Dissertations / Theses on the topic 'Interfacial reaction'
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Matthews, Sinéad Marie. "A microfluidic investigation of interfacial reaction kinetics." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.613334.
Full textUnwin, Patrick Robert. "Hydrodynamic electrodes and the study of interfacial reaction mechanisms." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.236340.
Full textLing, Juliette Roseanne. "Enhancement of the interfacial transfer of iodine by chemical reaction." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp01/MQ29382.pdf.
Full textXu, Lei. "Controlling interfacial reaction in aluminium to steel dissimilar metal welding." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/controlling-interfacial-reaction-in-aluminium-to-steel-dissimilar-metal-welding(721d3009-de49-434c-bd81-b01ff5973706).html.
Full textRhamdhani, Muhammad Akbar Brooks Geoffrey. "Reaction kinetics and dynamic interfacial phenomena in liquid metal-slag systems." *McMaster only, 2005.
Find full textYu, Kyle Kai-Hung. "Interfacial Electrochemistry of Copper and Spectro-Electrochemical Characterization of Oxygen Reduction Reaction." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc103416/.
Full textBaig, Fakhir U. "Effects of interfacial reaction on oil displacement in a Hele-Shaw cell." Thesis, University of Ottawa (Canada), 1993. http://hdl.handle.net/10393/7666.
Full textKohler, Sven Philipp. "Dynamics of the gas-liquid interfacial reaction of O(³P) atoms with squalane." Thesis, Heriot-Watt University, 2006. http://hdl.handle.net/10399/153.
Full textWang, Yin. "A metallurgical approach for controlling interfacial reaction in aluminium to magnesium dissimilar metal welding." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/a-metallurgical-approach-for-controlling-interfacial-reaction-in-aluminium-to-magnesium-dissimilar-metal-welding(baf9186c-449e-44f3-9a1e-20dfde48b966).html.
Full textDe, Oliveira Cruz Mendes Tatsis Maria Alcina. "Marangoni instabilities under microgravity and in liquid-liquid systems with an interfacial chemical reaction." Thesis, Imperial College London, 1990. http://hdl.handle.net/10044/1/46279.
Full textDavis, Gwen Marie. "Interfacial Reaction of an Olefin-Terminated Self-Assembled Monolayer Exposed to Nitrogen Dioxide: An Investigation Into the Reaction Rate and Mechanism." Thesis, Virginia Tech, 2003. http://hdl.handle.net/10919/34927.
Full textMaster of Science
Lyu, Ying, Mark L. Brusseau, Ouni Asma El, Juliana B. Araujo, and Xiaosi Su. "The Gas-Absorption/Chemical-Reaction Method for Measuring Air-Water Interfacial Area in Natural Porous Media." AMER GEOPHYSICAL UNION, 2017. http://hdl.handle.net/10150/626480.
Full textDulnee, Siriwan. "Sorption and Interfacial Reaction of SnII onto Magnetite (FeIIFeIII2O4), Goethite (α-FeIIIOOH), and Mackinawite (FeIIS)." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-175316.
Full textTsubouchi, Shigetaka. "Study on Interfacial Reaction between Graphite Negative Electrode and Electrolyte Solution in Lithium-Ion Battery." Kyoto University, 2018. http://hdl.handle.net/2433/232047.
Full textMcCarthy, Fiona Materials Science & Engineering Faculty of Science UNSW. "Interfacial phenomena and dissolution of carbon from chars into liquid iron during pulverised coal injection in a blast furnace." Awarded by:University of New South Wales. School of Materials Science and Engineering, 2005. http://handle.unsw.edu.au/1959.4/20797.
Full textZhu, Wenbo. "Soldering interconnects through self-propagating reaction process." Thesis, Loughborough University, 2016. https://dspace.lboro.ac.uk/2134/23259.
Full textPerrodin, Marion. "Modélisation et simulation numérique du couplage entre hydrodynamique et réactions chimiques dans du verre fondu peuplé en microbulles." Thesis, Toulouse, INPT, 2011. http://www.theses.fr/2011INPT0108/document.
Full textMany bubbles are generated during glass production. Due to the high viscosity of molten glass, their rising velocity is extremely low. The refining step consists in adding reactive agents to improve the glass quality. Bubble release is enhanced by chemical reaction (iron and sulfate oxidation-reduction) which will favor shrinkage or growth of bubbles through interfacial mass transfer. Better understanding of bubble cloud behavior in molten glass requires studying the interplay between convection, diffusion and chemical reactions. The direct numerical simulation of the flow and reactive mass transfer provided new insights on modeling interfacial bubble gas fluxes. The acceleration factor has been determined for simple reversible reactions in order to validate the simulation tool. Different Péclet and Damkhöler numbers have been tested to map all the different regimes (diffusion, convection and reaction). Together with those simulations, we have carried out series of experiments in molten glass : propagation of oxidation fronts. At different temperatures and for various glass compositions, we have determined physical properties of reactive species. A theoretical model of reactive transport for instantaneous reactions has been proposed to interpret experimental data. The core of this multi-scale analysis contributed to elaborating an Euler- Lagrange model to simulate bubble clouds in reactive media. This model has been applied to specific processes related to glass industry and can easily be extended to any reactive bubbly flows
Payyapilly, Jairaj Joseph. "Formation And Growth Mechanisms of a High Temperature Interfacial Layer Between Al and TiO2." Diss., Virginia Tech, 2008. http://hdl.handle.net/10919/29733.
Full textPh. D.
Chen, Yi-Ling, and 陳俋菱. "Interfacial Reaction of Ag/In." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/50691047714701086600.
Full textChang, Jer-Min, and 張哲銘. "Interfacial reaction between NiCu alloyand Sn3Ag solder." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/31941990208634325126.
Full text國立中央大學
化學工程與材料工程研究所
93
ABSTRACT Diffusion barrier plays an important role in soldering, it can prevent fast reaction between tin and copper. Beside nickel and platinum, nickel-copper alloy is a possible diffusion barrier in the future. In the past, our labortoary investigated liquid/solid reaction between SnAgCu solder and nickel, it found that little copper added in solder can reduce consumption of nickel. Additionally, intermetallic compound at interface can also changed with copper added in solder. In the experiment, we electroplated nickel-copper alloy on copper and investigated reaction between Sn3Ag solder and different concentration nickel-copper alloy. Beside liquid/solid reaction, we also investigated solid/solid reaction. According to the result, change of concentration in nickel-copper alloy will affect intermetallic compound phase and consumption. Beside copper and nickel,we also electroplated Ni-15 at.%Cu,Ni-40 at.%Cu and Ni-54 at.%Cu. After 120 sec liquid/solid reaction, intermetallic compound between tin and Ni-15 at.%Cu is (Ni1-xCux)3Sn4;intermetallic compound between tin and Ni-40 at.%Cu is (Ni1-xCux)3Sn4;intermetallic compound between tin and Ni-54 at.%Cu is (Ni1-xCux)3Sn4 and (Cu1-xNix)6Sn5.After solid/solid reaction, intermetallic compound between tin and Ni-15 at.%Cu is (Ni1-xCux)3Sn4;intermetallic compound between tin and Ni-40 at.%Cu is (Ni1-xCux)3Sn4 and (Cu1-xNix)6Sn5;main intermetallic compound between tin and Ni-54 at.%Cu is (Cu1-xNix)6Sn5. After 120 sec liquid/solid reaction, consumption of nickel-copper alloy will increase with copper concentration in alloy.Surprisingly, consumption of Ni-54 at.%Cu is faster than copper after 300 sec liquid-state reaction. After solid/solid reaction, consumption of Ni-40 at.%Cu and Ni-54 at.%Cu is even faster than copper. In the research, we found that a little sulfur copper added in electrolyte will great affect copper concentration in nickel-copper alloy, intermetallic compound phase and consumption.
