Relevant bibliographies by topics / Integrated pressure transducer

Academic literature on the topic 'Integrated pressure transducer'

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Published: 30 May 2022
Last updated: 31 May 2022

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Journal articles on the topic "Integrated pressure transducer"

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Maralani, Ayden, Levent Beker, and Albert P. Pisano. "Toward Integrated Pressure Sensors for Temperatures up to 600°C." Journal of Microelectronics and Electronic Packaging 13, no. 4 (October 1, 2016): 163–68. http://dx.doi.org/10.4071/imaps.522.

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The main objective of this study is to develop pressure-sensing systems by integrating pressure transducers with the interface circuitry in one package that can withstand harsh environments, particularly high temperatures up to 600°C. To achieve that, both pressure transducer and interface circuitry are individually required to operate and survive up to 600°C with acceptable degrees of reliability. This article reports performance evaluation of fabricated 4H-SiC Junction Field Effect Transistors along with differential pairs for use in the interface circuitry. The test results are very promising and show stable performances from 25°C up to 600°C. Moreover, design, fabrication, and early test (from 25°C up to 100°C) of an SiC-based circular diaphragm-type pressure transducer are also reported.
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Maralani, Ayden, Levent Beker, and Albert P. Pisano. "Towards Integrated Sensors for Environments with Temperatures up to 600 °C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (January 1, 2016): 000051–55. http://dx.doi.org/10.4071/2016-hitec-51.

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Abstract The main objective is to develop sensing systems by integrating transducers such as pressure sensing elements with the interface circuitry in one package that can withstand harsh environments, particularly high temperatures up to 600 °C. To achieve that, both pressure transducer and interface circuitry are individually required to operate and survive up to 600 °C with acceptable degrees of reliability. This paper reports performance evaluation of fabricated 4H-SiC JFETs along with differential pairs for use in the interface circuitry. The test results are very promising and show stable performances from 25 °C up to 600 °C. Moreover, design, fabrication, and early test of a SiC based circular diaphragm type pressure transducer is also reported.
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Wang, Wenjie, Weihao Shi, Peter Thomas, and Mingsui Yang. "Design and Analysis of Two Piezoelectric Cymbal Transducers with Metal Ring and Add Mass." Sensors 19, no. 1 (January 2, 2019): 137. http://dx.doi.org/10.3390/s19010137.

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Based on traditional sandwich structure, two piezoelectric transducers were designed to meet the strict underwater application backgrounds such as high pressure, corrosion resistance, and high strength. Both transducers integrated most of previous researches while one transducer has a multilayer cavity structure which is different from the other structure and previous transducer structures. After a detailed simulation analysis of every structural parameter, key parameters were pointed out to have an obvious influence on its performance. Then, two models were constructed and compared with chosen sets of geometry parameters and manufacturing process, which can also provide a reference for low-frequency transducer design. The simulation results and experimental results of our transducers show a good consistency which indicates the cavity structure can reduce the resonance frequency.
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Yalikun, Yaxiaer, and Yo Tanaka. "Ultra-thin glass sheet integrated transparent diaphragm pressure transducer." Sensors and Actuators A: Physical 263 (August 2017): 102–12. http://dx.doi.org/10.1016/j.sna.2017.05.047.

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Temirov, N. E., and N. N. Temirov. "Experience in clinical use of active ultrasonic handpiece with integrated pressure transducer." Modern technologies in ophtalmology, no. 5 (October 20, 2021): 99–101. http://dx.doi.org/10.25276/2312-4911-2021-5-99-101.

