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Journal articles on the topic 'Interaction electron-phonon'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 March 2025

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1

Sichkar, S. M. "Interaction between Electron and Phonon Subsystems in Hafnium Diboride." METALLOFIZIKA I NOVEISHIE TEKHNOLOGII 36, no. 3 (September 5, 2016): 419–29. http://dx.doi.org/10.15407/mfint.36.03.0419.

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2

Enders, P. "Electron–Phonon Interaction as Effective Electron–Electron Interaction." physica status solidi (b) 128, no. 2 (April 1, 1985): 611–18. http://dx.doi.org/10.1002/pssb.2221280227.

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3

Sahu, Sivabrata, and G. C. Rout. "A theoretical model study on interplay between Coulomb potential and lattice energy in graphene-on-substrate." International Journal of Computational Materials Science and Engineering 06, no. 02 (March 29, 2017): 1750011. http://dx.doi.org/10.1142/s2047684117500117.

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The graphene-on-substrates breaks the sub-lattice symmetry leading to the opening of a small gap. The small band gaps can be enhanced by electron–phonon interactions by keeping strongly polarized superstrate on graphene. To describe the band gap opening in graphene, we propose a tight-binding model Hamiltonian taking into account of third-nearest-neighbor electron-hoppings. We introduce repulsive Coulomb interaction at two sub-lattices of graphene. Further, we consider phonon coupling to the electron densities centered at two sub-lattices in the presence of phonon vibration with a single frequency. For high frequency phonons, the present interaction represents the Holstein interaction. Applying Lang–Firsov canonical transformation in the high phonon-frequency limit, we calculate the modified Coulomb interaction and the effective hopping integral which are functions of electron–phonon coupling, phonon-frequency and nearest-neighbor electron-hopping integral. The electron Green’s functions are calculated by Zubarevs technique. The electron occupancies at two sub-lattices for up and down spins are calculated and computed self-consistently. Finally, we calculate the modulated substrate induced gap of graphene-on-substrate, which is computed numerically for [Formula: see text] grid points for electron momentum. We have studied the interplay of Coulomb interaction, electron–phonon interaction in high phonon-frequency limit. The maximum band gap achieved due to the interplay is nearly 67% more than the substrate induced gap. To achieve this condition, one requires low Coulomb energy for low frequency phonon, while one needs high Coulomb interaction and high electron–phonon interaction of a given lattice vibration frequency. For given electron–phonon interaction and phonon-frequency, the modified gap is enhanced throughout the temperature range with increase of Coulomb interaction.

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4

Capone, M., C. Castellani, and M. Grilli. "Electron-Phonon Interaction in Strongly Correlated Systems." Advances in Condensed Matter Physics 2010 (2010): 1–18. http://dx.doi.org/10.1155/2010/920860.

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The Hubbard-Holstein model is a simple model including both electron-phonon interaction and electron-electron correlations. We review a body of theoretical work investigating, the effects of strong correlations on the electron-phonon interaction. We focus on the regime, relevant to high-Tcsuperconductors, in which the electron correlations are dominant. We find that electron-phonon interaction can still have important signatures, even if many anomalies appear, and the overall effect is far from conventional. In particular in the paramagnetic phase the effects of phonons are much reduced in the low-energy properties, while the high-energy physics can still be affected by phonons. Moreover, the electron-phonon interaction can give rise to important effects, like phase separation and charge-ordering, and it assumes a predominance of forward scattering even if the bare interaction is assumed to be local (momentum independent). Antiferromagnetic correlations reduce the screening effects due to electron-electron interactions and revive the electron-phonon effects.

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5

Provasi, D., N. Breda, R. A. Broglia, G. Colò, H. E. Roman, and G. Onida. "Electron-phonon interaction inC70." Physical Review B 61, no. 11 (March 15, 2000): 7775–80. http://dx.doi.org/10.1103/physrevb.61.7775.

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6

Weber, W., and L. F. Mattheiss. "Electron-phonon interaction inBa2YCu3O7." Physical Review B 37, no. 1 (January 1, 1988): 599–602. http://dx.doi.org/10.1103/physrevb.37.599.

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7

ZOU, ANYUN, and HONGJING XIE. "EFFECTS OF CONFINED LO AND SO PHONON MODES ON POLARON IN FREESTANDING CYLINDRICAL QUANTUM WIRE WITH PARABOLIC CONFINEMENT." Modern Physics Letters B 23, no. 29 (November 20, 2009): 3515–23. http://dx.doi.org/10.1142/s0217984909021570.