Yang, Ching-feng, and 楊青峰. "Surface Finish and Interfacial Reaction in Flexible Electronics." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/93582417365170636672.
Full text國立清華大學
化學工程學系
98
Flexible electronics have recently attracted very intensive studies because they are thinner, lighter, and more flexible. Similar to other electronic products, flexible electronics products comprise numerous devices and modules. The interconnection technologies of these devices and modules to the flexible substrates are crucial for manufacturing. Two metallic interconnection technologies, Au-Sn bonding and soldering, are frequently used in flexible electronic packaging. Thus, interfacial reactions in the two interconnections with different surface finishes are investigated in this study. Au bumps are formed on the chip side, and the Cu tracks on flexible substrates protected by the Sn surface finish are attached to the Au bumps. Consequently, a three-layer Au/Sn/Cu structure is frequently encountered in flexible electronic products. The reaction progression of the Au/Sn/Cu interfacial reactions was determined. Initially, the reaction path in the Au/Sn/Cu specimen is Au/AuSn/ AuSn2/AuSn4/Sn/Cu6Sn5/Cu3Sn/Cu. At longer reaction time, the (Cu,Au)6Sn5 phase was formed on the Au/Sn side interface as well. The Sn phase is completely consumed with even longer reaction time, the (Cu,Au)6Sn5 phases on the two sides would merge together and the reaction path then becomes Au/AuSn/AuSn2/AuSn4/(Cu,Au)6Sn5/Cu3Sn/Cu. The AuSn4 and AuSn2 phases disappeared step by step. The reaction path is then Au/Au5Sn/AuSn/(Cu,Au)6Sn5/Cu3Sn/Cu. The reaction path would continuously evolve until the specimen reaches thermodynamic equilibrium, and the final phases can be predicted from the phase diagrams. Low melting-point Pb-free solders, Sn-Zn and Sn-In based alloys, are selected to investigate in this study. Interfacial reactions between the Sn-8wt.%Zn-3wt.%Bi alloy and the Cu, Ag, and Ni substrates are examined. Two different kinds of substrates, bulk plate and electroplating layer, are used, and the reactions are carried out at 250 and 220oC. Although the Zn content is only 8wt.%, gamma-Cu5Zn8 and epsilon-CuZn5 phases are formed in the Sn-Zn-Bi/Cu couples. In the Sn-Zn-Bi/Ag couples, three Zn-Ag compounds are observed. The gamma-Ni5Zn21 phase is formed in the Sn-Zn-Bi/Ni couples. Similar results are found in the couples prepared with an electroplating layer: the reaction phases are the same, but the growth rates are different. Phase equilibria of Sn-Bi-Zn ternary system are determined in this study as well. Addition of Zn in Sn-20wt.%In alloys is effective on reducing undercooling and dissolution rate of Ag and Ni substrates in molten solders. For Sn-In-(Zn)/Ag and Sn-In-(Zn)/Ni interfacial reactions, the Zn dominating reaction products are formed when the Zn concentration is higher. A new kind of Sn-In based Pb-free solders with Zn addition is proposed in this study.
Chi, Shang-Wei, and 紀尚緯. "Interfacial Reaction in Electroplated Cu/Ni/Sn System." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/87495446472521833248.
Full text國立中興大學
化學工程學系所
105
In this study, the electroplating copper substrate and tin, electroplating copper substrate electroplating nickel and tin two kinds of reaction comparison, and in the copper electroplating solution by adding the additive SPS for further comparison. The experimental results show that Cu / Sn mainly produces IMC as Cu6Sn5 in the reflow soldering reaction, and Ni(Ni, Cu)3Sn4 is formed after electroplating the Ni layer. No holes are present in the interface. The presence of SPS does not affect the results. In the heat treatment at 150°C, Cu / Sn forms Cu3Sn in addition to Cu6Sn5, and many pores are formed in the interface of IMC. The reaction is accelerated at 200 ° C and becomes a layered structure with more pores. Using additive SPS are produced no holes at 150 ° C or 200 ° C after the copper plating solution. Copper substrate after electroplating nickel layer in two kinds of heat treatment are no holes and layered structure, the use of additives SPS in copper plating solution does not affect the results. If extend the heat treatment time, nickel layer reaction will not appear holes immediately in the interface. The experimental results show that electroplating copper substrate electroplating nickel can effectively prevent the hole in IMC interface and can be used with the additive SPS without affecting the results, and elongation the electroplating nickel reaction time, will not be observed holes are produced in the interface.
Huang, Kuan-Yu, and 黃冠育. "Interfacial Reaction of Different Solders in Solar Cell Interconnect." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/19790384386205962684.
Full textWang, Yu-Ju, and 王郁茹. "The Interfacial Reaction between Silver Electrode and Glass Ceramics." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/09893492969128357985.
Full text國立臺灣大學
材料科學與工程學研究所
93
In this research, the reaction layers produced from silver electrode cofired with La-Si-B-O-mullite (LSBM) or Mg-Si-B-Al (MSBA) glass ceramic composites in different sintering conditions were analyzed, and the controlled mechanism was investigated. The grown phases were characterized by X-ray diffractometry (XRD), and the microstructures were studied by scanning and transmission electronic microscopy (SEM and TEM). In order to study the phenomenon of Ag diffusion into the LSB glass in air, the D-LSBM/Ag laminated samples was sintered at 760oC-840oC and characterized. The activation energy was 246 kJ/mole and the Ag nano-crystals in the sizes between 10~200nm were found appearing in the reaction zone after sintering. Ag, at first, was oxidized in the sintering process, and diffused into the glass. Then Ag nano-particles grow by over-saturation in the glass when cooling. The glass transition temperature (Tg), onset crystallization temperature (To), and the crystallization peak temperature (Tp) decreased because of the Ag diffusion into the glass. The diffusion also degraded the densification, but increased the amount of crystalline phase in the reaction zone. Ag+-ion diffusion in Si-B-O glass was the main controlled mechanism of the formation of reaction zone. However, if the LSBM/Ag sintered in Ar atmosphere, the Ag signal could not be detected on the glass ceramic layer nearby LSBM/Ag interface, and no obvious reaction zone was produced. On the other hand, when the Ag cofired with MSBA glass ceramic composite, the microstructure of the interface revealed that Ag had diffused into the glass. The reaction of the interface consisted of three zones. Each zone appeared a glass matrix consisting of Ag. But, there was no Ag signal in the crystal phase. The path of the Ag diffusion was gradually blocked by the production of Mg-Al-Si crystalline phase in the zone 1. Because of the Mg content diffused toward electrode, and the slight increase of Al content in zone 2, the Ag concentration in zone 1 and 2 was lower than that in zone 3. The final distribution of Ag concentration didn’t reflect a general diffusion phenomenon.
