Relevant bibliographies by topics / InxGa1-xN

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'InxGa1-xN'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "InxGa1-xN"

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Jeong, Myoungho, Hyo Sung Lee, Seok Kyu Han, Eun-Jung-Shin, Soon-Ku Hong, Jeong Yong Lee, Yun Chang Park, Jun-Mo Yang, and Takafumi Yao. "Microstructural Characterization of High Indium-Composition InXGa1−XN Epilayers Grown on c-Plane Sapphire Substrates." Microscopy and Microanalysis 19, S5 (August 2013): 145–48. http://dx.doi.org/10.1017/s143192761301252x.

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AbstractThe growth of high-quality indium (In)-rich InXGa1−XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1−XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1−XN layers. Composition modulations were observed in the In-rich InXGa1−XN layers with various In compositions. The In composition modulation in the InXGa1−XN alloys formed in samples with In compositions exceeding 47%. The misfit strain between the InGaN layer and the GaN buffer retarded the composition modulation, which resulted in the formation of modulated regions 100 nm above the In0.67Ga0.33N/GaN interface. The composition modulations were formed on the specific crystallographic planes of both the {0001} and {0114} planes of InGaN.
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Manzoor, Habib Ullah, Aik Kwan Tan, Sha Shiong Ng, and Zainuriah Hassan. "Carrier Density and Thickness Optimization of InxGa1-xN Layer by Scaps-1D Simulation for High Efficiency III-V Solar CelL." Sains Malaysiana 51, no. 5 (May 31, 2022): 1567–76. http://dx.doi.org/10.17576/jsm-2022-5105-24.

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In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 £ x £ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxGa1-xN layer's thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 µm and 1015 to 1020 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p- and n-layers for this In0.6Ga0.4N p-n junction solar cell are 0.01 (1020) and 1.50 μm (1019 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer's thickness and carrier density of the top p-InxGa1-xN layer than the bottom n-InxGa1-xN layer. Besides that, the results also demonstrated that thinner p-InxGa1-xN layer with higher carrier density offers better conversion efficiency.
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Song, Juan, Zijiang Luo, Xuefei Liu, Ershi Li, Chong Jiang, Zechen Huang, Jiawei Li, Xiang Guo, Zhao Ding, and Jihong Wang. "The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation." Crystals 10, no. 12 (December 19, 2020): 1159. http://dx.doi.org/10.3390/cryst10121159.

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In this paper, the structure and photoelectric characteristics of zincblende InxGa1−xN alloys are systematically calculated and analyzed based on the density functional theory, including the lattice constant, band structure, distribution of electronic states, dielectric function, and absorption coefficient. The calculation results show that with the increase in x, the lattice constants and the supercell volume increase, whereas the bandgap tends to decrease, and InxGa1−xN alloys are direct band gap semiconductor materials. In addition, the imaginary part of the dielectric function and the absorption coefficient are found to redshift with the increase in indium composition, expanding the absorption range of visible light. By analyzing the lattice constants, polarization characteristics, and photoelectric properties of the InxGa1−xN systems, it is observed that zincblende InxGa1−xN can be used as an alternative material to replace the channel layer of wurtzite InxGa1−xN heterojunction high electron mobility transistor (HEMT) devices to achieve the manufacture of HEMT devices with higher power and higher frequency. In addition, it also provides a theoretical reference for the practical application of InxGa1−xN systems in optoelectronic devices.
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Lin, Yu-Chung, Ikai Lo, Cheng-Da Tsai, Ying-Chieh Wang, Hui-Chun Huang, Chu-An Li, Mitch M. C. Chou, and Ting-Chang Chang. "Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs." Nanomaterials 13, no. 13 (June 23, 2023): 1922. http://dx.doi.org/10.3390/nano13131922.

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Red, green, and blue light InxGa1−xN multiple quantum wells have been grown on GaN/γ-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.
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Han, Li Jun, Bin Feng Ding, and Guo Man Lin. "The Optical and Structural Properties of InxGa1-XN/GaN Multiple Quantum Wells by Metal Organic Chemical Vapor Deposition." Advanced Materials Research 535-537 (June 2012): 1270–74. http://dx.doi.org/10.4028/www.scientific.net/amr.535-537.1270.

