Journal articles: 'Integrated photonics circuits'

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Zhang, Chuang, Chang-Ling Zou, Yan Zhao, Chun-Hua Dong, Cong Wei, Hanlin Wang, Yunqi Liu, Guang-Can Guo, Jiannian Yao, and Yong Sheng Zhao. "Organic printed photonics: From microring lasers to integrated circuits." Science Advances 1, no. 8 (September 2015): e1500257. http://dx.doi.org/10.1126/sciadv.1500257.

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A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

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Dong, Po, Young-Kai Chen, Guang-Hua Duan, and David T. Neilson. "Silicon photonic devices and integrated circuits." Nanophotonics 3, no. 4-5 (August 1, 2014): 215–28. http://dx.doi.org/10.1515/nanoph-2013-0023.

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AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review high-performance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitride-assisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

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Matsuda, Nobuyuki, and Hiroki Takesue. "Generation and manipulation of entangled photons on silicon chips." Nanophotonics 5, no. 3 (August 1, 2016): 440–55. http://dx.doi.org/10.1515/nanoph-2015-0148.

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AbstractIntegrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

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Xiang, Chao, Warren Jin, Osama Terra, Bozhang Dong, Heming Wang, Lue Wu, Joel Guo, et al. "3D integration enables ultralow-noise isolator-free lasers in silicon photonics." Nature 620, no. 7972 (August 2, 2023): 78–85. http://dx.doi.org/10.1038/s41586-023-06251-w.

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AbstractPhotonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects1–5. However, in optical systems such as microwave synthesizers6, optical gyroscopes7 and atomic clocks8, photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format—that is, on a single chip—for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III–V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon.

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Baumann, Frieder H., Brian Popielarski, Ryan Sweeney, Felix Beaudoin, and Ken Giewont. "Failure Analysis of Photonic Integrated Circuits." EDFA Technical Articles 25, no. 3 (August 1, 2023): 23–30. http://dx.doi.org/10.31399/asm.edfa.2023-3.p023.

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Kutluyarov, Ruslan V., Aida G. Zakoyan, Grigory S. Voronkov, Elizaveta P. Grakhova, and Muhammad A. Butt. "Neuromorphic Photonics Circuits: Contemporary Review." Nanomaterials 13, no. 24 (December 14, 2023): 3139. http://dx.doi.org/10.3390/nano13243139.

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Neuromorphic photonics is a cutting-edge fusion of neuroscience-inspired computing and photonics technology to overcome the constraints of conventional computing architectures. Its significance lies in the potential to transform information processing by mimicking the parallelism and efficiency of the human brain. Using optics and photonics principles, neuromorphic devices can execute intricate computations swiftly and with impressive energy efficiency. This innovation holds promise for advancing artificial intelligence and machine learning while addressing the limitations of traditional silicon-based computing. Neuromorphic photonics could herald a new era of computing that is more potent and draws inspiration from cognitive processes, leading to advancements in robotics, pattern recognition, and advanced data processing. This paper reviews the recent developments in neuromorphic photonic integrated circuits, applications, and current challenges.

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Soref, Richard. "The Achievements and Challenges of Silicon Photonics." Advances in Optical Technologies 2008 (July 2, 2008): 1–7. http://dx.doi.org/10.1155/2008/472305.

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A brief overview of silicon photonics is given here in order to provide a context for invited and contributed papers in this special issue. Recent progress on silicon-based photonic components, photonic integrated circuits, and optoelectronic integrated circuits is surveyed. Present and potential applications are identified along with the scientific and engineering challenges that must be met in order to actualize applications. Some on-going government-sponsored projects in silicon optoelectronics are also described.

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Soref, Richard. "Reconfigurable Integrated Optoelectronics." Advances in OptoElectronics 2011 (May 4, 2011): 1–15. http://dx.doi.org/10.1155/2011/627802.

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Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

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Nikitskiy, Ivan. "Advancements in hybrid photonics integration." PhotonicsViews 21, no. 1 (January 16, 2024): 60–63. http://dx.doi.org/10.1002/phvs.202400004.

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AbstractThis article examines the latest developments in hybrid photonics integration, with a focus on the European ecosystem. It discusses the transition from low‐cost prototyping of photonic integrated circuits to the pilot line production of photonic chips.

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Yuan, Yuan, Bassem Tossoun, Zhihong Huang, Xiaoge Zeng, Geza Kurczveil, Marco Fiorentino, Di Liang, and Raymond G. Beausoleil. "Avalanche photodiodes on silicon photonics." Journal of Semiconductors 43, no. 2 (February 1, 2022): 021301. http://dx.doi.org/10.1088/1674-4926/43/2/021301.

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Abstract Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits. The Ge- or III–V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths. Herein, the last advances of monolithic and heterogeneous avalanche photodiodes on silicon are reviewed, including different device structures and semiconductor systems.