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The electron self-energy and correction to the electron effective mass in a freestanding quantum wire with parabolic confining potential was investigated by the perturbation approach. Both the electron-confined longitudinal optical (LO) phonon and surface optical (SO) phonon interactions were considered. Results shows that, for small wire radius, the contributions of electron–LO phonon interaction to the electron self-energy and the correction to the electron effective mass are relatively small in compare with those of the electron–SO phonon interaction.

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8

Maslov A.Yu. and Proshina O.V. "Multiple changes in the electron-phonon interaction in quantum wells with dielectrically different barriers." Semiconductors 56, no. 1 (2022): 75. http://dx.doi.org/10.21883/sc.2022.01.53024.9705.

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The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition. Keywords: quantum well, electron-phonon interaction, polaron, asymmetric barriers.

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9

Mitin, V. V., N. A. Bannov, R. Mickevicius, and G. Paulavicius. "Numerical Simulation of Heat Removal from Low Dimensional Nanostructures." VLSI Design 6, no. 1-4 (January 1, 1998): 201–4. http://dx.doi.org/10.1155/1998/37053.

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The acoustic phonon radiation patterns and acoustic phonon spectra due to electron acoustic phonon interaction in double barrier quantum well have been investigated by solving both the kinetic equations for electrons and phonons. The acoustic phonon radiation patterns have strongly pronounced maximum in the directions close to the perpendicular to the quantum well direction. The radiation pattern anisotropy is explained in terms of possible electron transitions, nonequilibrium electron distribution function, and the Hamiltonian of electron-phonon interactions.

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10

Wang, Qisi, Karin von Arx, Masafumi Horio, Deepak John Mukkattukavil, Julia Küspert, Yasmine Sassa, Thorsten Schmitt, et al. "Charge order lock-in by electron-phonon coupling in La1.675Eu0.2Sr0.125CuO4." Science Advances 7, no. 27 (June 2021): eabg7394. http://dx.doi.org/10.1126/sciadv.abg7394.

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Charge order is universal to all hole-doped cuprates. Yet, the driving interactions remain an unsolved problem. Electron-electron interaction is widely believed to be essential, whereas the role of electron-phonon interaction is unclear. We report an ultrahigh-resolution resonant inelastic x-ray scattering (RIXS) study of the in-plane bond-stretching phonon mode in stripe-ordered cuprate La1.675Eu0.2Sr0.125CuO4. Phonon softening and lifetime shortening are found around the charge ordering wave vector. In addition to these self-energy effects, the electron-phonon coupling is probed by its proportionality to the RIXS cross section. We find an enhancement of the electron-phonon coupling around the charge-stripe ordering wave vector upon cooling into the low-temperature tetragonal structure phase. These results suggest that, in addition to electronic correlations, electron-phonon coupling contributes substantially to the emergence of long-range charge-stripe order in cuprates.

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11

Zhao, G. L., and J. Callaway. "Strong electron-phonon interaction inYBa2Cu3O7." Physical Review B 49, no. 9 (March 1, 1994): 6424–27. http://dx.doi.org/10.1103/physrevb.49.6424.

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12

Niksch, M., B. L�thi, and J. K�bler. "Electron-phonon interaction in LaAg." Zeitschrift f�r Physik B Condensed Matter 68, no. 2-3 (June 1987): 291–98. http://dx.doi.org/10.1007/bf01304242.

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13

Sichkar, S. M., and V. N. Antonov. "Phonon spectrum and electron-phonon interaction in technetium." Low Temperature Physics 31, no. 5 (May 2005): 449–53. http://dx.doi.org/10.1063/1.1925373.

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14

Falkovsky, L. A. "Electron-phonon interaction and coupled phonon-plasmon modes." Journal of Experimental and Theoretical Physics 97, no. 4 (October 2003): 794–805. http://dx.doi.org/10.1134/1.1625070.

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15

MOUSAVI, HAMZE, and HAMED REZANIA. "ELECTRON–PHONON INTERACTION IN CARBON NANOTUBES." Modern Physics Letters B 24, no. 30 (December 10, 2010): 2947–54. http://dx.doi.org/10.1142/s0217984910025255.

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The effect of electron–phonon interaction in (8, 0), (10, 0) and (11, 0) semiconducting single-walled carbon nanotubes on the band gap is investigated using the Holstein model and Green's function technique. By comparing numerical results for density of states without phonon modulation and with electron–phonon interaction, it is shown that the band gap decreases when coupling strength increases.

