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1
Reed, Amber Nicole. "Characterization of Inert Gas RF Plasma-Treated Indium Tin Oxide Thin Films Deposited Via Pulsed DC Magnetron Sputtering." Wright State University / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=wright1221763086.
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Giusti, Gaël. "Deposition and characterisation of functional ITO thin films." Thesis, University of Birmingham, 2011. http://etheses.bham.ac.uk//id/eprint/1678/.
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Polycrystalline tin-doped indium oxide (ITO) thin films were prepared by Pulsed Laser Deposition (PLD) with an ITO (In\(_2\)O\(_3\)-10 wt.% SnO\(_2\)) target and deposited on borosilicate glass substrates. By changing independently the thickness, the deposition temperature and the oxygen pressure, a variety of microstructures were deposited. The impact on thin film physical properties of different gas dynamics is stressed and explained. Films deposited at room temperature (RT) show poorer opto-electrical properties. The same is true for films deposited at low or high oxygen pressure. It is shown that films grown with 1 to 10 mT Oxygen pressure at 200 °C show the best compromise in terms of transmittance and resistivity. The influence of the thickness, the substrate temperature and the oxygen pressure on the microstructure and ITO film properties is discussed. A practical application (a Dye Sensitized Solar Cell) is proposed.
3
Catheline, Amélie. "Films de nanotubes de carbone et solutions de graphène." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14404/document.
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Les travaux de recherche effectués lors de cette thèse s'articulent autour de deux matériaux carbonés: les nanotubes de carbone et le graphène. Leur point commun réside dans la technique de mise en suspension qu'est la dissolution douce. Cette méthode se base sur la réduction des nanostructures carbonées en polyélectrolytes, autrement dit en nanostructures chargées négativement. Nous nous sommes intéressés d'une part à la préparation et à l'étude de films transparents conducteurs à base de nanotubes de carbone pour des applications en électronique organique en tant qu'électrode transparente et en électrochimie. D'autre part, les travaux présentent une étude des solutions de graphène. Nous nous sommes notamment attachés à démontrer la présence de graphène en suspension dans certains solvants organiques par analyse directe de ces solutionsTwo carbon materials have been studied during this thesis: carbon nanotubes and graphene. Their common point is the method used to prepare suspensions which is the mild dissolution. Using this method, carbon nanostructures can be reduced into polyelectrolytes, id. into negatively charged nanostructures. The first part deals with transparent and conductive films of carbon nanotubes which have been prepared and studied as transparent electrode for electronic applications and for electrochemistry. The second part of this work deals with graphene in solution in different solvents. The aim of this work was to show the presence of graphene by direct analysis of these graphene solutions
4
Yavas, Hakan. "Development Of Indium Tin Oxide (ito) Nanoparticle Incorporated Transparent Conductive Oxide Thin Films." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614475/index.pdf.
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Indium tin oxide (ITO) thin films have been used as transparent electrodes in many technological applications such as display panels, solar cells, touch screens and electrochromic devices. Commercial grade ITO thin films are usually deposited by sputtering. Solution-based coating methods, such as sol-gel however, can be simple and economic alternative method for obtaining oxide films and also ITO. In this thesis, &ldquoITO sols&rdquo
and &ldquo
ITO nanoparticle-incorporated hybrid ITO coating sols&rdquo
were prepared using indium chloride (InCl3
5
Saim, Hashim B. "A study of thick films of indium-tin-oxide (ITO) and the feasibility of using ITO for fabricating photovoltaic cells." Thesis, Loughborough University, 1985. https://dspace.lboro.ac.uk/2134/14150.
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Thin films of In203-Sn02 transparent semiconducting oxides (ITO) have been prepared by conventional thick-film method normally employed in microelectronics technology. When fired at approximately 650 C in a continuous air flow, a continuous thick-film of the semiconducting oxides (about 3000~ thick) is obtained. The sheet resistance of the as-deposited film is about 6kQ/sq. which can be reduced to about 300 Q/sq. upon heat o -3 treatment at 300 C in a vacuum of 10 -3 torr. A slight increase of the sheet resistance to about 1 kQ/sq. occurs on ageing at ambient atmospheres for a few days. It is thought that the origin of the conductivity in the as-deposited films is due to the presence of defects resulting from the non-stoichimetric composition of the material - i.e. oxygen vacancies. and/or intestitial tin ions. The remarkable increase in conductivity when the sample is heated in a vacuum is a result of an increase in the amount of native defects from shallow donor levels in the tin-oxide. At ambient atmosphere, the film loses tin due to gradual oxidation process which again leads to an increase in resistivity. The Hall effects measurements shows that changes due to annealing are caused primarily by change in mobility, and a slight change in carrier concentration. Vacuum annealing also eliminates the effects of annealing in air. This rules out any structural changes in the film due to annealing Nature of the annealing characteristics shows that the presence of oxygen is the cause of the changes in electrical properties. Structural studies show that the films are polycrystalline with crystal sizes of 100-200 R. There is no obvious change in crystal sizes due to 11 annealing process. Electron diffraction studies also show no obvious change due to the annealing process. This, together with the vacuum annealing and mobility studies might suggest that the conductivity in the films is due to non-stoichiometric effects. Auger electron spectroscopy (which allows accurate compositional analysis) and in-depth profiling of the elements in the film was carried out. The studies show that there is a slight increase in the In/O and Sn/O ratio for the annealed films compared to the as-deposited films. All the samples show light transmissivity in the visible region of the spectrum. The fundamental absorption edge appears near 3000R which corresponds to an optical band-gap of ~4.0eV. The fundamental optical absorption edge shifts slightly towards the lower wavelength for the more conductive samples. This shift is thought to be due to Burstein shift. There is no remarkable absorption observed up to about 2pm for the unfired and unannealed films. For the annealed films however, there is an increase in absorption as the wavelength increases, possibly due to free carrier absorption. Although these results do not indicate conductivity and mobility as high as that obtained by using thin-film techniques, a feasibility study has been undertaken to fabricate heterojunction solar cells (HJSC's) of ITO-SiO -Si (single crystals). x In this structure, the ITO thick film acts not only as a conducting surface layer that induces the SIS junction but also acts as an antireflection coating. The experimental results on the working cells have shown a V = 400 mV, and J = 0.5 mA/cm2 , cc Sc and efficiency of 2 ~ 0.2% under a total insulation of = 800 W/m. The dark and illuminated I-V characteristics have been compared with published SIS solar cell data and attempts have been made to explain the mechanism of the cells.
6
Rasia, Luiz Antônio. "Estudo e aplicação das propriedades elétricas, térmicas e mecânicas de materiais amorfos piezoresistivos em transdutores de pressão." Universidade de São Paulo, 2009. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-29062009-170433/.
