Relevant bibliographies by topics / Interfacial defect

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Interfacial defect'

Author: Grafiati
Published: 25 May 2024

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Journal articles on the topic "Interfacial defect"

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Qin, Renyuan, Denvid Lau, Lik-ho Tam, Tiejun Liu, Dujian Zou, and Ao Zhou. "Experimental Investigation on Interfacial Defect Criticality of FRP-Confined Concrete Columns." Sensors 19, no. 3 (January 24, 2019): 468. http://dx.doi.org/10.3390/s19030468.

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Defects between fiber reinforced polymer (FRP) and repaired concrete components may easily come out due to misoperation during manufacturing, environmental deterioration, or impact from external load during service life. The defects may cause a degraded structure performance and even the unexpected structural failure. Different non-destructive techniques (NDTs) and sensors have been developed to assess the defects in FRP bonded system. The information of linking up the detected defects by NDTs and repair schemes is needed by assessing the criticality of detected defects. In this study, FRP confined concrete columns with interfacial defects were experimentally tested to determine the interfacial defect criticality on structural performance. It is found that interfacial defect can reduce the FRP confinement effectiveness, and ultimate strength and its corresponding strain of column deteriorate significantly if the interfacial defect area is larger than 50% of total confinement area. Meanwhile, proposed analytical model considering the defect ratio is validated for the prediction of stress–strain behavior of FRP confined columns. The evaluation of defect criticality could be made by comparing predicted stress–strain behavior with the original design to determine corresponding maintenance strategies.
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LUCOVSKY, GERALD. "PART I: BOND STRAIN AND DEFECTS AT Si-SiO2 AND DIELECTRIC INTERFACES IN HIGH-k GATE STACKS." International Journal of High Speed Electronics and Systems 16, no. 01 (March 2006): 241–61. http://dx.doi.org/10.1142/s0129156406003631.

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The performance and reliability of aggressively-scaled field effect transistors that include deposited high-k dielectrics and interfacial SiO 2 buffer layers are determined in large part by electronically-active defects and defect precursors at the Si - SiO 2, and internal SiO 2-high-k dielectric interfaces. A crucial aspect of reducing interfacial defects and defect precursors is associated with bond-strain driven bonding self-organizations that take place during high temperature annealing in inert ambients. These interfacial self-organizations, and intrinsic interface defects are addressed through an extension of bond constraint theory from bulk glasses to interfaces between non-crystalline SiO 2, and i) crystalline Si , and ii) non-crystalline and crystalline alternative gate dielectric materials.
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Wei, Jinfeng, Guangnan Xu, Guolin Liu, Jinwei Guo, Wang Zhu, and Zengsheng Ma. "Quantitative Characterization of Interfacial Defects in Thermal Barrier Coatings by Long Pulse Thermography." Coatings 12, no. 12 (November 26, 2022): 1829. http://dx.doi.org/10.3390/coatings12121829.

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The non-contact long pulse thermography method is commonly used to detect the defects in thermal barrier coatings (TBCs). The profile of interfacial defect in TBCs can be monitored by infrared camera under the irradiation of the excitation source. Unfortunately, the defect profile is always blurry due to heat diffusion between the defect area and the intact area. It is difficult to quantify the size of defect size in TBCs. In this work, combined with derived one-dimensional heat conduction analytical model, a non-contact long pulse thermography (LPT) method is applied to quantitatively investigate the interface defects in TBCs. Principal component analysis (PCA) and background subtraction method are used to improve the contrast of the defect profile in collected thermal images. By fitting the results between the profile of the interface defect in thermal images and the predicted shape of the model, the interface defect size can be determined. Furthermore, a simple extension of proposed method for interfacial defects with irregular shape is presented. The predicted errors for round defect with diameters of 3 mm, 5 mm and 7 mm are roughly distributed in the range of 3%~6%, which are not affected by the defect diameter.
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Zhang, Xin, and Shaoqing Wang. "Interfacial Strengthening of Graphene/Aluminum Composites through Point Defects: A First-Principles Study." Nanomaterials 11, no. 3 (March 15, 2021): 738. http://dx.doi.org/10.3390/nano11030738.

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The relationship between point defects and mechanical properties has not been fully understood yet from a theoretical perspective. This study systematically investigated how the Stone–Wales (SW) defect, the single vacancy (SV), and the double vacancy (DV) affect the mechanical properties of graphene/aluminum composites. The interfacial bonding energies containing the SW and DV defects were about twice that of the pristine graphene. Surprisingly, the interfacial bonding energy of the composites with single vacancy was almost four times that of without defect in graphene. These results indicate that point defects enhance the interfacial bonding strength significantly and thus improve the mechanical properties of graphene/aluminum composites, especially the SV defect. The differential charge density elucidates that the formation of strong Al–C covalent bonds at the defects is the most fundamental reason for improving the mechanical properties of graphene/aluminum composites. The theoretical research results show the defective graphene as the reinforcing phase is more promising to be used in the metal matrix composites, which will provide a novel design guideline for graphene reinforced metal matrix composites. Furthermore, the sp3-hybridized C dangling bonds increase the chemical activity of the SV graphene, making it possible for the SV graphene/aluminum composites to be used in the catalysis field.
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Liu, Feng, Yuan Zhu, Ruoyu Wu, Lidan Zhang, Rui Zou, Shengbing Zhou, Huiming Ning, Ning Hu, and Cheng Yan. "Interfacial mechanical properties of periodic wrinkled graphene/polyethylene nanocomposite." Physica Scripta 98, no. 8 (July 31, 2023): 085955. http://dx.doi.org/10.1088/1402-4896/ace93c.