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Purpose: Clinical testing of new ultrasonic handpiece with active transducer of pressure Active Sentry (AS), optional for phacomachine Cebturion. The study is based on the analysis of surgical records and disease histories of 100 patients operated on age-related cataract, by the method of ultrasonic phacoemulsification. All surgeries were performed by one surgeon by using the phacomachine Cebturion with settings ensuring safety and efficacy of the procedure. The half of all procedures were performed using the conventional ultrasonic handpiece (OZ), and the other half – using the handpiece with active transducer of pressure (AS). The evaluation criteria used include the following: pressure level of irrigating fluid used for nucleofragmentation; nucleofragmentation time; percentage loss of the posterior corneal epithelium cells. Results. With equal safety of the procedure, using the ultrasonic handpiece with active transducer of pressure (AS) in the course of nucleofragmentation enables the reduction of irrigating fluid pressure (BSS) by 20 mm Hg, followed by the reduction of BBS volume passing through the anterior chamber by 30 ml upon the average. The rate of the intraoperative endothelial cells loss when using the ultrasonic active handpiece is also lower, as compared to the conventional one, 8.3±3.2 vs 10.2±2.1, respectively. However this difference could not be confirmed by statistical data, possibly due to the limited sample of patients. Conclusions. The introduction of a new active ultrasonic handpiece (AS) for phacomachine Cebturion allows further reduction of procedural injury, while maintaining high efficiency of nucleofragmentation. Key words: рhacoemulsification of cataract, ultrasonic handle, active transducer of ocular pressure, reducing of surgical injury.
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Kumar, Shashi, Gaddiella Diengdoh Ropmay, Pradeep Kumar Rathore, Peesapati Rangababu, and Jamil Akhtar. "Fabrication and testing of PMOS current mirror-integrated MEMS pressure transducer." Sensor Review 40, no. 2 (November 23, 2019): 141–51. http://dx.doi.org/10.1108/sr-07-2019-0182.

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Purpose This paper aims to describe the fabrication, packaging and testing of a resistive loaded p-channel metal-oxide-semiconductor field-effect transistor-based (MOSFET-based) current mirror-integrated pressure transducer. Design/methodology/approach Using the concept of piezoresistive effect in a MOSFET, three identical p-channel MOSFETs connected in current mirror configuration have been designed and fabricated using the standard polysilicon gate process and microelectromechanical system (MEMS) techniques for pressure sensing application. The channel length and width of the p-channel MOSFETs are 100 µm and 500 µm, respectively. The MOSFET M1 of the current mirror is the reference transistor that acts as the constant current source. MOSFETs M2 and M3 are the pressure-sensing transistors embedded on the diaphragm near the mid of fixed edge and at the center of the square diaphragm, respectively, to experience both the tensile and compressive stress developed due to externally applied input pressure. A flexible square diaphragm having a length of approximately 1,000 µm and thickness of 50 µm has been realized using deep-reactive ion etching of silicon on the backside of the wafer. Then, the fabricated sensor chip has been diced and mounted on a TO8 header for the testing with pressure. Findings The experimental result of the pressure sensor chip shows a sensitivity of approximately 0.2162 mV/psi (31.35 mV/MPa) for an input pressure of 0-100 psi. The output response shows a good linearity and very low-pressure hysteresis. In addition, the pressure-sensing structure has been simulated using the parameters of the fabricated pressure sensor and from the simulation result a pressure sensitivity of approximately 0.2283 mV/psi (33.11 mV/MPa) has been observed for input pressure ranging from 0 to 100 psi with a step size of 10 psi. The simulated and experimentally tested pressure sensitivities of the pressure sensor are in close agreement with each other. Originality/value This current mirror readout circuit-based MEMS pressure sensor is new and fully compatible to standard CMOS processes and has a promising application in the development CMOS-MEMS-integrated smart sensors.
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Mikhailenko, I. V., A. T. Orlov, and B. K. Serdega. "Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer." Semiconductors 51, no. 4 (April 2017): 498–502. http://dx.doi.org/10.1134/s1063782617040145.

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Ledesma, Eyglis, Iván Zamora, Francesc Torres, Arantxa Uranga, Vassil Tzanov, Nuria Barniol, Eloi Marigó, and Mohan Soundara-Pandian. "Squared PMUT with Enhanced Pressure Sensitivities." Proceedings 2, no. 13 (November 27, 2018): 925. http://dx.doi.org/10.3390/proceedings2130925.

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This study presents a squared AlN piezoelectric micromachined ultrasonic transducer (PMUT). Using this PMUT greater level of output pressure and higher reception sensitivity has been achieved, compared with the state-of-the-art. Another outstanding characteristic for this PMUT is that it can be monolithically integrated on CMOS substrate, being remarkably advantageous in relation to the bonding method implemented until now.
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Hu, C. M., N. Guo, H. Du, and L. M. Xu. "Dynamic characteristics of stacked piezoelectric transducers of ultrasonic wire bonders used in integrated circuit packaging." Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science 217, no. 3 (March 1, 2003): 341–52. http://dx.doi.org/10.1243/095440603762870009.