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The structural and optical properties of InxGa1-xN/GaN multi-quantum wells (MQWs) grown on sapphire are discussed. Two kinds of InxGa1-xN/GaN MQWs with same period and different single cycle thickness and different growth temperature of MQWs are selected. Firstly, from the result of SRXRD and RBS/C, we can estimate that indium content of InxGa1-xN /GaN MQWs is 0.033 and 0.056, the single cycle thickness of MQWs is 13.04nm and 15.86nm respectively. Secondly the PL results indicate the optical properties of InxGa1-xN/GaN MQWs. Finally, we find indium content decreasing with increasing growth temperature of MQWs and the emission intensity reducing with temperature increasing, the emission optical peak position versus temperature show the “S-shaped” character. All these experimental results testify the material design of InxGa1-xN/GaN MQWs will have potential applications in spectral LED.
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Wu, Ren Tu Ya, and Qi Zhao Feng. "Polaronic Effects in Wurtzite InxGa1-xN/GaN Parabolic Quantum Well." Advanced Materials Research 629 (December 2012): 145–51. http://dx.doi.org/10.4028/www.scientific.net/amr.629.145.

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The energy levels of polaron in a wurtzite InxGa1-xN/GaN parabolic quantum well are investigated by adopting a modified Lee-Low-Pines variational method. The ground state energy, the transition energy and the contributions of different branches of optical phonon modes to the ground state energy as functions of the well width are given. The effects of the anisotropy of optical phonon modes and the spatial dependence effective mass, dielectric constant, phonon frequency on energy levels are considered in calculation. In order to compare, the corresponding results in zinc-blende parabolic quantum well are given. The results indicate that the contributions of the electron-optical phonon interaction to ground state energy of polaron in InxGa1-xN/GaN is very large, and make the energy of polaron reduces. For a narrower quantum well，the contributions of half-space optical phonon modes is large , while for a wider one, the contributions of the confined optical phonon modes are larger. The ground state energy and the transition energy of polaron in wurtzite InxGa1-xN/GaN are smaller than that of zinc-blende InxGa1-xN/GaN, and the contributions of the electron-optical phonon interaction to ground state energy of polaron in wurtzite InxGa1-xN/GaN are greater than that of zinc-blende InxGa1-xN/GaN. The contributions of the electron-optical phonon interaction to ground state energy of polaron in wurtzite InxGa1-xN/GaN (about from 22 to 32 meV) are greater than that of GaAs/AlxGa1-xAs parabolic quantum well (about from 1.8 to 3.2 meV). Therefore, the electron-optical phonon interaction should be considered for studying electron state in InxGa1-xN/GaN parabolic quantum well.
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Kaysir, Md Rejvi, and Rafiqul Islam. "Theoretical Charge Control Investigations in InN-Based Quantum Well Double Heterostructure High Electron Mobility Transistors (QW-DHEMTs)." Advanced Materials Research 403-408 (November 2011): 52–58. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.52.

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In this paper, charge control mechanism and carrier features have been precisely investigated in InxGa1-xN/InN/InxGa1-xN based quantum-well double heterostructure high electron mobility transistors (QW-DHEMTs). A study of charge control in the InxGa1-xN/InN/InxGa1-xN structure is performed by self-consistently solving Schrödinger equation in conjunction with Poisson’s equation taking into account the spontaneous and piezoelectric polarization effects. The potential profile and the distribution of electron density in the channel as a function of gate voltage are investigated here. A large conduction band offset of about 2.2eV is obtained for the proposed device for In content x=0.05, which ensure better carrier confinement and higher sheet charge density. The influence of In composition(x) and doping concentration of InxGa1-xN upper barrier on sheet charge density and carrier distributions in channel is also presented. This analysis provides a platform to investigate the InN based QW-DHEMTs and to optimized their design.
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Tsai, ChengDa, Ikai Lo, YingChieh Wang, ChenChi Yang, HongYi Yang, HueiJyun Shih, HuiChun Huang, Mitch M. C. Chou, Louie Huang, and Binson Tseng. "Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy." Crystals 9, no. 6 (June 14, 2019): 308. http://dx.doi.org/10.3390/cryst9060308.

