Academic literature on the topic 'Inter-valley scattering'
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Journal articles on the topic "Inter-valley scattering"
Tikhonenko, F. V., D. W. Horsell, B. Wilkinson, R. V. Gorbachev, and A. K. Savchenko. "The effect of inter-valley scattering on weak localisation in graphene." Physica E: Low-dimensional Systems and Nanostructures 40, no. 5 (March 2008): 1364–66. http://dx.doi.org/10.1016/j.physe.2007.09.010.
Full textJin, Zhao, Liping Qiao, Ce Liu, Chen Guo, Lidong Liu, and Jiang'an Wang. "Inter valley phonon scattering mechanism in strained Si/(101)Si1−xGex." Journal of Semiconductors 34, no. 7 (July 2013): 072002. http://dx.doi.org/10.1088/1674-4926/34/7/072002.
Full textJi, Xuan-Ting, Hai-Zhou Lu, Zhen-Gang Zhu, and Gang Su. "Competition between the inter-valley scattering and the intra-valley scattering on magnetoconductivity induced by screened Coulomb disorder in Weyl semimetals." AIP Advances 7, no. 10 (October 2017): 105003. http://dx.doi.org/10.1063/1.4998395.
Full textSmith, D. C., E. D. O'Sullivan, L. Rota, A. C. Maciel, and J. F. Ryan. "Ultrafast optical response and inter-valley scattering in GaSb/AlSb quantum wells." Physica E: Low-dimensional Systems and Nanostructures 2, no. 1-4 (July 1998): 156–60. http://dx.doi.org/10.1016/s1386-9477(98)00034-4.
Full textZhu, Huaxing, Bin Zhang, Guiwen Wang, Kunling Peng, Yanci Yan, Qing Zhang, Xiaodong Han, Guoyu Wang, Xu Lu, and Xiaoyuan Zhou. "Promoted high temperature carrier mobility and thermoelectric performance of InTe enabled by altering scattering mechanism." Journal of Materials Chemistry A 7, no. 19 (2019): 11690–98. http://dx.doi.org/10.1039/c9ta00475k.
Full textHorsell, D. W., F. V. Tikhonenko, R. V. Gorbachev, and A. K. Savchenko. "Weak localization in monolayer and bilayer graphene." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (November 19, 2007): 245–50. http://dx.doi.org/10.1098/rsta.2007.2159.
Full textHuang, Shi-Hao, Qi-Qiang Zheng, Wen-Ming Xie, Jin-Yang Lin, Wei Huang, Cheng Li, and Dong-Feng Qi. "Enhanced indirect-to-direct inter-valley scattering in germanium under tensile strain for improving the population of electrons in direct valley." Journal of Physics: Condensed Matter 30, no. 46 (October 23, 2018): 465701. http://dx.doi.org/10.1088/1361-648x/aae50e.
Full textFeng, Lanting, Tiancheng Ma, and Yisong Zheng. "Magneto-conductivity of Weyl semimetals: the roles of inter-valley scattering and high-order Feynman diagrams." Journal of Physics: Condensed Matter 32, no. 20 (February 18, 2020): 205502. http://dx.doi.org/10.1088/1361-648x/ab680a.
Full textBenjamin, Colin, and A. M. Jayannavar. "Persistent currents in absence of magnetic field in graphene nanorings: The ambiguous role of inter valley scattering." Applied Physics Letters 104, no. 5 (February 3, 2014): 053112. http://dx.doi.org/10.1063/1.4864615.
Full textVancsó, Péter, Alexandre Mayer, Péter Nemes-Incze, and Géza István Márk. "Wave Packet Dynamical Simulation of Quasiparticle Interferences in 2D Materials." Applied Sciences 11, no. 11 (May 21, 2021): 4730. http://dx.doi.org/10.3390/app11114730.
Full textDissertations / Theses on the topic "Inter-valley scattering"
Куліков, Костянтин Вячеславович. "Метод моделювання імпульсних та частотних характеристик ІІІ-нітридів." Thesis, КПІ ім. Ігоря Сікорського, 2021. https://ela.kpi.ua/handle/123456789/40645.
