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1

Chen, Zhigao, Baigeng Wang, D. Y. Xing, and Jian Wang. "A spin injector." Applied Physics Letters 85, no. 13 (September 27, 2004): 2553–55. http://dx.doi.org/10.1063/1.1793335.

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2

Chi, Feng, Xiao-Ning Dai, and Lian-Liang Sun. "A quantum dot spin injector with spin bias." Applied Physics Letters 96, no. 8 (February 22, 2010): 082102. http://dx.doi.org/10.1063/1.3327807.

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3

Egelhoff Jr., W. F. "Spin Polarization of Injected Electrons." Science 296, no. 5571 (May 17, 2002): 1195a—1195. http://dx.doi.org/10.1126/science.296.5571.1195a.

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4

Mi, Yilin, Ming Zhang, Hongrui Guo, and Hui Yan. "Spin transport in a spin-injected organic semiconductor system." Current Applied Physics 10, no. 6 (November 2010): 1448–51. http://dx.doi.org/10.1016/j.cap.2010.05.011.

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5

Giazotto, F., and F. S. Bergeret. "Quantum interference hybrid spin-current injector." Applied Physics Letters 102, no. 16 (April 22, 2013): 162406. http://dx.doi.org/10.1063/1.4802953.

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6

Bhat, R. D. R., and J. E. Sipe. "Optically Injected Spin Currents in Semiconductors." Physical Review Letters 85, no. 25 (December 18, 2000): 5432–35. http://dx.doi.org/10.1103/physrevlett.85.5432.

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7

WANG, Y., A. P. LIU, J. BAO, X. G. XU, and Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR." Modern Physics Letters B 22, no. 16 (June 30, 2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.

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In this paper, large spin polarization and magnetoconductance in a ferromagnet (FM)/ferromagnetic insulator (FI)/two-dimensional electron gas (2DEG)/non-magnetic insulator (I)/FM hybrid structure are theoretically predicted by introducing a spin-filtering injector. In the framework of coherent tunneling model, the electron transmission probability, spin polarization and magnetoconductance in the hybrid structure all oscillate with the electron density within the 2DEG channel. A complete single-mode spin injection would be realized by designing a well-defined geometry to adjust the competition between the spin-dependent tunneling of the conductive electrons and spin-filtering effect of the FI barrier.
8

Battiato, M. "Spin polarisation of ultrashort spin current pulses injected in semiconductors." Journal of Physics: Condensed Matter 29, no. 17 (March 27, 2017): 174001. http://dx.doi.org/10.1088/1361-648x/aa62de.

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9

Zholud, A., and S. Urazhdin. "Microwave generation by spin Hall nanooscillators with nanopatterned spin injector." Applied Physics Letters 105, no. 11 (September 15, 2014): 112404. http://dx.doi.org/10.1063/1.4896023.

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10

Zozoulenko, I. V., and M. Evaldsson. "Quantum antidot as a controllable spin injector and spin filter." Applied Physics Letters 85, no. 15 (October 11, 2004): 3136–38. http://dx.doi.org/10.1063/1.1804249.

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11

Ryu, Kyung Sik, Chun Kun Park, Moon Chan Kim, and Joon Ki Kang. "Dose-dependent epidural leakage of polymethylmethacrylate after percutaneous vertebroplasty in patients with osteoporotic vertebral compression fractures." Journal of Neurosurgery: Spine 96, no. 1 (January 2002): 56–61. http://dx.doi.org/10.3171/spi.2002.96.1.0056.