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16

BELVEDERE, L. V., R. L. P. G. DO AMARAL, and A. F. DE QUEIROZ. "CHARGE-DENSITY-WAVES IN THE PRESENCE OF IMPURITY POTENTIAL IN ONE-DIMENSIONAL SYSTEMS: A FIELD THEORY APPROACH." International Journal of Modern Physics B 18, no. 06 (March 10, 2004): 883–98. http://dx.doi.org/10.1142/s0217979204023994.

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The effective Lagrangian model for charge-density waves interacting with an impurity potential in one-dimensional systems is considered in the dynamical phonon phase approach. Using the fermion–boson mapping we obtain the effective bosonized version of the model. The impurity potential breaks the linked electron–phonon symmetry, the phason field turns out to be in interaction with the electron–phonon condensate and the phonon field develops a non-vanishing vacuum expectation value. The effective fermionized version of the model corresponds to the chiral Gross–Neveu model with quartic self-interaction among a massless and a massive (electron) Fermi fields. The electron–phonon system exhibits a conserved topological charge which is independent of local variations of the phases of the phonon and electron fields. The equation of state of the associated statistical-mechanical system is obtained. For the dynamical phonon phase field the Kosterlitz–Thouless phase transition is suppressed.

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17

Маслов, А. Ю., and О. В. Прошина. "Многократное изменение электрон-фононного взаимодействия в квантовых ямах с диэлектрически различными барьерами." Физика и техника полупроводников 56, no. 1 (2022): 101. http://dx.doi.org/10.21883/ftp.2022.01.51819.9705.

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Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

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18

PHILLIPS, J. C. "ELECTRON–PHONON INTERACTIONS CAUSE HTSC." International Journal of Modern Physics B 15, no. 24n25 (October 10, 2001): 3153–55. http://dx.doi.org/10.1142/s0217979201007312.

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What is the microscopic interaction responsible for high temperature superconductivity (HTSC)? Here data on temporal relaxation of T c and the room temperature conductivity in YBa2Cu3O 6+x after abrupt alteration by light pulses or pressure changes are analyzed. The analysis proves, independently of microscopic details, that only electron–phonon interactions can cause HTSC in the cuprates; all other dynamical interactions are excluded by experiment.

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19

Kamarchuk, G. V., and A. V. Khotkevich. "Point-contact spectroscopy of the electron–phonon interaction in polyvalent nontransition metals: indium and thallium." Soviet Journal of Low Temperature Physics 11, no. 2 (February 1, 1985): 87–91. https://doi.org/10.1063/10.0031248.

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The electron–phonon interaction in indium and thallium is investigated experimentally by the point-contact spectroscopy method. The point-contact functions of the electron–phonon interaction are determined from the measured variations of the second derivatives of the point-contact current–voltage characteristics as a function of the voltage. The results are compared with the Éliashberg electron–phonon interaction functions and the densities of phonon states. The variations of the relative intensity and the positions of the maxima of the point-contact spectra of thallium are interpreted as the onset of a possible anisotropy of the electron–phonon interaction in this metal. Two-phonon electron-scattering processes in thallium point contacts are investigated.

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20

Jin, Jae Sik, and Joon Sik Lee. "Electron–Phonon Interaction Model and Prediction of Thermal Energy Transport in SOI Transistor." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4094–100. http://dx.doi.org/10.1166/jnn.2007.010.

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An electron–phonon interaction model is proposed and applied to thermal transport in semiconductors at micro/nanoscales. The high electron energy induced by the electric field in a transistor is transferred to the phonon system through electron–phonon interaction in the high field region of the transistor. Due to this fact, a hot spot occurs, which is much smaller than the phonon mean free path in the Si-layer. The full phonon dispersion model based on the Boltzmann transport equation (BTE) with the relaxation time approximation is applied for the interactions among different phonon branches and different phonon frequencies. The Joule heating by the electron–phonon scattering is modeled through the intervalley and intravalley processes for silicon by introducing average electron energy. The simulation results are compared with those obtained by the full phonon dispersion model which treats the electron–phonon scattering as a volumetric heat source. The comparison shows that the peak temperature in the hot spot region is considerably higher and more localized than the previous results. The thermal characteristics of each phonon mode are useful to explain the above phenomena. The optical mode phonons of negligible group velocity obtain the highest energy density from electrons, and resides in the hot spot region without any contribution to heat transport, which results in a higher temperature in that region. Since the acoustic phonons with low group velocity show the higher energy density after electron–phonon scattering, they induce more localized heating near the hot spot region. The ballistic features are strongly observed when phonon–phonon scattering rates are lower than 4 × 1010 s−1.