Ye, Shan, and 葉珊. "Interfacial Reaction Between Solder Tin and Bismuth Telluride Substrate." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/49389177542530061773.
Full text國立中興大學
化學工程學系所
102
Because of no moving parts, small size and noiseless operation, thermoelectric (TE) materials have drawn much attention and be wildly used recently, among which, bismuth Telluride is best known for its great thermoelectric ability of converting heat to electricity at room temperature. Lots of researches are emphasizing on improving the conversion efficiency of TE materials, i.e. figure-of-merit, but only few are on the solder joints reliability of the thermoelectric device. Actually, “reliability” is the key point to prolong the lifetime of a thermoelectric device and so to improve the conversion efficiency due to huge amount of solder joints in the TE device. In this research, we use nano-structured and zone-melted Bi2Te3 substrates to join with SAC405 solder.We found zone-melted p-type Bi2Te3/SAC405 interface formed thicker SnTe than nano-structured p-type Bi2Te3/SAC405 at 120, 150 and 200℃. In n-type Bi2Te3/SAC405 interface, zone-melted samples formed thicker SnTe at 120 and 150℃. But after increasing aging temperature to 200℃, IMC in nano structured n-type Bi2Te3/SAC405 became thicker. It’s because of the BixTey formation between SnTe and n-type Bi2Te3 substrate. Knowing that bismuth telluride is a layered structure compound, we use pure Sn solder to join the zone-melted Bi2Te3 substrate in a direction perpendicular or parallel to its layer direction. The IMC is mainly composed by SnTe, but the IMC thickness and its morphology are quite different. SnTe in parallel joining direction had (220) preferential orientation. After long period of thermal treatment, Sn3Sb2 strips started to appear inside the SnTe layer and their distributions depended on substrate’s orientation. Compare to self-made Bi2Te3/Sn reaction couple, IMCs were not concernd with substrate’s orientation, and IMCs in self-made p-type Bi2Te3/Sn interface were much thinner than those in zone-melted reaction couples.
KE, SUN-JIAN, and 柯孫堅. "Investigation of interfacial reaction between metal silicides and GaAs." Thesis, 1989. http://ndltd.ncl.edu.tw/handle/16799636275077704271.
Full textLi, Cheng-Chieh, and 李澄傑. "Volume Shrinkage Induced by Interfacial Reaction In Micro Joints." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/82765863623943124198.
Full text國立臺灣大學
材料科學與工程學研究所
102
Imminent ending of Moore’s law is the most critical issue threatening the continuing development of semiconductor industry. The strategy of consensus in order to go beyond Moore’s law is through the Three-Dimensional Integrated Circuit (3D IC) architecture. Among many 3D IC integration schemes under development today, solder micro-bumping is a very promising one. Due to the extremely small size of solder joints in 3D IC packages, interfacial reaction features are quite different to that in the conventional solder joints. The space confinement behavior must be considered in the soldering reactions. In this proposal, data analysis and experimental implementation of the volume shrinkage induced by interfacial reaction in micro joints is investigated. Theoretically, there is a 5% shrinkage in volume to produce Cu6Sn5 from the reaction between Cu and Sn. The shrinkages for Cu3Sn and Ni3Sn4 are 7.5% and 11.3%, respectively. Consequently, micro joints would be in highly stressed states and prone to failure. Experimentally, stylus surface profilometer and SEM are carried out to measure the actual volume shrinkages and observe microstructure for Ni/Sn/Ni, Ni/Sn-Ag/Ni, and Cu/Sn/Cu sandwich structures during an isothermal aging at 180℃. The results show that the internal stress and the forming of voids in micro joints during solid state aging might induce potential reliability issues. It is the first time that the reaction induced volume shrinkage is experimentally measured in common solder system. Theoretical analysis and experimental evidence are presented in this proposal to illustrate these issues, and implications based on the findings will be also discussed.
Yang, Ji-Jyun, and 楊吉駿. "The Interfacial Reaction Investigation Between Sn-3.5Ag and Ni Substrate." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/45369287072958447229.
Full text義守大學
材料科學與工程學系碩士班
98
In order to understand the mechanism of intermetallic compounds (IMCs) formation and growth between Sn3.5Ag solder and Fe-Co-Ni substrate and their effects with reliability, this study would experience multiple reflows and high temperature storage, to observe the growth of IMCs and the mechanism of voids growth, and further explorer the relationship among them. After Sn-3.5Ag solder and Fe-Co-Ni substrate bonding reaction, the Ni3Sn4 IMCs formed at the interface, and the Ni3Sn4 IMCs with a little Co elements of Ni solubility;and the solder in Co、Ni element diffusion into and the formation of (Ni, Co)Sn4, and Ag3Sn particles above the location of a reunion. Experience of 1000 hours aging, the solder observed (Ni, Co)Sn4 and (Ni, Co)Sn2 two phase;while experiencing 7 reflows test its IMC composition is irregular, but close to being rich Sn phase. High temperature storge tests on IMCs layer thickness measurement, the growth rate of Sn3.5Ag/Fe-Co-Ni is much faster than Sn3.5Ag/Ni and Sn3.5Ag/Co. And using XRD analysis of detecting IMCs and decides the IMCs is Ni3Sn4 which the results correspond WDS analysis. And observe the formation of voids and to explorer the reason for its formation, that is attributed the Sn rapid consumed to form IMCs with Ni substrate, and its location is too late to be filled by other atoms and makes voids formation.
Li, Kuan-Yang, and 李冠洋. "A Study of the Interfacial reaction between Ni and Sn." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/18409103019290778774.
Full text國立中山大學
材料與光電科學學系研究所
100
The orientation relationship and interfaces of Ni3Sn4 and Ni3Sn2 with the Ni (001) and (111) surfaces have been studied with transmission electron microscopy. Ni was evaporated onto the NaCl (001) and (111) surfaces to form epitaxial Ni thin films and Sn was evaporated onto the Ni film and heat treated to form Ni3Sn4 and Ni3Sn2. No orientation relationship between Ni3Sn4 and Ni was found. Two types of orientation relationships between η-Ni3Sn2 and Ni were found: (1) (0002) η-Ni3Sn2//(220)Ni and (01 0) η-Ni3Sn2//(2 0)Ni on the (2 0) η-Ni3Sn2/(001)Ni interface;and (2) (0002) η-Ni3Sn2 //(2 0)Ni and (01 0) η-Ni3Sn2//(22 )Ni on the (2 0) η-Ni3Sn2/(001)Ni interface.
