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Relevant bibliographies by topics / IR photodetector / Dissertations / Theses

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Dissertations / Theses on the topic 'IR photodetector'

Author: Grafiati

Published: 1 February 2025

Last updated: 25 July 2025

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1

Cheak, Seck Fai. "Detecting near-UV and near-IR wavelengths with the FOVEON Image Sensor /." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FCheak.pdf.

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Thesis (M.S. in Combat Systems Technology)--Naval Postgraduate School, Dec. 2004.<br>Thesis Advisor(s): Gamani Karunasiri, Richard C. Olsen. Includes bibliographical references (p. 57-60). Also available online.

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2

Desgué, Eva. "Control of structural and electrical properties of bilayer to multilayer PtSe₂ films grown by molecular beam epitaxy for high-performance optoelectronic devices." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP170.

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Le PtSe₂ est un matériau 2D de la famille des dichalcogénures de métaux de transition (TMDs) qui présente des propriétés intrinsèques exceptionnelles : mobilité des porteurs de charge élevée (200 - 450 cm².(V.s)⁻¹), gap électronique ajustable en fonction du nombre de monocouches (MLs), absorption optique large bande et excellente stabilité à l'air. Ces propriétés sont idéales pour des applications (opto)électroniques. Cependant, la croissance de PtSe₂ de haute qualité cristalline sur un substrat à bas coût et isolant reste un enjeu majeur. Ici, la synthèse de PtSe₂ bicouche à multicouche (<

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3

Dawei, Jiang. "Electrical and optical characterization of InP nanowire-based photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-25733.

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This thesis deals with electrical and optical characterization of p+i–n+ nanowire-based photodetectors/solar cells. I have investigated their I-V performance and found that all of them exhibit a clear rectifying behavior with an ideality factor around 2.2 at 300K. used Fourier transform infrared spectroscopy to extract their optical properties. From the spectrally resolved photocurrent data, I conclude that the main photocurrent is generated in the i-segment of the nanowire (NW) p-i-n junctions, with negligible contribution from the substrate. I also used a C-V technique to investigate t

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4

Liu, Yining. "Design of an Optical Response System for Characterization of Hyperoped Silicon Photodetectors." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1461944376.

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5

Giovane, Laura Marie. "Strain-balanced silicon-germanium materials for near IR photodetection in silicon-based optical interconnects." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9583.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.<br>Includes bibliographical references (leaves 129-132).<br>Strain-balanced silicon-germanium superlattices grown on high quality compositionally graded buffers, or virtual substrates. make a complete range of alloy composition and biaxial strain combinations accessible. This structure is a unique way to achieve high quantum efficiency near IR photodetection for silicon-based optical interconnects. The growth of the strain-balanced superlattices by molecular beam epitaxy (MBE) and ultra hig

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6

Ahmed, Rizwan, and Shahid Abbas. "Electrical and Optical Characteristics of InP Nanowires based p-i-n Photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-13915.

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Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical signal. Photodetectors are classified based on their different structure, fabrication technology, applications and different sensitivity. Infrared photodetectors are widely used in many applications such as night vision, thermal cameras, remote temperature sensing, and medical diagnosis etc. All detectors have material inside that is sensitive to incoming light. It will absorb the photons and, if the incoming photons have enough energy, electrons will be excited to higher energy levels and if thes

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7

Yew, Jone-Ye, and 游宗毅. "Fabrication of Amorphous Silicon Germanium Near IR Photodetector." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/36750805553945830401.

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碩士<br>國立清華大學<br>電機工程學系<br>85<br>The purpose of this thesis is to fabricate a-SiGe:H IR detectors. Two mainefforts of this thesis are (1)fabrication of a-SiGe:H films. (2)NIPIN IR photodetectors. In order to reduce the influence of the particulate formation in thepreparation of a-SiGe:H films, high hydrogen dilution ratio which is about93 % and pulse RF power is used for a-SiGe:H films. The particulate formationis decreased by using pulse RF power. The device structure of a-SiGe:H photo

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8

Lin, Chung-Yi, and 林忠億. "Investigation of ZnSe/Si Metal-Semiconductor-Metal (MSM) Photodetector Using IR Furnace Chemical Vapor Deposition." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/29772847564015235938.

