Relevant bibliographies by topics / Ion implantation

Academic literature on the topic 'Ion implantation'

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Published: 4 June 2021
Last updated: 1 August 2024

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Journal articles on the topic "Ion implantation"

1

Mochizuki, Kazuhiro, Ryoji Kosugi, Yoshiyuki Yonezawa, and Hajime Okumura. "Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region." Materials Science Forum 963 (July 2019): 394–98. http://dx.doi.org/10.4028/www.scientific.net/msf.963.394.

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Ranges for Al implantations into 4H-SiC (0001) were compared between channeled-ion implantation (without using a MeV implanter) and non-channeled ion implantation using an ion energy E0 in the Bethe–Bloch region (IIBB). Since the latter (i.e., projected range of 7.5 μm at E0 = 26 MeV) was larger than the former (i.e., maximum channeled range of 3.4 μm at E0 = 900 keV), IIBB was concluded to be suitable to minimize the repeat count of epitaxial growth/ion implantation steps used in the fabrication of 4H-SiC superjunction power devices.
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Bai, Minyu, Yulong Zhao, Binbin Jiao, Lingjian Zhu, Guodong Zhang, and Lei Wang. "Research on ion implantation in MEMS device fabrication by theory, simulation and experiments." International Journal of Modern Physics B 32, no. 14 (June 5, 2018): 1850170. http://dx.doi.org/10.1142/s0217979218501709.

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Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements’ ratio. These factors all together contribute to ions’ behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.
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Picraux, S. T., and P. S. Peercy. "Ion Implantation." MRS Bulletin 12, no. 2 (March 1987): 22–30. http://dx.doi.org/10.1557/s0883769400068378.

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IWAKI, Masaya. "Ion Implantation." Journal of the Japan Society of Colour Material 68, no. 8 (1995): 514–23. http://dx.doi.org/10.4011/shikizai1937.68.514.

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Armour, DG. "Ion implantation." Vacuum 37, no. 5-6 (January 1987): 423–27. http://dx.doi.org/10.1016/0042-207x(87)90326-5.

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Weyer, G. "Ion implantation." Hyperfine Interactions 27, no. 1-4 (March 1986): 249–62. http://dx.doi.org/10.1007/bf02354759.

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Andersen, Hans Henrik. "Ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 42, no. 3 (July 1989): 402. http://dx.doi.org/10.1016/0168-583x(89)90455-2.

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Langouche, G. "Ion implantation." Hyperfine Interactions 68, no. 1-4 (April 1992): 95–106. http://dx.doi.org/10.1007/bf02396455.

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Dearnaley, G. "IOn implantation part II: Ion implantation in nonelectronic materials." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 24-25 (April 1987): 506–11. http://dx.doi.org/10.1016/0168-583x(87)90696-3.

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Shao, Jun Peng, Hui Tang, and Yan Qin Zhang. "Study on Computer Emulation of PTFE’s Wearability Improvement by Al3+ Ion Implantation." Materials Science Forum 575-578 (April 2008): 843–47. http://dx.doi.org/10.4028/www.scientific.net/msf.575-578.843.

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The surface material of Elastic-metal pads(EMP) is PTFE which has poor wearability . Ion implantation can improve the wearability of EMP surface .This paper investigated the wearability improvement of the EMP’s surface by Al2O3/PTFE film which generated by ion implantation. The accelerating voltage of the ion implantation apparatus is 40KV and the ion emitting energy of aluminum is 20KeV. The dosages of three kinds of Al3+ ion beams in the study are 1×1015 ions/cm2, 5×1015 ions/cm2 and 1×1016 ions/cm2 respectively. The aluminum ion’s density is 10uA/cm2. The vacuum pressure of the ion implantation is 3×10-3Pa. The experimental specimens modified by Al3+ ion implantation were tested by ESCA, XRD, AFM/FFM and nanometer probe , which got the chemical bond, phase structure and friction coefficient of the film. According to the experimental results, the mathematical model was built using the Fesow Geometric Model and the Halind Rang Theory. The computer simulation was made in which SRIM simulator program was employed. The ion implantation’s energy for the simulation is 20keV and the material density of PTFE is 2.56g/cm³. In addition, the dose is 5×1015 ions/cm², the time interval is 230 minutes and the velocity of Al3+ ion implantation is 2.15-2.20×1013 ions/minute. Finally the simulation curves of particle distribution, energy distribution and impairment etc. were plotted and discussed.
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Dissertations / Theses on the topic "Ion implantation"

1

Sharples, Graham Robert. "Low energy ion implantation." Thesis, University of Salford, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.327921.