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21

Jin, Jae Sik, and Joon Sik Lee. "Electron–Phonon Interaction Model and Prediction of Thermal Energy Transport in SOI Transistor." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4094–100. http://dx.doi.org/10.1166/jnn.2007.18084.

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An electron–phonon interaction model is proposed and applied to thermal transport in semiconductors at micro/nanoscales. The high electron energy induced by the electric field in a transistor is transferred to the phonon system through electron–phonon interaction in the high field region of the transistor. Due to this fact, a hot spot occurs, which is much smaller than the phonon mean free path in the Si-layer. The full phonon dispersion model based on the Boltzmann transport equation (BTE) with the relaxation time approximation is applied for the interactions among different phonon branches and different phonon frequencies. The Joule heating by the electron–phonon scattering is modeled through the intervalley and intravalley processes for silicon by introducing average electron energy. The simulation results are compared with those obtained by the full phonon dispersion model which treats the electron–phonon scattering as a volumetric heat source. The comparison shows that the peak temperature in the hot spot region is considerably higher and more localized than the previous results. The thermal characteristics of each phonon mode are useful to explain the above phenomena. The optical mode phonons of negligible group velocity obtain the highest energy density from electrons, and resides in the hot spot region without any contribution to heat transport, which results in a higher temperature in that region. Since the acoustic phonons with low group velocity show the higher energy density after electron–phonon scattering, they induce more localized heating near the hot spot region. The ballistic features are strongly observed when phonon–phonon scattering rates are lower than 4 × 1010 s−1.

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22

Sun, J. P., H. B. Teng, G. I. Haddad, M. A. Stroscio, and G. J. Iafrate. "lntersubband Relaxation in Step Quantum Well Structures." VLSI Design 8, no. 1-4 (January 1, 1998): 289–93. http://dx.doi.org/10.1155/1998/17823.

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Intersubband relaxation due to electron interactions with the localized phonon modes plays an important role for population inversion in quantum well laser structures designed for intersubband lasers operating at mid-infrared to submillimeter wavelengths. In this work, intersubband relaxation rates between subbands in step quantum well structures are evaluated numerically using Fermi's golden rule, in which the localized phonon modes including the asymmetric interface modes, symmetric interface modes, and confined phonon modes and the electron – phonon interaction Hamiltonians are derived based on the macroscopic dielectric continuum model, whereas the electron wave functions are obtained by solving the Schrödinger equation for the heterostructures under investigation. The sum rule for the relationship between the form factors of the various localized phonon modes and the bulk phonon modes is examined and verified for these structures. The intersubband relaxation rates due to electron scattering by the asymmetric interface phonons, symmetric interface phonons, and confined phonons are calculated and compared with the relaxation rates calculated using the bulk phonon modes and the Fröhlich interaction Hamiltonian for step quantum well structures with subband separations of 36 meV and 50meV, corresponding to the bulk longitudinal optical phonon energy and interface phonon energy, respectively. Our results show that for preferential electron relaxation in intersubband laser structures, the effects of the localized phonon modes, especially the interface phonon modes, must be included for optimal design of these structures.

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23

Nath, S., and N. K. Ghosh. "Phonon-Mediated Electron–Phonon Interaction in Hubbard–Holstein Model." Journal of Low Temperature Physics 182, no. 1-2 (October 14, 2015): 1–12. http://dx.doi.org/10.1007/s10909-015-1346-2.

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24

Vakarchuk, I. O., V. M. Myhal, and V. M. Tkachuk. "Electron–Phonon Interaction Influence on Electron and Phonon Excitations in Amorphous Metals." physica status solidi (b) 185, no. 1 (September 1, 1994): 101–15. http://dx.doi.org/10.1002/pssb.2221850106.

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25

QIN, G. "EXCITON-LO PHONON INTERACTION IN GaAs QUANTUM DOTS." International Journal of Modern Physics B 19, no. 15n17 (July 10, 2005): 2823–28. http://dx.doi.org/10.1142/s0217979205031766.

