Relevant bibliographies by topics / Ion Beam Analysis (IBA)

Academic literature on the topic 'Ion Beam Analysis (IBA)'

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Published: 25 May 2024

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Journal articles on the topic "Ion Beam Analysis (IBA)"

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Dobrovodský, Jozef, Dušan Vaňa, Matúš Beňo, Anna Závacká, Martin Muška, and Róbert Riedlmajer. "Status of Ion Beam Modification and Analysis of Materials at STU MTF." Research Papers Faculty of Materials Science and Technology Slovak University of Technology 26, no. 43 (September 1, 2018): 9–16. http://dx.doi.org/10.2478/rput-2018-0025.

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Abstract The new Ion Beam Centre (IBC) equipped with 6 MV tandem ion accelerator and 500 kV ion implanter systems was built at the Slovak University of Technology, Faculty of Materials Science and Technology (STU MTF). The facility provides Ion Beam Modification of Materials (IBMM) and Ion Beam Analysis (IBA), which includes Rutherford Backscattering Spectrometry (RBS), Particle Induced X-ray Analysis (PIXE), Elastic Recoil Spectrometry (ERDA) and Nuclear Reaction Analysis (NRA). Presented are selected experimental procedures carried out in the IBC during the first year of operation. They present examples of a typical IBA performed, such as thin film characterisation in nm to tens of µm range, elemental depth profiles and sensitivity to the light elements enhancement by non-Rutherford cross-section regime application along with the crystalline sample channelling spectra and boron content measurement.
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Ješkovský, Miroslav, Jakub Kaizer, Ivan Kontuľ, Jakub Kvasniak, Ján Pánik, Jakub Zeman, and Pavel P. Povinec. "Recent developments in IBA analysis at CENTA, Bratislava." EPJ Web of Conferences 261 (2022): 01002. http://dx.doi.org/10.1051/epjconf/202226101002.

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An experimental setup used at the CENTA (Centre for Nuclear and Accelerator Technologies) laboratory to carry out IBA (Ion Beam Analysis) techniques is described. PIXE (Particle Induced X-ray Emission) technique offers a unique way of non-destructive elemental analysis using accelerated ion beams. The calibration of instrumental constants (H-values) of SDD and BEGe detectors, used in the setup, is described in detail. The H-value was determined as a function of X-ray energy by using thin MicroMatter standards of chosen elements. The calibrated H-values were then used in GUPIXWIN for the determination of elemental concentrations in two IAEA reference materials, which were compared with reference values. A reasonable agreement was achieved between the measured and reference values, while the calibrated H-values will be used for further analyses.
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Möller, Sören, Daniel Höschen, Sina Kurth, Gerwin Esser, Albert Hiller, Christian Scholtysik, Christian Dellen, and Christian Linsmeier. "A New High-Throughput Focused MeV Ion-Beam Analysis Setup." Instruments 5, no. 1 (February 28, 2021): 10. http://dx.doi.org/10.3390/instruments5010010.

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The analysis of material composition by ion-beam analysis (IBA) is becoming a standard method, similar to electron microscopy. A pool of IBA methods exists, from which the combination of particle-induced-X-ray emission (PIXE), particle induced gamma-ray analysis (PIGE), nuclear-reaction-analysis (NRA), and Rutherford-backscattering-spectrometry (RBS) provides the most complete analysis over the whole periodic table in a single measurement. Yet, for a highly resolved and accurate IBA analysis, a sophisticated technical setup is required integrating the detectors, beam optics, and sample arrangement. A new end-station developed and installed in Forschungszentrum Jülich provides these capabilities in combination with high sample throughput and result accuracy. Mechanical tolerances limit the device accuracy to 3% for RBS. Continuous pumping enables 5 × 10−8 mbar base pressure with vibration amplitudes < 0.1 µm. The beam optics achieves a demagnification of 24–34, suitable for µ-beam analysis. An in-vacuum manipulator enables scanning 50 × 50 mm² sample areas with 10 nm accuracy. The setup features the above-mentioned IBA detectors, enabling a broad range of analysis applications such as the operando analysis of batteries or the post-mortem analysis of plasma-exposed samples with up to 3000 discrete points per day. Custom apertures and energy resolutions down to 11 keV enable separation of Fe and Cr in RBS. This work presents the technical solutions together with the quantification of these challenges and their success in the form of a technical reference.
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Shi, Liqun, Hao Shen, and Xufei Wang. "23th International Conference on Ion Beam Analysis (IBA 2017)." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 450 (July 2019): 1–7. http://dx.doi.org/10.1016/j.nimb.2019.05.037.

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Romolo, F. S., M. E. Christopher, M. Donghi, L. Ripani, C. Jeynes, R. P. Webb, N. I. Ward, K. J. Kirkby, and M. J. Bailey. "Integrated Ion Beam Analysis (IBA) in Gunshot Residue (GSR) characterisation." Forensic Science International 231, no. 1-3 (September 2013): 219–28. http://dx.doi.org/10.1016/j.forsciint.2013.05.006.

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Chiari, Massimo. "External Beam IBA Measurements for Cultural Heritage." Applied Sciences 13, no. 5 (March 6, 2023): 3366. http://dx.doi.org/10.3390/app13053366.

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Ion beam analysis (IBA) methods refer to a set of analytical techniques based on the interactions of energetic ions, produced by a particle accelerator, with matter. The result of such interactions is the emission of characteristic radiation, X and gamma rays, and charged particles, which, upon detection, provide valuable information on the absolute concentration and depth distribution of the elements in the bombarded material. Moreover, IBA techniques can be performed while maintaining the object to be investigated at atmospheric pressure, without placing it in vacuum, in an analysis chamber, with the impinging ion beam extracted from the in-vacuum beamline of the accelerator, avoiding the need of invasive sampling and greatly easing the object positioning, thus allowing precious and big or large artefacts to be studied. This feature has opened the way for applications of IBA techniques for compositional analysis in cultural heritage studies, providing detailed and complete information about elemental compositions and depth distributions of analysed materials that are otherwise difficult or impossible for other analytical techniques. In this paper, the basic principles of the main IBA techniques applied to cultural heritage, namely, particle induced X-ray emission (PIXE), particle induced Gamma-ray emission (PIGE), and Rutherford or elastic backscattering spectrometry (RBS/EBS), will be recalled, and specific and practical details on how these techniques can be used for analysing cultural heritage objects with external beam set-ups will be provided.
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UTUI, R. J., N. P. O. HOMMAN, and K. G. MALMQVIST. "THE NEW LOW ENERGY ION BEAM ANALYSIS FACILITY AT MAPUTO UNIVERSITY." International Journal of PIXE 05, no. 04 (January 1995): 249–53. http://dx.doi.org/10.1142/s0129083595000289.

