Dissertations / Theses on the topic 'Integrated photonics circuits'
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1
Bernard, Martino. "Lightwave circuits for integrated Silicon Photonics." Doctoral thesis, Università degli studi di Trento, 2017. https://hdl.handle.net/11572/368818.
Abstract:
This thesis work covers scientific and technological advancements in integrated silicon photonics circuits aimed at developing an All-On-Chip device for quantum photonics experiments. The work has been carried out within the framework of project SiQuro, where the Silicon-On-Insulator platform is chosen to integrate all the components of an optical bench necessary for a quantum experiment into a single chip. The problem of generating photon pairs have been addressed by studying second order polarisation effects in strained silicon with the aim to realize a bright photon pairs source based on Spontaneous Down Conversion. The study revealed that processes other than the Pockels effect are responsible for the non-linearity coefficients previously measured, suggesting to look for other candidate processes for the generation of photon pairs, as third order non-linear processes. To provide with the bright coherent source necessary to enable non-linear processes the integration of a hybrid III-V-silicon mode-locked laser has also been studied. During this study, technological novelties have also been developed by modelling the wedge profile obtained during the wet etching of silicon glass materials to engineer 3D structures. In parallel, the physics of whispering gallery mode resonators, both in silicon and in silicon glass materials, have been addressed. Silicon nitride Ultra High-Quality resonators have been demonstrated by using a strip-loaded configuration, while relative tuning of resonant modes has been demonstrated in an all-optical experiment exploiting the thermo-optic effect.
This work represents a step forward in the study of the physics and applications of silicon-based lightwave circuits for integrated photonics.
2
Bernard, Martino. "Lightwave circuits for integrated Silicon Photonics." Doctoral thesis, University of Trento, 2017. http://eprints-phd.biblio.unitn.it/2067/1/Disclaimer_thesis_signed.pdf.
Abstract:
This thesis work covers scientific and technological advancements in integrated silicon photonics circuits aimed at developing an All-On-Chip device for quantum photonics experiments. The work has been carried out within the framework of project SiQuro, where the Silicon-On-Insulator platform is chosen to integrate all the components of an optical bench necessary for a quantum experiment into a single chip. The problem of generating photon pairs have been addressed by studying second order polarisation effects in strained silicon with the aim to realize a bright photon pairs source based on Spontaneous Down Conversion. The study revealed that processes other than the Pockels effect are responsible for the non-linearity coefficients previously measured, suggesting to look for other candidate processes for the generation of photon pairs, as third order non-linear processes. To provide with the bright coherent source necessary to enable non-linear processes the integration of a hybrid III-V-silicon mode-locked laser has also been studied. During this study, technological novelties have also been developed by modelling the wedge profile obtained during the wet etching of silicon glass materials to engineer 3D structures. In parallel, the physics of whispering gallery mode resonators, both in silicon and in silicon glass materials, have been addressed. Silicon nitride Ultra High-Quality resonators have been demonstrated by using a strip-loaded configuration, while relative tuning of resonant modes has been demonstrated in an all-optical experiment exploiting the thermo-optic effect.
This work represents a step forward in the study of the physics and applications of silicon-based lightwave circuits for integrated photonics.
3
Koch, Thomas L., Michael Liehr, Douglas Coolbaugh, John E. Bowers, Rod Alferness, Michael Watts, and Lionel Kimerling. "The American Institute for Manufacturing Integrated Photonics: advancing the ecosystem." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621540.
Abstract:
The American Institute for Manufacturing Integrated Photonics (AIM Photonics) is focused on developing an end- to- end integrated photonics ecosystem in the U.S., including domestic foundry access, integrated design tools, automated packaging, assembly and test, and workforce development. This paper describes how the institute has been structured to achieve these goals, with an emphasis on advancing the integrated photonics ecosystem. Additionally, it briefly highlights several of the technological development targets that have been identified to provide enabling advances in the manufacture and application of integrated photonics.
4
Desai, Smit Haritkumar. "Integrated Photonics Circuits with Optical Crosstalk Reduction." Thesis, The University of Sydney, 2020. https://hdl.handle.net/2123/24981.
Abstract:
Silicon integrated photonics has been at the forefront of research for complex applications such as LIDAR, switch arrays etc. Many of these applications require high number of channels for a single device which are classified as waveguide arrays. Highly dense arrays of waveguides present new challenges such as presence of optical crosstalk which introduce a trade-off between the performance and dimension of a device. In this thesis, I address the crosstalk limitations for dense optical phased arrays and optical splitters by applying crosstalk reduction methodologies such as superlattice or evanescent strip structures to achieve scalable and compact devices in Silicon on Insulator (SOI) platform. A combination of simulation methods such as finite-difference time domain (FDTD), finite element method (FEM) and Eigenmode expansion (EME) have been used to design the devices.
The thesis presents the negative impact of high optical crosstalk on the performance of optical splitters such as Multimode Interference coupler (MMI). A compact 6 µm x 10 µm MMI splitter with 6 output channels and superlattice crosstalk reduction method at the output has been demonstrated to achieve high uniformity of 0.83 dB and insertion loss of 0.3 dB. The scalable nature of the superlattice structure has also been shown.
Additionally, the thesis proposes a vertical grating coupler (VGC) for rib waveguides on 3C-Silicon Carbide (SiC) undercut domain. The design is optimized across a broad wavelength range of 1500-1600 nm using 2D-FDTD procedure. Largest coupling efficiency of 3.3 dB is achieved at 1560 nm with a broad bandwidth of 114 nm. This VGC spectrum has been used to quantify the impact of dry annealing on the dimensions of other SiC structures.
5
Liu, Weilin. "Ultra-Fast Photonic Signal Processors Based on Photonic Integrated Circuits." Thesis, Université d'Ottawa / University of Ottawa, 2017. http://hdl.handle.net/10393/36446.
Abstract:
Photonic signal processing has been considered a promising solution to overcome the inherent bandwidth limitations of its electronic counterparts. Over the last few years, an impressive range of photonic integrated signal processors have been proposed with the technological advances of III-V and silicon photonics, but the signal processors offer limited tunability or reconfigurability, a feature highly needed for the implementation of programmable photonic signal processors.
In this thesis, tunable and reconfigurable photonic signal processors are studied. Specifically, a photonic signal processor based on the III-V material system having a single ring resonator structure for temporal integration and Hilbert transformation with a tunable fractional order and tunable operation wavelength is proposed and experimentally demonstrated. The temporal integrator has an integration time of 6331 ps, which is an order of magnitude longer than that provided by the previously reported photonic integrators. The processor can also provide a continuously tunable fractional order and a tunable operation wavelength.
To enable general-purpose signal processing, a reconfigurable photonic signal processor based on the III-V material system having a three-coupled ring resonator structure is proposed and experimentally demonstrated. The reconfigurability of the processor is achieved by forward or reverse biasing the semiconductor optical amplifiers (SOAs) in the ring resonators, to change the optical geometry of the processor which allows the processor to perform different photonic signal processing functions including temporal integration, temporal differentiation, and Hilbert transformation. The integration time of the signal processor is measured to be 10.9 ns, which is largely improved compared with the single ring resonator structure due to a higher Q-factor. In addition, 1st, 2nd, and 3rd of temporal integration operations are demonstrated, as well as a continuously tunable order for differentiation and Hilbert transformation. The tuning range of the operation wavelength is 0.22 nm for the processor to perform the three functions.
Compared with the III-V material system, the CMOS compatible SOI material system is more cost effective, and it offers a smaller footprint due to the strong refractive index contrast between silicon and silica. Active components such as phase modulators (PMs) can also be implemented. In this thesis, two photonic temporal differentiators having an interferometer structure to achieve active and passive fractional order tuning are proposed and experimentally demonstrated. For both the active and passive temporal differentiators, the fractional order can be tuned from 0 to 1. For the active temporal differentiator, the tuning range of the operation wavelength is 0.74 nm. The use of the actively tunable temporal differentiator to perform high speed coding with a data rate of 16 Gbps is also experimentally demonstrated.
6
Alipour, Motaallem Seyed Payam. "Reconfigurable integrated photonic circuits on silicon." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51792.
Abstract:
Integrated optics as a platform for signal processing offers significant benefits such as large bandwidth, low loss, and a potentially high degree of reconfigurability. Silicon (Si) has unique advantages as a material platform for integration, as well as properties such as a strong thermo-optic mechanism that allows for the realization of highly reconfigurable photonic systems. Chapter 1 is devoted to the discussion of these advantages, and Chapter 2 provides the theoretical background for the analysis of integrated Si-photonic devices. The thermo-optic property of Si, while proving extremely useful in facilitating reconfiguration, can turn into a nuisance when there is a need for thermally stable devices on the photonic chip. Chapter 3 presents a technique for resolving this issue without relying on a dynamic temperature stabilization process. Temperature-insensitive (or “athermal”) Si microdisk resonators with low optical loss are realized by using a polymer overlayer whose thermo-optic property is opposite to that of Si, and TiO2 is introduced as an alternative to polymer to deal with potential CMOS-compatibility issues. Chapter 4 demonstrates an ultra-compact, low-loss, fully reconfigurable, and high-finesse integrated photonic filter implemented on a Si chip, which can be used for RF-photonic as well as purely optical signal processing purposes. A novel, thermally reconfigurable reflection suppressor is presented in Chapter 5 for on-chip feedback elimination which can be critical for mitigating spurious interferences and protecting lasers from disturbance. Chapter 6 demonstrates a novel device for on-chip control of optical fiber polarization. Chapter 7 deals with select issues in the implementation of Si integrated photonic circuits. Chapter 8 concludes the dissertation.
7
Lloret, Soler Juan Antonio. "Slow Light Effects in Photonic Integrated Circuits with Application to Microwave Photonics." Doctoral thesis, Universitat Politècnica de València, 2012. http://hdl.handle.net/10251/16472.
Abstract:
Esta tesis doctoral tiene como objetivo el diseño y la implementación de dispositivos ópticos novedosos capaces de realizar tareas de procesado de señales de rediofrecuencia, concretamente en las bandas de microondas y milimétricas, explotando para ello efectos de luz lenta que tienen lugar sobre algunos medios físicos que presentan características especiales. Con este propósito, se han investigado estructuras basadas en tecnología de semiconductor en guiaonda, además de estructuras de naturaleza resonante sobre circuitos en silicio y compuestos híbridos fabricados con materiales activos pertenecientes a los grupos III-V sobre silicio. En concreto, se han prouestos diferentes circuitos ópticos capaces de desarrollar tareas propias de desfasador y retardadeo verdadero de banda ancha para señales de radiofrecuncia. El comportamiento de dichos circuitos ópticos bajo estudio se ha caracterizado mediante modelado teórico, quedando éstos adecuadamente validados a través de resultados experimentales. En primer lugar, se han llevado a cabo estudios concernientes a la degradación producida por ruido en estructuras desfasadores formadas por amplificadores ópticos de semiconductor. Como resultado, se ha propuesto una nueva estructura que ha revertido en un rendimiento optimizado en términos de ruido sin que ello suponga una alteración en su funcionnalidad básica como desfasador. Esta estructura desfasadora ha sido el elemento clave en el ensamblado de un filtro elimina banda sintonizable. En segundo lugar, se han utilizado diferentes configuraciones basadas en anillos de silicio con dimensiones micrométricas para el desarrollo e implementación de diferentes procesadores de señal, tales como filtros reconfigurables y sintonizables y retardadores multicanal. Concretamente, se ha introducido un nuevo concepto inspirado en la técnica conocida como SCT, cuyo beneficio redunda en un aumento considerable del ancho de banda útil de las señales de radiofrecuencia a procesar gracias aLloret Soler, JA. (2012). Slow Light Effects in Photonic Integrated Circuits with Application to Microwave Photonics [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/16472
Palancia
8
Orlandi, Piero <1984>. "Silicon Photonics Integrated Circuits for Flexible Optical Systems." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amsdottorato.unibo.it/6507/1/orlandi_piero_tesi.pdf.
Abstract:
This dissertation deals with the design and the characterization of novel reconfigurable silicon-on-insulator (SOI) devices to filter and route optical signals on-chip. Design is carried out through circuit simulations based on basic circuit elements (Building Blocks, BBs) in order to prove the feasibility of an approach allowing to move the design of Photonic Integrated Circuits (PICs) toward the system level.
CMOS compatibility and large integration scale make SOI one of the most promising material to realize PICs. The concepts of generic foundry and BB based circuit simulations for the design are emerging as a solution to reduce the costs and increase the circuit complexity.
To validate the BB based approach, the development of some of the most important BBs is performed first. A novel tunable coupler is also presented and it is demonstrated to be a valuable alternative to the known solutions.
Two novel multi-element PICs are then analysed: a narrow linewidth single mode resonator and a passband filter with widely tunable bandwidth. Extensive circuit simulations are carried out to determine their performance, taking into account fabrication tolerances.
The first PIC is based on two Grating Assisted Couplers in a ring resonator (RR) configuration. It is shown that a trade-off between performance, resonance bandwidth and device footprint has to be performed. The device could be employed to realize reconfigurable add-drop de/multiplexers. Sensitivity with respect to fabrication tolerances and spurious effects is however observed.
The second PIC is based on an unbalanced Mach-Zehnder interferometer loaded with two RRs. Overall good performance and robustness to fabrication tolerances and nonlinear effects have confirmed its applicability for the realization of flexible optical systems.
Simulated and measured devices behaviour is shown to be in agreement thus demonstrating the viability of a BB based approach to the design of complex PICs.
9
Orlandi, Piero <1984>. "Silicon Photonics Integrated Circuits for Flexible Optical Systems." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2014. http://amsdottorato.unibo.it/6507/.
Abstract:
This dissertation deals with the design and the characterization of novel reconfigurable silicon-on-insulator (SOI) devices to filter and route optical signals on-chip. Design is carried out through circuit simulations based on basic circuit elements (Building Blocks, BBs) in order to prove the feasibility of an approach allowing to move the design of Photonic Integrated Circuits (PICs) toward the system level.
CMOS compatibility and large integration scale make SOI one of the most promising material to realize PICs. The concepts of generic foundry and BB based circuit simulations for the design are emerging as a solution to reduce the costs and increase the circuit complexity.
To validate the BB based approach, the development of some of the most important BBs is performed first. A novel tunable coupler is also presented and it is demonstrated to be a valuable alternative to the known solutions.
Two novel multi-element PICs are then analysed: a narrow linewidth single mode resonator and a passband filter with widely tunable bandwidth. Extensive circuit simulations are carried out to determine their performance, taking into account fabrication tolerances.
The first PIC is based on two Grating Assisted Couplers in a ring resonator (RR) configuration. It is shown that a trade-off between performance, resonance bandwidth and device footprint has to be performed. The device could be employed to realize reconfigurable add-drop de/multiplexers. Sensitivity with respect to fabrication tolerances and spurious effects is however observed.
The second PIC is based on an unbalanced Mach-Zehnder interferometer loaded with two RRs. Overall good performance and robustness to fabrication tolerances and nonlinear effects have confirmed its applicability for the realization of flexible optical systems.
Simulated and measured devices behaviour is shown to be in agreement thus demonstrating the viability of a BB based approach to the design of complex PICs.
10
Yang, Wenjian. "Microwave Photonics and Sensing based on Silicon Photonics." Thesis, University of Sydney, 2020. https://hdl.handle.net/2123/23482.
