Relevant bibliographies by topics / Ion doped insulators

Academic literature on the topic 'Ion doped insulators'

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Published: 4 June 2021
Last updated: 30 January 2023

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Journal articles on the topic "Ion doped insulators"

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Mizuno, Tomohisa, Kohki Murakawa, Kazuma Yoshimizu, Takashi Aoki, and Toshiyuki Sameshima. "Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers." Japanese Journal of Applied Physics 61, SC (February 9, 2022): SC1014. http://dx.doi.org/10.35848/1347-4065/ac3dc9.

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Abstract We experimentally studied the influence of both impurity density and dangling-bond density on PL emissions from group-IV-semiconductor quantum-dots (IV-QDs) of Si and SiC fabricated by hot-ion implantation technique, to improve the PL intensity (I PL) from IV-QDs embedded in two types of insulators of quartz-glass (QZ) with low impurity density and thermal-oxide (OX) layers. First, we verified the I PL reduction in the IV-QDs in QZ. However, we demonstrated the I PL enhancement of IV-QDs in doped QZ, which is attributable to multiple-level emission owing to acceptor and donor ion implantations into QZ. Secondly, we confirmed the large I PL enhancement of IV-QDs in QZ and OX, owing to forming-gas annealing with H2/N2 mixed gas, which are attributable to the reduction of the dangling-bond density in IV-QDs. Consequently, it is possible to improve the I PL of IV-QDs by increasing impurity density and reducing dangling-bond density.
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Dzhumanov, S. "METAL-INSULATOR TRANSITIONS IN DOPED La-BASED SUPER CONDUCTORS WITH SMALL-RADIUS DOPANTS." Eurasian Physical Technical Journal 19, no. 1 (39) (March 28, 2022): 15–19. http://dx.doi.org/10.31489/2022no1/15-19.

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n this work, we study the possibility of realizing two distinct mechanisms of metal-insulator transitions in hole-doped cuprates induced by the localization of charge carriers near the small-radius impurities and in a deformable lattice (i.e. in the absence of impurities). The purpose of this research is to determine the criteria (i.e. conditions) for the existence of the localized states of hole carriers and solve the problem of metal-insulator transitions in La-based cuprates. The advantage of La-based cuprate versus other types of cuprates is that two distinct metal-insulator transitions in La-based cuprates driven by the strong carrier-impurity-phonon and carrier-phonon interactions occur simultaneously in a wider doping range from the lightly doped to heavily doping regime. We show that at very low doping, the separate levels of hole carriers localized near impurities and in a deformable lattice are formed in the charge-transfer gap of the cuprates. As the doping level increases towards underdoped region, the energy levels of such charge carriers start to form energy bands which gradually broaden with increasing doping. We propose a new two-carrier cuprate superconductor model for studying two distinct metal-insulator transitions occurring simultaneouslyin hole-doped La-based cuprate compounds. We demonstrate that when hole carriers reside in impurity and polaron bands, these metal-insulator transitions in La-based superconductors with small-radius dopants occur accordingly in a wide doping range and relatively lower doping levels.
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Liu, Junfang, Die Su, Li Liu, Zhixiao Liu, Su Nie, Yue Zhang, Jing Xia, Huiqiu Deng, and Xianyou Wang. "Boosting the charge transfer of Li2TiSiO5 using nitrogen-doped carbon nanofibers: towards high-rate, long-life lithium-ion batteries." Nanoscale 12, no. 38 (2020): 19702–10. http://dx.doi.org/10.1039/d0nr04618c.

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The nitrogen-doped carbon encapsulated Li2TiSiO5 (the insulator for transferring electrons by first-principles calculation) nanofibers were fabricated. And unexpectedly, it can boost the charge transfer effectively.
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Balin, Katarzyna, Marcin Wojtyniak, Mateusz Weis, Maciej Zubko, Bartosz Wilk, Ruizhe Gu, Pascal Ruello, and Jacek Szade. "Europium Doping Impact on the Properties of MBE Grown Bi2Te3 Thin Film." Materials 13, no. 14 (July 13, 2020): 3111. http://dx.doi.org/10.3390/ma13143111.

