Academic literature on the topic 'Injecteur de spin'
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Journal articles on the topic "Injecteur de spin":
1
Chen, Zhigao, Baigeng Wang, D. Y. Xing, and Jian Wang. "A spin injector." Applied Physics Letters 85, no. 13 (September 27, 2004): 2553–55. http://dx.doi.org/10.1063/1.1793335.
2
Chi, Feng, Xiao-Ning Dai, and Lian-Liang Sun. "A quantum dot spin injector with spin bias." Applied Physics Letters 96, no. 8 (February 22, 2010): 082102. http://dx.doi.org/10.1063/1.3327807.
3
Egelhoff Jr., W. F. "Spin Polarization of Injected Electrons." Science 296, no. 5571 (May 17, 2002): 1195a—1195. http://dx.doi.org/10.1126/science.296.5571.1195a.
4
Mi, Yilin, Ming Zhang, Hongrui Guo, and Hui Yan. "Spin transport in a spin-injected organic semiconductor system." Current Applied Physics 10, no. 6 (November 2010): 1448–51. http://dx.doi.org/10.1016/j.cap.2010.05.011.
5
Giazotto, F., and F. S. Bergeret. "Quantum interference hybrid spin-current injector." Applied Physics Letters 102, no. 16 (April 22, 2013): 162406. http://dx.doi.org/10.1063/1.4802953.
6
Bhat, R. D. R., and J. E. Sipe. "Optically Injected Spin Currents in Semiconductors." Physical Review Letters 85, no. 25 (December 18, 2000): 5432–35. http://dx.doi.org/10.1103/physrevlett.85.5432.
7
WANG, Y., A. P. LIU, J. BAO, X. G. XU, and Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR." Modern Physics Letters B 22, no. 16 (June 30, 2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.
Abstract:
In this paper, large spin polarization and magnetoconductance in a ferromagnet (FM)/ferromagnetic insulator (FI)/two-dimensional electron gas (2DEG)/non-magnetic insulator (I)/FM hybrid structure are theoretically predicted by introducing a spin-filtering injector. In the framework of coherent tunneling model, the electron transmission probability, spin polarization and magnetoconductance in the hybrid structure all oscillate with the electron density within the 2DEG channel. A complete single-mode spin injection would be realized by designing a well-defined geometry to adjust the competition between the spin-dependent tunneling of the conductive electrons and spin-filtering effect of the FI barrier.
8
Battiato, M. "Spin polarisation of ultrashort spin current pulses injected in semiconductors." Journal of Physics: Condensed Matter 29, no. 17 (March 27, 2017): 174001. http://dx.doi.org/10.1088/1361-648x/aa62de.
9
Zholud, A., and S. Urazhdin. "Microwave generation by spin Hall nanooscillators with nanopatterned spin injector." Applied Physics Letters 105, no. 11 (September 15, 2014): 112404. http://dx.doi.org/10.1063/1.4896023.
10
Zozoulenko, I. V., and M. Evaldsson. "Quantum antidot as a controllable spin injector and spin filter." Applied Physics Letters 85, no. 15 (October 11, 2004): 3136–38. http://dx.doi.org/10.1063/1.1804249.
Dissertations / Theses on the topic "Injecteur de spin":
1
Gao, Xue. "Injection de spin dans les semiconducteurs et les matériaux organiques." Thesis, Université de Lorraine, 2019. http://www.theses.fr/2019LORR0059/document.
Abstract:
La spintronique utilisant des matériaux semi-conducteurs est un sujet de recherche très actif. Elle permet de combiner le potentiel des semi-conducteurs avec le potentiel des matériaux magnétiques. Le GaN pourrait être un bon candidat pour des applications en spintronique car le temps de relaxation de spin est très long. La spintronique organique est également un domaine de recherche en plein essor en raison de la longue durée de vie de spin des porteurs de charge ainsi que de leur coût relativement bas, de leur flexibilité et de leur diversité chimique. Dans un premier temps, nous montrerons que la polarisation circulaire de la lumière émise par une LED contenant une couche unique de points quantiques InAs / GaAs (QD) InAs / GaAs dopés p peut atteindre environ 18% sans champ magnétique extérieur. Une corrélation claire est établie entre le degré de polarisation de la lumière émise et l’aimantation perpendiculaire de l’injecteur. La polarisation atteint un maximum pour une polarisation appliquée de 2.5 V à 10 K, ce qui correspond à un courant injecté de 6 µA. En outre, nous observons un comportement remarquable de la polarisation pour un température comprise entre 60K et 80K. L’évolution de la polarisation en fonction de la température est discutée à la lumière de la compétition entre le temps de vie de recombinaison radiative τr et le temps de relaxation de spin τs. De plus, nous avons développé un injecteur de spin présentant