Fang, Yuang-shing, and 方爰心. "A Study of the Interfacial reaction between Pt and Sn." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/77067005506445670841.
Full text國立中山大學
材料與光電科學學系研究所
100
The orientation relationship and interfaces of PtSn4 and PtSn with the Pt (001) and (111) surfaces have been studied with transmission electron microscopy. Pt was evaporated onto the NaCl (001) and (111) surfaces to form epitaxial Pt thin films and Sn was evaporated onto the Pt films at different temperature to form PtSn4 and PtSn. Pt was evaporated onto the NaCl (001) and (111) surfaces at 350 ℃ to form epitaxial Pt thin films of [001] and [111] zone axes, respectively. Some grains are in random orientation and other as ring pattern. The grain size was at about 10-20 nm. Sn was evaporated onto the Pt surface at 150 ℃ to form PtSn4 and at 200 ℃ to form PtSn. No good orientation relationships were formed on both the PtSn4/ Sn and the PtSn/ Sn interfaces. Heterogeneous nucleation theory, predicts that PtSn should form before PtSn4, but PtSn4 was observed to the first to form. The possible reasons were discussed. Keywords: PtSn4/ Sn interface, PtSn/ Sn interface, orientation relationships, thin films, evaporator, transmission electron microscopy
Lo, Li-Chen, and 羅立晨. "Interfacial Reaction between Diffusion Barrier and Thermoelectric Materials under Current." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/56115317675735653569.
Full text國立中央大學
化學工程與材料工程研究所
100
This research investigated the interfacial reaction between the diffusion barrier, Ni, and the thermoelectric materials. Ni is a good barrier between Pb-free solder and n-type bismuth telluride (Bi2Te2.7Se0.3) thermoelectric material to prevent the rapid formation of brittle SnTe intermetallic compound (IMC). We use sandwich structure Sn/Ni-P/n-Bi2Te3/Ni-P/Sn to simulate the interfacial reaction under current. The depletion of diffusion barrier and the formation of intermetallic compound (IMC) will be concerned. Different current densities were applied to the system to investigate the electromigration behavior of the systems at various temperatures. The experiment condition was set at current density 100 A/cm2 and heating temperature 150 °C. The results showed that the Ni-P layer crystallized to Ni3P and left lots of Kirkendall void after current stressing. Instead of SnTe, NiTe and Bi4Te5 formed at the interfaces. These IMCs would affect the mechanical and electrical properties of the thermoelectric module. The aging sample at temperature 150 °C is prepared to determine the effect from electromigration. The results showed that the thickness of NiTe and Bi4Te5 at the cathode were thicker than at the anode. Due to the electromigration, Ni atoms diffused into thermoelectric material greatly. The Ni atoms diffused from cathode to anode driven by electrical current.
Chen, Chun-Wei, and 陳駿維. "Interfacial reaction between Sn(Cu) solder and NiCo alloy UBM." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/49636679478494714528.
Full text國立中央大學
化學工程與材料工程研究所
97
In the work, we study soldering reaction between Ni-Co alloy layer and Sn(Cu) Pb-free solders. Different Co concentrations in Ni-Co alloy layer were electroplated on Cu foils. Then, Sn(Cu) solders were reflowed on the Ni-Co alloy layers at 250 ℃ to investigate the growth situation and morphology of IMCs and to discuss the effect of Co concentration and Cu concentration on the reaction between Sn(Cu) and Ni-Co layer. Experimental results show that when the composition of NiCo alloy are Ni, Ni-20at%Co, Ni-63at%Co and Co, the corresponding IMCs formed at the interface are Ni3Sn4, (Ni,Co)Sn2, (Ni,Co)Sn3 and CoSn3. We also observe that the consumption of Ni-63at%Co alloy is more serious than other NiCo alloys and it is due to the loose structure of IMCs. In the case of Ni-20at%Co, after 300 seconds reflowing additional needle-like phase (Ni,Cu)3Sn4 was formed right above the continuous (Ni,Co)Sn2 layer when Cu concentration overs 0.2wt% and Cu addition enhance the growth rate of (Ni,Co)Sn2. In the case of Ni-63at%Co and Co, as Cu addition and increasing of Cu concentration are performed only CoSn3 formed at the interface, but these factors restrain the growth rate of CoSn3.
Yeh, Yu-ting, and 葉昱廷. "Current density effect on the interfacial reaction between Sn5Ag/Cu." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/51684119480342750917.
Full text國立中央大學
化學工程與材料工程研究所
96
Under 130℃ heat treatment, we concern about the interfacial reaction between Sn5Ag solder and investigate the Cu consumption behavior and the formation of intermetallic compound. We obtain that , the diffusion coefficient under 130℃ is about D=1.48×10-13 (cm2/s). Further, we investigate the interfacial reaction between Sn solder and Cu and also Sn5Ag solder and Cu under different current densities. And explain the Cu consumption behavior and the formation of intermetallic compound by flux. Cu consumption at cathode side is due to Cu atom transported to anode side immediately under current stressing. Under thermal treatment, Cu dissolution flux from Cu to IMC is faster than the diffusion flux in IMC layer. So, the latter one is rate determine step. From experiment results, the Cu consumption of Sn/Cu is much serious than Sn5Ag/Cu, this is because mixed Ag-Sn and Cu-Sn compound layer which formed at the interface can retard the Cu dissolution from IMC layer to solder matrix and also from Cu foil to IMC layer effectively. For Sn5Ag/Cu and Sn/Cu reaction under current stressing, we found that, both Cu consumption and IMC formation increase over time.
Chang, Chih-Chiang, and 張智強. "Dissolution and Interfacial Reaction between Cu and Sn-Ag-Cu Solders." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/28516702026379155360.
Full text國立中央大學
化學工程與材料工程研究所
95
In electronic packing, the dissolution of thin film under-bump metallizations (UBMs) and surface finishes in molten lead-free solders is one of the most important processing concerns. Due to a higher melting temperatures and richer Sn content, molten lead-free solder such as SnAgCu tend to dissolve the UBMs and surface finishes at faster rates than the eutectic SnPb. The SnAgCu solder are a series of lead-free solders with broad compositions. The OSP/Cu surface finish is the most common and important for solder pad and bumps in industry now. One of the important reasons for using Cu in packaging assemblies is that it provides good electrical conductivity. Therefore, the overall objective is to study in depth the reaction between the SnAgCu solders with various Cu concentrations, solder ball volume and the OSP/Cu. In this study, solder balls of different concentrations Sn3AgxCu (x=0/0.3/0.5/0.7wt.%) and different diameters, 500 μm or 760 μm were employed to study the influence of solder volume as well as the Cu concentration. The solder pad had the OSP/Cu surface finish. The pad opening diameter was 600 μm. The solder balls were placed on pad, and then reflowed for 90–450 sec at peak reflow temperature of 235℃. The microstructureal analyses of samples were obtained using a SEM, and the composition of reaction product was identified by JEOL JXA-87600SX electron microprobe (EPMA). It was found that the Cu concentration and solder ball volume in the SnAgCu ternary solder has very strong effect on the Cu consumption thickness and compound formation in solder joints with the OSP/Cu surface finish. The different Cu concentration in the SnAgCu ternary solder changed the Cu concentration gradient and dissolution driving force between molten-solder and Cu pad. The interfacial IMC layers thickness and grain size increased with increasing number of reflow times. From mass balance of Cu, whatever initial Cu concentration in the SnAgCu ternary solder ball the Cu concentration will reach dissolution equilibrium to maintain constant at various reflow times. The results of this study suggested that a high Cu-content SnAgCu solder should be used to prevent the chip failed due to molten solder dissolved nearly all the Cu from the Cu pad.
