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Relevant bibliographies by topics / Ion Beam Lithography

Academic literature on the topic 'Ion Beam Lithography'

Author: Grafiati

Published: 4 June 2021

Last updated: 31 January 2023

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Journal articles on the topic "Ion Beam Lithography"

1

GAMO, Kenji. "Ion beam lithography." Journal of the Japan Society for Precision Engineering 53, no. 11 (1987): 1677–81. http://dx.doi.org/10.2493/jjspe.53.1677.

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Tsarik, K. A. "Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation." Proceedings of Universities. Electronics 26, no. 5 (2021): 353–62. http://dx.doi.org/10.24151/1561-5405-2021-26-5-353-362.

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The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its toluene dilution was established. It was shown that electron-sensitive resist thinning down to 30 μm based on α-chloro-methacrylate with α-methylstyrene allows the 500-nm gapped metal contacts formation over a span of 30 μm. Silicon nanostructures within metallic nanoscale gap on dielectric substrate have been obtained. The geometry of obtained nanostructures was studied by optical, electron, ion, and probe microscopy. It has been established that it is possible to not use additional alignment keys when nanoscale field-effect transistors are created based on silicon nanostructures.

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WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (June 2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.

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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

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Voznyuk G. V., Grigorenko I. N., Mitrofanov M. I., Nikolaev V. V., and Evtikhiev V. P. "Subwave textured surfaces for the radiation coupling from the waveguide." Technical Physics Letters 48, no. 3 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.03.52896.19103.

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The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy. Keywords: ion-beam etching, metasurface, textured surface, lithography, surface coupling of radiation.

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Huh, J. S. "Focused ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 1 (January 1991): 173. http://dx.doi.org/10.1116/1.585282.

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Löschner, H. "Projection ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 6 (November 1993): 2409. http://dx.doi.org/10.1116/1.586996.

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7

Gamo, Kenji. "Focused ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65, no. 1-4 (March 1992): 40–49. http://dx.doi.org/10.1016/0168-583x(92)95011-f.

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Melngailis, John. "Focused ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (January 1993): 1271–80. http://dx.doi.org/10.1016/0168-583x(93)90781-z.

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9

Joshi-Imre, Alexandra, and Sven Bauerdick. "Direct-Write Ion Beam Lithography." Journal of Nanotechnology 2014 (2014): 1–26. http://dx.doi.org/10.1155/2014/170415.

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Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIB-based manufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating three-dimensional patterns and shaping objects by milling and deposition is probably the most recognized feature of ion beam lithography (IBL) and micromachining. However, there exist several other techniques, such as ion implantation- and ion damage-based patterning and surface functionalization types of processes that have emerged as valuable additions to the nanofabrication toolkit and that are less widely known. While fabrication throughput, in general, is arguably low due to the serial nature of the direct-writing process, speed is not necessarily a problem in these IBL applications that work with small ion doses. Here we provide a comprehensive review of ion beam lithography in general and a practical guide to the individual IBL techniques developed to date. Special attention is given to applications in nanofabrication.

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Miller, Paul A. "Image-projection ion-beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 5 (September 1989): 1053. http://dx.doi.org/10.1116/1.584594.

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Dissertations / Theses on the topic "Ion Beam Lithography"

1

Heard, P. J. "Applications of scanning ion beam lithography." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372653.

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Alves, Andrew David Charles, and aalves@unimelb edu au. "Characterisation of Single Ion Tracks for use in Ion Beam Lithography." RMIT University. Applied Sciences, 2008. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080414.135656.