une anisotropie magnétique perpendiculaire sur GaN. Nous avons d’abord optimisé la croissance de MgO pour différentes températures du substrat. Nous avons ensuite étudié la croissance de Fe puis de Co sur MgO/GaN. L’injecteur de spin Co(0001)/MgO(111) a été retenu car celui-ci permet d’obtenir un anisotropie magnétique perpendiculaire. De plus, les calculs ab initio ont également montré que l’interface Co/MgO(111) présente une grande anisotropie magnétique. Finalement, nous étudions les MFTJ basés sur une barrière de PVDF organique dopée avec des nano-particules de Fe3O4. Nous avons fabriqué avec succès une multicouche de La0.6Sr0.4MnO3/PVDF:Fe3O4/Co, dans laquelle la barrière organique en poly (fluorure de vinylidène) (PVDF) a été dopée avec des nanoparticules ferromagnétiques de Fe3O4. En modifiant la polarisation du PVDF, l’effet tunnel dans la jonction multiferroïque peut être commuté via la partie LSMO/PVDF/Co (polarisation positive) ou via la partie Fe3O4/PVDF/Co (polarisation négative). Cela correspond à une inversion de la magnétorésistance à effet tunnel (TMR) de + 10% à -50%, respectivement. Notre étude montre que les jonctions tunnel multiferroïques organiques dopées avec des particules magnétiques pourraient créer de nouvelles fonctionnalités en jouant sur l’interaction du magnétisme des nanoparticules avec la ferroélectricité de la barrière organiqueSpintronics with semiconductors is very attractive as it can combine the potential of semiconductors with the potential of the magnetic materials. GaN has a long spin relaxation time, which could be of potential interest for spintronics applications. Organic spintronics is also very appealing because of the long spin lifetime of charge carriers in addition to their relatively low cost, flexibility, and chemical diversity. In this thesis, we investigate spin injection in spin LEDs containing either InAs/GaAs quantum dots or InGaN/GaN quantum wells. Moreover, we further study spin polarized transport in organic multiferroic tunnel junctions (OMFTJs). Firstly, we will show that the circular polarization of the light emitted by a LED containing a single layer of p-doped InAs/GaAs quantum dots (QDs) can reach about 18% under zero applied magnetic field. A clear correlation is established between the polarization degree of the emitted light and the perpendicular magnetization of the injector layer. The polarization reaches a maximum for an applied bias of 2.5V at 10K, which corresponds to an injected current of 6 µA. Also, we report a remarkable behavior of the polarization in the temperature region 60-80K. The interpretation of the bias and temperature dependence of the polarization is discussed in light of the competition between radiative recombination time τr and the spin relaxation time τs. In addition, significant efforts have been devoted to developing a perpendicular spin injector on GaN based materials to achieve spin injection without applying a magnetic field. Firstly, the growth of MgO has been investigated at various growth temperatures. Then, we studied the growth of either Fe or Co on MgO/GaN. In contrast to Fe/MgO, the Co/MgO spin injector yields a clear perpendicular magnetic anisotropy. In addition, ab-initio calculations have been performed to understand the origin of the perpendicular magnetic anisotropy at the Co/MgO(111) interface. Finally, we investigate multiferroic tunnel junctions (MFTJs) based on organic PVDF barriers doped with Fe3O4 nano particles. The organic MFTJs have recently attracted much attention since they can combine advantages of spintronics, organic and ferroelectric electronics. We report on the successful fabrication of La0.6Sr0.4MnO3/PVDF:Fe3O4/Co OMFTJ, where the poly(vinylidene fluoride) (PVDF) organic barrier has been doped with ferromagnetic Fe3O4 nanoparticles. By changing the polarization of the ferroelectric PVDF, the tunneling process in OMFTJ can be switched either through the LSMO/PVDF/Co part (positive polarization) or through the Fe3O4/PVDF/Co part (negative polarization). This corresponds to a reversal of tunneling magnetoresistance (TMR) from +10% to -50%, respectively. Our study shows that the doping of OMFTJs with magnetic nanoparticles can create new functionalities of organic spintronic devices by the interplay of nanoparticle magnetism with the ferroelectricity of the organic barrier
2
Gao, Xue. "Injection de spin dans les semiconducteurs et les matériaux organiques." Electronic Thesis or Diss., Université de Lorraine, 2019. http://www.theses.fr/2019LORR0059.