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Object. The use of polymethylmethacrylate (PMMA) cement by percutaneous injection in cases requiring vertebroplasty provides pain relief in the treatment of osteoporotic vertebral compression fractures. A retrospective study was performed to assess what caused PMMA cement to leak into the epidural space and to determine if this leakage caused any changes in its therapeutic benefits. Methods. Polymethylmethacrylate was injected into 347 vertebral compression fractures in 159 patients. The cement leaked into the epidural space in 92 (26.5%) of 347 treated vertebrae in 64 (40.3%) of the 159 patients, as demonstrated on postoperative computerized tomography scanning. Epidural leakage of PMMA cement occurred more often when injected above the level of T-7 (p = 0.001) than below. The larger the volume of PMMA injected the higher the incidence of epidural leakage (p = 0.03). Using an injector also increased epidural leakage (p = 0.045). The position of the needle tip within the vertebral body and the pattern of venous drainage did not affect epidural leakage of the cement. Leakage of PMMA into the epidural space reduced the pain relief expected after vertebroplasty. The immediate postoperative visual analog scale scores were higher (and therefore reflective of less pain relief) in patients in whom epidural PMMA leakage occurred (p = 0.009). Three months postoperatively, the authors found the highest number of patients presenting with pain relief, including those in the group with epidural leakage, and at this follow-up stage there were no significant differences between the two groups. Conclusions. The authors found that epidural leakage of PMMA after percutaneous vertebroplasty was dose dependent. The larger amount of injected PMMA, the higher the incidence of leakage. Injecting vertebral levels above T-7 also increased the incidence of epidural leakage. Epidural leakage of PMMA may attenuate only the immediate therapeutic effects of vertebroplasty.
12

Pfeiffer, Alexander, Shaojie Hu, Robert M. Reeve, Alexander Kronenberg, Martin Jourdan, Takashi Kimura, and Mathias Kläui. "Spin currents injected electrically and thermally from highly spin polarized Co2MnSi." Applied Physics Letters 107, no. 8 (August 24, 2015): 082401. http://dx.doi.org/10.1063/1.4929423.

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13

Koo, H. C., J. H. Kwon, J. Eom, J. Chang, S. H. Han, and M. Johnson. "Control of Spin Precession in a Spin-Injected Field Effect Transistor." Science 325, no. 5947 (September 17, 2009): 1515–18. http://dx.doi.org/10.1126/science.1173667.

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14

Miah, Muhammad Idris, Md Torikul Islam, Shahid Atiq, Iwan Kityk, Evan Gray, Nazia Chawdhury, Mohammed Haque Chowdhury, and AA Mamun. "A spin current detecting device working in the drift-diffusion and degenerate regimes." INDONESIAN JOURNAL OF APPLIED PHYSICS 14, no. 1 (May 2, 2024): 23. http://dx.doi.org/10.13057/ijap.v14i1.83642.

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<p>A semiconductor-based device working in the spin drift-diffusion regime and for probing the injected or generated spin current was considered. The electric field effects on spin transport were analysed. A drift-diffusion equation for spin density was derived and contributions to the spin current were examined. By referring to the techniques of the spin current injection and generation, expressions for the spin current and spin-induced transverse Hall voltage arising from the injected or generated spin-polarized current were derived. The spin current and Hall voltage in dependences of the external electric field and temperature in the degenerate regime were studied. The device operated on the basis of with no external magnetic fields gives a voltage probe of the spin-induced Hall effect. Finally, a way of enhancing the spin current was explored.</p>
15

Slobodskyy, A., C. Gould, T. Slobodskyy, G. Schmidt, L. W. Molenkamp, and D. Sánchez. "Resonant tunneling diode with spin polarized injector." Applied Physics Letters 90, no. 12 (March 19, 2007): 122109. http://dx.doi.org/10.1063/1.2715120.

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16

Homayounfar, A., and M. J. Adams. "Spin polarised properties of optically injected VCSELs." physica status solidi (c) 4, no. 2 (February 2007): 604–6. http://dx.doi.org/10.1002/pssc.200673277.

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17

Höink, V., J. W. Lau, and W. F. Egelhoff. "Micromagnetic simulations of a dual-injector spin transfer torque operated spin logic." Applied Physics Letters 96, no. 14 (April 5, 2010): 142508. http://dx.doi.org/10.1063/1.3373588.