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To investigate the ultimate resolution in ion beam lithography (IBL) the resist material poly(methyl methacrylate) PMMA has been modified by single ion impacts. The latent damage tracks have been etched prior to imaging and characterisation. The interest in IBL comes from a unique advantage over more traditional electron beam or optical lithography. An ion with energy of the order of 1 MeV per nucleon evenly deposits its energy over a long range in a straight latent damage path. This gives IBL the ability to create high aspect ratio structures with a resolution in the order of 10 nm. Precise ion counting into a spin coated PMMA film on top of an active substrate enabled control over the exact fluence delivered to the PMMA from homogenously irradiated areas down to separated single ion tracks. Using the homogenous areas it was possible to macroscopically measure the sensitivity of the PMMA as a function of the developing parameters. Separated single ion tracks wer e created in the PMMA using 8 MeV F, 71 MeV Cu and 88 MeV I ions. These ion tracks were etched to create voids in the PMMA film. For characterisation the tracks were imaged primarily with atomic force microscopy (AFM) and also with scanning electron microscopy (SEM). The series of studies presented here show that the sensitivity of the resist-developer combination can be tailored to allow the etching of specific single ion tracks. With the ability to etch only the damage track, and not the bulk material, one may experimentally characterise the damage track of any chosen ion. This offers the scientific community a useful tool in the study and fabrication of etched ion tracks. Finally work has been conducted to allow the precise locating of an ion beam using a nanoscale mask and piezoelectrically driven scanning stage. This method of beam locating has been trailed in conjunction with single ion detection in an effort to test the practical limits of ion beam lithography in the single ion realm.

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Puretz, Joseph. "A theoretical and experimental study of liquid metal ion sources and their application to focused ion beam technology /." Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,182.

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Yasaka, Anto. "Feasibility study of spatial-phase-locked focused-ion-beam lithography." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/32663.

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O'Neill, Robin W. "Characterisation of micron sized ferromagnetic structures fabricated by focussed ion beam and electron beam lithography." Thesis, University of Glasgow, 2007. http://theses.gla.ac.uk/6256/.

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Traditionally electron beam lithography (EBL) has been used to fabricate micron and sub-micron sized devices, such as Γ and Τ gates for metal-semiconductor devices for study within the semiconductor industry. EBL is also used for the fabrication of ferromagnetic elements for use as components in magnetic random access memory (MRAM) and read/write heads in hard disk drives (HDD). MRAM is being investigated as a direct replacement to standard semiconductor RAM as it has lower power consumption and is a non-volatile memory solution, although the areal density, at present, is not as great. Smaller read/write heads are necessary for HDD as recent advances now allow for perpendicular magnetisation (as opposed to parallel magnetisation) of films and increase the areal density to 100 Gb/inch2, four times the current value. In this thesis, the physical and magnetic properties of such micron-sized devices that have been fabricated by focussed ion beam (FIB) lithography for comparison to those fabricated by the EBL method are discussed. In addition to this work, the physical and magnetic properties of micron-sized element that have been irradiated using the 30 keV gallium ion source are also discussed. Also in this thesis, the results of 10×10 μm2 arrays of 50 nm thick polycrystalline cobalt elements (270×270 nm2 with a 400 nm period) that are fabricated by EBL to determine if there is any magnetic superdomain structure present are discussed. Bright field imaging in a transmission electron microscope (TEM) is used to investigate the physical structure of the ferromagnets, such as the grain size, element roughness and dimensions. Additional information about the topography is measured by atomic force microscopy (AFM). The magnetic properties, such as the magnitude of the applied field at which irreversible events happen and the domain structure, are investigated by the Fresnel imaging and the differential phase contrast modes of Lorentz microscopy. A programme known as object orientated micromagnetic framework (OOMMF) is used to model the magnetic properties of such structures.

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Tucker, Thomas Marshall. "Three dimensional measurement data analysis in stereolithography rapid prototyping." Thesis, Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/17082.

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Sager, Benay. "A method for understanding and predicting stereolithography resolution." Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/17832.

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Vaseashta, Ashok K. "Photonic studies of defects and amorphization in ion beam damaged GaAs surfaces." Diss., This resource online, 1990. http://scholar.lib.vt.edu/theses/available/etd-08082007-170507/.

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9

Cybart, Shane A. "Planar Josephson junctions and arrays by electron beam lithography and ion damage." Diss., Connected to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2005. http://wwwlib.umi.com/cr/ucsd/fullcit?p3190007.

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Thesis (Ph. D.)--University of California, San Diego, 2005.
Title from first page of PDF file (viewed March 8, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 108-111).

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10

Brown, Karl. "Coupled electron gases fabricated by in situ ion beam lithography and MBE growth." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.319460.