Abstract:
La spintronique utilisant des matériaux semi-conducteurs est un sujet de recherche très actif. Elle permet de combiner le potentiel des semi-conducteurs avec le potentiel des matériaux magnétiques. Le GaN pourrait être un bon candidat pour des applications en spintronique car le temps de relaxation de spin est très long. La spintronique organique est également un domaine de recherche en plein essor en raison de la longue durée de vie de spin des porteurs de charge ainsi que de leur coût relativement bas, de leur flexibilité et de leur diversité chimique. Dans un premier temps, nous montrerons que la polarisation circulaire de la lumière émise par une LED contenant une couche unique de points quantiques InAs / GaAs (QD) InAs / GaAs dopés p peut atteindre environ 18% sans champ magnétique extérieur. Une corrélation claire est établie entre le degré de polarisation de la lumière émise et l’aimantation perpendiculaire de l’injecteur. La polarisation atteint un maximum pour une polarisation appliquée de 2.5 V à 10 K, ce qui correspond à un courant injecté de 6 µA. En outre, nous observons un comportement remarquable de la polarisation pour un température comprise entre 60K et 80K. L’évolution de la polarisation en fonction de la température est discutée à la lumière de la compétition entre le temps de vie de recombinaison radiative τr et le temps de relaxation de spin τs. De plus, nous avons développé un injecteur de spin présentant une anisotropie magnétique perpendiculaire sur GaN. Nous avons d’abord optimisé la croissance de MgO pour différentes températures du substrat. Nous avons ensuite étudié la croissance de Fe puis de Co sur MgO/GaN. L’injecteur de spin Co(0001)/MgO(111) a été retenu car celui-ci permet d’obtenir un anisotropie magnétique perpendiculaire. De plus, les calculs ab initio ont également montré que l’interface Co/MgO(111) présente une grande anisotropie magnétique. Finalement, nous étudions les MFTJ basés sur une barrière de PVDF organique dopée avec des nano-particules de Fe3O4. Nous avons fabriqué avec succès une multicouche de La0.6Sr0.4MnO3/PVDF:Fe3O4/Co, dans laquelle la barrière organique en poly (fluorure de vinylidène) (PVDF) a été dopée avec des nanoparticules ferromagnétiques de Fe3O4. En modifiant la polarisation du PVDF, l’effet tunnel dans la jonction multiferroïque peut être commuté via la partie LSMO/PVDF/Co (polarisation positive) ou via la partie Fe3O4/PVDF/Co (polarisation négative). Cela correspond à une inversion de la magnétorésistance à effet tunnel (TMR) de + 10% à -50%, respectivement. Notre étude montre que les jonctions tunnel multiferroïques organiques dopées avec des particules magnétiques pourraient créer de nouvelles fonctionnalités en jouant sur l’interaction du magnétisme des nanoparticules avec la ferroélectricité de la barrière organiqueSpintronics with semiconductors is very attractive as it can combine the potential of semiconductors with the potential of the magnetic materials. GaN has a long spin relaxation time, which could be of potential interest for spintronics applications. Organic spintronics is also very appealing because of the long spin lifetime of charge carriers in addition to their relatively low cost, flexibility, and chemical diversity. In this thesis, we investigate spin injection in spin LEDs containing either InAs/GaAs quantum dots or InGaN/GaN quantum wells. Moreover, we further study spin polarized transport in organic multiferroic tunnel junctions (OMFTJs). Firstly, we will show that the circular polarization of the light emitted by a LED containing a single layer of p-doped InAs/GaAs quantum dots (QDs) can reach about 18% under zero applied magnetic field. A clear correlation is established between the polarization degree of the emitted light and the perpendicular magnetization of the injector layer. The polarization reaches a maximum for an applied bias of 2.5V at 10K, which corresponds to an injected current of 6 µA. Also, we report a remarkable behavior of the polarization in the temperature region 60-80K. The interpretation of the bias and temperature dependence of the polarization is discussed in light of the competition between radiative recombination time τr and the spin relaxation time τs. In addition, significant efforts have been devoted to developing a perpendicular spin injector on GaN based materials to achieve spin injection without applying a magnetic field. Firstly, the growth of MgO has been investigated at various growth temperatures. Then, we studied the growth of either Fe or Co on MgO/GaN. In contrast to Fe/MgO, the Co/MgO spin injector yields a clear perpendicular magnetic anisotropy. In addition, ab-initio calculations have been performed to understand the origin of the perpendicular magnetic anisotropy at the Co/MgO(111) interface. Finally, we investigate multiferroic tunnel junctions (MFTJs) based on organic PVDF barriers doped with Fe3O4 nano particles. The organic MFTJs have recently attracted much attention since they can combine advantages of spintronics, organic and ferroelectric electronics. We report on the successful fabrication of La0.6Sr0.4MnO3/PVDF:Fe3O4/Co OMFTJ, where the poly(vinylidene fluoride) (PVDF) organic barrier has been doped with ferromagnetic Fe3O4 nanoparticles. By changing the polarization of the ferroelectric PVDF, the tunneling process in OMFTJ can be switched either through the LSMO/PVDF/Co part (positive polarization) or through the Fe3O4/PVDF/Co part (negative polarization). This corresponds to a reversal of tunneling magnetoresistance (TMR) from +10% to -50%, respectively. Our study shows that the doping of OMFTJs with magnetic nanoparticles can create new functionalities of organic spintronic devices by the interplay of nanoparticle magnetism with the ferroelectricity of the organic barrier
3
Zhou, Ziqi. "Optical and Electrical Properties of Two-Dimensional Materials." Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0141.
