Relevant bibliographies by topics / Interfacial thermal conductance

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Interfacial thermal conductance'

Author: Grafiati
Published: 2 November 2024

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Journal articles on the topic "Interfacial thermal conductance"

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Green, Andrew J., and Hugh H. Richardson. "Solute Effects on Interfacial Thermal Conductance." MRS Proceedings 1543 (2013): 151–57. http://dx.doi.org/10.1557/opl.2013.677.

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ABSTRACTThe thermal conductance of a gold/water interface has been found to change as a function of the surrounding’s adhesion energy. We measure the thermal conductance of a lithographically prepared gold nanowire with a thin film nanoscale thermal sensor composed of AlGaN:Er3+. The temperature of the nanowire is measured as a function of incident laser intensity. The slope of this plot is inversely proportional to the thermal conductance of the nanoparticle/surrounding’s interface. We show that the conductance of the nanoparticle/water interface increases with the molality of the solution. This was tested with multiple solutes including NaCl, and D-Glucose. The interfacial conductance of pure water is reported to be 44 MW/m2K and the conductance saturates to 100 MW/m2K at a molality of 0.21 m.
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Rajabpour, Ali, Saeed Bazrafshan, and Sebastian Volz. "Carbon-nitride 2D nanostructures: thermal conductivity and interfacial thermal conductance with the silica substrate." Physical Chemistry Chemical Physics 21, no. 5 (2019): 2507–12. http://dx.doi.org/10.1039/c8cp06992a.

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The rate of heat dissipation from a carbon-nitride 2D nanostructure depends on the interfacial thermal conductance with its substrate. It was found that a structure with higher thermal conductivity, has a lower value of interfacial thermal conductance with the silica substrate.
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Yang, Wu Lin, Kun Peng, Jia Jun Zhu, De Yi Li, and Ling Ping Zhou. "Numerical Modeling of Thermal Conductivity of Diamond Particle Reinforced Aluminum Composite." Advanced Materials Research 873 (December 2013): 344–49. http://dx.doi.org/10.4028/www.scientific.net/amr.873.344.

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In the present work, the finite element method is employed to predict the effective thermal conductivity of diamond particle reinforced aluminum composite. The common finite element commercial software ANSYS is used to for this numerical analysis. A body-centered cubic particle arrangement model are constructed to simulate the microstructure of the composite with 60 vol.% diamond. The effect of particle size and inhomogeneous interfacial conductance on the thermal conductivity of diamond particles reinforced aluminum composite is investigated. Cubo-octahedral particles are assumed and interfacial thermal conductance between different diamond faces and aluminum matrix is implemented by real constants of contact element. The results show that the numerical results using present model agree reasonably well with the experimentation. Taking into consideration the interfacial thermal conductance, the influence of particle size on total thermal conductivity of composite is obvious, the larger size particles tend to meet requirement of the high thermal conductivity of composite. Fitting the experimental result with the inhomogeneous interfacial thermal conductance model, the evolution of the composite thermal property is profound studied.
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Fan, Hang, Kun Zhang, Guansong He, Zhijian Yang, and Fude Nie. "Ab initio determination of interfacial thermal conductance for polymer-bonded explosive interfaces." AIP Advances 12, no. 6 (June 1, 2022): 065005. http://dx.doi.org/10.1063/5.0094018.