Abstract:
Chip scale photonic integrated circuits can provide important new functions in communications, signal processing and sensing. Recent research on microwave photonics (MWPs) and integrated optical sensors using the silicon photonic devices has opened up new opportunities for signal processing and sensing applications. MWPs brings together the world of microwave engineering and optoelectronics, which provides solutions for processing high frequency microwave signals. It has attracted significant interest in many different areas including communications, sensors, radar systems and defence applications. The use of photonic integrated circuit enhances functionalities and flexibilities as well as enabling a reduction of size and weight for MWP applications. The high integratablity of the photonic circuit not only boosts the filtering, time delay and phase shifting functionalities, but also enables the sensing applications in the nano-scale range. Integrated sensors are under high demand in many environmental chemical and biomedical applications. The mass fabricated integrated sensor provides opportunities for multi-functional sensor array with minimized volume. The research work presented in this thesis aims to investigate silicon photonics applications in MWP signal processing and different sensing circumstances. Firstly, the MWP filter based on the SOI microring resonator with phase compensation method is demonstrated. In addition, instantaneous frequency measurement based on frequency to time mapping is presented. Then, a novel integrated optical sensor system based on SOI add drop microring resonator structure is presented. The MWP techniques for high performance sensing application is explored. Lastly, to address the multi-functionality of silicon photonics based sensor, an application of integrated ultrasound optical sensor is demonstrated. It is expected the work provided in this thesis can assist in the emergence of real-world silicon photonic applications. (1992 out of 2000 characters)
11
Pérez, López Daniel. "Integrated Microwave Photonic Processors using Waveguide Mesh Cores." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/91232.
Abstract:
Integrated microwave photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint and cost. Application Specific Photonic Integrated Circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long-development times and costly implementations.
A different approach inspired by electronic Field Programmable Gate Arrays is the programmable Microwave Photonic processor, where a common hardware implemented by the combination of microwave, photonic and electronic subsystems, realizes different functionalities through programming. Here, we propose the first-ever generic-purpose Microwave Photonic processor concept and architecture. This versatile processor requires a powerful end-to-end field-based analytical model to optimally configure all their subsystems as well as to evaluate their performance in terms of the radiofrequency gain, noise and dynamic range. Therefore, we develop a generic model for integrated Microwave Photonics systems. The key element of the processor is the reconfigurable optical core. It requires high flexibility and versatility to enable reconfigurable interconnections between subsystems as well as the synthesis of photonic integrated circuits. For this element, we focus on a 2-dimensional photonic waveguide mesh based on the interconnection of tunable couplers. Within the framework of this Thesis, we have proposed two novel interconnection schemes, aiming for a mesh design with a high level of versatility. Focusing on the hexagonal waveguide mesh, we explore the synthesis of a high variety of photonic integrated circuits and particular Microwave Photonics applications that can potentially be performed on a single hardware. In addition, we report the first-ever demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate a world-record number of functionalities on a single photonic integrated circuit enabling over 30 different functionalities from the 100 that could be potentially obtained with a simple seven hexagonal cell structure. The resulting device can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks as well as quantum information systems. Our work is an important step towards this paradigm and sets the base for a new era of generic-purpose photonic integrated systems.Los dispositivos integrados de fotónica de microondas ofrecen soluciones optimizadas para los sistemas de información y comunicación. Generalmente, están compuestos por diferentes arquitecturas en las que subsistemas ópticos y electrónicos se integran para optimizar las prestaciones, el consumo, el tamaño y el coste del dispositivo final. Hasta ahora, los circuitos/chips de propósito específico se han diseñado para proporcionar una funcionalidad concreta, requiriendo así un número considerable de iteraciones entre las etapas de diseño, fabricación y medida, que origina tiempos de desarrollo largos y costes demasiado elevados. Una alternativa, inspirada por las FPGA (del inglés Field Programmable Gate Array), es el procesador fotónico programable. Este dispositivo combina la integración de subsistemas de microondas, ópticos y electrónicos para realizar, mediante la programación de los mismos y sus interconexiones, diferentes funcionalidades. En este trabajo, proponemos por primera vez el concepto del procesador de propósito general, así como su arquitectura. Además, con el fin de diseñar, optimizar y evaluar las prestaciones básicas del dispositivo, hemos desarrollado un modelo analítico extremo a extremo basado en las componentes del campo electromagnético. El modelo desarrollado proporciona como resultado la ganancia, el ruido y el rango dinámico global para distintas configuraciones de modulación y detección, en función de los subsistemas y su configuración. El elemento principal del procesador es su núcleo óptico reconfigurable. Éste requiere un alto grado de flexibilidad y versatilidad para reconfigurar las interconexiones entre los distintos subsistemas y para sintetizar los circuitos para el procesado óptico. Para este subsistema, proponemos el diseño de guías de onda reconfigurables para la creación de mallados bidimensionales. En el marco de esta tesis, hemos propuesto dos nuevos nodos de interconexión óptica para mallas reconfigurables, con el objetivo de obtener un mayor grado de versatilidad. Una vez escogida la malla hexagonal para el núcleo del procesador, hemos analizado la configuración de un gran número de circuitos fotónicos integrados y de funcionalidades de fotónica de microondas. El trabajo se ha completado con la demonstración de la primera malla reconfigurable integrada en un chip de silicio, demostrando además la síntesis de 30 de las 100 funcionalidades que potencialmente se pueden obtener con la malla diseñada compuesta de 7 celdas hexagonales. Este hecho supone un record frente a los sistemas de propósito específico. El sistema puede aplicarse en diferentes campos como las comunicaciones, los sensores químicos y biomédicos, el procesado de señales, la gestión y procesamiento de redes y los sistemas de información cuánticos. El conjunto del trabajo realizado representa un paso importante en la evolución de este paradigma, y sienta las bases para una nueva era de dispositivos fotónicos de propósito general.
Els dispositius integrats de Fotònica de Microones oferixen solucions optimitzades per als sistemes d'informació i comunicació. Generalment, estan compostos per diferents arquitectures en què subsistemes òptics i electrònics s'integren per a optimitzar les prestacions, el consum, la grandària i el cost del dispositiu final. Fins ara, els circuits/xips de propòsit específic s'han dissenyat per a proporcionar una funcionalitat concreta, requerint així un nombre considerable d'iteracions entre les etapes de disseny, fabricació i mesura, que origina temps de desenrotllament llargs i costos massa elevats. Una alternativa, inspirada per les FPGA (de l'anglés Field Programmable Gate Array), és el processador fotònic programable. Este dispositiu combina la integració de subsistemes de microones, òptics i electrònics per a realitzar, per mitjà de la programació dels mateixos i les seues interconnexions, diferents funcionalitats. En este treball proposem per primera vegada el concepte del processador de propòsit general, així com la seua arquitectura. A més, a fi de dissenyar, optimitzar i avaluar les prestacions bàsiques del dispositiu, hem desenrotllat un model analític extrem a extrem basat en els components del camp electromagnètic. El model desenrotllat proporciona com resultat el guany, el soroll i el rang dinàmic global per a distintes configuracions de modulació i detecció, en funció dels subsistemes i la seua configuració. L'element principal del processador és el seu nucli òptic reconfigurable. Este requerix un alt grau de flexibilitat i versatilitat per a reconfigurar les interconnexions entre els distints subsistemes i per a sintetitzar els circuits per al processat òptic. Per a este subsistema, proposem el disseny de guies d'onda reconfigurables per a la creació de mallats bidimensionals. En el marc d'esta tesi, hem proposat dos nous nodes d'interconnexió òptica per a malles reconfigurables, amb l'objectiu d'obtindre un major grau de versatilitat. Una vegada triada la malla hexagonal per al nucli del processador, hem analitzat la configuració d'un gran nombre de circuits fotónicos integrats i de funcionalitats de fotónica de microones. El treball s'ha completat amb la demostració de la primera malla reconfigurable integrada en un xip de silici, demostrant a més la síntesi de 30 de les 100 funcionalitats que potencialment es poden obtindre amb la malla dissenyada composta de 7 cèl·lules hexagonals. Este fet suposa un rècord enfront dels sistemes de propòsit específic. El sistema pot aplicarse en diferents camps com les comunicacions, els sensors químics i biomèdics, el processat de senyals, la gestió i processament de xarxes i els sistemes d'informació quàntics. El conjunt del treball realitzat representa un pas important en l'evolució d'este paradigma, i assenta les bases per a una nova era de dispositius fotónicos de propòsit general.
Pérez López, D. (2017). Integrated Microwave Photonic Processors using Waveguide Mesh Cores [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/91232
TESIS
12
Marinins, Aleksandrs. "Polymer Components for Photonic Integrated Circuits." Doctoral thesis, KTH, Skolan för teknikvetenskap (SCI), 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-219556.
Abstract:
Optical polymers are a subject of research and industry implementation for many decades. Optical polymers are inexpensive, easy to process and flexible enough to meet a broad range of application-specific requirements. These advantages allow a development of cost-efficient polymer photonic integrated circuits for on-chip optical communications. However, low refractive index contrast between core and cladding limits light confinement in a core and, consequently, integrated polymer device miniaturization. Also, polymers lack active functionality like light emission, amplification, modulation, etc. In this work, we improved a performance of integrated polymer waveguides and demonstrated active waveguide devices. Also, we present novel Si QD/polymer optical materials. In the integrated device part, we demonstrate optical waveguides with enhanced performance. Decreased radiation losses in air-suspended curved waveguides allow low-loss bending with radii of only 15 µm, which is far better than >100 µm for typical polymer waveguides. Another study shows a positive effect of thermal treatment on acrylate waveguides. By heating higher than polymer glass transition temperature, surface roughness is reflown, minimizing scattering losses. This treatment method enhances microring resonator Q factor more than 2 times. We also fabricated and evaluated all-optical intensity modulator based on PMMA waveguides doped with Si QDs. We developed novel hybrid optical materials. Si QDs are encapsulated into PMMA and OSTE polymers. Obtained materials show stable photoluminescence with high quantum yield. We achieved the highest up to date ~65% QY for solid-state Si QD composites. Demonstrated materials are a step towards Si light sources and active devices. Integrated devices and materials presented in this work enhance the performance and expand functionality of polymer PICs. The components described here can also serve as building blocks for on-chip sensing applications, microfluidics, etc.QC 20171207
13
Wasley, Nicholas Andrew. "Nano-photonics in III-V semiconductors for integrated quantum optical circuits." Thesis, University of Sheffield, 2013. http://etheses.whiterose.ac.uk/3993/.
Abstract:
This thesis describes the optical spectroscopic measurements of III-V semiconductors used to investigate a number of issues related to the development of integrated quantum optical circuits. The disorder-limited propagation of photons in photonic crystal waveguides in the slow-light regime is investigated. The analysis of Fabry-Perot resonances is used to map the mode dispersion and extract the photon localisation length. Andersonlocalised modes are observed at high group indices, when the localisation lengths are shorter than the waveguide lengths, consistent with the Fabry-Perot analysis. A spin-photon interface based on two orthogonal waveguides is introduced, where the polarisation emitted by a quantum dot is mapped to a path-encoded photon. Operation is demonstrated by deducing the spin using the interference of in-plane photons. A second device directly maps right and left circular polarisations to anti-parallel waveguides, surprising for a non-chiral structure but consistent with an off-centre dot. Two dimensional photonic crystal cavities in GaInP and full control over the spontaneous emission rate of InP quantum dots is demonstrated by spectrally tuning the exciton emission energy into resonance with the fundamental cavity mode. Fourier transform spectroscopy is used to investigate the short coherence times of InP quantum dots in GaInP photonic crystal cavities. Additional technological developments are also presented including a quantum dot registration technique, electrical tuning of quantum dot emission and uniaxial strain tuning of H1 cavity modes.
14
Klinner-Teo, Teresa Deyi Maria. "Photonic circuits for exoplanet detection." Thesis, The University of Sydney, 2022. https://hdl.handle.net/2123/29765.
Abstract:
The compelling scientific rewards for exoplanet detection in astronomy necessitates the development of imaging techniques able to explore parts of the parameter space unreachable by indirect methods: isolating planetary light for further investigation. Nulling interferometry is one of the most promising technologies for imaging exoplanets within stellar habitable zones. The Guided-Light Interferometric Nulling Technology (GLINT) instrument, the first multi-baseline photonic nulling interferometer, has explored the potential for photonics to deliver the performance to reach the realms of contrast and separation required for exoplanet detection in the near-infrared. GLINT highlights two key issues that limit current-generation photonic nullers: residual phase variations and chromaticity within the beam combiner. Both limitations are addressed by the use of tricouplers, which can deliver a broadband, achromatic null together with phase measurements for fringe tracking.
This thesis gives a derivation of the interactions of the tricoupler as the nuller’s core element, and presents designs for two devices to cancel on-axis light achromatically. A fully symmetric tricoupler is introduced, allowing a null signal to be delivered together with baseline-phase-dependent splitting into a pair of bright channels. Within some design trade space, the science signal or the fringe tracking ability can be prioritised. A phase shifter is also presented here, which can induce a phase shift of 180° with a variation of 0.6° in the 1.4-1.7μm band, producing a near-achromatic differential phase between beams. This functionality is required for optimal operation of the tricoupler nulling stage. Both devices can be integrated and replicated on a single photonic chip using ultrafast laser inscription, and can deliver a deep, broadband null together with a real-time fringe phase metrology signal.
15
Sánchez, Diana Luis David. "High performance photonic devices for switching applications in silicon photonics." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/77150.
Abstract:
El silicio es la plataforma más prometedora para la integración fotónica, asegurando la compatibilidad con los procesos de fabricación CMOS y la producción en masa de dispositivos a bajo coste. Durante las últimas décadas, la tecnología fotónica basada en la plataforma de silicio ha mostrado un gran crecimiento, desarrollando diferentes tipos de dispositivos ópticos de alto rendimiento.
Una de las posibilidades para continuar mejorando las prestaciones de los dispositivos fotónicos es mediante la combinación con otras tecnologías como la plasmónica o con nuevos materiales con propiedades excepcionales y compatibilidad CMOS. Las tecnologías híbridas pueden superar las limitaciones de la tecnología de silicio, dando lugar a nuevos dispositivos capaces de superar las prestaciones de sus homólogos electrónicos. La tecnología híbrida dióxido de vanadio/ silicio permite el desarrollo de dispositivos de altas prestaciones, con gran ancho de banda, mayor velocidad de operación y mayor eficiencia energética con dimensiones de la escala de la longitud de onda.
El objetivo principal de esta tesis ha sido la propuesta y desarrollo de dispositivos fotónicos de altas prestaciones para aplicaciones de conmutación. En este contexto, diferentes estructuras basadas en silicio, tecnología plasmónica y las propiedades sintonizables del dióxido de vanadio han sido investigadas para controlar la polarización de la luz y para desarrollar otras funcionalidades electro-ópticas como la modulación.Silicon is the most promising platform for photonic integration, ensuring CMOS fabrication compatibility and mass production of cost-effective devices. During the last decades, photonic technology based on the Silicon on Insulator (SOI) platform has shown a great evolution, developing different sorts of high performance optical devices. One way to continue improving the performance of photonic optical devices is the combination of the silicon platform with another technologies like plasmonics or CMOS compatible materials with unique properties. Hybrid technologies can overcome the current limits of the silicon technology and develop new devices exceeding the performance metrics of its counterparts electronic devices. The vanadium dioxide/silicon hybrid technology allows the development of new high-performance devices with broadband performance, faster operating speed and energy efficient optical response with wavelength-scale device dimensions. The main goal of this thesis has been the proposal and development of high performance photonic devices for switching applications. In this context, different structures, based on silicon, plasmonics and the tunable properties of vanadium dioxide, have been investigated to control the polarization of light and for enabling other electro-optical functionalities, like optical modulation.
