Journal articles: 'Interfacial reaction'

1

Astumian, R. D., and P. B. Chock. "Interfacial reaction dynamics." Journal of Physical Chemistry 89, no. 16 (August 1985): 3477–82. http://dx.doi.org/10.1021/j100262a012.

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2

O'Shaughnessy, B., and D. Vavylonis. "Interfacial reaction kinetics." European Physical Journal E 1, no. 2-3 (February 2000): 159–77. http://dx.doi.org/10.1007/pl00014596.

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3

Shubber, Fatima L. "Study the Interfacial Reaction between Copper/304 Stainless Steel Joining." Journal of Advanced Research in Dynamical and Control Systems 12, SP4 (March 31, 2020): 365–70. http://dx.doi.org/10.5373/jardcs/v12sp4/20201500.

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4

Wertheim, G. K., and D. N. E. Buchanan. "Interfacial reaction ofC60with silver." Physical Review B 50, no. 15 (October 15, 1994): 11070–73. http://dx.doi.org/10.1103/physrevb.50.11070.

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5

Wang, Chao-Hong, Chen-Nan Chiu, and Sinn-Wen Chen. "Investigations on interfacial reactions at reentrant corners." Journal of Materials Research 25, no. 5 (May 2010): 999–1003. http://dx.doi.org/10.1557/jmr.2010.0121.

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Interfacial reactions in Bi/Ni, Sn/Co, and Sn/Te systems that exhibit unique cruciform pattern formation are investigated. Different from the couples examined in the past, the solid substrates, Ni, Co, and Te, are placed outside the couples while constituents of low melting temperature, Bi and Sn, are placed in the center. With interfacial reactions proceeding in these couples, the reaction products grow inwardly at reentrant corners, and shrinking of the reaction layer at the corner is observed. As a result of the volumetric changes caused by interfacial reactions, stresses are built up in the couples, and stress-intensified locations are found at reentrant corners. The built-up stresses alter the diffusion rates and thus retard the reaction at the corners. Instead of forming cruciform patterns, the inner reactant is of flat shuriken shape after reactions.

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Lii, Ding-Fwu, Jow-Lay Huang, Jin-Jay Huang, and Horng-Hwa Lu. "The interfacial reaction in Cr3C2/Al2O3 composites." Journal of Materials Research 14, no. 3 (March 1999): 817–23. http://dx.doi.org/10.1557/jmr.1999.0108.

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This study investigates the effects of sintering atmosphere and temperature on the interfacial properties of Cr3C2/Al2O3 composites. Thermodynamic considerations and calculations with computer-assisted methods for the equilibrium compositions in the Al–O–Cr–C system were used to simulate the interfacial reaction in Cr3C2/Al2O3 composite during sintering. The results were in good agreement with the experimental analysis. Cr3C2 is more stable during sintering in a system with carbon due to the lower equilibrium oxygen partial pressure. Controlling CO and O2 gas concentration, Cr3C2 first oxidized, decarbonized, and then transformed to Cr7C3 before reacting with Al2O3. An interfacial reaction between Cr3C2 and Al2O3 was not observed.

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7

Chu, Jing, Ming Gu, Ruiheng Liu, Shengqiang Bai, Xun Shi, and Lidong Chen. "Interfacial behaviors of p-type CeyFexCo4–xSb12/Nb thermoelectric joints." Functional Materials Letters 13, no. 05 (May 28, 2020): 2051020. http://dx.doi.org/10.1142/s1793604720510200.

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Interfacial diffusions and/or chemical reactions are one of the key issues for the reliability of CoSb3-based skutterudite thermoelectric (TE) joint, especially for the [Formula: see text]-type joint, which limits the applications of TE devices. We investigate the interfacial evolution for [Formula: see text]-type CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints ([Formula: see text]–1, [Formula: see text], 3, 4) and combine the previous study on [Formula: see text]-type Yb[Formula: see text]Co4Sb[Formula: see text]/Nb joint to demonstrate the effect of TE materials on the interfacial microstructure and interfacial resistivity. The reaction–diffusion kinetic analysis shows that the TE materials has little effect on chemical reactions but strongly influence the Sb diffusions. The low energy barrier of Sb diffusion leads to the absent phase decomposition of skutterudites in CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints. The interfacial resistivity of CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints is related with Fe content and the interfacial reaction layer (IRL) growth. In addition, since the interfacial reaction layer growth rate and interfacial resistivity of CeyFexCo[Formula: see text]Sb[Formula: see text]/Nb joints are both low, Nb is an adequate barrier layer candidate material.

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8

Chou, T. C., A. Joshi, and J. Wadsworth. "Solid state reactions of SiC with Co, Ni, and Pt." Journal of Materials Research 6, no. 4 (April 1991): 796–809. http://dx.doi.org/10.1557/jmr.1991.0796.