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Abstract Molecular dynamics simulations have been performed to investigate the interfacial mechanical properties of periodic wrinkled graphene (GR) with polyethylene (PE) matrix. The influences of amplitude (H), wavelength (λ), and vacancy defect for the periodic wrinkled GR on the interfacial mechanical properties were considered and the potential mechanisms were analyzed. The results indicate that the interfacial mechanical properties of GR with periodic wrinkles are superior to that of flat GR, especially when the H / λ = 0.51 the interfacial strength enhances ∼29.3%. Through the radial distribution function (RDF) analysis we found that the stronger interfacial mechanical properties are, the more PE molecular chains are attached to the GR when the GR is separated from the PE matrix. In addition, we found that vacancy defect in periodic wrinkled GR does not always degrade the interfacial mechanical properties, and when the vacancy defect content is 20%, the interfacial mechanical properties can be improved, as the vacancy defect reduces the interfacial distance and increases the roughness of the interface.
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Chen, Yuyun, Yi Shen, Yuanming Chen, Guodong Xu, Yudong Liu, and Rui Huang. "Effects of Annealing Temperature on Bias Temperature Stress Stabilities of Bottom-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors." Coatings 14, no. 5 (April 30, 2024): 555. http://dx.doi.org/10.3390/coatings14050555.

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Defect annihilation of the IGZO/SiO2 layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (Ta) on the structure of the IGZO/SiO2 layer and the stabilities of coplanar IGZO TFTs were investigated in this work. An atomic depth profile showed that the IGZO/SiO2 layer included an IGZO layer, an IGZO/SiO2 interfacial mixing layer, and a SiO2 layer. Higher Ta had only one effect on the IGZO layer and SiO2 layer (i.e., strengthening chemical bonds), while it had complex effects on the interfacial mixing layer—including weakening M-O bonds (M: metallic elements in IGZO), strengthening damaged Si-O bonds, and increasing O-related defects (e.g., H2O). At higher Ta, IGZO TFTs exhibited enhanced positive bias temperature stress (PBTS) stabilities but decreased negative bias temperature stress (NBTS) stabilities. The enhanced PBTS stabilities were correlated with decreased electron traps due to the stronger Si-O bonds near the interfacial layer. The decreased NBTS stabilities were related to increased electron de-trapping from donor-like defects (e.g., weak M-O bonds and H2O) in the interfacial layer. Our results suggest that although higher Ta annihilated the structural damage at the interface from ion bombardment, it introduced undesirable defects. Therefore, to comprehensively improve electrical stabilities, controlling defect generation (e.g., by using a mild sputtering condition of source/drain electrodes and oxides) was more important than enhancing defect annihilation (e.g., through increasing Ta).
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Bondon, Arnaud, Khalid Lamnawar, and Abderrahim Maazouz. "Influence of Copolymer Architecture on Generation of Defects in Reactive Multilayer Coextrusion." Key Engineering Materials 651-653 (July 2015): 836–41. http://dx.doi.org/10.4028/www.scientific.net/kem.651-653.836.

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Several polymers can be combined in one multilayer structure by reactive coextrusion. Tie-layers are often used to compatibilize adjacent layers and may reduce or suppress interfacial instabilities and defects in multilayer coextrusion flow. However, a new additional defect defined as “grainy” defect can be observed. In our best of knowledge, no study in literature has been dedicated to understand its origin. The phenomena are quite complex due to the coupling of the effects of flow and the physico-chemical mechanisms at the interface. The aim of this work is to understand the relationship between the instabilities and defects encountered in multilayer coextruded films and the role of the copolymer formed in-situ between tie and barrier layers. Polyamide 6 (PA6) and ethylene-vinyl alcohol copolymer (EVOH) were used as barrier layers sandwiched in polypropylene (PP) with or without tie-layer based on polypropylene grafted maleic anhydride (PP-g-MA). Influence of process parameters and nature of the polymer pair on the generation of “grainy” defect has been assessed and related to the rheological and the physico-chemical properties of layers. These experiments showed that this defect appeared mainly in the compatibilized EVOH system and could be distinguished from the usual coextrusion instabilities. Interfacial properties between tie and barrier layers have been investigated. Shear stress relaxation experiments have been carried out on reactive tie/barrier bilayers. Due to the interphase generated in-situ, the relaxation behavior was altered by extending the relaxation time. Investigation of interfacial morphology highlighted that the copolymer architecture significantly affected the interface/interphase development and interface roughness. Hence, relationships between relaxation process, interfacial morphology and copolymer structure were correlated with the generation of grainy defects in coextrusion.
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Kim, Jin Mo, and Sung Won Hwang. "Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory." Molecules 26, no. 22 (November 9, 2021): 6758. http://dx.doi.org/10.3390/molecules26226758.