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Indium-incorporation with InxGa1-xN layers on GaN-microdisks has been systematically studied against growth parameters by plasma-assisted molecular beam epitaxy. The indium content (x) of InxGa1-xN layer increased to 44.2% with an In/(In + Ga) flux ratio of up to 0.6 for a growth temperature of 620 °C, and quickly dropped with a flux ratio of 0.8. At a fixed In/(In + Ga) flux ratio of 0.6, we found that the indium content decreased as the growth temperature increased from 600 °C to 720 °C and dropped to zero at 780 °C. By adjusting the growth parameters, we demonstrated an appropriate InxGa1-xN layer as a buffer to grow high-indium-content InxGa1-xN/GaN microdisk quantum wells for micro-LED applications.
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Humayun, M. A., M. A. Rashid, F. Malek, A. Yusof, F. S. Abdullah, and N. B. Ahmad. "A Comparative Study of Confined Carrier Concentration of Laser Using Quantum well and Quantum Dot in Active Layer." Advanced Materials Research 701 (May 2013): 188–91. http://dx.doi.org/10.4028/www.scientific.net/amr.701.188.

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This paper presents a comparative analysis of some of the important characteristics of the carriers of quantum well and quantum dot based laser. Among the characteristics of the carriers, confined carrier concentrations in the gain medium as well as the carrier concentrations at the threshold have been studied extensively by using InxGa1-xN based quantum well and InxGa1-xN based quantum dot in the active layer of the laser structure. The numerical results obtained are compared to investigate the superiority of the quantum dot over quantum well. It is ascertained from the comparison results that InxGa1-xN based quantum dot provides higher density of confined carrier and lower level of carrier concentration required for lasing action. This paper reports the enhancement of confined carrier density and minimization of carrier concentration at threshold of laser using InxGa1-xN based quantum dot as the active layer material. Hence, it is revealed that better performances of lasers have been obtained using InxGa1-xN based quantum dot than that of quantum well in the active medium of the device structure.
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Hu, Yan-Ling, Yuqin Zhu, Huayu Ji, Qingyuan Luo, Ao Fu, Xin Wang, Guiyan Xu, et al. "Fabrication of InxGa1−xN Nanowires on Tantalum Substrates by Vapor-Liquid-Solid Chemical Vapor Deposition." Nanomaterials 8, no. 12 (November 29, 2018): 990. http://dx.doi.org/10.3390/nano8120990.

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InxGa1−xN nanowires (NWs) have drawn great attentions for their applications in optoelectronic and energy conversion devices. Compared to conventional substrates, metal substrates can offer InxGa1−xN NW devices with better thermal conductivity, electric conductivity, and mechanic flexibility. In this article, InxGa1−xN NWs were successfully grown on the surface of a tantalum (Ta) substrate via vapor-liquid-solid chemical vapor deposition (VLS-CVD), as characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), scanning and transmission electron microscope (STEM), and photoluminescence spectroscopy (PL). It was found that the surface pretreatment of Ta and the composition of metallic catalysts played important roles in the formation of NWs. A dimpled nitrided Ta surface combined with a catalyst of nickle is suitable for VLS-CVD growth of the NWs. The obtained InxGa1−xN NWs grew along the [1100] direction with the presence of basal stacking faults and an enriched indium composition of ~3 at.%. The successful VLS-CVD preparation of InxGa1−xN nanowires on Ta substrates could pave the way for the large-scale manufacture of optoelectronic devices in a more cost-effective way.
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Dissertations / Theses on the topic "InxGa1-xN"

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Graber, Andreas. "Über die Molekularstrahlepitaxie von InxGa1-xN-Heterostrukturen und deren optische Charakterisierung." [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=959369481.

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Correia, Maria do Rosário Pimenta. "Estudos de transições electrónicas e vibracionais em filmes finos de InxGa1-xN." Doctoral thesis, Universidade de Aveiro, 2005. http://hdl.handle.net/10773/2662.