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Solid state reactions between SiC ceramics and Co, Ni, and Pt metals have been studied at temperatures between 800 and 1200 °C for various times under He or vacuum conditions. Reactions between the metals and SiC were extensive above 900 °C. Various metal silicides and carbon precipitates were formed in layered reaction zones. Interfacial melting was also observed at certain temperatures; teardrop-shaped reaction zones, porosity, and dendritic microstructure resulting from melting/solidification were evident. The metal/ceramic interfaces exhibited either planar or nonplanar morphologies, depending upon the nature of the metal/ceramic reactions. Concave interfacial contours were observed when interfacial melting occurred. By contrast, planar interfaces were observed in the absence of interfacial melting. In all cases, the decomposition of SiC was sluggish and may serve as a rate limiting step for metal/ceramic reactions. Free unreacted carbon precipitates were formed in all the reaction zones and the precipitation behavior was dependent upon the metal system as well as the location with respect to the SiC reaction interface. Modulated carbon bands, randomly scattered carbon precipitates, and/or carbon-denuded bands were formed in many of the reaction zones, and the carbon existed in a mixed state containing both amorphous and graphitic forms.

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9

Zhang, Qiang, Jie Cai Han, Ye Zhu, and Gao Hui Wu. "Microstructure and Hardness Performance of a SiCp/Al Composite by Pressureless Infiltration Technique." Key Engineering Materials 353-358 (September 2007): 1318–21. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1318.

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In the present work, a SiCp/Al composite was fabricated by pressureless infiltration of aluminum alloy into loose-packed SiC particles preform, and its microstructure and hardness performance were investigated. The results showed that the composite was fully infiltrated and the particles were distributed uniformly in the composite. Interfacial reactions were found in the as-cast composite and the reaction product was identified as MgAl2O4 by TEM observation and XRD analysis. The interfacial reactions enhanced the wettability and promote the spontaneous infiltration process. The thermal exposure process increased the Brinell hardness of the composite. After the thermal exposure process, the block-like interfacial reaction products were distributed discretely, but the amount of the reaction products was increased.

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10

Chou, T. C. "Interfacial reaction of BN/Ni3Al." Applied Physics Letters 53, no. 16 (October 17, 1988): 1500–1502. http://dx.doi.org/10.1063/1.100467.

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11

Chern, Yaw-Terng, and Leo-Wang Chen. "Interfacial polyfunctional condensation: Curing reaction." Journal of Applied Polymer Science 42, no. 9 (May 5, 1991): 2535–41. http://dx.doi.org/10.1002/app.1991.070420919.

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12

Luo, Langli, Liang Li, Daniel K. Schreiber, Yang He, Donald R. Baer, Stephen M. Bruemmer, and Chongmin Wang. "Deciphering atomistic mechanisms of the gas-solid interfacial reaction during alloy oxidation." Science Advances 6, no. 17 (April 2020): eaay8491. http://dx.doi.org/10.1126/sciadv.aay8491.

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Gas-solid interfacial reaction is critical to many technological applications from heterogeneous catalysis to stress corrosion cracking. A prominent question that remains unclear is how gas and solid interact beyond chemisorption to form a stable interphase for bridging subsequent gas-solid reactions. Here, we report real-time atomic-scale observations of Ni-Al alloy oxidation reaction from initial surface adsorption to interfacial reaction into the bulk. We found distinct atomistic mechanisms for oxide growth in O2 and H2O vapor, featuring a “step-edge” mechanism with severe interfacial strain in O2, and a “subsurface” one in H2O. Ab initio density functional theory simulations rationalize the H2O dissociation to favor the formation of a disordered oxide, which promotes ion diffusion to the oxide-metal interface and leads to an eased interfacial strain, therefore enhancing inward oxidation. Our findings depict a complete pathway for the Ni-Al surface oxidation reaction and delineate the delicate coupling of chemomechanical effect on gas-solid interactions.

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13

Wang, Li Li, Jia Rong Li, Ding Zhong Tang, Guo Hong Gu, Xin Li, Jian Sheng Yao, Hong Na Fan, and Shu Xin Niu. "Effect of Directional Solidification Condition on Interfacial Reaction between DD6 Single Crystal Superalloy and Zirconia-Silica Ceramic Core." Advanced Materials Research 926-930 (May 2014): 72–76. http://dx.doi.org/10.4028/www.scientific.net/amr.926-930.72.

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The characterization of the interfaces between DD6 single crystal superalloy and zirconia-silica (ZrO2-SiO2) ceramic cores was performed by optical microscope (OM), SEM and EDS analysis in order to study the influence of directional solidification condition on the interfacial reaction. The results showed that there were chemical reactions on interfaces between DD6 melt and ZrO2-SiO2ceramic cores and the main reaction product was Al2O3. The interfacial reaction involved a complex, interdependent system including the oxidation of Al element, the destabilization of calcia stabilization zirconia (CSZ) and the formation of liquid phase with low melting point. The intensity of interfacial reaction increased with the increase of pouring temperature and solidification time, but the number and size of reaction zones could not increase together because of the limited Al content in DD6 alloy.

