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Journal articles on the topic 'Ion implantation'

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Author: Grafiati

Published: 4 June 2021

Last updated: 1 August 2024

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1

Mochizuki, Kazuhiro, Ryoji Kosugi, Yoshiyuki Yonezawa, and Hajime Okumura. "Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region." Materials Science Forum 963 (July 2019): 394–98. http://dx.doi.org/10.4028/www.scientific.net/msf.963.394.

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Ranges for Al implantations into 4H-SiC (0001) were compared between channeled-ion implantation (without using a MeV implanter) and non-channeled ion implantation using an ion energy E0 in the Bethe–Bloch region (IIBB). Since the latter (i.e., projected range of 7.5 μm at E0 = 26 MeV) was larger than the former (i.e., maximum channeled range of 3.4 μm at E0 = 900 keV), IIBB was concluded to be suitable to minimize the repeat count of epitaxial growth/ion implantation steps used in the fabrication of 4H-SiC superjunction power devices.

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2

Bai, Minyu, Yulong Zhao, Binbin Jiao, Lingjian Zhu, Guodong Zhang, and Lei Wang. "Research on ion implantation in MEMS device fabrication by theory, simulation and experiments." International Journal of Modern Physics B 32, no. 14 (June 5, 2018): 1850170. http://dx.doi.org/10.1142/s0217979218501709.

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Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.

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3

Picraux, S. T., and P. S. Peercy. "Ion Implantation." MRS Bulletin 12, no. 2 (March 1987): 22–30. http://dx.doi.org/10.1557/s0883769400068378.

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4

IWAKI, Masaya. "Ion Implantation." Journal of the Japan Society of Colour Material 68, no. 8 (1995): 514–23. http://dx.doi.org/10.4011/shikizai1937.68.514.

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5

Armour, DG. "Ion implantation." Vacuum 37, no. 5-6 (January 1987): 423–27. http://dx.doi.org/10.1016/0042-207x(87)90326-5.

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6

Weyer, G. "Ion implantation." Hyperfine Interactions 27, no. 1-4 (March 1986): 249–62. http://dx.doi.org/10.1007/bf02354759.

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7

Andersen, Hans Henrik. "Ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 42, no. 3 (July 1989): 402. http://dx.doi.org/10.1016/0168-583x(89)90455-2.

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8

Langouche, G. "Ion implantation." Hyperfine Interactions 68, no. 1-4 (April 1992): 95–106. http://dx.doi.org/10.1007/bf02396455.

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9

Dearnaley, G. "IOn implantation part II: Ion implantation in nonelectronic materials." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 24-25 (April 1987): 506–11. http://dx.doi.org/10.1016/0168-583x(87)90696-3.

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10

Shao, Jun Peng, Hui Tang, and Yan Qin Zhang. "Study on Computer Emulation of PTFE’s Wearability Improvement by Al³⁺ Ion Implantation." Materials Science Forum 575-578 (April 2008): 843–47. http://dx.doi.org/10.4028/www.scientific.net/msf.575-578.843.

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The surface material of Elastic-metal pads(EMP) is PTFE which has poor wearability . Ion implantation can improve the wearability of EMP surface .This paper investigated the wearability improvement of the EMP’s surface by Al2O3/PTFE film which generated by ion implantation. The accelerating voltage of the ion implantation apparatus is 40KV and the ion emitting energy of aluminum is 20KeV. The dosages of three kinds of Al3+ ion beams in the study are 1×1015 ions/cm2, 5×1015 ions/cm2 and 1×1016 ions/cm2 respectively. The aluminum ion’s density is 10uA/cm2. The vacuum pressure of the ion implantation is 3×10-3Pa. The experimental specimens modified by Al3+ ion implantation were tested by ESCA, XRD, AFM/FFM and nanometer probe , which got the chemical bond, phase structure and friction coefficient of the film. According to the experimental results, the mathematical model was built using the Fesow Geometric Model and the Halind Rang Theory. The computer simulation was made in which SRIM simulator program was employed. The ion implantation’s energy for the simulation is 20keV and the material density of PTFE is 2.56g/cm³. In addition, the dose is 5×1015 ions/cm², the time interval is 230 minutes and the velocity of Al3+ ion implantation is 2.15-2.20×1013 ions/minute. Finally the simulation curves of particle distribution, energy distribution and impairment etc. were plotted and discussed.