Abstract:
Les semi-conducteurs bidimensionnels possèdent de nombreuses propriétés fonctionnelles intéressantes telles qu’électriques, optiques, magnétiques, thermiques etc., qui permettent des applications potentielles notamment dans les dispositifs optoélectroniques ultraminces, transparents et hautement intégrés. La synthèse de nouveaux matériaux bidimensionnels et l’exploration de leurs performances optimales, ainsi que le développement de leurs applications font l’objet d’une intense activité de recherche dans le domaine des matériaux. Cette thèse s’inscrit dans la recherche de nouveaux matériaux bidimensionnels. Un premier axe vise à injecter un courant polarisé en spin dans une structure semi-conductrice bidimensionnelle à base de MoS₂ en vue de contrôler la polarisation de l’émission optique. L’objectif est ici d’élaborer une couche ferromagnétique de CoFeB à aimantation perpendiculaire capable d’injecter des électrons polarisés sans champ magnétique, et sur une grande surface. L’obtention de tels émetteurs optique polarisés doit s’accompagner du développement de photodétecteurs de lumière polarisée à base de matériaux bidimensionnels. C’est l’objet des deux autres axes de cette thèse dans lesquels la photo-détection basée sur les nouveaux semi-conducteur GeAs et des alliages d’éléments des groupes IV-VI tels que SnS et ZnSnS est étudiée. Concernant l’injecteur de spin, on s’intéresse à la fabrication des structures Ta/CoFeB/MgO ayant une large anisotropie magnétique perpendiculairement à l’axe de croissance. Un point important est la réalisation d’un dépôt homogène couvrant toute la surface de la monocouche de MoS₂ sous-jacente, constituant l’émetteur de lumière. En optimisant l’épaisseur de la couche de CoFeB et la température du recuit, on obtient une grande énergie d’anisotropie magnétique perpendiculaire valant 0.975 mJ/m². Par l’analyse des propriétés structurales et chimiques de l’hétérostructure, il est montré que l’insertion de MgO entre le métal ferromagnétique et le matériau bidimensionnel peut efficacement bloquer la diffusion des atomes du ferromagnétique. Il est également montré que la couche de Ta joue un rôle critique « d’absorption » des atomes de B de la couche de CoFeB ce qui induit l’aimantation perpendiculaire. D’après les calculs ab initio, l’épaisseur de MgO peut être ajustée pour modifier la structure de bande de MoS₂, allant d’un gap indirect avec pour une couche de MgO de 7 monocouches (MCs) à un gap direct pour une couche de MgO de 3 MCs. L’effet de proximité introduite par le Fe conduit à une modification de la bande de valence au point Γ pour 3 MCs, alors que celle-ci est négligeable pour 7 MCs. Afin d’obtenir un photodétecteur sensible à la polarisation, on s’intéresse à des cristaux ayant une structure anisotrope. La nature anisotrope intra-planaire du cristal IV-V de GeAs est investiguée par spectrométrie d’absorption résolue en polarisation entre 400 et 2000 nm. Les échantillons nanométriques bidimensionnels obtenus de GeAs démontrent bien un dichroïsme linéaire et une photo-détection sensible à la polarisation. Les ratios dichroïques obtenus par des mesures de photocourant atteignent des valeurs élevées de Ipmax/Ipmin ~ 1.49 à 520 nm et de Ipmax/Ipmin ~ 4.4 à 830 nm. Les cartographies de photo-courant suggèrent que la dépendance du courant avec la polarisation trouve son origine majoritairement aux interfaces électrode/GeAs qui présentent un caractère de type Schottky. Des alliages à base d’éléments des groupes IV-VI tels que SnS et ZnSnS ont également été caractérisés. Il est démontré que SnS présente une mobilité des porteurs valant 37,75 cm²•V⁻¹•S⁻¹ et une photo-réponse de 310,5 A/W. En raison de l’absorption optique anisotrope, le photo-courant est dépendant de la direction de polarisation de la lumière incidente, émise à 808 nm. L’absorption optique en bord d’absorption présente une sensibilité à la polarisation avec le plus haut ratio dichroïque atteint valant 3,06 à 862 nm. [...]Two-dimensional (2D) semiconductor materials exhibit overwhelming electrical, optical, magnetic, thermal and other advantages, which enables their great potential applications in ultra-thin, transparent and highly integrated optoelectronic devices. Searching new two-dimensional materials and exploring their optimal performance, as well as expanding the practical application of two-dimensional materials have been the cores of the researches of two-dimensional materials. This thesis focuses on the vertical magnetic control of the CoFeB film on a large-area single-layer MoS₂ film, which could expand the potential of two-dimensional materials in spin optical detectors, the Polarized Photodetection (anisotropy) based on noval two-dimensional semiconductor GeAs, and the optical characterizations of group IV-VI compounds like SnS and ZnSnS alloys. This paper introduces them in detail through the following three parts: 1. We research the fabrication of the Ta/CoFeB/MgO structures with large perpendicular magnetic anisotropies (PMA) on the full coverage MoS₂ monolayers. By optimizing the thickness of the CoFeB layer and the annealing temperature, a large perpendicular interface anisotropy energy of 0.975 mJ/m² has been obtained at the CoFeB/MgO interface. By analyzing the structural and the chemical properties of the heterostructure, it is found that the insertion of MgO between the ferromagnetic metal (FM) and the 2D material can effectively block the diffusion of the FM atoms into the 2D material, and that the Ta layer plays a critical role to efficiently absorb B atoms from the CoFeB layer to establish the PMA. From the results of ab initio calculations, the MgO thickness can be tuned to modify the MoS₂ band structure, from an indirect bandgap with 7 MLs MgO layers to a direct bandgap with 3 MLs MgO layers. The proximity effect induced by Fe results in a splitting of 10 meV in the valence band at the Γ point of the 3MLs MgO structure while it is negligible for the 7MLs MgO structure. 