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14

Christian, Ujvala P., and Shrikant J. Wagh. "Experimental Studies on n-Octane and Cyclohexane as Organic Solvent for Synthesis of Polyurea Microcapsules by Interfacial Polycondensation." Asian Journal of Engineering and Applied Technology 7, no. 2 (November 5, 2018): 64–66. http://dx.doi.org/10.51983/ajeat-2018.7.2.1006.

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Interfacial polycondensation (IP) is one of the most important step polymerization technique used for synthesis of polyurea microcapsules. IP reaction between diamine and diisocyanate monomers which are soluble in aqueous phase and organic phase respectively is very fast therefore the overall process of polyurea synthesis via interfacial polycondensation, by and large, mass transfer controlled reaction. Selection of proper organic solvent is one of the important parameter for IP reactions. The objective of this experimental work was to study the effect of n-Octane and Cyclohexane as an organic solvent on kinetics of polyurea microcapsules synthesized by interfacial polycondensation reaction. In this reaction system IP reaction occurs on organic side of the interface so reaction rate increased with increase in relative polarity of organic solvent. Characterization of polyurea was carried out by XRD and DSC which demonstrated that semi crystalline polyurea microcapsules with good thermal stability were synthesized.

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15

Lee, Byeong-Joo. "Thermodynamic analysis of solid-state metal/Si interfacial reactions." Journal of Materials Research 14, no. 3 (March 1999): 1002–17. http://dx.doi.org/10.1557/jmr.1999.0134.

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An attempt has been made to interpret the experimentally reported transitions of layer sequences during the Co/Si, Ti/Si, and Ni/Si interfacial reactions in a consistent way, and to build a thermodynamic calculation scheme that enables it. The basic ideas are that the silicide with the highest driving force of formation under a metastable local equilibrium state at an interface would form first at the lowest temperature, and that when several silicides can nucleate simultaneously and compete for growth at an initial stage of a high temperature reaction, the one whose composition is closest to those of surrounding phases would form a continuous interfacial layer first and grow thicker. A critical review of literature information has also been made in order to clarify the first-forming silicide and silicide formation sequence in each metalySi interfacial reaction. The observed first-forming crystalline silicides, CoSi, Ti5Si3, and Ni2Si, in each metalySi interfacial reaction were in agreement with the present prediction based on the first idea. The reason why Co2Si and C49 TiSi2 have frequently been observed in high temperature Co/Si and TiySi reactions as if they were the first-forming crystalline silicides could also be explained based on the second idea. By combining both ideas, a general thermodynamic calculation scheme that can be applied for analysis, rationalization, and even prediction of interfacial reactions between different materials could be suggested.

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16

Yao, Jian Sheng, Long Pei Dong, Li Li Wang, Shu Yang, Wei Yang, Zeng Li Wang, and Bin Shen. "Interface Reaction between DD6 Single Crystal Superalloy and Ceramic Core." Materials Science Forum 1035 (June 22, 2021): 297–304. http://dx.doi.org/10.4028/www.scientific.net/msf.1035.297.

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The interfacial reaction between alloys and ceramic materials is an important factor to influence the quality and service performance of the turbine blade. In this paper, three typical height sections of 120mm, 160mm and 210mm were selected, and the interface reactions between DD6 single crystal superalloy and silica based ceramic cores were investigated by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS). The results showed that the infiltration degree of the melt alloy increases with the increase of reaction time. The thickness of the reaction layer could be over 0.3mm when the reaction time increased up to 70min. The main reasons of forming the infiltration layer were the infiltration of the Al element and the interfacial reaction between the Al element and the ceramic core. There formed an aluminum deficient layer on the metal surface because of the interface reaction between the alloy and the ceramic core. The dense layer formed by interfacial reaction on the surface of the core will cause some difficulties for core leaching. Keywords: DD6 single crystal superalloy; Silica based ceramic core; Interface reaction

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17

Onishi, M., K. Miyake, Y. Wakamatsu, and Toshitada Shimozaki. "Interfacial Reaction and Migration Due to Binary Reaction Diffusion." Defect and Diffusion Forum 95-98 (January 1993): 561–72. http://dx.doi.org/10.4028/www.scientific.net/ddf.95-98.561.

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18

Xie, Yao Zhong, De Jun Fei, and Ya Gu Dang. "Kinetic Study on the Transport of Chromium(III) by Emulsion Liquid Membrane." Advanced Materials Research 781-784 (September 2013): 2750–57. http://dx.doi.org/10.4028/www.scientific.net/amr.781-784.2750.