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A new Ion Beam Analysis (IBA) facility which was recently installed in the Department of Physics of the Eduardo Mondlane University of Maputo, Mozambique, is described. The set up is based on a low energy (500 keV) Van de Graaff proton accelerator and is intended to be used in particle induced X-ray emission (PIXE), Rutherford Backscattering (RBS) and nuclear reaction analysis (NRA). Preliminary experiments on beam diagnostics were performed successfully and the followed procedure is described.
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Möller, Sören, Hyunsang Joo, Marcin Rasinski, Markus Mann, Egbert Figgemeier, and Martin Finsterbusch. "Quantitative Lithiation Depth Profiling in Silicon Containing Anodes Investigated by Ion Beam Analysis." Batteries 8, no. 2 (February 8, 2022): 14. http://dx.doi.org/10.3390/batteries8020014.

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The localisation and quantitative analysis of lithium (Li) in battery materials, components, and full cells are scientifically highly relevant, yet challenging tasks. The methodical developments of MeV ion beam analysis (IBA) presented here open up new possibilities for simultaneous elemental quantification and localisation of light and heavy elements in Li and other batteries. It describes the technical prerequisites and limitations of using IBA to analyse and solve current challenges with the example of Li-ion and solid-state battery-related research and development. Here, nuclear reaction analysis and Rutherford backscattering spectrometry can provide spatial resolutions down to 70 nm and 1% accuracy. To demonstrate the new insights to be gained by IBA, SiOx-containing graphite anodes are lithiated to six states-of-charge (SoC) between 0–50%. The quantitative Li depth profiling of the anodes shows a linear increase of the Li concentration with SoC and a match of injected and detected Li-ions. This unambiguously proofs the electrochemical activity of Si. Already at 50% SoC, we derive C/Li = 5.4 (< LiC6) when neglecting Si, proving a relevant uptake of Li by the 8 atom % Si (C/Si ≈ 9) in the anode with Li/Si ≤ 1.8 in this case. Extrapolations to full lithiation show a maximum of Li/Si = 1.04 ± 0.05. The analysis reveals all element concentrations are constant over the anode thickness of 44 µm, except for a ~6-µm-thick separator-side surface layer. Here, the Li and Si concentrations are a factor 1.23 higher compared to the bulk for all SoC, indicating preferential Li binding to SiOx. These insights are so far not accessible with conventional analysis methods and are a first important step towards in-depth knowledge of quantitative Li distributions on the component level and a further application of IBA in the battery community.
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Mayer, M. "An expert-assisted system for improving the quality of IBA simulations by SIMNRA." Journal of Physics: Conference Series 2326, no. 1 (October 1, 2022): 012007. http://dx.doi.org/10.1088/1742-6596/2326/1/012007.

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Abstract SIMNRA is a popular software suite for the simulation of ion beam analysis (IBA) spectra. SIMNRA 7.04 implements a new expert system supporting users in selecting the most accurate simulation settings for a given ion/target combination at a given energy and geometry. The expert system is a piece of artificial intelligence emulating the ability and knowledge of a human IBA expert. It points out potential problems with the current simulation parameters and recommends model settings with enhanced accuracy.
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Dobrovodský, J., D. Vaňa, M. Beňo, F. Lofaj, and R. Riedlmajer. "Ion Beam Analysis including ToF-ERDA of complex composition layers." Journal of Physics: Conference Series 2712, no. 1 (February 1, 2024): 012024. http://dx.doi.org/10.1088/1742-6596/2712/1/012024.

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Abstract When developing new materials for example, for high-temperature nuclear reactors with the potential of hydrogen production, that are characterized by radiation, high temperature and corrosion resistance, it is indispensable the knowledge of their detailed elemental composition and its possible variation with depth from surface. Several analytical methods based on different physical principles are used to determine the depth distribution of elements in the surface layers of materials. For the quantitative determination of elemental depth profile to a depth of several micrometres are applicable established Ion Beam Analysis (IBA) methods such as RBS, EBS, NRA and ERDA. Their advantage is that they are considered to be absolute and to a certain extent non-destructive. Each of these methods is advantageously used to analyse a certain range of elements, sometimes depending on the combination of other elements present. The recently commissioned Time of Flight Elastic Recoil Analysis (ToF-ERDA) measuring system at the Slovak University of Technology MTF in Trnava significantly enhanced the Ion Beam Laboratory capability of a comprehensive elemental analysis of thin films to the depth of hundreds of nanometres. Using the primary analysing 50 MeV Au beam, the depth profiles of all elements from W to H can be obtained within a single measurement. Analysis of complex samples using traditional IBA methods and high-energy ToF-ERDA is discussed and compared. The first measurements on the new ToF-ERDA installation are also presented.
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Dissertations / Theses on the topic "Ion Beam Analysis (IBA)"

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Back, Markus. "Investigation of the properties of thin films grown via sputtering and resistive thermal evaporation : an Ion Beam Analysis (IBA) study." Thesis, Uppsala universitet, Tillämpad kärnfysik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-257506.