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Fang, Zhou, and Ce Zhou Zhao. "Recent Progress in Silicon Photonics: A Review." ISRN Optics 2012 (March 15, 2012): 1–27. http://dx.doi.org/10.5402/2012/428690.

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With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.

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Xie, Jingya, Wangcheng Ye, Linjie Zhou, Xuguang Guo, Xiaofei Zang, Lin Chen, and Yiming Zhu. "A Review on Terahertz Technologies Accelerated by Silicon Photonics." Nanomaterials 11, no. 7 (June 23, 2021): 1646. http://dx.doi.org/10.3390/nano11071646.

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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

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Liu, Qiang, Yinming Huang, Yongqiang Du, Zhengeng Zhao, Minming Geng, Zhenrong Zhang, and Kejin Wei. "Advances in Chip-Based Quantum Key Distribution." Entropy 24, no. 10 (September 22, 2022): 1334. http://dx.doi.org/10.3390/e24101334.

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Quantum key distribution (QKD), guaranteed by the principles of quantum mechanics, is one of the most promising solutions for the future of secure communication. Integrated quantum photonics provides a stable, compact, and robust platform for the implementation of complex photonic circuits amenable to mass manufacture, and also allows for the generation, detection, and processing of quantum states of light at a growing system’s scale, functionality, and complexity. Integrated quantum photonics provides a compelling technology for the integration of QKD systems. In this review, we summarize the advances in integrated QKD systems, including integrated photon sources, detectors, and encoding and decoding components for QKD implements. Complete demonstrations of various QKD schemes based on integrated photonic chips are also discussed.

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Thylén, Lars, Min Qiu, and Srinivasan Anand. "Photonic Crystals—A Step towards Integrated Circuits for Photonics." ChemPhysChem 5, no. 9 (September 20, 2004): 1268–83. http://dx.doi.org/10.1002/cphc.200301075.

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Yi, Ailun, Chengli Wang, Liping Zhou, Yifan Zhu, Shibin Zhang, Tiangui You, Jiaxiang Zhang, and Xin Ou. "Silicon carbide for integrated photonics." Applied Physics Reviews 9, no. 3 (September 2022): 031302. http://dx.doi.org/10.1063/5.0079649.

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Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.

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Takenaka, Mitsuru, Ziqiang Zhao, Chong Pei Ho, Takumi Fujigaki, Tipat Piyapatarakul, Yuto Miyatake, Rui Tang, Kasidit Toprasertpong, and Shinichi Takagi. "Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits." ECS Transactions 109, no. 4 (September 30, 2022): 47–58. http://dx.doi.org/10.1149/10904.0047ecst.

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Since mid-infrared (MIR) wavelengths have a great potential for optical communication, sensing, and quantum information, Si-based MIR photonic integrated circuits (PICs) have been developed by leveraging Si photonics technology for near-infrared wavelengths. However, the transparency wavelength window of Si is from 1.2 μm to 8 μm, limiting the available wavelengths in the MIR spectrum. Ge is emerging as a waveguide material to overcome this difficulty because Ge is transparent in the entire MIR spectrum. We have developed a Ge-on-insulator (GeOI) platform for MIR integrated photonics. The strong optical confinement in a GeOI waveguide enables an ultracompact MIR PIC. Using wafer bonding and Smart-cut, a GeOI wafer was successfully fabricated. As a result, we have demonstrated various Ge passive devices, thermo-optic phase shifters, modulators, and photodetectors on a GeOI platform.

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Merz, J. L., Y. R. Yuan, and G. A. Vawter. "Photonics For Integrated Circuits And Communications." Optical Engineering 24, no. 2 (April 1, 1985): 242214. http://dx.doi.org/10.1117/12.7973457.

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Pustelny, Tadeusz. "The 13th conference on Integrated Optics - Sensors, Sensing Structures and Methods IOS'2018." Photonics Letters of Poland 10, no. 1 (March 31, 2018): 1. http://dx.doi.org/10.4302/plp.v10i1.807.

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The conference covers the topical areas of optics, optoelectronics and photonics in the following aspects: fundamental and applied research, physics and technical, materials, components and devices, circuits and systems, technological and design, construction and manufacturing of photonic devices and systems, and metrology.

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Li, Chenlei, Dajian Liu, and Daoxin Dai. "Multimode silicon photonics." Nanophotonics 8, no. 2 (November 23, 2018): 227–47. http://dx.doi.org/10.1515/nanoph-2018-0161.