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Os semicondutores baseados no InxGa1-xN são amplamente utilizados em dispositivos emissores de luz num conjunto diverso de novas aplicações tecnológicas. O conhecimento das propriedades físicas deste material tem progredido a um ritmo mais lento do que a tecnologia. No entanto, para que se concebam dispositivos no domínio da optoelectrónica adequados a necessidades específicas, é essencial adquirir um conhecimento profundo sobre a física fundamental deste sistema. O presente trabalho de dissertação teve como objectivo fundamental o estudo das propriedades vibracionais da liga semicondutora de InxGa1-xN, com recurso à técnica de dispersão de Raman. Os filmes de InxGa1-xN que se caracterizaram foram crescidos epitaxialmente, por Deposição Química em Fase de Vapor, utilizando um substrato de GaN/safira. Combinando as diferentes técnicas de caracterização, óptica (espectroscopia Raman, Fotoluminescência e Absorção) e estrutural (Microscopia Electrónica de Varrimento, Espectrometria de Dispersão de Rutherford e Difracção de Raios X), foi possível separar, com sucesso, os efeitos da tensão e da composição na frequência do fonão A1(LO) do InxGa1-xN. Consequentemente, foram determinados os respectivos potenciais de deformação e estabeleceu-se a dependência da frequência do fonão A1(LO) em função da composição da liga. O processo de relaxação da rede do InxGa1-xN, ao longo da direcção de crescimento, foi investigado, num conjunto de amostras sujeitas a um desbaste químico controlado, com recurso à espectroscopia Raman. Este estudo permitiu consolidar toda a interpretação dos resultados experimentais relativos à frequência e à forma espectral do fonão A1(LO). Paralelamente ao estudo da dinâmica de rede, e em resultado deste ter implicado a identificação das energias de absorção e de emissão associadas a transições electrónicas, foi identificada e caracterizada a emissão a 1.88 eV observada numa amostra de do InxGa1-xN parcialmente relaxada. Finalmente foi realizado um estudo, com vista a avaliar a receptividade da matriz de InxGa1-xN à introdução, por implantação iónica, de iões de terrasraras, em particular o Er3+. Em consequência foi investigada a luminescência a ~1.5 μm, associada à transição intraiónica do estado excitado (4I13/2 ) para o estado fundamental (4I15/2). Os resultados mostraram que a incorporação de iões na rede de InxGa1-xN por implantação iónica não é o método mais adequado.
Semiconductors based on InxGa1-xN are widely used in light emitting devices, in a novel array of technological applications. The knowledge of the fundamental physical properties of this material has been progressing at a slower rate than the fast paced technological development. However, in order to develop devices tailored to specific needs, a deep knowledge of the physics of this system is mandatory. The main purpose of the research work was the study of the vibrational properties of the semiconductor alloy of InxGa1-xN, through the use of Raman dispersion technique. The InxGa1-xN films that were characterized were epitaxially grown by chemical vapour deposition, over a GaN/sapphire subtract. Through the combined use of different characterization techniques, optical (Raman spectroscopy, Photoluminescence and Absorption) and structural (Scanning Electron Microscopy, Rutherford Backscattering Spectrometry and X-Ray Diffraction), it was possible to successfully separate the effects of strain and composition on the frequency of the InxGa1-xN A1 (LO) phonon. Consequently, the deformation potentials, concerning the A1 (LO) phonon, were determined, and the phonon frequency dependency on the alloy composition was established. The relaxation process of the InxGa1-xN lattice, along the growth direction, was studied by the use of Raman spectroscopy on a set of samples that had suffered a chemically controlled etching. This study enabled to consolidate the interpretation of all the experimental results concerning the frequency and spectral shape of A1 (LO) phonon. Apart of the study of lattice dynamics, and since this study required that absorption and emission energies related to electronic transitions were identified, the emission at 1.88 eV, on a partially relaxed sample, was observed and characterized. Finally, a study was developed aiming to evaluate the receptivity, of the InxGa1-xN matrix, to the incorporation, by means of ionic implantation, of rareearth ions, in particular of Er3+. Therefore, luminescence at ~1.5 μm, linked to the intraionic transition of excited state (4I13/2 ) to fundamental state ( 4I15/2), was also studied. Results have shown that ion incorporation by an implantation process is not the most suitable for InxGa1-xN lattice.
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Dridi, Zoulikha. "Les propriétés structurales et électroniques des alliages AlxGa1-xN, InxGa1-xN, et InxAl1-xN : étude par la méthode ab initio des ondes planes augmentées avec linéarisation et potentiel total." Caen, 2003. http://www.theses.fr/2003CAEN2076.