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In this project, thin films are being manufactured by different methods in a thin film deposition set-up and subsequently characterized. This is done in order to determine if the set-up is capable of producing films of sufficient quality to be used for research purposes in the ion physics group of the division of applied nuclear physics at Uppsala University. Both copper and silver films are manufactured by magnetron sputtering deposition. Copper films are also manufactured by evaporation deposition. Deposition is made on Si(001) substrates. The films are analyzed with Rutherford Backscattering Spectrometry (RBS) and Time of Flight- Elastic Recoil Detection Analysis (ToF-ERDA). Results show that the deposition rate of the set-up is much faster compared to the one provided by the manufacturer of the set-up. The purity of the films i.e. the concentrations of the contaminants are found to be in an acceptable range for research applications with an average oxygen contamination of  and carbon contamination of  for sputtered copper films. Sputtered silver films were found to have an oxygen contamination of  and a carbon contamination of . Evaporated copper films were found to have an oxygen contamination of  and carbon contamination of . Traces of gold () were found exclusively in the sputtered films. Trace amounts of hydrogen could also be detected in both sputtered and evaporated films. The evaporated films are found to show lower contamination by oxygen than the sputtered films, but the manufacturing process employed in this study of evaporated films is not suitable to use for producing thin films of specific thicknesses as there is insufficient data to find a deposition speed. Overall, the set-up is capable of producing thin films with a sufficient quality for it to be used by the department when producing thin films for research.
I det här projektet produceras tunnfilmer med olika metoder i en uppställning för tunnfilmsdeposition och karaktäriseras sedan för att bedöma om maskinen är kapabel att producera filmer av tillräckligt bra kvalitet för att kunna användas i forskningssyften inom jonfysikgruppen på avdelningen för tillämpad kärnfysik på Uppsala Universitet. Både koppar och silverfilmer produceras med magnetronsputtring. Kopparfilmer produceras också med resistiv förångning. Deposition sker på Si(001)-substrat. Filmerna analyseras med Rutherford Backscattering Spectrometry (RBS) och Time of Flight- Elastic Recoil Detection Analysis (ToF-ERDA). Resultaten visar att depositionshastigheten för maskinen är snabbare än det som angetts av företaget som producerar maskinen. Renheten hos filmerna, dvs. koncentrationen av föroreningar, finnes vara inom en acceptabel nivå för forskningstillämpningar med en genomsnittlig syrekontamination på  och kolkontamination på  för sputtrade kopparfilmer. Sputtrade silverfilmer finnes ha en syrekontamination på  och en kolkontamination på . Förångade kopparfilmer finnes att ha en syrekontamination på  och en kolkontamination på . Spår av guld () hittades enbart i sputtrade filmer. Spår av väte kunde också hittas i både sputtrade och förångade filmer. De förångade filmerna finnes ha lägre syrekontamination än de sputtrade filmerna, men tillverkningsprocessen som används i projektet vid tillverkning av förångade filmer är inte lämplig att använda i produktion av tunnfilmer med specifika tjocklekar då det saknas data för att kunna hitta en depositionshastighet. Totalt sett är uppställningen kapabel att producera filmer av adekvat kvalitet för att de ska kunna användas inom avdelningen för produktion av filmer för forskning.
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Bykov, Igor. "Experimental studies of materials migration in magnetic confinement fusion devices : Novel methods for measurement of macro particle migration, transport of atomic impurities and characterization of exposed surfaces." Doctoral thesis, KTH, Fusionsplasmafysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-145045.

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During several decades of research and development in the field of Magnetically Confined Fusion (MCF) the preferred selection of materials for Plasma Facing Components (PFC) has changed repeatedly. Without doubt, endurance of the first wall will decide research availability and lifespan of the first International Thermonuclear Research Reactor (ITER). Materials erosion, redeposition and mixing in the reactor are the critical processes responsible for modification of materials properties under plasma impact. This thesis presents several diagnostic techniques and their applications for studies of materials transport in fusion devices. The measurements were made at the EXTRAP T2R Reversed Field Pinch operated in Alfvén laboratory at KTH (Sweden), the TEXTOR tokamak, recently shut down at Forschungszentrum Jülich (Germany) and in the JET tokamak at CCFE (UK). The main outcomes of the work are: Development and application of a method for non-destructive capture and characterization of fast dust particles moving in the edge plasma of fusion devices, as well as particles generated upon laser-assisted cleaning of plasma exposed surfaces.  Advancement of conventional broad beam and micro ion beam techniques to include measurement of tritium in the surfaces exposed in future D-T experiments.  Adaption of the micro ion beam method for precision mapping of non uniform elements concentrations on irregular surfaces.  Implementation of an isotopic marker to study the large scale materials migration in a tokamak and development of a method for fast non destructive sampling of the marker on surfaces of PFCs.

QC 20140508

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Santos, Thales Borrely dos. "Controle de propriedades de filmes finos de óxido de alumínio através da assistência de feixe iônico." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-03062017-212721/.

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Este trabalho tem por objetivo a caracterização de filmes finos de óxido de alumínio produzidos por deposição assistida por feixe de íons Ar+. Tal caracterização consiste em estabelecer a relação entre os parâmetros de produção (energia do feixe e uxo relativo de Ar), a composição e a estrutura dos lmes. Para tanto, utiliza-se técnicas de microscopia de força atômica, difração de raios-x, reetividade de raios-x e análise por feixe iônico. Resultados mostram que amostras produzidas à temperatura ambiente e à 450 oC são amorfas independentemente da energia do feixe iônico. Filmes formados com assistência de feixe possuem qualidade superior àqueles formados por deposição física de vapor. O bombardeamento de íons Ar+ mostra-se capaz de controlar a concentração de hidrogênio, a estequiometria, a rugosidade, o tamanho dos grãos e a densidade dos lmes nos. Amostras com excelente qualidade baixa rugosidade, estequiometria próxima da ideal e boa densidade foram produzidas utilizando íons com energia dentre 300 eV e 600 eV.
The scope of this work is the characterization of aluminum oxide thin films produced by Ar+ ion beam assisted deposition. This characterization consists in establishing the relationship between production parameters (ion beam energy and argon relative ux), structure and composition of these lms. In order to undertake this task, the following techniques were used: atomic force microscopy, x-ray diraction, x-ray reectivity and ion beam analysis. Results show that samples produced at room temperature and at 450 oC are amorphous regardless the ion beam energy. Films grown under ion assistance have better characteristics than the ones deposited by physical vapor deposition. The ion beam bombardment is capable of controlling hydrogen concentration, stoichiometry, roughness, grain size and density of alumina samples. High quality lms at surface and increased density lms with near ideal stoichiometry were produced with 300 eV and 600 eV ion beam energy.
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Moro, Marcos Vinicius. "Estudos de técnicas de feixes iônicos para a quantificação do elemento químico boro." Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-133916/.