Huo, Cheng-Bang, and 霍正邦. "Investigation of Interfacial Reaction Between Various Optical glasses and Mold Materials." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/25299830787160714410.
Full text淡江大學
機械與機電工程學系碩士班
95
Glass molding process is considered to have great potential of mass producing various spherical/aspherical glass lenses to a higher achievable accuracy and at a lower cost. However, glass molding has its own problems to deal with such as glass stuck on the mold surfaces and chemical interaction between glass and mold materials. During the molding process mold surfaces have to experience cyclic mechanical and thermal loading. This research aimed to investigate the interaction between various optical glass and mold materials at elevated temperature with/without protective coating and protective gas. The results showed that molding in nitrogen gas could always improve the sticking problem. It is also worth noting that the diffusion between mold and glass proceeds more easily when there are more network modifier in the optical glass. The mold coated with Pt/Ir films can effectively reduce the interaction between the mold and optical glass. In the case of glass containing certain network modifiers, such as BaO, it can degenerate the Pt/Ir films and subsequently suppress the anti-stick effect.
Wu, Jia-rong, and 吳佳融. "Effect of applied stress on copper/tin thin film interfacial reaction." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/01014820293746296698.
Full text中興大學
化學工程學系所
95
With the electronic products becoming small, thin and light, the flip-chip technology is the trend of the package because of its small package size and excellent performance. The interfacial reaction between solder bump and under bump metallization is one of the important subjects in the flip chip reliability concerns. But at the process of microelectronic packaging, the electronic products that could be affected by the environment of the packaging and the property of products’s material could be strain. In this study, effect of applied stresses on the copper/tin thin film interfacial reaction can be dicussed. In the study of reflow, the samples were reflowed at 260 ℃ for durations ranging from 10min to 95 min. We use the 50 min as the ts, before the ts can be solid state reaction and after the ts can be liquid solid raction .After 40min,under without applied stresses , the copper have be reactioned completely, the intermetallic Cu6Sn5 can detected and at 45min ,the intermetallic compound began ripening reaction. And we can found that the intermetallic compound have spallen from the interface. With the time gone, the sizes of the intermetallic compound can grow bigger ontinuously. The morphololgy of the intermetallic compounds is hexagonal and morphology of intermetallic compound spalling from the interface is hexagonal. Based on microstructural analyses, a possible mechanism for the growth, disappearance, and spalling of the intermetallic compounds was proposed. In the study of isothermal solid-state aging, we put the sample in the oven, and solid-state aging at temperatures of 120℃, 150℃ and 170℃. The duration of solid-state aging is from 1day to 40day. Under different of applied stresses,it could product the same intermitallic compound. With time gone, the area of Ta from the interface become more and more. And under the applied stresses, the area of Ta from the interface can more than the area of Ta from the interface without the applied stresses. Based on microstructural analyses, a possible mechanism for the growth, disappearance, and spalling of the intermetallic compounds was proposed.
Su, Tien-min, and 蘇天民. "Core-Shell Nanoparticles Prepared by Interfacial Redox Reaction in SDS Microemulsion." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/19157701671279478257.
Full textChiang, Yu-Yen, and 江昱彥. "The Interfacial Reaction of SnAgIn Pb-Free Solder on Cu Substrates." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/53580872795950616260.
Full text國立中央大學
材料科學與工程研究所
99
This thesis investigated the interfacial reaction between Sn-Ag-In lead-free solder and Cu substrates. Two composition of solder, 94Sn-3Ag-3In and 80Sn-3Ag-17In, were employed. the addition of indium decreases the melting point of 94Sn-3Ag-3In and 80Sn-3Ag-17In to 214.7 and 193.3℃, respectivily. When increaseing the amount of indium, the pasty range increases. due to partial melting of solder. The amount of Sn affects the undercooling despite the amount of external additives. The interfacial intermetallic compound are Cu6(Sn,In)5 in Sn-Ag-In system solder and Cu6Sn5 in SnAgBi and SnAgBiIn solder. Because the addition of Bi increase the solubility of In in Sn. The activation energy were 23 and 24.5 KJ/mol in 94Sn-3Ag-3In and 80Sn-3Ag-17In, respectivily. The value is half of that in SnAgBiIn. The Bi could enhance the dissolution of Cu in solder. The white particals that formed inside the bulk solder of 94Sn-3Ag-3In are ζ phase, a solid solution of Ag4Sn and Ag3In, and the particles in 80Sn-3Ag-17In should be Ag2In+ζ phase. In solid state reaction. The activation energy are 64.92 and 219.8 KJ/mol in 94Sn-3Ag-3In and 80Sn-3Ag-17In, respectivily. The white particals inside bulk solder should be Ag3Sn+ζ phase and Ag2In+ζ phase in 94Sn-3Ag-3In and 80Sn-3Ag-17In, respectivily.
Chen, Jun-Yuan, and 陳俊元. "The Research of Lead-Free Solder Interfacial Reaction in UCSP Package." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/66308816564115066870.
Full text義守大學
材料科學與工程學系
92
In this research, the basic properties、microstructures and the aging effects of Sn-0.7Cu、Sn-2.6Ag-0.6Cu、Sn-4.0Ag-0.5Cu lead-free solder balls and conventional Sn-Pb solder ball are investigated. In addition, commercial Ultra CSP 98L device with above mentimed solder balls and Sn-Pb、Sn-3.0Ag-0.5Cu、Sn-7Zn-Al(30-40ppm)paste are placed on OSP and NiAu PCB. After reflow, samples are gone through TCT and HTS reliability tests. DSC、SEM/EDX、EPMA/WDX are then utilized to study the mechanism of the IMC formation on the interface of the solder joints and the relations among the microstructures solder joint strength and the reliability. The results show that Sn-Pb solder ball consists of Sn-rich β phase and Pb-rich α phase solid solutions and both grains grown after long time aging. On the other hand, lead-free solder balls consist of Sn-rich β phase and eutectic IMC phases. Both sizes of β grains and IMC particles increase with aging time. The roundness of the solder balls after reflow decreases with increasing melting point of the solder materials. Due to the cyclying expansion and contraction of the TCT test, cracks are initiated on the interface of the solder ball and chip after 500 cycles and failed after 1000 cycles. Due to the thickness growth of the IMC on the OSP surface finished substrate, the joint strength decreases with increasing aging time of the HTS reliability test. For NiAu substrate, Ni layer acts as a barrier layer which in turn reduces the growth of the interfacial IMC. However, the gold embrittlement may occur which reduces the mechanical strength of the solder joint.