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11

Lam, Nghi Q., and Gary K. Leaf. "Mechanisms and kinetics of ion implantation." Journal of Materials Research 1, no. 2 (April 1986): 251–67. http://dx.doi.org/10.1557/jmr.1986.0251.

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The evolution of the implant distribution during ion implantation at elevated temperatures has been theoretically studied using a comprehensive kinetic model. In the model foreign atoms, implanted into both interstitial and substitutional sites of the host lattice, could interact with implantation-induced point defects and with extended sinks such as the bombarded surface. The synergistic effects of preferential sputtering, radiation-enhanced diffusion, and radiation-induced segregation, as well as the influence of nonuniform defect production, were taken into account. The bombarded surface was allowed to move in either direction, − x or + x, depending on ion energy, i.e., on the competition between the rates of ion deposition and sputtering. The moving surface was accounted for by means of a mathematical technique of immobilizing the boundary. The ion implantation process was cast into a system of five coupled partial differential equations, which could be solved numerically using a suitable technique. Sample calculations were performed for two systems: Si+ and Al+ implantations into Ni. It has been known from previous studies that in irradiated Ni, Si atoms segregate in the same direction as the defect fluxes, whereas Al solutes migrate in the opposite direction. Thus the effects of different segregation mechanisms, as well as the influence of target temperature, ion energy, and implantation rate on the evolution of implant concentrations in time and space, could be examined with the present model.

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12

García-Fernández, J., S. B. Kjeldby, P. D. Nguyen, O. B. Karlsen, L. Vines, and Ø. Prytz. "Formation of γ-Ga₂O₃ by ion implantation: Polymorphic phase transformation of β-Ga₂O₃." Applied Physics Letters 121, no. 19 (November 7, 2022): 191601. http://dx.doi.org/10.1063/5.0120103.

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Ion implantation induced phase transformation and the crystal structure of a series of ion implanted β-Ga2O3 samples were studied using electron diffraction, high resolution transmission electron microscopy, and scanning transmission electron microscopy. In contrast to previous reports suggesting an ion implantation induced transformation to the orthorhombic κ-phase, we show that for 28Si+, 58Ni+, and stoichiometric 69Ga+/16O+-implantations, the monoclinic β-phase transforms to the cubic γ-phase. The γ-phase was confirmed for implantations over a range of fluences from 1014 to 1016 ions/cm2, indicating that the transformation is a general phenomenon for β-Ga2O3 due to strain accumulation and/or γ-Ga2O3 being energetically preferred over highly defective β-Ga2O3.

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13

Adler, R. J., and J. Abercrombie. "Conformal ion implantation." Surface and Coatings Technology 156, no. 1-3 (July 2002): 258–61. http://dx.doi.org/10.1016/s0257-8972(02)00104-4.

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14

Bøttiger, J. "Ion implantation 1988." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 36, no. 1 (January 1989): 98. http://dx.doi.org/10.1016/0168-583x(89)90066-9.

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15

Cavell, John. "Ion implantation software." Vacuum 39, no. 6 (January 1989): 590. http://dx.doi.org/10.1016/0042-207x(89)90643-x.

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16

Zhou, Xin, Xing Chen, Tong-cun Mao, Xiang Li, Xiao-hua Shi, Dong-li Fan, and Yi-ming Zhang. "Carbon Ion Implantation." Plastic and Reconstructive Surgery 137, no. 4 (April 2016): 690e—699e. http://dx.doi.org/10.1097/prs.0000000000002022.