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Understanding the thermal transport in polymer-bonded explosives (PBXs) is critical for enhancing the safety and reliability during PBX design, especially in the absence of effective experimental measurements. In this work, we rigorously investigated the phonon properties of 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) and polyvinylidene fluoride (PVDF) and calculated the interfacial thermal conductance using an ab initio approach. The diffuse mismatch model and anharmonic inelastic model were adopted to examine the interfacial thermal conductance as a function of temperature for the TATB–PVDF interface. Our calculation results indicate that low-frequency phonon modes and the two-phonon process play dominant roles in the thermal transport at interfaces. In contrast, high-order phonon processes involving three to eight phonons accounted for around 8% of the interfacial thermal conductance at the TATB–PVDF interface. Phonon properties, such as the velocity and degree of phonon density overlap, are discussed for the TATB–PVDF and 1,3,5,7-tetranitro-1,3,5,7-tetraazacyclooctane (HMX)–PVDF interfaces to estimate the interfacial thermal conductance of PBXs. This study provides a theoretical explanation for the establishment of a research method for PBX thermal transport.
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Bai, Guang Zhao, Wan Jiang, G. Wang, Li Dong Chen, and X. Shi. "Effective Thermal Conductivity of MoSi2/SiC Composites." Materials Science Forum 492-493 (August 2005): 551–54. http://dx.doi.org/10.4028/www.scientific.net/msf.492-493.551.

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Thermal conductivity of as-prepared MoSi2/SiC composites has been determined by Laser Flash method. Interfacial thermal conductance for composites with 100nm SiC and with 0.5µm has been determined by using effective medium theory. The results of interfacial thermal conductance exhibit that both the inclusion size and the clustering of the inclusions play an important role in determining composite thermal conductivity.
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Wu, Shuang, Jifen Wang, Huaqing Xie, and Zhixiong Guo. "Interfacial Thermal Conductance across Graphene/MoS2 van der Waals Heterostructures." Energies 13, no. 21 (November 9, 2020): 5851. http://dx.doi.org/10.3390/en13215851.

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The thermal conductivity and interface thermal conductance of graphene stacked MoS2 (graphene/MoS2) van der Waals heterostructure were studied by the first principles and molecular dynamics (MD) simulations. Firstly, two different heterostructures were established and optimized by VASP. Subsequently, we obtained the thermal conductivity (K) and interfacial thermal conductance (G) via MD simulations. The predicted Κ of monolayer graphene and monolayer MoS2 reached 1458.7 W/m K and 55.27 W/m K, respectively. The thermal conductance across the graphene/MoS2 interface was calculated to be 8.95 MW/m2 K at 300 K. The G increases with temperature and the interface coupling strength. Finally, the phonon spectra and phonon density of state were obtained to analyze the changing mechanism of thermal conductivity and thermal conductance.
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Liu, Yang, Wenhao Wu, Shixian Yang, and Ping Yang. "Interfacial thermal conductance of graphene/MoS2 heterointerface." Surfaces and Interfaces 28 (February 2022): 101640. http://dx.doi.org/10.1016/j.surfin.2021.101640.

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Yang, Wei, Kun Wang, Yongsheng Fu, Kun Zheng, Yun Chen, and Yongmei Ma. "Interfacial Thermal Conductance between Alumina and Epoxy." Journal of Physics: Conference Series 2109, no. 1 (November 1, 2021): 012018. http://dx.doi.org/10.1088/1742-6596/2109/1/012018.

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Abstract Interfacial thermal conductance (ITC) of inorganic/epoxy interface is regarded as one of the most significant factors in determining thermal transport performance of epoxy composite. Here, ITC between alumina and epoxy was experimentally investigated by time-domain thermoreflectance (TDTR) method. The results show that the ITC is effectively increased from 9.0 MW m-2 K-1 for non-treated alumina/epoxy interfaces to 26.3 MW m-2 K-1 for plasma treated interfaces. This work sheds some light on design and application for thermally conductive composites.
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Xu, Ke, Jicheng Zhang, Xiaoli Hao, Ning Wei, Xuezheng Cao, Yang Kang, and Kun Cai. "Interfacial thermal conductance of buckling carbon nanotubes." AIP Advances 8, no. 6 (June 2018): 065116. http://dx.doi.org/10.1063/1.5039499.

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Zhang, Lifa, Juzar Thingna, Dahai He, Jian-Sheng Wang, and Baowen Li. "Nonlinearity enhanced interfacial thermal conductance and rectification." EPL (Europhysics Letters) 103, no. 6 (September 1, 2013): 64002. http://dx.doi.org/10.1209/0295-5075/103/64002.