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We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3–0.6 wt % PVP-GQD, Vf changed from 2.27–2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.
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Pond, R. C. "TEM studies of line defects in interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 586–87. http://dx.doi.org/10.1017/s0424820100104996.

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Line defects are ubiquitious features in interfaces, and have important structural and mechanistic role. Recently, a crystallographic theory of such defects has been presented which appears to offer a comprehensive framework for their classification. The object of the present paper is firstly to outline the characterisation and classification of defects according to this treatment. Secondly, we illustrate examples of defects in the distinctive classes observed using tern, and discuss the various imaging techniques which have been employed.In the absence of a rigorous treatment of line defects in single crystals and interfaces, which would require the development of a discrete field theory, approximate methods of defect characterisation are used. The most popular method involves mapping a contour, initially constructed around a defect of interest, into a reference space. For defeats in single crystals this Burgers circuit method, introduced by Frank, is very helpful, but suffers from certain procedural inconveniences in the case of interfacial defects.
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Zhou, Mingjian, Liqing Liu, Jiahao Liu, and Zihang Mei. "Prediction and Control of Thermal Transport at Defective State Gr/h-BN Heterojunction Interfaces." Nanomaterials 13, no. 9 (April 25, 2023): 1462. http://dx.doi.org/10.3390/nano13091462.

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The control of interfacial thermal conductivity is the key to two−dimensional heterojunction in semiconductor devices. In this paper, by using non−equilibrium molecular dynamics (NEMD) simulations, we analyze the regulation of interfacial thermal energy transport in graphene (Gr)/hexagonal boron nitride (h-BN) heterojunctions and reveal the variation mechanism of interfacial thermal energy transport. The calculated results show that 2.16% atomic doping can effectively improve interfacial heat transport by more than 15.6%, which is attributed to the enhanced phonon coupling in the mid−frequency region (15–25 THz). The single vacancy in both N and B atoms can significantly reduce the interfacial thermal conductivity (ITC), and the ITC decreases linearly with the increase in vacancy defect concentration, mainly due to the single vacancy defects leading to an increased phonon participation rate (PPR) below 0.4 in the low-frequency region (0–13 THz), which shows the phonon the localization feature, which hinders the interfacial heat transport. Finally, a BP neural network algorithm is constructed using machine learning to achieve fast prediction of the ITC of Gr/h-BN two-dimensional heterogeneous structures, and the results show that the prediction error of the model is less than 2%, and the method will provide guidance and reference for the design and optimization of the ITC of more complex defect-state heterogeneous structures.
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Dissertations / Theses on the topic "Interfacial defect"

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Augustine, Anusree. "Swelling induced debonding of thin hydrogel films grafted on silicon substrate : the role of interface physical-chemistry." Electronic Thesis or Diss., Université Paris sciences et lettres, 2022. http://www.theses.fr/2022UPSLS040.

