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Journal articles on the topic 'Ion Beam Lithography'

Author: Grafiati
Published: 4 June 2021
Last updated: 31 January 2023

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1

GAMO, Kenji. "Ion beam lithography." Journal of the Japan Society for Precision Engineering 53, no. 11 (1987): 1677–81. http://dx.doi.org/10.2493/jjspe.53.1677.

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2

Tsarik, K. A. "Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation." Proceedings of Universities. Electronics 26, no. 5 (2021): 353–62. http://dx.doi.org/10.24151/1561-5405-2021-26-5-353-362.

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The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its toluene dilution was established. It was shown that electron-sensitive resist thinning down to 30 μm based on α-chloro-methacrylate with α-methylstyrene allows the 500-nm gapped metal contacts formation over a span of 30 μm. Silicon nanostructures within metallic nanoscale gap on dielectric substrate have been obtained. The geometry of obtained nanostructures was studied by optical, electron, ion, and probe microscopy. It has been established that it is possible to not use additional alignment keys when nanoscale field-effect transistors are created based on silicon nanostructures.
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3

WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (June 2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.

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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.
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4

Voznyuk G. V., Grigorenko I. N., Mitrofanov M. I., Nikolaev V. V., and Evtikhiev V. P. "Subwave textured surfaces for the radiation coupling from the waveguide." Technical Physics Letters 48, no. 3 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.03.52896.19103.

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The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy. Keywords: ion-beam etching, metasurface, textured surface, lithography, surface coupling of radiation.
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5

Huh, J. S. "Focused ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 1 (January 1991): 173. http://dx.doi.org/10.1116/1.585282.

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6

Löschner, H. "Projection ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 6 (November 1993): 2409. http://dx.doi.org/10.1116/1.586996.

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7

Gamo, Kenji. "Focused ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65, no. 1-4 (March 1992): 40–49. http://dx.doi.org/10.1016/0168-583x(92)95011-f.

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8

Melngailis, John. "Focused ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (January 1993): 1271–80. http://dx.doi.org/10.1016/0168-583x(93)90781-z.

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9

Joshi-Imre, Alexandra, and Sven Bauerdick. "Direct-Write Ion Beam Lithography." Journal of Nanotechnology 2014 (2014): 1–26. http://dx.doi.org/10.1155/2014/170415.

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Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIB-based manufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating three-dimensional patterns and shaping objects by milling and deposition is probably the most recognized feature of ion beam lithography (IBL) and micromachining. However, there exist several other techniques, such as ion implantation- and ion damage-based patterning and surface functionalization types of processes that have emerged as valuable additions to the nanofabrication toolkit and that are less widely known. While fabrication throughput, in general, is arguably low due to the serial nature of the direct-writing process, speed is not necessarily a problem in these IBL applications that work with small ion doses. Here we provide a comprehensive review of ion beam lithography in general and a practical guide to the individual IBL techniques developed to date. Special attention is given to applications in nanofabrication.
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10

Miller, Paul A. "Image-projection ion-beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 5 (September 1989): 1053. http://dx.doi.org/10.1116/1.584594.

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11

Lee, Y., R. A. Gough, T. J. King, Q. Ji, K. N. Leung, R. A. McGill, V. V. Ngo, M. D. Williams, and N. Zahir. "Maskless ion beam lithography system." Microelectronic Engineering 46, no. 1-4 (May 1999): 469–72. http://dx.doi.org/10.1016/s0167-9317(99)00042-8.

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12

Ruchhoeft, Paul, J. C. Wolfe, and Robert Bass. "Ion beam aperture-array lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 6 (2001): 2529. http://dx.doi.org/10.1116/1.1420578.

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13

Winston, Donald, Vitor R. Manfrinato, Samuel M. Nicaise, Lin Lee Cheong, Huigao Duan, David Ferranti, Jeff Marshman, et al. "Neon Ion Beam Lithography (NIBL)." Nano Letters 11, no. 10 (October 12, 2011): 4343–47. http://dx.doi.org/10.1021/nl202447n.

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14

Mair, G. L. R., and T. Mulvey. "Ion beam lithography (Ion sources and columns)." Microelectronic Engineering 3, no. 1-4 (December 1985): 133–46. http://dx.doi.org/10.1016/0167-9317(85)90020-6.