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Dissertations / Theses on the topic "Interfacial thermal conductance"

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Bhatt, Hemanshu D. "Effect of interfacial thermal conductance and fiber orientation on the thermal diffusivity/conductivity of unidirectional fiber-reinforced ceramic matrix composites." Diss., This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-07282008-135034/.

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Diarra, Cheick Oumar. "Modélisation par dynamique moléculaire ab initio du transport des excitons et du transport thermique dans les semiconducteurs organiques pour la collecte d'énergie." Electronic Thesis or Diss., Strasbourg, 2024. http://www.theses.fr/2024STRAD013.

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L'exciton joue un rôle clé dans le fonctionnement des cellules solaires organiques (OSCs). Comprendre sa dynamique dans les semiconducteurs organiques est essentiel, notamment pour améliorer la longueur de diffusion, une propriété déterminante pour la performance des hétérojonctions planaires, envisagées comme une alternative plus stable aux hétérojonctions en volume (BHJ). Dans la première partie de cette thèse, nous avons développé une approche méthodologique robuste et polyvalente pour évaluer la longueur de diffusion de l'exciton dans les semiconducteurs organiques. Cette approche, basée sur AIMD-ROKS, a été validée avec succès dans le cas du polymère P3HT. Elle a également été appliquée à l'accepteur NFA O-IDTBR, révélant des longueurs de diffusion prometteuses, mais encore insuffisantes pour les hétérojonctions planaires. Dans la deuxième partie de la thèse, le transfert de chaleur dans les semiconducteurs organiques a été exploré, élément crucial pour la performance des dispositifs thermoélectriques. Ces études se sont concentrées sur le P3HT, un matériau utilisé en thermoélectricité. Dans un premier temps, la conductivité thermique au sein des chaînes de P3HT a été étudiée, révélant l'influence de la longueur des chaînes de polymère. Ensuite, les transferts de chaleur entre ces chaînes ont également été examinés
The exciton plays a central role in the functioning of organic solar cells (OSCs). Understanding its dynamics in organic semiconductors is essential, particularly to optimize the diffusion length, a key property for the performance of planar heterojunctions, which are considered as a potentially more stable alternative to bulk heterojunctions (BHJ) in certain contexts. In the first part of this thesis, we developed a robust and versatile methodological approach to evaluate the exciton diffusion length in organic semiconductors. This method, based on AIMD-ROKS, was successfully validated for the P3HT polymer. It was also applied to the NFA O-IDTBR acceptor, revealing promising diffusion lengths, though still insufficient for planar heterojunctions. The second part of the thesis explores heat transfer in organic semiconductors, a crucial element for the performance of thermoelectric devices. These studies focused on P3HT, a material used in thermoelectricity. First, the thermal conductivity within P3HT chains was studied, revealing the influence of polymer chain length. Then, heat transfers between these chains were also examined
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Sears, Matthew. "Applications of Irreversible Thermodynamics: Bulk and Interfacial Electronic, Ionic, Magnetic, and Thermal Transport." Thesis, 2011. http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-10096.

