Academic literature on the topic 'Interfacial melting'
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Journal articles on the topic "Interfacial melting"
Mouritsen, Ole G., and Martin J. Zuckermann. "Model of interfacial melting." Physical Review Letters 58, no. 4 (January 26, 1987): 389–92. http://dx.doi.org/10.1103/physrevlett.58.389.
Full textBesold, Gerhard, and Ole G. Mouritsen. "Competition between domain growth and interfacial melting." Computational Materials Science 18, no. 2 (August 2000): 225–44. http://dx.doi.org/10.1016/s0927-0256(00)00101-4.
Full textMondolfo, L. F., N. L. Parisi, and G. J. Kardys. "Interfacial energies in low melting point metals." Materials Science and Engineering 68, no. 2 (January 1985): 249–66. http://dx.doi.org/10.1016/0025-5416(85)90414-8.
Full textChou, T. C., A. Joshi, and J. Wadsworth. "Solid state reactions of SiC with Co, Ni, and Pt." Journal of Materials Research 6, no. 4 (April 1991): 796–809. http://dx.doi.org/10.1557/jmr.1991.0796.
Full textShakya, Gazendra, Samuel E. Hoff, Shiyi Wang, Hendrik Heinz, Xiaoyun Ding, and Mark A. Borden. "Vaporizable endoskeletal droplets via tunable interfacial melting transitions." Science Advances 6, no. 14 (April 2020): eaaz7188. http://dx.doi.org/10.1126/sciadv.aaz7188.
Full textLi, Chong He, Yong Hui Gao, Xiong Gang Lu, Wei Zhong Ding, Zhong Ming Ren, and Kang Deng. "Interaction between the Ceramic CaZrO3 and the Melt of Titanium Alloys." Advances in Science and Technology 70 (October 2010): 136–40. http://dx.doi.org/10.4028/www.scientific.net/ast.70.136.
Full textKruskopf, Ari, and Lauri Holappa. "Scrap melting model for steel converter founded on interfacial solid/liquid phenomena." Metallurgical Research & Technology 115, no. 2 (December 5, 2017): 201. http://dx.doi.org/10.1051/metal/2017091.
Full textTsao, J. Y., P. S. Peercy, and Michael O. Thompson. "Interfacial overheating during melting of Si at 190 m/s." Journal of Materials Research 2, no. 1 (February 1987): 91–95. http://dx.doi.org/10.1557/jmr.1987.0091.
Full textChen, Mingguang, Junzhu Li, Bo Tian, Yas Mohammed Al-Hadeethi, Bassim Arkook, Xiaojuan Tian, and Xixiang Zhang. "Predicting Interfacial Thermal Resistance by Ensemble Learning." Computation 9, no. 8 (August 2, 2021): 87. http://dx.doi.org/10.3390/computation9080087.
Full textSadtchenko, Vlad, and George E. Ewing. "Interfacial melting of thin ice films: An infrared study." Journal of Chemical Physics 116, no. 11 (March 15, 2002): 4686–97. http://dx.doi.org/10.1063/1.1449947.
Full textDissertations / Theses on the topic "Interfacial melting"
Baird, Russell A. "Novel techniques for interfacial tension and contact angle measurements in polymer/CO2 systems." Connect to this title online, 2005. http://hdl.handle.net/1811/306.
Full textTitle from first page of PDF file. Document formatted into pages; contains 27 p.; also includes graphics Includes bibliographical references (p. 24-25). Available online via Ohio State University's Knowledge Bank.
Maeda, Nobuo, and nobuo@engineering ucsb edu. "Phase Transitions of Long-Chain N-Alkanes at Interfaces." The Australian National University. Research School of Physical Sciences and Engineering, 2001. http://thesis.anu.edu.au./public/adt-ANU20011203.151921.
Full textHuaiyu, Yang. "Crystallization of Parabens : Thermodynamics, Nucleation and Processing." Doctoral thesis, KTH, Teknisk strömningslära, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-122228.
Full textQC 20130515
investigate nucleation and crystallization of drug-like organic molecules
Lin, Shih-Yen, and 林士硯. "Thermal Property、Microstructure and Interfacial Reactions of In-Bi-Sn Low-Melting Point Thermal Interfacial Alloys." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/23875755282802094116.