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Neste trabalho, estudamos e aplicamos técnicas analíticas com feixes iônicos para a identificação e quantificação do elemento químico Boro em amostras de Boro depositado sobre Níquel 11B/Ni, sobre Silício B/Si e em amostras de Silício Grau Metalúrgico - SiGM. Estas últimas foram fornecidas pelo grupo de metalurgia do Instituto de Pesquisas Tecnológicas (IPT). Especificamente, as seguintes técnicas analíticas foram utilizadas: Nuclear Reaction Analysis - NRA, Elastic Recoil Detection Analysis - ERDA e Secondary Ion Mass Spectrometry - SIMS. Nas amostras de B/Ni e B/Si, as concentrações foram obtidas com medidas de NRA, ERDA e SIMS. Também foi abordado quais dentre essas três técnicas apresentam menor limite de deteção e menor incerteza para a quantificação de Boro. Usando a reação nuclear 11B(p,a0)8Be, foi possível calcular a sua seção de choque diferencial para ângulo de espalhamento theta=170, cujo resultado, para este ângulo específico, é inédito na literatura. As amostras de SiGM foram analisadas com a técnica SIMS e comparadas com medidas de Inductively Coupled Plasma - ICP realizadas pelo grupo do IPT. Uma vez que técnicas nucleares podem ser consideradas absolutas, concluímos que as medidas de ICP apresentaram dados compatíveis com as medidas SIMS, e que o grupo de metalurgia do IPT está medindo as concentrações de Boro em suas amostras de SiGM corretamente por meio de ICP. Uma reta de calibração entre medidas SIMSxICP foi construída, que poderá servir como um guia para futuras quantificações de Boro com ICP feitas pelo grupo de metalurgia do IPT.
In this work we investigated the use of analytical techniques based on ion beams in the quantification of Boron in many kinds of samples. Specifically, we applied techniques such Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA) and Secondary Ion Mass Spectrometry (SIMS) to 11B/Ni and B/Si samples to measure the boron concentration. We also discuss and show what technique has a better detection limit and lower uncertainty. For the first time in the literature, we obtained the cross section for the $^{11}B(p,\\alpha_0){^8}Be$ nuclear reaction in the energy range from 1.6 up to 2.0 MeV in theta = 170 scattering angle. The SIMS technique was applied to analise samples of metallurgical grade silicon (SiGM) from Metallurgy Group of Instituto de Pesquisas Tecnologicas (IPT) to check the Inductively Coupled Plasma (ICP) measurements carried out by the IPT. Moreover, it was possible to build a calibration curve between SIMS and ICP measurements, that can be used to help of Metallurgy Group with futures ICP\'s measurements.
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Xia, Bingbing. "The growth and application of thin films grown by Atomic Layer Deposition (ALD)." Electronic Thesis or Diss., Sorbonne université, 2022. http://www.theses.fr/2022SORUS576.

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Nous avons étudié les mécanismes de croissance du dépôt atomique couche par couche (ALD) de films minces de ZnO, TiO2, Al2O3 et HfO2, en particulier en utilisant le traçage isotopique stable en conjonction avec les techniques d'analyse par faisceau d'ions isotopiquement sensibles, à savoir, la Spectrométrie de rétrodiffusion de Rutherford (RBS), l’analyse de détection de recul élastique (ERDA) et l’analyse de réaction nucléaire (NRA). En utilisant des précurseurs ALD marqués au deutérium, isotope rare, nous distinguons l'origine des éléments bruts et des impuretés dans chacun des films - de l'un ou l'autre des précurseurs, ou des gaz résiduels dans la chambre de réaction. Les contributions relatives sont suivies en fonction de la température de dépôt, du bas vers le haut de la fenêtre de température ALD. Nous avons constaté que la structure de surface du film pouvait être lisse ou rugueuse selon les matériaux déposés. En faisant croître différents couples de films A-sur-B ou B-sur-A, dans des précurseurs différemment marqués, nous avons mis en évidence le rôle de la molécule d'eau dans le mécanisme de croissance multicouche, et avons pu observer la diffusion atomique de H et D dans le système multicouche. Dans un système multicouche, nous avons développé un prototype de structure sandwich qui facilite le transport des ions protons lorsque le film multicouche est polarisé électriquement dans un électrolyte acide également enrichi en deutérium ou utilisant des acides marqués au deutérium, dans des conditions pertinentes pour le fonctionnement des batteries proton-ion (PIB)
We have studied the Atomic Layer Deposition (ALD) growth mechanisms of ZnO, TiO2, Al2O3 and HfO2 thin films, in particular using stable isotopic tracing in conjunction with the isotopically sensitive ion beam analysis techniques Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA). By using ALD precursors labelled in rare isotope deuterium we distinguish the origin of the bulk and impurity elements in each of the films - from one or other of the precursors, or from residual gases in the reaction chamber. The relative contributions are followed as a function of deposition temperature, from below to above the ALD temperature window. We show by NRA determination of carbon in the films that there is a narrower temperature range, within the ALD window, for which residual contaminants are minimized. We found that the film surface structure could be smooth or rough depending on the grown materials. By growing different couples of films A-on-B or B-on-A, in differently labelled precursors, we highlight the role of the water molecule in the multilayer growth mechanism, and could observe the H and D atomic diffusion in the multilayer system. In the TiO2/ZnO multilayer system, we developed a prototype sandwich structure that facilitates proton ion transport when the multilayer film is electrically polarized in an acid electrolyte also enriched in deuterium or using deuterium labelled acids, under conditions relevant to the operation of proton ion batteries (PIB). The depth distributions of H and D established in this system by ERDA showed fast galvanostatic proton insertion and extraction. We have studied the Atomic Layer Deposition (ALD) growth mechanisms of ZnO, TiO2, Al2O3 and HfO2 thin films, in particular using stable isotopic tracing in conjunction with the isotopically sensitive ion beam analysis techniques Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA). By using ALD precursors labelled in rare isotope deuterium we distinguish the origin of the bulk and impurity elements in each of the films - from one or other of the precursors, or from residual gases in the reaction chamber. The relative contributions are followed as a function of deposition temperature, from below to above the ALD temperature window. We show by NRA determination of carbon in the films that there is a narrower temperature range, within the ALD window, for which residual contaminants are minimized. We found that the film surface structure could be smooth or rough depending on the grown materials. By growing different couples of films A-on-B or B-on-A, in differently labelled precursors, we highlight the role of the water molecule in the multilayer growth mechanism, and could observe the H and D atomic diffusion in the multilayer system. In the TiO2/ZnO multilayer system, we developed a prototype sandwich structure that facilitates proton ion transport when the multilayer film is electrically polarized in an acid electrolyte also enriched in deuterium or using deuterium labelled acids, under conditions relevant to the operation of proton ion batteries (PIB). The depth distributions of H and D established in this system by ERDA showed fast galvanostatic proton insertion and extraction
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Boudreault, Ghislain. "Accurate ion beam analysis." Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/844001/.

