO films indicated that the as-deposited films are predominantly amorphous, whereas the films annealed at 200–400 °C are found to be of polycrystalline nature exhibiting dominant peaks corresponding to the (222) and (400) planes. The optical transmittance and band gap values of the films are observed to exhibit a change on annealing. From the ellipsometry studies on ITO/Si annealed at 300°C, it is found that graded layer consist of the mixing of two ITO materials with slightly different optical constants and the grading is almost linear. The resistivity of the ITO films is found to decrease with annealing temperature, correlating with the improvement in the crystal quality, and values in the range of 2-3 x10-4 Ω-cm are observed for the films annealed at 300°C. Surface topography study of the films has been performed using atomic force microscope(AFM) and the results are discussed.

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23

Kim, Do Hyoung, Han Ki Yoon, Do Hoon Shin, and Riichi Murakami. "Electromagnetic Wave Shielding Properties of ITO/PET Thin Film by Film Thickness." Key Engineering Materials 345-346 (August 2007): 1585–88. http://dx.doi.org/10.4028/www.scientific.net/kem.345-346.1585.

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The thin films of indium tin oxide (ITO) are used for a variety of electronic devices such as solar cells, touch panels, liquid crystal displays (LCDs). However, these electronic devices are not strong enough against heavy impact since their ITO thin films are deposited on glass substrates. Therefore, ITO thin films were prepared by the inclination opposite target type DC magnetron sputtering equipment onto the Polyethylene Terephthalate (PET) substrate at room temperature using oxidized ITO with In2O3 and SnO2 in a weight ratio of 9:1. In this study, the transmittance, resistivity and electromagnetic wave shielding effectiveness of the ITO thin films prepared at various sputtering time (20~80min namely film thickness; 130~500nm) are measured. The results show that transmittance of the ITO thin films could show about 70% in the range of a visible ray by the variation of film thickness. It also can be seen that a minimum exists in the resistivity of ITO thin films for the variation of film thickness. Electromagnetic wave shielding effectiveness was increased as film thickness increased.

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24

Sauli, Zaliman, Vithyacharan Retnasamy, Chai Jee Keng, Moganraj Palianysamy, and Hussin Kamarudin. "Preliminary Study on Resistance of Non-Treated and Treated ITO Films." Applied Mechanics and Materials 680 (October 2014): 111–14. http://dx.doi.org/10.4028/www.scientific.net/amm.680.111.

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A study on the resistance of directly sputtered films and treated films of Indium Tin Oxide (ITO) is done to initiate an extensive study on the material. This study involves variation in terms of number of layers and duration of deposition. Treated films are produced by undergoing annealing process which is carried out using Split Type Tube Furnace. Resistance measurements were carried out using Semiconductor Parametric Analyzer (SPA). Results show that the directly sputtered ITO films produced lower resistance compared to the treated ITO films.

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25

Lee, Chongmu, R. P. Dwivedi, Wangwoo Lee, Chanseok Hong, Wan In Lee, and Hyoun Woo Kim. "IZO/Al/GZO multilayer films to replace ITO films." Journal of Materials Science: Materials in Electronics 19, no. 10 (October 18, 2007): 981–85. http://dx.doi.org/10.1007/s10854-007-9430-2.

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TSUDA, Yoshiyuki, Hideaki YASUI, Hidenobu SINTAKU, Hiroyoshi TANAKA, and Masahide YOKOYAMA. "ITO thin films prepared by DC magnetron sputtering method using ITO target. Preparation of ITO films on low temperature glass substrate." SHINKU 32, no. 3 (1989): 336–40. http://dx.doi.org/10.3131/jvsj.32.336.

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27

Joo, Shin Yong, Chadrasekhar Loka, Young Woong Jo, Maddipatla Reddyprakash, Sung Whan Moon, YiSik Choi, Seong Eui Lee, Gue Serb Cho, and Kee-Sun Lee. "ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels." Coatings 10, no. 2 (February 3, 2020): 134. http://dx.doi.org/10.3390/coatings10020134.