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Books on the topic "Ion Beam Lithography"

1

Gu, Wenqi. Dian zi shu bao guang wei na jia gong ji shu. Beijing: Beijing gong ye da xue chu ban she, 2004.

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2

The physics of submicron lithography. New York: Plenum Press, 1992.

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3

Popov, V. K. Raschet i proektirovanie ustroĭstv ėlektronnoĭ i ionnoĭ litografii. Moskva: "Radio i svi͡a︡zʹ", 1985.

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International Symposium on Electron, Ion, and Photon Beams (2nd 1984 Tarrytown, N.Y.). Proceedings of the 1984 International Symposium on Electron, Ion, and Photon Beams, 29 May-1 June, 1984, Westchester Marriott Hotel, Tarrytown, New York. Edited by Kelly J, American Vacuum Society, and American Institute of Physics. New York: Published for the American Vacuum Society by the American Institute of Physics, 1985.

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5

Dian zi shu sao miao pu guang ji shu. [Peking]: Yu hang chu ban she, 1985.

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6

S, Khokle W., ed. Patterning of material layers in submicron region. New York: J. Wiley, 1993.

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1931-, Bethge Klaus, ed. Ion tracks and microtechnology: Principles and applications. Braunschweig: Vieweg, 1990.

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T, Reid David, ed. Rapid prototyping & manufacturing: Fundamentals of stereolithography. Dearborn, MI: Society of Manufacturing Engineers in cooperation with the Computer and Automated Systems Association of SME, 1992.

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1975-, Ma Xiangguo, and Li Wenping 1976-, eds. Ju jiao li zi shu wei na jia gong ji shu. Beijing: Beijing gong ye da xue chu ban she, 2006.

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service), SpringerLink (Online, ed. Stereolithography: Materials, Processes and Applications. Boston, MA: Springer Science+Business Media, LLC, 2011.

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Book chapters on the topic "Ion Beam Lithography"

1

Gierak, Jacques. "Focused Ion Beam Direct-Writing." In Lithography, 183–232. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch4.

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2

Valiev, Kamil A. "The Physics of Ion-Beam Lithography." In The Physics of Submicron Lithography, 181–300. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3318-4_4.

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Qin, Suran, Na Zhao, Ronghui Jiao, Chunying Zhu, Jiang Liu, Jianmin Shi, and Hanchao Fan. "Application of Ion Beam Etching Technology in Spacecraft Encoder Lithography." In Lecture Notes in Electrical Engineering, 380–90. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-7123-3_45.

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4

Rose, P. D., E. H. Linfield, G. A. C. Jones, and D. A. Ritchie. "3-D Patterned III-V Semiconductor Devices Using High Energy In-Situ Focused Ion Beam Lithography and MBE." In Frontiers in Nanoscale Science of Micron/Submicron Devices, 35–39. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1778-1_3.

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5

Bohlen, Harald, and Werner Kulcke. "Micropositioning for Submicron Electron Beam Lithography." In Progress in Precision Engineering, 174–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-84494-2_18.

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Friedman, Avner. "Mathematical problems in electron beam lithography." In The IMA Volumes in Mathematics and Its Applications, 79–87. New York, NY: Springer New York, 1989. http://dx.doi.org/10.1007/978-1-4615-7402-6_9.

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van Kan, J. A., and K. Ansari. "Box 12: Stamps for Nanoimprint Lithography." In Ion Beams in Nanoscience and Technology, 319–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-00623-4_26.

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Wilkinson, C. D. W. "Applications of Electron Beam Lithography to Integrated Optics." In Springer Series in Optical Sciences, 30–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-540-39452-5_8.

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Bögli, V., P. Unger, H. Beneking, B. Greinke, P. Guttmann, B. Niemann, D. Rudolph, and G. Schmahl. "Microzone Plate Fabrication by 100 keV Electron Beam Lithography." In Springer Series in Optical Sciences, 80–87. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-540-39246-0_15.

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Bernstein, G., and D. K. Ferry. "Fabrication of Short-Gate GaAs MESFETs by Electron Beam Lithography." In Springer Proceedings in Physics, 462. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-71446-7_36.