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Les revêtements d'hydrogel sont des réseaux de polymères transparents et hydrophiles capables d’abosrber plusieurs fois leur épaisseur en eau. Cependant, les contraintes induites par le gonflement du film peuvent entraîner un décollement préjudiciable de l'hydrogel ce qui peut limiter l’utilisation pratique des ces revêtements. Dans cette étude, nous proposons de décrire les mécanismes de décollement de films minces d’hydrogel en fonction de leur densité de greffage à l'interface film/substrat. Le but est de pouvoir contrôler et prédire la dégradation des revêtements hydrogel pendant le gonflement ou sous des contraintes de contact. Dans ce but, nous avons développé une méthodologie permettant de mesurer l'initiation et la propagation de la délamination induite par le gonflement de films minces d’hydrogel à partir de défauts d'interface préexistants bien contrôlés.Des films minces d'hydrogel de poly(diméthylacrylamide) (PDMA) attachés à la surface sont préparés sur des plaquettes de silicium à partir de la réticulation et du greffage simultanés (CLAG) de chaînes polymères fonctionnalisées par la chimie click thiol-ène. Cette stratégie permet de faire varier l'épaisseur du film (0.1 - 2 µm) et de contrôler le taux de gonflement du réseau, ici fixé à 2, tout en assurant une densité de réticulation homogène. Afin de faire varier la résistance de l'interface film/substrat, le substrat en silicium est greffé avec des mélanges de mercaptosilane (réactif) et de propylsilane (inerte) dans différentes proportions avant le dépôt du film mince. Alors que le mercaptosilane est capable de former des liaisons covalentes avec le réseau PDMA, le propylsilane ne réagit pas, ce qui permet de contrôler le taux de greffage du film mince d’hydrogel sur le substrat. Nous caractérisons la fraction de surface de mercaptosilane ainsi obtenue par des analyses XPS et TOF-SIMS. Par ailleurs, toujours à l’interface subtrat/film, des défauts linéaires bien contrôlés ayant une faible adhérence (largeur entre 10 et 100 µm) sont créés sur le substrat en passivant de façon localisée les groupes thiol réactifs par microlithographie. Ces défauts nucléent le décollement des films de façon bien localisée, ce qui permet ensuite de suivre la propagation de la décohésion à partir de ces défauts.Le décollement du film induit par le gonflement est réalisé sous un flux de vapeur constant assurant la saturation du film en eau. En observant le décollement progressif du film à partir des défauts linéaires préexistants, nous retrouvons un motif d’instabilité classique dit de fil de téléphone et nous montrons que le décollement résulte de contraintes de gonflement localisées proche de la ligne de décollement. Nous mesurons la vitesse de propagation du décollement dans la zone où le film est greffé sur le substrat et nous observons qu’elle augmente de deux ordres de grandeur lorsque la quantité de propylsilane dans le mélange de silanes réactifs passe de 0 à 90 %, c’est-à-dire lorsque le taux de greffage du film décroit. Un seuil d'épaisseur pour le décollement est également observé, les films pouvant se décoller étant d’autant plus minces que le taux de greffage du film ets faible. Les mesures de ce seuil sont discutées à partir d'un argument simple de mécanique de la rupture qui permet de rendre compte semi quantitativement de nos mesures
Hydrogel coatings are transparent and hydrophilic polymer networks that absorb a lot of water and can be suitable candidates for anti-mist coatings. However, swelling-induced stresses within the film can result in detrimental debonding of hydrogel and may fail. In this study, these debonding processes are investigated in the relation to the grafting density at the film/substrate interface, so as to control and predict the failure of the coatings during swelling or under contact stresses. For that purpose, we have developed a methodology consisting in monitoring the initiation and the propagation of swelling-induced delamination from well-controlled preexisting interface defects.Surface-attached poly(dimethylacrylamide) (PDMA) hydrogel thin films are prepared on silicon wafers from the simultaneous Cross-Linking And Grafting (CLAG) of functionalized polymer chains by thiol-ene click chemistry. This strategy allows to tune the film thickness (0.1-2 µm) while ensuring a homogeneous crosslinking density. In order to vary the strength of the film/substrate interface, the silicon wafer is grafted by mixing reactive mercaptosilane and unreactive propylsilane in various proportions prior to the formation of the hydrogel film. We characterize the mercaptosilane surface fraction thus obtained by XPS and TOF-SIMS analyses. Well-controlled line defects (width between 2 and 100 µm) are also created to nucleate delamination of the hydrogel from the substrate.Swelling-induced debonding of the film is achieved under a constant vapor flow ensuring water saturation. Optical observations show the progressive debonding of the film from the pre-existing line defects under the action of localized swelling stresses. We obtain a delamination pattern of typical so-called telephone cord instability. We measure the debonding propagation velocity where the hydrogel is grafted to the substrate. The debonding rate is found to decrease over two orders of magnitude when the amount of mercaptosilane in the reactive silane mixture is increased from 10% to 100% while increasing the covalent bonds between hydrogel and substrate. A threshold thickness for debonding is also observed. This threshold thickness increases with the amount of mercaptosilane used to graft the substrate. We derived quantitative values of the interface fracture energy from the measured thickness threshold with a simple fracture mechanics model
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Hariharan, Avinash [Verfasser], Gunther [Gutachter] Eggeler, and Dierk [Gutachter] Raabe. "On the interfacial defect formation mechanism during laser additive manufactering of polycrystalline superalloys / Avinash Hariharan ; Gutachter: Gunther Eggeler, Dierk Raabe ; Fakultät für Maschinenbau." Bochum : Ruhr-Universität Bochum, 2020. http://d-nb.info/1204258333/34.

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Pitthan, Filho Eduardo. "Investigação de defeitos e de métodos passivadores da região interfacial SiO2/SiC." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/156795.