Tsai, Jung-Ting, and 蔡榮庭. "Interfacial reaction and electrical performances between silver paste and silicon substrate." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/b2j5hk.
Full text國立臺灣科技大學
機械工程系
100
Since the silver paste plays a major role in the mass production of silicon solar cells, this research has studied its physical characteristics. This research has succeeded in optimizing the silver paste in 80 wt%~85 wt% and controlling its particle size in 1~1.5 μm spherical powder. As the firing temperature is increased, the growth trend of silver grain is improved. The result has showed that the lowest sheet resistance is 4 mΩ/sq during the 860°C sintering process. The SEM observation has showed that the formation of silver oxide is formed during the melting process of glass and triggered redox reaction of Ag crystallites to grow on the interface. It has proven that a thin layer of silicon oxide (50 nm~75 nm) was formed. The separate layer in the interface was determined successfully as: (1) Ag crystallites direct contact with silver layer (2) Ag crystallites in glass layer (3) glass layer (4) spherical nano silver particle in the glass layer; therefore the research has proposed a new model of silver and silicon interface. The special contact resistance is the lowest value of 1.92x10-4 (Ω?|cm2) in 830℃ and the highest value of 6.3x10-4 (Ω?|cm2) in 890℃; As to the single Ag crystallites is the lowest value of 2.9x10-8 (Ω?|cm2) and the highest value of 2.2x10-7 (Ω?|cm2). This research has concluded that the increase of the firing temperature will cause the excessive growth of Ag crystallites and also cause leakage current to occur. This research has also concluded that he glass transition temperature and glass additive play an important role in contact surfaces between the silicon and silver in the experiment. The difference of glass transition temperature used in the silver paste has confirmed: (1) the ability of redox reaction of silicon nitride layer (2) the control of Ag recrytallites size and (3) the solubility amount of silver in glass. The TEM results has also confirmed that the precipitation of Ag recystallites is followed from the interface glass layer, and the continuous of interface glass layer is controlled by the amount of glass addition. By means of EDS and SIMS, the measurement of the glass layer are 2~4 μm in thickness and 0.2~0.8 μm in the thinness. Due to the Ag crystallites, the formation of oxide layer occurs which is caused by the Ag diffusion. The experiment has detected 3μm length of diffusion and the activation energy is 35 kJ/mole in the general diffusive tendency. Finally, the research has also concluded that two facts of glass addition when sintering: (1) the speed of redox reaction of silicon nitride layer and (2) the thickness of glass between silver and silicon.
Wei-ShiuanWu and 吳維軒. "Investigation of interfacial reaction and microstructure of high temperature solder joint." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/7cx8w6.
Full text國立成功大學
機械工程學系
103
This research is to discuss the 95Pb-5Sn microstructure and solid/solid interfacial microstructure variation of 95Pb-5Sn solder combining with Ni/Cu UBM. Diffusion barrier Ni layer was coating on copper rods by electroless plating. Using the solders to join two rods whose diameter is 1.5mm. Those solder joints are stored isothermally at 200℃for up to 400 h and evaluate different thickness (2μm、1μm、0.5μm) of diffusion barrier prevent reaction between tin and copper ability and the tensile strength of solder joint. Experimental results show that the β-Sn precipitates with lamella in the α-Pb due to the slower cooling rate during high temperature stored end of experiment. After 95Pb-5Sn solder are combined with Ni/Cu, Sn atoms react with Ni atoms to form Ni and Sn intermetallic compound. Thus remainder P atoms are exhausted toward electroless Ni layer to produce dark P-rich layer. The thickness of interfacial intermetallic compound and P-rich layer raised with high temperature storage time increasing. After aged at 200℃ for 400h, the 2μm、1μm thickness diffusion barrier remains ability. However after aged at 200℃ for 200h, the 0.5μm diffusion barrier loses function that prevent reaction between tin and copper. The strength of joint result show that the tensile strength of the joint decrease distinctly after 200℃ thermal storage. The fracture position of solder joints at as-soldered occurred at the inside of solder. However, the fracture position tended to occur at the interfacial intermetallic compound surface with high temperature storage time increase.
Chen, Zhao-Ming, and 陳昭銘. "The study of interfacial reaction between SnBi solder and Au substrate." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/mbjuaq.
Full text國立臺北科技大學
化學工程研究所
96
The interfacial reaction between Sn-Bi solder and Au substrate grows Sn-Au intermetallic compound (IMC) mainly. The constituent of IMC depends on the composition (wt%) of Bi in the solder. When the weight percent of Bi is more than eutectic composition (57wt%), AuSn and AuSn2 would be found at interface. When the composition of Bi is 50wt%, a Sn-Au-Bi ternary metastable compound was formed and after longtime aging or the reaction temperature was increased, the ternary compound will become AuSn4. That means AuSn、AuSn2 and AuSn4, three different Sn-Au IMC will be co-existing at the interface. After longtime aging there are some Bi-rich segregation in the intermetallic compound and others which segregate between IMC and solder become a continuous layer. Based on reaction kinetics, we plotted the IMC thickness vs the square root of time and obtained a linear relationship between these two variables by means of linear regression model. The figure shows a straight line, which means that the growth of IMC is controlled by diffusion mechanism. In the figure, we also know that thickness and growth rate constant (k) are increasing with time and temperature for a specific composition of Bi but decreasing with the composition of Bi in the solder under the fixed conditions of temperature and reaction time. Then we substitute the growth rate constant (k) and temperature into Arrhenius equation, we would obtain the reaction activity energy (Q). When the solder is eutectic, the result shows that the reaction activity energy is the lowest and it decreases when the composition of Bi increases.
Farner, Budarz Jeffrey Michael. "Lights, Camera, Reaction! The Influence of Interfacial Chemistry on Nanoparticle Photoreactivity." Diss., 2016. http://hdl.handle.net/10161/13369.
Full textThe ability of photocatalytic nanoparticles (NPs) to produce reactive oxygen species (ROS) has inspired research into several new applications and technologies, including water purification, contaminant remediation, and self-cleaning surface coatings. As a result, NPs continue to be incorporated into a wide variety of increasingly complex products. With the increased use of NPs and nano-enabled products and their subsequent disposal, NPs will make their way into the environment. Currently, many unanswered questions remain concerning how changes to the NP surface chemistry that occur in natural waters will impact reactivity. This work seeks to investigate potential influences on photoreactivity – specifically the impact of functionalization, the influence of anions, and interactions with biological objects - so that ROS generation in natural aquatic environments may be better understood.