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The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

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Popovich, N. D., S. S. Wong, S. Ufer, V. Sakhrani, and D. Paine. "Electron-Transfer Kinetics at ITO Films." Journal of The Electrochemical Society 150, no. 11 (2003): H255. http://dx.doi.org/10.1149/1.1613672.

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29

Yumoto, H., T. Inoue, S. J. Li, T. Sako, and K. Nishiyama. "Application of ITO films to photocatalysis." Thin Solid Films 345, no. 1 (May 1999): 38–41. http://dx.doi.org/10.1016/s0040-6090(99)00094-2.

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Pohl, Annika, and Bruce Dunn. "Mesoporous indium tin oxide (ITO) films." Thin Solid Films 515, no. 2 (October 2006): 790–92. http://dx.doi.org/10.1016/j.tsf.2005.12.195.

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31

Inoue, Mayumi, Tomizo Matsuoka, Yosuke Fujita, and Atsushi Abe. "Patterning Characteristics of ITO Thin Films." Japanese Journal of Applied Physics 28, Part 1, No. 2 (February 20, 1989): 274–78. http://dx.doi.org/10.1143/jjap.28.274.

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32

Song, Shumei, Tianlin Yang, Jingjing Liu, Yanqing Xin, Yanhui Li, and Shenghao Han. "Rapid thermal annealing of ITO films." Applied Surface Science 257, no. 16 (June 2011): 7061–64. http://dx.doi.org/10.1016/j.apsusc.2011.03.009.

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33

Han, Hyun-Woong, Young Hoon Yun, and Sung Churl Choi. "Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process." Materials Science Forum 492-493 (August 2005): 325–30. http://dx.doi.org/10.4028/www.scientific.net/msf.492-493.325.

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Indium tin oxide (ITO) thin films were deposited on glass substrates via sol-gel spin coating process from a mixed solution of Indium (Ⅲ) acetylacetonate and Tin (Ⅳ) iso-propoxide. Then, ITO thin films were fired at 500°C, and then annealed at 500°C for 30 min with the sequential annealing process; VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 gas. The effects of the different annealing processes on the surface morphologies and sheet resistance of ITO thin films were investigated. Sheet resistance values of ITO thin films treated under VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 annealing process were 1.25 kohm/sq., 3.18 kohm/sq. and 4.92 kohm/sq., respectively. Actually, the sequential atmosphere gases and non-oxidizing gas, which were used in annealing process influenced the microstructural features or surface morphologies of ITO thin films: grain size and surface roughness. Thus, it was presumed that the sequential annealing condition influenced the densification behavior in the microstructural evolution of ITO thin films.

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34

Zhou, Yang, Guang Ming Wu, De Wen Gao, Guang Jian Xing, Yan Ying Zhu, Zhi Qian Zhang, and Yang Cao. "Preparation and Physical Properties of ITO Thin Films by Spray Pyrolysis Method." Advanced Materials Research 465 (February 2012): 268–75. http://dx.doi.org/10.4028/www.scientific.net/amr.465.268.

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Indium tin oxide (ITO) films were deposited on glass substrates by using the homemade spray pyrolysis system. Orthogonal test was designed to examine the optimal conditions for preparation of the ITO films. The results showed that the ITO thin films can be prepared by the homemade spray pyrolysis device successfully. The device is simple in structure and easy to use. The substrate temperature is the main factor on the photoelectric properties of the ITO films. The optimal conditions for preparing the ITO thin films were as following: the substrate temperature is 300oC, the carrier gas flow of the air was 1.5 L•min-1, the annealing temperature was 500oC, the proportion of the indium and tin was 10:1, the distance between substrate and nozzle was 8 cm, and the deposition time was 3.5 min. The average optical transmittance in the visible range and sheet resistance of the ITO film were 93% and 2786Ω/□, respectively.