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O carbeto de silício (SiC) é um semicondutor com propriedades adequadas para substituir o silício em dispositivos eletrônicos em aplicações que exijam alta potência, alta frequência e/ou alta temperatura. Além disso, é possível crescer termicamente um filme de dióxido de silício (SiO2) sobre o SiC de maneira análoga ao silício. Porém, esses filmes apresentam maior densidade de defeitos eletricamente ativos na região interfacial SiO2/SiC que no caso do SiO2/Si, o que limita a qualidade dos dispositivos formados. Assim, compreender a origem da degradação elétrica e desenvolver métodos para passivar os defeitos na região interfacial SiO2/SiC são importantes passos para o desenvolvimento da tecnologia do SiC. Buscando uma melhor compreensão da natureza dos defeitos presentes na região interfacial SiO2/SiC, a interação de estruturas SiO2/SiC com vapor d’água enriquecido isotopicamente (D2 18O) e a interação com monóxido de carbono (CO), um dos subprodutos da oxidação térmica do SiC, foram investigadas. Observou-se que a interação com CO gera cargas positivas na estrutura e que a incorporação de deutério proveniente da água é fortemente dependente da rota de formação do filme de SiO2. Sabendo que a incorporação de nitrogênio e de fósforo na região interfacial SiO2/SiC são eficientes métodos para reduzir o número de defeitos eletricamente ativos nessa região, investigou-se a incorporação de nitrogênio em estruturas de SiC através de tratamentos térmicos em amônia enriquecida isotopicamente (15NH3) e desenvolveu-se um novo método de incorporação de fósforo, fazendo sua deposição por pulverização catódica (sputtering) Os métodos de incorporação propostos resultaram em maiores quantidades de nitrogênio e de fósforo na região interfacial SiO2/SiC do que os encontrados na literatura, tornando-os promissores candidatos na passivação elétrica do SiC. Além da caracterização físico-química utilizando diferentes técnicas, também foi feita a caracterização elétrica de capacitores Metal-Óxido-Semicondutor (MOS) testando filmes de SiO2 obtidos por sputtering ou por crescimento térmico. Adicionalmente, desenvolveu-se uma rota de síntese de padrões de 18O mais estáveis ao longo do tempo para serem utilizados em análises por reação nuclear. Também foi proposta uma metodologia de quantificação de fósforo via análise por reação nuclear. Dos resultados obtidos neste doutorado, uma melhor compreensão da natureza e da origem dos defeitos presentes na região interfacial SiO2/SiC foi alcançada. Também obteve-se uma melhor compreensão de como os elementos passivadores nitrogênio e fósforo interagem nessa região.
Silicon carbide (SiC) is a semiconductor with adequate properties to substitute silicon in electronic devices in applications that require high power, high frequency, and/or high temperature. Besides, a silicon dioxide (SiO2) film can be thermally grown on SiC in a similar way to that on Si. However, these films present higher density of electrical defects in the SiO2/SiC interfacial region when compared to the SiO2/Si interface, which limits the quality of the fabricated devices. Thus, it is important to understand the origin of the electrical degradation and to develop methods to passivate the defects in the SiO2/SiC interfacial region in order to develop the SiC technology. Aiming at a better understanding of the nature of defects at the SiO2/SiC interfacial region, the interaction of SiO2/SiC structures with water vapor isotopically enriched (D2 18O) and the interaction with carbon monoxide (CO), one of the SiC thermal oxidation by-products, were investigated. It was observed that the interaction with CO generates positive charges in the structure and that the deuterium incorporation from the water vapor is strongly dependent on the formation route of the SiO2 film. Knowing that nitrogen and phosphorous incorporation in the SiO2/SiC interfacial region are efficient methods to reduce the number of electrical defects in this region, the nitrogen incorporation in SiC structures by isotopically enriched ammonia (15NH3) annealings was investigated and a new method to incorporate phosphorous, by sputtering deposition was developed The proposed incorporation methods resulted in higher amounts of nitrogen and phosphorous then those found in literature, making them promising candidates to the electrical passivation of SiC. Besides the physico-chemical characterization using different techniques, the electrical characterization of Metal-Oxide-Semiconductor (MOS) capacitors was also performed, testing SiO2 films obtained by sputtering deposition or thermally grown. Additionally, a route to synthesize 18O standards for nuclear reaction analyses that are more stable over time was developed. Besides, a methodology to quantify phosphorous by nuclear reaction analysis was proposed. From the results obtained in this PhD thesis, a better understanding of the nature and the origin of defects present in the SiO2/SiC interfacial region was obtained, as well as a better understanding on how the passivating elements nitrogen and phosphorous interact in this region.
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Guttman, Jeremy. "Polymer-based Tunnel Diodes Fabricated using Ultra-thin, ALD Deposited, Interfacial Films." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469125487.

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McAuley, Nigel Anthony. "A study of interfacial defects in hexagonal based bicrystals." Thesis, University of Liverpool, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235507.

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Kamal, Alm Hajer. "Interfacial Adhesion Failure : Impact on print-coating surface defects." Doctoral thesis, KTH, Fiber- och polymerteknologi, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-194166.

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The aim of this work was to develop a solid knowledge on formulation effects controlling offset ink-paper coating adhesion and to identify key factors of the coating and printing process affecting it. Focus lay on comprehending the impact of pigment dispersant on ink-paper coating adhesion and ultimately on the print quality of offset prints. The work covers laboratory studies, a pilot coating trial designed to produce coated material with a span in surface chemistry and structure, and an industrial offset printing trial. The lab scale studies quantified ink-paper coating adhesion failure during ink setting with a developed laboratory procedure based on the Ink-Surface Interaction Tester (ISIT) and image analysis. Additional polyacrylate dispersant resulted in slower ink setting and reduced ink-paper coating adhesion, with a dependence on its state of salt neutralisation and cation exchange, mainly in the presence of moisture/liquid water. The industrial printing trial on pilot coated papers was designed to study how these laboratory findings affected full scale offset print quality. These trials confirmed the dispersant-sensitive effect on ink-paper coating adhesion, especially at high water feeds. Evaluation of prints from the printing trial resulted in two fundamentally different types of ink adhesion failure being identified. The first type being traditional ink refusal, and the second type being a novel mechanism referred to as ink-lift-off adhesion failure. Ink-lift-off adhesion failure occurs when ink is initially deposited on the paper but then lifted off in a subsequent print unit. In this work, ink adhesion failure by this ink-lift-off mechanism was observed to occur more often than failure due to ink refusal. Print quality evaluation of the industrial prints suggested that water induced mottle was caused by a combination of ink-surface adhesion failure, creating white spots on the print, together with variation in ink layer thickness due to emulsified ink.