Full text國立臺灣大學
材料科學與工程學研究所
95
As the developing of electronic industry and consuming electronic products proceeding toward high performance、high power and low power dissipation, the demand of the heat dissipation of IC component have been promoted. The heat dissipation of conventional thermal interface materials is challenged by the increasing demand for higher frequency and higher power. Therefore, this study adopts Low-melting point alloy In-32.5Bi-16.5Sn as thermal interface material, and tries to make use of the high thermal conductivity of metal to deduce the thermal budget at the interface between ship and intergraded heat spreader. This investigation includes the interfacial reaction between In-32.5Bi-16.5Sn alloy and metal substrates, calculating the kinetic of intermetallic compounds and dissolution rates of different substrates. Metallic substrates are chosen for real condition: Cu substrate processes high thermal conductivity, Ni-electroplated layer uses as a diffusion barrier, Au usually uses as an oxidation protective player or a wetting layer. Finally, according to the high conductivity of Cu substrate, the thermal resistance of Cu/In-32.5Bi16.5Sn/Cu is measured. The results show that the intermetallic compound formed at the interface of In-32.5Bi-16.5Sn/Cu is Cu6(In, Sn)5. The growth of Cu6(In, Sn)5 compound is diffusion-controlled, and the activation energy for the growth of Cu6(In, Sn)5 compound is calculated to be 2.86 kJ/mole. The intermetallic compound formed at the interface of In-32.5Bi-16.5Sn/Ni is Ni3(Sn, In)4, and the growth of Ni3(Sn, In)4 compound is diffusion-controlled. The activation energy of Ni3(Sn, In)4 intermetallic compound is calculated to be 52.15 kJ/mole. The intermetallic compound formed at the interface In-32.5Bi-16.5Sn/Au could be divided by temperature: (1) AuIn2、AuIn intermetallics are formed respectively at 80℃(2) AuIn2、AuIn、Au7In3 intermetallics are observed respectively above 100℃. The growths of AuIn2 and Au7In3 compounds are diffusion-controlled, and the activation energies for AuIn2 and Au7In3 compounds are calculated to be 37.64 kJ/mole and 79.69 kJ/mole, respectively。In addition, the maximum consuming thickness of Ni-electroplated layer is about 3~4 μm, which is one fifth of the maximum consuming thickness of Cu substrate. The thermal impedance of Cu/In-32.5Bi-16.5Sn/Cu at 100W has similar increasing trend with the growth of Cu6(In, Sn)5 compound.
Chen, Chih-Hao, and 陳志豪. "Development of Low Melting Solder Alloy and Analysis of Interfacial Reaction and Reliability." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/8bbh93.
Full text國立中央大學
化學工程與材料工程學系
105
Over the past several decades, devices and technologies that entail substrate applications have been widely developed for use in the semiconductor industry. Some new technologies are receiving a lot of attention from researchers, including three-dimensional integrated circuits (3D-IC), biosensors, flexible flat-panel displays, and molecular machinery. All of these new technologies require product assembly before they can become widely available. However, many obstacles must be overcome with respect to these assembling processes. One of the most important technological issues is the low thermal budget. The 200–300 °C temperatures used in conventional lead-free-solder assembling and manufacturing presents challenges to the functionality of these technologies. As such, it is necessary to develop low-melting solders with processing temperatures low enough for these innovative technologies to maintain their functionality during the soldering process. In this study, we investigated two low-melting alloy systems, Sn-In-Bi and In-Bi. In the Sn-In-Bi system, we used 16.5Sn-51In-32.5Bi, 17Sn-26In-57Bi, and 53Sn-10In-37Bi compositions with melting peak temperatures of 56.30 °C, 82.14 °C, and 106.21 °C, respectively. In the In-Bi system, we used 68In-32Bi, 50In-50Bi, and 33In-67Bi compositions with melting peak temperature of 75.80 °C, 95.72 °C, and 116.03 °C, respectively. In this paper, we present the interfacial reaction on the Cu substrate for each alloy with different numbers of reflow cycles and temperatures. In the Sn-In-Bi system, we found the only intermetallic compound (IMC) formed at the interface to be Cu6(In, Sn)5, with different percentages for the In substitution. In the In-Bi system, we found the IMCs formed at the interfaces of 68In-32Bi/Cu, 50In-50Bi/Cu, and 33In-67Bi/Cu to be CuIn2, Cu11In9, and Cu2In, respectively. We found the growth rate of the Cu11In9 IMC formed between the 50In-50Bi alloy and Cu substrate to be quite slow. In addition, we used the shear test to analyze the reliability of these low-melting alloys. Our shear test results indicate that the 17Sn-26In-57Bi and 50In-50Bi alloys have the best shear strengths in the Sn-In-Bi and In-Bi systems, respectively. Compared with the shear strength results and fracture modes of the 17Sn-26In-57Bi and 50In-50Bi alloys, 17Sn-26In-57Bi exhibited a higher shear strength value and ductile fracture percentage than the 50In-50Bi alloy. We utilized samples made with the 17Sn-26In-57Bi and 50In-50Bi solders in an electromigration analysis and found the lifetimes of the 50In-50Bi samples to be around three times longer than those of 17Sn-26In-57Bi. However, compared with other low-melting alloys, 17Sn-26In-57Bi exhibits the best shear test results and 50In-50Bi the greatest electromigration resistivity.