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Currently ultrasonic wire bonders with precision capillary tips are widely used for bonding wires to integrated circuit (IC) chips and circuits. However, the quality and strength of a bond may be affected significantly by the change of vibration during the bonding process. It is therefore important to understand the dynamics of the bonding process as well as the vibration characteristics of the bonding system, so bonding quality may be monitored. This paper reports the study on the dynamic characteristics of the stacked piezoelectric transducers used in the ultrasonic wire bonding system. The vibration characteristics are first analysed using the finite element method with resonant frequency and vibration modes. The predicted impedance response is compared with the measurement using a high-pressure (HP) impedance analyser. The displacement profile along the transducer assembly, which includes a piezoelectric stack, clamping and horn sections, are also analysed. The effects of multilayer and polarization on the response of the transducer are discussed. It was found there is good agreement between the prediction and measurement, and bending and extension modes may be excited differently according to the polarization configuration used in the multilayer stack.
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Chen, Rui, Zhongkui Chen, Charles Wang Wai Ng, and Jian Liu. "Development of a pore gas pressure transducer used in unsaturated soils at high water content." E3S Web of Conferences 92 (2019): 02003. http://dx.doi.org/10.1051/e3sconf/20199202003.

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Pore gas pressure in soil is an important parameter in many geoscience applications such as evaluating the effects of trapped pore gas pressure on water infiltration through soil mass, optimizing the design of gas extraction wells in landfills and assessing the performance of landfill covers in reducing landfill gas emission. In addition, it has been observed that pore gas pressure affects slope stability in unsaturated soils. However, the pore gas pressure build-up induced by water infiltration is generally ignored in most slope stability analysis by assuming gas pressure to be zero. Therefore, pore gas pressure measurement in soils is crucial to better understand the unsaturated soil behaviour. However, most of current measuring techniques of pore gas pressure are affected by water interruption during the measurement in unsaturated soils, especially at high water content. In this study, a novel gas pressure transducer was developed to measure the pore gas pressure in unsaturated soil within a wide range of water content. The newly developed pore gas pressure transducer mainly consists of an electrical pressure sensor package and an integrated membrane filter which can prevent water leaching through the membrane but allow gas to pass it freely. The performance of the gas pressure transducer was evaluated by a series of permeation tests. The results show that the developed gas pressure transducer has a good repeatability to monitor gas pressure and has a relatively fast response to the gas pressure change in compacted soils. This transducer is able to measure pore gas pressure range of 0~50 kPa of soils within a relatively high range of soil water content.
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Dissertations / Theses on the topic "Integrated pressure transducer"

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Vincent, David Robert. "Integrated design for an optically driven micromachined silicon pressure transducer." Thesis, University of Southampton, 1993. https://eprints.soton.ac.uk/394151/.

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Михайленко, Ігор Всеволодович. "Напівпровідникові перетворювачі механічних величин з використанням поперечних тензоефектів." Thesis, КПІ ім. Ігоря Сікорського, 2019. https://ela.kpi.ua/handle/123456789/30025.