To this aim, titanium dioxide nanoparticles (TiO2) and fullerene nanoparticles (FNPs) were studied in terms of their reactive endpoints: ROS generation measured through the use of fluorescent or spectroscopic probe compounds, virus and bacterial inactivation, and contaminant degradation. Physical characterization of NPs included light scattering, electron microscopy and electrophoretic mobility. These systematic investigations into the effect of functionalization, sorption, and aggregation on NP aggregate structure, size, and reactivity improve our understanding of trends that impact nanoparticle reactivity.
Engineered functionalization of FNPs was shown to impact NP aggregation, ROS generation, and viral affinity. Fullerene cage derivatization can lead to a greater affinity for the aqueous phase, smaller mean aggregate size, and a more open aggregate structure, favoring greater rates of ROS production. At the same time however, fullerene derivatization also decreases the 1O2 quantum yield and may either increase or decrease the affinity for a biological surface. These results suggest that the biological impact of fullerenes will be influenced by changes in the type of surface functionalization and extent of cage derivatization, potentially increasing the ROS generation rate and facilitating closer association with biological targets.
Investigations into anion sorption onto the surface of TiO2 indicate that reactivity will be strongly influenced by the waters they are introduced into. The type and concentration of anion impacted both aggregate state and reactivity to varying degrees. Specific interactions due to inner sphere ligand exchange with phosphate and carbonate have been shown to stabilize NPs. As a result, waters containing chloride or nitrate may have little impact on inherent reactivity but will reduce NP transport via aggregation, while waters containing even low levels of phosphate and carbonate may decrease “acute” reactivity but stabilize NPs such that their lifetime in the water column is increased.
Finally, ROS delivery in a multicomponent system was studied under the paradigm of pesticide degradation. The presence of bacteria or chlorpyrifos in solution significantly decreased bulk ROS measurements, with almost no OH detected when both were present. However, the presence of bacteria had no observable impact on the rate of chlorpyrifos degradation, nor chlorpyrifos on bacterial inactivation. These results imply that investigating reactivity in simplified systems may significantly over or underestimate photocatalytic efficiency in realistic environments, depending on the surface affinity of a given target.
This dissertation demonstrates that the reactivity of a system is largely determined by NP surface chemistry. Altering the NP surface, either intentionally or incidentally, produces significant changes in reactivity and aggregate characteristics. Additionally, the photocatalytic impact of the ROS generated by a NP depends on the characteristics of potential targets as well as on the characteristics of the NP itself. These are complicating factors, and the myriad potential exposure conditions, endpoints, and environmental systems to be considered for even a single NP highlight the need for functional assays that employ environmentally relevant conditions if risk assessments for engineered NPs are to be made in a timely fashion so as not to be outpaced by, or impede, technological advances.
Dissertation
Chen, Wan-Ching, and 陳琬菁. "Interfacial reaction of the Ni/Sn-xZn/Cu sandwich structure couples." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/43631592900081581432.
Full text國立臺灣科技大學
材料科學與工程系
101
In this study, the Sn-Zn alloys were used as the solders because of its low cost and the melting point is closer to the conventional Sn-Pb solder. However, BGA and FC technology are two of the mainstreams applied to the electronic packaging widely, and the Ni/solder/Cu structure is the most common one. Therefore, this study demonstrates interfacial reaction of the Ni/Sn-xZn/Cu sandwich structure couples, the purpose is to investigate whether the Zn content of the Sn-Zn alloy, inter-diffusion between Cu and Ni atoms and the thickness of the solders will effect the formation of IMC phases. The results reveal that the Zn content of the Sn-Zn alloy and the diffusion of Cu atoms will affect the formation of IMC phases. When the Zn content is 1 wt%, the (Ni, Cu)3Sn4 phase was formed on the interface of the Ni side after soldering. Then, the (Ni, Cu)3Sn4 phase changed into the (Cu, Ni, Zn)6Sn5 phase after aging for 40 h. While the Zn content is more than 5 wt%, the Ni5Zn21 phase was formed on the interface of the Ni side, and the Cu5Zn8 phase was formed on the interface of the Cu side. After long-term aging, the Cu5Zn8 phase departed from the interface, and the Sn atoms refilled the vacancies. Then, the (Cu, Zn)6Sn5 phase was formed on the interface between the Cu5Zn8 phase and the Cu substrate. The thickness of the solders were decreased to 0.5 mm to make the Cu atoms diffuse to the Ni side more quickly, then cause the transformation of IMC phase on the Ni side.
Liu, Pei-Chi, and 劉培基. "The interfacial reaction between Sn-Zn series solders and Ag substrate." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/82957039372385593735.
Full text國立成功大學
材料科學及工程學系碩博士班
92
The drawbacks of Sn-Zn based solders could be improved by alloying modification. This study investigated the effect of various alloying elements, Al, Ag and Ga, on the wetting behavior between the Sn-Zn based solders and Cu/Ag substrates. On the other hand, the interfacial reaction between the Sn-Zn based solders and Ag substrate were rarely studied before. The solid-liquid and solid-solid reactions of Sn-Zn based solders were also investigated, and the intermetallic compounds (IMCs) formed at interface were identified and the growth behaviors were discussed. The microstructure of Sn-Zn-0.5Ag-0.1Al-0.5Ga solder consists of needle Zn-rich phase and AgZn3 distributed in the Sn matrix. This solder performed the best wetting properties (shortest wetting time and largest wetting force) as compared to other solders (Sn, Sn-9Zn, Sn-Zn-0.5Al, Sn-Zn-XGa and Sn-8Zn-3Bi). The solid-liquid reaction at 250℃ gives rise to a Ag-Zn two-layer structure between Ag substrate and Sn-9Zn, Sn-Zn-0.5Al, Sn-Zn-0.5Ga and Sn-8Zn-3Bi. XRD and elemental line-scan results revealed, one layer to be γ-Ag5Zn8 which exists close to the solder and the other layer as ζ-AgZn next to the Ag substrate. The IMC content of Sn was not observed at all. At the interface between Sn-Zn-0.5Ag-0.1Al-0.5Ga solder and Cu, Ag substrate, the γ-Cu5Zn8, ζ-AgZn and γ-Ag5Zn8 were formed respectively during the solid-liquid reaction at 250℃. During the solidification, the ε-AgZn3 was formed at interface due to the reaction between Ag and Zn of the solder. The kinetic values of IMC growth could be calculated by measuring the thickness of IMCs after solid-liquid reaction at different temperature for different time. The results of calculation revealed that the growth of Ag-Zn IMC formed at the interface between Sn-Zn-0.5Ag-0.1Al-0.5Ga solder and Ag was diffusion controlled (n = 0.5), and the activation energy of growth was 126.3 KJ/mol. On the other hand, the growth of Cu5Zn8 formed at Cu substrate was reaction controlled (n = 1), and the activation energy was 24.3 KJ/mol. After 150℃ aging treatment, the interfacial morphologies between Ag substrate and Sn-Zn based solders (Sn-9Zn, Sn-Zn-0.5Al and Sn-Zn-0.5Ag-0.1Al-0.5Ga) were similar. The reaction layers were transformed from scallop-like to continuous. With increasing aging time, the growth of Ag3Sn increases and it moves forward and very close to the substrate. The mixture structures of Ag3Sn and Ag-Zn layer were eventually formed at the interface.