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AbstractMultimode silicon photonics is attracting more and more attention because the introduction of higher-order modes makes it possible to increase the channel number for data transmission in mode-division-multiplexed (MDM) systems as well as improve the flexibility of device designs. On the other hand, the design of multimode silicon photonic devices becomes very different compared with the traditional case with the fundamental mode only. Since not only the fundamental mode but also the higher-order modes are involved, one of the most important things for multimode silicon photonics is the realization of effective mode manipulation, which is not difficult, fortunately because the mode dispersion in multimode silicon optical waveguide is very strong. Great progresses have been achieved on multimode silicon photonics in the past years. In this paper, a review of the recent progresses of the representative multimode silicon photonic devices and circuits is given. The first part reviews multimode silicon photonics for MDM systems, including on-chip multichannel mode (de)multiplexers, multimode waveguide bends, multimode waveguide crossings, reconfigurable multimode silicon photonic integrated circuits, multimode chip-fiber couplers, etc. In the second part, we give a discussion about the higher-order mode-assisted silicon photonic devices, including on-chip polarization-handling devices with higher-order modes, add-drop optical filters based on multimode Bragg gratings, and some emerging applications.

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Zhang, Xian, Xiaoyue Liu, Lin Liu, Ya Han, Heyun Tan, Liu Liu, Zhongjin Lin, Siyuan Yu, Ruijun Wang, and Xinlun Cai. "Heterogeneous integration of III–V semiconductor lasers on thin-film lithium niobite platform by wafer bonding." Applied Physics Letters 122, no. 8 (February 20, 2023): 081103. http://dx.doi.org/10.1063/5.0142077.

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Thin-film lithium niobate (TFLN) photonic integrated circuits (PICs) have emerged as a promising integrated photonics platform for the optical communication, microwave photonics, and sensing applications. In recent years, rapid progress has been made on the development of low-loss TFLN waveguides, high-speed modulators, and various passive components. However, the integration of laser sources on the TFLN photonics platform is still one of the main hurdles in the path toward fully integrated TFLN PICs. Here, we present the heterogeneous integration of InP-based semiconductor lasers on a TFLN PIC. The III–V epitaxial layer stack is adhesively bonded to a TFLN waveguide circuit. In the laser device, the light is coupled from the III–V gain section to the TFLN waveguide via a multi-section spot size converter. A waveguide-coupled output power above 1 mW is achieved for the device operating at room temperature. This heterogeneous integration approach can also be used to realize on-chip photodetectors based on the same epitaxial layer stack and the same process flow, thereby enabling large-volume, low-cost manufacturing of fully integrated III–V-on-lithium niobate systems for next-generation high-capacity communication applications.

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Harris, Nicholas C., Darius Bunandar, Mihir Pant, Greg R. Steinbrecher, Jacob Mower, Mihika Prabhu, Tom Baehr-Jones, Michael Hochberg, and Dirk Englund. "Large-scale quantum photonic circuits in silicon." Nanophotonics 5, no. 3 (August 1, 2016): 456–68. http://dx.doi.org/10.1515/nanoph-2015-0146.

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AbstractQuantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today’s classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ(3)) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from e30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photon-pair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

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Seong, Yeolheon, Jinwook Kim, and Heedeuk Shin. "Grazing-Angle Fiber-to-Waveguide Coupler." Photonics 9, no. 11 (October 26, 2022): 799. http://dx.doi.org/10.3390/photonics9110799.

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The silicon photonics market has grown rapidly over recent decades due to the demand for high bandwidth and high data-transfer capabilities. Silicon photonics leverage well-developed semiconductor fabrication technologies to combine various photonic functionalities on the same chip. Complicated silicon photonic integrated circuits require a mass-producible packaging strategy with broadband, high coupling efficiency, and fiber-array fiber-to-chip couplers, which is a big challenge. In this paper, we propose a new approach to fiber-array fiber-to-chip couplers which have a complementary metal-oxide semiconductor-compatible silicon structure. An ultra-high numerical aperture fiber is polished at a grazing angle and positioned on a taper-in silicon waveguide. Our simulation results demonstrate a coupling efficiency of more than 90% over hundreds of nanometers and broad alignment tolerance ranges, supporting the use of a fiber array for the packaging. We anticipate that the proposed approach will be able to be used in commercialized systems and other photonic integrated circuit platforms, including those made from lithium niobate and silicon nitride.

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Piramidowicz, R., S. Stopiński, K. Ławniczuk, K. Welikow, P. Szczepański, X. J. M. Leijtens, and M. K. Smit. "Photonic integrated circuits – a new approach to laser technology." Bulletin of the Polish Academy of Sciences: Technical Sciences 60, no. 4 (December 1, 2012): 683–89. http://dx.doi.org/10.2478/v10175-012-0079-5.

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Abstract In this work a brief review on photonic integrated circuits (PICs) is presented with a specific focus on integrated lasers and amplifiers. The work presents the history of development of the integration technology in photonics and its comparison to microelectronics. The major part of the review is focused on InP-based photonic integrated circuits, with a short description of the potential of the silicon technology. A completely new way of fabrication of PICs, called generic integration technology, is presented and discussed. The basic assumption of this approach is the very same as in the case of electronic circuits and states that a limited set of standard components, both active and passive, enables designing of a complex, multifunctional PIC of every type. As a result, functionally advanced, compact, energy efficient and cost-optimized photonic devices can be fabricated. The work presents also selected examples of active PICs like multiwavelength laser sources, discretely tunable lasers, WDM transmitters, ring lasers etc.