El silici és la plataforma més prometedora per a la integració fotònica, assegurant la compatibilitat amb els processos de fabricació CMOS i la producció en massa de dispositius a baix cost. Durant les últimes dècades, la tecnologia fotònica basada en la plataforma de silici ha mostrat un gran creixement, desenvolupant diferents tipus de dispositius òptics d'alt rendiment. Una de les possibilitats per a continuar millorant el rendiment dels dispositius fotònics és per mitjà de la combinació amb altres tecnologies com la plasmònica o amb nous materials amb propietats excepcionals i compatibilitat CMOS. Les tecnologies híbrides poden superar les limitacions de la tecnologia de silici, donant lloc a nous dispositius capaços de superar el rendiment dels seus homòlegs electrònics. La tecnologia híbrida diòxid de vanadi/silici permet el desenvolupament de dispositius d'alt rendiment, amb gran ample de banda, major velocitat d'operació i major eficiència energètica en l'escala de la longitud d'ona. L'objectiu principal d'esta tesi ha sigut la proposta i desenvolupament de dispositius fotònics d'alt rendiment per a aplicacions de commutació. En este context, diferents estructures basades en silici, tecnologia plasmònica i les propietats sintonitzables del diòxid de vanadi han sigut investigades per a controlar la polarització de la llum i per a desenvolupar altres funcionalitats electró-òptiques com la modulació.
Sánchez Diana, LD. (2016). High performance photonic devices for switching applications in silicon photonics [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/77150
TESIS
16
Anderson, Troy P. "Fabrication of integrated optofluidic circuits in chalcogenide glass using femtosecond laser direct writing." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4579.
Abstract:
Femtosecond laser direct writing (FLDW) is a versatile process that uses focused femtosecond pulses to modify the physical structure of a material, which can result in a shift of optical properties such as the linear and nonlinear refractive index. If the photon energy of the femtosecond pulses lies below the material bandgap, nonlinear absorption rather than linear absorption becomes the dominant mechanism of energy transfer to the material. In this manner, a focused femtosecond pulse train can be used to fabricate functional features such as optical waveguides, diffractive optical elements, or micro-fluidic elements within the volume of a transparent medium. In this dissertation, the utility of femtosecond laser processing as a fabrication technique of optical and micro-fluidic elements in chalcogenide glasses is explored. The photo-induced modifications of optical and chemical parameters of new germanium-based Chalcogenide glasses in both bulk and thin-film form are characterized for the first time and the impact of material composition and laser fabrication parameters are discussed. The glasses are found to display an increase in volume, a decrease of the linear optical refractive index, and an increase of the nonlinear refractive index when exposed to femtosecond laser pulses. A model based on avalanche ionization and multi-photon ionization is used to describe the highly nonlinear absorption of laser light in the material and correlate the photo-induced modifications to the electron density generated during irradiation. The magnitude of the induced photo-modification is shown to be dependent on laser parameters such as laser dose and repetition rate. The fabrication of microfluidic elements through both direct ablation and the preferential etching of photo-modified regions is also explored. Finally, the integration of both optical elements and fluidic elements fabricated by FLDW into a single substrate is discussed.ID: 028916651; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2010.; Includes bibliographical references (p. 181-194).
Ph.D.
Doctorate
Optics
17
Liu, Qiankun. "SiGe photonic integrated circuits for mid-infrared sensing applications." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS166/document.
Abstract:
La spectroscopie dans le moyen-infrarouge est une méthode universelle pour identifier les substances chimiques et biologiques, car la plupart des molécules ont leurs résonances de vibration et de rotation dans cette plage de longueurs d'onde. Les systèmes moyen infrarouge disponibles dans le commerce reposent sur des équipements volumineux et coûteux, tandis que de nombreux efforts sont maintenant consacrés à la réduction de leur taille et leur intégration sur circuits intégrés. L’utilisation de la technologie silicium pour la réalisation de circuits photoniques dans le moyen-infrarouge présente de nombreux avantages: fabrication fiable, à grand volume, et réalisation de circuits photoniques à hautes performances, compacts, légers et à faible consommation énergétique. Ces avantages sont particulièrement intéressant pour les systèmes de détection spectroscopique moyen infrarouge, qui besoin d'être portable et à faible coût. Parmi les différents matériaux disponibles en photonique silicium, les alliages silicium-germanium (SiGe) à forte concentration en Ge sont particulièrement intéressants en raison de la grande fenêtre de transparence du Ge, pouvant atteindre 15 µm. Dans ce contexte, l'objectif de cette thèse est d'étudier une nouvelle plate-forme SiGe à forte concentration en Ge, pour la démonstration de circuits photoniques moyen infra rouge. Cette nouvelle plate-forme devrait bénéficier d'une large gamme de transparence en longueurs d'onde de transparence et de la possibilité d’ajuster les propriétés des guides optiques (indice effectif, dispersion,…). Au cours de cette thèse, différentes plates-formes basées sur différents profils graduels du guide d’onde ont été étudiées. Tout d'abord, il a été démontré qu’il était possible d’obtenir des guides présentant de faibles pertes optiques inférieures à 3 dB/cm dans une large plage de longueurs d'onde, de 5,5 à 8,5 µm. Une preuve de concept de détection de molécules, basée sur l'absorption de la partie évanescent du mode optique a ensuite été démontrée. Ensuite, les composants formant les briques de base classiques de la photonique intégrée ont été étudiés. Les premières cavités intégrées ont été réalisées à 8 µm. Deux configurations ont été étudiées : des cavité Fabry-Perot utilisant des miroirs de Bragg intégrés dans les guides d’onde et des résonateurs en anneau. Un spectromètre à transformée de Fourier fonctionnant sur une large bande spectrale, et pour les deux polarisations de la lumière a également été démontré. Tous ces résultats reposent sur la conception des matériaux et des composants, la fabrication en salle blanche et la caractérisation expérimentale. Ce travail a été effectué dans le cadre du projet européen INsPIRE en collaboration avec le Pr. Giovanni Isella de Politecnico Di MilanoMid-infrared (mid-IR) spectroscopy is a nearly universal way to identify chemical and biological substances, as most of the molecules have their vibrational and rotational resonances in the mid-IR wavelength range. Commercially available mid-IR systems are based on bulky and expensive equipment, while lots of efforts are now devoted to the reduction of their size down to chip-scale dimensions. The use of silicon photonics for the demonstration of mid-IR photonic circuits will benefit from reliable and high-volume fabrication to offer high performance, low cost, compact, lightweight and power consumption photonic circuits, which is particularly interesting for mid-IR spectroscopic sensing systems that need to be portable and low cost. Among the different materials available in silicon photonics, Germanium (Ge) and Silicon-Germanium (SiGe) alloys with a high Ge concentration are particularly interesting because of the wide transparency window of Ge up to 15 µm. In this context, the objective of this thesis is to investigate a new Ge-rich graded SiGe platform for mid-IR photonic circuits. Such new plateform was expected to benefit from a wide transparency wavelength range and a high versatility in terms of optical engineering (effective index, dispersion, …). During this thesis, different waveguides platforms based on different graded profiles have been investigated. First it has been shown that waveguides with low optical losses of less than 3 dB/cm can be obtained in a wide wavelength range, from 5.5 to 8.5 µm. A proof of concept of sensing based on the absorption of the evanescent component of the optical mode has then been demonstrated. Finally, elementary building blocs have been investigated. The first Bragg mirror-based Fabry Perot cavities and racetrack resonators have been demonstrated around 8 µm wavelength. A broadband dual-polarization MIR integrated spatial heterodyne Fourier-Transform spectrometer has also been obtained. All these results rely on material and device design, clean-room fabrication and experimental characterization. This work was done in the Framework of EU project INsPIRE in collaboration with Pr. Giovanni Isella from Politecnico Di Milano
18
Ho, Tony Yatming. "Non-Reciprocal Wave Transmission in Integrated Waveguide Array Isolators." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5302.
Abstract:
Non-reciprocal wave transmission is a phenomenon witnessed in certain photonic devices when the wave propagation dynamics through the device along one direction differs greatly from the dynamics along the counter-propagating direction. Specifically, it refers to significant power transfer occurring in one direction, and greatly reduced power transfer in the opposite direction. The resulting effect is to isolate the directionality of wave propagation, allowing transmission to occur along one direction only. Given the popularity of photonic integrated circuits (PIC), in which all the optical components are fabricated on the same chip so that the entire optical system can be made more compact, it is desirable to have an easily integrated optical isolator. Common free-space optical isolator designs, which rely on the Faraday effect, are limited by the availability of suitable magnetic materials. This research proposes a novel integrated optical isolator based on an array of closely spaced, identical waveguides. Because of the nonlinear optical properties of the material, this device exploits the differing behaviors of such an array when illuminated with either a high power or a low power beam to achieve non-reciprocal wave transmission in the forwards and backwards directions, respectively. The switching can be controlled electro-optically via an integrated gain section which provides optical amplification before the input to the array. The design, fabrication, characterization and testing of this optical isolator are covered in this dissertation. We study the switching dynamics of this device and present its optimum operating conditions. ?ID: 031001286; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Adviser: Patrick LiKamWa.; Title from PDF title page (viewed February 26, 2013).; Thesis (Ph.D.)--University of Central Florida, 2012.; Includes bibliographical references (p. 103-110).
Ph.D.
Doctorate
Optics and Photonics
Optics and Photonics
Optics
19
Remis, Janez Andres. "Integration of mid-infrared lasers on silicon photonic integrated circuits." Electronic Thesis or Diss., Université de Montpellier (2022-....), 2023. http://www.theses.fr/2023UMONS041.
Abstract:
La photonique silicium (Si) est apparue comme l'une des technologies les plus prometteuses pour réaliser des puces photoniques ultra-denses, grâce à la maturité de l'industrie du Si, à la grande taille des wafers et aux propriétés optiques du Si et des matériaux connexes. L'un des principaux défis qui restent à relever est l'intégration de sources lasers à haute performance sur Si. En particulier, les lasers à semi-conducteurs III-V sont très efficaces et leur intégration monolithique sur Si, c'est-à-dire l'intégration directe par épitaxie, est considérée comme la voie la plus prometteuse vers la fabrication de puces photoniques Si à faible coût et à grande échelle. Parmi les diverses applications de la photonique Si, la détection optique dans le moyen infrarouge est très demandée pour des applications sociétales, environnementales ou médicales, entre autres. Les lasers à base de GaSb sont apparus comme une technologie capable de couvrir la gamme du moyen infrarouge. L'objectif de ma thèse est l'intégration diode lasers à base de GaSb sur des circuits photoniques intégrés Si (PIC). A cette fin, j'ai d'abord étudié la dégradation de la performance du laser causée par des dislocations provenant de la croissance épitaxiale III-V-sur-Si. Ensuite, j'ai démontré la fabrication de ces lasers sur un PIC Si avec des performances similaires à celles des lasers discrets sur Si. En outre, le couplage de lumière entre les lasers et des guides d'ondes à base de SiN a été démontré. Enfin, j'ai étudié des nouvelles approches pour augmenter l'efficacité du couplage. J'ai développé le process de fabrication d'une nouvelle approche prometteuse qui ouvre la voie à d'autres recherches visant à atteindre des efficacités de couplage élevées. Dans l'ensemble, ces résultats représentent une étape importante vers l'intégration monolithique de lasers sur des PICs Si pour des capteurs dans le moyen infrarouge compacts et économiquesSilicon (Si) photonics has emerged as one of the most promising technologies for the realization of ultra-dense photonic chips thanks to the mature Si industry, the large wafer size and the optical properties of Si and related materials. One of the major remaining challenges is the integration of high-performance light sources on Si. In particular, III-V semiconductor lasers are very efficient and their monolithic integration on Si, i.e. direct integration via epitaxy, is considered the most promising route to low-cost and large-scale fabrication of Si photonic chips. Among the various applications of Si photonics, optical sensing in the mid-IR is in high demand for societal, environmental or medical applications, among others. GaSb-based lasers have emerged as a technology capable of covering the mid-IR wavelength range. Therefore, the objective of my thesis is to integrate GaSb-based diode lasers on Si photonic integrated circuits (PICs). To this aim, I first investigated the degradation of laser performance caused by threading dislocations arising from the III-V-on-Si epitaxial growth. I then demonstrated the fabrication of these lasers on a Si PIC with similar performance to that of discrete lasers on Si. In addition, light coupling between the lasers and SiN-based waveguides was demonstrated. Finally, I investigated alternative approaches to increase the coupling efficiency. I developed the fabrication process of a new promising approach which paves the way for further investigations aimed at achieving high coupling efficiencies. Altogether, these results represent a significant step towards the monolithic integration of lasers on Si PICs for cost-effective and compact mid-IR sensors
20
Ladele, Emmanuel Olufemi. "Vector Finite Element Optimisation Of Compact Spot-size Converters In Photonics Integrated Circuits." Thesis, City University London, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492171.
Abstract:
It is well known that one of the major problems of integrated optical systems is the efficient coupling of photonic devices such as semiconductor lasers, amplifiers, modulators, or switches to a single mode fiber (SMF) in such a way that little Or no power loss occurs. A well confined beam is needed in order to optimize the performance of a wide range of these photonic devices, because up to 90% of the optical power can be lost due to a large mismatch between their small non-circular spot-size and a SMF with a larger and Circular spot-size when they are butt-coupled. Over the last 10 years several attempts have been made to close the gap and reduce such a high loss when coupling a photonic integrated circuit (PIC) to SMF. Among these is the use of a microlens or lensed fiber to enhance the coupling efficiency. However, the disadvantage of this approach is that associated sub-micron alignment tolerances lead to very high packaging costs. For a small business network, such a large cost is preventing the rapid extension of fiber-to-the-home (FITH). This makes the problem of optical coupling a big challenge to optoelectronics researchers worldwide 'as huge efforts were made to exp~nd the narrow ,spot-size within a PIC, such that efficient coupling to a SMF with a large spot-size can be made. Monolithically integrated spot-size converters (SSCs) have been reported recently as being used to enhance optical coupling without deteriorating alignment tolerances and majority of the expanded SSCs do incorporate tapered structures, operating very close to the modal cut-off, to expand their spot-size. In this thesis, some compact SSC designs have been carried out using the twin rib (TR), multimode interference (MMI) and silicon-on-insulator (SOl) waveguides to improve the coupling efficiency. The TR and SOl do require a tapered section in their mode of operation to expand the spot-size whereas the MMI does not need a tapered section. Some numerical techniques have been employed in this thesis as tools in the design, analysis and optimization of the above guided-wave photonics devices. The robust, versatile and accurate full-vector finite element method (FVFEM) is the backbone of all the numerical techniques, as it has been used to obtain the modal solutions of the waveguide sections of the photonic devices throughout this thesis. The FVFEM has been used in conjunction with the Least squares boundary residual (LSBR) method in the novel compact design, analysis and optimisation of 3-Core multimode waveguide as a device for improving power coupling efficiency. The transmission and reflection coefficients of the guided-waves are obtained as well. In a similar manner, the FVFEM is also used in conjunction with the finite element-based full-vector beam propagation method (FVBPM) to study the propagation of the guided-waves along the longitudinal z-direction of tapered devices for the TR and SOl waveguides. In the analysis, the propagating power, the radiation loss and the spot-size are obtained for these PICs. Tapered spot-size converters, with various highindex SOl waveguides, which consists of secondary polymeric cover, are investigated in this work. Mode beating phenomenon was observed and explained. Also the lmcharacterisation Sal was carried in this work because of the high-index contrast of the Sal materials which is a vital information for any design Engineer since the operations depend heavily on the materials as well as the geometry of the device.The robust PML boundary conditions have been used to stem down unwanted radiations during propagation and the Pade approximation has been employed to take care of the waves propagating at wide angles to the z-axis. The incorporated popular overlap integral (01) has been used in the determination of the coupling efficiency of the devices, which in the case ofTR is 95%, and Sal is 99.25%.