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The impact of europium doping on the electronic and structural properties of the topological insulator Bi2Te3 is studied in this paper. The crystallographic structure studied by electron diffraction and transmission microscopy confirms that grown by Molecular Beam Epitaxy (MBE) system film with the Eu content of about 3% has a trigonal structure with relatively large monocrystalline grains. The X-ray photoemission spectroscopy indicates that europium in Bi2Te3 matrix remains divalent and substitutes bismuth in a Bi2Te3 matrix. An exceptional ratio of the photoemission 4d multiplet components in Eu doped film was observed. However, some spatial inhomogeneity at the nanometer scale is revealed. Firstly, local conductivity measurements indicate that the surface conductivity is inhomogeneous and is correlated with a topographic image revealing possible coexistence of conducting surface states with insulating regions. Secondly, Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) depth-profiling also shows partial chemical segregation. Such in-depth inhomogeneity has an impact on the lattice dynamics (phonon lifetime) evaluated by femtosecond spectroscopy. This unprecedented set of experimental investigations provides important insights for optimizing the process of growth of high-quality Eu-doped thin films of a Bi2Te3 topological insulator. Understanding such complex behaviors at the nanoscale level is a necessary step before considering topological insulator thin films as a component of innovative devices.
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Kao, Chyuan-Haur, Chia-Shao Liu, Shih-Ming Chan, Chih-Chen Kuo, Shang-Che Tsai, Ming-Ling Lee, and Hsiang Chen. "Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane." Membranes 11, no. 12 (December 20, 2021): 994. http://dx.doi.org/10.3390/membranes11120994.

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In this study, the effects of magnesium (Mg) doping and Ammonia (NH3) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH3 plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH3 plasma treatment could superpositionally enhance crystallization in fine nanostructures, and strengthen chemical bindings. Results indicate these material improvements increased pH sensing capability significantly. Plasma-treated Mg-doped InGaZnO pH sensing membranes show promise for future pH sensing biosensors.
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Widyaiswari, Utami, Budhy Kurniawan, Agung Imaduddin, and Isao Watanabe. "Study of Magnetoresistance Effect and Magnetic Properties of La0.67Sr0.33Mn1-xNixO3 (x = 0 and 0.2) Material Prepared by Sol-Gel Method." Materials Science Forum 966 (August 2019): 363–69. http://dx.doi.org/10.4028/www.scientific.net/msf.966.363.

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Mixed valence manganite materials have been studied due to their interesting physical properties such as their magnetoresistance (MR) effect. The change of Mn3+/Mn4+ ratio affects the possible bonds between anion and cation and their spin structure that may occur in the samples. The aim of this research is to study the change of magnetoresistance effect and magnetic properties of La0.67Sr0.33MnO3 (LSMO) by doping the Mn site with Ni ion. La0.67Sr0.33Mn1-xNixO3 samples were synthesized by using sol-gel method and characterized by using X-ray diffractometer (XRD) and Energy Dispersive X-ray spectroscopy (EDX) to confirm whether Ni has been doped successfully to the parental compound or not. XRD results showed that the samples have a single phase and Ni peak has been detected in the EDX result of Ni-doped LSMO. Resistivity and magnetic measurement showed that LSMO material has ferromagnetic metallic behavior, while x = 0.20 Ni-doped LSMO sample showed paramagnetic insulator behavior. The absolute value of the MR for un-doped sample is higher than the doped sample when the low field is applied, while under the influence of the high magnetic field, it become smaller than the doped sample.
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Reghu, M., Y. Cao, D. Moses, and A. J. Heeger. "Metal-insulator transition in polyaniline doped with surfactant counter-ion." Synthetic Metals 57, no. 2-3 (April 1993): 5020–25. http://dx.doi.org/10.1016/0379-6779(93)90856-r.

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Kasl, C., and M. J. R. Hoch. "The metal–insulator transition in trivalent-ion-doped tungsten bronzes." Journal of Physics: Condensed Matter 26, no. 6 (January 17, 2014): 065601. http://dx.doi.org/10.1088/0953-8984/26/6/065601.

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Lin, Chun, Chyuan Kao, Chan Lin, Kuan Chen, and Yun Lin. "NH3 Plasma-Treated Magnesium Doped Zinc Oxide in Biomedical Sensors with Electrolyte–Insulator–Semiconductor (EIS) Structure for Urea and Glucose Applications." Nanomaterials 10, no. 3 (March 23, 2020): 583. http://dx.doi.org/10.3390/nano10030583.