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Mobini, Ehsan, Daniel H. G. Espinosa, Kaustubh Vyas, and Ksenia Dolgaleva. "AlGaAs Nonlinear Integrated Photonics." Micromachines 13, no. 7 (June 24, 2022): 991. http://dx.doi.org/10.3390/mi13070991.

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Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others. Numerous nonlinear waveguide platforms have been explored for these roles; the group of materials capable of combining both passive and active functionalities monolithically on the same chip is III–V semiconductors. AlGaAs is the most studied III–V nonlinear waveguide platform to date; it exhibits both second- and third-order optical nonlinearity and can be used for a wide range of integrated nonlinear photonic devices. In this review, we conduct an extensive overview of various AlGaAs nonlinear waveguide platforms and geometries, their nonlinear optical performances, as well as the measured values and wavelength dependencies of their effective nonlinear coefficients. Furthermore, we highlight the state-of-the-art achievements in the field, among which are efficient tunable wavelength converters, on-chip frequency-comb generation, and ultra-broadband on-chip supercontinuum generation. Moreover, we overview the applications in development where AlGaAs nonlinear functional devices aspire to be the game-changers. Among such applications, there is all-optical signal processing in optical communication networks and integrated quantum photonic circuits.

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Li, Jiang, Chaoyue Liu, Haitao Chen, Jingshu Guo, Ming Zhang, and Daoxin Dai. "Hybrid silicon photonic devices with two-dimensional materials." Nanophotonics 9, no. 8 (May 14, 2020): 2295–314. http://dx.doi.org/10.1515/nanoph-2020-0093.

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AbstractSilicon photonics is becoming more and more attractive in the applications of optical interconnections, optical computing, and optical sensing. Although various silicon photonic devices have been developed rapidly, it is still not easy to realize active photonic devices and circuits with silicon alone due to the intrinsic limitations of silicon. In recent years, two-dimensional (2D) materials have attracted extensive attentions due to their unique properties in electronics and photonics. 2D materials can be easily transferred onto silicon and thus provide a promising approach for realizing active photonic devices on silicon. In this paper, we give a review on recent progresses towards hybrid silicon photonics devices with 2D materials, including two parts. One is silicon-based photodetectors with 2D materials for the wavelength-bands from ultraviolet (UV) to mid-infrared (MIR). The other is silicon photonic switches/modulators with 2D materials, including high-speed electro-optical modulators, high-efficiency thermal-optical switches and low-threshold all-optical modulators, etc. These hybrid silicon photonic devices with 2D materials devices provide an alternative way for the realization of multifunctional silicon photonic integrated circuits in the future.

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Corrielli, Giacomo, Andrea Crespi, and Roberto Osellame. "Femtosecond laser micromachining for integrated quantum photonics." Nanophotonics 10, no. 15 (October 1, 2021): 3789–812. http://dx.doi.org/10.1515/nanoph-2021-0419.

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Abstract Integrated quantum photonics, i.e. the generation, manipulation, and detection of quantum states of light in integrated photonic chips, is revolutionizing the field of quantum information in all applications, from communications to computing. Although many different platforms are being currently developed, from silicon photonics to lithium niobate photonic circuits, none of them has shown the versatility of femtosecond laser micromachining (FLM) in producing all the components of a complete quantum system, encompassing quantum sources, reconfigurable state manipulation, quantum memories, and detection. It is in fact evident that FLM has been a key enabling tool in the first-time demonstration of many quantum devices and functionalities. Although FLM cannot achieve the same level of miniaturization of other platforms, it still has many unique advantages for integrated quantum photonics. In particular, in the last five years, FLM has greatly expanded its range of quantum applications with several scientific breakthroughs achieved. For these reasons, we believe that a review article on this topic is very timely and could further promote the development of this field by convincing end-users of the great potentials of this technological platform and by stimulating more research groups in FLM to direct their efforts to the exciting field of quantum technologies.

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Sun, Haoyang, Qifeng Qiao, Qingze Guan, and Guangya Zhou. "Silicon Photonic Phase Shifters and Their Applications: A Review." Micromachines 13, no. 9 (September 12, 2022): 1509. http://dx.doi.org/10.3390/mi13091509.

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With the development of silicon photonics, dense photonic integrated circuits play a significant role in applications such as light detection and ranging systems, photonic computing accelerators, miniaturized spectrometers, and so on. Recently, extensive research work has been carried out on the phase shifter, which acts as the fundamental building block in the photonic integrated circuit. In this review, we overview different types of silicon photonic phase shifters, including micro-electro-mechanical systems (MEMS), thermo-optics, and free-carrier depletion types, highlighting the MEMS-based ones. The major working principles of these phase shifters are introduced and analyzed. Additionally, the related works are summarized and compared. Moreover, some emerging applications utilizing phase shifters are introduced, such as neuromorphic computing systems, photonic accelerators, multi-purpose processing cores, etc. Finally, a discussion on each kind of phase shifter is given based on the figures of merit.