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All the previous contributions on electron-LO phonon interaction in quantum dot structures are based on macroscopic isotropic models. The macroscopic dielectric model taking account of the phonon confinement points out that the interaction strength between electron-hole pair and LO phonon (eh-ph) in semiconductor quantum dots is size-independent that is not in accord with some of the experiment data. In this article, after taking account of the effect of transverse charges of ions, microscopic valence force field model based on group theory is used to evaluate the eh-ph and exciton-LO phonon (ex-ph) interactions in GaAs QDs with scales up to 90Å (containing 16863 ions). It turns out that both the interaction strength of eh-ph and ex-ph are not size-independent but size-sensitive.

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26

Antonyak, O. T. "Peculiarities of electron-phonon interaction in Pr3+ centers of SrCl2:Pr single crystals." Functional Materials 20, no. 4 (December 25, 2013): 429–33. http://dx.doi.org/10.15407/fm20.04.429.

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27

Szczȩśniak, R., A. P. Durajski, and A. M. Duda. "Pseudogap in the Eliashberg approach based on electron-phonon and electron-electron-phonon interaction." Annalen der Physik 529, no. 4 (February 27, 2017): 1600254. http://dx.doi.org/10.1002/andp.201600254.

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28

Kulish, Vladimir, Navid Aslfattahi, and Michal Schmirler. "Fractional Model of Electron–Phonon Interaction." Fractal and Fractional 7, no. 5 (May 1, 2023): 379. http://dx.doi.org/10.3390/fractalfract7050379.

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Based on the derivation of the equation of state for systems with a fractional power spectrum, the relationship between the van der Waals constant and the fractional derivative order has been established. The fractional model of electron–phonon interaction has received additional consideration, which may be pertinent when interpreting the experimental results. This model is valuable for describing superconductivity at high temperatures because it predicts relatively large values for the electron–phonon interaction constant.

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29

Kim, D. "The electron-phonon interaction and itinerant electron magnetism." Physics Reports 171, no. 4 (December 1988): 129–229. http://dx.doi.org/10.1016/0370-1573(88)90001-4.

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30

Wu, C. Y., W. B. Jian, and J. J. Lin. "Phonon-induced electron-electron interaction in disordered superconductors." Physical Review B 52, no. 21 (December 1, 1995): 15479–84. http://dx.doi.org/10.1103/physrevb.52.15479.

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31

Chanpoom, Thaipanya, S. Chantrapakajee, and Pongkaew Udomsamuthirun. "The Critical Temperature of Two-Band Superconductors with Pseudogap." Advanced Materials Research 770 (September 2013): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amr.770.132.

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The exact formula of Tc’s equation of two-band s-wave superconductors with Pseudogap in weak-coupling limit are derived by considering the influence of interband interaction. The pairing interaction in each band consisted of 2 parts the electron-phonon interaction and non-electron-phonon interaction are included in our model. It was found that the critical temperature is increased as Pseudogap, phonon coupling of 1st band constant and interband phonon coupling constant increased.

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32

DOLOCAN, ANDREI, VOICU OCTAVIAN DOLOCAN, and VOICU DOLOCAN. "SOME ASPECTS OF THE ELECTRON-BOSON INTERACTION AND OF THE ELECTRON-ELECTRON INTERACTION VIA BOSONS." Modern Physics Letters B 21, no. 01 (January 10, 2007): 25–36. http://dx.doi.org/10.1142/s0217984907012335.

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By using a Hamiltonian of interaction between fermions via bosons1 we derive some properties of the electro-phonon and electron-photon interaction and also of the electron-electron interaction. We have obtained that in a degenerate electron gas there is an attraction between two electrons via acoustical phonons. Also, in certain conditions, there may be an attraction between two electrons via longitudinal optical phonons. Although our expressions for the polaron energy in both cases of the acoustical and longitudinal optical phonons are different from that obtained in the standard theory, their magnitudes are the same with these and they are in good agreement with experimental data. The total emission rate of an electron against a phonon system at absolute zero is directly proportional to the electron momentum. Also, an attraction between two electrons may appear via photons.

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33

Insad, Soukaina, N'goyé Bré Junior Kanga, and Lalla Btissam Drissi. "Two-dimensional stanene: Electron-phonon interaction." Materials Today: Proceedings 53 (2022): 437–40. http://dx.doi.org/10.1016/j.matpr.2022.01.413.

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34

Lemzyakov, S. A., M. A. Tarasov, and V. S. Edelman. "Electron-Phonon Interaction in Aluminum SINIS." IEEE Transactions on Applied Superconductivity 32, no. 4 (June 2022): 1–4. http://dx.doi.org/10.1109/tasc.2021.3139261.