Wu, CHIH-TING, and 吳致廷. "The Effect of Interfacial Structure on The Photo-induced Melting of Gold Nanorod in Gold Nanorod@non-uniform Silica Core-Shell Nanosystem." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/98334055868339668115.
Full text國立中正大學
化學暨生物化學研究所
104
This thesis focuses on the effect of the interfacial structure between gold nanorod(AuNR)and silica in the photo-induced melting of the AuNR core. We synthesized silica coated gold nanorod with non-uniform thickness in major and minor axes(AuNR-nu-SiO2)as a basic nanosystem. The particle side-thickness(ST)and end-thickness(ET) are well controlled with the typical values of ca. 12 nm for ST and ca. 1 nm for ET. There are two kinds of interfacial structures between AuNR and silica we proposed herein, one is chemical bonding and the other one is physical adsorption. The former is Au-S covalent bonding, symbolized as AuNR-SH-nu-SiO2, and the latter is physical adsorption of CTAB on the AuNR surface, symbolized as AuNR-CTAB-nu-SiO2. The chemical bonding of the interfacial structure was introduced into the nanosystem by choosing the precursor of the sol-gel process as (3-mercaptopropyl)trimethoxysilane (MPS) for the silica coating The physisorption of the interfacial structure in the other nanosystem was accomplished by the use of tetraethyl orthosilicate (TEOS) as the precursor of the sol-gel process while the CTAB remain intact to the AuNR surface. Two nanosystems with different interfacial structures were designed to demonstrate a clear difference for the heat conductivity along the AuNR side to the silica and were expected that we should be able to observe different photo-induced melting products. It is well-known that AuNR will efficiently transform photon energy by light absorption to heat at its surface plasma resonance (SPR). Also, the transportation rate of heat flux is influenced by the porosity of the coated silica. In order to extract a clear evidence regarding the interfacial structure effect on the photo-induced melting process, we need to confirm that the porosity of the coated silica in both nanosystems are similar to begin with. The porosities were confirmed by examining the extent of the SPR spectral shift and also data collected from the surface area and porosimetry analyzer. The results of our photo-induced melting measurements clearly indicate that the melting process in AuNR-SH-nu-SiO2 system follows the conventional melting after absorbing single pulsed photon energy, AuNR melts to give sphere or shorter rod. A high yield of ca. 70% for such melting products was observed without any indication for the spilt-melting products. However, in AuNR-CTAB-nu-SiO2 nanosystem, after laser irradiation the split-melting products was clearly observed to give ca. 40% yield while the yield of the melting products is about 20%. We rationalized the split-melting result compared to the conventional melting process by the only reason that the temperature difference between the central region of AuNR and its ends is greatly enhanced in the AuNR-CTAB-nu-SiO2 nanosystem. The enhanced temperature gradient are attributed to the poorer thermal conductivity through its interface with weaker interaction. This less efficient thermal conductivity then results in higher temperature retained in the central region of the AuNR. Additionally, we also increased the both directions of side and end thickness of AuNR-CTAB-nu-SiO2. In those cases, we observed that increased percentage of the AuNRs melting particles via conventional pathway as we increased the thickness. It can be contributed by that the heat flux becomes more and more isotropic. Keywords:Gold nanorod, photo-induced
Book chapters on the topic "Interfacial melting"
Yip, S. "Simulation Studies of Interfacial Phenomena — Melting, Stress Relaxation and Fracture." In Molecular Dynamics Simulations, 221–34. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84713-4_20.