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Ceccarelli, Francesco, and Roberto Osellame. "Photonic integrated circuits through femtosecond laser waveguide writing in glass." Photoniques, no. 125 (2024): 39–44. http://dx.doi.org/10.1051/photon/202412539.

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Integrated photonics is increasingly pivotal across various fields due to its inherent stability, scalability, and compactness. In the landscape of integrated photonic platforms, femtosecond laser writing is a novel microfabrication technique that is swiftly emerging as a strong contender to established photolithographybased methods. This paper presents a primer on the femtosecond laser writing process and explores its capabilities for creating versatile and reprogrammable processors. Furthermore, we examine the application of this technology to the realization of integrated devices designed to leverage the distinctive features of this technology for critical areas such as quantum information processing and astrophotonics.

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Dietrich, Christof P., Andrea Fiore, Mark G. Thompson, Martin Kamp, and Sven Höfling. "GaAs integrated quantum photonics: Towards compact and multi-functional quantum photonic integrated circuits." Laser & Photonics Reviews 10, no. 6 (September 14, 2016): 870–94. http://dx.doi.org/10.1002/lpor.201500321.

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Snigirev, Viacheslav, Annina Riedhauser, Grigory Lihachev, Mikhail Churaev, Johann Riemensberger, Rui Ning Wang, Anat Siddharth, et al. "Ultrafast tunable lasers using lithium niobate integrated photonics." Nature 615, no. 7952 (March 15, 2023): 411–17. http://dx.doi.org/10.1038/s41586-023-05724-2.

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AbstractEarly works1 and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits2,3, modulators with improved half-wave voltage4,5, electro-optic frequency combs6 and on-chip electro-optic devices, with applications ranging from microwave photonics to microwave-to-optical quantum interfaces7. Although recent advances have demonstrated tunable integrated lasers based on LiNbO3 (refs. 8,9), the full potential of this platform to demonstrate frequency-agile, narrow-linewidth integrated lasers has not been achieved. Here we report such a laser with a fast tuning rate based on a hybrid silicon nitride (Si3N4)–LiNbO3 photonic platform and demonstrate its use for coherent laser ranging. Our platform is based on heterogeneous integration of ultralow-loss Si3N4 photonic integrated circuits with thin-film LiNbO3 through direct bonding at the wafer level, in contrast to previously demonstrated chiplet-level integration10, featuring low propagation loss of 8.5 decibels per metre, enabling narrow-linewidth lasing (intrinsic linewidth of 3 kilohertz) by self-injection locking to a laser diode. The hybrid mode of the resonator allows electro-optic laser frequency tuning at a speed of 12 × 1015 hertz per second with high linearity and low hysteresis while retaining the narrow linewidth. Using a hybrid integrated laser, we perform a proof-of-concept coherent optical ranging (FMCW LiDAR) experiment. Endowing Si3N4 photonic integrated circuits with LiNbO3 creates a platform that combines the individual advantages of thin-film LiNbO3 with those of Si3N4, which show precise lithographic control, mature manufacturing and ultralow loss11,12.

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Krochin-Yepez, Pedro-Andrei, Ulrike Scholz, and Andre Zimmermann. "CMOS-Compatible Measures for Thermal Management of Phase-Sensitive Silicon Photonic Systems." Photonics 7, no. 1 (January 1, 2020): 6. http://dx.doi.org/10.3390/photonics7010006.

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To date, several photonic applications have been demonstrated without considerable thermal management efforts. However, in phase-sensitive photonic applications, thermal management becomes of utmost importance. Thermal management of photonic systems requires not only efficient heat dissipation, but also reduction of on-chip temperature gradients. Particularly in highly integrated systems, in which several components are integrated within a single photonic integrated circuit, the reduction of on-chip temperature gradients is necessary to guarantee the correct functionality of the system. Due to their high integration density as well as their extreme temperature sensitivity, optical phased arrays are ideal examples of a system, where thermal management is required. Ideally, thermal management solutions of such systems should not require additional power for operation. Therefore, it is desired to improve the heat dissipation and to reduce temperature gradients by structural modifications of the photonic circuit. Furthermore, to cope with the advantages of silicon photonics, thermal management solutions must be compatible with series fabrication processes. In this work, complementary metal–oxide–semiconductor (CMOS)-compatible measures for thermal management of silicon photonic integrated circuits are proposed and validated by characterization of in-house fabricated thermal demonstrators. The proposed concepts are extremely efficient not only in reducing temperature gradients, but also in improving the heat dissipation from integrated heat sources.