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This study compared the sensing characteristics of ZnO (ZO) treated with ammonia (NH3) plasma for 1 min, 3 min, and 6 min, under the EIS structure. The measurement results revealed that, after 3 min of NH3 plasma treatment, the Mg-doped ZnO (MZO) sensing film had a high hydrogen ion sensitivity, linearity, hysteresis, and drift rate of 53.82 mV/pH, 99.04%, 2.52 mV, and 1.75 mV/h, respectively. The sensing film was used with sodium and potassium ion solutions, and it performed satisfactorily in sensing hydrogen ions. Additionally, we investigated the biomedical sensing properties of Mg-doped ZnO (MZO) sensing film with regard to urea, creatinine, and glucose solutions and found that the Mg-doped ZnO (MZO) sensing film treated with NH3 plasma for 3 min had the best properties for sensing urea, creatinine, and glucose. Specifically, with glucose, the sensing film achieved the best linearity and sensitivity and of 97.87% and 10.73 mV/mM, respectively. The results revealed that the sensing characteristics varied with the processing environment and are useful in the developing biomedical sensing applications with different sensing elements.
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Qi, Cheng, Yaswanth Rangineni, Gary Goncher, Raj Solanki, Kurt Langworthy, and Jay Jordan. "SiGe Nanowire Field Effect Transistors." Journal of Nanoscience and Nanotechnology 8, no. 1 (January 1, 2008): 457–60. http://dx.doi.org/10.1166/jnn.2008.083.

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Si0.5Ge0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V−1s−1. Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V−1s−1.
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Dissertations / Theses on the topic "Ion doped insulators"

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Gallen, Niall Anthony. "Ion implantation waveguide formation in transition metal ion doped insulators." Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310665.

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Longdell, Jevon Joseph, and jevon longdell@anu edu au. "Quantum Information Processing in Rare Earth Ion Doped Insulators." The Australian National University. Research School of Physical Sciences and Engineering, 2004. http://thesis.anu.edu.au./public/adt-ANU20061010.105020.

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A great deal of theoretical activity has resulted from blending the fields of computer science and quantum mechanics. Out of this work has come the concept of a quantum computer, which promises to solve problems currently intractable for classical computers. This promise has, in turn, generated a large amount of effort directed toward investigating quantum computing experimentally. ¶ Quantum computing is difficult because fragile quantum superposition states of the computer’s register must be protected from the environment. This is made more difficult by the need to manipulate and measure these states. ¶ This thesis describes work that was carried out both to investigate and to demonstrate the utility of rare earth ion dopants for quantum computation. Dopants in solids are seen by many as a potential means of achieving scalable quantum computing. Rare earth ion dopants are an obvious choice for investigating such quantum computation. Long coherence times for both optical and nuclear spin transitions have been observed as well as optical manipulation of the spin states. The advantage that the scheme developed here has over nearly all of its competitors is that no complex nanofabrication is required. The advantages of avoiding nano-fabrication are two fold. Firstly, coherence times are likely to be adversely effected by the “damage” to the crystal structure that this manufacture represents. Secondly, the nano-fabrication presents a very serious difficulty in itself. ¶ Because of these advantages it was possible to perform two-qubit operations between independent qubits. This is the first time that such operations have been performed and presents a milestone in quantum computation using dopants in solids. It is only the second time two-qubit operations have been demonstrated in a solid. ¶ The experiments performed in this thesis were in two main areas: The first was the characterisation of hyperfine interactions in rare earth ion dopants; the second, simple demonstrations directly related to quantum computation. ¶ The first experiments that were carried out were to characterise the hyperfine interactions in Pr[superscript 3]+:Y[subscript 2]SiO[subscript 5]. The characterisation was the first carried out for the dopants in a site of such low symmetry. The resulting information about oscillator strengths and transition frequencies should prove indispensable when using such a system for quantum computation. It has already enabled an increase in the coherence times of nuclear spin transitions by two orders of magnitudes. ¶ The experiments directly related to the demonstration of quantum computation were all carried out using ensembles. The presence of a significant distribution of resonant frequencies, or inhomogeneous broadening, meant that many different sub-ensembles could be addressed, based on their resonant frequencies. Furthermore, the properties of the sub-ensembles could be engineered by optically pumping unwanted members to different hyperfine states away from resonance with the laser. ¶ A previously demonstrated technique for realising ensembles that could be used as single qubits was investigated and improved. Also, experiments were carried out to demonstrate the resulting ensembles’ utility as qubits. Further to this, ions from one of the ensembles were selected out, based on their interaction with the ions of another. Elementary two qubit operations were then demonstrated using these ensembles.
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Longdell, J. "Quantum Information Processing in Rare Earth Ion Doped Insulators." Phd thesis, 2003. http://hdl.handle.net/1885/47689.