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Kim, Y. S., J. H. Park, D. H. Choi, H. S. Jang, J. H. Lee, H. J. Park, J. I. Choi, D. H. Ju, J. Y. Lee, and Daeil Kim. "ITO/Au/ITO multilayer thin films for transparent conducting electrode applications." Applied Surface Science 254, no. 5 (December 2007): 1524–27. http://dx.doi.org/10.1016/j.apsusc.2007.07.080.

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36

Mohd Asri, Rahil Izzati, Nur Atiqah Hamzah, Mohd Anas Ahmad, Mohd Ann Amirul Zulffiqal Md. Sahar, Muhd Azi Che Seliman, Mundzir Abdullah, and Zainuriah Hassan. "Rapid Thermal Annealing Process Toward Enhancement of ITO Thin Films." Key Engineering Materials 946 (May 25, 2023): 55–60. http://dx.doi.org/10.4028/p-auu3nm.

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Indium tin oxide (ITO) thin films with 100 nm thickness were successfully deposited on soda-lime glass substrates by metal oxide electron beam evaporation at room temperature. The deposited films were post annealed via rapid thermal processor (RTP) in vacuum environment at 400 to 550 °C. All deposited ITO thin films were studied on the structural, electrical, and optical properties. Results showed that the post annealing treatment by RTP improved the crystallinity, increased crystallite size, and increased surface roughness values. Higher RTP post annealing temperature also enhanced the electrical performance that led to higher transmittance of ITO thin films.

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37

Tran, Vinh Cao, Hanh Thi Kieu Ta, Dung Thi My Cao, Giang Thuy Thanh Le, and Phong Duy Pham. "OPTICAL AND ELECTRICAL PROPERTIES OF HIGHLY [222] TEXTURED ITO ON GLASS." Science and Technology Development Journal 12, no. 12 (June 28, 2009): 5–13. http://dx.doi.org/10.32508/stdj.v12i12.2313.

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Thin ITO films on glass having single crystalline direction [222] were deposited by magnetron dc sputtering. The high-texture ITO films [222] were obtained by using thin ITO buffers that were sputtered in oxygen-rich O+Ar mixture at early stage. X-ray patterns showed that ITO films had single direction [222] with film thickness up to 750nm. The resistivity, electron density and mobolity of ITO/buffer/glass films were 1.2 x 10-4 Ω.cm, 1021 cm-3 and 50 cm2 V-1s-1, respectively. The average transmittance in visible region (400 700nm) was 80%. The optical properties of the films were determined by using (extended Drude + Lorentz) dielectric function as a base to model the measured transmission spectra. The calculated refraction index at 0.55 um was 1.8 and band gap was 4.3 eV. Furthermore, the value of the electron effective mass in conduction band was also deduced and had value in the range of 0.33me - 0.35me.

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38

Wei, Q., S. Y. He, J. C. Liu, and D. Z. Yang. "Optical and Electrical Properties of Transparent Conductive ITO Thin Films under Proton Radiation with 100 keV." Materials Science Forum 475-479 (January 2005): 3697–700. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3697.

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Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2×1016 cm-2, the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment.

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Марков, Л. К., А. С. Павлюченко, and И. П. Смирнова. "Наноструктурированные покрытия ITO/SiO-=SUB=-2-=/SUB=-." Физика и техника полупроводников 53, no. 8 (2019): 1052. http://dx.doi.org/10.21883/ftp.2019.08.47994.9135.

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AbstractThe influence of a SiO_2 layer deposited onto nanostructured transparent conductive films of indium and tin oxide (ITO) on their optical characteristics is investigated. For this purpose, SiO_2 films of various thicknesses are deposited by magnetron sputtering on samples with ITO films containing whiskers of preferentially vertical orientation and possessing steadily decreasing reflectance. It is shown that this makes it possible to attain noticeable coating antireflection under the condition of the uniform overgrowth of ITO whiskers by the SiO_2 layer. The influence of the SiO_2 layer on the optical characteristics of a dense unstructured ITO film is also investigated. The results for structured and unstructured ITO/SiO_2 coatings with identical material mass contents are compared. It is noted that due to the liability of ITO material to degradation during operation in the composition of transparent conductive contacts, the results can also be interesting for the formation of coatings more resistant to the effect of the environment.