21
Dainese, Matteo. "Plasma assisted technology for Si-based photonic integrated circuits." Doctoral thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-148.
22
Koompai, Natnicha. "Mid-IR SiGe photonics circuit for sensing application." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPAST027.
Abstract:
Le développement de circuits intégrés photoniques fonctionnant dans le moyen infrarouge voit un développement considérable en raison de leurs applications pour l'identification de substances chimiques et biologiques. Les systèmes actuels commerciaux fonctionnant dans le moyen infrarouge reposent sur des équipements volumineux et coûteux. Beaucoup de travaux sont consacrés à la réduction de la taille de ces systèmes à des dimensions de l'ordre de celles d'un circuit intégré. L'utilisation de la photonique sur silicium pour la réalisation de circuits intégrés dans le moyen infrarouge offre de grands avantages en termes de compacité, de hautes performances et de coût. Un point clé pour le développement d'une application réelle est de pouvoir coupler la source de lumière infrarouge moyen avec les circuits photoniques de manière compacte. Dans ce contexte, l'objectif principal de cette thèse s'est concentré sur deux défis différents : (i) progrès vers l'intégration de QCL avec des circuits photoniques SiGe (ii) contribution au développement de dispositifs photoniques SiGe par le développement de résonateurs à fort facteur de qualité, fonctionnant autour d'une longueur d'onde de 8 µm. Ces travaux ont ouvert la voie au développement futur de circuits photoniques intégrés sur puce dans le moyen infrarougeThere is currently a growing interest in the developement of mid-infrared photonics integrated circuits driven by their unique features and potential to identify chemical and biological substances. Commercially available mid-infrared systems currently rely on bulky and expensive equipment. Substantial efforts are devoted to downsizing mid-infrared systems to chip-scale dimensions. The use of silicon photonics for the demonstration of mid-IR integrated circuits offers great advantages in terms of compactness, high-performance, and cost-effective sensing systems. A key point for development of real application is to be able to couple the mid-infrared light source with the photonics circuits in a compact way. In this context, the main objective of this thesis has been focused on two different challenges: (i) progress towards the integration of QCL with SiGe photonics circuits in the mid-IR range (ii) contribution to the development of SiGe photonics devices by the development of high-quality factor resonators operating around 8 µm wavelength. This work has opened the route for future development of on-chip integrated photonics circuit in the mid-IR
23
Gutiérrez, Campo Ana María. "Development of integrated silicon photonics modulation devices for digital and analog applications." Doctoral thesis, Universitat Politècnica de València, 2013. http://hdl.handle.net/10251/33330.
Abstract:
Silicon photonics is one of the most exciting and fastest growing photonic technologies
in recent years. The salient feature of this technology is its compatibility with the
mature silicon IC manufacturing based on complementary metal-oxide semiconductor
(CMOS) processes widely used in microelectronic industry. Another motivation is the
availability of high-quality silicon-on-insulator (SOI) planar waveguide circuits that
offer strong optical confinement due to the high index contrast between silicon (n=3.45)
and SiO2 (n=1.45). This opens up miniaturization and very large scale integration of
photonic devices allowing photonic integrated circuits for a wide range of applications
and markets, from optical telecommunications to bio-photonic devices or precise fibre
sensors. Optical modulators are key building-blocks for high speed signal transmission
and information processing in any photonic interconnection solution. The work
developed in this thesis, as part of the objectives of the European project HELIOS in
which it is framed, is essentially focused on realizing compact and efficient modulators
integrated on silicon chips.
The thesis consists of three main chapters as well as the concluding section on the
work accomplished. Chapter one is aimed at giving a general description of the benefits
of using silicon photonics, showing its challenges and opportunities as well as at giving
a deeply overview of all issues related to the electro-optic modulation. Chapter two is
devoted to develop silicon modulators with high features for digital applications.
Specifically, new optical structures different to the conventional ones are presented with
the aim of enhancing the modulation performance or at least several critical parameters
in the modulation. Chapter three is dedicated to the analog applications. The concept of
microwave photonics is described as well as different researches carried out in the
analog scope for application in the field of integrated microwave photonics, all of them
using CMOS-compatible electro-optic silicon modulators which validate the potential of
silicon photonics as a promising approach for enabling the development of integrated
microwave photonics applications. Finally, conclusions on the work realized are
provided in Chapter 4.La fotónica de silicio es una de las tecnologías fotónicas que está experimentando un crecimiento más excitante y rápido en los últimos años. La característica más destacada de esta tecnología es su compatibilidad con las maduras técnicas de fabricación de circuitos integrados de silicio basadas en los procesos ¿complementary metal-oxide semiconductor¿ (CMOS) ampliamente utilizados en la industria microelectrónica. Otra motivación es la disponibilidad de circuitos de guía de ondas planas de silicio sobre aislante (SOI) de alta calidad que ofrecen un fuerte confinamiento óptico debido al alto contraste índices entre el silicio (n=3,45) y el SiO2 (n = 1,45). Esto abre las puertas a la miniaturización y a la integración a gran escala de dispositivos fotónicos lo que resulta en circuitos fotónicos integrados para una amplia gama de aplicaciones y mercados, desde telecomunicaciones ópticas a dispositivos bio-fotónicos o sensores de fibra precisos. Los moduladores ópticos son elementos básicos fundamentales para la transmisión de señales a alta velocidad y el procesado de información en cualquier solución de interconexión fotónica. El trabajo desarrollado en esta tesis, como parte del los objetivos del proyecto Europeo HELIOS en el que está enmarcada, se centra fundamentalmente en realizar moduladores compactos y eficientes, integrados en chips de silicio. La tesis consiste en 3 capítulos principales así como una sección de conclusiones del trabajo conseguido. El capítulo uno está destinado a dar una descripción general de los beneficios del uso de la fotónica de silicio, mostrando sus retos y oportunidades, así como a dar una visión profunda de todos los aspectos relacionados con la modulación electro-óptica. El capítulo dos está dedicado a desarrollar moduladores de silicio de altas prestaciones para aplicaciones digitales. Específicamente, se presentan nuevas estructuras ópticas diferentes a las convencionales con el objetivo de mejorar el rendimiento de la modulación o al menos algunos parámetros críticos en la modulación. El tercer capítulo se dedica a las aplicaciones analógicas. Se describe el concepto de la fotónica de microondas, así como diferentes investigaciones llevadas a cabo en el ámbito analógico para su aplicación en el campo de la fotónica integrada de microondas, todas ellas usando moduladores electro-ópticos de silicio compatibles con los procesos de fabricación CMOS, lo que valida el potencial de la fotónica de silicio como un prometedor enfoque para permitir el desarrollo de aplicaciones de la fotónica integrada de microondas. Por último, las conclusiones sobre el trabajo realizado se proporcionan en el Capítulo 4.
Gutiérrez Campo, AM. (2013). Development of integrated silicon photonics modulation devices for digital and analog applications [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/33330
TESIS
24
Sánchez, Fandiño Javier Antonio. "Integrated Optical Filters for Microwave Photonic Applications." Doctoral thesis, Universitat Politècnica de València, 2016. http://hdl.handle.net/10251/67690.
Abstract:
[EN] Microwave photonics (MWP) is a well-established research field that investigates the use of photonic technologies to generate, distribute, process and analyze RF waveforms in the optical domain. Despite its great potential to solve long-standing problems faced by both the microwave and electronics industries, MWP systems are bulky, expensive and consume a lot of power. Integrated microwave photonics (IMWP) is an emerging area of research that promises to alleviate most of these drawbacks through the use of photonic integrated circuits (PIC).
In this work, we have aimed at further closing the gap between the worlds of MWP and integrated optics. In particular, we have focused on the design and experimental characterization of PICs with reconfigurable, ring-assisted Mach-Zehnder interferometer filters (RAMZI), and demonstrated its potential use in different IMWP applications. These filters consist of a symmetric MZI loaded with ring resonators, which are coupled to the MZI branches by different optical couplers.
The contributions of this thesis can be split into two sections. In the first one, we demonstrate integrated optical couplers and reflectors with variable power splitting and reflections ratios. These exploit the well-known properties of tapered multimode interference couplers (MMI), and their inherent robustness makes them highly suitable for the implementation of both RAMZI and reflective filters. Besides, we study in detail the impact of manufacturing deviations in the performance of a 4x4 MMI-based 90º hybrid, which is a fundamental building block in coherent optical communication systems.
In the second section, we demonstrate the use of integrated RAMZI filters for three different IMWP applications, including instantaneous frequency measurement (IFM), direct detection of frequency-modulated signals in a MWP link, as well as in tunable, coherent MWP filters. A theoretical analysis of the limits and trade-offs that exist in photonics-based IFM systems is also provided. Even though these are early proof-of-concept experiments, we hope that further technological developments in the field will finally turn MWP into a commercial reality.[ES] La fotónica de microondas (MWP) es un campo de investigación que estudia el uso de tecnologías ópticas para generar, distribuir, procesar y analizar señales de RF. A pesar de su gran potencial para resolver algunos de los problemas a los que se enfrentan las industrias electrónica y de microondas, estos sistemas son voluminosos, caros y consumen mucha potencia. La fotónica de microondas integrada (IMWP) es un área emergente que promete solucionar todos estos inconvenientes a través de la utilización de circuitos ópticos integrados (PIC). En esta tesis, hemos pretendido avanzar un poco más en el acercamiento entre estas dos disciplinas. En concreto, nos hemos centrado en el diseño y caracterización experimental de PICs con filtros reconfigurables basados en interferómetros Mach-Zehnder cargados con anillos (RAMZI), y demostrado su potencial uso en diferentes aplicaciones de IMWP. Los filtros RAMZI están hecho básicamente de un MZI simétrico cargado con anillos, los cuales a su vez se acoplan a las ramas del interferómetro a través de distintos acopladores ópticos. Las contribuciones de este trabajo se pueden dividir en dos partes. En la primera, hemos demostrado acopladores y reflectores ópticos integrados con coeficientes de acoplo y reflexión variables. Éstos explotan las propiedades de los acopladores por interferencia multimodal (MMI), y su robustez les hace muy atractivos para la implementación de filtros RAMZI y de tipo reflectivo. Además, hemos analizado el impacto que las tolerancias de fabricación tienen en el rendimiento de un híbrido óptico de 90º basado en un MMI 4x4, el cual es un elemento fundamental en los sistemas de comunicaciones ópticas coherentes. En la segunda parte, hemos demostrado el uso de filtros RAMZI en tres aplicaciones distintas de IMWP. En concreto, hemos utilizado dichos filtros para implementar sistemas de medida de frecuencia instantánea (IFM), detección directa de señales moduladas en frecuencia para enlaces fotónicos, así como en filtros coherentes y sintonizables de MWP. También hemos desarrollado un análisis teórico de las limitaciones y problemas que existen en los sistemas IFM. A pesar de que todos los experimentos realizados han consistido en prototipos para una prueba de concepto, esperamos que futuros avances tecnológicos permitan que la fotónica de microondas se convierta algún día en una realidad comercial.
[CAT] La fotònica de microones (MWP) és un camp d'investigació que estudia l'ús de tecnologies òptiques per a generar, distribuir, processar y analitzar senyals de radiofreqüència. A pesar del seu gran potencial per a resoldre alguns dels problemes als que s'enfronten les indústries electrònica i de microones, estos sistemes son voluminosos, cars i consumixen molta potència. La fotònica de microones integrada (IMWP) és un àrea emergent que promet solucionar tots estos inconvenients a través de la utilització de circuits òptics integrats (PIC). En esta tesi, hem pretés avançar un poc més en l'acostament entre estes dos disciplines. En concret, ens hem centrat en el disseny i caracterització experimental de PICs amb filtres reconfigurables basats en interferòmetres Mach-Zehnder carregats amb anells (RAMZI), i demostrat el seu potencial en diferents aplicacions d' IMWP. Els filtres RAMZI estan fets bàsicament d'un MZI simètric carregat amb anells, els quals, al seu torn, s'acoblen a les branques del interferòmetre a través de distints acobladors òptics. Les contribucions d'este treball es poden dividir en dos parts. En la primera, hem demostrat acobladors i reflectors òptics integrats amb coeficients de transmissió i reflexió variables. Estos exploten les propietats dels acobladors per interferència multimodal (MMI), i la seua robustesa els fa molt atractius per a la implementació de filtres RAMZI i de tipo reflectiu. A més a més, hem analitzat l'impacte que les toleràncies de fabricació tenen en el rendiment d'un híbrid òptic de 90 graus basat en un MMI 4x4, el qual és un element fonamental en els sistemes de comunicacions òptiques coherents. En la segona part, hem demostrat l'ús de filtres RAMZI en tres aplicacions diferents de IMWP. En concret, hem utilitzat estos filtres per a implementar sistemes de mesura de freqüència instantània (IFM), detecció directa de senyals modulades en freqüència per a enllaços fotònics, així com en filtres coherents i sintonitzables de MWP. També hem desenvolupat una anàlisi teòrica de les limitacions i problemes que existixen en els sistemes IFM. A pesar de que tots els experiments realitzats han consistit en prototips per a una prova de concepte, esperem que futurs avanços tecnològics permeten que la fotònica de microones es convertisca algun dia en una realitat comercial.
Sánchez Fandiño, JA. (2016). Integrated Optical Filters for Microwave Photonic Applications [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/67690
TESIS
25
Matres, Abril Joaquín. "Ultrafast, CMOS compatible, integrated all optical switching." Doctoral thesis, Universitat Politècnica de València, 2014. http://hdl.handle.net/10251/37984.
Abstract:
El proyecto consistirá en implementar funcionalidades fotónicas avanzadas sobre silicio tales como conmutación ultra rápida o la realización de puertas lógicas todo ópticas. Para ello se emplearán efectos no lineales del silicio basados en el efecto Kerr, producido por el coeficiente no lineal de tercer orden chi(3) .Los dispositivos deberán funcionar al menos a 40Gbps para que sean competitivos con los dispositivos actuales de última generación. También deberán ser compatibles con tecnología CMOS, lo cual es crucial para que la fabricación se pueda realizar a gran escala a precios competitivos.Matres Abril, J. (2014). Ultrafast, CMOS compatible, integrated all optical switching [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/37984
TESIS
26
Feng, Ning-Ning Huang Wei-Ping. "Modeling, simulation and design techniques for high-density complex photonic integrated devices and circuits." *McMaster only, 2005.
27
Tabataba-Vakili, Farsane. "III-nitrides on silicon : a platform for integrated photonics from the ultraviolet to the near-infrared." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPAST014.