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17

Honcharov, V., V. Zazhigalov, and M. Honcharova. "Aluminium Ion Implantation in Stainless Steel." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 45, no. 6 (February 1, 2024): 757–71. http://dx.doi.org/10.15407/mfint.45.06.0757.

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18

Titze, Michael, Jonathan D. Poplawsky, Silvan Kretschmer, Arkady V. Krasheninnikov, Barney L. Doyle, Edward S. Bielejec, Gerhard Hobler, and Alex Belianinov. "Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics." Micromachines 14, no. 10 (September 30, 2023): 1884. http://dx.doi.org/10.3390/mi14101884.

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Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here, we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low-energy ion implants can be achieved by either lowering the column voltage or decelerating ions using bias while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found, which is due to lattice enrichment with high-stopping-power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way towards much lower implantation energies while maintaining high spatial resolution.

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19

Hallén, Anders, Margareta K. Linnarsson, and Lasse Vines. "Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation." Materials Science Forum 963 (July 2019): 375–81. http://dx.doi.org/10.4028/www.scientific.net/msf.963.375.

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The effect of lattice thermal vibrations on the channeling of 100 keV Al ions in 4H-SiC is investigated. By implanting at room temperature in the direction, the depth distribution of the incident ions is shown to be about 7 times deeper than for random implantations. At higher implantation temperatures, the channeling is reduced by the lattice vibrations and, for instance, at 600 °C implantation the distribution is about 3-4 times deeper than for a RT random implantation. The results are of technological interest for further development of implantation technology for 4H-SiC device manufacturing.

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20

KASAHARA, Haruo, Hiroshi SAWARAGI, and Ryuso AIHARA. "Ion implantation with focused ion beams." Journal of the Japan Society for Precision Engineering 56, no. 7 (1990): 1181–84. http://dx.doi.org/10.2493/jjspe.56.1181.

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21

Sugitani, Michiro. "Ion implantation technology and ion sources." Review of Scientific Instruments 85, no. 2 (February 2014): 02C315. http://dx.doi.org/10.1063/1.4854155.

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22

Holmes, A. J. T., and G. Proudfoot. "Negative-ion sources for ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 55, no. 1-4 (April 1991): 323–27. http://dx.doi.org/10.1016/0168-583x(91)96186-o.

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23

Sakudo, N. "Microwave ion source for ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 21, no. 1-4 (January 1987): 168–77. http://dx.doi.org/10.1016/0168-583x(87)90819-6.

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24

Kenny, M. J., L. S. Wielunski, J. Tendys, and G. A. Collins. "A comparison of plasma immersion ion implantation with conventional ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (June 1993): 262–66. http://dx.doi.org/10.1016/0168-583x(93)96120-2.

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25

MIREAULT, N., and G. G. ROSS. "MODIFICATION OF WETTING PROPERTIES OF PMMA BY IMMERSION PLASMA ION IMPLANTATION." Surface Review and Letters 15, no. 04 (August 2008): 345–54. http://dx.doi.org/10.1142/s0218625x08011470.

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Advancing and receding contact angles below 5° have been obtained on PMMA surfaces with the implantation of argon and oxygen ions. The ion implantations were performed by means of the Immersion Plasma Ion Implantation (IPII) technique, a hybrid between ion beams and immersion plasmas. Characterization of treated PMMA surfaces by means of XPS and its combination with chemical derivatization (CD-XPS) have revealed the depletion of oxygen and the creation of dangling bonds, together with the formation of new chemical functions such as –OOH , –COOH and C = C . These observations provide a good explanation for the strong increase of the wetting properties of the PMMA surfaces.

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26

White, C. W. "Ion Beam Processing." MRS Bulletin 12, no. 2 (March 1987): 18–21. http://dx.doi.org/10.1557/s0883769400068366.