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Irreversible thermodynamics is a widely-applicable toolset that extends thermodynamics to describe systems undergoing irreversible processes. It is particularly useful for describing macroscopic flow of system components, whether conserved (e.g., particle number) or non-conserved (e.g., spin). We give a general introduction to this toolset and calculate the entropy production due to bulk and interfacial flow. We compare the entropy production and heating rate of bulk and interfacial transport, as well as interfacial charge and spin transport. We then demonstrate the power and applicability of this toolset by applying it to three systems. We first consider metal oxide growth, and discuss inconsistency in previous theory by Mott. We show, however, that Mott's solution is the lowest order of a consistent asymptotic solution, with the ion and electron concentrations and fluxes going as power series in t^-k/2, where k = 1, 2, .... We find that this gives corrections to the "parabolic growth law" that has oxide thickness going as t^1/2; the lowest order correction is logarithmic in t. We then consider the effect on spin of electric currents crossing an interface between a ferromagnet (FM) and non-magnetic material (NM). Previous theories for electrical potential and spin accumulation neglect chemical or magnetic contributions to the energy. We apply irreversible thermodynamics to show that both contributions are pivotal in predicting the spin accumulation, particularly in the NM. We also show that charge screening, not considered in previous theories, causes spin accumulation in the FM, which may be important in ferromagnetic semiconductors. Finally, we apply irreversible thermodynamics to thermal equilibration in a thin-film FM on a substrate. Recent experiments suggest that applying a thermal gradient across the length of the system causes a spin current along the thickness; this spin current is present much farther from the heat sources than expected. We find that, although the interaction between the separate thermal equilibration processes increases the largest equilibration length, thermal equilibration does not predict a length as large as the experimentally measured length; it does predict, however, a thermal gradient along the thickness that has the shape of the measured spin current.
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(10225202), Jinhyun Noh. "STRUCTURAL AND MATERIAL INNOVATIONS FOR HIGH PERFORMANCE BETA-GALLIUM OXIDE NANO-MEMBRANE FETS." Thesis, 2021.

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Beta-gallium oxide (β-Ga2O3) is an emerging wide bandgap semiconductor for next generation power devices which offers the potential to replace GaN and SiC. It has an ultra-wide bandgap (UWBG) of 4.8 eV and a corresponding Ebr of 8 MV/cm. β-Ga2O3 also possesses a decent intrinsic electron mobility limit of 250 cm2/V·s, yielding high Baliga’s figure of merit of 3444. In addition, the large bandgap of β-Ga2O3 gives stability in harsh environment operation at high temperatures.

Although low-cost large-size β-Ga2O3 native bulk substrates can be realized by melt growth methods, the unique property that (100) surface of β-Ga2O3 has a large lattice constant of 12.23 Å allows it to be cleaved easily into thin and long nano-membranes. Therefore, β-Ga2O3 FETs on foreign substrates by transferring can be fabricated and investigated before β-Ga2O3 epitaxy technology becomes mature and economical viable. Moreover, integrating β-Ga2O3 on high thermal conductivity materials has an advantage in terms of suppressing self-heating effects.

In this dissertation, structural and material innovations to overcome and improve critical challenges are summarized as follows: 1) Top-gate nano-membrane β-Ga2O3 FETs on a high thermal conductivity diamond substrate with record high maximum drain current densities are demonstrated. The reduced self-heating effect due to high thermal conductivity of the substrate was verified by thermoreflectance measurement. 2) Local electro-thermal effect by electrical bias was applied to enhance the electrical performance of devices and improvements of electrical properties were shown after the annealing. 3) Thin thermal bridge materials such as HfO2 and ZrO2 were inserted between β-Ga2O3 and a sapphire substrate to reduce self heating effects without using a diamond substrate. The improved thermal performance of the device was analyzed by phonon density of states plots of β-Ga2O3 and the thin film materials. 4) Nano-membrane tri-gate β-Ga2O3 FETs on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. 5) Using the robustness of β-Ga2O3 in harsh environments, β-Ga2O3 ferroelectric FETs operating as synaptic devices up to 400 °C were demonstrated. The result offers the potential to use the novel device for ultra-wide bandgap logic applications, specifically neuromorphic computing exposed to harsh environments.

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Book chapters on the topic "Interfacial thermal conductance"

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Choudhary, Rajesh, Aman Singh, Aditya Kumar, and Sudhakar Subudhi. "Experimental Investigations on the Thermal Contact Conductance Using Al2O3 Nanoparticles in the Interfacial Material." In Lecture Notes in Mechanical Engineering, 729–40. Singapore: Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-7827-4_57.

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Talapatra, Animesh, and Debasis Datta. "Molecular Dynamics Simulation-Based Study on Enhancing Thermal Properties of Graphene-Reinforced Thermoplastic Polyurethane Nanocomposite for Heat Exchanger Materials." In Inverse Heat Conduction and Heat Exchangers. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.86527.