Full textThe dissertation work proposed a method for modeling and interpreting the high-frequency characteristics of multi-valley semiconductors, in particular, GaN, AlN, and InN. The model is practiced to state-of-the-art, encouraging, and relevant materials GaN, AlN, and InN, which are now recognized under the generic name III-nitrides. The method is noticed by the economical use of computational resources without meaningful loss of accuracy and the feasibility of using both for dynamic tasks over time and variables in the scope of fields. The introduced approach is based on solving a system of differential equating, which are known as relaxation equations and are obtained from the Boltzmann kinetic equating in the relaxation time approximation by averaging over k-space. In English literature, this method is known as the "method of momentum." Indifference to the traditional system of equations for the concentration of carriers, their momentum, and energy, here, alternately of the energy relaxation equation, the equation for electron temperature is done as a measure of the energy of only chaotic movement. The second meaningful difference is that the relaxation times are not defined as integral values from the static properties of the material, but for averaging the quantum-mechanical scattering rates usually used in the Monte Carlo meth-od for particular types of scattering. The averaging was made over the Maxwell distribution function in the electron temperature approximation, as an outcome of which numerous mechanisms of carrier scattering through their explicit relaxation times are taken into account. Since the system of equations applied includes equations in partial derivatives concerning time and coordinates, it performs it possible to examine the characteristic demonstrations of the impulse properties of the mate-rials under consideration, particularly, the time effect of the “overshoot” of drift velocity and the spatial “ballistic transport” of carriers. For the first time, the use of the Fourier transform of the impulse dependence of the carrier drifts velocity to calculate the highest frequencies inherent in a semiconductor is recognized. A relationship was found between the contour of the spectral characteristic of the drift velocity and the scattering mechanisms that predominate in a given electric field. The characteristics of III-nitrides in the frequency region in a strong electric field are investigated and correlated with existing methods for predicting cut-off frequencies. It is determined that the limiting frequencies increase with increasing electric field strength and result in hundreds of gigahertz, and for aluminum nitride, it passes one thousand gigahertz. This is due, obviously, to the greatest for him inter-valley distances and, therefore, with a decreased intervalley scattering. The study of the spatial manifestation of the splash effect gives the possibility of an approximately collisionless, ballistic flight of electrons in a strong field at ranges up to hundredths and tenths of a micrometer.
Chen, Wei-ming, and 陳韋名. "Effect of Inter-valley Scattering on Electrons Transport Across Heterostructures." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/34816339916058252415.
Full text國立成功大學
物理學系碩博士班
95
In semiconductors, electrons have different effective mass in different energy bands. Thus, in this thesis, we use the concept of reciprocal effective mass tensor to study the transiting behavior of electrons in semiconductors. First, we apply this concept to problems of quantum tunneling in one dimension, and studying the probability of electrons with different energies in the same valley (Γ valley) through semiconductors. Next step, we extend 1-D problems to scattering problems between two valleys (Γ valley and Χ valley). And we use the concept of mixing to combine the two valleys which have no relation originally. At the same time, we also calculate the transmission coefficients of electrons with different energies in different valleys through semiconductors. And we change the intensity of mixing to analyze the relation between the intensity and transmission coefficients. Finally, we give an additional bias on semiconductors to make the band diagrams deformed. This bias will cause current occurred when electrons emit through semiconductors. In this process, we can discuss the relation between intensity of current density and bias, and that between intensity of current density and intensity of mixing. Thus we will find some interesting phenomena, such as negative differential resistance (NDR) and etc.
Conference papers on the topic "Inter-valley scattering"
Esmaielpour, Hamidreza, David K. Ferry, Tetsuya B. Mishima, Michael B. Santos, Vincent R. Whiteside, and Ian R. Sellers. "Hot Carrier Solar Cells based on Inter-Valley Phonon Scattering: A New Approach towards a Practical Solution." In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8980655.
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