Full textCarbucicchio, M., G. Palombarini, R. Ciprian, S. Tosto, M. Rateo, and G. Sambogna. "Interfacial microstructure and properties of dissimilar steels joined by high energy beam melting processes." In ISIAME 2008, 473–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01370-6_63.
Full textBettermann, H., and M. Getzlaff. "Melting Processes of Magnetic 3d-Metal Nanoparticles on Surfaces." In Encyclopedia of Interfacial Chemistry, 490–96. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-409547-2.12977-4.
Full textPanda, Maheswar. "Ferroelectric, Piezoelectric and Dielectric Properties of Novel Polymer Nanocomposites." In Multifunctional Ferroelectric Materials. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96593.
Full textHan, Chang Dae. "Rheology of Particulate-Filled Polymers, Nanocomposites, and Fiber-Reinforced Thermoplastic Composites." In Rheology and Processing of Polymeric Materials: Volume 1: Polymer Rheology. Oxford University Press, 2007. http://dx.doi.org/10.1093/oso/9780195187823.003.0018.
Full textConference papers on the topic "Interfacial melting"
Zhang, Yuwen, and J. K. Chen. "An Interfacial Tracking Method for Ultrashort Pulse Laser Melting and Resolidification of a Thin Metal Film." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32475.
Full textLi, Zheng, Mo Yang, and Yuwen Zhang. "Lattice Boltzmann Method Simulation of 3-D Melting Using Double MRT Model With Interfacial Tracking Method." In ASME 2016 Heat Transfer Summer Conference collocated with the ASME 2016 Fluids Engineering Division Summer Meeting and the ASME 2016 14th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/ht2016-7407.
Full textChen, Qicheng, Mo Yang, Yuwen Zhang, and Yaling He. "Numerical Simulation of Melting in Porous Media via an Interfacial Tracking Model." In 42nd AIAA Thermophysics Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 2011. http://dx.doi.org/10.2514/6.2011-3945.
Full textHuang, Jing, Yuwen Zhang, J. K. Chen, and Mo Yang. "Effect of Energy Deposition Modes on Ultrafast Solid-Liquid-Vapor Phase Change of a Thin Gold Film Irradiated by a Femtosecond Laser." In 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-23050.
Full textAnsari, Naseem, Chokri Guetari, Richard Martin, and Tim Thompson. "A Numerical Study of the Role of Interfacial Heat Transfer in Forced Convection Ice Melting Modeling." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32037.
Full textAfrin, Nazia, Yuwen Zhang, and J. K. Chen. "Uncertainty Analysis of Melting and Resolidification of Gold Film Irradiated by Nano- to Femtosecond Lasers Using Stochastic Method." In ASME 2016 5th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/mnhmt2016-6428.
Full textShou, Wan, and Heng Pan. "Transport and Interfacial Phenomena in Nanoscale Confined Laser Crystallization." In ASME 2017 12th International Manufacturing Science and Engineering Conference collocated with the JSME/ASME 2017 6th International Conference on Materials and Processing. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/msec2017-2818.
Full textZhou, Min-Bo, Hong-Bo Qin, Xiao Ma, and Xin-Ping Zhang. "Interfacial reaction and melting/solidification characteristics between Sn and different metallizations of Cu, Ag, Ni and Co." In High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582442.
Full textFeng, Biao, and Li-Wu Fan. "Interfacial Heat Transfer Between Erythritol and Xylitol Crystals As a Mixture Heat Storage Material." In ASME 2018 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/imece2018-87195.
Full textHill, Stephen D., and Prateen Desai. "Plasma Torch Interaction With a Melting Substrate." In ASME 2003 Heat Transfer Summer Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/ht2003-47199.
Full text