QC 20161019

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Casey, Siobhan. "A study of interfacial defects in semiconductor materials and metals." Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240588.

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Besson, Rémy. "Simulation à l'échelle atomique de quelques propriétés volumiques et interfaciales d'alliages ordonnés fer-aluminium." Grenoble INPG, 1997. http://www.theses.fr/1997INPG4201.

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Apres avoir elabore un potentiel semi-empirique adapte aux alliages fe - al de structures b2 et d0#3, nous avons etudie les defauts ponctuels et les joints de grains dans ces composes. A basse temperature, l'ecart a la stchiometrie b2 est accommode par des defauts d'antisite ; a plus haute temperature, des lacunes de fer apparaissent et les defauts tendent a former des complexes dont la structure est tres sensible a l'ecart a la stchiometrie. Nos calculs, reposant sur les energies de formation a temperature nulle, indiquent les types des defauts predominants, mais conduisent a des predictions quantitatives sous-estimees, ce qui souligne probablement l'importance des vibrations atomiques. Dans le compose b2 equiatomique, la diffusion des deux especes s'effectue conjointement par des cycles a quatre sauts de lacunes de fer. Bien que les energies d'activation calculees soient comparables a celles deduites de l'experience, les coefficients de diffusion calcules se revelent inferieurs aux mesures experimentales. La difference peut la encore etre attribuee a la non-prise en compte des vibrations atomiques. La seconde application concerne les structures atomiques du joint de grains symetrique de flexion autour de 001 et de plan (310) dans les composes b2 et d0#3. A basse temperature, nous obtenons, dans le compose b2 equiatomique, une unique structure stable (pseudo-symetrique) enrichie en fer, ainsi qu'une forte influence de la composition globale sur cette structure (avec segregation intergranulaire de l'element majoritaire). Dans le compose d0#3 stchiometrique, il existe une grande multiplicite de structures, celles-ci etant toujours enrichies en aluminium. L'etude structurale du joint de grains dans l'alliage b2 a haute temperature revele une transition de phases stabilisant une structure symetrique. Celle-ci etant tres energetique a basse temperature, son apparition met une fois encore en evidence l'importance des vibrations atomiques dans les composes fe - al b2.
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Adamczyk, Leslie Ann. "Understanding the Structure and Properties of Self-Assembled Monolayers for Interfacial Patterning." Diss., Virginia Tech, 2009. http://hdl.handle.net/10919/28018.

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This dissertation describes the impact of defects on monolayer properties for self-assembled monolayers (SAMs) created by interfacial patterning methods. When forming a two-dimensional interfacial pattern with n-alkanethiols on gold, the desired electrochemical properties are those of a homogeneous, solution adsorbed monolayer. However, even well-ordered SAMs contain a small degree of defects, especially at domain boundaries where two nucleating domains converge. Patterning a surface creates user-defined domain boundaries within the monolayer, potentially having a significant impact on the properties of the interface. This dissertation investigates the effect that user-created domain boundaries have on the properties of a monolayer, as studied by electrochemical impedance spectroscopy. Two patterning methods are investigated for creating user-defined domain boundaries: the soft lithography method of contact printing and site-selective reductive desorption. The electrochemical properties of homogeneous contact printed monolayers are measured and compared to those of monolayers prepared by solution adsorption. The contact printed monolayers are found to have dramatically different impedance behavior from the solution prepared monolayers, consistent with the contact printed monolayers having greater defect density. In addition, these studies show that the overall defect density depends on the concentration of the solutions used for contact printing. In this work, simple patterns are created by contact printing a pattern onto the substrate and then backfilling the remaining gold substrate by solution adsorption. Backfilling with the same alkanethiol used to create the pattern generates a homogeneous monolayer; however, it is found that the contact printed/backfilled monolayer has an impedance intermediate between the homogeneous contact printed and the homogeneous solution adsorbed monolayer. This result suggests that the backfilling process also saturates the pinhole defects associated with the contact printed areas. In addition to exploring defects that arise from contact printing, simple patterns with user-defined defects, created by site-selective reductive desorption (SSRD), were also investigated. Following the backfill step, the impedance behavior of the SSRD produced patterns was similar to that of the impedance of the initial pattern before backfilling. This important result implies that the domain boundaries play the most important role in defining the overall impedance of the patterned interface.
Ph. D.
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Chen, Jhewn-Kuang. "The role of defects during precipitate growth in a Ni-45wt% Cr alloy." Diss., This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-06062008-162241/.

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Book chapters on the topic "Interfacial defect"

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Dybkov, V. I. "Interfacial Interaction and Diffusion in Binary Systems." In Defect and Diffusion Forum, 75–80. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-35-3.75.

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Muktepavela, Faina, Georgy Bakradze, and Sara Stolyarova. "Effect of Mechanoactivation on Interfacial Interaction in Metal/Oxide Systems." In Defect and Diffusion Forum, 263–68. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-17-5.263.