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40

Kim, Sung-Hun, and Won-Ju Cho. "Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1875–82. http://dx.doi.org/10.1166/jnn.2021.18902.

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Herein, indium–tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol–gel ITO films are compared with those of as-spun ITO films and sol–gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol–gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.

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41

Sin, Yong-Uk, and Sang-U. Kim. "Electrical Properties of Porous SiO2/ITO Nano Films." Korean Journal of Materials Research 12, no. 1 (January 1, 2002): 94–99. http://dx.doi.org/10.3740/mrsk.2002.12.1.094.

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42

Nan, Boyang, Ruijin Hong, Chunxian Tao, Qi Wang, Hui Lin, Zhaoxia Han, and Dawei Zhang. "Thickness dependency of nonlinear optical properties in ITO/Sn composite films." Chinese Optics Letters 21, no. 8 (2023): 081902. http://dx.doi.org/10.3788/col202321.081902.

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43

Hammad, Talaat Moussa. "ITO Thin Films on Silicon Buffer by Sol Gel Method." Materials Science Forum 514-516 (May 2006): 1155–60. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.1155.

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Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

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44

Almaev, Аleksei V., Viktor V. Kopyev, Vadim A. Novikov, Andrei V. Chikiryaka, Nikita N. Yakovlev, Abay B. Usseinov, Zhakyp T. Karipbayev, Abdirash T. Akilbekov, Zhanymgul K. Koishybayeva, and Anatoli I. Popov. "ITO Thin Films for Low-Resistance Gas Sensors." Materials 16, no. 1 (December 29, 2022): 342. http://dx.doi.org/10.3390/ma16010342.

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Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin oxide thin films annealed at 500 °C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 °C, 350 °C and 350 °C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed.

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45

Tien, Chuen-Lin, and Tsai-Wei Lin. "Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films." Coatings 11, no. 2 (January 29, 2021): 153. http://dx.doi.org/10.3390/coatings11020153.

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This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

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46

Shin, Do Hoon, Ri Ichi Murakami, Jun Minamiguchi, and Yun Hae Kim. "A Study on the Deposition of ITO Films at Low Temperature by Inclination Opposite Target Type DC Magnetron Sputtering Method." International Journal of Modern Physics B 17, no. 08n09 (April 10, 2003): 1229–34. http://dx.doi.org/10.1142/s021797920301879x.

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In the present study, the ITO films were produced onto plastic film substrate at room temperature by the inclination opposite target type DC magnetron sputtering equipment, in which a metallic indium tin alloy target was used. The effects of oxygen flow rate and bias voltage on the electric resistivity and transparency of the ITO films were discussed. For low electric resifitivity of the ITO films, the electromagnetic shielding effectiveness was studied. The results obtained were as follows: (1) The ITO films produced at room temperature has very smooth surface. (2) The electric resistivity of ITO films deposited at room temperature showed minimum value at the oxygen flow 0.4 sccm. (3) The electric resistivity of ITO films deposited at room temperature depended on the bias voltage and showed the minimum value in the bias voltage of -70V. (4) When the optimum coating conditions were selected, the electric resistivity of 3.l2 × l0-4Ω·cm was obtained. (5) When the bias voltage was -70V, the ITO films deposited at room temperature showed the most electromagnetic shielding effectiveness.

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Zimmer, C. M., C. Asbeck, D. Lützenkirchen-Hecht, P. Glösekötter, and K. T. Kallis. "Backside Illumination of an Electronic Photo Ionization Detector Realized by UV Transparent Thin Films." Journal of Nano Research 25 (October 2013): 55–60. http://dx.doi.org/10.4028/www.scientific.net/jnanor.25.55.