2. we research the anisotropic optical characterization of a group IV-V compound, Germanium Arsenic (GeAs), with anisotropic monoclinic structure. The in-plane anisotropic optical nature of GeAs crystal is further investigated by the polarization-resolved absorption spectroscopy (400-2000 nm) and the polarization-sensitive photodetectors. In the visible-to-near-infrared range, the 2D GeAs nanoflakes demonstrate the distinct perpendicular optical reversal with an angle of 75~80 degrees on both of the linear dichroism and the polarization-sensitive photodetection. Obvious anisotropic features and the high dichroic ratio of Ipmax/Ipmin ~ 1.49 at 520 nm and Ipmax/Ipmin ~ 4.4 at 830 nm are measured by the polarization-sensitive photodetection. The polarization-dependent photocurrent mapping implied that the polarized photocurrent mainly occurred at the Schottky photodiodes at the electrode/GeAs interface. 3. We research optical characterizations of group-IV-VI compounds like SnS and ZnSnS alloys. SnS nanosheets exhibit carrier mobility of 37.75 cm²·V⁻¹·s⁻¹, photoresponsivity of 310.5 A/W and external quantum efficiency of 8.56×104% at 450 nm. Optical absorption around the absorption edge presents obvious polarization sensitivity with the highest optical absorption dichroic ratio of 3.06 at 862 nm. Due to the anisotropic optical absorption, the polarized photocurrent appears upon the periodic change affected by the polarized direction of the incident light at 808 nm. The ZnSnS alloys combine the advantageous optical parameters of SnS and ZnS₂, which belong to the direct band structure of n-type 2D semiconductors. The carrier mobility of the alloy is 65 cm² V⁻¹ S⁻¹ and the on/off ratio under white-LED illumination is as high as 51
4
Lin, Weiwei, Kai Chen, Shufeng Zhang, and C. L. Chien. "Enhancement of Thermally Injected Spin Current through an Antiferromagnetic Insulator." AMER PHYSICAL SOC, 2016. http://hdl.handle.net/10150/614754.
Abstract:
We report a large enhancement of thermally injected spin current in normal metal (NM)/antiferromagnet (AF)/yttrium iron garnet (YIG), where a thin AF insulating layer of NiO or CoO can enhance the spin current from YIG to a NM by up to a factor of 10. The spin current enhancement in NM/AF/YIG, with a pronounced maximum near the Neel temperature of the thin AF layer, has been found to scale linearly with the spin-mixing conductance at the NM/YIG interface for NM = 3d, 4d, and 5d metals. Calculations of spin current enhancement and spin mixing conductance are qualitatively consistent with the experimental results.
5
Alharthi, Sami S. "Nonlinear dynamics of solitary and optically-injected spin vertical-cavity lasers." Thesis, University of Essex, 2016. http://repository.essex.ac.uk/16632/.
Abstract:
This work investigates the nonlinear dynamics and polarisation properties of Spin-Vertical-(External)-Cavity Surface-Emitting Lasers (V(E)CSELs). The focus is on gaining a broad understanding of the various polarised resolved nonlinear dynamical effects in solitary and injected 1300 nm spin-V(E)CSELs. We report a comprehensive study including theory, based on the Spin Flip Model, and experiments of the stability characteristics of solitary 1300 nm dilute nitride Quantum-Well (QW) spin-VCSELs. Various forms of oscillatory behaviour causing self-sustained oscillations in the polarisation of the spin-VCSEL subject to Continuous-Wave (CW) pumping are found. Additionally, this work is extended to study experimentally and theoretically the evolution of the output polarisation ellipticity, and experimentally the nonlinear dynamics of the light polarisation emitted by the QW spin VCSELs under polarised optical injection. Rich nonlinear dynamics of the optically injected QW spin-VCSEL are reported ranging from polarisation control, polarisation switching and bistability to periodic oscillations and chaos. Good agreement is found between measurements and calculations where theoretical results are available. We also report the first 1300 nm Quantum-Dot (QD) Semiconductor Disk Laser (SDL) using a very simple and compact laser configuration involving a high reflection (HR)-coated fibre as the top mirror. Moreover, by applying spin injection to the 1300 nm SDL via CW polarised optical pumping we also demonstrate the first 1300 nm QD spin Vertical-External-Cavity Surface-Emitting Laser (Spin-VECSEL). This is also accompanied by an investigation of the dynamics of the solitary 1300 nm QD spin-VECSEL. Finally, we present the first experimental study of the evolution of the output polarisation ellipticity and nonlinear dynamics of the 1300 nm QD spin-VECSEL under polarised optical injection. Our findings show nonlinear effects similar to the ones seen in optically injected QW spin-VCSELs.