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A great deal of theoretical activity has resulted from blending the fields of computer science and quantum mechanics. Out of this work has come the concept of a quantum computer, which promises to solve problems currently intractable for classical computers. This promise has, in turn, generated a large amount of effort directed toward investigating quantum computing experimentally. ¶ Quantum computing is difficult because fragile quantum superposition states of the computer’s register must be protected from the environment. This is made more difficult by the need to manipulate and measure these states. ¶ This thesis describes work that was carried out both to investigate and to demonstrate the utility of rare earth ion dopants for quantum computation. Dopants in solids are seen by many as a potential means of achieving scalable quantum computing. Rare earth ion dopants are an obvious choice for investigating such quantum computation. Long coherence times for both optical and nuclear spin transitions have been observed as well as optical manipulation of the spin states. The advantage that the scheme developed here has over nearly all of its competitors is that no complex nanofabrication is required. The advantages of avoiding nano-fabrication are two fold. Firstly, coherence times are likely to be adversely effected by the “damage” to the crystal structure that this manufacture represents. Secondly, the nano-fabrication presents a very serious difficulty in itself. ¶ ...
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Kasl, Charles. "Electric transport investigations on the trivalent-ion doped tungsten bronzes YxWO3 and LaxWO3 near the metal-insulator transition." Thesis, 2011. http://hdl.handle.net/10539/9088.

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Electric transport investigations were performed on the trivalent–ion doped tungsten bronzes YxWO3 (0.05 ≤ x ≤ 0.20) and LaxWO3 (0.05 ≤ x ≤ 0.23). The range of dopant concentrations includes the cubic phase, as well as the predicted metal–insulator transition occurring in these systems. Polycrystalline samples were prepared by solid state reaction by sintering compressed powder pellets in evacuated quartz ampoules at 1100°C for 72 hr. Characterisation of the samples included powder x–ray diffraction, diffuse reflection spectroscopy, specific heat and magnetization measurements. The results are similar to those found in other tungsten bronzes. An electrical transport station was assembled to measure the transport properties as a function of temperature (1.6 K ≤ T ≤ 300 K) and magnetic field (–1.2 T ≤ B ≤ +1.2 T). The standard four–wire method for bar samples and the van der Pauw technique for pellets were both used for dc conductivity and Hall effect measurements. The conductivity σ versus temperature T plots for a range of x values show a family of curves typical of metal–insulator transition systems and comparable to results for NaxWO3 and NaxTayW1-yO3. A change from metallic–type (dσ/dT < 0) to semiconducting–type (dσ/dT > 0) behaviour is observed as x is reduced. The metal–insulator transition is found to occur for nominal concentrations between x = 0.05 and x = 0.06 in both the YxWO3 and LaxWO3 samples. This corresponds to a critical electron concentration nC ~ 3×1021 cm–3. Room temperature Hall effect results support the fully donor model for the tungsten bronzes. The Hall concentration decreases on cooling, indicating a partial “freeze–out” of charge carriers, observed previously in cubic single–crystal NaxWO3. No evidence is found for local moment formation from magnetization and specific heat measurements at low temperatures. Magnetoresistance effects appeared at low temperatures with small resistivity changes ≲ 0.1% in 1 T fields. For lower x values the YxWO3 and LaxWO3 samples show very similar behaviour in all their properties, confirming that the donor valence and not donor type is the dominant factor in determining the properties of the tungsten bronzes.
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Books on the topic "Ion doped insulators"

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Gallen, Niall A. Ion implantation waveguide formation in transition metal ion doped insulators. 1999.

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Cao, Gang, and Lance DeLong. Physics of Spin-Orbit-Coupled Oxides. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.001.0001.

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Prior to 2010, most research on the physics and chemistry of transition metal oxides was dominated by compounds of the 3d-transition elements such as Cr, Mn, Fe, Co, Ni, and Cu. These materials exhibited novel, important phenomena that include giant magnetoresistance in manganites, as well as high-temperature superconductivity in doped La2CuO4 and related cuprates. The discovery in 1994 of an exotic superconducting state in Sr2RuO4 shifted some interest toward ruthenates. Moreover, the realization in 2008 that a novel variant of the classic Mott metal-insulator transition was at play in Sr2IrO4 provided the impetus for a burgeoning group of studies of the influence of strong spin-orbit interactions in “heavy” (4d- and 5d-) transition-element oxides. This book reviews recent experimental and theoretical evidence that the physical and structural properties of 4d- and 5d-oxides are decisively influenced by strong spin-orbit interactions that compete or collaborate with comparable Coulomb, magnetic exchange, and crystalline electric field interactions. The combined effect leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel couplings between the orbital/lattice and spin degrees of freedom, which lead to unusual types of magnetic order and other exotic phenomena, challenge current theoretical models. Of particular interest are recent investigations of iridates and ruthenates focusing on strong spin-orbit interactions that couple the lattice and spin degrees of freedom.
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Book chapters on the topic "Ion doped insulators"

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Itoh, Kohei M. "Metal-Insulator Transition in Doped Semiconductors." In Springer Proceedings in Physics, 128–31. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_54.