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18

Ustinov, V. V., N. G. Bebenin, and I. I. Lyapilin. "Spin resonance associated with itinerant electrons affected by the injected spin current." JETP Letters 99, no. 6 (May 2014): 327–28. http://dx.doi.org/10.1134/s0021364014060125.

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19

Nishizawa, Nozomi, Kazuhiro Nishibayashi, and Hiro Munekata. "Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes." Proceedings of the National Academy of Sciences 114, no. 8 (February 7, 2017): 1783–88. http://dx.doi.org/10.1073/pnas.1609839114.

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We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP whenJ> 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.
20

Harii, K., Z. Qiu, T. Iwashita, Y. Kajiwara, K. Uchida, K. Ando, T. An, Y. Fujikawa, and E. Saitoh. "Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film: Spin Current Termination." Key Engineering Materials 508 (March 2012): 266–70. http://dx.doi.org/10.4028/www.scientific.net/kem.508.266.

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A Spin Current Generated by Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film Is Calculated Based on the Spin Pumping Theory and the Standard Spin Diffusion Equation. By Attaching the Spin-Sink Layer, the Injected Spin Current Is Drastically Enhanced when the Interlayer Thickness Is Shorter than the Spin Diffusion Length of the Interlayer. We Also Provided the Formula of the Charge Current which Is Induced from the Pumped Spin Current via the Inverse Spin-Hall Effect.
21

Tao, Bingshan, Philippe Barate, Xavier Devaux, Pierre Renucci, Julien Frougier, Abdelhak Djeffal, Shiheng Liang, et al. "Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence." Nanoscale 10, no. 21 (2018): 10213–20. http://dx.doi.org/10.1039/c8nr02250j.

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22

HU, DONG-SHENG, and SHI-JIE XIONG. "SPIN DYNAMICS OF MOLECULAR MAGNET INTERACTING WITH INJECTED ELECTRONS." International Journal of Modern Physics B 17, no. 07 (March 20, 2003): 1117–25. http://dx.doi.org/10.1142/s0217979203015930.

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We investigate the time evolution of the local spin in a molecular magnet interacting with injected electrons. By solving the time-dependent Schrödinger equations, we find that the variation in the magnetization of the molecular magnet and the electron spin crucially depends on the strength of the exchange interaction. We calculate the time evolution of the entanglement between the injected electron and the molecular magnet. It is found that the entanglement oscillates in time and the oscillations are closely related to the changes in the spins. The study provides an estimation of the feasibility of the encoding and read-out by using the polarization of the molecular magnets and the injected electrons.
23

Miclaus, Calin. "Control of Injected Spin Reduces Semiconductor Laser Threshold." MRS Bulletin 28, no. 7 (July 2003): 470. http://dx.doi.org/10.1557/mrs2003.134.

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24

Vurgaftman, I., M. Holub, B. T. Jonker, and J. R. Meyer. "Estimating threshold reduction for spin-injected semiconductor lasers." Applied Physics Letters 93, no. 3 (July 21, 2008): 031102. http://dx.doi.org/10.1063/1.2957656.

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25

Foros, J., G. Woltersdorf, B. Heinrich, and A. Brataas. "Scattering of spin current injected in Pd(001)." Journal of Applied Physics 97, no. 10 (May 15, 2005): 10A714. http://dx.doi.org/10.1063/1.1853131.

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26

Haidar, S. M., R. Iguchi, A. Yagmur, J. Lustikova, Y. Shiomi, and E. Saitoh. "Reducing galvanomagnetic effects in spin pumping measurement with Co75Fe25 as a spin injector." Journal of Applied Physics 117, no. 18 (May 14, 2015): 183906. http://dx.doi.org/10.1063/1.4921359.

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27

Sung, S. J., J. W. Yang, P. R. Lee, J. G. Kim, M. T. Ryu, H. M. Park, G. Lee, et al. "Spin-induced band modifications of graphene through intercalation of magnetic iron atoms." Nanoscale 6, no. 7 (2014): 3824–29. http://dx.doi.org/10.1039/c3nr04178f.