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Molecular dynamics (MD) simulation-based development of heat resistance nanocomposite materials for nanoheat transfer devices (like nanoheat exchanger) and applications have been studied. In this study, MD software (Materials Studio) has been used to know the heat transport behaviors of the graphene-reinforced thermoplastic polyurethane (Gr/TPU) nanocomposite. The effect of graphene weight percentage (wt%) on thermal properties (e.g., glass transition temperature, coefficient of thermal expansion, heat capacity, thermal conductivity, and interface thermal conductance) of Gr/TPU nanocomposites has been studied. Condensed-phase optimized molecular potentials for atomistic simulation studies (COMPASS) force field which is incorporated in both amorphous and forcite plus atomistic simulation modules within the software are used for this present study. Layer models have been developed to characterize thermal properties of the Gr/TPU nanocomposites. It is seen from the simulation results that glass transition temperature (Tg) of the Gr/TPU nanocomposites is higher than that of pure TPU. MD simulation results indicate that addition of graphene into TPU matrix enhances thermal conductivity. The present study provides effective guidance and understanding of the thermal mechanism of graphene/TPU nanocomposites for improving their thermal properties. Finally, the revealed enhanced thermal properties of nanocomposites, the interfacial interaction energy, and the free volume of polymer nanocomposites are examined and discussed.
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Conference papers on the topic "Interfacial thermal conductance"

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Wang, Yingtao, Yuan Gao, Elham Easy, Eui-Hyeok Yang, Baoxing Xu, and Xian Zhang. "Thermal Conductivities and Interfacial Thermal Conductance of 2D WSe2." In 2020 IEEE 15th International Conference on Nano/Micro Engineered and Molecular System (NEMS). IEEE, 2020. http://dx.doi.org/10.1109/nems50311.2020.9265628.

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Yuksel, Anil, Edward T. Yu, Michael Cullinan, and Jayathi Murthy. "Effect of Interfacial Thermal Conductance Between the Nanoparticles." In ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/ipack2018-8212.

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Heat transport across nanostructured interfaces, such as between nanoparticles, has been of great interest for advanced thermal management. Interfacial thermal conductance, G, is central to understanding thermal heat transport between nanoparticles that have a contact point between each other as well as the surrounded medium. In this study, we show that G dominates the heat transport compared to the conduction and radiation heat transfer modes between the nanoparticles for values higher than ∼20 (MW/m2K). We also investigate the effect of radius of contact between the nanoparticles on the overall modes of heat transfer.
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Choi, Woon Ih, Kwiseon Kim, and Sreekant Narumanchi. "Molecular Dynamics Modeling of Thermal Conductance at Atomically Clean and Disordered Silicon/Aluminum Interfaces." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-65409.

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Thermal resistance between layers impedes effective heat dissipation in electronics packaging applications. Thermal conductance for clean and disordered interfaces between silicon (Si) and aluminum (Al) was computed using realistic Si/Al interfaces and classical molecular dynamics with the modified embedded atom method potential. These realistic interfaces, which include atomically clean as well as disordered interfaces, were obtained using density functional theory. At 300 K, the magnitude of interfacial conductance due to phonon-phonon scattering obtained from the classical molecular dynamics simulations was approximately five times higher than the conductance obtained using analytical elastic diffuse mismatch models. Interfacial disorder reduced the thermal conductance due to increased phonon scattering with respect to the atomically clean interface. Also, the interfacial conductance, due to electron-phonon scattering at the interface, was greater than the conductance due to phonon-phonon scattering. This suggests that phonon-phonon scattering is the bottleneck for interfacial transport at the semiconductor/metal interfaces. The molecular dynamics modeling predictions for interfacial thermal conductance for a 5 nm disordered interface between Si/Al are in-line with recent experimental data in the literature.
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Lv, Wei, and Asegun Henry. "Thermal Interface Conductance Between Aligned Polyethylene and Graphite." In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-50492.