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The interfacial reactions and thermodynamic properties of the emulsion liquid membrane on separation and concentration of chromium (III) were discussed. Interfacial chemical reaction equations of membrane phase with P204 and mass transfer mechanism of ELM system were determined. The extraction reaction enthalpy is 11.41 kJmol1, while stripping reaction enthalpy is-143.65 kJmol1, were obtained by investigating reaction temperature on the distribution ratio under two different conditions. So extraction is an endothermic process and stripping is an exothermic process. And the main driving force of the separation system is the concentration gradient of hydrogen ion between external and internal phase interface.

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19

Zhang, Jin Ping, Yuan Dao Chen, Gu Zhen Zhou, and Ji Lin Lu. "Effects of Oxygen-Deficient Ambience Annealing on Polycrystalline Y₂O₃ Film." Advanced Materials Research 233-235 (May 2011): 2367–70. http://dx.doi.org/10.4028/www.scientific.net/amr.233-235.2367.

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Polycrystalline Y2O3 thin films have been prepared by radio frequency (RF) reactive sputtering. The topographies of Y2O3 films were shown by AFM. The XPS measurement has found the interfacial silicates and the amorphous silicon sub-oxide (SiOx) interfacial layer which is also indicated by the FTIR investigation. The interfacial reactions have been induced by an oxygen-deficient or oxygen-sufficient reaction environment at Y2O3/Si interface.

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20

Onishi, Masami, Yoshinori Wakamatsu, and Toshitada Shimozaki. "Binary Interdiffusion Phenomena and Interfacial Reaction." Materia Japan 33, no. 7 (1994): 940–47. http://dx.doi.org/10.2320/materia.33.940.

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21

GU QUAN, WANG YOU-XIAGN, CUI YU-DE, CHEN XIN, and TAO KUN. "INTERFACIAL REACTION OF Ti AND SAPPHIRE." Acta Physica Sinica 45, no. 5 (1996): 832. http://dx.doi.org/10.7498/aps.45.832.

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22

Yamada, Yoshio, and Shoji Yotsutani. "Note on chemical interfacial reaction models." Proceedings of the Japan Academy, Series A, Mathematical Sciences 62, no. 10 (1986): 379–81. http://dx.doi.org/10.3792/pjaa.62.379.

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23

Rana, Shammi, Pooja Sindhu, and Nirmalya Ballav. "Perspective on the Interfacial Reduction Reaction." Langmuir 35, no. 30 (July 8, 2019): 9647–59. http://dx.doi.org/10.1021/acs.langmuir.9b01250.

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24

Nieh, T. G., J. Wadsworth, and A. Joshi. "Interfacial reaction between carbon and beryllium." Scripta Metallurgica 20, no. 1 (January 1986): 87–92. http://dx.doi.org/10.1016/0036-9748(86)90218-8.

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25

Zhang, Yafen, Robert C. Chapleski, Jessica W. Lu, Thomas H. Rockhold, Diego Troya, and John R. Morris. "Gas-surface reactions of nitrate radicals with vinyl-terminated self-assembled monolayers." Phys. Chem. Chem. Phys. 16, no. 31 (2014): 16659–70. http://dx.doi.org/10.1039/c4cp01982b.

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Interfacial reactions between gas-phase nitrate radicals, a key nighttime atmospheric oxidant, and a model unsaturated organic surface have been investigated to determine the reaction kinetics and probable reaction mechanism.

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26

Uenishi, Keisuke, and Kojiro F. Kobayashi. "Interfacial Reaction between Sn-Ag Based Solders and Au/Ni Alloy Platings." Materials Science Forum 502 (December 2005): 411–16. http://dx.doi.org/10.4028/www.scientific.net/msf.502.411.

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The microstructure and strength for the micro joints of Pb free Sn-Ag based solders with Au/Ni alloy platings were investigated. For the joint using Sn-Ag solder, Ni3Sn4 reaction layer formed at the solder/pad interface and also P-rich layer formed in Ni-P plating. The P-rich layer was confirmed to be composed of Ni-P-Sn ternary compound layer and crystallized Ni3P layer. Both of them introduced defects, which degraded the joint strength. Addition of Cu to Sn-Ag solders suppressed the formation of such a P rich layer while the (Cu, Ni)6Sn5 reaction layer was formed at the solder/pad interface. These different interfacial reactions would affect the changes in the joint strength during heat exposure at 423K. On the contrary, addition of Co to Ni platings enhanced the interfacial reaction and the Sn-Ag solder completely transformed to the intermetallic compounds under higher melting temperature even by heating to 543K. The addition of Co in Ni could change the interfacial reaction layer from Ni3Sn4 to (Ni, Co)Sn2 with higher diffusivity of Ni which enhanced formation of intermetallic phases. The control of interfacial reaction by the alloying elements is important to obtain ideal micro joints.