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This thesis primarily deals with accuracy obtainable when using IBA (Ion Beam Analysis) techniques to characterize materials. RBS (Rutherford Backscattering Spectrometry) is the main technique used, together with EBS (Elastic Backscattering Spectrometry), ERDA (Elastic Recoil Detection Analysis) and NRA (Nuclear Reaction Analysis). An exhaustive literature review on these analytical methods is made in connection with accuracy issues such as stopping powers and multiple scattering. The experimental set-ups and procedures are described, with emphasis laid on critical aspects of work where the highest accuracy is required. The instrumentation for dosimetry on ion implanters is first estabhshed at the 1% level for high-dose heavy implants in silicon. A new parameterisation of He stopping power in Si is used, and this latter material, via the surface yield, is used as a calibration standard. A precision (standard uncertainty) in the determination of implantation doses by RBS is conclusively demonstrated at 1.5%. The IBA DataFurnace code is validated for such accurate analysis, which can now be made routinely and rapidly. The certified Sb sample IRMM-302/BAM-L001, which has a certification of 0.6% traceable to the international standard of weight in Paris, is measured, and more importantly this measurement demonstrates the reliability of the stopping power parameterisation at 1.4%. Using conventional ERDA, the H dose of an amorphised Si wafer, implanted with 6-keV H+ ions, is found to be 57.8(1.0)x1015 at/cm2, which is a 1.8% standard uncertainty. The estimated combined uncertainty of this measurement is ~6%, and this mainly comes from the determination of the ERDA solid angle by using standard Kapton. The Kapton composition is carefully determined using RBS. The RBS solid angle is obtained using the amorphised silicon surface yield as a calibration standard as in the dosimetry analysis mentioned above. The ERDA H absolute dose obtained is compared with the results from other participants from all over the world in a Round Robin exercise, which includes measurements by using both He-ERDA and HI-ERDA (Heavy Ion-ERDA) together using various detectors. The results from each participant are given and compared. The overall absolute dose obtained of the implant is 57.0(1.2)x1015 H/cm2, and this represents an inter-lab reproducibility of 2.2% (standard uncertainty). Unstable surface hydrogen contamination was observed, and this surface peak was resolved by some of the methods. This implant can now be used as a standard for quantitative analysis of hydrogen. Low-fluorine content SiO2:F films are analysed by RBS for absolute fluorine concentration determination. Prior to the RBS analysis, the uniformity of the films and stability of F under beam irradiation is investigated. Because the RBS is not very sensitive to F and the F signal has a large matrix background, an internally consistent method of data handling, which enables the relative collected charge to be determined very precisely for the spectra from different samples, is developed. This method has as a parameter the F content, which is then extracted iteratively. A F concentration of 10 at% is determined with an estimated uncertainty of 10% (one percentage point, i.e. 10 +/- 1%). The O stopping powers are found to be the main factor governing the accuracy of the absolute determination of the F content. All the other uncertainties add up to only ~1%. The elemental composition of residual deposits from an ion implanter is thoroughly investigated using several complementary analytical methods, namely, RBS, BBS and NRA. Preliminary SEM/EDAX results are used as a guide. Depth profiles of such non-homogeneous, non-fiat and brittle samples are obtained, which give an indication of the concentration of each element present. From this complete IBA elemental study, some unprecedented light is brought on both the history of the implanter and the way in which these deposits are formed. Such an investigation is essential for a better understanding and the development/miniaturisation of semiconductors as it impressively pushes the boundaries of accuracy obtainable in IBA material characterisation.
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Müggenburg, Jan. "Ion beam analysis of metallic vanadium superlattices : Ion beam analysis of metallic vanadium superlattices." Thesis, Uppsala universitet, Tillämpad kärnfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-328067.

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Messerly, Michael Joseph. "Ion-beam analysis of optical coatings." Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184273.

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Rutherford backscattering spectrometry (RBS) is shown to be an elegant, powerful tool for the chemical characterization of optical coatings. RBS studies of several thin film materials are presented to illustrate the technique's unique abilities, and to show how RBS is best exploited in investigations of thin film stoichiometry and diffusion. The text begins with an introduction to optical coatings and the practical problems encountered in their implementation. The basic principles of RBS are discussed, and the technique is compared to other popular surface analysis tools. The introductory material concludes with a chapter devoted to specific techniques for RBS data and error analysis, including the derivation of a simple formula for determining the optimum thickness of multi-element samples. The accurate stoichiometric measurements provided by RBS give new insights into the chemical structure of ion-bombarded MgF₂ coatings. The analysis shows that lightly-bombarded coatings contain a small oxygen fraction (< 6%), and the absence of this oxygen in opaque, heavily-bombarded samples implies the oxygen compensates for fluorine deficiencies and is therefore an essential ingredient for transparent films. This beneficial oxygen appears to diffuse into the coatings along columnar voids, and the implied compromise between packing density and transparency is discussed. The final chapter takes advantage of the nondestructive depth-profiles provided by RBS. We present the first direct experimental verification of the interfacial oxide layer responsible for the superior adhesion of aluminum to glass, and show that contrary to popular belief, the layer is not an artifact of oxygen adsorbed during the aluminum's evaporation. We then discuss the diffusion of copper through silver films, and show that the migration is enhanced by exposure to the RBS probe beam. Finally, we consider the diffusion of carbon, from graphite substrates, into the voids of porous coatings during the RBS measurements. This effect, like the enhanced copper diffusion, is consistent with a low temperature, measurement-induced anneal; however, we show that the migrant carbon does not alter the chemical structure of the coatings, but instead serves as a convenient, non-intrusive indicator of film porosity.
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Gauntlett, F. E. "Novel applications of ion beam analysis techniques." Thesis, University of Surrey, 2009. http://epubs.surrey.ac.uk/842938/.