6
Hu, Kaige. "Optically-injected spin current and its scattering effect in semiconductor quantum wells." Click to view the E-thesis via HKUTO, 2007. http://sunzi.lib.hku.hk/HKUTO/record/B39557571.
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Hu, Kaige, and 胡凱歌. "Optically-injected spin current and its scattering effect in semiconductor quantum wells." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2007. http://hub.hku.hk/bib/B39557571.
8
Van, Veenhuizen Marc Julien. "Investigation of the tunneling emitter bipolar transistor as spin-injector into silicon." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/63011.
Abstract:
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 2010.Cataloged from PDF version of thesis.
Includes bibliographical references (p. 185-196).
In this thesis is discussed the tunneling emitter bipolar transistor as a possible spin-injector into silicon. The transistor has a metallic emitter which as a spin-injector will be a ferromagnet. Spin-polarized electrons from the ferromagnet tunnel directly into the conduction band of the base of the transistor and are subsequently swept into the collector. The tunneling emitter bipolar transistor as a spin-injector allows for large spin-polarized currents and naturally overcomes the conductivity mismatch and Schottky barrier formation. In this work, the various aspects of the transistor are analyzed. The transfer of spin-polarization across the base-collector junction is simulated. The oxide MgO is considered as a tunnel barrier for the transistor. Electron spin resonance is proposed as a measurement technique to probe the spin-polarization injected into the collector. The fabrication of the transistors is discussed and the importance of the tunnel barrier for the device operation is fully analyzed. The observation of negative differential transconductance in the transistor is explained. A number of side- or unrelated studies are presented as well. A study on scattered and secondary electrons in e-beam evaporation is described. Spin-orbit coupling induced spin-interference of ring-structures is proposed as a spin-detector. A new measurement technique to probe bias dependent magnetic noise in magnetic tunnel junctions is proposed. Also, an IV fitting program that can extract the relative importance of the tunnel and Schottky barrier is discussed and employed to fit the base-emitter IV characteristics of the transistor. The development of several fabrication and experimental tools is described as well.
by Marc Julien van Veenhuizen.
Ph.D.
9
Stanley, Daniel C. "MAGNETIC DAMPING IN FE3O4 THROUGH THE VERWEY TRANSITION FOR VARIABLE AG THICKNESSES." Miami University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=miami1376500586.
10
Duluard, Christophe. "Contribution à la réalisation d'une mémoire magnétique Intégrée sur silicium." Phd thesis, Grenoble 1, 2007. http://www.theses.fr/2007GRE10036.
Abstract:
Ce travail de thèse porte sur l'étude de l'injection et de la collection d'électrons polarisés en spin dans le silicium. Différentes études ont été menées dont les principaux résultats sont présentés. Dans toutes ces études, une structure Métal ferromagnétique/ Isolant/Si (FM/I/S) a été utilisée. La première de ces études porte sur l'existence éventuelle d'une couche “magnétiquement morte” à l'interface Métal ferromagnétique/Isolant qui pourrait aboutir à la dépolarisation des électrons injectés. Dans la seconde étude, les propriétés magnétiques des électrodes ferromagnétiques qui sont utilisées pour l'injection et la collection des électrons polarisés sont analysées. La troisième étude est focalisée sur la contamination de la barrière isolante et du silicium par les métaux 3d du métal ferromagnétique. Ces résultats soulignent l'importance du contrôle de la contamination pour l'obtention de structures Métal ferromagnétique/Isolant/ Si de bonne qualité, un prérequis pour avoir un mécanisme de transport de tunnel direct qui conserve le spin. Dans la dernière étude, des caractérisations capacité-tension et courant-tension sont effectuées sur les structures Métal ferromagnétique/ Isolant/Si. Les résultats électriques montrent que la conduction est assistée par des pièges dans l'oxyde dont l'origine est probablement liée à la présence des métaux 3d dans la barrière isolante. Finalement, un dispositif test a été fabriqué et testé dans le but de mettre en évidence un signal de magnétorésistanceThis work is focused on the study of the injection and the collection of spin-polarized electrons into silicon. Different studies were conducted whose principal results will be presented. In all these studies, a simple diode-like ferromagnetic metal/insulator/semiconductor (FM/I/S) structure is used. The first study aimed to investigate whether a magnetic “dead” layer is obtained at the ferromagnet/oxide barrier that could lead to spin depolarization of the injected electrons. In the second study, magnetic characterization of diodes that may be used for spin injection and collection were performed. The third study focused on the contamination of the insulator barrier and the silicon by the ferromagnetic metal. The results underline the importance of controlling the contamination in obtaining defect-free insulator barrier, a prerequisite to spin conservative direct tunnel transport process. In the last study, capacitance-voltage as well as current-voltage characteristics have been measured. The electrical results show that the mechanisms of transport through the insulator barrier are assisted by defects whose the origin is probably linked to the diffusion of the 3d metal through the insulator barrier. Finally, a silicon-based device was made and studied to attempt to detect a magnetoresistance signal
Books on the topic "Injecteur de spin":
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Suzuki, Y. Spin torque in uniform magnetization. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0020.