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27

Dai, Jiahong, Bin Jiang, Hongmei Xie, and Qingshan Yang. "Interfacial Reactions between Mg-40Al and Mg-30Y Master Alloys." Metals 10, no. 6 (June 20, 2020): 825. http://dx.doi.org/10.3390/met10060825.

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Interfacial reactions between Mg-40Al and Mg-30Y master alloys were investigated at intervals of 25 °C in the 350–400 °C by using a diffusion couple method. Noticeable reaction layers were formed at the interfaces of the diffusion couples. The concentration profiles of the reaction layers were characterized. The diffusion path of the diffusion couple at 400 °C is constructed on the Mg-Al-Y ternary isothermal temperature phase diagram. The phases of the reaction layer were characterized by X-ray diffraction. The interfacial reaction thermodynamics of diffusion couples were studied. These results indicate that Al2Y is the only new formed intermetallic phase in the reaction layers. The growth constants of the reaction layers were calculated. In the reaction layer II, the integrated interdiffusion coefficients of Al are higher than Y, the diffusion activation energy of Y is higher than that of Al.

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28

Chen, Jian, Mingyuan Gu, and Fusheng Pan. "Reactive wetting of a metal/ceramic system." Journal of Materials Research 17, no. 4 (April 2002): 911–17. http://dx.doi.org/10.1557/jmr.2002.0133.

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The mechanism of reactive wetting of metal/ceramic was investigated on the basis of a detailed description of the thermodynamics of interfacial reactions. The interfacial reaction of the metal/ceramic system has been treated as the reaction between the surface phase of the metal matrix and that of the substrate. It is concluded that reactive wetting is governed not only by the term accounting for the intensity of interfacial chemical reactions but also by the term accounting for the physicochemical properties of the resulting interface. In some cases, only one of them contributes dominantly to wetting. The criteria for the choice of an alloying element to promote wetting should not only include its reactivity with the substrate but also its ability to favorably modify the metal/substrate interface.

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29

Chou, T. C., and A. Joshi. "Solid state interfacial reactions of Ti3Al with Si3N4 and SiC." Journal of Materials Research 7, no. 5 (May 1992): 1253–65. http://dx.doi.org/10.1557/jmr.1992.1253.

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Solid state interfacial reactions of Ti3Al with Si3N4 and SiC have been studied via both bulk and thin film diffusion couples at temperatures of 1000 and 1200 °C. The nature of reactions of Ti3Al with Si3N4 and SiC was found to be similar. Only limited reactions were detected in samples reacted at 1000 °C. In the Ti3Al/Si3N4, layered reaction products consisting of mainly titanium silicide(s), titanium-silicon-aluminide, and titanium-silicon-nitride were formed; in the Ti3Al/SiC, the reaction product was primarily titanium-silicon-carbide. In both cases, silicon was enriched near the surface region, and aluminum was depleted from the reacted region. Reactions at 1200 °C resulted in a drastic change of the Si distribution profiles; the enrichment of Si in near surface regions was no longer observed, and the depletion of Al became more extensive. Titanium nitride and titanium-silicon-carbide were the major reaction products in the Ti3Al/Si3N4 and Ti3Al/SiC reactions, respectively. Mechanisms of driving the variation of Si, N, and C diffusion behavior (as a function of temperature) and the depletion of Al from the diffusion zone are suggested. It is proposed that reactions of Ti3Al with Si3N4 and SiC lead to in situ formation of a diffusion barrier, which limits the diffusion kinetics and further reaction. The thermodynamic driving force for the Ti3Al/Si3N4 reactions is discussed on the basis of Gibbs free energy.

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30

Perepezko, J. H., S. D. Imhoff, and R. Sakidja. "Analysis and Control of Interface Reactions in Microelectronic Systems." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000264–74. http://dx.doi.org/10.4071/isom-2011-tp2-paper6.

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Multilayer, multicomponent architectures are ubiquitous in microelectronic systems over size scales ranging from microns to nanometers. During device fabrication and use reactions at component interfaces often occur and lead to both beneficial and deleterious product phases. The analysis of the reactions is an essential component in developing strategies for reaction control. An effective approach for the analysis of interface reactions is presented based upon the interpretation of the interface microstructure evolution in terms of the operative multicomponent diffusion pathway where the influence of initially steep concentration gradients is included in the examination of reaction phase sequencing. From the established diffusion pathway a novel kinetic biasing approach can be devised as a robust means to engineer thermodynamic and mechanical compatibility including the development of an in-situ diffusion barrier. The degree of kinetic control can be augmented further by means of tailoring the diffusion pathways to establish the preferred interfacial reaction sequences. Furthermore, the extent of the interfacial control can be utilized to limit the formation of undesired interfacial reactions. The analysis and control concepts are illustrated with an example from high temperature SiC applications.