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Krishnamoorthy, A. V., and K. W. Goossen. "Optoelectronic-VLSI: photonics integrated with VLSI circuits." IEEE Journal of Selected Topics in Quantum Electronics 4, no. 6 (1998): 899–912. http://dx.doi.org/10.1109/2944.736073.

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Andrini, Greta, Francesco Amanti, Fabrizio Armani, Vittorio Bellani, Vincenzo Bonaiuto, Simone Cammarata, Matteo Campostrini, et al. "Solid-State Color Centers for Single-Photon Generation." Photonics 11, no. 2 (February 19, 2024): 188. http://dx.doi.org/10.3390/photonics11020188.

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Single-photon sources are important for integrated photonics and quantum technologies, and can be used in quantum key distribution, quantum computing, and sensing. Color centers in the solid state are a promising candidate for the development of the next generation of single-photon sources integrated in quantum photonics devices. They are point defects in a crystal lattice that absorb and emit light at given wavelengths and can emit single photons with high efficiency. The landscape of color centers has changed abruptly in recent years, with the identification of a wider set of color centers and the emergence of new solid-state platforms for room-temperature single-photon generation. This review discusses the emerging material platforms hosting single-photon-emitting color centers, with an emphasis on their potential for the development of integrated optical circuits for quantum photonics.

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Rahim, Abdul, Eva Ryckeboer, Ananth Z. Subramanian, Stephane Clemmen, Bart Kuyken, Ashim Dhakal, Ali Raza, et al. "Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits." Journal of Lightwave Technology 35, no. 4 (February 15, 2017): 639–49. http://dx.doi.org/10.1109/jlt.2016.2617624.

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Mu, Xin, Sailong Wu, Lirong Cheng, and H. Y. Fu. "Edge Couplers in Silicon Photonic Integrated Circuits: A Review." Applied Sciences 10, no. 4 (February 24, 2020): 1538. http://dx.doi.org/10.3390/app10041538.

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Silicon photonics has drawn increasing attention in the past few decades and is a promising key technology for future daily applications due to its various merits including ultra-low cost, high integration density owing to the high refractive index of silicon, and compatibility with current semiconductor fabrication process. Optical interconnects is an important issue in silicon photonic integrated circuits for transmitting light, and fiber-to-chip optical interconnects is vital in application scenarios such as data centers and optical transmission systems. There are mainly two categories of fiber-to-chip optical coupling: off-plane coupling and in-plane coupling. Grating couplers work under the former category, while edge couplers function as in-plane coupling. In this paper, we mainly focus on edge couplers in silicon photonic integrated circuits. We deliver an introduction to the research background, operation mechanisms, and design principles of silicon photonic edge couplers. The state-of-the-art of edge couplers is reviewed according to the different structural configurations of the device, while identifying the performance, fabrication feasibility, and applications. In addition, a brief comparison between edge couplers and grating couplers is conducted. Packaging issues are also discussed, and several prospective techniques for further improvements of edge couplers are proposed.

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Amanti, Francesco, Greta Andrini, Fabrizio Armani, Fabrizio Barbato, Vittorio Bellani, Vincenzo Bonaiuto, Simone Cammarata, et al. "Integrated Photonic Passive Building Blocks on Silicon-On-Insulator Platform." Photonics 11, no. 6 (May 23, 2024): 494. http://dx.doi.org/10.3390/photonics11060494.

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Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few ’building blocks’ which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon.

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Novack, Ari, Matt Streshinsky, Ran Ding, Yang Liu, Andy Eu-Jin Lim, Guo-Qiang Lo, Tom Baehr-Jones, and Michael Hochberg. "Progress in silicon platforms for integrated optics." Nanophotonics 3, no. 4-5 (August 1, 2014): 205–14. http://dx.doi.org/10.1515/nanoph-2013-0034.

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AbstractRapid progress has been made in recent years repurposing CMOS fabrication tools to build complex photonic circuits. As the field of silicon photonics becomes more mature, foundry processes will be an essential piece of the ecosystem for eliminating process risk and allowing the community to focus on adding value through clever design. Multi-project wafer runs are a useful tool to promote further development by providing inexpensive, low-risk prototyping opportunities to academic and commercial researchers. Compared to dedicated silicon manufacturing runs, multi-project-wafer runs offer cost reductions of 100× or more. Through OpSIS, we have begun to offer validated device libraries that allow designers to focus on building systems rather than modifying device geometries. The EDA tools that will enable rapid design of such complex systems are under intense development. Progress is also being made in developing practical optical and electronic packaging solutions for the photonic chips, in ways that eliminate or sharply reduce development costs for the user community. This paper will provide a review of the recent developments in silicon photonic foundry offerings with a focus on OpSIS, a multi-project-wafer foundry service offering a silicon photonics platform, including a variety of passive components as well as high-speed modulators and photodetectors, through the Institute of Microelectronics in Singapore.