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Дисертація присвячена розробленню фізико-технологічних засад створення та дослідженню перетворювачів механічних величин на основі поперечних ефектів в анізотропних напівпровідниках. Розроблені фізичні основи побудови перетворювачів механічних величин з використанням поперечних ефектів і проведено їх дослідження на експериментальних зразках. Продемонстрована перспективність використання перетворювачів на основі ефекту тензо-е.р.с. як в дискретному, так і в інтегральному виконанні для створення датчиків сили і тиску, які працюють в діапазоні температур 233-373 K. Виявлений ряд концентраційних ефектів у германії і запропоновані перетворювачі оригінальних конструкцій, таких як диференціальний тензотранзистор, безконтактний лінійний датчик переміщень на основі магнітоконцентраційного ефекту, порогові датчики кута повороту і сили на основі осцилісторного ефекту з можливістю управління порогом переключення. Дослідження, що проведені, підтверджують перспективність практичного використання поперечних ефектів у багатодолинних напівпровідниках для створення перетворювачів механічних величин.
The purpose of the work is to develop a physical basis for transducers of mechanical values design and technology using transverse tenso-effects. The object of the research - characteristics of transverse effects caused by induced anisotropy in Si and Ge. The subject of research are transducers of mechanical values based on the transverse tenso-effects in Si and Ge. The result of the research is the development of both MEMS integrated pressure transducers and the industrial device for measuring the pressure of liquid media. The introduction substantiates the relevance of the topic, shows the relationship with scientific programs and plans, formulates purpose and objectives of scientific research, outlines the novelty and practical significance of the results obtained, indicates the personal contribution of the applicant, provides data on the validation of the results The First chapter analyzes phenomena leading to transverse effects. Consideration given in terms of anisotropy of conductivity, which is interpreted as the non-collinearity of the vectors of electric field and current. It allows using similar formal apparatus in the analysis of various effects. In particular, the cases of anisotropy induced by deformation and magnetic field have been examined. The Second chapter is devoted to the study of discrete tenso-emf transducers. In the proposed tenso-emf transducers, problems of matching the temperature dependencies of the sensitivity and impedances of individual strain gages are virtually eliminated. The dynamic range of the non-fixed tenso-emf transducer was about 120 dB. The Third chapter contains the results of the design and study of transducers using concentration effects in Ge in combination with other physical effects. New types of mechanical transducers proposed, such as differential tenso-transistor, non-contact linear displacement sensor, threshold angle sensors, and oscillistor-effect based force sensor. The Fourth chapter is devoted to the development of an integrated pressure transducer using MEMS technology. Problems of the physical principle of sensing element operation, optimization of the elastic element topology and design of the converter as a whole, as well as a choice of optimal manufacturing technology processes, are solved here. The sensitivity of the integrated transducer with a membrane thickness of 100 μm was 0.02 1/MPa at a nominal conversion range of 1 MPa and a 100% strength margin. Tests of the manufactured series of MEMS integrated transducer showed that the additive component of the error and its change in the range 233-373 K are, respectively, 1% and 1% ... 2% of the nominal signal, which is at least an order of magnitude smaller than the corresponding parameters of a strain gauge Wheatstone bridge. The Fifth chapter describes the design and test results of devices developed on the basis of tenso-emf transducers research. Such devices, introduced for industrial use, are remote manometer transducers PDM-2 and PDMT-1. These devices are designed to measure oil and bitumen wells pressure in the range 0 ... 2.5 MPa, with a nominal output signal of 100 mV. In addition, PDMT-1 transmits information about temperature. The PDM-2 device has passed the State Testing and was recommended for serial production. The conducted studies confirm the high potential of the practical application of transverse effects in multi-valley semiconductors for the development of mechanical values sensors.
Диссертация посвящена разработке физико-технологических принципов создания и исследованию преобразователей механических величин на основе поперечных эффектов в анизотропних полупроводниках. Разработаны физические основы построения преобразователей механических величин с использованием поперечных эффектов и проведено их исследование на экспериментальных образцах. Продемонстрирована перспективность использования преобразователей на основе эффекта тензо-э.д.с. как в дискретном, так и в интегральном исполнении для создания датчиков силы и давления, работающих в диапазоне температур 233-373K. Обнаружен ряд концентрационных эффектов в германии и предложены преобразователи оригинальных конструкций, таких как дифференциальный тензотранзистор, бесконтактный линейный датчик перемещений на основе магнитоконцентрационного эффекта, пороговые датчики угла поворота и силы на основе осциллисторного эффекта с возможностью управления порогом переключения. Проведенные исследования подтверждают перспективность практического использования поперечных эффектов в многодолинных полупроводниках для создания преобразователей механических величин.
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Михайленко, Ігор Всеволодович. "Напівпровідникові перетворювачі механічних величин з використанням поперечних тензоефектів." Doctoral thesis, Київ, 2019. https://ela.kpi.ua/handle/123456789/30024.