Tsai, Yu-Cheng, and 蔡育成. "A study of the interfacial reaction in a Ta2N/Si(100) system." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/52641978658800739493.
Full text國立臺灣科技大學
機械工程系
92
We studied the thin film structure and interfacial reaction of tantalum nitride deposited on a Si(100) wafer with a diameter of 12 inches. The tantalum nitride film was obtained by a sputtering method. The thickness of the film was about 30 nm. After the tantalum nitride film was formed, annealing processes were carried out in a tube furnace with a vacuum level of 5 × 10-5 torr. The samples were annealed at temperatures ranging from 500, 600, 800, 900, and 1000oC for one hour in the vacuum furnace and cooled by furnace cooling. We studied the properties of the tantalum nitride film after the annealing processes through XRD, AES, HRTEM, SEM, and AFM analyses. We found that the film of tantalum nitride was amorphous in the as-deposited condition, and turned into HCP crystal structure as the annealing temperature increased. In the TEM study for the sample in the plane-view condition, we found that the grain size of the Ta2N increased as the annealing temperature increased. In the cross-sectional TEM study, we observed there was an amorphous layer in the interface between the tantalum nitride and Si wafer. However, the thickness of the amorphous layer remained the same in various annealing temperatures. The Ta2N film did not react with the silicon substrate. Therefore, it is a good barrier film for the IC processes. In the annealing process at 1000oC, we observed the precipitation of a silicide with rectangular shape residing in the silicon wafer along the interface between Ta2N and Si substrate. From the EDX analysis, we found the silicide contained the signal of Cr which indicated the Si wafer was contaminated during the annealing process in the tube furnace. However, the silicide with unknown selected area diffraction patterns could be a new silicide since it could not match with any of the known data.
Zheng-XueTsai and 蔡政學. "The Interfacial Reaction on Pd-Coated Cu Wire Bonds Under Current Stressing." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/87407535661362624100.
Full text國立成功大學
材料科學及工程學系碩博士班
100
The influence of palladium in the interfacial reactions of copper wire bonding under current stressing is reported in this study. At the as-bonded step, Pd dissolved into a Cu ball bond and then gathered at the edge of the Cu ball, forming an anti-oxidation layer. The growth rate of IMCs under current stressing depends on the type of wire bonds and the direction of the current. The interfacial reaction at the anode, where electrons flow from Cu wire bonds to the Al pad, is faster than that of the cathode, where electrons flow from the Al pad to Cu wire bonds. This is probably because the dominate diffusion species in Cu-Al IMCs is copper. Results show that the existence of Pd restrained the growth rate of IMCs due to the formation of the Pd-enriched layer near the interface at the anode which acted as a diffusion barrier; however, a notch was formed at the cathode and the effect on the IMC growth rate could be neglected there. This may be the reason why Pd-coated copper wires show better bonding reliability than pure copper wires in the wire bonding process.
Hsu, Andrew Chia-Ming, and 許家銘. "A generalized phenomenological model for the effect of electromigration on interfacial reaction." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/16171356103196698710.
Full textChiang, Jeng-Yu, and 江政諭. "Interfacial reaction and joint strength of In-Bi solder on Cu substrate." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/ykkepa.
Full text國立中央大學
化學工程與材料工程學系
106
This study investigates the interfacial reaction of 50In-50Bi/Cu and In/Cu. The interfacial reaction is classified into liquid-state reaction and solid-state reaction. The reaction evolution was analyzed by scanning electron microscopy to observe the microstructure, X-ray diffraction, and electron probe X-ray microanalysis to characterize the intermetallic compounds (IMCs) at the interface. Therefore, the growth behavior of IMCs is discussed through kinetics. To know the influence of solder joints during thermal processes, shear tests were carried out. In a 50In-50Bi/Cu system, an interfacial IMC, Cu11In9, was formed at 120 °C. In addition, the IMC thickness increased with reflow time. The interfacial IMC separated into two layers during 30-minutes reflow. The upper part was Cu11(In,Bi)9 which contained more Bi than the lower part of IMC. The growth mechanism of Cu11In9 in this system at 120 °C was diffusion-controlled by kinetics. In the In/Cu liquid state reaction, the interfacial IMCs are Cu11In9 and CuIn2, and the growth rate of Cu11In9 in the 50In-50Bi/Cu system was slow during 40 °C, 60 °C, and 70 °C aging processes. The thickness of the interfacial IMCs apparently increased when the aging temperature rose to 80 °C. As a result of the In/Cu solid-state reaction, CuIn2 existed as a low-temperature metastable phase under 50 °C. Moreover, CuIn2 tended to transform into Cu11In9 above 70 °C. For 50In-50Bi/Cu shear tests, the shear strength of solder joints increased with the aging time at various temperatures. In addition, the cases of brittle fracture decreased after aging. In conclusion, long-term aging could improve the mechanical properties of the 50In-50Bi/Cu system in this experiment.
Chen, Chieh Fu, and 陳玠甫. "The interfacial reaction of Co/Solid-state Sn-3.5Ag Pb-free solder." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/17076111075967518693.
Full text國立清華大學
工程與系統科學系
104
Under bump metallization(UBM) is an important issue in packaging industry, because it directly effects the reliability and the life time of solder joint. To overcome the failure of solder joints by Ni3P in the Ni-P UBM, the Co-bases UBM becomes the substitute of the Ni-P UBM, because of the well diffusion-barrier capability, better reliability and acceptable solderability. On the other hand, the Sn-3.5Ag solder is the one of the replacement for lead-solder. Because the Sn-3.5Ag solder has the better elastic modulus and the lower coefficient of thermal expansion. The addition of Ag in solder can decrease the growth rate of intermetallic compounds (IMCs). For these reasons, the Sn-3.5Ag solder becomes the prefer options in packaging industry. In this study, we systematically investigated the solid-state interfacial reaction between the Sn-3.5Ag and the Co substrate through different aging time at temperature of 150℃, 170℃ and 190℃, respectively. Based on the results from XRD and EDX, CoSn3 , Ag3Sn and CoSn4 IMCs are formed in this system. The CoSn3 IMC layer grows thicker with longer reaction time and higher temperature. The kinetic analysis shows that the formation of CoSn3 is mainly control by the interfacial reaction in the beginning. When the thickness of CoSn3 over the critical region, the mechanism changed to diffusion control. The activation energy of CoSn3 is calculated to be 122.47kJ/mole. The diffusivity of Co and Sn in the IMC at 190℃ is 1.60*10-13 cm2/s and 2.11*10-12 cm2/s, respectively. The result of ball push test shows that the shear strength of solder joint decreased after solid-state aging. Most of the solder joints are the ductile fracture. Only 3 of the long-time solid-state aging solder joints showed both ductile fracture and brittle fracture. The coarsening of holes is the main reason to form the brittle fracture.