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Dietrich, Christof P., Andrea Fiore, Mark G. Thompson, Martin Kamp, and Sven Höfling. "GaAs integrated quantum photonics: Towards compact and multi-functional quantum photonic integrated circuits (Laser Photonics Rev. 10(6)/2016)." Laser & Photonics Reviews 10, no. 6 (November 2016): 857. http://dx.doi.org/10.1002/lpor.201670065.

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Qiao, Qifeng, Haoyang Sun, Xinmiao Liu, Bowei Dong, Ji Xia, Chengkuo Lee, and Guangya Zhou. "Suspended Silicon Waveguide with Sub-Wavelength Grating Cladding for Optical MEMS in Mid-Infrared." Micromachines 12, no. 11 (October 26, 2021): 1311. http://dx.doi.org/10.3390/mi12111311.

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Mid-infrared (MIR) photonics are generating considerable interest because of the potential applications in spectroscopic sensing, thermal imaging, and remote sensing. Silicon photonics is believed to be a promising solution to realize MIR photonic integrated circuits (PICs). The past decade has seen a huge growth in MIR PIC building blocks. However, there is still a need for the development of MIR reconfigurable photonics to enable powerful on-chip optical systems and new functionalities. In this paper, we present an MIR (3.7~4.1 μm wavelength range) MEMS reconfiguration approach using the suspended silicon waveguide platform on the silicon-on-insulator. With the sub-wavelength grating claddings, the photonic waveguide can be well integrated with the MEMS actuator, thus offering low-loss, energy-efficient, and effective reconfiguration. We present a simulation study on the waveguide design and depict the MEMS-integration approach. Moreover, we experimentally report the suspended waveguide with propagation loss (−2.9 dB/cm) and bending loss (−0.076 dB each). The suspended waveguide coupler is experimentally investigated. In addition, we validate the proposed optical MEMS approach using a reconfigurable ring resonator design. In conclusion, we experimentally demonstrate the proposed waveguide platform’s capability for MIR MEMS-reconfigurable photonics, which empowers the MIR on-chip optical systems for various applications.

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Xiang, Chao, and John E. Bowers. "Building 3D integrated circuits with electronics and photonics." Nature Electronics 7, no. 6 (June 27, 2024): 422–24. http://dx.doi.org/10.1038/s41928-024-01187-z.

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Djavid, M., M. H. T. Dastjerdi, M. R. Philip, D. D. Choudhary, A. Khreishah, and H. P. T. Nguyen. "4-Port reciprocal optical circulators employing photonic crystals for integrated photonics circuits." Optik 144 (September 2017): 586–90. http://dx.doi.org/10.1016/j.ijleo.2017.06.115.

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Li, Zizheng, Bruno Lopez-Rodriguez, Naresh Sharma, and Iman Esmaeil-Zadeh. "Heterogeneous interconnection of low-loss and dense material platforms using adiabatic tapering coupler." EPJ Web of Conferences 287 (2023): 01014. http://dx.doi.org/10.1051/epjconf/202328701014.

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Recently, we successfully realized amorphous silicon carbide (a-SiC) integrated photonics with optical losses as low as 0.78 dB/cm. Moreover, the deposition of a-SiC was done at 150 ℃, which enables successful lift of a-SiC as an additive step to existing photonics circuits. In this work, we present an adiabatic taper coupler which provides bidirectional lossless connection between two integrated photonics platforms: thin-film silicon nitride (Si3N4) and a-SiC. Normalized power transmission of 96.61% is presented, and the coupler enables strong confinement when coupling from weakly confined thin-film device to normal thickness device. By utilizing such a coupler as bridge, switching back and forth between Si3N4 and a-SiC platforms can be easily realized. This allow us to carry out applications including quantum interference and digital Fourier spectroscopy, in which long optical delay lines are constructed on Si3N4 and highly integrated circuits are built on a-SiC.

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Son, Gyeongho, Seungjun Han, Jongwoo Park, Kyungmok Kwon, and Kyoungsik Yu. "High-efficiency broadband light coupling between optical fibers and photonic integrated circuits." Nanophotonics 7, no. 12 (October 20, 2018): 1845–64. http://dx.doi.org/10.1515/nanoph-2018-0075.

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AbstractEfficient light energy transfer between optical waveguides has been a critical issue in various areas of photonics and optoelectronics. Especially, the light coupling between optical fibers and integrated waveguide structures provides essential input-output interfaces for photonic integrated circuits (PICs) and plays a crucial role in reliable optical signal transport for a number of applications, such as optical interconnects, optical switching, and integrated quantum optics. Significant efforts have been made to improve light coupling properties, including coupling efficiency, bandwidth, polarization dependence, alignment tolerance, as well as packing density. In this review article, we survey three major light coupling methods between optical fibers and integrated waveguides: end-fire coupling, diffraction grating-based coupling, and adiabatic coupling. Although these waveguide coupling methods are different in terms of their operating principles and physical implementations, they have gradually adopted various nanophotonic structures and techniques to improve the light coupling properties as our understanding to the behavior of light and nano-fabrication technology advances. We compare the pros and cons of each light coupling method and provide an overview of the recent developments in waveguide coupling between optical fibers and integrated photonic circuits.