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Seyedhosseini, S. H. "Ion implantation of seeds." Thesis, University of Salford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358378.

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Bozkurt, Bilge. "Dynamic Ion Behavior In Plasma Source Ion Implantation." Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/12607025/index.pdf.

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The aim of this work is to analytically treat the dynamic ion behavior during the evolution of the ion matrix sheath, considering the industrial application plasma source ion implantation for both planar and cylindrical targets, and then to de-velop a code that simulates this dynamic ion behavior numerically. If the sepa-ration between the electrodes in a discharge tube is small, upon the application of a large potential between the electrodes, an ion matrix sheath is formed, which fills the whole inter-electrode space. After a short time, the ion matrix sheath starts moving towards the cathode and disappears there. Two regions are formed as the matrix sheath evolves. The potential profiles of these two regions are derived and the ion flux on the cathode is estimated. Then, by us-ing the finite-differences method, the problem is simulated numerically. It has been seen that the results of both analytical calculations and numerical simula-tions are in a good agreement.
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Allan, Scott Young. "Ion Energy Measurements in Plasma Immersion Ion Implantation." Thesis, The University of Sydney, 2009. http://hdl.handle.net/2123/5338.

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This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (PIII). PIII is a surface modification technique where an object is placed in a plasma and pulse biased with large negative voltages. The energy distribution of implanted ions is important in determining the extent of surface modifications. IED measurements were made during PIII using a pulse biased retarding field energy analyser (RFEA) in a capacitive RF plasma. Experimental results were compared with those obtained from a two dimensional numerical simulation to help explain the origins of features in the IEDs. Time resolved IED measurements were made during PIII of metal and insulator materials and investigated the effects of the use of a metal mesh over the surface and the effects of insulator surface charging. When the pulse was applied to the RFEA, the ion flux rapidly increased above the pulse-off value and then slowly decreased during the pulse. The ion density during the pulse decreased below values measured when no pulse was applied to the RFEA. This indicates that the depletion of ions by the pulsed RFEA is greater than the generation of ions in the plasma. IEDs measured during pulse biasing showed a peak close to the maximum sheath potential energy and a spread of ions with energies between zero and the maximum ion energy. Simulations showed that the peak is produced by ions from the sheath edge directly above the RFEA inlet and that the spread of ions is produced by ions which collide in the sheath and/or arrive at the RFEA with trajectories not perpendicular to the RFEA front surface. The RFEA discriminates ions based only on the component of their velocity perpendicular to the RFEA front surface. To minimise the effects of surface charging during PIII of an insulator, a metal mesh can be placed over the insulator and pulse biased together with the object. Measurements were made with metal mesh cylinders fixed to the metal RFEA front surface. The use of a mesh gave a larger ion flux compared to the use of no mesh. The larger ion flux is attributed to the larger plasma-sheath surface area around the mesh. The measured IEDs showed a low, medium and high energy peak. Simulation results show that the high energy peak is produced by ions from the sheath above the mesh top. The low energy peak is produced by ions trapped by the space charge potential hump which forms inside the mesh. The medium energy peak is produced by ions from the sheath above the mesh corners. Simulations showed that the IED is dependent on measurement position under the mesh. To investigate the effects of insulator surface charging during PIII, IED measurements were made through an orifice cut into a Mylar insulator on the RFEA front surface. With no mesh, during the pulse, an increasing number of lower energy ions were measured. Simulation results show that this is due to the increase in the curvature of the sheath over the orifice region as the insulator potential increases due to surface charging. The surface charging observed at the insulator would reduce the average energy of ions implanted into the insulator during the pulse. Compared to the case with no mesh, the use of a mesh increases the total ion flux and the ion flux during the early stages of the pulse but does not eliminate surface charging. During the pulse, compared to the no mesh case, a larger number of lower energy ions are measured. Simulation results show that this is caused by the potential in the mesh region which affects the trajectories of ions from the sheaths above the mesh top and corners and results in more ions being measured with trajectories less than ninety degrees to the RFEA front surface.
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Allan, Scott Young. "Ion Energy Measurements in Plasma Immersion Ion Implantation." The School of Physics. The Faculty of Science, 2009. http://hdl.handle.net/2123/5338.