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Neste trabalho é apresentado o estudo teórico-experimental a respeito das propriedades piezoresistivas de dois tipos de materiais com estrutura amorfa. O primeiro material estudado é o carbono semelhante ao diamante e o segundo é o óxido de estanho dopado com índio. O estudo compreende o levantamento bibliográfico sobre os materiais, projeto teórico e prático de estruturas individuais de testes e piezoresistores configurados em ponte completa, além da realização das caracterizações elétricas, mecânicas e térmicas de acordo com um arranjo experimental proposto. As caracterizações experimentais foram implementadas usando a técnica de flexão de uma viga engastada e a teoria das pequenas deflexões. Os diferentes materiais caracterizados e analisados apresentaram o efeito piezoresistivo e um sinal de sensibilidade mecânica condizente com as características esperadas para estes filmes. Ambos os filmes respondem as variações da temperatura de forma linear e apresentam uma direção de dependência com a temperatura. Os filmes de carbono amorfo hidrogenado livre de dopantes apresentam curvas de corrente e tensão características indicando um mecânismo de condução elétrica complexo devido a sua diversidade de microestruturas e relacionado aos parâmetros de processos de deposição. Os filmes com nitrogênio são mais estáveis termicamente com coeficientes da ordem de - 4900 ppm/ºC. Os resultados encontrados indicam a existência de dois tipos de portadores de cargas responsáveis pela mobilidade média, resistividade e efeito piezoresistivo. Os filmes de óxido de estanho dopado com índio livre e com 5 % e 10 % de oxigênio no plasma apresentam características de diminuição da resistência elétrica com o esforço mecânico e exibem efeitos de piezoresistividade na faixa de - 12 a - 23. Amostras destes filmes com oxigênio apresentaram um fator de sensibilidade mecânica muito baixa e são menos estáveis termicamente que as amostras livres de oxigênio. Os filmes estudados podem ser usados em aplicações envolvendo extensiometria ou mesmo em sensores de pressão piezoresistivos após adequação do processo de deposição e de recozimentos térmicos.This tesis presents the piezoresistivity theoretical and experimental study for two materials with amorphous structure. The first material is the Diamond Like Carbon and the other is the Indium Tin Oxide. The work includes the bibliographic study, theoretical and practical design of structures for testing individual and piezoresistors configured in bridge, in addition to the completion of the characterizations electrical, mechanical and thermal according to a proposed experimental arrangement. The experimental characterizations have been implemented using the technique of cantilever and the theory of small deflections. The different materials analyzed showed the piezoresistive effect with some order of magnitude and a sign of sensitivity to mechanical stress of tension consistent with the characteristics expected for these types of films. Both films respond to changes in temperature in a very linear and have a direction of dependency with the temperature according to the literature. The films of free doping have curves of current and voltage characteristics for this type of material indicating a mechanism of electric conduction very complex because of its diversity of microstructures and processes related to the parameters of the deposition and films with nitrogen are more thermally stable with coefficients of order of - 4900 ppm/ºC. The results indicate the existence of two types of charge carriers responsible for the average mobility and hence the resistivity and the piezoresistive effect. The films of indium tin oxide free and with some oxygen content in plasma presents characteristics of decreased electrical resistance to mechanical stress and exhibit effects of piezoresistive in the range of - 12 to - 23. Samples of these films with oxygen showed a factor of very low mechanical sensitivity and are less stables to thermal effect the samples free of oxygen. The films studied can be used in certain applications such strain gauges or even in piezoresistive pressure sensors, after adequate process of deposition and thermal annealing.
7
Zhou, Jianming. "Indium tin oxide (ITO) deposition, patterning, and Schottky contact fabrication /." LInk to online version, 2006. https://ritdml.rit.edu/dspace/handle/1850/1717.
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Salehi, Alireza. "Radiation and thermal treatment of indium tin oxide (ITO) films and rectifying contacts." Thesis, Cardiff University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388426.
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Hadi, Aseel. "Laser processing of TiO2 films on ITO-glass for dye-sensitized solar cells." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/laser-processing-of-tio2-films-on-itoglass-for-dyesensitized-solar-cells(a2793525-9cf1-4d54-bf7d-a84aabf3ec64).html.
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Mesoporous TiO2 thin film has been considered as a benchmark material in the applications of dye sensitised solar cells (DSSCs) due to a combination of the physical properties that are inherent to the metal oxide and its particular structuring, in addition to its chemical stability and commercial availability. For DSSCs, a more important functionality of mesoporous TiO2 thin films is their extremely high surface and internal surface areas, resulting in high adsorption of dye molecules. However, a major drawback of fabrication of mesoporous TiO2 thin films is its high-temperature furnace sintering at 450à ̄°C-500à ̄°C for 30 min. The high-temperature process prevents the possibility of integrating different electro-optical devices on the same substrate, and the sintering time required would be a hurdle for potentially rapid manufacturing of mesoporous metal oxide thin films for DSSCs. This thesis demonstrates for the first time the use of a fibre laser with a wavelength of 1070 nm and a pulse width of milliseconds for generation of 1) mesoporous nanocrystalline (nc) TiO2 thin films on ITO coated glass, and 2) compact TiO2 layer and mesoporous TiO2 film on ITO coated glass. The first one was achieved by complete vaporisation of organic binder and inter-connection of TiO2 nanoparticles; and the second one was achieved by full crystallisation of TiO2 precursor to form the compact TiO2 layer and the same sintering process described above. Both processes were one-step, and achieved by stationary laser beam irradiation of 1 minute, compared with 30 min for furnace-sintering to form a mesoporous TiO2 film, and 2 h for two-step furnace treatment to form compact layer and mesoporous film on ITO glass. No thermally damaging of the ITO layers and the glass substrates was observed. The DSSC with the laser-sintered TiO2 photoanode at the optimised laser processing condition of 85 W/cm2 and 100 ms/50 ms pulse mode reached higher power conversion efficiency (PCE) of 3.20% for the TiO2 film thickness of 6 à ̄ÂÂm compared with 2.99% for the furnace-sintered; the DSSC with the laser-treated compact TiO2 layer and mesoporous TiO2 film on ITO glass at the optimised laser treatment condition of 85 W/cm2 and 125 ms/25 ms, reached 5.76% compared to 4.83% with the furnace-treated. Electrochemical impedance spectroscopy (EIS) studies revealed that the laser sintering effectively decreased charge transfer resistance and increased electron lifetime of the TiO2 thin films. It is believed that the use of the fibre laser with over 40% wall-plug efficiency offers an economically-feasible, industrial viable solution to the major challenge of rapid fabrication of large scale, mass production of mesoporous metal oxide thin film based solar energy systems, potentially for perovskite and monolithic tandem solar cells, in the future. Another part of the thesis presents a detailed investigation on the improvement of photovoltaic performance of furnace-sintered TiO2 films on ITO-coated glass using an excimer laser with a wavelength of 248 nm and possesses a rectangular beam profile and has a full width at half maximum (FWHM) pulse duration of 13-20 ns. This was achieved by modifying the surface of the furnace-sintered TiO2 films to increase the roughness, which led to increased optical absorbance via light-trapping. The laser process was carried out with variation of laser fluence and number of pulses per unit area. Under the optimised laser fluence of 34 mJ/cm2 and number of pulses of 50, the DSSC with the laser-modified TiO2 photoanode showed a high power conversion efficiency of 2.99% than 2.10% without the laser treatment. EIS studies showed that the films modified under the optimised laser parameter effectively decreased charge transfer resistance and increased electron lifetime of the TiO2 thin films.
10
Benhaliliba, M., C. E. Benouis, and Y. S. Ocak. "Nanostructured Al doped Sn02 films grown onto ITO substrate via spray pyrolysis route." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20530.
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We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties are investigated. The sprayed films are grown onto ITO substrate at 300°C from (SnCl4, 5H2O)as precursor. The content of Al
is kept at 3 % in the solution. Structural, optical, electrical and surface properties are investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence.
The visible transmitance exceeds 85%, the band gap is 3.7 eV.Nanotips are observed by 3D atomic force microscope (AFM) picture. The films exhibits very low resistivity found to be 9.85 10-5.cm, a high electron concentration around 1021cm-3, and low mobility 20 cm2/Vs.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20530
11
BAYONA, GUSTAVO ADOLFO LANZA. "DEVELOPMENT OF ITO THIN FILMS FOR INVERTED (IOLEDS) AND TRANSPARENT (TOLEDS) ORGANIC ELECTROLUMINESCENT DEVICES." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2012. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=21772@1.
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PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIROCOORDENAÇÃO DE APERFEIÇOAMENTO DO PESSOAL DE ENSINO SUPERIOR
PROGRAMA DE SUPORTE À PÓS-GRADUAÇÃO DE INSTS. DE ENSINO
Neste trabalho são apresentados os resultados da produção e caracterização de dispositivos orgânicos emissores de luz invertidos (IOLEDs) e trasnparentes (TOLEDs). Como eletrodo superior transparente , utilizou-se o óxido de índio estranho (ITO), que foi depositado via pulverização catadótica assistida por radiofrequência sobre camadas protetoras ôrganicas (CuPC) e metálicas (Alumínio). Para evitar possivéis danos efetuados nas camadas dos dispositivos pelo processo de pulverização catódica, as disposições de ITO foram realizadas a baixa potência. Primeiramente, os filmes de ITO foram caracterizados elétrica e opticamente. A seguir, foi estudada a interaçãoentre a superfície das camadas protetoras (CuPC e Alumínio) e o filme de ITO. Por fim, os dispositivos IOLEDs e TOLEDs foram caracterizados através de medidas de eletromuninescência, densidade de corrente e luminância, todas elas, em função da tensão aplicada. A paritir desses estudos foi possivélproduzir dipositivos de TOLEDscom transmitânciamédia de 70 por cento na região do espectro visível.