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35

Savchenko, A. M., and M. B. Sadovnikova. "Resonance enhancement of electron-phonon interaction." Moscow University Physics Bulletin 64, no. 1 (February 2009): 89–90. http://dx.doi.org/10.3103/s0027134909010202.

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36

Yu, X. Z., Y. Yang, W. Pan, and W. Z. Shen. "Electron-phonon interaction in disordered semiconductors." Applied Physics Letters 92, no. 9 (March 3, 2008): 092106. http://dx.doi.org/10.1063/1.2890055.

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37

Al-Lehaibi, Abdrabuh, James C. Swihart, William H. Butler, and Frank J. Pinski. "Electron-phonon interaction effects in tantalum." Physical Review B 36, no. 8 (September 15, 1987): 4103–11. http://dx.doi.org/10.1103/physrevb.36.4103.

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38

Spagnolatti, I., M. Bernasconi, and G. Benedek. "Electron-phonon interaction in carbon schwarzites." European Physical Journal B - Condensed Matter 32, no. 2 (March 1, 2003): 181–87. http://dx.doi.org/10.1140/epjb/e2003-00087-5.

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39

Pan, L. K., and Chang Q. Sun. "Coordination imperfection enhanced electron-phonon interaction." Journal of Applied Physics 95, no. 7 (April 2004): 3819–21. http://dx.doi.org/10.1063/1.1646469.

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40

Yeh, Nai‐Chang, James C. Swihart, and Alan L. Rockwood. "Electron‐Phonon Interaction and High Tc." Physics Today 41, no. 3 (March 1988): 11–13. http://dx.doi.org/10.1063/1.2811337.

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41

Wang, Zhong-he, Cun-zhou Zhang, and Guang-yin Zhang. "Electron-Phonon Interaction in Small Systems." Chinese Physics Letters 13, no. 12 (December 1996): 919–22. http://dx.doi.org/10.1088/0256-307x/13/12/012.

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42

Zheng, Ruisheng, and Mitsuru Matsuura. "Electron-phonon interaction in mixed crystals." Physical Review B 59, no. 23 (June 15, 1999): 15422–29. http://dx.doi.org/10.1103/physrevb.59.15422.

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43

Alizadeh, A., A. Rostami, H. Baghban, and H. B. Bahar. "Tailoring electron–phonon interaction in nanostructures." Photonics and Nanostructures - Fundamentals and Applications 12, no. 2 (April 2014): 164–72. http://dx.doi.org/10.1016/j.photonics.2013.11.002.

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44

Cardona, Manuel. "Electron–phonon interaction in tetrahedral semiconductors." Solid State Communications 133, no. 1 (January 2005): 3–18. http://dx.doi.org/10.1016/j.ssc.2004.10.028.

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Sergeev, A., B. S. Karasik, N. G. Ptitsina, G. M. Chulkova, K. S. Il'in, and E. M. Gershenzon. "Electron–phonon interaction in disordered conductors." Physica B: Condensed Matter 263-264 (March 1999): 190–92. http://dx.doi.org/10.1016/s0921-4526(98)01323-4.

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Keller, J., C. E. Leal, and F. Forsthofer. "Electron-phonon interaction in Hubbard systems." Physica B: Condensed Matter 206-207 (February 1995): 739–41. http://dx.doi.org/10.1016/0921-4526(94)00572-d.

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Werheit, Helmut, and Udo Kuhlmann. "Electron-phonon interaction in B12 icosahedra." Solid State Communications 88, no. 6 (November 1993): 421–25. http://dx.doi.org/10.1016/0038-1098(93)90605-m.

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Tsuchiya, T., and T. Ando. "Electron-phonon interaction in semiconductor superlattices." Semiconductor Science and Technology 7, no. 3B (March 1, 1992): B73—B76. http://dx.doi.org/10.1088/0268-1242/7/3b/017.

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Sajfert, Vjekoslav, Ljiljana Mašković, Stevo Jaćimovski, Dušan Popov, and Bratislav Tošić. "Electron–Phonon Interaction in Cylindrical Nanostructures." Journal of Computational and Theoretical Nanoscience 5, no. 7 (July 1, 2008): 1230–39. http://dx.doi.org/10.1166/jctn.2008.2558.

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Wendler, L., and R. Haupt. "Electron-Phonon Interaction in Semiconductor Superlattices." physica status solidi (b) 143, no. 2 (October 1, 1987): 487–510. http://dx.doi.org/10.1002/pssb.2221430211.

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