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Doctor of Philosophy (PhD)
This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (PIII). PIII is a surface modification technique where an object is placed in a plasma and pulse biased with large negative voltages. The energy distribution of implanted ions is important in determining the extent of surface modifications. IED measurements were made during PIII using a pulse biased retarding field energy analyser (RFEA) in a capacitive RF plasma. Experimental results were compared with those obtained from a two dimensional numerical simulation to help explain the origins of features in the IEDs. Time resolved IED measurements were made during PIII of metal and insulator materials and investigated the effects of the use of a metal mesh over the surface and the effects of insulator surface charging. When the pulse was applied to the RFEA, the ion flux rapidly increased above the pulse-off value and then slowly decreased during the pulse. The ion density during the pulse decreased below values measured when no pulse was applied to the RFEA. This indicates that the depletion of ions by the pulsed RFEA is greater than the generation of ions in the plasma. IEDs measured during pulse biasing showed a peak close to the maximum sheath potential energy and a spread of ions with energies between zero and the maximum ion energy. Simulations showed that the peak is produced by ions from the sheath edge directly above the RFEA inlet and that the spread of ions is produced by ions which collide in the sheath and/or arrive at the RFEA with trajectories not perpendicular to the RFEA front surface. The RFEA discriminates ions based only on the component of their velocity perpendicular to the RFEA front surface. To minimise the effects of surface charging during PIII of an insulator, a metal mesh can be placed over the insulator and pulse biased together with the object. Measurements were made with metal mesh cylinders fixed to the metal RFEA front surface. The use of a mesh gave a larger ion flux compared to the use of no mesh. The larger ion flux is attributed to the larger plasma-sheath surface area around the mesh. The measured IEDs showed a low, medium and high energy peak. Simulation results show that the high energy peak is produced by ions from the sheath above the mesh top. The low energy peak is produced by ions trapped by the space charge potential hump which forms inside the mesh. The medium energy peak is produced by ions from the sheath above the mesh corners. Simulations showed that the IED is dependent on measurement position under the mesh. To investigate the effects of insulator surface charging during PIII, IED measurements were made through an orifice cut into a Mylar insulator on the RFEA front surface. With no mesh, during the pulse, an increasing number of lower energy ions were measured. Simulation results show that this is due to the increase in the curvature of the sheath over the orifice region as the insulator potential increases due to surface charging. The surface charging observed at the insulator would reduce the average energy of ions implanted into the insulator during the pulse. Compared to the case with no mesh, the use of a mesh increases the total ion flux and the ion flux during the early stages of the pulse but does not eliminate surface charging. During the pulse, compared to the no mesh case, a larger number of lower energy ions are measured. Simulation results show that this is caused by the potential in the mesh region which affects the trajectories of ions from the sheaths above the mesh top and corners and results in more ions being measured with trajectories less than ninety degrees to the RFEA front surface.
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Chen, Shou-Mian. "Plasma immersion ion implantation of silicon." Thesis, University of Surrey, 1997. http://epubs.surrey.ac.uk/842893/.

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Plasma Immersion Ion Implantation has several unique advantages over conventional implantation, such as low cost, large area capability, non-line-of-sight features and high dose rate implantation. However, it is still far from use in routine production because of problems such as the ability to control the ion depth profile in targets, the ion dose and contamination. In this thesis, a PIII system has been systematically calibrated, and a computer simulation code for PIII has been developed in order to understand more clearly the physics of the PIII process and to optimise the experimental conditions. In the second part of this thesis, a new application of PIII has been explored, where the PIII technique has been used as a high dose-rate implant treatment to form amorphous silicon nitride/oxide films on both crystalline and amorphous silicon substrates. The electrical properties of these films have been characterized. It shows that low dose nitrogen/oxygen implantation leads to the modification of Schottky barrier heights or the introduction of charged defects in the materials. As the ion dose is increased, alloying effects take over, forming silicon nitride/oxide alloys. The a-SiNx:H films synthesized via PIII have electrical characteristics similar to those grown by PECVD, but a-SiOx:H has different electrical properties from a-SiNx:H.
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Skelland, Neil David. "High temperature ion implantation into insulators." Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359076.