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31

Oliveira, M., S. Agathopoulos, and J. M. F. Ferreira. "Reactions at the Interface Between Al2O3–SiO2 Ceramics with Additives of Alkaline-earth Oxides and Liquid Al–Si Alloy." Journal of Materials Research 17, no. 3 (March 2002): 641–47. http://dx.doi.org/10.1557/jmr.2002.0091.

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The interfacial reactions between aluminosilicate ceramics doped with MgO, CaO, or BaO and Al–7 wt% Si alloy were investigated at 1023, 1173, and 1323 K under vacuum for 4 h. Alkaline-earth oxide additives defined phase formation and microstructure of the sintered ceramics and subsequently controlled the ceramic/metal interfacial reactions, which were always intensive. In general, reaction zones consisted of Al2O3, infiltrated with Al. In the case of CaO- and BaO-doped ceramics, precipitates formed into the metal phase and concentrated the reduced Ca and Ba, respectively. A reaction mechanism is proposed, which anticipates an active role of SiO2.

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32

MAO, YANGWU, SHUJIE LI, and YANG PAN. "WETTING BEHAVIOR OF GRAPHITE BY Ti-78Cu AND Ti-50Cu ALLOYS." International Journal of Modern Physics B 24, no. 15n16 (June 30, 2010): 3029–34. http://dx.doi.org/10.1142/s0217979210066033.

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The wetting behavior of Ti -78 Cu and Ti -50 Cu alloys on graphite has been investigated by the sessile drop method in high vacuum. The contact angle of Ti - Cu alloys on graphite is influenced by the wetting temperature. The wetting of Ti -78 Cu and Ti -50 Cu alloys on graphite is chemical wetting. The microstructure and composition of the interfacial zone of the wetting samples were analyzed by SEM, EDX and XRD. Microstructure and phase analysis reveals that inter-diffusions and interfacial reactions take place in the wetting process. The reaction products include TiC and the intermetallic compounds composed of Ti and Cu . The inter-diffusions and interfacial reactions contribute to the interfacial bonding.

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33

Wiegel, Aaron A., Matthew J. Liu, William D. Hinsberg, Kevin R. Wilson, and Frances A. Houle. "Diffusive confinement of free radical intermediates in the OH radical oxidation of semisolid aerosols." Physical Chemistry Chemical Physics 19, no. 9 (2017): 6814–30. http://dx.doi.org/10.1039/c7cp00696a.

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34

Lu, P., T. B. Du, R. E. Loehman, K. G. Ewsuk, and W. G. Fahrenholtz. "Interfacial microstructure formed by reactive metal penetration of Al into mullite." Journal of Materials Research 14, no. 9 (September 1999): 3530–37. http://dx.doi.org/10.1557/jmr.1999.0478.

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Microstructures in the reaction interface between molten Al and dense mullite have been studied by transmission electron microscopy to provide insight into mechanisms for forming ceramic–metal composites by reactive metal penetration. The reactions, which have the overall stoichiometry 3Al6Si2O13 + (8 + x)Al → 13Al2O3 + xAl + 6Si, were carried out at temperatures of 900, 1100, and 1200 °C for 5 and 60 min and 1400 °C for 15 min. Observed phases generally were those given in the above reaction; their proportions and interfacial microstructures, however, were strongly dependent on the reaction temperature. Using previously measured reaction kinetics data, the observed temperature dependence of the interfacial microstructure has been modeled as three sequential steps, each of which is rate limiting in a different temperature range.

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35

Chen, Chih-Chi, Ya-Ting Chan, and Yue-Ting Chen. "Interfacial reactions between Sn-Cu solders and Ni-Co alloys at 250 °C." Journal of Materials Research 25, no. 7 (July 2010): 1321–28. http://dx.doi.org/10.1557/jmr.2010.0168.

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Sn-xCu/Ni-yCo (x = 0.2–1.0 wt%, y = 10, 20, 40 at.%) interfacial reactions at 250 °C are examined in this study. Sn-Cu alloys are promising lead free solders, and Ni-Co alloys are the potential diffusion barrier layer materials in flip chip packaging. The Co and Cu effects on the Sn-Cu/Ni-Co interfacial reactions are examined. When the Co addition is 10 at.%, the reaction phases are the Ni3Sn4 and Cu6Sn5 phase, and Sn-Cu/Ni-10at.%Co interfacial reactions are similar to those of Sn-Cu/Ni. When the Co addition is 20 at.%, the CoSn2 phase is formed, and the reaction path is Sn-Cu/Ni3Sn4/CoSn2/Ni-20at.%Co. When the Co addition is 40 at.%, only Sn-Co binary phases are formed (CoSn2 and CoSn3), and Sn-Ni binary phases are not formed. The Cu6Sn5 phase is not formed until the Cu content is higher than 0.7 wt%. The Cu concentration effect is the main drawback of using Ni as the diffusion barrier layer material and the Sn-Cu solders. The Cu concentration effect of the Sn-Cu/Ni-Co interfacial reactions is not as pronounced as that of Sn-Cu/Ni.