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LaB6/ITO films were prepared by magnetron sputtering technique on borosilicate glass substrates. The transmittance of ITO and LaB6/ITO films was analyzed by using UV/VIS spectrophotometer, whereby the sheet resistance of the ITO films was measured by four point probes. The effect of temperature and post-annealing processes on ITO film properties optimizing UV transparency and sheet resistance were investigated in detail. ITO films with an optimized thickness of 31 nm exhibited a low sheet resistance of 64 Ω/sq and a high ultraviolet transmittance of 81% at a wavelength of 365 nm. The additional LaB6 layer controls the UV transmittance behavior of the bilayer structure of LaB6/ITO by improving the photon absorption with thicker LaB6 films. The work function of LaB6 (32 nm)/ITO films with a value of 4.98 eV was measured by ultraviolet photoelectron spectroscopy (UPS).

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48

Zhang, Bo. "Properties of InSnTaO Films as Transparent Conductive Oxides." Advanced Materials Research 534 (June 2012): 197–200. http://dx.doi.org/10.4028/www.scientific.net/amr.534.197.

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InSnTaO films were deposited on glass substrates by magnetron sputtering with ITO target and tantalum target. X-ray diffractometer (XRD) and atomic force microscopy (AFM) revealed that InSnTaO films had better crystalline structure, larger grain size and lower surface roughness than ITO films. Ta-doping remarkably improved the optical-electrical characteristics. The films showed obvious Burstin-Moss effect with substrate temperature. Moreover, the direct transition model showed wider optical band gap of InSnTaO films than that of ITO films. As a result, InSnTaO films prepared by co-sputtering revealed better comprehensive properties than traditional ITO films.

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Yang, Xian Ming, Lin Liu, and Juan Xiu Lin. "A Study of ITO Thin Films Fabricated by DC Magnetron Sputtering Method." Advanced Materials Research 834-836 (October 2013): 79–89. http://dx.doi.org/10.4028/www.scientific.net/amr.834-836.79.

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With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Based on orthogonal test table L18 (35), the effects of process parameters included water partial pressure, work pressure, substrate temperature, oxygen flow rate and sputtering power, on the optoelectronics properties of ITO thin films were investigated in detail(systematically). Calibration of sheet resistance transmittance, atomic force microscope, and X-ray diffraction were employed to characterize the ITO films.

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50

Zhidik, Yury, Anna Ivanova, Serafim Smirnov, Klavdiya Zhuk, Igor Yunusov, and Pavel Troyan. "Nanoscale ITO Films for Plasmon Resonance-Based Optical Sensors." Coatings 12, no. 12 (December 1, 2022): 1868. http://dx.doi.org/10.3390/coatings12121868.

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The developing field of plasmonics has led to the possibility of creating a new type of high-speed, highly sensitive optical sensors for the analysis of chemical and biological media. The functional conducting layers of surface plasmon resonance (SPR) optical sensors are almost always nanoscale thin films of noble metals. To enhance the plasmon resonance, nanostructured films of transparent conductive oxides are introduced into the optical sensors. However, such modified optical sensors operate in the infrared region of the spectrum. In this work, we demonstrate that the use of indium tin oxide (ITO) films with a high concentration of charge carriers makes it possible to shift the surface plasmon resonance into the visible radiation region. The work presents the results of the development of magnetron deposition technology for ITO thin films, with optimal parameters for optical sensors based on surface plasmon resonance operating in the visible range of the spectrum. Their optical and electrical characteristics are investigated. Excitation of the surface and volume plasmon resonance at the dielectric-ITO film interface, using the Kretschman configuration, is studied. It is shown that SPR is excited in the investigated ITO films with a concentration of free charge carriers of the order of 1021–1022 cm−3, when irradiated with a beam of light with TM polarization in the wavelength range of 350–950 nm. At the same time, the addition of various analytes to the surface of an ITO film changes the excitation wavelength of the SPR.

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Journal articles on the topic 'ITO Films'

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