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Molecular dynamics simulations are used to provide fundamental insights into the thermal interface resistance between aligned polyethylene chains and graphite layers using the Reactive Force Field (ReaxFF) potential[1] to describe the atomic interactions. We find that the interfacial conductance could alter more than two orders of magnitude when changing orientation of polymer fibers to graphite. This finding suggests that, by using highly stretched polymer fibers, one could then maximize the interfacial conductance to engineer high thermal conductivity polymer composites.
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Liu, Chenhan, Jian Wang, Weiyu Chen, Zhiyong Wei, Juekuan Yang, and Yunfei Chen. "Interfacial Thermal Conductance Between Carbon Nanotubes From Nonequilibrium Green’s Function Method." In ASME 2013 4th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/mnhmt2013-22094.

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In this paper, the interfacial thermal conductance between two single-wall carbon nanotubes (SWCNTs) is evaluated using the nonequilibrium Green’s function (NEGF) method. The calculation results show that, for offset parallel contact type, interfacial thermal conductance increases almost linearly with the overlap length. This is because the coupling atom number in overlap region is the main contributor to heat flow through interface. With the same overlap length, interfacial thermal conductance of the nested contact type is much higher than that of the offset parallel contact type. By comparing the phonon transmission function between the two contact types, it is found that the nested contact type has much larger transmission function than the offset parallel contact type due to more atoms involving in the interfacial coupling in the overlap region. By adjusting the chirality of SWCNTs in the offset parallel contact type, it is found that the difference of phonon spectrum can reduce interfacial thermal transfer. We also find the transmission function profiles with only different overlap length are quite similar, that is, changing in the overlap length will not change the phonon transmission probability at the interface. Moreover, acoustic phonon is the main contributor to the interfacial thermal conductance and the radical breathing mode is the vital mode of coupling modes for CNT-CNT system. The calculated results in this paper indicate that increasing the coupling atom number between CNTs would increase the heat energy transfer in CNT-based composites.
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Hopkins, Patrick E., John C. Duda, and Pamela M. Norris. "Contributions of Anharmonic Phonon Interactions to Thermal Boundary Conductance." In ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASMEDC, 2011. http://dx.doi.org/10.1115/ajtec2011-44135.

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Continued reduction of characteristic dimensions in nanosystems has given rise to increasing importance of material interfaces on the overall system performance. With regard to thermal transport, this increases the need for a better fundamental understanding of the processes affecting interfacial thermal transport, as characterized by the thermal boundary conductance. When thermal boundary conductance is driven by phononic scattering events, accurate predictions of interfacial transport must account for anharmonic phononic coupling as this affects the thermal transmission. In this paper, a new model for phononic thermal boundary conductance is developed that takes into account anharonic coupling, or inelastic scattering events, at the interface between two materials. Previous models for thermal boundary conductance are first reviewed, including the Diffuse Mismatch Model, which only consdiers elastic phonon scattering events, and earlier attempts to account for inelastic phonon scattering, namely, the Maximum Transmission Model and the Higher Harmonic Inelastic model. A new model is derived, the Anharmonic Inelastic Model, which provides a more physical consideration of the effects of inelastic scattering on thermal boundary conductance. This is accomplished by considering specific ranges of phonon frequency interactions and phonon number density conservation. Thus, this model considers the contributions of anharmonic, inelastically scattered phonons to thermal boundary conductance. This new Anharmonic Inelastic Model shows excellent agreement between model predictions and experimental data at the Pb/diamond interface due to its ability to account for the temperature dependent changing phonon population in diamond, which can couple anharmonically with multiple phonons in Pb.
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Wang, Mingkang, Diego J. Perez-Morelo, Georg Ramer, Goerges Pavlidis, Jeffrey Schwartz, Andrea Centrone, and Vladimir Aksyuk. "Nanophotonic Scanning Probes for Nanoscale Imaging of Thermal Conductivity and Interfacial Thermal Conductance." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.atu4m.4.