This work presents the results of production and characterization of organic light emitting devices inverted (IOLEDs) and transparent (TOLEDs). As transparent top electrode, a thin film of indium tin oxide (ITO) deposited via rf magnetron sputtering was used. The ITO films were deposited onto organic (CuPC) and metal (Aluminum) protective layers. In order to provent the damage incurred on the organic and metal layers by the sputtering process, the ITO disposition carried out at room temperature and under low rf power. First, the ITO films were characterized by electrical and optical measures. Next, the interaction between the surface of the protective layers (CuPC and Aluminum) and the ITO film was analyzed. Finally, the IOLEDs and TOLEDs devices were characterized by electroluminescence, current density and luminance measures, all as a function of the applied voltage. Form the studies, was possible to produce IOLEDs devicesonto opaque substrates and TOLEDs devices whit average transmittance of 70 per cent in the visible range.
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Eker, Zeynep. "Preparation And Characterization Of Titania-silica-gold Thin Films Over Ito Substrates For Laccase Immobilization." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/3/12611022/index.pdf.
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The aim of this study was to immobilize the redox enzyme laccase over TiO2-SiO2-Au thin film coated ITO glass substrates in order to prepare electrochemically active surfaces for biosensor applications. Colloidal TiO2-SiO2-Au solution was synthesized by sol-gel route and thin film was deposited onto the substrates by dipcoating method. The cysteamine was utilized as a linker for immobilization of enzyme covalently through gold active sites. Preliminary studies were conducted by using invertase as model enzyme and Pyrex glasses as substrates.
The effect of immobilization parameters such as immobilization temperature, concentration of enzyme deposition solution, immobilization time for laccase were examined. Leakage studies were conducted and storage stability of immobilized laccase was determined. Highest laccase activity was achieved when immobilization was performed with 50 µg/ml solution at 4°
C for 2 hours. Laccase activity decreased after 4 hours of impregnation in enzyme solution. Laccase leakage was observed in the first usage of substrates and 55% activity decrease was determined in the subsequent use which might be attributed to the presence of uncovalently adsorbed enzyme on the fresh samples. In air and in buffer storage stabilities were also tested. It was found that the activity of samples almost vanished after 6 days regardless of storage conditions. Both enzymes had more activity on ITO substrate.
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Kesim, Mehmet Tumerkan. "Sol-gel Processing Of Organically Modified Ito Thin Films And Characterization Of Their Optoelectronic And Microstructural Properties." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614507/index.pdf.
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Indium tin oxide (ITO) thin films were formed on glass substrates by sol-gel method. Coating sols were prepared using indium chloride tetrahydrate (InCl3&bull4H2O) and tin-chloride pentahydrate (SnCl4&bull
5H2O) stabilized in organic solvents (acetylacetone and ethanol). First attempt was to synthesize ITO thin films using standard/unmodified coating sols. The effect of calcination treatment in air (300 &ndash
600 °
C) and number of coating layer(s) (1, 4, 7 or 10) on optoelectronic properties (electrical conductivity and optical transparency), crystal structure and microstructure of ITO thin films were investigated. In addition, single-layer ITO thin films with optoelectronic properties comparable to multi-layered films were prepared by employing organically modified coating sols. Oxalic acid dihydrate (OAD) &ndash
a drying/microstructure control agent&ndash
addition to standard sol formulation was achieved. The rationale was to improve the optoelectronic properties of ITO films through enhancement in microstructure and chemical characteristics upon OAD addition. The effects of OAD content in the sol formulation and post-coating calcination treatment on electrical/optical properties of ITO films have been reported. Finally, the effects of post coating drying temperature (100 &ndash
200 °
C) and time (10 &ndash
60 min) on optoelectronic and microstructural properties of OAD-modified ITO thin films were discussed. Thin films have been characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD),x-ray photoelectron spectroscopy (XPS), ultraviolet-visible (UV-Vis) spectroscopy, fourier transform infrared (FTIR) spectroscopy, atomic force microscopy (AFM) and four-point probe measurement techniques. It was shown that film formation efficiency, surface coverage and homogeneity were all enhanced with OAD addition. OAD modification also leads to a significant improvement in electrical conductivity without affecting the film thickness (45±
3 nm). Highly transparent (98 % transmittance in visible region) ITO thin films with a sheet resistance as low as 3.8±
0.4 k&Omega
/sqr have been obtained by employing coating sols with optimized OAD amount (0.75 M). The optimum post-coating drying temperature (100 °
C) and drying time (10 min) was also determined for 0.75 M OAD-modified ITO thin films.
14
Alves, Vaccari Paulo Roberto. "Near infrared and visible optical properties in electrochromic crystalline tungsten oxide thin films on ITO." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-229122.
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In this project I have studied the optical properties of electrochromic crystalline tungsten oxide, WO3. The practical application could be for a window for desalination of sea water which requires a high absorption coefficient A(λ) for near infrared radiation (NIR), while at the same time a high transmittance T(λ) in the visible spectral range. An electrochromic (EC) material is a material that changes its optical properties when inserting or extracting ions by applying a voltage. The WO3 was prepared on a glass substrate coated by a transparent electrical conductor. The conductor used is tin doped indium oxide. In2O3:Sn, indium-tin-oxide (ITO). The preparation of the thin films has been carried out using DC magnetron reactive sputtering. The structure of unheated tungsten oxide is amorphous and once heated it is crystalline. Li+ ions were inserted into the tungsten oxide material with electrochemical methods to create the coloring effect. The optical properties were recorded in the 330 < λ < 2500 nm wavelength range by use of a Perkin-Elmer Lambda 9 spectrophotometer. The highest reflectance R(λ), approximately 50% in NIR and absorption coefficient A(λ) = 1,5 x 105 [cm-1], were measured for the sample that had been post annealed at 500 deg C. The crystalline tungsten oxide films provides for a good switching capability in the NIR spectral range wile at the same time maintaining a high transmittance T(λ) in the visible spectrum.
15
Mohammed, Osman Khan. "Pre-edge analysis of X-rays absorption spectra in TiO2 modified films." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amslaurea.unibo.it/7374/.
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The thesis is mainly focused on the pre-edge analysis of XAS spectra of Ti HCF sample hexacyanocobaltate and hexacyanoferrate samples doped on a Indium Tin Oxide (ITO) thin film. The work is aimed at the determination of Ti oxidation state, as well as indication of various coordination number in the studied samples. The experiment have been conducted using XAFS (X-ray absorption fine structure)beamline at Elettra synchrotron, Trieste (Italy)
under supervision of Professor Marco Giorgetti, Department of Industrial Chemistry, University of Bologna.
The Master thesis accreditation to fullfill the ASC Master of Advanced Spectroscopy in Chemistry Degree requirement.
16
Uckert, Kyle. "High Temperature Resistivity and Hall Effect Measurements of Conductive and Semiconductive Thin Films." Ohio University Honors Tutorial College / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1276713762.
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Wang, Dongxin. "Preparation and characterisation of transparent conducting oxides and thin films." Thesis, Loughborough University, 2010. https://dspace.lboro.ac.uk/2134/7042.
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Transparent conducting oxide (TCOs) thin films, including non-stoichiometric tin doped indium oxide (ITO) and aluminium doped zinc oxide (AZO), have found considerable applications in various displays, solar cells, and electrochromic devices, due to their unique combination of high electrical conductivity and optical transparency. TCO thin films are normally fabricated by sputtering, thermal vapour deposition and sol-gel method. Among them, sol-gel processing, which was employed in this project, is no doubt the simplest and cheapest processing method, The main objectives of this project were to produce indium tin oxides (ITO) and zinc aluminium oxides (AZO) nanoparticles with controlled particle size and morphology and to fabricate TCO thin films with high optical transmittance and electrical conductivity. In this research, hydrothermal method was used to synthesise ITO and AZO nanoparticles. Tin oxides, zinc oxides, ITO and AZO particles with the particle size ranging from 10 nm to several micrometers and different morphologies were synthesised through controlling the starting salts, alkaline solvents and hydrothermal treatment conditions. ITO and AZO thin films were fabricated via sol-gel technique through dip coating method. The effects of the starting salts, alkaline solvents, surfactant additives and coating and calcination conditions on the formation of thin films were investigated. XRD, TEM, FEG-SEM, DSC-TGA, UV-Vis spectrometer and four-point probe resistance meter were used to characterise the crystallinity, particle size, morphology, optical transmittance and sheet resistance of the particles and thin films. Crack-free thin films with high optical transmittance (>80% at 550 nm) and low sheet resistances (2.11 kΩ for ITO and 26.4 kΩ for AZO) were obtained in optimised processing conditions.
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Neff, Joel Emerson. "Investigation of the effects of process parameters on performance of gravure printed ITO on flexible substrates." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29625.