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Ion beam analysis (IBA) has been used as a powerful tool for studying materials for many years. Depending on the specific experimental design, IBA techniques can provide a non-destructive means of analysing samples to obtain such information as the elements or isotopes present and diffusion or depth profiles. Ion beam analysis has the ability to keep up with the rapid progress in new materials both as technology improves and as scientists have the creativity to develop existing and new techniques. Many different types of IBA exist. The experiments reported in this thesis were carried out using backscattering of the beam ions, ion induced X-ray emission, and ion induced nuclear reactions. The two experimental projects involved the use of modem cadmium-telluride detectors, including a unique array of CdZnTe detectors. The subsidiary project investigated using nuclear reaction measurements to study moisture diffusing into epoxy resin bonded with aluminium. Current standard techniques cannot measure diffusion profiles directly, resulting predictions rely on assumptions as to the particular mode of moisture migration. I have shown that the ion beam analysis technique can be applied to directly study moisture diffusion profiles parallel and perpendicular to the interfacial region whilst the bond remains intact. Further use of the technique would be of importance in studying the effect of moisture on bond integrity in automotive and aerospace industries - this would result in better predictions of the longevity of adhesive joints. For the main experiment, novel ion beam methods were developed to characterise, for the first time non-destructively, gold flecks dispersed within low density foam cylinders. The techniques allow the measurement of both the mass of gold in the cylinders and the average size of the individual gold flecks. Several different problems not previously encountered in ion beam analyses have been addressed and understood.
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Shearmur, Thomas E. "Ion beam analysis of diffusion in polymers." Thesis, University of Surrey, 1996. http://epubs.surrey.ac.uk/844449/.

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With the rapid spread in use of polymers the study of diffusion in them is becoming increasingly important. For a number of industrial processes diffusion coefficients and elemental distributions need to be quantified precisely. From a more scientific approach accurate models need to be devised to describe the various diffusion mechanisms involved as well as the concentration and temperature dependencies of the diffusion coefficients. Using ion beam analysis techniques (Rutherford Backscattering and Nuclear Reaction Analysis) three systems were studied. The first was an industrially relevant system of relatively small dye molecules diffusing into a number of different polymer matrices. For fixed diffusion settings, diffusion coefficients were measured and found to correlate with the matrix glass transition temperatures. Surface dye concentrations, on the other hand, were independent of matrix properties. The other two systems studied involved polymer interdiffusion. Based on different assumptions, two contradictory theories have been developed to describe the concentration dependence of the mutual diffusion coefficient; the 'slow' and 'fast' theories. In one system, blends of low molecular weight (unentangled) polystyrene and poly(methyl methacrylate) our data followed the 'slow' theory at low temperatures and the 'fast' theory at high temperatures. An equation describing the concentration dependence of the mutual diffusion coefficient at all intermediate annealing temperatures (hence linking the 'slow' and 'fast' theories) was developed and found to describe the data accurately. In the second system, blends of entangled poly(methyl methacrylate) of several molecular weights, the mutual diffusion coefficient was found to follow the 'fast' theory at all studied temperatures. In all three systems the temperature dependence of the tracer diffusion coefficients of the various components were accurately described by the semi-empirical equations of the Free Volume theory.
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Books on the topic "Ion Beam Analysis (IBA)"

1

Jalabert, Denis, Ian Vickridge, and Amal Chabli. Swift Ion Beam Analysis in Nanosciences. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2017. http://dx.doi.org/10.1002/9781119005063.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis. 2nd ed. Warrendale, PA: Materials Research Society, 2009.

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R, Tesmer Joseph, and Nastasi Michael Anthony 1950-, eds. Handbook of modern ion beam materials analysis. Pittsburgh, Pa: Materials Research Society, 1995.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis. 2nd ed. Warrendale, PA: Materials Research Society, 2009.

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Komarov, F. F. Non-destructive ion beam analysis of surfaces. New York: Gordon and Breach Science Publishers, 1990.

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Götz, Gerhard, Prof. Dr. sc. nat. and Gärtner Konrad, eds. High energy ion beam analysis of solids. Berlin: Akademie-Verlag, 1988.

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International Conference on Ion Beam Analysis (11th 1993 Balatonfüred, Hungary). Ion beam analysis: Proceedings of the eleventh International Conference on Ion Beam Analysis, Balatonfüred, Hungary, July 5-9, 1993. Edited by Gyulai J. Amsterdam: North-Holland, 1994.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis: Appendices. 2nd ed. Warrendale, PA: Materials Research Society, 2009.

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Wang, Yongqiang. Handbook of modern ion beam materials analysis: Appendices. 2nd ed. Warrendale, PA: Materials Research Society, 2009.

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International, Conference on Ion Beam Analysis (10th 1991 Eindhoven The Netherlands). Ion beam analysis: Proceedings of the Tenth International Conference on Ion Beam Analysis, Eindhoven, The Netherlands, 1-5 July, 1991. Amsterdam: North-Holland, 1992.

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Book chapters on the topic "Ion Beam Analysis (IBA)"

1

Avasthi, D. K., and G. K. Mehta. "Ion Beam Analysis." In Swift Heavy Ions for Materials Engineering and Nanostructuring, 67–85. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-1229-4_3.

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Schmidt, Bernd, and Klaus Wetzig. "Ion Beam Technology." In Ion Beams in Materials Processing and Analysis, 33–116. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-211-99356-9_3.