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Nanophotonic resonator integration and miniaturization decrease detection noise of nanomechanical scanning probe microscopy and increase its throughput. Using pulsed laser excitation, we demonstrate fast imaging (≈500,000× faster than a commercial probe) of thermal properties with 35nm spatial resolution.
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Babaei, Hasan, Pawel Keblinski, and J. M. Khodadadi. "Molecular Dynamics Study of the Interfacial Thermal Conductance at the Graphene/Paraffin Interface in Solid and Liquid Phases." In ASME 2013 Heat Transfer Summer Conference collocated with the ASME 2013 7th International Conference on Energy Sustainability and the ASME 2013 11th International Conference on Fuel Cell Science, Engineering and Technology. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ht2013-17478.

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By utilizing molecular dynamics (MD) simulations, we study the interfacial thermal conductance at the interface of graphene and paraffin. In doing so, we conduct non-equilibrium heat source and sink simulations on systems of parallel and perpendicular configurations in which the heat flow is parallel and perpendicular to the surface of graphene, respectively. For the perpendicular configuration, graphene with different number of layers are considered. The results show that the interfacial thermal conductance decreases with the number of layers and converges to a value which is equal to the obtained conductance by using the parallel configuration. We also study the conductance for the solid phase paraffin. The results indicate that solid paraffin-graphene interfaces have higher conductance values with respect to the corresponding liquid phase systems.
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Jayadeep, U. B., R. Krishna Sabareesh, R. Nirmal, K. V. Rijin, and C. B. Sobhan. "Molecular Dynamics Modeling of the Effect of Thermal Interface Material on Thermal Contact Conductance." In ASME 2008 First International Conference on Micro/Nanoscale Heat Transfer. ASMEDC, 2008. http://dx.doi.org/10.1115/mnht2008-52204.

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Thermal contact conductance is used to indicate the resistance offered by a contact interface to the flow of heat. When an interface material is applied as nano-layered coatings on super-finished contacting surfaces, the possibility of size effects necessitates the use of a discrete computation method for its analysis. Hence, a methodology is proposed which utilizes Molecular Dynamics (MD) simulations to obtain the size affected thermal conductivity of the interfacial layer, which in turn characterizes the thermal contact conductance behavior. Molecular Dynamics codes have been developed, making use of Sutton-Chen many-body potential, suitable for metallic materials. The model includes the asperities at the contact interface, assuming the asperities to be of a simplified geometry. The paper also presents the validation of the codes developed, and parametric studies on the effect of temperature, number of asperities and the material used for thermal interface coating on the size-affected interfacial conductivity.
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Hopkins, Patrick E., Richard N. Salaway, Robert J. Stevens, and Pamela M. Norris. "Dependence of Thermal Boundary Conductance on Interfacial Mixing at the Chromium-Silicon Interface." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-15288.

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The thermal conductance at solid-solid interfaces is becoming increasingly important in thermal considerations dealing with devices on nanometer length scales. Specifically, interdiffusion or mixing around the interface, which is generally ignored, must be taken into account when the characteristic lengths of the devices are on the order of the thickness of this mixing region. To study the effect of this interfacial mixing on thermal conductance, a series of Cr films are grown on Si substrates subject to various deposition conditions to control the growth around the Cr/Si boundary. The Cr/Si interfaces are characterized with auger electron spectroscopy depth profiling. The thermal boundary conductance (hBD) is measured with the transient thermoreflectance technique. Values of hBD are found to vary with both the thickness of the mixing region and the rate of compositional change in the mixing region. The effects of the varying mixing regions in each sample on hBD are discussed and the results are compared to the diffuse mismatch model.
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Reports on the topic "Interfacial thermal conductance"

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Norris, Pamela M. Modeling Interfacial Thermal Boundary Conductance of Engineered Interfaces. Fort Belvoir, VA: Defense Technical Information Center, August 2014. http://dx.doi.org/10.21236/ada609810.

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