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Relevant bibliographies by topics / Insulating-To-Metal transition

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Academic literature on the topic 'Insulating-To-Metal transition'

Author: Grafiati

Published: 14 December 2024

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Journal articles on the topic "Insulating-To-Metal transition"

1

CHEN, DONG-MENG, and LIANG-JIAN ZOU. "ORBITAL INSULATORS AND ORBITAL ORDER–DISORDER INDUCED METAL–INSULATOR TRANSITION IN TRANSITION-METAL OXIDES." International Journal of Modern Physics B 21, no. 05 (2007): 691–706. http://dx.doi.org/10.1142/s0217979207036618.

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The role of orbital ordering on metal–insulator transition in transition-metal oxides is investigated by the cluster self-consistent field approach in the strong correlation regime. A clear dependence of the insulating gap of single-particle excitation spectra on the orbital order parameter is found. The thermal fluctuation drives the orbital order–disorder transition, diminishes the gap and leads to the metal–insulator transition. The unusual temperature dependence of the orbital polarization in the orbital insulator is also manifested in the resonant X-ray scattering intensity.

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Pustogow, A., A. S. McLeod, Y. Saito, D. N. Basov, and M. Dressel. "Internal strain tunes electronic correlations on the nanoscale." Science Advances 4, no. 12 (2018): eaau9123. http://dx.doi.org/10.1126/sciadv.aau9123.

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In conventional metals, charge carriers basically move freely. In correlated electron materials, however, the electrons may become localized because of strong Coulomb interactions, resulting in an insulating state. Despite considerable progress in the last decades, elucidating the driving mechanisms that suppress metallic charge transport, the spatial evolution of this phase transition remains poorly understood on a microscopic scale. Here, we use cryogenic scanning near-field optical microscopy to study the metal-to-insulator transition in an electronically driven charge-ordered system with a

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ASOKAMANI, R., CH U. M. TRINADH, G. PARI, and S. NATARAJAN. "INSULATOR-TO-METAL TRANSITION IN LaRhO3 UNDER HIGH PRESSURE." Modern Physics Letters B 09, no. 11n12 (1995): 701–9. http://dx.doi.org/10.1142/s0217984995000644.

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The band structure calculations of perovskite transition metal compound LaRhO 3 performed using 'tight binding linear muffin tin orbital' (TB-LMTO) method within local density approximation (LDA) under ambient and high pressures are reported here. Our calculations are able to successfully explain the insulating nature of the system and the insulator-to-metal transition (IMT) is observed for the reduced volume of 0.90. The first electronic structure calculation reported here for LaRhO 3 enables us to compare it with that of LaCoO 3 which brings out the role played by the d bands. These studies

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Driscoll, D. C., M. Hanson, C. Kadow, and A. C. Gossard. "Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 4 (2001): 1631. http://dx.doi.org/10.1116/1.1388211.

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Liang, Yongcheng, Ping Qin, Zhiyong Liang, Lizhen Zhang, Xun Yuan, and Yubo Zhang. "Identification of a monoclinic metallic state in VO2 from a modified first-principles approach." Modern Physics Letters B 33, no. 12 (2019): 1950148. http://dx.doi.org/10.1142/s0217984919501483.

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Metal-insulator transition (MIT) underlies many remarkable and technologically important phenomena in VO2. Even though its monoclinic structure had before been the reserve of the insulating state, recent experiments have observed an unexpected monoclinic metallic state. Here, we use a modified approach combining first-principles calculations with orbital-biased potentials to reproduce the correct stability ordering and electronic structures of different phases of VO2. We identify a ferromagnetic monoclinic metal that is likely to be the experimentally observed mysterious metastable state. Furt

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Allain, Adrien, Zheng Han, and Vincent Bouchiat. "Electrical control of the superconducting-to-insulating transition in graphene–metal hybrids." Nature Materials 11, no. 7 (2012): 590–94. http://dx.doi.org/10.1038/nmat3335.

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Lee, Seung-Yong, Hyuneui Lim, Gyoung-Rin Choi, Jan-Di Kim, Eun-Kyung Suh, and Sang-Kwon Lee. "Metal-to-Insulating Transition of Single Polyaniline (PANI) Nanowire: A Dedoping Effect." Journal of Physical Chemistry C 114, no. 27 (2010): 11936–39. http://dx.doi.org/10.1021/jp101424b.