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En utilisant la méthode des ondes planes augmentées avec linéarisation (FP-LAPW), nous avons étudié les propriétés structurales et électroniques des alliages ternaires AlxGa1-xN, InxGa1-xN et InxAl1-xN cubiques et wurtzites. Nous avons utilisé les structures de Landau-Lifshitz, la chalcopyrite et la luzonite, pour modéliser les alliages cubiques, et une super-cellule de 32 atomes pour les alliages wurtzites. L'analyse de nos résultats en comparaison avec d'autres calculs montre une forte dépendance du facteur de courbure avec le paramètre du réseau. On remarque aussi que les résultats sont influencés par le model structural utilisé pour les alliages ternaires. Finalement, nous avons étudié le comportement de l'énergie du gap des binaires et des ternaires dans la structure wurtzite sous l'effet de la pression. Nous en avons déduit le comportement des coefficients de pression avec la concentration, et la variation du facteur de courbure du gap avec la pression.
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Yen-Jung, Chen. "Electron transport in InxGa1-xN films." 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2401200721431000.

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Chen, Yen-Jung, and 陳衍榮. "Electron transport in InxGa1-xN films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/51449056456284874172.

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碩士
國立臺灣大學
物理研究所
95
This thesis focuses on electron transport properties of InxGa1-xN thin films. The transport measurements were performed on InxGa1-xN thin films over a wide temperature range (12 K< T < 315 K). The four independent van der Pauw measurements, each with 90∘rotation of contact configuration to measure the resistance of , were used. These samples show a tendency from semiconductor to metal with increasing x of InxGa1-xN , indicating InN electron transport properties are better than GaN. The resistivity of InN was best fitted with Block T^5 law. This supports the high In composition films can be considered as degenerate electron system in which the Fermi level is much higher than conduction band over the whole temperature range. Taking this characteristic into consideration, in this thesis the phenomenon of the electron-acoustic phonon interactions were investigated under the low temperature condition.
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Shih-Kai, Lin. "Electron transport in In-rich InxGa1-xN films." 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2807200516452300.

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Lin, Shih-Kai, and 林士凱. "Electron transport in In-rich InxGa1-xN films." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/17728421458804960752.

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碩士
國立臺灣大學
物理研究所
93
This thesis focuses on electron transport properties in InxGa1−xN (x =1, 0.98, 0.92, 0.8, 0.7) thin films. We have performed transport measurements on InxGa1−xN thin films over a wide temperature range. We observed that within experimental error, the carrier densities are temperature independent. Besides, the resistivities, combined with the carrier densities, show a tendency of transition from metal to semiconductor with increasing Ga composition. The calculated mobility shows that for metallic like samples (InxGa1−xN with x ≥0.92), the dominant scattering mechanism is the imperfection scattering over the whole temperature range. We also showed that Bloch T5 curves fit very well the resistivities of samples InxGa1−xN with x =1, 0.98, 0.92, once again supporting that very high In composition InxGa1−xN films can be considered as degenerate electron systems in which the Fermi level is much higher than conduction-band bottom over the whole measurement range.
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Chih-CiaoYang and 楊智喬. "Design, Fabrication and Characterization for InXGa1-XN-based Photovoltaics." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/55161810338819890241.

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Lin, En-Hung, and 林恩宏. "Crystallization study of InxGa1-xN epitaxial layers on sapphire." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/61374378585469849038.