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Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2009.Committee Chair: Melkote, Shreyes; Committee Co-Chair: Danyluk, Steven; Committee Member: Graham, Samuel. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Diniz, Antonia Sonia Alves Cardoso. "Microstructural studies of Inâ†2Oâ†3 and Sn:Inâ†2Oâ†3 (ITO) thin films for solar energy applications." Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.284260.
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Reis, Rafael Machado. "Filmes de azul da Prússia sobre ITO: estudos de pós-tratamento e estabilidade frente diferentes pHs e diferentes compostos fosfatados." Universidade de São Paulo, 2008. http://www.teses.usp.br/teses/disponiveis/75/75131/tde-20082009-152323/.
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Nesta dissertação estudou-se a influência dos parâmetros de pós-tratamento eletroquímico, em condições potenciodinâmicas, sobre a estabilidade e reatividade frente à organofosfatos do filme eletrodepositado de hexacianoferrato (II) de ferro (III), mais conhecido como azul da Prússia (PB). O pós-tratamento do filme em baixas velocidades de varredura leva à formação do PB \"solúvel\" com a formação de grãos maiores e um filme mais estável eletroquimicamente como demonstrado por ensaios de voltametria cíclica (VC), microscopia de força atômica (AFM) e espectroscopia de fotoelétrons excitados por raios X (XPS). Filmes pós-tratados em meio HCl/KCl 0,1M foram mais eletroquimicamente estáveis em meio ácido, enquanto filmes submetidos à pós-tratamento em meio neutro foram mais estáveis em meio neutro.In this work it was studied the influence of the electrochemical posttreatment parameters in potenciodinamics conditions on the stability and reactivity against organophosphates by eletrodepositaded iron (III) hexacyanoferrate (II), better known as blue of Prussia (PB). The posttreatment of the film at low sweep rates leads to the formation of the PB \"soluble\" with the formation of larger grains and a more electrochemically stable films as demonstrated by cyclic voltammetry (VC), atomic force microscope (AFM) and X-ray photoelectron espectroscopic (XPS) tests. Films post-treated in HCl/KCl 0.1 M media were more electrochemically stable in an acid media, while films submitted to post-treatment in neutral media were more stable in neutral media.
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Joshi, Salil Mohan. "Effect of heat and plasma treatments on the electrical and optical properties of colloidal indium tin oxide films." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/52170.
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The research presented in this dissertation explores the possibility of using colloidal indium tin oxide (ITO) nanoparticle solutions to direct write transparent conducting coatings (TCCs), as an alternative route for TCC fabrication. ITO nanoparticles with narrow size distribution of 5-7 nm were synthesized using a non-aqueous synthesis technique, and fabricated into films using spin coating on substrates made from glass and fused quartz. The as-coated films were very transparent (>95% transmittance), but highly resistive, with sheet resistances around 10¹³ Ω/sq . Pre-annealing plasma treatments were investigated in order to improve the electrical properties while avoiding high temperature treatments. Composite RIE treatment recipes consisting of alternating RIE treatments in O₂ plasma and in Ar plasma were able to reduce the sheet resistance of as spin coated ITO films by 4-5 orders of magnitude, from about 10¹³ Ω/sq in as-coated films to about 3 x 10⁸ Ω/sq without any annealing. Plasma treatment, in combination with annealing treatments were able to decrease the sheet resistance by 8-9 orders of magnitude down to almost 10 kΩ/sq , equivalent to bulk resistivity of ~0.67 Ω.cm. Investigation into effectiveness of various RIE parameters in removing residual organics and in reducing the sheet resistance of colloidal ITO films suggested that while reactive ion annealing (RIE) pressure is an important parameter; parameters like plasma power, number of alternating O₂-Ar RIE cycles were also effective in reducing the residual organic content. Impedance spectroscopy analysis of the colloidal ITO films indicated the dominance of the various interfaces, such as grain boundaries, insulating secondary phases, charge traps, and others in determining the observed electrical properties.
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Che, Hui. "Surface Chemistry and Work Function of Irradiated and Nanoscale Thin Films Covered Indium Tin Oxides." Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1157651/.
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In this study, we used UV-ozone Ar sputtering, X-ray photoelectron and ultra-violet photoelectron spectroscopies and sputtering based depositions of RuO2 and Se nano-layers on indium tin oxides (ITOs). We elucidated the effect of Ar sputtering on the composition and chemistry of Sn rich ITO surface. We demonstrated that while a combination of UV-ozone radiation and Ar sputtering removes most of the hydrocarbons responsible for degrading the work function of ITO, it also removes significant amount of the segregated SN at the ITO surface that's responsible for its reasonable work function of 4.7eV. We also demonstrated for the first time that sputtering cleaning ITO surface leads to the reduction of the charge state of Sn from Sn4+ to Sn2+ that adds to the degradation of the work function. For the nano-layers coverage of ITO studies, we evaluated both RuO2 and Se. For RuO2 coated ITO, XPS showed the formation of a Ru-Sn-O ternary oxide. The RuO2 nano-layer reduced the oxidation state of Sn in the Sn-rich surface of ITO from +4 to +2. The best work function obtained for this system is 4.98eV, raising the effective work function of ITO by more than 0.5 eV. For the Se coated ITO studies, a systematic study of the dependence of the effective work function on the thickness of Se overage and its chemistry at the Se/ITO interface was undertaken. XPS showed that Se reacts with Sn at the Sn-rich surface of ITO determined the presence of both negative and positive oxidation state of Se at the Se/ITO interface. The Se also reduced the oxidation state of Sn from Sn4+ to Sn2+ in the Sn-rich ITO surface. The highest effective work function obtained for this system is 5.06eV. A combination of RuO2/Se nanoscale coating of optimally cleaned ITO would be a good alternative for device applications that would provide work function tuning in addition to their potential ability to act as interface stabilizers and a barrier to reaction and inter-diffusion at ITO/active layers interfaces responsible for long term stability of devices and especially organic solar cells and organic light emitting diodes.
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Wu, Wen Fa, and 吳文發. "R. F. magnertron sputtered ITO films and ITO films with antireflective and hard coating." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/07066301807777463025.
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Tsai, Min-Lun, and 蔡明倫. "Research of ITO films on PET." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/72995998164503728933.
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碩士國立中央大學
光電科學研究所
93
We research the influence and difference of ITO thin film coating with different coating system and coating condition. We found that coating with e-beam evaporation with IAD makes film denser, but the effect is not good as magnetron sputtering. Coating ITO thin film on PET with sputtering system and different coating parameter, we can get a bit set of parameter: Oxygen flow 3sccm, sputtering power 500w. With such coating parameter, we can have sample with average 80% transmittance at visible range and 5*10-4.Observing the samples coating by sputter with IAD and further plasma pre-treating or post-treating, we found that the average transmittance at IR range drops and refractive indices increases, indicating that the film become denser. However the extinction coefficient rises that may due to the increase of the defect.
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Tian, Li-Ren, and 田力仁. "Characteristics of Transparent Conductive ITO Films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/583hz8.
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碩士淡江大學
機械與機電工程學系碩士班
103
The present study has been successful prepared the Ti and Zn -doped ITO powders by the methods of co-precipitation and solvothermal, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Ti and Zn -doped ITO powders tended to increase and then the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Ti and Zn –doped ITO powders have no significant effect on the conductivity.
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MIN, LIN TZU, and 林子閔. "Fracture analysis of ITO thin films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/32801283639599813724.
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碩士聖約翰科技大學
自動化及機電整合研究所
96
With outstanding performance, thin films have been widely used in broad applications. However, fracture induced in manufacture or application processes will reduce the performance of thin films. In this work, a 300 nm thinkness ITO thin films is deposited by a RF magnetron sputter. Nanoindentation is utilized to test the mechanical properties and fracture toughness of the thin films with various sputter powers and substates. The results show that the hardness and elastic modulus increase as the sputter power increases. The fracture toughness of ITO deposited on PET is smaller than the result on the silicon substrate, where the crack length predicted from plastic zone and indent depth increase whith the increasing sputter power. Moreover, in all cases, the surface resistances of the ITO thin films are below 10 Ω/□, and the preferred orientation are (222).
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Yang, Chun-ming, and 楊峻銘. "The characteristics of ITO/metal/ITO multilayer transparent conductive films by sputtering." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/4gkn9y.