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Morrow, Ryan, and Patrick Woodward. "Competing Superexchange Interactions in Double Perovskite Osmates." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C1366. http://dx.doi.org/10.1107/s2053273314086331.

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Double perovskites, A2BB'O6, containing mixed transition metal ions have exhibited numerous desirable properties such as colossal magnetoresistance, half metallic transport, and high temperature ferrimagnetism. However, a predictive understanding of the superexchange mechanisms which control the magnetism of these materials when they are insulating and B is 3d transition metal and B' is a 4d or 5d transition metal has remained elusive. In this work, a number of insulating double perovskite osmates, A2BOsO6 (A=Sr,Ca,La; B=Cr,Fe,Co,Ni) have been chosen and studied using magnetometry, specific he

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Cohen, Oded, and Zvi Ovadyahu. "1/f NOISE NEAR THE METAL-INSULATOR TRANSITION." International Journal of Modern Physics B 08, no. 07 (1994): 897–903. http://dx.doi.org/10.1142/s0217979294000440.

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The 1/f noise level in polycrystalline indium oxide thin films and of zinc oxide accumulation layers is found to be much higher than that usually observed in metals. A systematic study of the flicker noise properties in these systems reveals a correlation between the 1/f noise magnitude and the proximity of the system to the insulating phase. In fact, the noise appears to increase dramatically close to the Anderson transition but when the average transport properties exhibited by the system are still diffusive. For static disorder that exceeds the critical value characterized by KFl≃1 the syst

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Jager, Marieke F., Christian Ott, Peter M. Kraus, et al. "Tracking the insulator-to-metal phase transition in VO2with few-femtosecond extreme UV transient absorption spectroscopy." Proceedings of the National Academy of Sciences 114, no. 36 (2017): 9558–63. http://dx.doi.org/10.1073/pnas.1707602114.

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Coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadiumM2,3edge is used to track the insulator-to-metal phase transition in VO2. This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probe

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Dissertations / Theses on the topic "Insulating-To-Metal transition"

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Tothill, J. N. "An investigation into the magnetic properties of certain Mott insulating transition metal compounds close to delocalization." Thesis, University of Bristol, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.376619.

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Alzate, Banguero Melissa. "Towards neuromorphic computing on quantum many-body architectures : VO2 transition dynamics." Electronic Thesis or Diss., Université Paris sciences et lettres, 2024. http://www.theses.fr/2024UPSLS021.

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Alors que les exigences en matière d'IA augmentent, de nouveaux paradigmes informatiques deviennent essentiels. Les architectures traditionnelles de von Neumann peinent à répondre aux exigences intensives de l'IA. L'informatique neuromorphique, inspirée par le cerveau, intègre traitement et mémoire pour une computation plus rapide et efficace, idéale pour des applications d'IA comme l'apprentissage profond et la reconnaissance de formes. Les matériaux clés pour l'informatique neuromorphique incluent les synaptors et les neuristors. Les memristors, des mémoires non volatiles fabriquées à partir

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Book chapters on the topic "Insulating-To-Metal transition"

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Cao, Gang, and Lance E. DeLong. "Introduction." In Physics of Spin-Orbit-Coupled Oxides. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.003.0001.

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The fundamental and technological importance of transition metal oxides, and the relationship of the present work to previous monographs dealing with transition metal oxides are reviewed. The relatively abundant 3d-transition metal oxides are contrasted with the rarer 4d- and 5d-transition metal oxides that exhibit a unique interplay between spin-orbit, exchange, crystalline electric field and Coulomb correlations. The combined effect of these fundamental interactions yields peculiar quantum states and empirical trends that markedly differ from those of their 3d counterparts. General trends in the electronic structure are related to generalized phase diagrams of the magnetic and insulating ground states. The intriguing absence of experimental evidence for predicted topological states and superconductivity in these materials are discussed.