Abstract:
This chapter discusses the effects of a spin current injected into a uniformly magnetized ferromagnetic cell. The junction consists of two ferromagnetic layers separated by a nonmagnetic metal interlayer or insulating barrier layer. With a nonmagnetic metal interlayer, the junction is called a giant magnetoresistive nanopillar, and with an insulating barrier layer a magnetic-tunnel junction. When charge current is passed through this device, the electrons are first spin polarized by the fixed layer and spin-polarized current is then injected into the free layer through the nonmagnetic interlayer. This spin current interacts with the spins in the host material by an exchange interaction and exerts a torque. If the exerted torque is large enough, magnetization in the free layer is reversed or continuous precession is excited.
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Kimura, T., and Y. Otani. Magnetization switching due to nonlocal spin injection. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198787075.003.0021.
Abstract:
This chapter discusses and presents a schematic illustration of nonlocal spin injection. In this case, the spin-polarized electrons are injected from the ferromagnet and are extracted from the left-hand side of the nonmagnet. This results in the accumulation of nonequilibrium spins in the vicinity of the F/N junctions. Since the electrochemical potential on the left-hand side is lower than that underneath the F/N junction, the electron flows by the electric field. On the right-hand side, although there is no electric field, the diffusion process from the nonequilibrium into the equilibrium state induces the motion of the electrons. Since the excess up-spin electrons exist underneath the F/N junction, the up-spin electrons diffuse into the right-hand side. On the other hand, the deficiency of the down-spin electrons induces the incoming flow of the down-spin electrons opposite to the motion of the up-spin electron.
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Glazov, M. M. Electron Spin Precession Mode Locking and Nuclei-Induced Frequency Focusing. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0009.
Abstract:
This chapter addresses a rich variety of effects in spin dynamics arising under the conditions of pump-probe experiments. Here we consider the case where the electron spin is injected by a periodic train of circularly polarized pump pulses and precesses between the pulses in an external magnetic field. Nontrivial effects such as resonant spin amplification and spin coherence mode-locking take place due to commensurability of the repetition period of pump pulses and the charge carrier spin precession period. Theoretical approaches to describing the electron and nuclear spin coherence and experimental manifestations of these unusual regimes of spin dynamics are discussed in detail.
Book chapters on the topic "Injecteur de spin":
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Borukhovich, Arnold S., and Alexey V. Troshin. "Creating a High-Temperature Spin Injector and a Spin-Wave Transistor Based on EuO." In Europium Monoxide, 163–85. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-76741-3_7.
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Jones, Richard A. L. "The Brownian universe: physics at the nanoscale." In Soft Machines, 54–87. Oxford University PressOxford, 2004. http://dx.doi.org/10.1093/oso/9780198528555.003.0004.
Abstract:
Abstract People who write about the history of ideas know that great works of literature can change the way people think. But popular films, trashy genre novels, and cheesy television shows can change the intellectual climate just as much as high art can. I am sure that the way people think about nanotechnology now has been profoundly changed by the 1966 science fiction film ‘Fantastic voyage’, later made into a novel by Isaac Asimov and spun out into a Saturday morning television series. The heroes of the film have to save the life of a scientist who knows vital secrets, but who lies in a coma following an attack by the bad guys. He has a blood clot on his brain, inoperable unless the brain surgeon and his team are shrunk to the size of microbes and injected into the scientist’s bloodstream in a similarly sunken submarine. After a series of misadventures, our plucky team manage to destroy the blood clot with (shrunken) laser guns and swim to safety, after their submarine is consumed by a white blood cell.
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Munson, Ronald. "Like Leaving a Note." In The Woman Who Decided To Die, 11–29. Oxford University PressNew York, NY, 2009. http://dx.doi.org/10.1093/oso/9780195331011.003.0002.
Abstract:
Abstract Here’s the beginning of the story as I later heard it: Susan Winters, at twilight on an overcast November day, was crossing Midway Boulevard, walking home from the branch library where she worked. Either she didn’t see the black van speeding toward her or she believed it would stop for the red light. Whatever the reason, she was caught directly in its path. The front edge of the bumper struck her at hip level, tossing her into the air like a coppy doll. When she fell, the back of her head struck the concrete curb of the center divider. She lay sprawled on the street, unconscious and bleeding from her injuries. A cashier in a sandwich shop who had seen the accident called 911, and within twelve minutes an ambulance arrived. The paramedics made sure that Susan’s airway was clear and gave her nasal oxygen. They checked her blood pressure, injected a drug to boost it, then started a saline IV. They put a cervical collar around her neck to protect the upper part of her spine, then slid her onto a backboard. With their siren bleating, they rushed her to the ER at Midwestern Hospital.