Abstract:
Les semi-conducteurs nitrures d’éléments III (AlN, GaN, InN et leurs alliages) sont devenus très importants dans notre vie quotidienne, car ils sont utilisés dans les diodes électroluminescentes blanches, bleues, vertes, et ultraviolettes, ainsi que pour des diodes lasers et l’électronique de puissance et hyperfréquence. Les matériaux nitrures sont fortement polyvalents grâce à leur grande bande interdite directe et accordable de l’ultraviolet jusqu’au visible. Ils donnent accès à une très large gamme d’applications électroniques, optoélectroniques, et photoniques. En photonique, un domaine très prometteur s’appuie sur la plateforme des nitrures d’éléments III sur silicium pour la prochaine génération de circuits photoniques intégrés grâce à sa grande fenêtre de transparence de l’ultraviolet jusqu’au proche infrarouge et la possibilité d’intégration monolithique d’émetteurs actifs comme des puits et boîtes quantiques. Dans cette thèse, nous étudions différents dispositifs photoniques à base de nitrures et leur intégration dans des circuits photoniques actifs et passifs à des longueurs d’onde allant de l’ultraviolet jusqu’au proche infrarouge. Nous démontrons des seuils lasers bas en pompage optique pulsé et les premiers circuits photoniques actifs à microlaser dans les gammes spectrales bleue et ultraviolette. Nous proposons également une approche pour l’injection électrique dans des micro-anneaux qui est compatible avec des circuits photoniques et nous étudions des nitrures d’éléments III collés sur SiO₂ comme plateforme pour des circuits photoniques passifs dans le proche infrarougeIII-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our daily lives as they are used in white, blue, green, and ultraviolet light emitting diodes, as well as laser diodes and power and high frequency electronics. This material is highly versatile due to its tuneable large direct band gap from the ultraviolet to the visible. III-nitrides give access to a very wide range of electronic, optoelectronic, and photonic applications. In photonics, a promising field relies on the III-nitride on silicon platform for next generation photonic integrated circuits due to its large transparency window from the ultraviolet to the near-infrared and the possibility of monolithic integration of active emitters such as quantum wells and quantum dots. In this thesis, we study different photonic devices and their integration into active and passive photonic circuits at wavelengths going from the ultraviolet to the near-infrared. We demonstrate low threshold pulsed optically pumped lasing and the first active microlaser photonic circuits in the blue and ultraviolet spectral ranges. We also propose a scheme for electrical injection in microrings that is compatible with photonic circuits and investigate III-nitrides bonded on SiO₂ as a platform for passive photonic circuits in the near-infrared
28
Zhou, Dong Huang Wei-Ping. "Advanced finite-difference time-domain techniques for simulation of optical devices with complex material properties and geometric configurations /." *McMaster only, 2005.
29
Ziebell, Melissa. "Transceiver optique en silicium pour les réseaux d’accès." Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112181/document.
Abstract:
La photonique silicium est un domaine de recherche en plein expansion, visant à intégrer la photonique avec la microélectronique. Cette technologie est envisagée pour l’obtention de solutions bas-coûts dans le domaine des télécommunications optiques grâce à l'intégration de l'optique avec l’électronique de commande des composants. La réalisation d'un lien optique rapide pour transporter une information à haut débit nécessite le développement de blocs de base performants et compatibles avec la technologie CMOS. Dans ce contexte, les travaux menés durant ma thèse ont porté plus spécifiquement sur le modulateur optique en silicium, pour les applications haut débit, de 10 à 40 Gbit/s. Les résultats présentés portent notamment sur la conception, l’optimisation, la fabrication et la caractérisation de ce composant. Le modulateur est basé sur un effet électroréfractif obtenu par déplétion des porteurs dans des structures de type PN et PIPIN pour obtenir une variation de phase de l’onde optique. La modulation d’intensité est ensuite obtenue par intégration de la région active dans un interféromètre Mach Zehnder ou un résonateur en anneau. Des simulations électriques, optiques et radiofréquences ont été menées sur les différents éléments du composant, afin de concevoir un dispositif pour les applications FTTH (Fiber To The Home), fonctionnant à 1,27 µm. Parmi les points clefs de ces études on peut noter l’optimisation des électrodes RF coplanaires réalisée grâce au développement d’un modèle électro-optique prenant en compte la propagation des ondes électriques et optiques dans la région active. Un procédé technologique compatible avec la filière CMOS a ensuite été mis en place et les masques nécessaires à la fabrication ont pu être dessinés en considérant les tolérances de fabrication et paramètres critiques. Enfin un grand nombre de résultats expérimentaux ont pu être obtenus, sur des composants conçus à l’IEF et fabriqués au CEA-LETI. On peut notamment retenir un modulateur Mach Zehnder fonctionnant à 40 Gbit/s utilisant une diode « PIPIN » pour réaliser la variation d’indice, et présentant un taux d'extinction de 7.5 dB pour des pertes de seulement 6 dB. Les futures optimisations des modulateurs, silicium visent à les intégrer avec l’électronique de commande, et à aller vers des formats de modulation plus complexes mais aussi plus performants que la modulation d’intensité sur 2 niveaux considérée jusqu’à présentSilicon photonics is a research field in full expansion that works towards the integration of photonics and microelectronic components in a single chip. The creation of a broadband optical link that is able to carry high-speed information requires the development of efficient building blocks compatible with CMOS technology. The work carried out during my Ph.D. focused specifically on silicon optical modulators for high-speed applications from 10 to 40 Gbit/s. The work presented includes design, optimization, fabrication and characterization of the complete device. The modulator is based on the electro-refractive effect obtained by depletion of carriers in PN and PIPIN diodes to obtain a phase change of the optical mode. Intensity modulation is obtained by integration of the active region in a Mach-Zehnder interferometer or a ring resonator. Electrical, optical and radio frequency simulations were conducted on the various elements of the modulator to design a device for FTTH (Fiber To The Home) applications operating at 127 µm. Additional studies included the design of RF coplanar waveguide electrodes optimized through the development of an electro-optical model that takes into account the propagation of the electrical and optical waves in the active region. Compatible CMOS processes were proposed, and the necessary masks for fabrication were designed considering fabrication tolerances and critical parameters. Finally, various experimental results were obtained on components designed at IEF and fabricated at CEA-LETI. We can specially mention a Mach Zehnder modulator operating at 40 Gbit/s that uses a PIPIN diode to obtain an index variation, and having an extinction ratio of 7.5 dB and losses of only 6 dB. The goal of future optimizations of silicon modulator is to integrate these devices with the RF driver, and to move towards more complex and efficient modulation formats than the two-level intensity modulation seen so far
30
Pizzi, Giovanni. "Band structure engineering of Ge-rich siGe nanostructures for photonics appplications." Doctoral thesis, Scuola Normale Superiore, 2012. http://hdl.handle.net/11384/85857.
31
A, M. Naiini Maziar. "Horizontal Slot Waveguides for Silicon Photonics Back-End Integration." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-155732.
Abstract:
This thesis presents the development of integrated silicon photonic devices. These devices are compatible with the present and near future CMOS technology. High-khorizontal grating couplers and waveguides are proposed. This work consists of simulations and device design, as well as the layout for the fabrication process, device fabrication, process development, characterization instrument development and electro-optical characterizations. The work demonstrates an alternative solution to costly silicon-on-insulator photonics. The proposed solution uses bulk silicon wafers and thin film deposited waveguides. Back-end deposited horizontal slot grating couplers and waveguides are realized by multi-layers of amorphous silicon and high-k materials. The achievements of this work include: A theoretical study of fully etched slot grating couplers with Al2O3, HfO2 and AIN, an optical study of the high-k films with spectroscopic ellipsometry, an experimental demonstration of fully etched SiO2 single slot grating couplers and double slot Al2O3 grating couplers, a practical demonstration of horizontal double slot high-k waveguides, partially etched Al2O3 single slot grating couplers, a study of a scheme for integration of the double slot Al2O3 waveguides with selectively grown germanium PIN photodetectors, realization of test chips for the integrated germanium photodetectors, and study of integration with graphene photodetectors through embedding the graphene into a high-k slot layer. From an application point of view, these high-k slot waveguides add more functionality to the current silicon photonics. The presented devices can be used for low cost photonics applications. Also alternative optical materials can be used in the context of this photonics platform. With the robust design, the grating couplers result in improved yield and a more cost effective solution is realized for integration of the waveguides with the germanium and graphene photodetectors.QC 20141114
32
Giuglea, Alexandru, Guido Belfiore, Mahdi Khafaji, Ronny Henker, Despoina Petousi, Georg Winzer, Lars Zimmermann, and Frank Ellinger. "Comparison of Segmented and Traveling-Wave Electro-Optical Transmitters Based on Silicon Photonics Mach-Zehnder Modulators." Institute of Electrical and Electronics Engineers (IEEE), 2018. https://tud.qucosa.de/id/qucosa%3A35393.
Abstract:
This paper presents a brief study of the two most commonly used topologies - segmented and traveling-wave - for realizing monolithically integrated electro-optical transmitters consisting of Si-photonics Mach-Zehnder modulators and their electrical drivers. To this end, two new transmitters employing high swing breakdown voltage doubler drivers were designed in the aforementioned topologies and compared with regard to their extinction ratio and DC power consumption at the data rate of 30 Gb/s. It is shown that for the targeted data rate and extinction ratio, a considerably lower power consumption can be achieved with the traveling-wave topology than with its segmented counterpart. The transmitters were realized in a 250 nm SiGe BiCMOS electronic-photonic integrated technology.
33
Zanzi, Andrea. "Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects." Doctoral thesis, Universitat Politècnica de València, 2020. http://hdl.handle.net/10251/149377.
Abstract:
[EN] Optical technologies are the backbone of modern communication systems providing
high-speed access to the Internet, efficient inter and intra-data center interconnects
and are expending towards growing research fields and new markets such as satel-
lite communications, LIDARs (Laser Imaging Detection and Ranging) applications,
Neuromorphic computing, and programable photonic circuits, to name a few. Be-
cause of its maturity and low-cost, silicon photonics is being leveraged to allow these
new technologies to reach their full potential.As a result, there is a strong need for
innovative, high-speed and energy-efficient photonic integrated building blocks on
the silicon platform to increase the readiness of silicon photonic integrated circuits.
The work developed and presented in this thesis is focused on the design and char-
acterization of advanced passive and active devices, for photonic integrated circuits.
The thesis consists of three main chapters as well as a motivation and concluding
sections exposing the rationale and the accomplishments of this work. Chapter one
describes the design and characterization of an electro-optical Mach-Zehnder mod-
ulator embedded in highly efficient vertical pn junction exploiting the free-carrier
dispersion effect in the O-band.. Chapter two is devoted to the design and charac-
terization of a novel geometry of asymmetrical multimode interference device and
its implementation in a Mach-Zehnder modulator. Chapter three is dedicated to
the design and characterization of innovative 1-dimensional photonic crystal designs
for slow- lightmodulation applications. An extensive analysis of the main trade-off
arising from the use of slow light is presented.[ES] Las tecnologías ópticas son el eje vertebrador de los sistemas de comunicación mod- ernos que proporcionan acceso de alta velocidad a la Internet, interconexiones efi- cientes entre centros de datos y dentro de ellos. Además, se están expandiendo hacia campos de investigación crecientes y nuevos mercados como son las aplicaciones de comunicaciones por satélite, los LIDAR (Laser Imaging Detection and Ranging), la computación neuromórfica y los circuitos fotónicos programables, por nombrar algunos. La fotónica de silicio está considerada y aceptada ampliamente como una de las tecnologías clave para que dichas aplicaciones puedan desarrollarse. Como resultado, hay una fuerte necesidad de estructuras fotónicas básicas integradas que sean innovadoras, que soporten altas velocidades de transmisión y que sean más eficientes en términos de consumo de potencia, a fin de aumentar la capacidad de los circuitos integrados fotónicos de silicio. El trabajo desarrollado y presentado en esta tesis se centra en el diseño y la car- acterización de dispositivos avanzados pasivos y activos, para circuitos fotónicos integrados. La tesis consta de tres capítulos principales, así como de sendas sec- ciones de motivación y conclusiones que exponen los fundamentos y los logros de este trabajo. El capítulo uno describe el diseño y la caracterización de un modulador electro-óptico Mach-Zehnder incorporado en una unión pn vertical altamente eficien- ciente que explota el efecto de dispersión de plasma en banda O. El capítulo dos está dedicado al diseño y caracterización de una nueva geometría de dispositivo de interferencia multimodo asimétrico y su aplicación en un modulador Mach-Zehnder. El capítulo tres está dedicado al diseño y caracterización de innovadores cristales fotónicos unidimensionales para aplicaciones de modulación con luz lenta. Se pre- senta un amplio análisis de los principales retos derivados del uso de la misma.
[CA] Les tecnologies òptiques són l'eix vertebrador d'aquells sistemes de comunicació moderns que proporcionen accés d'alta velocitat a la Internet, així com intercon- nexions eficients inter i entre centres de dades. A més a més, s'estan expandint cap a camps d'investigació creixents i nous mercats com són les aplicacions de co- municacions per satèl·lit, els LIDAR (Laser Imaging Detection and Ranging), la computació neuromòrfica i els circuits fotònics programables, entre d'altres. La fotònica de silici és considerada i acceptada àmpliament com una de les tecnologies clau i necessàries perquè aquestes aplicacions puguen desenvolupar-se. Per aquest motiu, es fa necessària l'existència d'estructures fotòniques bàsiques integrades que siguen innovadores, que suporten altes velocitats de transmissió i que siguen més eficients en termes de consum de potència, a fi d'augmentar la capacitat dels cir- cuits integrats fotònics de silici. El treball desenvolupat i presentat en aquesta tesi se centra en el disseny i la caracterització de dispositius avançats passius i actius, per a circuits fotònics integrats. La tesi consta de tres capítols principals, així com d'una secció de motivació i una altra de conclusions que exposen els fonaments i els assoliments d'aquest treball. El capítol u descriu el disseny i la caracterització d'un modulador electro-òptic Mach-Zehnder incorporat en una unió pn vertical d'alta efi- ciència que explota l'efecte de dispersió de plasma en la banda O. El capítol dos està dedicat al disseny i caracterització d'una nova geometria de dispositiu d'interferència multimode asimètric així com a la seua aplicació en un modulador Mach-Zehnder. El capítol tres està dedicat al disseny i caracterització d'innovadors cristalls fotònics unidimensionals per a aplicacions de modulació amb llum lenta. S'inclou també una anàlisi detallada dels principals reptes derivats de l'ús d'aquest tipus de llum.
I want to thank you the Generelitat Valenciana and the European Project L3MATRIX for the funding, without them my doctorate would not taken place.
Zanzi, A. (2020). Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/149377
TESIS
34
Kervella, Gaël. "Circuits intégrés photoniques sur InP pour la génération de signaux hyperfréquences." Thesis, Rennes 1, 2016. http://www.theses.fr/2016REN1S008/document.