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Дисертація присвячена розробленню фізико-технологічних засад створення та дослідженню перетворювачів механічних величин на основі поперечних ефектів в анізотропних напівпровідниках. Розроблені фізичні основи побудови перетворювачів механічних величин з використанням поперечних ефектів і проведено їх дослідження на експериментальних зразках. Продемонстрована перспективність використання перетворювачів на основі ефекту тензо-е.р.с. як в дискретному, так і в інтегральному виконанні для створення датчиків сили і тиску, які працюють в діапазоні температур 233-373 K. Виявлений ряд концентраційних ефектів у германії і запропоновані перетворювачі оригінальних конструкцій, таких як диференціальний тензотранзистор, безконтактний лінійний датчик переміщень на основі магнітоконцентраційного ефекту, порогові датчики кута повороту і сили на основі осцилісторного ефекту з можливістю управління порогом переключення. Дослідження, що проведені, підтверджують перспективність практичного використання поперечних ефектів у багатодолинних напівпровідниках для створення перетворювачів механічних величин.
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Coraucci, Guilherme de Oliveira. "Sensor de pressão microeletronico baseado no efeito piezoresistivo transversal em silicio." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259037.

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Orientador: Fabiano Fruett
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
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Resumo: Apresentamos neste trabalho um sensor de pressão piezorresistivo de multiterminais totalmente compatível com o processo de fabricação CMOS, constituído de um piezoelemento sensível ao estresse mecânico disposto sobre uma membrana microfabricada. O layout deste piezoelemento permite maximizar o efeito do estresse mecânico sobre a deflexão das equipotenciais distribuídas sobre sua região ativa. Utilizamos a análise baseada no Método de Elementos Finitos no projeto da membrana, bem como na definição da disposição dos piezoelementos sobre a mesma. O sensor foi fabricado em duas tecnologias diferentes: CMOS 0,3 ?m MAS (Austria Mikro Systeme International) - disponibilizado pelo Projeto Multi-Usuário PMU-FAPESP - e CCS/Unicamp (Centro de Componentes Semicondutores da Unicamp). Realizamos a membrana, no sensor fabricado na tecnologia AMS, através de um processo de desbaste mecânico da pastilha de silício. Já para o sensor fabricado na tecnologia do CCS/Unicamp, utilizamos um aparato de corrosão química (solução de KOH) para corrosão anisotrópica do silício monocristalino e, desta forma, obtivemos uma membrana com maior qualidade. Realizamos o estudo, analítico e numérico, da dependência da tensão de saída do piezoelemento de multiterminais com relação ao estresse mecânico. Os sensores fabricados apresentaram sensibilidade proporcional ao número de contatoscorrente de entrada e pouca dependência desta sensibilidade com sua geometria para uma grande faixa de variação de suas dimensões. Na tecnologia AMS, o sensor apresentou uma sensibilidade de 0,24 mV/psi e na tecnologia CCS/Unicamp 4,8 mV/psi com linearidade máxima de aproximadamente 5,6% FSO
Abstract: This work describes a CMOS-Compatible multiterminal piezoresistive pressure sensor based on the transversal piezoresistive effect, which consists of a piezotransducer fabricated on a membrane. The layout of this piezoelement is designed in such a way that its sensitivity is improved by maximizing the effect of the mechanical stress over the equipotential lines distribution in its active region. We performed Element Finite analyses in both membrane and piezoelement designs. The sensor was fabricated using two different technologies: CMOS 0,35 ?m AMS process (Austria Mikro Systeme International) - supported by the Fapesp Multi-User Project - and CCS/Unicamp process (Center for Semiconductor Components). In the AMS process, we realized a diaphragm by reducing the thickness of the die through a mechanical polishing process. In the sensor fabricated at CCS/Unicamp process, a backside bulk micro-machining was performed by using an automated KOH chemical etching apparatus, which provides a well-controlled anisotropic etching process. The sensor sensitivity is proportional to the number of input current terminals. The sensor sensitivity dependence related to its geometry is minimized even for a wide range of the sensor layout's aspect-ratio. In the AMS process, sensor's sensitivity amounted to 0.24 mV/psi and in the CCS/Unicamp process the sensitivity amounted to 4,8 mV/psi with a maximum linearity of about 5,6% FSO
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
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Camolesi, Alessandro. "Sensor de pressão microeletromecânico com fonte de referência em tensão." [s.n.], 2010. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259034.