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Karakostas, Th, G. P. Dimitrakopulos, J. G. Antonopoulos, and R. C. Pond. "Interfacial and Junction Line Defect Analysis for Plasticity Investigations." In Multiscale Phenomena in Plasticity: From Experiments to Phenomenology, Modelling and Materials Engineering, 205–14. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4048-5_16.

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Piccolroaz, A., G. Mishuris, and A. B. Movchan. "Perturbation of mode III interfacial cracks." In Recent Progress in the Mechanics of Defects, 41–51. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-94-007-0314-8_6.

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Fathy, D., and M. Sayah. "Defects and Interfacial Structure in Ge/Si Layers." In Microscopy of Oxidation, 299–304. London: CRC Press, 2023. http://dx.doi.org/10.1201/9781003422020-41.

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Lavrentovich, O. D. "Defects in Liquid Crystals: Surface and Interfacial Anchoring Effects." In Patterns of Symmetry Breaking, 161–95. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-007-1029-0_6.

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Barrett, Christopher, and Haitham El Kadiri. "The Deformation Gradient of Interfacial Defects on Twin-like Interfaces." In Magnesium Technology 2015, 121–25. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2015. http://dx.doi.org/10.1002/9781119093428.ch24.

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Barrett, Christopher, and Haitham El Kadiri. "The Deformation Gradient of Interfacial Defects on Twin-like Interfaces." In Magnesium Technology 2015, 121–25. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-48185-2_24.

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Pond, R. C. "The Geometrical Character of Extended Interfacial Defects in Semiconducting Materials." In Springer Series in Solid-State Sciences, 27–45. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-82441-8_3.

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Uren, M. J., and D. H. Cobden. "Generation of Random Telegraph Noise by Single Si/SiO2 Interfacial Defects." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, 373–82. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_41.

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Conference papers on the topic "Interfacial defect"

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Hetzer, M. J., L. J. Brillson, and D. G. Jensen. "Interfacial alloying and defect formation inside operational cigs solar cells." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411453.

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Kacha, K., F. Djeffal, T. Bentrcia, and M. Meguellati. "Equivalent circuit modeling of SiGe/Si solar cell including interfacial defect effects." In 14th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA2013). IEEE, 2013. http://dx.doi.org/10.1109/sta.2013.6783124.

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Srisonphan, Siwapon. "Interfacial oxide defect mediated ballistic electron transport for ITO/p-Si contact." In 2014 11th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2014. http://dx.doi.org/10.1109/ecticon.2014.6839734.

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Harris, J. T., A. E. Segall, D. Robinson, and R. Carter. "Defect Evolution on Coated Samples Under Severe Thermal Transients and Interfacial Characterization." In ASME 2012 Pressure Vessels and Piping Conference. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/pvp2012-78358.

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The effects of severe thermal- and pressure-transients on coated substrates with indentation-induced, blister defects were analyzed using experimental and finite-element methods. Both explicit and implicit FEA approaches were used to assess the transient thermal- and stress-states and the propensity for fracture related damage and evolution, while undergoing uniform convective heating and pressure transients across the surface. Spherical indentations along with in-situ acoustic emissions, c-scans, and finite element modeling were utilized to induce the defects, as well as quantify interfacial adhesion and cohesive zone properties. Preliminary results indicated complex interactions between the boundary conditions and their timing and the resulting propensity for damage birth and evolution. Given the need for robust coatings, the experimental and modeling procedures explored by this study will have important ramifications for coated tube designs and the evaluation of candidate materials.
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Sheng, Chi, Dawei Gong, Xin Wei, Fang Lu, Qinhua Wang, Henghui Sun, and Xun Wang. "Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.pb-1-2.

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Junqueira, Bernardo, DANIEL CASTELLO, and Ricardo Leiderman. "A Deep learning approach for interfacial defect identification based on reduced acoustic scattering models." In XIX International Symposium on Dynamic Problems of Mechanics. ABCM, 2023. http://dx.doi.org/10.26678/abcm.diname2023.din2023-0043.

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Ahmed, Waleed K. "SIF Prediction of Nanocomposite With Interfacial Debonding." In ASME 2014 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/imece2014-36399.

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Local debonding in nanofiber/matrix interface of a nanofiber reinforced composite has been considered as one of the most important factors that can significantly reduce the composite stiffness as well as increases the interfacial stresses levels which eventually causes composite failure. In the present study, the debonded zone is considered as an interfacial defect and modeled to be a circumferential crack. Linear Elastic Fracture Mechanic (LEFM) was used to investigate the impact of a nanofiber/matrix debonded interface in a nanocomposite through estimating Stress Intensity Factor (SIF). Finite element analysis (FEA) has been carried out to investigate SIF along the debonded edge using 3D-axisymmetric method, and this was done through modeling half of the representative volume element (RVE). A representative volume element of the nanocomposite was modeled and analyzed to explore SIF. Mainly, RVE consists of a nanofiber confined by a matrix and subjected to uniaxial tensile stress. A longitudinal debonding is proposed along the interfacial nanofiber/matrix. It has been shown that FE results indicates a significant impact of the debonding on the SIF of the nanocomposite.
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Yamashita, Daiji, Kentaroh Watanabe, Masahisa Fujino, Takuya Hoshii, Yoshitaka Okada, Yoshiaki Nakano, Tadatomo Suga, and Masakazu Sugiyama. "Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7750051.