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Kenneth Chima, Orgu, Chukwu Andy Onyema, Onubuogu Gilbert Chinedu, and Esiobu Nnaemeka Success. "Does Rural Livestock Farmers’ Have Knowledge of Organic Livestock Farming Practices? Lesson from Southeast, Nigeria." In Agricultural Economics [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.99961.
Abstract:
At global level, the use of inorganic feeds, veterinary drugs amongst others can significantly increase farm output in various livestock production systems. However, in recent times, quality-conscious consumers are increasingly seeking environmentally safe and chemical-residue free healthy livestock foods which organic production methods are said to ensure. Livestock Organic farming can offer promising opportunities for ensuring safe food, environmental sustainability, high livestock yield and income. Incidentally, empirical evidence on present discourse is still relatively very little. Although, a significant contribution has been made by various scholars, regrettably, these studies did not dwell on organic livestock practices and their knowledge level in South-east, Nigeria. Therefore, this presents a dearth in research and became increasingly pertinent that the study was systematically undertaken. A multistage and purposive random sampling procedure was used in the selection of 504 respondents who are organic livestock farmers. Data collected was analyzed using mean score analysis. Result shows that farmers had knowledge on practices of extensive system of livestock/poultry farming (X̄=3.49); provision of natural air (X̄=3.50); provision of natural water sprinkling during hot weather (X̄=3.50); rearing animal without antibiotics (X̄=3.56); and treating injured animals organically (X̄=3.48) among others. Incidentally, majority of the livestock farmers lacked knowledge of how to induce ovulation for animals without drugs (X̄=1.88). The inducement of ovulation for farm animals is one of the livestock organic methods used in forcing farm animals to come on heat/ovulation for quick multiplication. This method is harmful both for the animal an eventual consumer. Therefore, it is necessary that extension agents who are subject matter specialist (SMS) in livestock organic farming educate farmers on how to induce ovulation to farm animals organically with support from the government and farmers cooperative membership resources as these would significantly reduce harmful drugs injected to animal for quick ovulation and preserve the life span of the animal and consumers of the animal.
Conference papers on the topic "Injecteur de spin":
1
Lu, Y., S. Liang, T. Zhang, P. Barate, J. Frougier, P. Renucci, B. Xu, et al. "Spin light emitting diode with CoFeB/MgO spin injector." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157058.
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Zozoulenko, I. V. "Quantum antidot as a controllable spin injector and spin filter." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994635.
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Sipe, John, R. d. R. Bhat, Ali Najmaie, F. Nastos, Y. Kerachian, H. M. van Driel, Arthur L. Smirl, Martin J. Stevens, and X. Y. Pan. "Optically injected spin currents in semiconductors." In International Quantum Electronics Conference. Washington, D.C.: OSA, 2004. http://dx.doi.org/10.1364/iqec.2004.ithk4.
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Johnson, M., H. C. Koo, J. Eom, S. H. Han, and J. Chang. "Electric field control of spin precession in a spin-injected Field Effect Transistor." In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551952.
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Shore, K. A. "Performance optimization of electrically-injected nano-spin VCSELs." In 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5942627.
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Shore, K. A. "Electrically-injected nano-spin VCSELs: Design and applications." In 2011 International Quantum Electronics Conference (IQEC) and Conference on Lasers and Electro-Optics (CLEO) Pacific Rim. IEEE, 2011. http://dx.doi.org/10.1109/iqec-cleo.2011.6193597.
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Joly, Alexandre, Julien Frougier, Ghaya Baili, Mehdi Alouini, Jean-Marie George, Isabelle Sagnes, and Daniel Dolfi. "Theoretical and experimental investigation of optically spin-injected VECSEL." In SPIE OPTO, edited by Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2218148.
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Avrutin, V., Ü. Özgür, J. Xie, Y. Fu, F. Yun, H. Morkoç, and V. I. Litvinov. "Gd-implanted GaN as a candidate for spin injector." In Integrated Optoelectronic Devices 2006, edited by Cole W. Litton, James G. Grote, Hadis Morkoc, and Anupam Madhukar. SPIE, 2006. http://dx.doi.org/10.1117/12.646951.
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Shore, K. A. "Electrically-injected nano-spin VCSELs : design principles and applications." In Frontiers in Optics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/fio.2011.fww5.
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Hubner, J., W. W. Ruhle, M. Klude, D. Hommel, R. D. R. Bhat, J. E. Sipe, and H. M. van Driel. "Direct observation of optically injected spin-polarized currents in semiconductors." In Quantum Electronics and Laser Science (QELS). Postconference Digest. IEEE, 2003. http://dx.doi.org/10.1109/qels.2003.238397.
Reports on the topic "Injecteur de spin":
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Ranjbar, Vahid H., M. Blaskiewicz, F. Meot, C. Montag, and S. Tepikian. Spin Resonance Free Electron Ring Injector. Office of Scientific and Technical Information (OSTI), January 2017. http://dx.doi.org/10.2172/1436273.