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Orientador: Fabiano Fruett
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação
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Resumo: Apresentamos neste trabalho a fabricação e a caracterização de um sensor de pressão totalmente compatível com a tecnologia CMOS. Este sensor é constituído por quatro piezoresistores, implantados e dispostos em ponte de Wheatstone. Os processos de fabricação do sensor foram todos realizados no Centro de Componentes e Semicondutores (CCS) - Unicamp. A membrana do sensor foi obtida através de um processo de desbaste mecânico do die que foi colado em uma placa de alumina. O alinhamento da colagem foi baseado em um orifício central. O sensor encapsulado apresentou sensibilidade de 0.32mV/psi. Além disso, projetamos uma fonte de referência em tensão do tipo Bandgap. Nesta fonte de referência usamos uma técnica para minimizar os gradientes de estresse mecânico, a maior fonte de não-idealidade desta fonte de referência e permitiu estudarmos a deriva térmica da sensibilidade da ponte
Abstract: We presented in this work the fabrication and the characterization of a pressure sensor totally CMOS compatible. This sensor is arranged by four p-type silicon piezoresistive implanted in a Wheatstone bridge. The fabrication processes were all performed at the Center for Components and Semiconductors (CCS) - Unicamp. The membrane was obtained by a mechanical polishing process of the die that was attached by RTV (Room Temperature Vulcanization) on an alumina substrate. The attach alignment was based on the center of the vent hole. The packaged sensor showed a sensitivity amounts to 0.32mV/psi. Also, a Bandgap voltage reference was designed. In such voltage reference uses a technical to minimize gradients such as mechanical stress, the main non-ideality source to such voltage reference and it allowed the drift thermal analysis of the bridge sensitivity
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
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Book chapters on the topic "Integrated pressure transducer"

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Koshevoy, N. D., O. V. Zabolotnyi, I. I. Koshevaya, V. V. Muratov, and T. G. Rozhnova. "Fiber-Optic Pressure Instrument Transducers." In Integrated Computer Technologies in Mechanical Engineering, 11–23. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37618-5_2.

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Chen, Xi, and Amit Lal. "Micromachined Ultrasonic Ophthalmic Microsurgical Tool with Integrated Pressure Sensor." In Transducers ’01 Eurosensors XV, 424–27. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_101.

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Ullerich, S., W. Mokwa, G. vom Bögel, and U. Schnakenberg. "A Foldable Artificial Lens with an Integrated Transponder System for Measuring Intraocular Pressure." In Transducers ’01 Eurosensors XV, 1196–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_283.

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Kasten, Klaus, Norbert Kordas, Holger Kappert, and Wilfried Mokwa. "High temperature pressure sensor with monolithically integrated CMOS readout circuit based on SIMOX technology." In Transducers ’01 Eurosensors XV, 510–13. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_121.

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Conference papers on the topic "Integrated pressure transducer"

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Menini, P., G. Blasquez, P. Pons, C. Douziech, P. Favaro, and P. Dondon. "Optimization of a BiCMOS integrated transducer for self-compensated capacitive pressure sensor." In ICECS'99. Proceedings of ICECS'99. 6th IEEE International Conference on Electronics, Circuits and Systems. IEEE, 1999. http://dx.doi.org/10.1109/icecs.1999.813416.

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Tutwiler, R. L., J. P. Stitt, K. K. Shung, Q. Wu, T. A. Ritter, X. Yang, and J. Sabarad. "Control Architecture for 30MHz Linear Imaging Array." In ASME 2003 Pressure Vessels and Piping Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/pvp2003-1864.