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Šmit, Ž. "Ion-Beam Analysis Methods." In Modern Methods for Analysing Archaeological and Historical Glass, 155–83. Oxford, UK: John Wiley & Sons Ltd, 2013. http://dx.doi.org/10.1002/9781118314234.ch7.

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Dresselhaus, M. S., and R. Kalish. "Ion Beam Analysis Techniques." In Ion Implantation in Diamond, Graphite and Related Materials, 38–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77171-2_4.

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Yamamoto, Shunya. "Ion Beam Analysis of Materials." In An Advanced Course in Nuclear Engineering, 145–62. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7350-2_12.

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Rupertus, Volker. "Ion Beam Spectrochemical Analysis (IBSCA)." In Surface and Thin Film Analysis, 357–66. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch22.

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Valković, Vlado. "Ion Beam Analysis: Analytical Applications." In Low Energy Particle Accelerator-Based Technologies and Their Applications, 149–222. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003033684-3.

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Schmidt, Bernd, and Klaus Wetzig. "Ion Beam Preparation of Materials." In Ion Beams in Materials Processing and Analysis, 253–300. Vienna: Springer Vienna, 2012. http://dx.doi.org/10.1007/978-3-211-99356-9_5.

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Petzold, G., P. Siebert, and J. Müller. "A Micromachined Electron Beam Ion Source." In Micro Total Analysis Systems 2000, 171–74. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-017-2264-3_40.

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Sakamoto, Tetsuo. "Focused Ion Beam Scanning Electron Microscope." In Compendium of Surface and Interface Analysis, 181–86. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-6156-1_31.

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Conference papers on the topic "Ion Beam Analysis (IBA)"

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Kennedy, C. E., and R. L. Swisher. "Cost Analysis of Solar Reflective Hard-Coat Materials Deposited by Ion-Beam-Assisted Deposition." In ASME 2004 International Solar Energy Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/isec2004-65112.

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Commercialization of concentrating solar power (CSP) technologies require the development of advanced reflector materials that are low cost and maintain high specular reflectance for extended lifetimes under severe outdoor environments. During the past 9 years, the National Renewable Energy Laboratory (NREL) has funded Science Applications International Corporation (SAIC) in McLean, Virginia, to develop a promising low-cost advanced solar reflective material (ASRM) combining the best of both thin-glass and silvered-polymer reflectors. The alumina (Al2O3) coating is deposited by ion-beam-assisted physical vapor deposition (IBAD). Materials undergoing testing demonstrate excellent durability under accelerated and outdoor weathering. To help commercialize the technology, NREL had a cost analysis performed incorporating realistic web coating assumptions and the technical improvements made in the ASRM. The biggest process cost items are the alumina and machine burden (which collects the cost of the building and office staff). The switch from a polyethylene terethaphalate (PET) to a steel substrate for the ASRM is a significant contributor to the cost. The cost of high-purity alumina should drop from $400/kg to $200/kg when purchased in 20-kg quantities. Alumina deposition rate then becomes the critical cost driver. In a previous study, deposition rates above 100 nm/s were not examined, but deposition rates greater than 100 nm/s are being used routinely for thin alumina coatings deposited on commercial web-coaters as barrier coatings. In addition, multiple (2–3) Al2O3 IBAD zones can be used in one roll-coating machine to deposit thicker alumina at a lower web speed. This means that with increasing deposition rate and/or multiple zones, the total production cost of the SAIC ASRM with 1-μm thick Al2O3 on PET will meet both the 1992 cost goal of $10.76/m2 ($1/ft2) and the equivalent cost goal of $13.79/m2 ($1.31/ft2) when the 1992 cost goal is corrected for inflation. There is a minimum deposition rate needed to reach the cost goal and a maximum deposition rate related to the number of zones after which no significant cost gains are observed. These asymptotic total production costs are $8.06/m2 ($7.39/m2 excluding substrate) for a large commercial web-coating company and $7.62/m2 ($6.94/m2 excluding substrate) for a smaller company. As can be seen by these numbers, the $10.76/m2 cost goal can be reached, but the cost of the substrate is still a major consideration. In addition, the width of the web was increased from 600 to 1200 mm, which decreased the asymptotic total production costs. The results of the cost analysis will be described.
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Walter, J., R. Fischer, and C. Birzer. "Analysis Methods for Characterizing Drop Test Robustness of Lead-Free FBGAs." In ISTFA 2005. ASM International, 2005. http://dx.doi.org/10.31399/asm.cp.istfa2005p0145.

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Abstract During the last few years the drop test has become more and more important for electronic handheld components. Drop test reliability for lead-free solder interconnects is an extreme challenge today. Thus, the need for improved micro structural diagnostics of new material combinations and crack detection methods has increased. The target of this paper is to summarize detection and analysis methods for solder joint cracks, material characterization [1] and preparation methods of assembled printed circuit boards (PCB) after a drop test to completely understand lead-free solder interconnect reliability in fine pitch ball grid array packages (FBGA). In particular, we will introduce the outstanding advantages of embedded cross-sections combined with ion beam polishing (IBP), dye- or rather resin-penetration, selective tin etch and micro-hardness measurements.
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Herschbein, Steven B., Carmelo F. Scrudato, George K. Worth, and Edward S. Hermann. "The Challenges of Backside Focused Ion Beam (FIB) Editing in the Presence of Deep Trench Decoupling Capacitors." In ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0031.

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Abstract For most advanced semiconductor products, Focused Ion Beam (FIB) circuit modification and node access through the backside of the chip is the only viable approach. The high density of interconnect wiring and the presence of C4 solder bumping for chip to module attachment has made complex edits virtually impossible with long standing conventional frontside techniques. Unfortunately, the presence of buried circuit elements on the very latest designs greatly complicates the backside editing formula. The introduction of deep trench capacitors as a distributed circuit element in logic designs has had a profound impact on the established methods of backside FIB chip editing. In many cases wide area preparatory trenching down to the underside of circuitry cannot be done without damage to structures that penetrate the silicon adjacent to active transistors by as much as 10 microns. The decision whether to remove these devices or attempt to work around them requires an analysis of the impact on circuit performance and an assessment of the working space (control of anisotropy of etch, aspect ratio issues, etc.) available for executing the edit. IBM is in the process of developing a new set of procedures for performing FIB backside edits on circuits that incorporate these buried structures.
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Blalock, Travis, Xiao Bai, and Afsaneh Rabiei. "Effect of Substrate Temperature on Properties of Nano-Scale Functionally Graded Calcium Phosphate Coatings." In ASME 2006 International Manufacturing Science and Engineering Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/msec2006-21047.