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36

Qian, Luo. "Interface Reaction between Ti₃Al-based Alloy and Oxide Mold." Materials Science Forum 816 (April 2015): 562–66. http://dx.doi.org/10.4028/www.scientific.net/msf.816.562.

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Ti3Al based alloys are light and high-temperature materials, having potential wide applications in the aerospace and the aeronautical industries. Molten Ti is lively, and it is easy to react with the mold material during in the investment casting, and hence to form casting defects such as α contaminated layer in the metal near the surface and gas porosity, resulting in the deterioration of the surface quality and castings mechanical properties. Therefore, the mechanism of interfacial reaction between Ti3Al-based alloys and mold is necessary to study. In this paper, the interface reaction samples of Ti-24Al-15Nb-1Mo alloy and ZrO2(Y2O3stabilized) mold were prepared by actually investment casting. Optical microscopy, SEM, EMPA and micro-hardness tests were used to study the microstructures at metal side of interface, consider the element distribution and discuss the interfacial reaction mechanism. The results show that there is interface reaction between Ti-24Al-15Nb-1Mo alloy and ZrO2(Y2O3stabilized) mold, and it belongs to the typical bilateral diffusion reaction. The elements of Zr, Y, O diffuse into molten metal, at the same time, the matrix elements spread to the oxide mold, then form interfacial reaction layer. It has been found that the interfacial reaction was not uniform in the whole interface. In the thick-wall of castings, the interfacial reaction layer was thicker, and in thin-wall, the interfacial reaction layer was thinner.

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Zhang, Shuming, Minjuan Wang, Mao Wen, Jianhong Chen, Hu Li, Chuan Xie, Wangtengfei Fan, Qingfeng Wang, and Hao Huang. "Interfacial Reactions and Mechanical Properties Studies of C-Coated and C/B4C Duplex-Coated SiC Fiber-Reinforced Ti2AlNb Composites." Materials 12, no. 19 (October 6, 2019): 3257. http://dx.doi.org/10.3390/ma12193257.

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Continuous SiC fiber-reinforced Ti2AlNb matrix composites have a great potential for high-temperature aviation structure applications, and their properties strongly depend on the microstructure of the interfacial reaction layer. Notably, introducing diffusion barrier coatings has still been a popular strategy for optimizing the interfacial structure and interfacial properties of SiCf/Ti. In this work, C coating and C/B4C duplex coating were successfully fabricated onto SiC fibers via chemical vapor deposition (CVD), then consolidated into the SiCf/C/Ti2AlNb and the SiCf/C/B4C/Ti2AlNb composites, respectively, via hot isostatic pressing (HIP) under the condition of 970 °C, 150 MPa, 120 min, and finally furnace cooled to room temperature. The C- and C/B4C-dominated interfacial reactions in the SiCf/C/Ti2AlNb and the SiCf/C/B4C/Ti2AlNb were explored, revealing two different reaction products sequences: The different-sized TiC and the coarse-grained (Ti,Nb)C + AlNb3 for the SiCf/C/Ti2AlNb; and the fine-grained TiB2 + TiC, the needle-shaped (Ti,Nb)B2/NbB + (Ti,Nb)C, the coarse-grained (Ti,Nb)C + AlNb2 for the SiCf/C/B4C/Ti2AlNb. Annealing experiments were further carried out to verify the different reaction kinetics caused by C coating and C/B4C duplex coating. The reaction layer (RL)-dominated interfacial strength and tensile strength estimations showed that higher interface strength and tensile strength occurred in the SiCf/C/Ti2AlNb instead of the SiCf/C/B4C/Ti2AlNb, when the same failure mode of fiber push-out took place.

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TAKEUCHI, Ikuo, Makoto KOBASHI, and Takao CHOH. "Interfacial reaction and interfacial shear strength between CVD-SiC fiber and aluminum." Journal of Japan Institute of Light Metals 42, no. 9 (1992): 492–97. http://dx.doi.org/10.2464/jilm.42.492.

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39

Chi, C., Y. T. Hu, and A. Lips. "Kinetics of Interfacial Reaction between Two Polymers Studied by Interfacial Tension Measurements." Macromolecules 40, no. 18 (September 2007): 6665–68. http://dx.doi.org/10.1021/ma070015i.

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Kosky, P. G., and E. P. Boden. "The interfacial polycarbonate reaction: Modeling the kinetics of carbamate side reactions." Journal of Polymer Science Part A: Polymer Chemistry 28, no. 6 (May 1990): 1507–18. http://dx.doi.org/10.1002/pola.1990.080280617.