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15

Puttaraksa, Nitipon, Mari Napari, Orapin Chienthavorn, Rattanaporn Norarat, Timo Sajavaara, Mikko Laitinen, Somsorn Singkarat, and Harry J. Whitlow. "Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography." Advanced Materials Research 254 (May 2011): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amr.254.132.

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The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
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16

Rashid, Sabaa, Jaspreet Walia, Howard Northfield, Choloong Hahn, Anthony Olivieri, Antonio Calà Lesina, Fabio Variola, Arnaud Weck, Lora Ramunno, and Pierre Berini. "Helium ion beam lithography and liftoff." Nano Futures 5, no. 2 (June 1, 2021): 025003. http://dx.doi.org/10.1088/2399-1984/abfd98.

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17

Adesida, I. "Ion beam lithography at nanometer dimensions." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 1 (January 1985): 45. http://dx.doi.org/10.1116/1.583288.

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18

Ngo, V. V., W. Barletta, R. Gough, Y. Lee, K. N. Leung, N. Zahir, and D. Patterson. "Maskless micro-ion-beam reduction lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 6 (1999): 2783. http://dx.doi.org/10.1116/1.591065.

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19

Springham, S. V., T. Osipowicz, J. L. Sanchez, L. H. Gan, and F. Watt. "Micromachining using deep ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 130, no. 1-4 (July 1997): 155–59. http://dx.doi.org/10.1016/s0168-583x(97)00275-9.

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20

Schrempel, F., Y. S. Kim, and W. Witthuhn. "Deep ion beam lithography in PMMA." Applied Surface Science 189, no. 1-2 (April 2002): 102–12. http://dx.doi.org/10.1016/s0169-4332(02)00009-0.

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21

Joshi-Imre, A., L. Ocola, and J. Klingfus. "Direct-write Focused Ion Beam Lithography." Microscopy and Microanalysis 16, S2 (July 2010): 194–95. http://dx.doi.org/10.1017/s1431927610062872.

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22

Alves, A., P. Reichart, R. Siegele, P. N. Johnston, and D. N. Jamieson. "Ion beam lithography using single ions." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 249, no. 1-2 (August 2006): 730–33. http://dx.doi.org/10.1016/j.nimb.2006.03.128.

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23

Weiser, Martin. "Ion beam figuring for lithography optics." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 8-9 (May 2009): 1390–93. http://dx.doi.org/10.1016/j.nimb.2009.01.051.

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24

Matsui, Shinji, Yoshikatsu Kojima, and Yukinori Ochiai. "High‐resolution focused ion beam lithography." Applied Physics Letters 53, no. 10 (September 5, 1988): 868–70. http://dx.doi.org/10.1063/1.100098.

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25

Kim, Young Suk, Wan Hong, Hyung Joo Woo, Han Woo Choi, Gi Dong Kim, Jin Ho Lee, and Samkeun Lee. "Ion Beam Lithography Using Membrane Masks." Japanese Journal of Applied Physics 41, Part 1, No. 6B (June 30, 2002): 4141–45. http://dx.doi.org/10.1143/jjap.41.4141.

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26

Matsui, Shinji. "High-resolution focused ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 5 (September 1991): 2622. http://dx.doi.org/10.1116/1.585660.

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27

Breese, M. B. H., G. W. Grime, F. Watt, and D. Williams. "MeV ion beam lithography of PMMA." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 77, no. 1-4 (May 1993): 169–74. http://dx.doi.org/10.1016/0168-583x(93)95540-l.

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28

Brown, W. L. "Recent progress in ion beam lithography." Microelectronic Engineering 9, no. 1-4 (May 1989): 269–76. http://dx.doi.org/10.1016/0167-9317(89)90063-4.

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29

Matsui, Shinji, Yoshikatsu Kojima, Yukinori Ochiai, Toshiyuki Honda, and Katsumi Suzuki. "High-resolution focused ion beam lithography." Microelectronic Engineering 11, no. 1-4 (April 1990): 427–30. http://dx.doi.org/10.1016/0167-9317(90)90144-i.

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30

Messina, Troy C., Bernadeta R. Srijanto, Charles Patrick Collier, Ivan I. Kravchenko, and Christopher I. Richards. "Gold Ion Beam Milled Gold Zero-Mode Waveguides." Nanomaterials 12, no. 10 (May 21, 2022): 1755. http://dx.doi.org/10.3390/nano12101755.