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The purpose of this system is to have the capability to characterize the performance of very high frequency transducers and arrays. The analog front end is computer controlled by a set of de-multiplexers and multiplexers. The output of the multiplexer network is connected to a TGC array, which is interfaced to a high-speed data acquisition system. A software GUI (Graphical User Interface) has been designed to accomplish this task [1]. A programmable digital I/O interface allows collection of RF channel data and has the capability to be interfaced to a very high frequency analog beam-former under construction. The system front-end electronics (pulsers, receivers, T/R switches, multiplexers, and demultiplexers) have been characterized [2, 3]. The digital I/O signal interface has been integrated and tested. The hardware front end has been integrated to the array interface distribution panel. The individual transducer elements impulse responses have been evaluated and the performance of the array has been tested with a wire test phantom to characterize lateral and axial resolution.
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Solar, H., A. Beriain, A. Jimenez-Irastorza, U. Alvarado, R. Berenguer, M. Ortiz de Landaluce, M. Cojocariu, and C. Martinez. "A CMOS sensor signal conditioner for an automotive pressure sensor based on a piezo-resistive bridge transducer." In 2016 Conference on Design of Circuits and Integrated Systems (DCIS). IEEE, 2016. http://dx.doi.org/10.1109/dcis.2016.7845357.

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Maas, Jürgen, Martin Griese, and Thorben Hoffstadt. "Integrated Sensor Concepts for Dielectric Elastomer Actuators." In ASME 2013 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/smasis2013-3243.

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Actuators based on dielectric electroactive polymers (DEAP) use the electrostatic pressure to convert electric energy into strain energy. Besides this, they are also predestined for sensor applications to monitor the actual stretch state based on the deformation dependent capacitive-resistive behavior of the DEAP. Considering DEAP actuators for positioning applications, like stack- or roll-actuators, the actual position, length or stretch of the actuator is required for a precise control. Thus, integrated sensors made of DEAP can be used to determine the actual stretch state with sufficient accuracy and high dynamics on the one hand. On the other hand the electrical behavior of the DEAP transducer itself can be evaluated for the estimation of the stretch state representing a sensor-less concept. In this paper at first the state of the art of sensor-based and sensor-less concepts for determining the stretch state of DEAP transducers is presented. Afterwards the authors propose novel concepts for DEAP-based sensors integrated into stack- and roll-actuators. These concepts are compared with each other in terms of sensitivity, accuracy, dynamics and integration efforts for the realization. Finally, fundamental concepts, estimation algorithms and different approaches for monitoring the actual stretch state are presented based on the electrical parameters of a lossy DEAP transducer, which are suitable both for sensor-based and sensor-less concepts.
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Wlodarczyk, Marek T., and David Toth. "Cylinder Head Gasket With Integrated Miniature Combustion Pressure Sensors." In ASME 2010 Internal Combustion Engine Division Fall Technical Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/icef2010-35076.

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The design and preliminary performance of a multi layer metal cylinder head gasket with integrated 1.7mm diameter combustion pressure sensors is described. The pressure sensors are either removable from the gasket without need for engine head removal or permanently fixed to the gasket. The gasket design is suitable for all sizes and types of internal combustion engines including gasoline, diesel, or alternative fuel, with peak pressures ranging from 100bar to 350bar. The sensors’ diaphragms are positioned semi-flush with the gasket surface exposed to combustion gasses while the sensors’ sealing surfaces are located 5mm-7mm from the diaphragms. The devices miniature signal conditioners are mounted inside a gasket extension protruding beyond the engine block. The miniature fiber optic pressure sensor operates on the principle of light intensity changes transmitted by two fibers upon reflection from a metal diaphragm deflecting under the effect of cylinder pressure. Preliminary test results are reported here collected on a 4-cylinder gasoline engine demonstrating good agreement with a reference transducer. When optimized, it is expected that a gasket integrated sensor will offer the accuracy of +/-1.5% enabling advanced engine controls based on Indicated Mean Effective Pressure (IMEP), Mass Fraction Burned (MFB), Peak Pressure as well as control of pilot fuel injection and virtual Mass Air Flow and NOx sensing.
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Huang, Zhenjia (Jerry), Don Spencer, Robert Oberlies, Gracie Watts, and Wenting Xiao. "Wave Impact Experiment of a GBS Model in Large Waves." In ASME 2017 36th International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/omae2017-61473.