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碩士<br>國立海洋大學<br>電機工程學系<br>87<br>-Abstract- In this experiment, we use the low cost IR-CVD system and two-step growth method to grow ZnSe epilayers on oriented-(111) Si substrate for reducing the lattice mismatch problem between ZnSe and Si. Because of the existence of the lattice constant mismatch within approximately 4.1% between the ZnSe and Si that can introduce high density of threading dislocations, stacking faults and defects resulting in the interface states. We use the optimum ZnSe epilayers on Si to fabricate the devices of MSM photodetector. Further, we have sho

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9

Huang, Shao-Chang, and 黃紹璋. "A study of Amorphous Silicon Germanium High Speed IR Photodetector fabricated on crystal Si Substrate." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/70649342380411960816.

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碩士<br>國立成功大學<br>電機工程研究所<br>84<br>In this thesis , the amorphous silicon-germanium / crystal silicon heterojunction high-speed IR photodetector was studied in detail. In preparing the samples , the amorphous silicon- germanium alloys were grown on the crystal silicon subtrate by plasma enhanced chemical vapor deposition (PECVD). Both advantages of the low resistivity and high mobility characteristics of crystal silicon and the low temperature preparation processing,high

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10

Tsai, Chung-Shih, and 蔡崇世. "A Study of the High Optical Gain Amorphous Silicon Germanium Alloy IR Photodetector with Bragg Reflectors." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/83112415266720618917.

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碩士<br>國立成功大學<br>電機工程研究所<br>83<br>In this thesis, an high optical gain amorphous silicon germanium alloy IR photodetector with Bragg reflectors has been developed by plasma enhanced chemical vaporphase deposition( PECVD). By using Bragg reflectors ,we can reabsorb the unabsorbed light to increase absorption efficiency , thus we can increase the optical gain. In addition, the Bragg reflector structure will serve as a barrier to block the outdiffusion of defects from the substrate into the act

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11

Balakrishnam, Raju J. "Design, Fabrication And Characterization Of Corrugated-Quantum Well Infrared Photodetector." Thesis, 2005. https://etd.iisc.ac.in/handle/2005/1426.

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Balakrishnam, Raju J. "Design, Fabrication And Characterization Of Corrugated-Quantum Well Infrared Photodetector." Thesis, 2005. http://etd.iisc.ernet.in/handle/2005/1426.

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13

Cious, Guan-Lin, and 邱冠霖. "Near-IR Photomultiplication in Organic Photodetectors." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/32819611412353473026.

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碩士<br>國立交通大學<br>光電工程系所<br>97<br>Through Doping of Near-IR(NIR) materials in organic Photodiodes, the absorption of the device was extended into long wavelength region. Because the NIR dye can trap the charges easily, the trapped carrier will induce an electric field and decrease the injection barrier of the apposite charges. Therefore, high photocurrent multiplication was achieve at higher reverse bias. The turn on voltage of the photomultiplication did not depend on the light intensity. However, the degree of phase separation and the thickness of active layer significantly affected the turn o

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14

張恒毅. "Investigation of ZnSe Heteroepitaxy Metal-Semiconductor-Metal Photodetectors with Indium-Tin-Oxide electrode Using IR Furnace Chemical Vapor Deposition." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/96798449019654517284.

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碩士<br>國立海洋大學<br>電機工程學系<br>88<br>Abstract In this thesis, the low cost IR furnace chemical vapor deposition system is used to obtain the ZnSe epilayer. The analysis of the ZnSe epilayers quality including the crystallographic properties was demonstrated by XRD, the analysis of the surface morphologies and the thickness was observed by SEM, the composition depth profiles was measured by SIMS and the discussion of optical characteristics was determined by PL measurement. Planar metal-semiconductor-metal (MSM) photodetector have been noted recently, however, the photocurrent

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15

(10701084), James Lawrence Stewart. "Designing Optical Metastructures for IR Sensing, Discernment and Signature Reduction." Thesis, 2021.

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<div>Increasing flexibility of light manipulation is vital for various domains including both biomedical and military applications, where a lack of photon control could become critical. The efforts conducted and projected within this proposal are focused on three major areas: semi-continuous planar thin film photomodification for infrared (IR) filtering, nanosphere core-shell structures for obscurance, and all-dielectric sub-wavelength focal lenses for advanced IR sensing.Through a collaborative effort with the Army Research Office, we advanced the tunability of planar plasmonic filters w

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