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碩士崑山科技大學
電機工程研究所
93
Transparent conducting films has high properties of transmittance and conductance in the visible range. Because of its special optical and electrical properties, it is used for many application. In order to increase the transmission and resistivity, this thesis was mainly used DC magnetron sputtering method with substrate spin to deposit ITO thin films. The different kinds of metals (Ag and Ti) was added to form ITO/metal/ITO multilayers, then the influence of electrical, optical and structural characteristics were discussed. The experimental results showed, the total resistivity decreased when the metals of Ag and Ti added , because multilayers structure can regard as a effect of parallel resistance circuit. The total resistance was very low because of high conductive metal film in parallel structure, therefore, the purpose of reduce resistivity was achieved. Among the best ITO/Ag/ITO resistivity parameter was 1.57x10-5 Ω-cm, the average optical transmittance was beyond 85%. The ITO/Ti/ITO showed a very low resistivity of 1.7x10-4 Ω-cm and the average transmittance of 65% in as deposited. At post-annealing experimental, when the ITO annealing temperature exceed 400℃, the film was crystallized. The annealing process provide thermal energy to crystallize and eliminate defects, so the resistivity decreased, and the transmittance increased. The best result was the resistivity of 1.22x10-4 Ω-cm and the average transmittance beyond 92%. When the ITO/Ag/ITO films annealed at 500℃, the ITO layer was crystallized but crystalline of Ag was not found. The annealing process still provide the thermal energy to make the effect of crystallization and eliminating defects, so the resistivity decreased and the high transmittance kept. The best result was the resistivity of 1.22x10-5 Ω-cm and the average transmittance beyond 90%.
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Wan, Ming-An, and 萬明安. "Preparation and Characterization of ITO Thin Films." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/8e7jf4.
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碩士國立臺北科技大學
有機高分子研究所
93
Indium-tin-oxide (ITO) thin film is one of the indispensable materials for optical electronics application. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol-gel method. The initial sols were prepared from anhydrous ethanol solutions of indium nitrate (In(NO3)3.1H2O) and tin chloride dehydrate (SnCl2．2H2O), two potential metal salt precursors for ITO. In order to optimize the preparation conditions for ITO thin film, the following parameters have been changed and studied throughout in this thesis : Sn/In ratio, annealing time, annealing temperature, and number of repeated coating cycles. Depending on compositions, the electrical resistivity of ITO films varied from 47 × 104 to 3.4 × 103 Ω/sq, and the minimum value for the electric resistivity was observed for the films containing 12 % Sn by weight. Increasing heat treatment-temperatures from 350 °C to 600 °C led to increase in conductivity up to one order of magnitude. X-ray diffraction (XRD) was employed for the crystal structure determination, and electron spectroscopy for chemical analysis (ESCA) for chemical state identification. The film resistivity decreases as Sn/In ratio increases, reaching a minimum at 12 % and increases at higher Sn/In value. Similar trend has been found in the ITO grain size as a function of Sn/In ratio. The correlations among the film properties and the film preparation conditions are discussed in this thesis.
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Chen, Shi-Wei, and 陳世偉. "A Development of The ITO-AgTi (or AgTiCu)-ITO Transparent Conductive Thin Films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/09882050055280859130.
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博士國立臺灣大學
材料科學與工程學研究所
95
Using ITO-Metal-ITO (IMI) multilayer structures is the simplest and most effective way to improve the characteristics of the transparent conductive oxide (TCO). The IMI structures have quit low sheet resistance comparing with the single-layer TCO films, such as ITO, although their transmittance is slightly lower than ITO. The characteristics of IMI films strongly depend on the intermediate layer. Silver is the best intermediate layer of IMI films, because it has higher transparency and conductivity than other metals when the film is very thin. However, pure silver films are unstable and easy to agglomerate at a high temperature. An increase in roughness will reduce the conductivity and transparency of IMI films. This study proposes to increase the stability of the Ag layer by alloying with doped Ti or Cu atoms, consequently, to increase the stability of the IMI films. Furthermore, the effect of the doping elements on the silver layer as well as the IMI film is also investigated through varying the deposition temperature, durability testing and annealing. The results indicate that, by the addition of the doping Ti atoms, the roughening of the silver film due to the relaxation of strain energy as deposition can be retarded; the agglomeration of the silver film induced by the moisture penetration can be retarded; and the interdiffusion between the silver and ITO layers when the film is annealed at a high temperature in air can also be retaeded. Therefore, the Ag-Ti film owns smooth and stable surface morphology, the ITO-AgTi-ITO and the ITO-AgTiCu-ITO films keep high conductivity, transparency and excellent durability. After annealing, the ITO-AgTiCu-ITO film owns high transparency (transparency = 91.08 %, it is close to that of the single-layer ITO), quit low resistivity (resistivity = 4.66 x 10-5 Ω.cm, it is lower than that of the single-layer ITO about one order) and excellent durability. The ITO-AgTiCu-ITO film is suitable to replace the single-layer ITO film and be applied as the transparent electrode of the optic-electric devices.
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Sheu, Teng-Kuei, and 許登貴. "Preparation and Surface Analysis of ITO Thin Films." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/24707974911436750277.
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碩士國立臺北科技大學
有機高分子研究所
90
Indium-tin-oxide (ITO) thin film is one of the indispensable materials for current optoelectric technologies. Therefore, the development of an economical process for ITO film production is both practical and significant. In this work, uniform and transparent ITO films have been deposited onto glass by a sol-gel method. The initial sols were prepared from anhydrous ethanol (C2H5OH, 99.8%) solutions of indium nitrate (In(NO3) 3•1H2O) and tin chloride (SnCl4) with different In:Sn weighted ratios. The substrates were dip-coated in the sols followed by thermal annealing at temperature of 550 ℃. The resultant ITO films were characterized using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and scanning electron microscopy (SEM). The film resistivity were measured by the four point probe method at room temperature. The properties of resistivity, transmittance and surface structures of ITO films were investigated and correlated with the film preparation conditions.
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CHAN, MIN-YANG, and 詹旻洋. "Electro-optically Tunable Microdisk Resonators with ITO Films." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/w754q7.
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碩士國立臺北科技大學
光電工程系
107
This thesis proposes an electro-optically modulated lithium niobate microdisc resonant element with ITO electrode is proposed. The circular electrode above the dish and the suspended wire structure connected to it have high electro-optic modulation rate and high quality factor. characteristic. Among them, the thickness of the lithium niobate micro-disc is only 0.4 μm, and the evanescent field extending to the periphery of the dish is large, which causes severe light absorption, so that the resonance light field cannot be generated. In the paper, the ITO transparent conductive layer is used as the electrode layer. Compared with the metal electrode, the high transmittance of ITO can cover the resonant light field at the edge of the microdisk, effectively enhancing the electric field strength and the electric field/light field. The overlap integral is used to achieve electro-optical modulation with high efficiency and high quality factor. The experimental results show that the TE and TM resonance modes of the 20m microdisk-shaped component have the essential quality factors of 8.2×104 and 7.5×104 when the ITO electrode is not added, and TE and TM after depositing the 20 nm ITO film layer. The maximum essential quality factors of the mode are still 1.8×104 and 7.1×103, respectively. The FSR of TE and TM resonance modes are changed from 17.68 nm and 18.13 nm to 17.82 nm and 18.31 nm, respectively. The best electro-optical modulation micro-disc components in the literature (Opt. Express 25(1), 124-129, 2017) have only TE mode electro-optic modulation, and the modulation rate is 3.41 pm/V. The paper proposes a novel electro-optical modulation micro-disc component with ITO film. The electro-optic modulation rate of TE and TM modes can be as high as -30.19 pm/V and -24.31 pm/V, respectively. The TE mode electro-optical modulation rate increases. 8.9 times, and has high electro-optic modulation rate of TE mode and TM mode.
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林學群. "Study on fabrication of electrodeposited ZnO thin films on ITO/glass and ITO/PES substrates." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/49518016413757989960.