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28

Ведь, М. В., М. В. Дорохин, В. П. Лесников, А. В. Кудрин, П. Б. Дёмина, А. В. Здоровейщев, Д. А. Павлов, Ю. В. Усов, В. Е. Милин, and Ю. А. Данилов. "Циркулярно поляризованная электролюминесценция спиновых светодиодов c ферромагнитным инжектором (In,Fe)Sb." Письма в журнал технической физики 46, no. 14 (2020): 17. http://dx.doi.org/10.21883/pjtf.2020.14.49660.18313.

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The possibility of using a diluted magnetic semiconductor (In,Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. We studied the luminescent characteristics, as well as the temperature dependence of the circular polarization degree of a spin LED electroluminescence with an (In,Fe)Sb injector.
29

Ariki, Taisei, Tatsuya Nomura, Kohei Ohnishi, and Takashi Kimura. "Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel." Journal of Physics D: Applied Physics 55, no. 9 (November 18, 2021): 095302. http://dx.doi.org/10.1088/1361-6463/ac34aa.

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Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.
30

Караштин, Е. А. "Инжекция неравновесного спина в геликоидальный ферромагнетик." Физика твердого тела 62, no. 9 (2020): 1482. http://dx.doi.org/10.21883/ftt.2020.09.49773.05h.

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The properties of spin injection into a helicoidal ferromagnet are studied. Two possible ways of spin injection are investigated: injection of spin-polarized electric current and effect of spin pumping. In the case when helicoid axis is perpendicular to the boundary through which the spin is injected the conditions of spin injection into a pre-defined spin band are determined. In the case when helicoid axis is parallel to the boundary the appearance of effect similar to topological Hall effect is shown. In the latter geometry, spin pumping leads to the exchange conversion of spin current into electric current that flows parallel to the helicoid axis.
31

Lyapilin, Igor, and Mikhail Okorokov. "THE INFLUENCE OF “INJECTED” AND “THERMAL” MAGNONS ON A SPIN WAVE CURRENT AND DRAG EFFECT IN HYBRID STRUCTURES." EPJ Web of Conferences 185 (2018): 01022. http://dx.doi.org/10.1051/epjconf/201818501022.

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The formation of the two: injected and thermally excited, different in energies magnon subsystems and the influence of its interaction with phonons and between on drag effect under spin Seebeck effect conditions in the magnetic insulator part of the metal/ferromagnetic insulator/metal structure is studied. The analysis of the macroscopic momentum balance equations of the systems of interest conducted for different ratios of the drift velocities of the magnon and phonon currents show that the injected magnons relaxation on the thermal ones is possible to be dominant over its relaxation on phonons. This interaction will be the defining in the forming of the temperature dependence of the spin-wave current under spin Seebeck effect conditions, and inelastic part of the magnon-magnon interaction is the dominant spin relaxation mechanism.
32

Salis, G., R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, and J. S. Harris. "Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector." Applied Physics Letters 87, no. 26 (December 26, 2005): 262503. http://dx.doi.org/10.1063/1.2149369.

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33

Holub, M., J. Shin, S. Chakrabarti, and P. Bhattacharya. "Electrically injected spin-polarized vertical-cavity surface-emitting lasers." Applied Physics Letters 87, no. 9 (August 29, 2005): 091108. http://dx.doi.org/10.1063/1.2035329.

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34

Rykov, A. V., M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, and M. V. Ved’. "Temperature stabilization of spin-LEDs with a CoPt injector." Journal of Physics: Conference Series 816 (March 2017): 012034. http://dx.doi.org/10.1088/1742-6596/816/1/012034.

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35

Krishnamurthy, Srinivasan, Mark van Schilfgaarde, and Nathan Newman. "Spin lifetimes of electrons injected into GaAs and GaN." Applied Physics Letters 83, no. 9 (September 2003): 1761–63. http://dx.doi.org/10.1063/1.1606873.