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Wu, Kang, Junyang Wang, Qi Li, Yuqiang Yang, Xin Deng, Rongbin Dang, Meimei Wu, Zhijian Wu, Xiaoling Xiao, and Xiqian Yu. "In situ synthesis of a nickel concentration gradient structure of Ni-rich LiNi0.8Co0.15Al0.05O2 with promising superior electrochemical properties at high cut-off voltage." Nanoscale 12, no. 20 (2020): 11182–91. http://dx.doi.org/10.1039/d0nr01557a.

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42

Schulz, Kevin J., Xiang-Yun Zheng, and Y. Austin Chang. "Interfacial reactions in the Nb/GaAs system." Journal of Materials Research 4, no. 6 (December 1989): 1462–72. http://dx.doi.org/10.1557/jmr.1989.1462.

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Solid-state reactions between niobium and gallium arsenide in both thin film and bulk forms were studied in the temperature range 400 to 1000 °C using transmission electron microscopy (TEM), metallography, scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Initially Nb4As3 and Nb5Ga3 formed at the interface and grew very slowly. Following an incubation period, NbAs and NbGa, nucleated and grew at rates several orders of magnitude faster than the initial phases. The resulting metastable diffusion path, Nb/NbGa3/NbAs/GaAs, was observed even after relatively long-term annealing and is believed to be kinetically stabilized. Formation of the other Nb–Ga binary compounds as predicted by the phase diagram was inhibited by nucleation and kinetic barriers. The observed reaction sequence is discussed considering the thermodynamics, kinetics, and possible growth mechanisms involved in the reaction.

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Zhao, Kuai Le, Yan Fu Yan, Yang Yang Sheng, Ning Du, and Zhan Lei Liu. "Interfacial Reaction and Solderability of Zn20SnxCu Solder." Advanced Materials Research 337 (September 2011): 402–5. http://dx.doi.org/10.4028/www.scientific.net/amr.337.402.

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Zn20Sn solder with the melting point of 383.9°C and a low cost is considered as an ideal high-temperature lead-free solder. In the paper a new solder alloys were made by adding trace Cu into Zn20Sn alloy through alloying principle. Interfacial reaction and solderability of Zn20SnxCu (x=0 wt.%, 2 wt.%, 4 wt.% and 6 wt.%) solder on the copper substrate were investigated. Results showed that β’-CuZn, γ-Cu5Zn8 and ε-CuZn5 IMC layers were formed at the interface of Zn20SnxCu/Cu. The spreading areas of the Zn20SnxCu solders were reduced linearly with the increasing of the content of copper. The spreading aera of Zn20Sn solder was 52.88 mm2 while that of Zn20Sn6Cu was 50.82mm2 which was approximately 3.9% smaller than that of matrix solder. It is mainly related to the formation of ε-CuZn5 phase and the metal intermetallic compound between the solder and the substrate.

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Chen, Gang, Haruo Kishimoto, Katsuhiko Yamaji, Koji Kuramoto, and Teruhisa Horita. "Interfacial reaction phenomenon between La0.25Sr0.75TiO3 and ScSZ." Journal of Power Sources 246 (January 2014): 49–54. http://dx.doi.org/10.1016/j.jpowsour.2013.07.066.

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Zhang, Xian-man, Hong-feng Luo, and Liu-yong Shi. "Periodic Layered Structure Formed During Interfacial Reaction." Journal of Iron and Steel Research International 23, no. 11 (November 2016): 1127–33. http://dx.doi.org/10.1016/s1006-706x(16)30167-4.

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von Gottberg, Friedrich K., T. Alan Hatton, and Kenneth A. Smith. "Surface Instabilities Due to Interfacial Chemical Reaction." Industrial & Engineering Chemistry Research 34, no. 10 (October 1995): 3368–79. http://dx.doi.org/10.1021/ie00037a024.

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Yao, Xi, Hao Bai, Jie Ju, Ding Zhou, Jing Li, Hao Zhang, Bai Yang, and Lei Jiang. "Running droplet of interfacial chemical reaction flow." Soft Matter 8, no. 22 (2012): 5988. http://dx.doi.org/10.1039/c2sm25153a.

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Barcz, Adam J. "Kinetic model of Au‐GaAs interfacial reaction." Journal of Applied Physics 74, no. 5 (September 1993): 3172–76. http://dx.doi.org/10.1063/1.354586.

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NOGUCHI, Masato, Masashi MIYANO, Satoru KUHARA, Takashi MATSUMOTO, and Masana NOMA. "Interfacial kinetic reaction of human 5-lipoxygenase." European Journal of Biochemistry 222, no. 2 (June 1994): 285–92. http://dx.doi.org/10.1111/j.1432-1033.1994.tb18867.x.

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Tsai, Hong-Bing, Jaw-Tarng Jeng, and Ruey-Shi Tsai. "Reaction kinetics of interfacial polycondensation of polyarylate." Journal of Applied Polymer Science 39, no. 2 (January 20, 1990): 471–76. http://dx.doi.org/10.1002/app.1990.070390221.

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Journal articles on the topic 'Interfacial reaction'

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