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Kamimura, Hiroshi, and Hideo Aoki. "Electron-Electron Interactions In Impurity Bands." In Physics of Interacting Electrons in Disordered Systems. Oxford University PressOxford, 1990. http://dx.doi.org/10.1093/oso/9780198520238.003.0004.

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Abstract As we have seen in Chapter 3, the metal-non-metal transition in doped semiconductors has attracted renewed interest in the light of the localization problem. We mentioned in Chapter 1 that recent theoretical work in the field has followed two main lines of approach. The first approach starts from the nearly free electron picture in the metallic regime and then covers the effect of localization due to disorder. The second line of approach, on the other hand, covers the insulating phase and starts from the Anderson localized regime itself. This approach, which describes the system by a tight-binding picture, is particularly suitable for the donor concentration region where the localization length is of the order of average donor separation. Thus these two approaches for disordered systems may be compared with the two complementary approaches for perfect crystals, i.e. the Bloch electron approach and the tight-binding approach. The final goal of both approaches is of course the same—an accurate description of the metal-non-metal transition.

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Krishnaprasad, Adithi, and Tania Roy. "Memory Devices and Artificial Synapses with 2D Materials." In Advanced Memory Technology. Royal Society of Chemistry, 2023. http://dx.doi.org/10.1039/bk9781839169946-00373.

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Two-dimensional (2D) materials have gained prominence as memory devices and in next generation computing platforms, such as neuromorphic computing. Semi-metallic graphene is used as electrodes in memory devices with reduced power consumption. Insulating and semiconducting 2D materials exhibit memristive behavior, thus finding use in random access memory and as analog memory for artificial synapses. The switching in memory devices with 2D materials is due to the formation of localized conductive filaments, due to the unique interface between the 2D material and the metal electrode, or by means of phase transition. Synaptic devices are realized with ferroelectric 2D materials. Charge trapping in transistors and floating gate field effect transistors is used to realize non-volatile memory. The large family of 2D materials offers a variety of options to realize memristive stacks and transistors for memory and neuromorphic computing.

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Conference papers on the topic "Insulating-To-Metal transition"

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Tadokoro, Yuzuru, Keisuke Takano, and Masanori Hangyo. "Transition from insulating to conducting states induced by intense terahertz pulses in aggregate of metal particles." In 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2014. http://dx.doi.org/10.1109/irmmw-thz.2014.6956363.

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Chervinskii, Semyon, Ibrahim Issah, Markus Lahikainen, et al. "Humidity- and Temperature- Stimuli-Responsive Tunable Metal-Hydrogel-Metal Reflective Filter." In CLEO: QELS_Fundamental Science. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.fth5b.6.

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Our work demonstrates a tunable reflectance filter based on a metal-hydrogel-metal structure responsive to humidity and temperature. The filter employs a hydrogel as an insulating layer. Swelling/deswelling and the volume phase transition of the hydrogel allow continuous reversible humidity- and/or temperature-induced tuning of the optical resonance.

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Chang, Ruxia, Desong Fan, and Qiang Li. "Research on Thermal Properties of Insulator-Metal Transition at Room Temperature in Sm1-xCaxMnO3." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-3963.

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Abstract The high-purity electron-doped manganites Sm1-xCaxMnO3 nanopowder were prepared by the solid-state reaction method, then the bulk material were obtained through granulation, molding, calcining, grinding and polishing. SCMO nanoparticles with 200 nm were obtained by the sol-gal process. The phase and surface morphology of these materials were characterized by X-ray diffraction and Scanning electron microscope and other experiments. The variable resistivity of the bulk materials were measured by two-wire method in the temperature range of 100–420K. The thermal conductivity was measured

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Chain, Elizabeth E. "Optical properties of vanadium oxide films." In OSA Annual Meeting. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.ms2.

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Several oxides of vanadium undergo a transition from a semiconductor or insulating state to a metal phase at a critical temperature. VO2 undergoes this transition near 68°C, while V2O5 undergoes a similar phase transition near 257°C, and V2O3 undergoes a similar transition near 150 K. During the transition a change in oxide crystal structure is accompanied by large changes in electrical and optical behavior. Thin films of vanadium oxides are capable of reversibly switching from the semiconductor to the metallic state at high speeds with high spatial resolution. Therefore, these oxides have pot

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