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36

de Aguiar, F. M., A. Azevedo, and S. M. Rezende. "Nonlinear dynamics of spin-injected magnons in magnetic nanostructures." Journal of Applied Physics 91, no. 10 (2002): 8046. http://dx.doi.org/10.1063/1.1450819.

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37

Hu, K. G. "Optically injected spin current in [110] GaAs quantum wells." Solid State Communications 148, no. 7-8 (November 2008): 283–85. http://dx.doi.org/10.1016/j.ssc.2008.09.004.

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38

Dao, T. Phuong, Marvin Müller, Zhaochu Luo, Manuel Baumgartner, Aleš Hrabec, Laura J. Heyderman, and Pietro Gambardella. "Chiral Domain Wall Injector Driven by Spin–Orbit Torques." Nano Letters 19, no. 9 (August 16, 2019): 5930–37. http://dx.doi.org/10.1021/acs.nanolett.9b01504.

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39

Mathew, Shinto P., Prakash Chandra Mondal, Hagay Moshe, Yitzhak Mastai, and Ron Naaman. "Non-magnetic organic/inorganic spin injector at room temperature." Applied Physics Letters 105, no. 24 (December 15, 2014): 242408. http://dx.doi.org/10.1063/1.4904941.

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40

Csonka, Szabolcs, Ireneusz Weymann, and Gergely Zarand. "An electrically controlled quantum dot based spin current injector." Nanoscale 4, no. 12 (2012): 3635. http://dx.doi.org/10.1039/c2nr30399j.

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41

An, Suhyeok, Hyeong-Joo Seo, Eunchong Baek, Soobeom Lee, and Chun-Yeol You. "Role of the chiral spin configuration in field-free spin–orbit torque-induced magnetization switching by a locally injected spin current." Applied Physics Letters 120, no. 26 (June 27, 2022): 262402. http://dx.doi.org/10.1063/5.0094631.

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For deterministic magnetization switching by spin–orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential to break the lateral symmetry. Realizing chirality in a magnetic ordering system can be one approach for achieving asymmetry in the lateral direction for field-free magnetization switching. However, systematic analysis of the influence of the chiral spin system on deterministic switching is still scarce. We investigate the field-free SOT-induced magnetization switching by using a chiral spin configuration experimentally and theoretically with micromagnetic simulations. We designed a system in which only part of the ferromagnetic layer overlaps with the heavy metal layer in the Pt/Co/MgO structure. Therefore, a spin current exerts only on a local area of the ferromagnetic layer, which results in a Néel-type chiral spin configuration. The induced chiral spin configuration can be stabilized (or destabilized) depending on the sign of the interfacial Dzyaloshinskii–Moriya interaction and the direction of the current. The stabilized spin configuration plays a crucial role in the deterministic switching in the zero field. We expect our findings to widen the perspective on chirality-based all-electrical SOT device applications.
42

Hoque, Anamul Md, Bing Zhao, Dmitrii Khokhriakov, Prasanta Muduli, and Saroj P. Dash. "Charge to spin conversion in van der Waals metal NbSe2." Applied Physics Letters 121, no. 24 (December 12, 2022): 242404. http://dx.doi.org/10.1063/5.0121577.

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Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals with high spin–orbit coupling and spin textures have attracted significant attention for an efficient charge-to-spin conversion process. Here, we demonstrate the electrical generation of spin polarization in NbSe2 up to room temperature. Characterization of NbSe2 shows superconducting transition temperature, Tc ∼ 7 K. To probe the current-induced spin polarization in NbSe2, we used a graphene-based non-local spin-valve device, where the spin-polarization in NbSe2 is efficiently injected and detected using non-local spin-switch and Hanle spin precession measurements. A significantly higher charge-spin conversion in NbSe2 is observed at a lower temperature. Systematic measurements provide the possible origins of the spin polarization to be predominantly due to the spin Hall effect or Rashba–Edelstein effect in NbSe2, considering different symmetry-allowed charge-spin conversion processes.
43

Ved M. V., Dorokhin M. V., Lesnikov V. P., Kudrin A. V., Demina P. B., Zdoroveyshchev A. V., and Danilov Yu. A. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.
44

Ghosh, Joydeep, Dmitry Osintsev, V. Sverdlov, and Siegfried Selberherr. "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress." Journal of Nano Research 39 (February 2016): 34–42. http://dx.doi.org/10.4028/www.scientific.net/jnanor.39.34.