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For the design of offshore structures in harsh wave environments, model testing continues to be the recommended industry practice for determining wave impact forces on offshore structures. Accurate measurements of wave impacts in model tests have been a challenge for several decades. Transducers are required to accurately capture the short duration, high magnitude, and dynamic nature of impact loads. The structural model, transducers, and the transducer mountings need to be designed such that mechanical vibrations in the integrated transducer-mounting-structural model system do not contaminate the wave impact measurements. In this work, the dynamic oscillations in the measurements were controlled through the design and fabrication of transducers, their mounting and the GBS model. Wave crest probability distributions were developed that included fully nonlinear effects. These distributions were used as a benchmark to qualify the waves in the wave calibration tests. The highly stochastic nature of impact loads makes it challenging to obtain converged probability distributions of the maximum impact loads (i.e. forces or pressures) from model tests. To increase the confidence in the statistical values of wave impact loads, a large number of realizations were used for a given sea state. Variability of the maximum pressure due to wave basin effects (such as wait-time between tests) was examined with fifteen repeat tests using the same wave maker control signal. These tests provided insights into the random behavior of the impact loads.
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Gallagher, Dennis G., and William D. Olstad. "Integrated Diver Display Mask (IDDM) System for Special Diving Applications." In ASME 2002 21st International Conference on Offshore Mechanics and Arctic Engineering. ASMEDC, 2002. http://dx.doi.org/10.1115/omae2002-28038.

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The United States Navy’s Coastal Systems Station (CSS) - Panama City, Florida has developed an Integrated Diver Display Mask (IDDM) system for special diving applications. The IDDM contains a miniature liquid crystal display (LCD) panel, multi-element optics, microcontroller, depth transducer, RF (radio frequency) receiver, replaceable battery, and controlling software – all built directly into a dive mask. The miniature LCD displays the diver’s depth, bottom time, and bottle pressure. In addition, the display has a number of annunciators that are illuminated when certain warning, or limit conditions are reached (i.e. ascent/descent rate too fast, low bottle pressure, or low battery). The multi-element optical lens provides a clear, highly magnified image of the LCD which is viewable regardless of environmental conditions. A commercial-off-the-shelf (COTS) RF transmitter module transmits the diver’s bottle pressure to the mask. The system is operational to depths of 135 FSW. The IDDM Project was funded by the Office of Special Technology (EOD/LIC Program), Ft. Washington, Maryland. It was conducted as a joint-development project under a Cooperative Research And Development Agreement (NCRADA - NSWCCSS-98-015) between the US Navy’s Coastal Systems Station of Panama City, Florida; and American Underwater Products, Inc. (parent company of Oceanic USA and Pelagic Pressure Systems) of San Leandro, California. The paper will describe the development of the IDDM system and suggest military, scientific, and other special applications for this unique diving technology.
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Gentilman, Richard L., Leslie J. Bowen, Robert D. Corsaro, and Brian H. Houston. "Piezoelectric Composite Panels for Underwater Acoustic Control." In ASME 1995 Design Engineering Technical Conferences collocated with the ASME 1995 15th International Computers in Engineering Conference and the ASME 1995 9th Annual Engineering Database Symposium. American Society of Mechanical Engineers, 1995. http://dx.doi.org/10.1115/detc1995-0438.

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Abstract Large area 1–3 composite piezoelectric transducer panels have been produced by Materials Systems Inc. (MSI). These SonoPanels™ measure 250 × 250 mm and have excellent response as underwater actuators as well as sensors. Piezocomposite panel manufacturing has been facilitated by an injection molding technology for fabricating net-shape lead zirconate titanate (PZT) ceramic preforms. An array of fifteen 250 × 250 mm 1–3 composite actuator panels, integrated with surface mounted pressure and velocity sensors, has been attached to a steel backing structure. The array has been evaluated for underwater active surface control applications at the Naval Research Laboratory. Sensor-actuator coupling was investigated, with good agreement between calculated and measured performance.
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Zhang, Yangxi, Fanrui Meng, Guandong Liu, Chengchen Gao, and Yilong Hao. "A Wafer-level pressure calibration method for integrated accelerometer and pressure sensor in TPMS application." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7181388.

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Wang, Jiachou, and Xinxin Li. "Monolithic-integrated silicon bulk-micromachined accelerometer and pressure-sensor for tire-pressure-monitoring-system (TPMS) application." In TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2011. http://dx.doi.org/10.1109/transducers.2011.5969145.

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