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Ion beams are used extensively in materials research for processing and synthesis as well as for characterization. In the last few years, enormous advances have been made regarding the use of ion beams for processing or synthesis, and this issue of the MRS BULLETIN will review some of those advances. (The use of ion beams for materials characterization will be the subject of a future issue of the BULLETIN.) The areas covered in this issue are ion implantation, ion beam mixing, ion-assisted deposition, and direct ion beam deposition. For each area, recognized experts in the field prepared overview articles that should be very interesting to those who are not active in the field, and that should be useful to other experts in the field.The first large-scale use of ion beams for materials modification took place in the semiconductor industry more than 20 years ago when ion implantation began to be used to dope the near-surface region of silicon with Group III or Group V dopants. The use of ion implantation in the semiconductor industry has undergone explosive growth, and today almost all electronic devices are fabricated utilizing at lest one ion implantation step.In addition to the semiconductor area, research is being carried out using ion implantation in a multitude of other areas which include ceramics, metals and alloys, insulators, etc. The article on “Ion Implantation” by S.T. Picraux and P.S. Peercy provides an excellent overview of current research activities involving ion implantation of a wide spectrum of materials.

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27

Bertoncello, R., S. Gross, F. Trivillin, E. Cattaruzza, G. Mattei, F. Caccavale, P. Mazzoldi, G. Battaglin, and S. Daolio. "Mutually reactive elements in a glass host matrix: Ag and S ion implantation in silica." Journal of Materials Research 14, no. 6 (June 1999): 2449–57. http://dx.doi.org/10.1557/jmr.1999.0329.

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Ag, S, Ag + S, and S + Ag single and double ion implantations in silica glass were performed at room temperature. The implantation energies were chosen in order to get a projected range of 40 nm. The fluences were 2 × 1016 S+ cm−2 and 5 × 1016 Ag+ cm−2. Silver interacts weakly with the host silica matrix and forms essentially metallic clusters; this weak interaction between Ag and SiO2 induces formation of silver silicate rather than silver oxide. Double ion implantations of silver and sulfur lead to chemical interaction between the two species that is critically influenced by the implantation sequence. In particular, in the Ag + S sample silver and sulfur atoms react to form crystalline core (Ag)–shell (Ag2S) nanoclusters.

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28

Ningaraju, Vivek, Antonius Fran Yannu Pramudyo, Gene Sheu, Erry Dwi Kurniawan, Shao Ming Yang, Jia Wei Ma, and Subramanyaj. "Simulation of P-Type Doping Profile Prediction Using Different Ion Implantation and Diffusion Model." Applied Mechanics and Materials 764-765 (May 2015): 530–34. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.530.

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Ion implantation and subsequent diffusion are very essential stages in today's advanced VLSI (Very Large Scale Integration) semiconductor devices processing. High precision calibration of device simulation is a key procedure to ensure simulation is accurate. For this purpose, accurate prediction of the doping profiles resulted from ion implantation and diffusion will be studied using a few models of ion implantation and diffusion. We collected data of Boron as P-type ion implantation profiles using TCAD simulation software with different ion implantation models and diffusion models then compared with Secondary Ion Mass Spectrometry (SIMS) data of ion implantation profile database as experimental data. Models plays very important role in this calibration. In this paper, calibrations have done using Monte Carlo and Taurus analytical as implantation model and pd.full, pd.fermi and pd.5stream as diffusion model. All calibration simulations were simulated using Synopsys TCAD Simulation. The experimental results shown by using Monte Carlo ion implantation model with pd.5str diffusion model is close to SIMS profile.

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29

Linnarsson, Margareta K., Anders Hallén, and Lasse Vines. "Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC." Materials Science Forum 1004 (July 2020): 689–97. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.689.

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Channeling phenomena during ion implantation have been studied for 50 keV 11B, 100 keV 27Al and 240 keV 71Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range are expected for the used energies while the channeling tails are shown to be substantially different, for example, channeled 71Ga ions may travel 5 times as deep as 11B. Ion implantation has been performed both at room temperature (RT) and 400 °C, where channeling effects are reduced for the 400 °C implantation compared to that of the RT due to thermal vibrations of lattice atoms. The temperature effect is pronounced for 71Ga but nearly negligible for 11B at the used energies. The channeling phenomena are explained by three-dimensional Monte Carlo simulations. For standard implantations, i.e. 4° off the c-direction, it is found that a direction in-between the [000-1] and the <11-2-3> crystal channels, results in deep channeling tails where the implanted ions follow the [000-1] and the <11-2-3> directions.