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The electron spin properties of semiconductors are of immense interest for their potential in spin-driven applications. Silicon is a perfect material for spintronics due to a long spin lifetime. Understanding the peculiarities of the subband structure and details of spin propagation in thin silicon films in the presence of the spin-orbit interaction is under scrutiny. We have performed simulations to obtain the surface roughness limited, acoustic-and optical-phonon mediated spin relaxation time, when the film is under shear strain. The degeneracy between the non-equivalent valleys is lifted by strain, which in turn subdues the dominating inter-valley relaxation components and increases the spin lifetime. We also elaborate on the injection orientation sensitive spin relaxation model and predict that the spin relaxation time is maximum, when the spin is injected in-plane, relative to the (001) oriented silicon film.
45

Mi, Yi Lin, Feng Yan Liu, and Jiang Nan Gao. "Spin Injection in a Ferromagnetic/Organic System." Advanced Materials Research 502 (April 2012): 416–20. http://dx.doi.org/10.4028/www.scientific.net/amr.502.416.

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Spin injection efficiency in the ferromagnet/ organic semiconductors system (FM/OSEs) was explored considering the spin dependence of the electric-conductivity induced by spin injection in the OSEs. It is known that the OSEs is spin polarized, once spin was injected from FM layer to OSEs layer. The up-spin polarons and the down-spin polarons have different density. The spin dependence of the electric-conductivity is so induced. In the literature, it was usually supposed that the electric-conductivity in the spin polarized OSEs is spin independent. So, it is crucial to reflect the physics in the spin injection. Our work shows that the spin-dependent electrical-conductivity is one of the significant factors which affect the spin injection efficiency. The spin injection efficiency increases obviously with the rising of the spin-dependent electrical-conductivity in the same spin injection system. And the effect becomes larger, when the polaron proportion increases. Furthermore, the effects of interfacial electrochemical-potential proportion on the spin injection efficiency in the heterojunction are also included.
46

Anugrah, Yoska, Jiaxi Hu, Gordon Stecklein, Paul A. Crowell, and Steven J. Koester. "Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves." AIP Advances 8, no. 1 (January 2018): 015129. http://dx.doi.org/10.1063/1.5008761.

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47

Zhang, J. J., F. Liang, and J. Wang. "Charge Hall effect generated by spin-polarized current injected into Rashba spin orbit coupling media." European Physical Journal B 72, no. 1 (September 11, 2009): 105–12. http://dx.doi.org/10.1140/epjb/e2009-00305-2.

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48

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (December 31, 2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Abstract:
Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.
49

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (December 31, 2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Abstract:
Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.
50

Yasyulevich, I. A., N. G. Bebenin, and V. V. Ustinov. "Inzhektsiya chisto spinovogo toka v gelimagnetik." Журнал экспериментальной и теоретической физики 163, no. 4 (April 15, 2023): 574–84. http://dx.doi.org/10.31857/s0044451023040144.

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Abstract:
The injection of a pure spin current into a conducting helimagnet is investigated. The characteristic decay lengths for the spin current injected into the helimagnet are determined, and their physical meaning is described. It is shown that instead of the spin diffusion length, helimagnets are characterized by the decay length that is always smaller than the spin diffusion length, the difference in these lengths being determined by the ratio of the helimagnet spiral period to the spin diffusion length. We predict the existence of the “effect of the chiral polarization of a pure spin current,” i.e., the emergence of the spin current with longitudinal (transverse) polarization, which depends on the spiral chirality, upon the injection of a pure spin current with the transverse (longitudinal) polarization relative to the spiral axis.

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