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Zero-mode waveguides (ZMWs) are widely used in single molecule fluorescence microscopy for their enhancement of emitted light and the ability to study samples at physiological concentrations. ZMWs are typically produced using photo or electron beam lithography. We report a new method of ZMW production using focused ion beam (FIB) milling with gold ions. We demonstrate that ion-milled gold ZMWs with 200 nm apertures exhibit similar plasmon-enhanced fluorescence seen with ZMWs fabricated with traditional techniques such as electron beam lithography.
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31

Matsui, Shinji. "Ion species dependence of focused-ion-beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 4 (July 1987): 853. http://dx.doi.org/10.1116/1.583679.

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32

van Kan, J. A., J. L. Sanchez, B. Xu, T. Osipowicz, and F. Watt. "Micromachining using focused high energy ion beams: Deep Ion Beam Lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148, no. 1-4 (January 1999): 1085–89. http://dx.doi.org/10.1016/s0168-583x(98)90667-x.

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33

Momota, S., Y. Nojiri, Y. Hamagawa, K. Hamaguchi, J. Taniguchi, and H. Ohno. "Application of highly charged Ar ion beams to ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 242, no. 1-2 (January 2006): 247–49. http://dx.doi.org/10.1016/j.nimb.2005.08.030.

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34

Langford, Richard M., Philipp M. Nellen, Jacques Gierak, and Yongqi Fu. "Focused Ion Beam Micro- and Nanoengineering." MRS Bulletin 32, no. 5 (May 2007): 417–23. http://dx.doi.org/10.1557/mrs2007.65.

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AbstractThis article discusses applications of focused ion beam micro- and nanofabrication. Emphasis is placed on illustrating the versatility of focused ion beam and dual-platform systems and how they complement conventional processing techniques. The article is divided into four parts: maskless milling, ion beam lithography, ion implantation, and techniques such as in situ micromanipulation.
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35

Momota, Sadao, Shingo Iwamitsu, Shougo Goto, Yoichi Nojiri, Jun Taniguchi, Iwao Miyamoto, Hirohisa Ohno, Noboru Morita, and Noritaka Kawasegi. "Ion-beam lithography by use of highly charged Ar-ion beam." Review of Scientific Instruments 77, no. 3 (March 2006): 03C111. http://dx.doi.org/10.1063/1.2165269.

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36

Iwamitsu, Shingo, Mamoru Nagao, Shahjada A. Pahlovy, Kohei Nishimura, Masaki Kashihara, Sadao Momota, Yoichi Nojiri, et al. "Ion beam lithography by using highly charged ion beam of Ar." Colloids and Surfaces A: Physicochemical and Engineering Aspects 313-314 (February 2008): 407–10. http://dx.doi.org/10.1016/j.colsurfa.2007.04.121.

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37

Вознюк, Г. В., И. Н. Григоренко, М. И. Митрофанов, В. В. Николаев, and В. П. Евтихиев. "Субволновые текстурированные поверхности для вывода излучения из волновода." Письма в журнал технической физики 48, no. 6 (2022): 51. http://dx.doi.org/10.21883/pjtf.2022.06.52214.19103.

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A technology for creating textured surfaces by focused-beam ion-beam etching on GaAs (100) substrates is demonstrated. The possibility of flexible control of the shape and profile of the formed submicron elements of textured media is shown. It will make possible to create textured surfaces of almost any complexity for the implementation of surface output of radiation from a waveguide. Original lithographic templates were developed and three-dimensional lithography was carried out. The control of the formed lithographic patterns was carried out by the methods of optical, electron and atomic force microscopy.
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38

Tejeda, R. O., E. G. Lovell, and R. L. Engelstad. "In-Plane Gravity Loading of a Circular Membrane." Journal of Applied Mechanics 67, no. 4 (May 5, 2000): 837–39. http://dx.doi.org/10.1115/1.1308581.

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This paper develops the displacement field for a circular membrane which is statically loaded by gravity acting in its plane. Coupled to the displacements are the stress and strain distributions. The solution is applicable to the modeling of next generation lithographic masks, ion-beam projection lithography masks in particular. [S0021-8936(00)00803-5]
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39

Sharma, Ekta, Reena Rathi, Jaya Misharwal, Bhavya Sinhmar, Suman Kumari, Jasvir Dalal, and Anand Kumar. "Evolution in Lithography Techniques: Microlithography to Nanolithography." Nanomaterials 12, no. 16 (August 11, 2022): 2754. http://dx.doi.org/10.3390/nano12162754.