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碩士
國立臺灣海洋大學
光電科學研究所
94
We have performed the polarization modulation near-field scanning optical microscopy (PM-NSOM) measurements to investigate the correlation between crystalline and optical properties of InGaN epilayers and crystalline quality of In-rich InGaN epilayers. The PM-NSOM results show the nanoscale domain-like structures which exhibit good correspondence to the morphological images by SEM measurement. It is found the In-rich regions formed at the periphery of the hexagonal pits. These In-rich regions show good crystallinity and high recombination efficiency. We point out that the combination of PM-NSOM and NSOM-PL is a powerful tool for investigating the correspondence between the local morphology and the optical properties of the nanostructures. The crystalline properties of In-rich InGaN films with Ga concentration varying from 0% to over 30% were investigated by PM-NSOM measurements. PM-NSOM measurements showed that the crystallinity of InGaN films were strongly dependence on the Ga concentration. The average crystallinity of InGaN film was found to decrease with the increase in Ga concentration of InGaN films. On the other hand, the RMS crystallinity exhibited a different dependence on the Ga concentration for the In-Rich InGaN films. The RMS crystallinity of InGaN films first decreased with the increasing Ga concentration, reached a minimum for the InGaN film with 8% Ga concentration, and then increased again with increasing Ga concentration. Surprisingly, the RMS crystallinity of InGaN films shows the same trend in the dependence of PL intensity on the Ga concentration in InGaN films. It was concluded that for the InGaN films with different Ga content grown at the same temperature, the RMS crystallinity of the epifilms accounts for PL emission efficiency of the epilayers.
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傅如彬. "Studies on the Ultrafast Carrier Dynamics of InxGa1-xN." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/17820177757275753166.

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Book chapters on the topic "InxGa1-xN"

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Bain, L. E., A. M. Hosalli, S. M. Bedair, T. Paskova, and A. Ivanisevic. "Molecular Interactions on InxGa1−xN." In MEMS and Nanotechnology, Volume 5, 109–14. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00780-9_14.

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Dahal, R., J. Y. Lin, H. X. Jiang, and J. M. Zavada. "Er-Doped GaN and InxGa1-xN for Optical Communications." In Topics in Applied Physics, 115–57. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-2877-8_5.

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Pramita, Nath, and Biswas Abhijit. "Radiation-Resilient GaN/InxGa1-xN Multi-junction Solar Cells with Varying in Contents." In Lecture Notes in Electrical Engineering, 155–67. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-9154-6_16.

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Bandyopadhyay, Dipan, Apu Mistry, and JoyeetaBasu Pal. "Study on Enhancement of Optical Output of InxGa1-xN/GaN Parabolic Quantum Well LEDs, Varying Indium Compositions, and Well Widths." In Proceedings of International Conference on Industrial Instrumentation and Control, 343–49. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7011-4_34.

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Bera, Partha Pratim, Siddhartha Panda, and Dipankar Biswas. "Investigations on: How the Band Lineups, Band Offsets and Photoluminescences of an InxGa1−xN/GaN Quantum Well change with Biaxial Strain." In Physics of Semiconductor Devices, 663–65. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_169.

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Routray, Soumyaranjan, and Trupti Lenka. "III-Nitride Nanowires: Future Prospective for Photovoltaic Applications." In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.95011.

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Photovoltaic (PV) technology could be a promising candidate for clean and green source of energy. The nanowire technology provides extra mileage over planar solar cells in every step from photon absorption to current generation. Indium Gallium Nitride (InxGa1-xN) is a recently revised material with such a bandgap to absorb nearly whole solar spectrum to increase the conversion efficiency copiously. One of the major technological challenge is in-built polarization charges. This chapter highlights the basic advantageous properties of InxGa 1−xN materials, its growth technology and state-of-the-art application towards PV devices. The most important challenges that remain in realizing a high-efficiency InxGa 1−xN PV device are also discussed. III-Nitride nanowires are also explored in detail to overcome the challenges. Finally, conclusions are drawn about the potential and future aspect of InxGa 1−xN material based nanowires towards terrestrial as well as space photovoltaic applications.
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Piscopiello, E., M. Catalano, M. Vittori Antisari, A. Passaseo, R. Cingolani, M. Berti, and A. V. Drigo. "Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD." In Microscopy of Semiconducting Materials 2001, 285–88. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-60.

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Conference papers on the topic "InxGa1-xN"

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Alexandrov, Dimiter, and Shawn Skerget. "Tunnel optical radiation in InxGa1−xN." In INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4865658.

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Swain, Muralidhar, Bijay Kumar Sahoo, and Sushant Kumar Sahoo. "Pyroelectric effect in InxGa1-xN/GaN heterostructure." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113308.

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Ma, Jinlong, Baoling Huang, Wu Li, and Xiaobing Luo. "Intrinsic Thermal Conductivity of Wurtzite AlxGa1-xN, InxGa1-xN and InxAl1-xN From First-Principles Calculation." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48032.