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碩士建國科技大學
機械工程系暨製造科技研究所
98
Ion beam sputtering system and RF Magnetron Sputtering technique are used to produce an ITO thin film deposited on glass or plastic substrates to provide a transparent conductive substrate. Then use electrochemical methods together with a number of experimental parameters to produce a ZnO thin film deposited on such conductive substrate. Meanwhile, ZnO thin films on a glass substrate are annealed at different temperatures to investigate the crystallization and optical properties of the film. The results of the study indicate that before annealing, ZnO thin films can effectively enhance the diffraction peak intensity of ZnO (002) with the increase of voltage and depositing time. With the increase of annealing temperature, crystal orientation of ZnO thin films deposited on a glass substrate gradually develops toward the diffraction peak of ZnO. With regard to optical properties, the transmittance of non-annealed ZnO thin films significantly reduces with the increase of voltage and depositing time. However, the transmittance of ZnO thin films deposited on a glass substrate gradually increases with the increase of annealing temperature. The transmittance of ZnO thin films reaches its maximum value at depositing voltage between -1V and 1.3V and at temperature of 350℃. At the depositing voltage of -1.6V, the sample shows that the annealing temperature must be increased in order to obtain an optimal transmission. The resistance of non-annealed ZnO thin films increases with the increase of voltage, while the resistance at -1.6V of ZnO thin films deposited on a glass substrate gradually decreases from 184.57MΩ to 8.52kΩ with the increase of annealing temperature.
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Chen, Yu-Min, and 陳裕閔. "Effect of intercalated ITO layer on the properties of visible-light enable TiO2/ITO films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/27907390961790955134.
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碩士國立高雄海洋科技大學
輪機工程研究所
95
In the study the TiO2/ITO singlelayer film,mutilaminar film and composite film were synthesized on unheated substrate by twin direct current unbalance magnetron sputtering method.Hereafter the excellent crystal titania films,and we can discuss the microstructure and interface of the flms. In the X-ray diffraction (XRD) analysis,transparent electron microscope(TEM) and secondary ion mass spectrum (SIMS) we can analysis the microstructure and profile distributing into surface of the films. In the XRD spectrum it shows that the preferred orientation of ITO is (222),and the constant of crystal lattice decrease when we use the Bragg to calculate it. We can know that the Sn slightly diffuse in the SIMS spectrum.In the TEM patterns of cross-section,we can observe the growing process of the films,first the amorphous layer begins growing above ITO film about 25nm,but after growing a little thickness,the crystalline is began.We can suppose that the growing mechanism is due to the diffusing of Sn.Besides we can observe that the taper columnar structure,and the grain size of the crystal are about 150~180nm.
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Lin, Mei-Hui, and 林美惠. "Characterizations of transparent conductive ITO/Ag/ITO multilayer thin films prepared by DC magnetron sputtering." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/65017233800516398513.
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碩士國立勤益科技大學
機械工程系
100
Indium tin oxide (ITO), have show low electrical resistivity and high optical transmittance in visible light range, are widely used as transparent conductive thin films in the optoelectronic devices such as solar cells, liquid crystal displays (LCD). Indium is the rare earth element with high cost. In order to reduce the usage of indium, the ITO/Ag/ITO multilayer thin films were deposited on glass substrates at 350℃ by DC magnetron sputtering in this study. The microstructure, electrical and optical properties were evaluated by GIXRD, FE-SEM, AFM, SIMS, XPS, Hall measurement, and UV-Vis spectroscopy. The results suggest that the properties of ITO films were affected by power and atmosphere of sputtering. A specimen with high transmittance over 82 % at visible light region and lowest resistivity of 9.2 × 10-4 Ω-cm was obtained with a sputtering power at 60 W and Ar atmosphere. The influences of thickness of Ag layer on the optical and electrical performance of ITO/Ag/ITO films were also analyzed. When the thickness of Ag layer is 10 nm, the resistivity of ITO/Ag/ITO multilayer was 1.8×10-4 Ω-cm, and the average transmittance was 68%.
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洪民翰. "The Study and Fabrication of ITO/Ag/ITO Multilayer Films Applied on Flexible Electrochromic Devices." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/74425015996122309752.
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Lin, Jian-Cheng, and 林建誠. "Conversion Efficiency Enhancement of Single-Junction GaAs Solar Cells Using ITO and Oxide/ITO Films." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/gzett7.
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碩士國立臺北科技大學
光電工程系研究所
105
In this study, the conversion efficiency of two types single-junction GaAs solar cell using the antireflective layer of SiO2 , ITO, and SiO2/ITO deposited by thermally RF-sputter was demonstrated. The passivation, antireflection, and biasing effects to enhance the efficiency are characterized. The optical reflectance, external quantum efficiency (EQE), dark current-voltage (I-V), and photovoltaic current-voltage (J-V) are measured and compared. Type-I: Characterization of the single-junction GaAs solar cells with SiO2, ITO, and SiO2/ITO antireflective coating. (1) The bare GaAs solar cell: the open-circuit voltage (Voc) of 1.05V, short-circuit current density (Jsc) of 22.47 mA/cm2 and conversion efficiency (η) of 19.27% were obtained. (2) The GaAs solar cell with a SiO2 (92.71 nm) ARC, Voc of 1.04 V, Jsc of 25.55 mA/cm2, and η of 21.92% were obtained. (3) The GaAs solar cell with an ITO (71.36 nm) ARC, Voc of 1.05 V, Jsc of 27.47 mA/cm2, η of 23.52% were obtained. (4) The GaAs solar cell with a SiO2 (20 nm)/ITO (71.36 nm) ARC, Voc of 1.05 V, Jsc of 27.25 mA/cm2, and η of 23.48% were obtained. Type-II: Characterization of metal-oxide-semiconductor (MOS) structure GaAs solar cells with different oxide materials of SiO2 and SiNx. For MOS structure GaAs solar cell fabrication, SiNx and SiO2 dielectric thin-films are first deposited on the two bare single-junction GaAs solar cells by sputter deposition, respectively. By using photolithography and sputter deposition, the ITO electrode was then formed between the front electrodes upon the surface of dielectric film. (1) The bare GaAs solar cell, Voc of 1.00 V, Jsc of 21.91 mA/cm2, and η of 17.61% were obtained. (2) The GaAs solar cell subsequently deposited 20 nm thick SiNx, Voc of 1.004 V, Jsc of 23.36 mA/cm2, and η of 18.92% were obtained. (3) The GaAs solar cell subsequently deposited ITO transparent electrode (Named as MOS structure GaAs solar cell), Voc of 1.013 V, Jsc of 27.48 mA/cm2, and η of 22.34% were obtained. (4) The MOS GaAs solar cell biased at -3.5 V, Voc of 1.019 V, Jsc of 35.81 mA/cm2, η of 27.04% were obtained. Besides, the MOS GaAs solar cell with the oxide of SiO2, the Jsc of 26.62 mA/cm2 and 36.46 mA/cm2, the η of 21.50% and 26.64% were obtained under 0 V and -3.5 V biasing voltage.
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Wu, Ding-Fong, and 吳定峰. "The study of ITO thin films with nano metal." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/qee4t7.
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碩士大同大學
材料工程研究所
92
Sol-gel process is widely used to prepare thin films. However sol-gel ITO conducting films have lower conductivity than that from sputtering. Therefore, I attempted to disperse nano metal particles in ITO film in hope to increase the film conductivity without seriously decreasing its light transmission. ITO precurse solutions were prepared from indium chloride and tin chloride (as a dopant). Quartz substrates were first spin coated with silver nitrate solution and reduced in air at 500℃ to obtain dispersed silver particles. Then, ITO precurse solutions were spin-coated on the quartz substrate with dispersed silver particles to from Ag-ITO composite films. The results showed that with 5mol% silver nitrate solution coating, the composite film would have the lowest sheet resistance 1.22 KΩ/sq, which was 52% decrease from the ITO film without disposed Ag particles. The light transmission was 85%, a decrease of 8.6% from ITO film. In the case of coating with 0.1 mol% copper nitrate solution, the Cu-ITO composite film had sheet resistance of 2.283 KΩ/sq and light transmission of 90%, which were 11% and 3.2% decrease from ITO film, respectively.
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Lo, Wen-Ting, and 羅文廷. "Characterization of ITO/poly-ZnO thin films Schottky Diode." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/07744360268493269174.
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碩士國立臺灣大學
物理研究所
101
The formation of transparence vertical structure ZnO thin films by RF magnetron sputter and properties of Schottky contacts have been investigated. First we use RF magnetron Sputter to grow transparence vertical structure ZnO thin films on ITO glass substrate, and use hydrogen peroxide to treat the surface of ZnO thin films in order get Schottky behavior between the contact surface, then use RF magnetron Sputter coating metal layer above to have the Schottky contact complete. The surface treatment of ZnO thin films by hydrogen peroxide had been prove to have good Schottky rectified behavior, in this study we compare the difference of ZnO thin films which grow at different temperature by RF magnetron sputter. We also try different time of hydrogen peroxide surface treatment on the transparent ZnO thin films. We use X-ray to analyze the structure of the ZnO thin film, use FESEM and α-Step to examine to surface statue before and after hydrogen peroxide treatment. Then we obtain the I-V curve of ZnO thin film diodes to check how the rectify behaved. The research result show that ZnO thin films grows at 550˚C with 5 minute of hydrogen peroxide treated at 70˚C get the best performance of Schottky rectified behavior. Fitting by Origin 8 software and calculation, it is show that the ideality factor n can drop to 2.3 . Keywords: Zinc oxide, Transparent conducting oxides, RF sputter, Hydrogen peroxide, Schottky diode.