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Conference papers on the topic "Ion Beam Lithography"

1

Alves, Andrew, Sean M. Hearne, P. Reichart, Reiner Siegele, David N. Jamieson, and Peter N. Johnston. "Ion beam lithography with single ions." In Smart Materials, Nano-, and Micro-Smart Systems, edited by Jung-Chih Chiao, David N. Jamieson, Lorenzo Faraone, and Andrew S. Dzurak. SPIE, 2005. http://dx.doi.org/10.1117/12.582191.

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Cardinal, Thomas, Daniel Andruczyk, He Yu, Vibhu Jindal, Patrick Kearney, and David N. Ruzic. "Modeling the ion beam target interaction to reduce defects generated by ion beam deposition." In SPIE Advanced Lithography, edited by Patrick P. Naulleau and Obert R. Wood II. SPIE, 2012. http://dx.doi.org/10.1117/12.916878.

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3

Miller, Paul A. "Image-Projection Ion-Beam Lithography." In 1989 Microlithography Conferences, edited by Arnold W. Yanof. SPIE, 1989. http://dx.doi.org/10.1117/12.968511.

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Struck, C. R. M., R. Raju, M. J. Neumann, and D. N. Ruzic. "Reducing LER using a grazing incidence ion beam." In SPIE Advanced Lithography, edited by Clifford L. Henderson. SPIE, 2009. http://dx.doi.org/10.1117/12.814263.

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Kearney, Patrick, C. C. Lin, Takashi Sugiyama, Chan-Uk Jeon, Rajul Randive, Ira Reiss, Renga Rajan, Paul Mirkarimi, and Eberhard Spiller. "Ion beam deposition for defect-free EUVL mask blanks." In SPIE Advanced Lithography, edited by Frank M. Schellenberg. SPIE, 2008. http://dx.doi.org/10.1117/12.774505.

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Kearney, Patrick, Vibhu Jindal, Alfred Weaver, Pat Teora, John Sporre, David Ruzic, and Frank Goodwin. "Understanding the ion beam in EUV mask blank production." In SPIE Advanced Lithography, edited by Patrick P. Naulleau and Obert R. Wood II. SPIE, 2012. http://dx.doi.org/10.1117/12.916510.

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Aihara, R., H. Sawaragi, H. Morimoto, and T. Kato. "Focused Ion Beam System For Submicron Lithography." In 1986 Microlithography Conferences, edited by Phillip D. Blais. SPIE, 1986. http://dx.doi.org/10.1117/12.963685.

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Ehrmann, Albrecht, Sabine Huber, Rainer Kaesmaier, Andreas B. Oelmann, Thomas Struck, Reinhard Springer, Joerg Butschke, et al. "Stencil mask technology for ion beam lithography." In 18th Annual BACUS Symposium on Photomask Technology and Management, edited by Brian J. Grenon and Frank E. Abboud. SPIE, 1998. http://dx.doi.org/10.1117/12.332827.

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Springham, Stuart V., Thomas Osipowicz, J. L. Sanchez, Sing Lee, and Frank Watt. "Deep ion-beam lithography for micromachining applications." In ISMA '97 International Symposium on Microelectronics and Assembly, edited by Soon Fatt Yoon, Raymond Yu, and Chris A. Mack. SPIE, 1997. http://dx.doi.org/10.1117/12.280533.

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Luo, Feixiang, Viacheslav Manichev, Mengjun Li, Gavin Mitchson, Boris Yakshinskiy, Torgny Gustafsson, David Johnson, and Eric Garfunkel. "Helium ion beam lithography (HIBL) using HafSOx as the resist." In SPIE Advanced Lithography, edited by Christoph K. Hohle and Todd R. Younkin. SPIE, 2016. http://dx.doi.org/10.1117/12.2219239.

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Reports on the topic "Ion Beam Lithography"

1

Ji, Qing. Maskless, resistless ion beam lithography. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/809301.

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Jiang, Ximan. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System. Office of Scientific and Technical Information (OSTI), May 2006. http://dx.doi.org/10.2172/886610.

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Liu, Weidong. Electron Specimen Interaction in Low Voltage Electron Beam Lithography,. Fort Belvoir, VA: Defense Technical Information Center, July 1995. http://dx.doi.org/10.21236/ada327202.

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