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Ma, Jingwen, Xiang Xi, and Xiankai Sun. "Topological Photonics: Topological Photonic Integrated Circuits Based on Valley Kink States (Laser Photonics Rev. 13(12)/2019)." Laser & Photonics Reviews 13, no. 12 (December 2019): 1970049. http://dx.doi.org/10.1002/lpor.201970049.

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Shoji, Yuya, and Tetsuya Mizumoto. "Waveguide magneto-optical devices for photonics integrated circuits [Invited]." Optical Materials Express 8, no. 8 (July 26, 2018): 2387. http://dx.doi.org/10.1364/ome.8.002387.

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Zilkie, Aaron J., Pradeep Srinivasan, Andrea Trita, Thomas Schrans, Guomin Yu, Jerry Byrd, David A. Nelson, et al. "Multi-Micron Silicon Photonics Platform for Highly Manufacturable and Versatile Photonic Integrated Circuits." IEEE Journal of Selected Topics in Quantum Electronics 25, no. 5 (September 2019): 1–13. http://dx.doi.org/10.1109/jstqe.2019.2911432.

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Jin, Ming, Ziyi Wei, Yanfang Meng, Haowen Shu, Yuansheng Tao, Bowen Bai, and Xingjun Wang. "Silicon-Based Graphene Electro-Optical Modulators." Photonics 9, no. 2 (January 31, 2022): 82. http://dx.doi.org/10.3390/photonics9020082.

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With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators.

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Adcock, Jeremy C., and Yunhong Ding. "Quantum prospects for hybrid thin-film lithium niobate on silicon photonics." Frontiers of Optoelectronics 15, no. 1 (April 11, 2022). http://dx.doi.org/10.1007/s12200-022-00006-7.

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Abstract Photonics is poised to play a unique role in quantum technology for computation, communications and sensing. Meanwhile, integrated photonic circuits—with their intrinsic phase stability and high-performance, nanoscale components—offer a route to scaling. However, each integrated platform has a unique set of advantages and pitfalls, which can limit their power. So far, the most advanced demonstrations of quantum photonic circuitry has been in silicon photonics. However, thin-film lithium niobate (TFLN) is emerging as a powerful platform with unique capabilities; advances in fabrication have yielded loss metrics competitive with any integrated photonics platform, while its large second-order nonlinearity provides efficient nonlinear processing and ultra-fast modulation. In this short review, we explore the prospects of dynamic quantum circuits—such as multiplexed photon sources and entanglement generation—on hybrid TFLN on silicon (TFLN/Si) photonics and argue that hybrid TFLN/Si photonics may have the capability to deliver the photonic quantum technology of tomorrow. Graphical Abstract

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Sund, Patrik I., Emma Lomonte, Stefano Paesani, Ying Wang, Jacques Carolan, Nikolai Bart, Andreas D. Wieck, et al. "High-speed thin-film lithium niobate quantum processor driven by a solid-state quantum emitter." Science Advances 9, no. 19 (May 12, 2023). http://dx.doi.org/10.1126/sciadv.adg7268.

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Scalable photonic quantum computing architectures pose stringent requirements on photonic processing devices. The needs for low-loss high-speed reconfigurable circuits and near-deterministic resource state generators are some of the most challenging requirements. Here, we develop an integrated photonic platform based on thin-film lithium niobate and interface it with deterministic solid-state single-photon sources based on quantum dots in nanophotonic waveguides. The generated photons are processed with low-loss circuits programmable at speeds of several gigahertz. We realize a variety of key photonic quantum information processing functionalities with the high-speed circuits, including on-chip quantum interference, photon demultiplexing, and reprogrammability of a four-mode universal photonic circuit. These results show a promising path forward for scalable photonic quantum technologies by merging integrated photonics with solid-state deterministic photon sources in a heterogeneous approach to scaling up.

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Guo, Chenzi. "Light People: Professor Xianfeng Chen spoke about integrated photonics." Light: Science & Applications 11, no. 1 (July 12, 2022). http://dx.doi.org/10.1038/s41377-022-00910-9.

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EditorialIn 1969, Stewart E. Miller published “Integrated optics: an introduction”, which outlined a proposal for a miniature form of laser beam circuitry, marking the first research paper about what is now known as integrated photonics. Now half a century has passed, integrated photonics grew robustly from integrating a limited number of devices and functions towards versatile and industrialized photonic integrated circuits. In this interview, Light: Science & Applications invited Prof. Xianfeng Chen [see the “Short Bio” section] to share his insight about the past, present and future of integrated photonics.

Journal articles on the topic 'Integrated photonics circuits'

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