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Lin, Yen-Cheng, and 林晏徵. "Terahertz spectroscopic studies of ITO thin films and nanostructures." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/98843585189823831652.
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碩士國立交通大學
光電工程系所
97
We investigate the optical and electrical properties of Indium Tin Oxide (ITO) thin film and Indium Tin Oxide (ITO) nanocolumns with the optical characterization methods including Fourier Transform Infrared Spectroscopy (FTIR) and Terahertz Time Domain Spectroscopy (THz-TDS). For different thicknesses of the Indium Tin Oxide (ITO) thin films (189nm~961nm), the plasma frequencies are determined to be from 1600 (rad.THz) to 1950 (rad.THz), and scattering times are in the range of 6~7 fs based on the free electron Drude model. The mobilities of the above Indium Tin Oxide (ITO) thin films are determined to be 32~34cm2/Vs. The carrier concentration is verified to be in the range of (2.8~4.2)×1020. The electrical properties of the thin films derived from non-contact optical techniques agree well with those determined by the conventional Hall measurement. Similarly, the techniques are also introduced to the nanostructure materials, Indium Tin Oxide (ITO) nanocolumn. We study the optical and electrical properties of the sample with the Drude-Smith model and the effective medium approximation (EMA) which are demonstrated in the thesis.
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Hsu, Wei-Ming, and 許惟明. "1/f noise in micrometer-sized ITO ultrathin films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/60068275801424192554.
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碩士國立交通大學
物理研究所
101
We discuss low- frequency noise as the annealing temperature and measure temperature changes. We try to explain carriers’ transmission characteristic in ITO films by mobility fluctuation.
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Wu, Ding-fong, and 吳定峰. "The study of ITO thin films with nano metal particles." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/2zn6wx.
Full textAbstract:
碩士大同大學
材料工程學系(所)
93
Sol-gel process is widely used to prepare thin films. However sol-gel ITO conducting films have lower conductivity than that from sputtering. Therefore, I attempted to disperse nano metal particles in ITO film in hope to increase the film conductivity without seriously decreasing its light transmission. ITO precurse solutions were prepared from indium chloride and tin chloride (as a dopant). Quartz substrates were first spin coated with silver nitrate solution and reduced in air at 500℃ to obtain dispersed silver particles. Then, ITO precurse solutions were spin-coated on the quartz substrate with dispersed silver particles to from Ag-ITO composite films. The results showed that with 5mol% silver nitrate solution coating, the composite film would have the lowest sheet resistance 1.22 KΩ/sq, which was 52% decrease from the ITO film without disposed Ag particles. The light transmission was 85%, a decrease of 8.6% from ITO film. In the case of coating with 0.1 mol% copper nitrate solution, the Cu-ITO composite film had sheet resistance of 2.283 KΩ/sq and light transmission of 90%, which were 11% and 3.2% decrease from ITO film, respectively.
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Tu, Chih-Hsiang, and 杜誌祥. "Fracture analysis of ITO thin films deposited on flexible substrates." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/96391842889531110504.
Full textAbstract:
碩士聖約翰科技大學
自動化及機電整合研究所
97
Indium tin oxide (ITO) thin films deposited on Polyethylene terephtalate (PET) substrates attract intensive interest. ITO thin films that possess low resistance and high transmittance are widely used in the transparently conductive applications of touch panels, LCDs, and solar cells. PET has the advantage of light weight, high shock resistance, flexible stock, and roll-to-roll processing that is a possible replacement of the glass substrate. However, a thin film deposited on a flexible substrate is easy to fracture, since the flexible substrate provides less support. Therefore, fracture analysis of thin films deposited on flexible substrates is studied in this work. ITO thin films are deposited on PET substrates by RF sputtering, where various specimens are considered, including elevating the sputtering temperature and adding a copper interlayer. Nanoindenter, micro scratch, XRD, spectroscope, and four-point probe are utilized to test the mechanical properties, fracture toughness, and photo electric properties of the ITO thin films. The result shows that the mechanical properties, fracture toughness, and photo electric properties are improved as elevates the sputtering temperature or adds the copper interlayer. Although elevating the sputtering temperature increases the resistance and adding the copper interlayer decreases the transmittance, nevertheless, the loss portions are still in the acceptable region.
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Chen, Sih-wei, and 陳思瑋. "Characterization and properties of IO/ITO transparent conducting multilayer films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/73320652966854554240.
Full textAbstract:
碩士義守大學
材料科學與工程學系碩士班
96
This research used the radio frequency magnetron sputtering to grow In2O3 ( i.e. IO ) on the glass substrate which is the intermediary layer, then sputtered the ITO thin film on the intermediary layer to form two layers of IOITO and ITOIO. The influences of process parameters to the thin film property such as structure, the electric properties and the optical property of thin film will be discussed. The transmittance and the electronic resistivity of the ITO thin film by changing the deposition time, the distance between the fixed target and the substrate, the RF sputtering power, the partial pressure of the gas and the argon flow have significantly impact by these factors. The correlation of crystal structure, surface morphology to its electron and optical property will be addressed in detailed. Regarding the structure of two thin films of IO ITO and ITO IO, we observe the influence of its different thickness composition to its transmittance and the electronic resistivity, and discover the best electrical conductivity and the transmittance. This experiment uses the radio frequency magnetron sputtering system to grow the ITO thin film on the corning 1373 glass substrate to change the thickness of In2O3 and ITO thin film, and then controls the deposition time suitably (the parameters are 5, 10, 15, 20, 25, 30 minutes separately). To fix sputtering power (50W), the substrate temperature (R.T. ), the working pressure (3 mTorr), the flow of inert gas Ar ( 20 sccm ) and the distance between the target and the substrate (50 mm) are choice and found the best parameter of experiment. The result shows that the double-decked compound film which sputtered by IO-20min ITO-30min has low resistivity and high transmittance. The electronic resistivity is 2.292 x 10-4 Ω-cm, the carrie concentration is 1.344 x 1021 cm-3 and the carrier mobility is 20.26 cm2 / V. The average transmittance is above 80% in visible light area. In the same time the specimen with optimal property which is sputtered w IO-20min ITO-30min was observed by the TEM cross-section to discuss the interface relation between the double-decked compound films by the method that depositing the film on the Si substrate.
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Cheng, Wei-Lun, and 鄭維倫. "Structural and opto-electronic characterizations of the ITO thin films." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/47590894970761715423.
Full textAbstract:
碩士國立中正大學
光機電整合工程所
98
Indium tin oxide (ITO) is an important transparent conducting material, especially as transparent electrodes of flat panel display (FPD) including solar cells and touch panels. In this study, ITO thin films were fabricated by the sol-gel spin-coating method with different indium precursor solutions synthesized from In(NO3)3 or InCl3 (denoted as N-ITO and Cl-ITO, respectively). Annealing temperature was changed and analyzed in order to know the relationship between annealing conditions and films properties. We investigated that when the annealing temperature was increase, the conductivity was increase and the optical transmittance was more than 90 % in the visible range. In N-ITO thin films, the refractive index (1.84 at λ = 550 nm), packing density (0.83), resistivity (3.9×10-3 Ω-cm), and optical band gap (3.95 eV) are higher than that of Cl-ITO thin films, which can be attributed to the higher densification, lower crystallinity, and more carrier concentration for N-ITO thin films, these qualities already reached to the order of touch panel in the industry.
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Wu, Hung-Yi, and 吳鴻儀. "Mechanical Properties and Resistivity of ITO-coated PET Flexible Films." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/38904344819287505446.