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Gualdrón-Reyes, Andres F., Camilo A. Mesa, Sixto Giménez, and Iván Mora Seró. "Defect- and interfacial-engineering strategies to synthesize CsPbX3 perovskite nanocrystals for efficient photo(electro)catalysis." In International Conference on Hybrid and Organic Photovoltaics. València: Fundació Scito, 2022. http://dx.doi.org/10.29363/nanoge.hopv.2022.094.

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Huang, Zhen, Zheng Wang, Huijie Li, Fanghui Yin, Liming Wang, and Xiangyang Peng. "Interfacial Defect Detection of Three-Layer Structure in Composite Cross-Arms Using Active Infrared Thermography." In 2023 IEEE 7th Conference on Energy Internet and Energy System Integration (EI2). IEEE, 2023. http://dx.doi.org/10.1109/ei259745.2023.10513190.

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Reports on the topic "Interfacial defect"

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Lee, Wall, and Burch. L52333 NDE and Inspection Techniques Applied to Composite Wrap Repairs. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), June 2012. http://dx.doi.org/10.55274/r0010468.

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The objective includes: Assess commercially available inspection methods to validate integrity of composite repair systems. Identify applicability to inspect composite overwrap and parent metal for both onshore and sub-sea pipelines (where information is available). Identify sources of data to include other users of composite materials(aerospace/aircraft, naval/ship repairs). Identify procedures and technologies to assess inspection effectiveness and provide a gap analysis. Interface with other PRCI projects on long-term testing of composite repairs and other joint industry projects on composite repairs to improve our understanding of long term durability of repairs. Identify global experience with composite repairs; not just North America. For general wall loss, radiography or electromagnetic techniques appear to be the best candidates. Standard radiography techniques can detect changes in wall thickness over a large area. Saturated low frequency systems, e.g. SLOFEC are good for a quick rapid scan of the area of interest. Pulsed eddy current, e.g. PEC, is also available for a general survey of the underlying substrate. For pinhole leaks, the electromagnetic techniques do not have sufficient resolution to detect defects of order 20 mm (0.8 in.) diameter and less. Standard radiography techniques can detect pinhole leaks down to diameters of 3 mm (0.12 in.) or less. Tangential radiography techniques are generally good for defect sizing but there are practical limitations with chord length (i.e. beam path through the pipe wall). Ultrasonic techniques could offer a potential solution but is currently limited due to the high attenuation of the composite repair material where through the repair inspection could only detect large diameter defects greater than 25 mm (1 in.) diameter on thin repairs less than 5 mm (0.2 in.). Detecting pin hole defects by applying the ultrasound along the axial direction of the substrate, effectively skipping the ultrasound under the repair, showed more promise. For delamination or debonding of the interface between the composite laminate and the steel substrate, laser shearography and microwave inspection appear to offer the best solution. Currently there is no single inspection technique that can be applied with confidence to the inspection of interfacial delaminations. Further developments are on-going to provide a solution to this challenging inspection problem. Acoustic emission is able to give an overall picture of the damage within the composite under live loads. It can be used as a QA tool to test the integrity of the repair. However, it is difficult to interpret the signals to gain any quantitative information about a particular defect.
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Srolovitz, David J. Interfacial defects morphology and kinetics. Final report. Office of Scientific and Technical Information (OSTI), November 2001. http://dx.doi.org/10.2172/771276.

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Lee, Richard. PR-398-133719-R02 Inspection of Composite Repairs for Pipelines and Piping - Phase 3 Further NDE Trials. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), April 2020. http://dx.doi.org/10.55274/r0011662.

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In the current extension of the work, three additional inspection trials were successfully completed by two NDE vendors, Sonomatic Ltd and Testex, Inc. The Sonomatic inspection team used two advanced ultrasonic techniques, M-skip and Dynamic Response Spectroscopy (DRS). The Testex team used an existing Low Frequency Electromagnetic Technique (LFET) and a recently developed Off-Surface Electromagnetic Technique (OSET). Both electromagnetic tests are complementary. The LFET was designed to scan bare metals as well as through paints and protective coatings. OSET has been specifically developed for inspection of corrosion (and girth weld location) under insulation (CUI). Both M-skip and LFET/ OSET successfully reported the correct axial/ circumferential location and extent of the external pipe wall defects as well as the location of the longitudinal ERW seam welds. The DRS technique, successfully detected the debonded regions that contained interlaminar and interfacial debonding.
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Lee, Mal Soon, Jinhui Tao, Katherine Koh, and Kee Sung Han. The role of defects and solid/liquid interfacial interactions on controlling anisotropic growth of novel two-dimensional materials. Office of Scientific and Technical Information (OSTI), September 2021. http://dx.doi.org/10.2172/1983664.

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