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The effect of substrate temperature and processing parameters on microstructure and crystallinity of calcium phosphate coatings deposited on heated substrates in an Ion Beam Assisted Deposition (IBAD) system are being studied. The experimental procedures include mechanical testing and film thickness measurements using bonding strength and profilometery. Cross-sectional scanning transmission electron microscopy (STEM) with energy dispersive X-ray spectroscopy (EDX) through the thickness of the film as well as scanning electron microscopy (SEM) with EDX at the top surface of the film was performed to evaluate the microstructure of the film. The coating crystallinity was studied through X-ray diffraction (XRD). The information gained from current analysis on the set temperature coatings will be used to refine the processing techniques of the Functionally Graded Hydroxyapatite (FGHA) coating.
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Sˇkoric´, B., D. Kakasˇ, and M. Rakita. "Some Tribological Aspects of the Duplex Coatings With Additional Ion Bombardment." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-64218.

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A duplex surface treatment involves the sequential application of two surface technologies to produce a surface composition with combined properties. A typical duplex process involves plasma nitriding and the coating treatment of steels. In the paper are presented characteristics of hard coatings, type TiN, produced by classic technology PVD (physical vapour deposition) and IBAD (ion beam assisted deposition). The synthesis of the TiN film by IBAD has been performed by irradiation of Ar ions. The evolution of the microstructure from porous and columnar grains to densel packed grains is accompanied by changes in mechanical and physical properties (1). Subsequent ion implantation was provided with N ions. Wear tests were carried out using a pin-on-ring geometry with no lubrication.. Varieties of analytic techniques were used for characterization, such as scratch test, calo test, SEM, XRD and EDAX. X-ray diffraction studies were undertaken in an attempt to determine the phases present, and perhaps an estimate of grain size from line broadening. The results were correlated with properties determined from mechanical and tribological characterisation.
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Mefo, J., K. J. Kirkby, B. J. Sealy, G. Boudreault, C. Jeynes, and E. J. H. Collart. "Elemental analysis of residual deposits in an ion implanter using IBA techniques." In Proceedings of the 2002 14th International Conference on Ion Implantation Technology. IEEE, 2002. http://dx.doi.org/10.1109/iit.2002.1258042.

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Toussaint, U. v. "Bayesian analysis of ion beam diagnostics." In The twentieth international workshop on bayesian inference and maximum entropy methods in science and engineering. AIP, 2001. http://dx.doi.org/10.1063/1.1381922.

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Schaaf, Peter, Christof Illgner, Felix Landry, and Klaus-Peter Lieb. "Laser nitriding and ion beam analysis." In The fifteenth international conference on the application of accelerators in research and industry. AIP, 1999. http://dx.doi.org/10.1063/1.59282.

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Klatt, Ch, B. Hartmann, and S. Kalbitzer. "Accelerator limitations to ion beam analysis." In The fourteenth international conference on the application of accelerators in research and industry. AIP, 1997. http://dx.doi.org/10.1063/1.52540.

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Respaldiza, Miguel A., and Francisco J. Ager. "Ion beam analysis techniques in interdisciplinary applications." In Experimental nuclear physics in europe: Facing the next millennium. AIP, 1999. http://dx.doi.org/10.1063/1.1301836.

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Reports on the topic "Ion Beam Analysis (IBA)"

1

Revesz, Peter, and Michael O. Thompson. Next Generation Ion Beam Analysis. Fort Belvoir, VA: Defense Technical Information Center, August 1996. http://dx.doi.org/10.21236/ada316736.

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Kramer, Edward J. Ion Beam Analysis of Diffusion in Polymer Glasses. Fort Belvoir, VA: Defense Technical Information Center, August 1989. http://dx.doi.org/10.21236/ada212339.

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Berning, Paul R., and Andrus Niiler. Particle Surface Layer Characterization Using Ion Beam Analysis. Fort Belvoir, VA: Defense Technical Information Center, August 1996. http://dx.doi.org/10.21236/ada313848.

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Tegtmeier, Eric, Mary Hill, Daniel Rios, and Juan Duque. Focused Ion Beam analysis of non radioactive samples. Office of Scientific and Technical Information (OSTI), February 2021. http://dx.doi.org/10.2172/1766960.

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Kulp, William D., and III. Development of Ion Beam Analysis Techniques for Archeological Research. Fort Belvoir, VA: Defense Technical Information Center, May 1991. http://dx.doi.org/10.21236/ada245647.

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Nastasi, M. Ion beam analysis and modification of thin-film, high-temperature superconductors. Office of Scientific and Technical Information (OSTI), October 1989. http://dx.doi.org/10.2172/5658129.

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D.G. Whyte. Dynamics of Plasma-Surface Interactions using In-situ Ion Beam Analysis. Office of Scientific and Technical Information (OSTI), July 2009. http://dx.doi.org/10.2172/959136.

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Rosenberg, Beth Ellen. Analysis of Heavy-Ion Beam Images and Comparison to RetardingPotential Analyzer Measurements. Office of Scientific and Technical Information (OSTI), August 2005. http://dx.doi.org/10.2172/878114.

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Wang, Lanfa. Analysis and Simulation of Beam Ion Instability in ILC Damping Ring with Multi-gas Species. Office of Scientific and Technical Information (OSTI), October 2012. http://dx.doi.org/10.2172/1053807.

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Wu, Qiong, B. Xiao, S. De Silva, and Z. Li. Higher Order Multipole Analysis of Beam Crabbing Mode at 197 MHz for Electron-Ion Collider. Office of Scientific and Technical Information (OSTI), March 2024. http://dx.doi.org/10.2172/2331236.

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