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30

Iwaki, Masaya. "Ion implantation into metals." Journal of the Japan Society of Powder and Powder Metallurgy 35, no. 3 (1988): 163–66. http://dx.doi.org/10.2497/jjspm.35.163.

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31

SAITO, Kazuo. "Fundamentals of ion implantation." Jitsumu Hyomen Gijutsu 34, no. 10 (1987): 368–78. http://dx.doi.org/10.4139/sfj1970.34.368.

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32

Mantese, Joseph V., Ian G. Brown, Nathan W. Cheung, and George A. Collins. "Plasma-Immersion Ion Implantation." MRS Bulletin 21, no. 8 (August 1996): 52–56. http://dx.doi.org/10.1557/s0883769400035727.

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Plasma-immersion ion implantation (PIII) is an emerging technology for the surface engineering of semiconductors, metals, and dielectrics. It is inherently a batch-processable technique that lends itself to the implantation of large numbers of parts simultaneously. It thus offers the possibility of introducing ion implantation into manufacturing processes that have not traditionally been feasible using conventional implantation.In PIII the part to be treated is placed in a vacuum chamber in which is generated a plasma containing the ions of the species to be implanted. The plasma based implantation system does not use the extraction and acceleration methods of conventional mass-analyzing implanters. Instead the sample is (usually) repetitively pulsed at high negative voltages (in the 2–300 kV range) to implant the surface with a flux of energetic plasma ions as shown in Figure 1. When the negative bias is applied to a conducting object immersed in a plasma, electrons are repelled from the surrounding region toward the walls of the vacuum chamber, which is usually held at ground potential. Almost all the applied voltage difference occurs across this region, which is generally known as a sheath or cathode fall region. Ions are accelerated across the sheath, producing an ion flux to the entire exposed surface of the work-piece. Because the plasma surrounds the sample and because the ions are accelerated normal to the sample surfaces, implantation occurs over all surfaces, thereby eliminating the need for elaborate target manipulation or masking systems commonly required for beam line implanters. Ions implanted in the work-piece must be replaced by an incoming flow of ions at the sheath boundary, or the sheath will continue to expand into the surrounding plasma.Plasma densities are kept relatively low, usually between 108 and 1011 ions per cm3. Ions must be replenished near the workpiece by either diffusion or ionization since the workpiece (in effect) behaves like an ion pump. Gaseous discharges with thermionic, radio-frequency, or microwave ionization sources have been successfully used.Surface-enhanced materials are obtained through PIII by producing chemical and microstructural changes that lead to altered electrical properties (e.g., semiconductor applications), and low-friction and superhard surfaces that are wear- and corrosion-resistant. When PIII is limited to gaseous implant species, these unique surface properties are obtained primarily through the formation of nitrides, oxides, and carbides. When applied to semiconductor applications PIII can be used to form amorphous and electrically doped layers. Plasma-immersion ion implantation can also be combined with plasma-deposition techniques to produce coatings such as diamondlike carbon (DLC) having enhanced properties. This latter variation of PIII can be operated in a high ionenergy regime so as to do ion mixing and to form highly adherent films, and in an ion-beam-assisted-deposition (IBAD)-like ion-energy regime to produce good film morphology and structure.

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33

Ligeon, E., and A. Hamoudi. "Ion Implantation in Multilayers." Solid State Phenomena 30-31 (January 1992): 467–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.30-31.467.

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34

SAITO, Kazuo. "Ion implantation into metals." Journal of the Metal Finishing Society of Japan 39, no. 10 (1988): 563–70. http://dx.doi.org/10.4139/sfj1950.39.563.