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In this era, electronic devices such as mobile phones, computers, laptops, sensors, and many more have become a necessity in healthcare, for a pleasant lifestyle, and for carrying out tasks quickly and easily. Different types of temperature sensors, biosensors, photosensors, etc., have been developed to meet the necessities of people. All these devices have chips inside them fabricated using diodes, transistors, logic gates, and ICs. The patterning of the substrate which is used for the further development of these devices is done with the help of a technique known as lithography. In the present work, we have carried out a review on different types of lithographic techniques such as optical lithography, extreme ultraviolet lithography, electron beam lithography, X-ray lithography, and ion beam lithography. The evolution of these techniques with time and their application in device fabrication are discussed. The different exposure tools developed in the past decade to enhance the resolution of these devices are also discussed. Chemically amplified and non-chemically amplified resists with their bonding and thickness are discussed. Mask and maskless lithography techniques are discussed along with their merits and demerits. Device fabrication at micro and nano scale has been discussed. Advancements that can be made to improve the performance of these techniques are also suggested.
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40

PEGORARO, F., S. ATZENI, M. BORGHESI, S. BULANOV, T. ESIRKEPOV, J. HONRUBIA, Y. KATO, et al. "Production of ion beams in high-power laser–plasma interactions and their applications." Laser and Particle Beams 22, no. 1 (March 2004): 19–24. http://dx.doi.org/10.1017/s0263034604221048.

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Energetic ion beams are produced during the interaction of ultrahigh-intensity, short laser pulses with plasmas. These laser-produced ion beams have important applications ranging from the fast ignition of thermonuclear targets to proton imaging, deep proton lithography, medical physics, and injectors for conventional accelerators. Although the basic physical mechanisms of ion beam generation in the plasma produced by the laser pulse interaction with the target are common to all these applications, each application requires a specific optimization of the ion beam properties, that is, an appropriate choice of the target design and of the laser pulse intensity, shape, and duration.
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41

Wasson, J. R. "Ion absorbing stencil mask coatings for ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15, no. 6 (November 1997): 2214. http://dx.doi.org/10.1116/1.589616.

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42

LeFebvre, Jay C., and Shane A. Cybart. "Large-Scale Focused Helium Ion Beam Lithography." IEEE Transactions on Applied Superconductivity 31, no. 5 (August 2021): 1–4. http://dx.doi.org/10.1109/tasc.2021.3057324.

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43

Milgram, A. "A bilevel resist for ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 3 (May 1985): 879. http://dx.doi.org/10.1116/1.583074.

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44

Choi, Yeonho, Soongweon Hong, and Luke P. Lee. "Shadow Overlap Ion-beam Lithography for Nanoarchitectures." Nano Letters 9, no. 11 (November 11, 2009): 3726–31. http://dx.doi.org/10.1021/nl901911p.

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45

Sanabia, J. E., A. Nadzeyka, S. Bauerdick, L. Peto, and F. Nouvertné. "Focused Ion Beam Lithography of Nanophotonic Structures." Microscopy and Microanalysis 18, S2 (July 2012): 612–13. http://dx.doi.org/10.1017/s1431927612004916.

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46

Fisher, A., R. Tejeda, M. Sprague, R. Engelstad, and E. Lovell. "Mechanical modeling of ion beam lithography masks." Microelectronic Engineering 41-42 (March 1998): 245–48. http://dx.doi.org/10.1016/s0167-9317(98)00056-2.

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47

Ocala, LE, and A. Imre. "Large area patterning using ion-beam lithography." Microscopy and Microanalysis 14, S2 (August 2008): 986–87. http://dx.doi.org/10.1017/s1431927608089046.

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48

Lee, Y., R. A. Gough, W. B. Kunkel, K. N. Leung, J. Vujic, M. D. Williams, D. Wutte, and N. Zahir. "Multicusp sources for ion beam projection lithography." Review of Scientific Instruments 69, no. 2 (February 1998): 877–79. http://dx.doi.org/10.1063/1.1148469.

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49

Leung, K. N. "Multicusp sources for ion beam lithography applications." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13, no. 6 (November 1995): 2600. http://dx.doi.org/10.1116/1.588032.

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50

Ohta, Tsuneaki, Toshihiko Kanayama, and Masanori Komuro. "Focused ion beam lithography using Al2O3 resist." Microelectronic Engineering 6, no. 1-4 (December 1987): 447–52. http://dx.doi.org/10.1016/0167-9317(87)90072-4.

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