Abstract:
Cette thèse s'inscrit dans le cadre de l'optique micro-onde. Nous avons mis en oeuvre différentes solutions opto-électroniques dans le but de réaliser un synthétiseur hyperfréquence monolithiquement intégré, faiblement bruité et largement accordable jusqu'au domaine millimétrique. Le synthétiseur est basé sur l'intégration sur InP de deux lasers DFB, d'un coupleur optique et d'une photodiode rapide. En outre, un modulateur électro-optique est également implémenté sur la puce afin de transmettre un signal de données sur la porteuse générée. Les performances obtenues en terme de gamme d'accord et de transmission de données sans fil se sont révélées conformes aux objectifs. Ainsi, une gamme d'accord de 0 à 110 GHz et un débit de transmission de donnée sans fil à courte distance de 1 Gbit/s ont pu être démontrés, établissant notre système à l'état de l'art mondial pour ce type de composant totalement intégré. Les performances en terme de bruit de phase se sont en revanche révélées décevantes. Pour remédier à ce problème nuisant à la montée en débit supérieurs, nous avons investigué deux solutions de stabilisation de la fréquence porteuse. La première, basée sur un asservissement électronique (OPLL) de la puce, s'est pour le moment révélé infructueuse, mais a permis d'étudier plus avant les problématiques qui lui sont liées. La seconde solution, basée sur un système inédit de rétroinjection optique mutuelle et une stabilisation sur un oscillateur électronique externe a quant à elle répondu à nos souhaits. En effet, la stabilisation de la fréquence porteuse par cette technique a permis de démontré des largeurs de raies inférieure à 30 Hz et un bruit de phase réduit à -90 dBc/Hz à 10 kHz d'une porteuse accordée à 90 GHz. A la suite de ces travaux sur une première génération de composants, une deuxième génération a été développée afin d'améliorer les performances intrinsèques de la puce en remédiant aux limitations observées jusqu'alors. Ainsi, une nouvelle configuration de cavité a été conçue intégrant notamment des lasers plus longs ainsi que des miroirs haute réflectivité. Par ailleurs, une optimisation de la structure de la photodiode a été réalisée afin d'améliorer encore sa bande passante. Une telle source permet d’envisager la génération et la modulation de signaux microonde faible bruit de phase et largement accordables sur des composants monolithiquement intégrés répondant aux exigences de compacité, de reproductibilité et de performances haut débit requises par les industries des télécommunications, de la défense ou encore du domaine spatialThis thesis deals with the microwave photonics context. We have implemented various opto- electronic solutions in order to realize a monolithically integrated microwave synthesizer which has a low noise and a wide tunability until millimeter-wave frequencies. The synthesizer is based on the integration of two InP DFB lasers, an optical coupler and a fast photodiode. In addition, an electro-optic modulator is also implemented on the chip in order to transmit data on the generated carrier. The performances obtained in terms of tunability and wireless data transmission proved consistent with the objectives. Thus, a tuning range of 0-110 GHz and a short distance wireless data transmission rate of 1 Gbit /s have been demonstrated, establishing our system to the state of the art for this type of fully integrated component. Phase noise and linewidth performances have however been disappointing. To solve this problem affecting the data rate we have investigated two ways of stabilizing the carrier frequency. The first, based on an electronic feedback loop (OPLL) has yet proved unsuccessful but allowed us to further explore the related issues. However, the second solution, based on a new system of optical cross injection and stabilization to an external electronic oscillator has filled our wishes. Indeed, the stabilization of the carrier frequency by this technique has demonstrated linewidth less than 30 Hz and a reduced phase noise to -90 dBc / Hz at 10 kHz for a given carrier at 90 GHz. Next to the first generation components, a second generation was developed to improve the intrinsic performances of the chip by remedying the limitations previously observed. Thus, a new cavity configuration was designed including longer lasers and high reflectivity integrated mirrors made by materials deep etching. Moreover, optimization of the photodiode structure was carried out to further improve the bandwidth. Such a source allows to consider the generation and modulation of low phase noise and widely tunable microwave signals on monolithically integrated components matching the compactness, reproducibility and high speed performances required by the telecom, defense and space industries
35
Polster, Robert. "Architecture of Silicon Photonic Links." Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112177/document.
Abstract:
Les futurs calculateurs de haute performance (HPC) devront faire face à deux défis majeurs : la densité de la bande passante d'interconnexion et les problématiques de consommation d'énergie. La photonique silicium est aujourd’hui perçue comme une solution solide pour aborder ces questions, tant du fait de ses performances que de sa viabilité économique en raison de sa compatibilité directe avec la microélectronique CMOS. Actuellement, une tendance de fond conduit à remplacer les interconnexions métalliques par des liens optiques ; cette évolution a été initiée sur des liaisons grandes distances mais atteint actuellement le niveau des liaisons entre cartes électroniques et pourrait conduire à moyen terme à l’intégration de liens optiques au sein mêmes des circuits intégrés électroniques. La prochaine étape est en effet envisagée pour l'interconnexion des processeurs au sein de puces multi-cœurs en positionnant les liens photoniques sur un même support de silicium (« interposer »). Plusieurs travaux ont démontré la possibilité d'intégrer tous les éléments nécessaires pour la réalisation de liaisons optiques sur un substrat de silicium ouvrant des perspectives de co-intégration optique et électronique très riches.Dans ce contexte, la première contribution de cette thèse est l'optimisation d'un lien de photonique de silicium en terme d'efficacité énergétique par bit (à minimiser). L'optimisation que nous avons conduite a pris en compte une modélisation de la consommation d'énergie pour le laser de la liaison, celle de l’étape dé-sérialisation des données, du résonateur en anneau considéré comme modulateur optique et des circuits de réception (« front-end ») et de décision. Les résultats ont montré que les principales contributions à la consommation de puissance au sein d’un lien optique sont la puissance consommée par le laser et les circuits d’alimentation du modulateur électro-optique. En considérant des paramètres de consommation extraits de simulations numériques et de travaux publiés dans des publications récentes, le débit optimal identifié se trouve dans la plage comprise entre 8 Gbits/seconde et 22 Gbits/seconde selon le nœud technologique CMOS utilisé (65nm à 28nm FD SOI). Il est également apparu qu’une diminution de la consommation de puissance statique du modulateur utilisé pourrait encore ramener ce débit optimal en-dessous de 8 Gbits/seconde.Afin de vérifier ces résultats, un circuit intégré récepteur de liaison optique a été conçu et fabriqué en se basant sur un débit de fonctionnement de 8 Gbits/seconde. Le récepteur utilise une technique d’entrelacement temporel destinée à réduire la vitesse d'horloge nécessaire et à éviter potentiellement l’étape de dé-sérialisation dédiée des informationsFuture high performance computer (HPC) systems will face two major challenges: interconnection bandwidth density and power consumption. Silicon photonic technology has been proposed recently as a cost-effective solution to tackle these issues. Currently, copper interconnections are replaced by optical links at rack and board level in HPCs and data centers. The next step is the interconnection of multi-core processors, which are placed in the same package on silicon interposers, and define the basic building blocks of these computers. Several works have demonstrated the possibility of integrating all elements needed for the realization of short optical links on a silicon substrate.The first contribution of this thesis is the optimization of a silicon photonic link for highest energy efficiency in terms of energy per bit. The optimization provides energy consumption models for the laser, a de- and serialization stage, a ring resonator as modulator and supporting circuitry, a receiver front-end and a decision stage. The optimization shows that the main consumers in optical links is the power consumed by the laser and the modulator's supporting circuitry. Using consumption parameters either gathered by design and simulation or found in recent publications, the optimal bit rate is found in the range between 8 Gbps and 22 Gbps, depending on the used CMOS technology. Nevertheless, if the static power consumption of modulators is reduced it could decrease even below 8 Gbps.To apply the results from the optimization an optical link receiver was designed and fabricated. It is designed to run at a bit rate of 8 Gbps. The receiver uses time interleaving to reduce the needed clock speed and aleviate the need of a dedicated deserialization stage. The front-end was adapted for a wide dynamic input range. In order to take advantage of it, a fast mechanism is proposed to find the optimal threshold voltage to distinguish ones from zeros.Furthermore, optical clock channels are explored. Using silicon photonics a clock can be distributed to several processors with very low skew. This opens the possibility to clock all chips synchronously, relaxing the requirements for buffers that are needed within the communication channels. The thesis contributes to this research direction by presenting two novel optical clock receivers. Clock distribution inside chips is a major power consumer, with small adaptation the clock receivers could also be used inside on-chip clocking trees
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Dremetsika, Evdokia. "Nonlinear optics in graphene: Detailed characterization for application in photonic circuits." Doctoral thesis, Universite Libre de Bruxelles, 2018. http://hdl.handle.net/2013/ULB-DIPOT:oai:dipot.ulb.ac.be:2013/264211.
Abstract:
In the quest for ultrathin materials compatible with CMOS technology for all-optical signal processing applications in integrated photonics, graphene appears to be a promising candidate, with broadband1 optical properties and a high and broadband optical nonlinearity. However, researchers do not agree on the value of its nonlinear refractive index, and commonly used characterization methods do not provide a clear picture of the optical nonlinearity, in terms of its tensor nature or relaxation time. In the first part of this thesis, apart from the previously used Z-scan method, we have also used the ultrafast Optical Kerr Effect method coupled to Optical Heterodyne Detection (OHD-OKE) for the characterization of the third order optical nonlinearity of monolayer CVD graphene at telecom wavelengths. This method allows to separately measure the real and the imaginary part of the third-order nonlinearity, as well as their dynamics. With respect to the Z-scan method, OHD-OKE presents the major advantage of being robust against inhomogeneities of the sample. As such, we have demonstrated that graphene has a negative nonlinear refractive index, contrary to previously reported results. In addition, we have studied the real and imaginary part of graphene’s nonlinearity, when electrostatic gating is applied to change the chemical potential of graphene. Furthermore, we have proposed an enhanced version of the OHD-OKE method, together with the appropriate theoretical framework, in order to extract the tensor elements of the nonlinearity including the out-of-plane tensor elements. In particular, we have measured separately the time response of the two main tensor elements of the nonlinear susceptibility and we have experimentally verified that the out-of-plane tensor components are negligible. In the second part of this thesis, we have investigated, from an experimental point of view, the use of the nonlinear optical response of graphene for all-optical switching applications in integrated photonics. Namely, we have designed simple silicon nitride waveguide structures that constitute basic building blocks of switching devices, which were then fabricated and covered by graphene patches. Finally, we have experimentally tested the graphene-covered structures at low and high power levels and discussed the results.Doctorat en Sciences de l'ingénieur et technologie
info:eu-repo/semantics/nonPublished
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Micó, Cabanes Gloria. "Integrated Spectroscopic Sensor fabricated in a novel Si3N4 platform." Doctoral thesis, Universitat Politècnica de València, 2021. http://hdl.handle.net/10251/159381.
Abstract:
[ES] Esta tesis se ha centrado en el modelado, diseño y demostración experimental de un sensor espectroscópico integrado basado en un AWG (del inglés Arrayed Waveguide Grating). El dispositivo ha sido diseñado y fabricado en una nueva plataforma de nitruro de silico (Si3N4) en oxido de silico (SiO2) desarrollada en España. El trabajo realizado en esta tesis se puede dividir en dos secciones principalmente. En la primera parte, se describe el panorama general de las plataformas de Si3N4 existentes y su estado del arte, junto con la descripción de los procesos de fabricación y caracterización de nuestra plataforma de Si3N4 con 300 nm de altura en la capa de guiado. En la segunda parte, se presenta el dispositivo bautizado como Integrated Optical Spectroscopic Sensor (IOSS). El IOSS consiste en un AWG cuyo conjunto de guías de onda está dividido en dos subgupos diseñados para replicar los canales del AWG. Las guías de uno de los subgrupos contienen ventanas de sensado, que están definidas por secciones en las que el núcleo de las guías está al descubierto y, por tanto, en contacto con el medio que las rodea. De esta manera, el sensado se lleva a cabo mediante la interacción del campo evanescente con la muestra depositada. Las guías del segundo subconjunto permanecen inalteradas. Por lo tanto, el dispositivo proporciona al mismo tiempo los espectros
de sensado y de referencia. El modelo matemático del IOSS, su procedimiento de diseño y la prueba de concepto del sensor configurado para espectroscopía de absorción se describen en esta tesis.[CAT] La present tesi s'ha centrat en el modelatge, disseny i demostració experimental d'un sensor espectroscòpic integrat basat en un AWG (de l'anglès Arrayed Waveguide Grating). El dispositiu ha sigut dissenyat i fabricat en una nova plataforma de nitrur de silici (Si3N4) en òxid de silici (SiO2) desenvolupada a Espanya. El treball realitzat en aquesta tesi es pot dividir en dues seccions principalment. En la primera part, es descriu el panorama general de les plataformes de Si3N4 existents i el seu estat de l'art, juntament amb la descripció dels processos de fabricació i caracterització de la nostra plataforma de Si3N4 amb 300 nm d'altura en la capa de guiat. En la segona part, es presenta el dispositiu batejat com Integrated Optical Spectroscopic Sensor (IOSS). El IOSS consisteix en un AWG en el que el seu conjunt de guies d'ona està dividit en dos subgrups dissenyats per a replicar els canals del AWG. Les guies d'un dels subgrups conté finestres de detecció, que estan definides per seccions en les quals el nucli de les guies d'ona està al descobert i en contacte amb el mitjà que li envolta. D'aquesta manera, la detecció es duu a terme mitjançant la interacció del camp evanescent amb la mostra depositada. Les guies del segon subconjunt romanen inalterades. Per tant, el dispositiu proporciona al mateix temps els espectres de detecció de referència. El model matemàtic del IOSS, el seu procediment de disseny i la prova de concepte del sensor configurat per a espectroscopia d'absorció es descriuen en aquesta tesi.
[EN] This thesis is focused on the model, design and experimental demonstration of an integrated spectroscopic sensor based on a modified Arrayed Waveguide Grating (AWG). The device has been designed and fabricated in a new silicon nitride (Si3N4) on silicon oxide (SiO2) platform developed in Spain. The work performed for this thesis can be then divided into two main sections. In the first part, an overview of the existing Si3N4 platforms and their state of art is described, alongside the report on the fabrication and characterization of our 300 nm guiding film height Si3N4 platform. On the second part, the device named Integrated Optical Spectroscopic Sensor (IOSS) is presented. The IOSS consists of an AWG which arrayed waveguides are divided into two sub-sets engineered to replicate the AWG channels. The waveguides of one of the sub-sets contain sensing windows, defined as waveguides sections which core is in contact with the surrounding media. Thus, the sensing is performed through evanescent field interaction with the sample deposited. The waveguides from the second sub-set remain isolated. Therefore, the device provides both sensing and reference spectra. The IOSS mathematical model, design procedure and proof of concept configured for absorption spectroscopy are reported in this thesis.
Micó Cabanes, G. (2020). Integrated Spectroscopic Sensor fabricated in a novel Si3N4 platform [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/159381
TESIS
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Ferrotti, Thomas. "Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEC054/document.
Abstract:
Depuis plusieurs années, le volume de données échangé à travers le monde augmente sans cesse. Pour gérer cette large quantité d’information, des débits élevés de transmission de données sur de longues distances sont essentiels. Puisque les interconnections à base de cuivre ne peuvent pas suivre cette tendance, des systèmes de transmission optique rapides sont requis dans les centre de données. Dans ce contexte, la photonique sur silicium est considérée comme une solution pour obtenir des circuits photoniques intégrés à un coût réduit. Bien que cette technologie ait connu une croissance significative au cours de la dernière décennie, les transmetteurs actuels à haut débit de transmission sont principalement basés sur des sources laser externes. Par conséquent, l’objectif de ce travail de thèse était de concevoir et produire un transmetteur à haut débit de transmission de données pour la photonique sur silicium, doté d’une source laser intégrée.Ce transmetteur se compose d’un modulateur silicium de type Mach-Zehnder, co-intégré sur la même plaque avec un laser hybride III-V sur silicium à réseaux de Bragg distribués, dont la longueur d’onde d’émission peut être contrôlée électriquement autour de 1.3μm. La conception des différents éléments constituant à la fois le laser (coupleurs adiabatique entre le III-V et le silicium, miroirs de Bragg) et le modulateur (jonctions p-n, électrodes à ondes progressives) est détaillée, de même que leur fabrication. Pendant la caractérisation des transmetteurs, des taux de transmission de données jusqu’à 25Gb/s, pour des distances allant jusqu’à 10km ont été démontrés avec succès, avec la possibilité de contrôler la longueur d’onde jusqu’à 8.5nm. Par ailleurs, afin d’améliorer l’intégration de la source laser avec le circuit photonique sur silicium, une solution basée sur le dépôt à basse température (en-dessous de 400°C) d’une couche de silicium amorphe pendant la fabrication est aussi évaluée. Des tests sur une cavité laser à contre-réaction distribuée ont montré des performances au niveau de l’état de l’art (avec des puissances de sortie supérieures à 30mW), prouvant ainsi la viabilité de cette approcheFor several years, the volume of digital data exchanged across the world has increased relentlessly. To manage this large amount of information, high data transmission rates over long distances are essential. Since copper-based interconnections cannot follow this tendency, high-speed optical transmission systems are required in the data centers. In this context, silicon photonics is seen as a way to obtain fully integrated photonic circuits at an expected low cost. While this technology has experienced significant growth in the last decade, the high-speed transmitters demonstrated up to now are mostly based on external laser sources. Thus, the aim of this PhD thesis was to design and produce a high-speed silicon photonic transmitter with an integrated laser source.This transmitter is composed of a high-speed silicon Mach-Zehnder, co-integrated on the same wafer with a hybrid III-V on silicon distributed Bragg reflector laser, which emission wavelength can be electrically tuned in the 1.3μm wavelength region. The design of the various elements constituting both the laser (III-V to silicon adiabatic couplers, Bragg reflectors) and the modulator (p-n junctions, travelling-wave electrodes) is thoroughly detailed, as well as their fabrication. During the characterization of the transmitters, high-speed data transmission rates up to 25Gb/s, for distances up to 10km are successfully demonstrated, with the possibility to tune the operating wavelength up to 8.5nm. Additionally, in order to further improve the integration of the laser source with the silicon photonic circuit, a solution based on the low-temperature (below 400°C) deposition of an amorphous silicon layer during the fabrication process is also evaluated. Tests on a distributed feed-back laser structure have shown performances at the state-of-the-art level (with output powers above 30mW), thus establishing the viability of this approach
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Cadavid, Gomez Sandra. "Effects of dynamics and optical feedback on hybrid III-V/Si semiconductor lasers." Electronic Thesis or Diss., Institut polytechnique de Paris, 2020. http://www.theses.fr/2020IPPAT008.