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Barnett, Anne. "Quantum well intermixing by ion implantation." View electronic text, 2002. http://eprints.anu.edu.au/documents/disk0/00/00/07/62/index.html.

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Thesis (BSc. (Hons))--Australian National University, 2002.
Available via the Australian National University Library Electronic Pre and Post Print Repository. Title from title screen (viewed Mar. 27, 2003). "A thesis submitted in part fulfillment of the requirements for the degree of Bachelor of Science (Honours), The Australian National University" "November 2002" Includes bibliographical references.
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Hunt, Eden Meyer. "The implantation and annealing effects of yttrium implantation into alumina." Thesis, Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/19447.

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Gallen, Niall Anthony. "Ion implantation waveguide formation in transition metal ion doped insulators." Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310665.

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Books on the topic "Ion implantation"

1

Ryssel, Heiner. Ion implantation. Chichester: Wiley, 1986.

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Seyedhosseini, S. H. Ion implantation of seeds. Salford: University of Salford, 1992.

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Sharples, Graham Robert. Low energy ion implantation. Salford: University of Salford, 1988.

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Townsend, P. D. Optical effects of ion implantation. Cambridge: Cambridge University Press, 1994.

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F, Ziegler J., ed. Handbook of ion implantation technology. Amsterdam: North-Holland, 1992.

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F, Ziegler J., ed. Ion implantation: Science and technology. 2nd ed. Boston: Academic Press, 1988.

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Nastasi, Michael, and James W. Mayer. Ion Implantation and Synthesis of Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/978-3-540-45298-0.

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Rimini, Emanuele. Ion Implantation: Basics to Device Fabrication. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2259-1.

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F, Burenkov A., and Amoretty S. J, eds. Tables of ion implantation spatial distributions. New York: Gordon & Breach Science Publishers, 1986.

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I, Current Michael, and Yarling C. B, eds. Materials and process characterization of ion implantation. Austin, Texas: Ion Beam Press, 1997.

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Book chapters on the topic "Ion implantation"

1

Anner, George E. "Ion Implantation." In Planar Processing Primer, 311–58. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0441-5_8.

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Rimini, E. "Ion Implantation." In Microelectronic Materials and Processes, 521–81. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-0917-5_11.

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El-Kareh, Badih. "Ion Implantation." In Fundamentals of Semiconductor Processing Technology, 353–466. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2209-6_6.

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Grob, Jean-Jacques. "Ion Implantation." In Silicon Technologies, 103–53. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118601044.ch2.

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Adams, R. L. "Ion Implantation." In Inorganic Reactions and Methods, 222–23. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145227.ch157.

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Poate, John M. "Ion Implantation." In Treatise on Heavy-Ion Science, 131–66. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4615-8103-1_4.

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Poate, J. M. "Ion Implantation." In Semiconductor Silicon, 84–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_6.

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Usami, Yasutsugu. "Ion Implantation." In Ultraclean Surface Processing of Silicon Wafers, 384–97. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-662-03535-1_28.

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Fair, Richard B. "Ion Implantation." In Inorganic Reactions and Methods, 111–12. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145333.ch73.

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Langouche, G., and Y. Yoshida. "Ion Implantation." In Mössbauer Spectroscopy, 267–303. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-32220-4_6.

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Conference papers on the topic "Ion implantation"

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Zhao, W. J., Z. Q. Zhao, X. T. Ren, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, and Yevgeniy V. Kondratenko. "Metal Ion Sources for Ion Beam Implantation." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033630.