Full textAbstract:
碩士逢甲大學
機械工程學所
100
For recent years, commercial market demanded for transparent conductive oxide (TCO) has grown relatively quickly. Usually TCO thin films deposited on Polyethylene terephthalate (PET) substrate use in soft flexible electronic products. The design of flexible electronics must be able to withstand the consumer operation damage and collision damage. However, if the properties of the material are difficult to achieve, leads to the design criterion with the actual product performance does not meet. Therefore, to study the mechanical properties of the macromolecule thin films for soft substrate is significant factor on the development of flexible electronic products. This thesis is to study the mechanical properties and Resistivity of Indium Tin Oxide (ITO) thin films by combining projection fringe and bulge test method. The circle thin film is subjected to uniform pressure through bulge test method. After deformed images collected, the images are under process in histogram equalization, minimum mean square error filtering, the phase shift method, and phase unwrapping techniques to obtain the deformation of thin films. Then, the micro tensile testing system is used herein to measure the Young’s modulus of the thin film to assist obtaining the Poisson’s ratio and residual stress, via the fitting curve of the pressure-displacement relationship of the bulge’s zenith. The film was measured by the expansion of the resistivity change in order to understand the characteristics of the resistance of the ITO flexible substrate. The results revealed that for the ITO flexible substrate, the thickness is thinner, its Young’s modulus and Poisson`s ratio will be bigger. On the other hand, if the thickness of the ITO flexible substrate is thicker, residual stress is relatively smaller. The resistance change of the film was measured under the bulge test, it shows that the different thickness of the film with the pressure aided will increase the resistivity and is relatively larger. Furthermore, after release the pressure of the bulge test, the ITO thin films can’t restored to its original resistivity state. It may be the crystal inside the film specimen has damaged.
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Chang, Chun-Yu, and 張淳瑜. "The Properties of Transparent Conductive Oxide ITO Films Flexible Substrates." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/77824003032172702583.
Full textAbstract:
碩士淡江大學
機械與機電工程學系碩士班
101
Precipitation method In this study were prepared successfully doped La, Mo, K –doped ITO powders, its doping concentration of 4at%, 6at%, 8at%, to explore its powder color, electrical and optical properties. And solvothermal increase the ITO powder doped with oxygen ion vacancies by XRD diffraction doping elements that do not change the characteristic peak ITO, and then analyzed by the full spectrum, that there are La,K-doped can improve the transmittance of ITO, so that in the visible region to achieve good penetrate, penetration Mo-doped will make the poor; by the Hall voltage measurements of its electrical properties, can know the doping element does not improve the conductivity of ITO, the amount of dopant ions will increase the carrier concentration, but will decrease the mobility.
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Huang, Shang-Yun, and 黃上昀. "Researches of ITO thin films prepared by reactive magnetic sputtering system applied in ARAS film." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/54718156065895798299.
Full textAbstract:
碩士國立臺北科技大學
材料及資源工程系碩士班
90
When light pass through, the glass pane reflects over 8% of the impinging light. This reflectance causes the disturbance in various cases and in optical systems consisting of many individual layers that is inadmissible. Since there is also a concern to minimize the accumulation of dust on cathode ray tubes the AR coating has to be combined with a transparent and conductive layer resulting in a so-called antireflective-antistatic (ARAS) system. We can get better thin film qualities and uniformity by using DC and RF reactive magnetic sputtering system than using evaporation or CVD process. The ITO films were deposited by DC reactive magnetic sputtering system using ITO target. The composition of the ITO target is 90% indium oxide and 10% tin oxide. The films deposited at substrate temperature of 250℃. The base and working pressure were 2×10-5 Torr and 2.3×10-3 Torr. We changed the parameters of thin film thickness, reactive gas flow, and sputtering power. It was found that the transmittance (T), reflectance (R) and the refractive index (n) of ITO thin films were changed with different thickness of ITO thin films in sine wave. The maximum transmittance is over 91% with the film thickness 1500Å, Ar/O2=400/20, and power 2kW. The refractive indexes of ITO thin films were changed in the range of 1.8 to 2.2 with different thickness. The SiO2 films were deposited by DC reactive magnetic sputtering system using SiO2 target. The thin film qualities of SiO2 didn’t change much with different parameters. In this case, according to different refractive indexes in different ITO films thickness, we controlled the other parameters of sputtering system to achieve the maximum transmittance. Then we deposited ITO and SiO2 thin films according to the theory of optical thin films. We found that it can be an ARAS thin film in the design of Glass/ITO/SiO2/Air with lowering the reflectance 1-4% and sheet resistance about 115.7Ω/□.
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Lin, Cheng-Che, and 林正哲. "Electrical and Optical Properties of Rare- Earth-Doped ITO Thin Films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/13295600598211379216.
Full textAbstract:
碩士國立中正大學
光機電整合工程所
97
In this thesis, ITO films were prepared by sol-gel spin-coating method as the transparent conducting layer of solar cell to utilize sunlight in the near ultraviolet high-energy section of 300-400 nm effectively. Investigations include two parts to improve the luminescent efficiency of the indium tin oxide film: (i) Nanophosphor powders prepared by co-precipitation method were added to the ITO films; (ii) The indium tin oxide films were doped with rare-earth elements. Two above-mentioned methods do not influence ITO conductivity and light transmission, which make absorption layer of the solar cell absorb greater wavelength regions effectively, and then improve the photoelectric conversion efficiency. ITO precursor solutions were prepared from indium chloride, tin chloride and Eu3 +, Tb3 +, Y3 + and Eu3 + codoped, Eu3 +-doped Y2O3 powders were used as dopants; the colloid solutions were spin-coated on the glass and quartz substrates, respectively. The composite films have the lowest sheet resistance 48 ohm/sq and the transparency in visible region can reach 94.67 %.By mixing the indium tin oxide film with Eu3+ (0.1 mol %)-doped Y2O3 (2 mol %) powder , sheet resistance reaches minimum 58 ohm/sq (the resistance increases 18 %), and the visible light transmittance approaches to 94.3 %.Y3+ (2 mol %)-Eu3+ (0.1 mol %) codoped indium tin oxide film possess minimum 66 ohm/sq sheet resistance (the resistance increases 45 %), and the 94.67 % visible light transmittance.
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TA, TSAI FA, and 蔡發達. "Study of mechanical properties and wearing characteristics of ITO thin films." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/02641960549542783478.
Full textAbstract:
碩士聖約翰科技大學
自動化及機電整合研究所
96
Mechanical properties and wearing characteristics of transparently conductive Indium Tin Oxide (ITO) thin films deposited on glass and PET substrates with various sputtering power are studied in this work. A RF magnetron sputter is employed to deposit a 200±10nm thickness ITO film on the substrate in which the sheet resistance is controlled under 35 Ω/□ and the light transmittance is over 80 % at 400 nm ~ 900 nm visible as well. The preferred orientation of the ITO thin film is (222) measured by X-ray diffraction. The mechanical properties of the specimens are subsequently tested by nanoindentation and nanoscratch. The results show that, as the sputtering power increases from 30 to 50 W, the hardness of the ITO thin film increases from 116.3 to 13.02 GPa. Meanwhile, the Young’s modulus increases from 116.3 to 118.17 GPa for the glass substrate, and 32.15 to 47.63 GPa for the PET substrate, respectively. From the nanoscratch testing, the wearing resistance decreases from 0.465 to 0.339 GPa for the glass substrate, and 0.037 to 0.022 GPa for the PET substrate. The results indicate that the mechanical properties of the ITO thin film deposited on the glass substrate are much better than the values on the PET substrate. It emphasizes that depositing transparently conductive thin film on flexible substrate is crucial.
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Chem, Pi-Yu, and 陳碧玉. "The conducting homogeneity of polyaniline and ITO films: AFM-CITS studies." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/81375031898502851400.
Full textAbstract:
碩士國立中央大學
化學研究所
91
Abstract The current image tunneling spectroscopy (CITS) has been used to measure the scanning tunneling spectroscopy (STS) of the sample surface, in which the surface conductivity can be illustrated. The surface treatment and modification of ITO anode have a large impact on the performance of PLED devices. ITO was cleaned with various methods. The cleaned ITO was then treated with a monolayer of organic silane via molecular self-adsorption. On top of cleaned or silane modified ITO, a layer of polyaniline film was deposited via in-situ polymerization/deposition. CITS was used to study the conducting homogeneity of ITO and polyaniline films. It was found that the conductivity of ITO films is very homogeneous. Their surface morphology and CITS image have a point-to-point corresponding. Nevertheless, the topographies of polyaniline films are different from their CITS images. The morphology of all polyaniline films studied revealed a spheric aggregation. On the other hand, the CITS images of polyaniline films showed conducting islands with various sizes of conducting domain.