Abstract:
Les circuits intègres photoniques (PIC) sont devenus des éléments clés pour effectuer des fonctions de transmission et de réception à large bande dans les réseaux de communication optique. Cette thèse fournit des informations sur les lasers a semi-conducteurs hybrides (SCL) constitués d’une couche active de matériaux III-V sur un substrat de silicium sur isolant (SOI) pour exploser conjointement les propriétés d’émission des couches III-V et les nombreux avantages offerts par Si pour les applications sur chip. En raison des développements technologiques importants en électronique, cette approche hybride est bien positionnée pour répondre aux exigences de transmission et d’accès à courte distance à moindre cout. Cependant, plusieurs défis subsistent, comme le manque de sources lumineuses efficaces et de dispositif sans isolateur. Du point de vue de l’intégration monolithique d’une intégration hétérogène PIC, il est essential de s’assurer que les réflexions parasites qui peuvent provenir de plusieurs emplacement n’affectent pas la stabilité du laser. Plus précisément, les composants hybrides III-V sur Si semblent avoir de nombreuses sources potentielles de réflexions qui peuvent créer des centimètres de cavités externes en plus de celles naturellement produites à l’intérieur de la fibre de l’ordre de plusieurs mètres. Par conséquent, le travail présenté ici vise à comprendre le comportement des SCL III-V/Si lorsqu’ils sont soumis à une variation de réaction optique, explore les aspects fondamentaux de la dynamique chaotique et étudie les applications potentielles adaptées aux systèmes de télécommunications optiques dans une tentative de répondre aux exigences existantes en matière de haute vitessePhotonic Integrated Circuits (PIC) have become key elements to perform broadband transmission and reception functions in optical communication networks. This thesis provides information on hybrid semiconductor lasers (SCL) consisting of an active layer of III-V materials on a silicon-on-insulator (SOI) substrate to jointly explode the emitting properties of III-V layers and the numerous advantages offered by Si for on-chip applications. Due to the significant technological developments in electronics, this hybrid approach is well positioned to meet the high volume requirements for short distance transmission and access networks at a lower cost. However, several challengest still exist such as the lack of effective light sources and isolator-free devices. From a monolithic perspective of a PIC hetereogeneous integration, it is essential to ensure that the parasitic reflections that may stem from multiple locations do not affect the stability of the laser. Specifically, III-V hybrid components on Si appear to have many potential sources of reflections that can create centimeter external cavities in addition to those naturally produced inside the fiber in the order of several meters. Therefore, the work presented herein aims at understanding the behavior of III-V/Si SCLs when subjected to a variation of optical feedback, explores the basics aspects of chaotic dynamics, and investigates potential applications suitable for optical telecommunication systems in an attempt to meet the existing an emerging high speed requirements
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Hussein, Ali Abdulsattar. "Photonic Integrated Circuits Utilizing Nano-Electromechanical Systems on Silicon-on-Insulator Platform for Software Defined Networking in Elastic Optical Networks: New Insights Into Phased Array Systems, Tunable WDM, and Cascaded FIR and IIR Architectures." Thesis, Université d'Ottawa / University of Ottawa, 2019. http://hdl.handle.net/10393/39592.
Abstract:
Optical communications systems operate at the limits of their margins to respond to increasing capacity demands. Some of the signal processing functions required must soon operate at speeds beyond electronic implementation. Optical signal processors are fundamentally analog which requires precise control of the operating state. Programmable optical components are consequently essential. The thesis explores and elucidates the properties of meshes of generalized Mach-Zehnder interferometers (GMZIs) amenable to silicon (Si) photonics integration that are based on multimode interference couplers with programmability achieved via voltage controlled phase-shift elements within the interferometer arms to perform a variety of finite impulse response (FIR) and infinite impulse response (IIR) signal processing functions.
The thesis presents a novel class of integrated photonic phased array systems with a single-stage, multistage, and feedback architectures. The designed photonic integrated systems utilize nano-electromechanical-system (NEMS) operated phase shifters of cascaded free suspended slot waveguides that are compact and require a small amount of power to operate. The structure of the integrated photonic phased array switch (IPPAS) elements is organized such that it brings the NEMS-operated phase shifters to the exterior sides of the construction; facilitating electrical connection. The transition slot couplers used to interconnect the phase shifters to the rest of the silicon structure are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the fabric, which is taken as a ground. Phased array processors of 2×2 and 4×4 multiple-input-multiple-output (MIMO) ports are conveniently designed within reasonable footprints native to the current fabrication technologies. The response of the single-stage 4×4 broadband IPPAS element is determined, and its phase synthesis states required for single-throw, double-throw and broadcast routing operations are predicted. The transmission responses of the single-stage wavelength division multiplexing (WDM) processors of 2×2 and 4×4 MIMO ports are simulated. The wavelength steering capability of the transmission interferograms by applying progressive phase shifts through the array of NEMS-operated phase shift elements of the single-stage 4×4 WDM (de)multiplexer is demonstrated.
The advantages of cascading broadband and WDM phased array sections are articulated through several study cases. Five different cascaded phased array architectures are trialed for the construction of non-blocking 4×4 IPPAS broadband switches that are essential elements in the construction of universal photonic processors. A cascaded 2×2 WDM (de)multiplexer that can set the bandwidth of the (de)multiplexed cyclic channels into a binary number of programmable values is demonstrated. The envelope and wavelength modulations of the transmission responses utilizing a cascaded forward structure of three 2×2 sections that can be utilized for the (de)multiplexing of different bandwidth channels are demonstrated providing individual wavelength steering capability of the narrowband and wideband channels and the individual wavelength steering capability of the slow envelope and wavelength modulating functions. Innovative universal 2×2 and 4×4 cascaded phased array processors of advanced high-order architectures that can function as both non-blocking broadband routers and tunable WDM (de)multiplexers with spectrum steering and bandwidth control of the (de)multiplexed demands are introduced.
The multimode interference (MMI) coupler is utilized for the construction of several IIR feedback photonic processors. Tunable photonic feedback processors have the advantage of using less number of MMI couplers compared to their counterparts of FIR forward-path processors saving on the footprint and loss merits. A passive feedback 2×2 (de)multiplexer made of a 4×4 MMI coupler and two loopback paths is proposed. The inclusion of an imbalance in the lengths of the loopback paths of the same symmetrical feedback (de)multiplexer is demonstrated to achieve wavelength modulation of the (de)multiplexed transmission responses that are useful for the (de)multiplexing of different bandwidth channels. Several newly introduced IIR feedback architectures are demonstrated to function similarly as their counterparts of FIR forward-path processors as binary bandwidth variable (de)multiplexers, envelope and wavelength modulation (de)multiplexers, and universal feedback processors.
The investigation provided in this thesis is also supported with dynamic zero-pole evolution analysis in the complex plane of analysis of the studied FIR and IIR photonic processors to enhance understanding the principle of operation. This research expands the prospective for constructing innovative silicon-on-insulator (SOI) based optical processors for applications in modern optical communication systems and programmable elastic optical networks (EONs).
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Neto, Hugo Daniel Barbosa. "Packaging of photonic integrated circuits." Master's thesis, Universidade de Aveiro, 2017. http://hdl.handle.net/10773/23552.
Abstract:
Mestrado em Engenharia Eletrónica e TelecomunicaçõesWith the continuous evolution of optical communication systems, emerged a need for high-performance optoelectronic elements at lower costs. Photonic packaging plays a key role for the next-generation of optical devices. In this work a standard packaging design rules is described, covering both the electrical and optical-packaging exploring both active and passive adjusting techniques, as well as the thermal management of the photonic integrated circuit (PIC). First a process for fiber-to-chip coupling with custom made ball-lensed fibers, is performed and tested initially in a testing-chip and thereafter in a manufactured practical study-case composed by a silicon holder with an InP distributed feedback (DFB) laser. The process of manufacturing etched V-grooves for fiber alignment is approached in detail. After this, for electrical interconnects and radio frequency (RF) packaging, both wire-bonding and flip-chip technique are discussed, and a characterization of the s-parameters in a PIC with wire-bonding is presented. A technique based on ruthenium-based sensors and platinum and titanium-based sensors for thermal control of the PIC is studied and the tested using a custom made PCB designed exclusively for that purpose.
Com a constante evolução dos sistemas de comunicação óticos veio a necessidade de componentes optoelectrónicos de elevada performance a custos relativamente baixos. O encapsulamento ótico tem um papel chave nos dispositivos óticos de última geração. Neste trabalho são descritas as regras de um processo de encapsulamento padrão, que abrange tanto o encapsulamento elétrico e ótico onde são exploradas técnicas de ajustamento ativas e passivas bem como o controlo térmico do circuito ótico integrado (PIC). No início foi efetuado um processo de acoplamento da fibra ao chip com fibras de lente esférica personalizadas, numa primeira usando um chip de teste e de seguida num caso de estudo prático que consiste numa estrutura composta por um holder de silício com um laser de realimentação distribuída (DFB). É abordado em detalhe o processo de fabricação de V-grooves para o alinhamento da fibra com o chip. De seguida são apresentadas e discutidas as técnicas de wire-bonding e flip-chip para o encapsulamento elétrico e ligação dos conectores de radiofrequência (RF), é feito um estudo onde são apresentados os resultados da caraterização dos parâmetros S de um PIC com wire-bonding. Para o controlo térmico do módulo é apresentada uma técnica baseada em sensores de temperatura de ruténio e sensores de Platina e titânio testada numa PCB personalizada
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Yang, Gang. "Compact Photonic Integrated Passive Circuits." Thesis, The University of Sydney, 2021. https://hdl.handle.net/2123/26958.
Abstract:
Photonic Integrated Circuits (PICs) based on silicon photonics have received great interest due to the low loss caused by the high-refractive-index contrast and the complementary metal-oxide semiconductor compatibility. The need for high-density, high-yield, low-cost, low-power consumption, and large-scale on-chip photonic integration requires the technologies to further minimize the size while exhibiting high performance. Moreover, the fast development and expansion of silicon photonics devices for different applications and functionalities require effective design approaches to optimize the device performance while reducing the design complexity.
In this thesis, several fundamental components for PICs are presented as the building blocks for advanced photonic circuits. To test the effectiveness of the design, Mach–Zehnder interferometers are simulated and fabricated on a Silicon-on-Insulator (SOI) platform, which shows a good agreement between the experimental and simulation results. Moreover, compact vertical grating couplers with broad optical bandwidth are studied. Experimental results show the compact size and the light coupling capabilities.
Multimode Interference (MMI) splitter acts as one critical component in PICs. However, the minimum requirement of mid-to-mid channel spacing to avoid crosstalk limits the MMI size to be further reduced and thus limits the component density in the photonic integration. To solve this problem, a compact SOI MMI power splitter based on optical strip barriers is presented to achieve high crosstalk reduction. Three different MMI power splitters are designed and simulated with an ultra-small device footprint, high uniformity, while maintaining a low insertion loss of 0.4dB.
Inverse design methods with different optimization algorithms are utilized to design compact and high-performance PIC components. Firstly, a sequential least-squares programming algorithm is introduced to inverse design a waveguide crossing. This gradient-based algorithm is suitable for simple structures with fewer parameters, or a good starting point can be obtained from experience or physical theories.
Secondly, a novel dynamic iterative batch optimization method is presented in the thesis to design a high-performance segmented mode expander. In the simulation, the optimized structure achieves a coupling efficiency of 81% for TE polarization at the wavelength of 1550nm. It also shows a simulated transmission loss of lower than -1.137dB within 60nm bandwidth. This approach paves the way for the rapid design of PIC components with a compact footprint. Additionally, a Direct Binary Search (DBS) algorithm is introduced for designing pixel-like structures with binary-value-represented topology patterns, where a 3dB beam splitter is used in the design. DBS algorithm can be utilized to generate a high-quality dataset used for deep learning acceleration methods.
To solve the time-efficiency and non-scalable issues of conventional inverse design methods, a neural network-based inverse design approach is presented and applied on the design of a wavelength demultiplexer structure. The method solves the data domain shift problem that existed in the conventional tandem network architecture and improves the prediction accuracy with a 99% validation accuracy. It also shows high stability and robustness to the quantity and quality of training data. The demonstrated wavelength demultiplexer has an ultra-compact footprint of 2.6×2.6μm2, a high transmission efficiency with a transmission loss of -2dB, and a low crosstalk around -7dB simultaneously.
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Santini, Guillaume. "Conception fabrication et caractérisation d’un photorécepteur cohérent en filière PIC InP pour les applications 100-400 Gbit/s." Thesis, Evry, Institut national des télécommunications, 2017. http://www.theses.fr/2017TELE0024/document.