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Díaz Fernández, Álvaro. "Surface States in $$\delta $$-doped Topological Boundaries." In Reshaping of Dirac Cones in Topological Insulators and Graphene, 141–59. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-61555-0_5.

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Horsch, P., and W. Stephan. "One- and Two-Particle Excitations in Doped Mott-Hubbard Insulators." In Springer Series in Solid-State Sciences, 351–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84865-0_62.

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Randeria, Mohit, Rajdeep Sensarma, and Nandini Trivedi. "Projected Wavefunctions and High T c Superconductivity in Doped Mott Insulators." In Springer Series in Solid-State Sciences, 29–64. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-21831-6_2.

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Sasaki, W. "Critical Behavior Near the Metal-Insulator Transition in Doped Semiconductors." In Springer Proceedings in Physics, 10–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73554-7_2.

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Westervelt, R. M., M. J. Burns, P. F. Hopkins, A. J. Rimberg, and G. A. Thomas. "Magnetic-Field-Induced Metal-Insulator Transition in Degenerately Doped n-Type Ge." In Springer Proceedings in Physics, 33–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73554-7_6.

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Ochiai, Y. "Quantum Transport in Disordered Surfaces in Doped Silicon Near the Metal-Insulator Transition." In Springer Proceedings in Physics, 370–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-73554-7_64.

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v. Löhneysen, Hilbert. "Disorder, electron-electron interactions and the metal-insulator transition in heavily doped Si:P." In Advances in Solid State Physics, 143–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/bfb0108351.

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Verma, Prateek Kishor, and Santosh Kumar Gupta. "Virtually Doped Silicon-on-Insulator Junctionless Transistor for Reduced OFF-State Leakage Current." In Lecture Notes in Electrical Engineering, 643–56. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6840-4_53.

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Wang, Y. J., B. D. McCombe, and W. Schaff. "Isolated Impurities, Impurity Bands and the Metal-Insulator Transition in Modulation-Doped Multiple-Quantum-Well Structures in Magnetic Fields." In Localization and Confinement of Electrons in Semiconductors, 314–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84272-6_33.

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Conference papers on the topic "Ion doped insulators"

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Zhang, Wenhua, Weibin Zhang, Kimberly Turner, and Peter G. Hartwell. "SCREAM’03: A Single Mask Process for High-Q Single Crystal Silicon MEMS." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61140.

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We present a single-mask single-crystal silicon (SCS) process for the fabrication of suspended MicroElectroMechanical devices (MEMS). This is a bulk micro-machining process that uses Deep Reactive Ion Etch (DeepRIE) of a silicon-on-insulator (SOI) substrate with highly doped device layer to fabricate movable single-crystal silicon MEMS structures, which can be electrically actuated without metal deposition. The buried oxide layer is not removed afterwards and no wet process release is involved in the whole process sequence, which makes this process different from others works based on SOI wafer. Several MEMS oscillators have been made using this process. Dynamic behavior is characterized using a laser vibrometer. Quality factor is improved by more than 1 order compared to the same oscillator made using SCREAM process.
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YU, LU. "THE SPIN-CHARGE GAUGE APPROACH TO THE THEORY OF DOPED MOTT INSULATORS." In Statistical Physics, High Energy, Condensed Matter and Mathematical Physics - The Conference in Honor of C. N. Yang'S 85th Birthday. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812794185_0021.

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Gonzatti, Frederic, Frederic Milési, Vincent Delaye, Julian Duchaine, Frank Torregrosa, Hasnaa Etienne, Karim Yckache, et al. "Plasma Implantation Technology for Upcoming Ultra Shallow and Highly Doped Fully Depleted Silicon On Insulator Transistors." In ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548380.

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Reports on the topic "Ion doped insulators"

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Pease, Douglas M. Study of Phase Separation as Related to the Metal-Insulator for Transition in Chromium Doped V{sub 2}O{sub 3}. Office of Scientific and Technical Information (OSTI), June 2013. http://dx.doi.org/10.2172/1083455.

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Kwon, C., Q. X. Jia, Y. Fan, M. F. Hundley, D. W. Reagor, M. E. Hawley, and D. E. Peterson. Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO{sub 3} insulator. Office of Scientific and Technical Information (OSTI), July 1998. http://dx.doi.org/10.2172/661685.

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