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"Ion Implantation Technology." In Proceedings of the 2002 14th International Conference on Ion Implantation Technology. IEEE, 2002. http://dx.doi.org/10.1109/iit.2002.1278880.

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Tanaka, Kohei, Sei Umisedo, Kenji Miyabayashi, Hideki Fujita, Toshiaki Kinoyama, Nariaki Hamamoto, Takatoshi Yamashita, and Masayasu Tanjyo. "Nissin Ion Equipment Indirectly Heated Cathode Ion." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401546.

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Nagayama, Tsutomu, Nariaki Hamamoto, Sei Umisedo, Masayasu Tanjyo, and Takayuki Aoyama. "Implantation characteristics by boron cluster ion implantation." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401491.

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Karpuzov, D. S., I. V. Katardjiev, and S. S. Todorov. "Ion Implantation and Ion Beam Equipment." In International Conference on Ion Implantation and Ion Beam Equipment. WORLD SCIENTIFIC, 1991. http://dx.doi.org/10.1142/9789814539265.

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Inouchi, Yutaka, Shojiro Dohi, Masahiro Tanii, Junichi Tatemichi, Masashi Konishi, Masaaki Nukayama, Kazuhiro Nakao, et al. "Increase of Boron Ion Beam Current Extracted from a Multi-Cusp Ion Source in an Ion Doping System with Mass Separation." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033623.

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Kulevoy, T. V., G. N. Kropachev, D. N. Seleznev, P. E. Yakushin, R. P. Kuibeda, A. V. Kozlov, V. A. Koshelev, et al. "Molecular Ion Beam Transportation for Low Energy Ion Implantation." In ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548455.

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Oliveira, Rogerio M., Mario Ueda, Jose O. Rossi, and Beatriz L. D. Moreno. "Plasma Immersion Ion Implantation with Lithium Ions." In 2007 IEEE Pulsed Power Plasma Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/ppps.2007.4345866.

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Byl, O., S. Yedave, S. Sergi, J. Sweeney, S. Bishop, R. Kaim, D. Eldridge, et al. "Tungsten Transport in an Ion Source." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033635.

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Walther, S., M. P. M. Jank, A. Ebbers, H. Ryssel, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, and Yevgeniy V. Kondratenko. "Ion Implantation into Nanoparticulate Functional Layers." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033681.

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Reports on the topic "Ion implantation"

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Zinkle, S. (Ion implantation of ceramics). Office of Scientific and Technical Information (OSTI), September 1988. http://dx.doi.org/10.2172/5538066.

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Melngailis, John. Focused Ion Beam Implantation. Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada249662.

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SPIRE CORP BEDFORD MA. Ion Implantation Manufacturing Technology Project. Fort Belvoir, VA: Defense Technical Information Center, January 1987. http://dx.doi.org/10.21236/ada190487.

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Brown, Ian G. High Current Metal Ion Implantation. Fort Belvoir, VA: Defense Technical Information Center, April 1990. http://dx.doi.org/10.21236/ada223098.

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Jones, K. S. Ion implantation of boron in germanium. Office of Scientific and Technical Information (OSTI), May 1985. http://dx.doi.org/10.2172/5425716.

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Hershcovitch, Ady, and Michael Furey. Highly Stripped Ion Sources for MeV Ion Implantation. Office of Scientific and Technical Information (OSTI), June 2009. http://dx.doi.org/10.2172/990451.

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Barton, B., and T. Wittberg. Ion implantation of two titanium alloys. Office of Scientific and Technical Information (OSTI), August 1989. http://dx.doi.org/10.2172/5841131.

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Brown, I. G., J. E. Galvin, and K. M. Yu. High dose uranium ion implantation into silicon. Office of Scientific and Technical Information (OSTI), May 1987. http://dx.doi.org/10.2172/6159599.

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Diener, M. D., J. M. Alford, and S. Mirzadeh. Production of Endohedral Fullerenes by Ion Implantation. Office of Scientific and Technical Information (OSTI), May 2007. http://dx.doi.org/10.2172/940291.

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McHargue, C. J. Surface modification of sapphire by ion implantation. Office of Scientific and Technical Information (OSTI), November 1998. http://dx.doi.org/10.2172/677104.

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