Abstract:
Ce travail porte sur la conception, la fabrication et la caractérisation d’un photorécepteur cohérent en filière PIC InP pour les applications 100-400 Gbit/s. La solution retenue est un récepteur cohérent pré-amplifié par un SOA pour permettre d’améliorer la responsivité du récepteur par rapport à un récepteur cohérent classique. De plus, ce récepteur est réalisé en technologie enterrée pour permettre un fonctionnement sur une plus grande gamme de longueurs d’onde. Enfin, un récepteur cohérent non pré-amplifié est aussi réalisé pour pouvoir évaluer l’impact de l’intégration du SOA sur le fonctionnement de notre récepteur. La première partie de cette étude est consacrée à des rappels sur les transmissions optiques à très haut débit, à un état de l’art sur les récepteurs cohérents, à une présentation des différents photodétecteurs et à une présentation de l’hybrid 90° qui est le composant coeur des récepteurs cohérents. Dans un second temps, nous présentons les différents choix retenus pour la conception de notre récepteur. L’étude de deux hybrid 90° simulés en technologie ridge et en technologie enterrée est détaillée. Nous commentons également le choix des photodiodes ainsi que le choix du SOA utilisé pour notre composant. Le troisième chapitre est consacré aux différentes étapes technologiques permettant la fabrication de notre récepteur cohérent pré amplifié. Nous commençons par une description des différentes techniques d’épitaxie utilisées. Ensuite, nous présentons en détails les 22 étapes technologiques nécessaires pour réaliser notre récepteur. Enfin, nous regroupons l’ensemble des caractérisations réalisées sur notre récepteur cohérent. Après un rappel sur les différentes parties de celui-ci et de leurs performances clés, nous caractérisons les composants unitaires formant notre récepteur (mixeur cohérent, photodiodes UTC et SOA). Enfin nous présentons les caractéristiques statiques et dynamiques de notre récepteur et nous comparons ses performances avec celles de l’état de l’art. Ces travaux de thèse ont permis de démontrer la faisabilité d’un récepteur pré-amplifié utilisant un SOA intégré en technologie InP enterrée avec un record de responsivité de 5 A/W. Ceci représente un gain de 12,5 dB par rapport à un récepteur cohérent non amplifié idéal et un gain de 15,5 dB par rapport à l’état de l’art des récepteurs cohérents. De plus, la consommation engendrée par cette intégration reste très faible (240 mW). Enfin, nous avons démontré une démodulation à 32 Gbauds avec un facteur Q de 14 dB. La bande passante de 40 GHz de nos diodes est compatible avec des applications à 56 Gbauds et peut être améliorée pour des applications à 100 Gbauds en réduisant la taille des photodiodes. Ce travail de thèse ouvre donc le chemin pour de nouveaux récepteurs pré-amplifés par un SOA pour des applications à 400 Gbit/sThis work focuses on the design, manufacturing and characterization of a coherent photoreceptor in PiC InP for 100-400 Gbit/s applications. The chosen solution is a preamplified coherent receiver with an SOA to improve the responsivity compared to a conventional coherent receiver. In addition, this receiver is made in buried technology to allow operation over a wider range of wavelengths. Finally, a coherent receiver without SOA is also produced to be able to evaluate its impact on the performances of our receiver. The first part of this study is devoted to reminders about very high speed optical transmissions, about state of the art on coherent receivers, about a presentation of the different photodetectors and a presentation of the 90° hybrid which is the core component in coherent receivers. Secondly, we present the various choices made for the design of our receiver. The study of two 90° hybrids simulated in ridge or in buried technology is detailed. We also comment the choices of photodiodes and SOA used for our component. The third chapter is devoted to the different technological steps used to build our preamplified receiver. We start with a description of the different epitaxial techniques used. Then, we present in detail the 22 technological steps required to realize our receiver. Finally, we group all the characterizations preformed on our coherent receiver. We characterize the unitary components of our receiver (hybrid 90°, UTC photodiodes and SOA). Finally we present the static and dynamic characteristics of our receiver and we compare its performances with the state of the art. This thesis demonstrates the feasibility of a preamplified receiver using a SOA in buried InP technology with a record of reponsivity of 5 A/W. This represents a gain of 12.5 dB compared to an ideal coherent receiver and a gain of 15,5 dB compared to the state of the art. In addition, the consumption generated by this integration remains very low (240 mW). Finally, we have demonstrated a 32 Gbauds demodulation with a Q factor of 14dB and the 40 GHz bandwidth of our photodiodes is compatible with 56 Gbauds applications. It can be improved for 100 Gbauds applications by reducing the size of our photodiodes. This thesis opens the way for a new preamplified coherent receiver for 400 Gbit/s applications
44
Chong, Harold Meng Hoon. "Photonic crystal and photonic wire structures for photonic integrated circuits." Thesis, University of Glasgow, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.407719.
45
Rodrigues, Carla Iolanda Costa. "Photonic integrated circuits for NG-EPON." Master's thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/22732.
Abstract:
Mestrado em Engenharia Electrónica e TelecomunicaçõesAlong with privacy and security, the growth of demand from the consumer for higher bandwidth presents one of the most important modern challenges in telecommunications infrastructures. The researchers were encouraged to nd not only e cient but also the economically viable solutions capable of meeting the growing needs of the consumer. Optical communications are the way that can accompany this growth. The Passive Optical Network (PON) is an architecture that shares the ber bandwidth among several users. There has been a constant study under this topic for the purpose of using all the ber abilities and to nd new solutions to keep the access network simple. Photonic Integrated Circuits (PICs) are a technology that emerged to help the complexity of the hardware that exists nowadays. It is a single chip capable of integrating numerous optical components, which leads to a reduced complexity, size and power consumption. These are the important characteristics that make the PICs a powerful tool to use in several applications. This dissertation presents a monolithic PIC transceiver in the context of Next Generation of Ethernet Passive Optical Network (NG-EPON) which aims to design and implement integrated optical circuits for future access networks. The transceiver architecture is able to be used as an Optical Network Unit (ONU) with a 4 channels approach for 100 Gb/s solutions. The present work contributed for the FUTPON project supported by P2020.
Em par com a privacidade e segurança, a crescente procura do consumidor por maiores larguras de banda apresenta um dos mais importantes desafios modernos das infraestruturas de telecomunicações. Esta procura incentiva assim a investigação de novas soluções não são eficientes, mas também economicamente viáveis, capazes de satisfazer as crescentes necessidades do consumidor. As comunicações óticas apresentam ser o meio apropriado para acompanhar este crescimento. A Rede Óptica Passiva (PON) e uma arquitectura usada para distribuição de fibra ótica ate ao consumidor final. Esta tecnologia permite dividir a largura de banda de uma única fibra por diferentes clientes. Tem havido um estudo constante no âmbito deste tópico para conseguir tirar máximo partido das capacidades da fibra e de modo a encontrar novas soluções para tornar este método mais simples. Os Circuitos Oticos Integrados (PIC) sao uma tecnologia que surge para ajudar na complexidade do hardware existente hoje em dia. Consiste num único chip capaz de integrar vários componentes óticos, o que leva a uma diminuição da complexidade, tamanho e redução do consumo de energia. Estas características fazem com que seja uma tecnologia vantajosa para uso em diferentes aplicações. O desenho e a implementação da arquitectura do transrecetor em formato PIC no contexto da Next Generation of Ethernet Passive Optical Network (NG-EPON), e o principal objectivo desta dissertação onde visa o desenvolvimento circuitos óticos integrados para redes oticas de acesso futuras. Esta arquitectura devera ser utilizada como Optical Network Unit (ONU) contendo 4 canais para atingir 100 Gb/s. Este trabalho contribuiu para o projecto FUTPON suportado pelo P2020.
46
Lamponi, Marco. "Lasers inp sur circuits silicium pour applications en telecommunications." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00769402.
Abstract:
La photonique du silicium a connu un développent massif pendant les dix derniers années. Presque toutes les briques technologiques de base ont été réalisées et ont démontrées des performances remarquables. Cependant, le manque d'une source laser intégrée en silicium a conduit les chercheurs à développer de composants basés sur l'intégration entre le silicium et les matériaux III-V.Dans cette thèse je décris la conception, la fabrication et la caractérisation des lasers hybrides III-V sur silicium basés sur cette intégration. Je propose un coupleur adiabatique qui permet de transférer intégralement le mode optique du guide silicium au guide III-V. Le guide actif III-V au centre du composant fourni le gain optique et les coupleurs, des deux cotés, assurent le transfert de la lumière dans les guides silicium.Les lasers mono longueur d'onde sont des éléments fondamentaux des communications optiques. Je décris les différentes solutions permettant d'obtenir un laser mono-longueur d'onde hybride III-V sur silicium. Des lasers mono longueur d'onde ont été fabriqués et caractérisés. Ils démontrent un seuil de 21 mA, une puissance de sortie qui dépasse 10 mW et une accordabilité de 45 nm. Ces composants représentent la première démonstration d'un laser accordable hybride III-V sur silicium.
47
Leu, Jonathan Chung. "Integrated silicon photonic circuit simulation." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/120431.
Abstract:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2018.Cataloged from PDF version of thesis.
Includes bibliographical references (pages 97-111).
Integrated silicon photonics is an exciting emerging technology, utilizing the high bandwidth and high timing resolution that optics provides in many applications. To maximize the benefits of these optical-electrical systems, tight integration of the electronic and photonic components are necessary. In light of this need, we've developed a Cadence toolkit library written in VerilogA that simulates both the amplitude and phase of optical signals, as well as optical-electrical interactions. The runtime is greatly improved by simulating the optical signal relative to a reference frequency, which is chosen to be close to the frequency range of interest. We have identified a set of fundamental photonic components, and described each at the physical level, such that the characteristics of a composite device will be created organically. We show that the simulated results match analytic solutions for simple devices like resonant ring filters and more complicated devices like single sideband modulators. Adding to this toolkit library, we then discuss devices that are required for handling more special cases, such as chromatic dispersion in the waveguide, and non-ideal optoelectronic devices. Finally, we demonstrate simulations of complicated systems such as WDM links and Pound-Drever-Hall loops. This will allow designers to unify our photonic device designing and modeling environment with circuit and system level design, giving us greater insight on the trade-offs that take place between the two realms.
by Jonathan Leu.
Ph. D.
48
Williams, Ryan Daniel. "Photonic integrated circuits for optical logic applications." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/42025.
Abstract:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2007.This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references.
The optical logic unit cell is the photonic analog to transistor-transistor logic in electronic devices. Active devices such as InP-based semiconductor optical amplifiers (SOA) emitting at 1550 nm are vertically integrated with passive waveguides using the asymmetric twin waveguide technique and the SOAs are placed in a Mach-Zehnder interferometer (MZI) configuration. By sending in high-intensity pulses, the gain characteristics, phase-shifting, and refractive indices of the SOA can be altered, creating constructive or deconstructive interference at the MZI output. Boolean logic and wavelength conversion can be achieved using this technique, building blocks for optical switching and signal regeneration. The fabrication of these devices is complex and the fabrication of two generations of devices is described in this thesis, including optimization of the mask design, photolithography, etching, and backside processing techniques. Testing and characterization of the active and passive components is also reported, confirming gain and emission at 1550 nm for the SOAs, as well as verifying evanescent coupling between the active and passive waveguides. In addition to the vertical integration of photonic waveguides, Esaki tunnel junctions are investigated for vertical electronic integration. Quantum dot formation and growth via molecular beam epitaxy is investigated for emission at the technologically important wavelength of 1310 nm. The effect of indium incorporation on tunnel junctions is investigated. The tunnel junctions are used to epitaxially link multiple quantum dot active regions in series and lasers are designed, fabricated, and tested.
by Ryan Daniel Williams.
Ph.D.
49
Franco, Eduardo Vala. "Photonic integrated circuits for next generation PONs." Master's thesis, Universidade de Aveiro, 2017. http://hdl.handle.net/10773/23473.
Abstract:
Mestrado em Engenharia Eletrónica e TelecomunicaçãoWe are living in a time where communications became essential for most of our lives, whether it's in the business world, or in our own homes. The increasing need of higher bandwidth inhibits other networks other than optical ber based ones. Nowadays communications are responsible for a substantial percentage of our energetic footprint, hence Passive Optical Network(PON) are a strong contender for the next step of network implementation. These networks present a low energy consumption because between the transmitter and the receiver the signal stays in the optical domain. Although the increasing needs of bandwidth is almost across the communication world, certain services/identities need more bandwidth whether is download or upload. It's easy to understand that di erent consumers have unique needs. It's necessary to develop an architecture that serves all the costumers, in other words, there is a need for a network that provides high bitrate tra c to the users that needs it but also a network that serves the low end user that is not interested in this increase of bandwidth and therefore price in ation. There is today technologies yet to be widely implemented like NG-PON2 that were not implemented in a large scale because they dont represent a nancial return to the telecom operators simply because there is not enough user that requires the high bandwidth delivered by NG-PON2. It's necessary to nd a solution that includes not only the modern technologies but also the already implemented ones. With the objective of nding a solution for the problems mentioned before, this dissertation has the objective of designing a Photonic Integrated Circuit(PIC) that aims to be a transceiver of a Multitech Network that will be composed by the following technologies: Video-Overlay, XG-PON e NG-PON2. This dissertation presents an approach on Passive Optical Networks( PON) and the standards of the said technologies as well as a study of the components needed to assemble the transceiver using the programs ASPIC and VPI Photonics . In the end, there will be presented an architecture for the transceiver to be used in a Optical Network Unit(ONU), and the respective mask Layout.
Vivemos numa época em que as comunicações se tornaram essenciais para grande parte da nossa vida, seja no mundo empresarial, seja nas nossas habitações. A crescente necessidade de aumento de largura de banda inviabiliza outras redes que não baseadas em braotica. Actualmente as comunicações são responsáveis por uma percentagem substancial dos nossos gastos energéticos, justamente por este facto Passive Optical Networks(PON) sao as principais candidatas ao próximo passo no desenvolvimento de redes. Estas apresentam menor consumo energético, pois entre o emissor e o receptor todo o sinal permanece no domínio óptico. Apesar da necessidade de largura de banda estar a aumentar de um modo transversal no mundo das telecomunicações, certos serviços/entidades necessitam de maiores velocidades tanto em termos de download como em termos de upload. E então fácil de perceber que consumidores diferentes têm necessidades diferentes. E necessário encontrar uma arquitectura que agrade a quem necessita de maiores larguras de banda mas também a quem não necessita de um aumento significativo e que, não está disposto a pagar por este. Existem neste momento tecnologias que ainda não foram implementadas em grandes escalas, como o caso de Next Generation Passive Optical Network (NG-PON2), porque não simbolizam um retorno financeiro para as grande operadores, uma vez que o número de potenciais consumidores de tais velocidades ainda não e substancialmente grande. E necessário encontrar uma solução que não so englobe as novas tecnologias como também as já existentes. Com o objectivo de se encontrar um solução para os problemas acima referidos, este trabalho assenta na elaboração de um Circuito integrado fotonico que visa ser um transrecetor de uma arquitetura multi-tecnologia em que irão ser incorporadas tecnologias como Video-Overlay, 10 Gigabit-capable Passive Optical Network (XG-PON) e NG-PON2. Esta dissertação apresenta uma abordagem as Redes Oticas Passivas e também um estudo feito aos componentes usados no transreceptor usando os programas Aspic e VPI Photonics . Porém ser a apresentado o desenho final do transreceptor que ser a usado numa Optical Network Unit(ONU).
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Mahendra, Andri. "Electronic Photonic Integrated Circuits and Control Systems." Thesis, The University of Sydney, 2017. http://hdl.handle.net/2123/17806.
Abstract:
Photonic systems can operate at frequencies several orders of magnitude higher than electronics, whereas electronics offers extremely high density and easily built memories. Integrated photonic-electronic systems promise to combine advantage of both, leading to advantages in accuracy, reconfigurability and energy efficiency. This work concerns of hybrid and monolithic electronic-photonic system design. First, a high resolution voltage supply to control the thermooptic photonic chip for time-bin entanglement is described, in which the electronics system controller can be scaled with more number of power channels and the ability to daisy-chain the devices. Second, a system identification technique embedded with feedback control for wavelength stabilization and control model in silicon nitride photonic integrated circuits is proposed. Using the system, the wavelength in thermooptic device can be stabilized in dynamic environment. Third, the generation of more deterministic photon sources with temporal multiplexing established using field programmable gate arrays (FPGAs) as controller photonic device is demonstrated for the first time. The result shows an enhancement to the single photon output probability without introducing additional multi-photon noise. Fourth, multiple-input and multiple-output (MIMO) control of a silicon nitride thermooptic photonic circuits incorporating Mach Zehnder interferometers (MZIs) is demonstrated for the first time using a dual proportional integral reference tracking technique. The system exhibits improved performance in term of control accuracy by reducing wavelength peak drift due to internal and external disturbances. Finally, a monolithically integrated complementary metal oxide semiconductor (CMOS) nanophotonic segmented transmitter is characterized. With segmented design, the monolithic Mach Zehnder modulator (MZM) shows a low link sensitivity and low insertion loss with driver flexibility.