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The thermal conductivities of the alloys of wurtzite AlN, GaN and InN are usually analyzed with the virtual crystal model based on the values of the constituent compounds. However, latest experiments and calculations reveal that the thermal conductivity of wurtzite InN is about three times larger than the previously used value. Thus it is necessary to reanalyze the thermal conductivities of these alloys. In this work, the intrinsic thermal conductivities of AlxGa1−xN, InxGa1−xN and InxAl1−xN are calculated with first-principles calculations along with the virtual crystal treatment. It is found that the thermal conductivities of these alloys are strongly suppressed even after a small amount of alloying. For instance, the in-plane and out-of-plane thermal conductivities of In0.99Ga0.01 N are 66 Wm−1K−1 and 76 Wm−1K−1 respectively, while they are 40 Wm−1K−1 and 48 Wm−1 K−1 for In0.99Al0.01 N, compared with the corresponding values of 130 Wm−1 K−1 and 145 Wm−1 K−1 for bulk wurtzite InN. When the fraction x varies from 0.2 to 0.8, the thermal conductivities of the alloys do not change much. Additionally, the distribution of mean free path indicates that the size effect can persist up to 10μm for both pure compounds and their alloys at room temperature.
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Segura-Ruiz, J., M. Gómez-Gómez, N. Garro, G. Martínez-Criado, A. Cantarero, C. Denker, J. Malindretos, and A. Rizzi. "Physical properties and applications of InxGa1−xN nanowires." In 7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES: (LDSD 2011). AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4878288.

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Islam, Md Sherajul, A. K. M. Zillur Rahman, Md A. R. Chowdhury, Md Rafiqul Islam, and Ashraful G. Bhuiyan. "InxGa1-xN based multi junction concentrator solar cell." In 2008 International Conference on Electrical and Computer Engineering. IEEE, 2008. http://dx.doi.org/10.1109/icece.2008.4769276.

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Moon, Won Ha, Jong Pa Hong, Soo Min Lee, and Dong Woohn Kim. "Theoretical study of phase stability of InxGa1-xN alloys." In SPIE Proceedings, edited by Pavel Tománek, Miroslav Hrabovský, Miroslav Miler, and Dagmar Senderákova. SPIE, 2006. http://dx.doi.org/10.1117/12.675674.

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Yildiz, A., S. B. Lisesivdin, S. Acar, and M. Kasap. "Mole Fraction Dependence of Mobility in InxGa1−xN Alloys." In SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP, 2007. http://dx.doi.org/10.1063/1.2733411.

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Alexandrov, Dimiter, Rozalina Dimitrrova, K. Scott Butcher, Marie Wintrebert-Fouquet, and Richard Perks. "Field Effect Transistor on Hetero-Structure GaN/InxGa1-xN." In 2006 Canadian Conference on Electrical and Computer Engineering. IEEE, 2006. http://dx.doi.org/10.1109/ccece.2006.277693.

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Islam, Md Rafiqul, M. A. Rayhan, M. E. Hossain, Ashraful G. Bhuiyan, M. R. Islam, and A. Yamamoto. "Projected Performance of InxGa1-xN-Based Multijunction Solar Cells." In 2006 International Conference on Electrical and Computer Engineering. IEEE, 2006. http://dx.doi.org/10.1109/icece.2006.355335.

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Zvanut, M. E., W. R. Willoughby, and D. D. Koleske. "The source of holes in p-type InxGa1-xN films." In SPIE OPTO, edited by Jen-Inn Chyi, Yasushi Nanishi, Hadis Morkoç, Joachim Piprek, Euijoon Yoon, and Hiroshi Fujioka. SPIE, 2013. http://dx.doi.org/10.1117/12.2002569.

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Reports on the topic "InxGa1-xN"

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Liliental-Weber, Zuzanna, D. N. Zakharov, K. M. Yu, III Ager, Walukiewicz J. W., Haller W., Lu E. E., Schaff H., and W. J. Compositional Modulation in InxGa1-xN. Fort Belvoir, VA: Defense Technical Information Center, May 2008. http://dx.doi.org/10.21236/ada513536.

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