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35

HIOKI, Tatsumi. "Ion implantation to ceramics." Journal of the Metal Finishing Society of Japan 39, no. 10 (1988): 586–91. http://dx.doi.org/10.4139/sfj1950.39.586.

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36

Rieu, J., A. Pichat, L. M. Rabbe, and Marc Robelet. "Ion Implantation for Biomaterials." Materials Science Forum 102-104 (January 1992): 505–16. http://dx.doi.org/10.4028/www.scientific.net/msf.102-104.505.

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37

Sharma, B. L. "Ion Implantation into GaAs." Defence Science Journal 39, no. 4 (October 1, 1989): 353–65. http://dx.doi.org/10.14429/dsj.39.4785.

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38

Thomae, Rainer W. "Plasma-immersion ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 139, no. 1-4 (April 1998): 37–42. http://dx.doi.org/10.1016/s0168-583x(97)00952-x.

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39

Strazzulla, G., G. A. Baratta, M. E. Palumbo, and M. A. Satorre. "Ion implantation in ices." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 166-167 (May 2000): 13–18. http://dx.doi.org/10.1016/s0168-583x(99)00640-0.

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40

Pearton, S. J., J. M. Poate, F. Sette, J. M. Gibson, D. C. Jacobson, and J. S. Williams. "Ion implantation in GaAs." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (January 1987): 369–80. http://dx.doi.org/10.1016/s0168-583x(87)80074-5.

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41

Kucheyev, S. O., J. S. Williams, and S. J. Pearton. "Ion implantation into GaN." Materials Science and Engineering: R: Reports 33, no. 2-3 (May 2001): 51–108. http://dx.doi.org/10.1016/s0927-796x(01)00028-6.

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42

FENG, H., Z. YU, and P. CHU. "Ion implantation of organisms." Materials Science and Engineering: R: Reports 54, no. 3-4 (November 15, 2006): 49–120. http://dx.doi.org/10.1016/j.mser.2006.11.001.

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43

Ryssel, Heiner. "Ion implantation in semiconductors." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 42, no. 1 (May 1989): 149. http://dx.doi.org/10.1016/0168-583x(89)90023-2.

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44

Shichang, Zou, and Liu Xianghuai. "Ion implantation in China." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 37-38 (February 1989): 672–75. http://dx.doi.org/10.1016/0168-583x(89)90272-3.

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45

Kastner, J., and L. Palmetshofer. "Ion Implantation in Fullerenes." Fullerene Science and Technology 4, no. 2 (March 1996): 179–200. http://dx.doi.org/10.1080/10641229608001546.

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46

Fink, D., J. Krauser, D. Nagengast, M. Behar, J. Kaschny, P. Grande, V. Hnatowicz, J. Vacik, and L. Palmetshofer. "Ion Implantation into Fullerene." Fullerene Science and Technology 4, no. 3 (May 1996): 535–52. http://dx.doi.org/10.1080/10641229608001569.

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47

\vSvor\vcík, Václav, Vladimír Rybka, Karel Volka, Vladimír Hnatowicz, Ji\vrí Kvítek, and Pavel Seidl. "Ion Implantation into Polypropylene." Japanese Journal of Applied Physics 31, Part 2, No. 3A (March 1, 1992): L287—L290. http://dx.doi.org/10.1143/jjap.31.l287.

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48

Townsend, P. D. "Ion implantation—an introduction." Contemporary Physics 27, no. 3 (May 1986): 241–56. http://dx.doi.org/10.1080/00107518608211010.

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Švorčik, V., V. Rybka, R. Endršt, V. Hnatowicz, and J. Kvitek. "Ion Implantation into Polyethylene." Journal of The Electrochemical Society 140, no. 2 (February 1, 1993): 542–44. http://dx.doi.org/10.1149/1.2221084.

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Williams, J. S. "Ion implantation of semiconductors." Materials Science and Engineering: A 253, no. 1-2 (September 1998): 8–15. http://dx.doi.org/10.1016/s0921-5093(98)00705-9.

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