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Journal articles on the topic 'InGaN/Si'

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Author: Grafiati

Published: 6 September 2023

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1

Gridchin V. O., Reznik R. R., Kotlyar K. P., Dragunova A. S., Kryzhanovskaya N. V., Serov A. Yu., Kukushkin S. A., and Cirlin G. E. "MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates: comparative analysis." Technical Physics Letters 48, no. 14 (2022): 24. http://dx.doi.org/10.21883/tpl.2022.14.52105.18894.

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In this work, InGaN nanowires with a high In content were grown, for the first time on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN nanowires and creating optoelectronic devices in the visible spectral range. Keywords: InGaN, nanowires, molecular beam epitaxy, SiC/Si, morphological properties, optical properties, miscibility gap, silicon carbide on silicon

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2

Buryi, M., T. Hubáček, F. Hájek, V. Jarý, V. Babin, K. Kuldová, and T. Vaněk. "Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells." Journal of Physics: Conference Series 2413, no. 1 (December 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2413/1/012001.

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The InGaN multiple quantum wells (MQW) samples with the undoped and Si doped GaN barriers were grown by Metal Organic Vapour Phase Epitaxy (MOVPE). By comparing defects-related emission bands in the undoped GaN and InGaN layers, one may conclude that the band is complex in the InGaN layer, composed of at least two contributions peaking at 2.17 and 2.39 eV, respectively. In and Si affect the intensity of the defects-related band – the larger the In and/or Si concentration the stronger the band. The detailed investigation of the observed phenomena was conducted, and the observed peculiarities were explained.

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3

Noh, Siyun, Jaehyeok Shin, Yeon-Tae Yu, Mee-Yi Ryu, and Jin Soo Kim. "Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires." Nanomaterials 13, no. 2 (January 16, 2023): 358. http://dx.doi.org/10.3390/nano13020358.

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We report the improvement in photoelectrochemical water splitting (PEC-WS) by controlling migration kinetics of photo-generated carriers using InGaN/GaN hetero-structure nanowires (HSNWs) as a photocathode (PC) material. The InGaN/GaN HSNWs were formed by first growing GaN nanowires (NWs) on an Si substrate and then forming InGaN NWs thereon. The InGaN/GaN HSNWs can cause the accumulation of photo-generated carriers in InGaN due to the potential barrier formed at the hetero-interface between InGaN and GaN, to increase directional migration towards electrolyte rather than the Si substrate, and consequently to contribute more to the PEC-WS reaction with electrolyte. The PEC-WS using the InGaN/GaN-HSNW PC shows the current density of 12.6 mA/cm2 at −1 V versus reversible hydrogen electrode (RHE) and applied-bias photon-to-current conversion efficiency of 3.3% at −0.9 V versus RHE. The high-performance PEC-WS using the InGaN/GaN HSNWs can be explained by the increase in the reaction probability of carriers at the interface between InGaN NWs and electrolyte, which was analyzed by electrical resistance and capacitance values defined therein.

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4

Tuan, Thi Tran Anh, Dong-Hau Kuo, Phuong Thao Cao, Van Sau Nguyen, Quoc-Phong Pham, Vinh Khanh Nghi, and Nguyen Phuong Lan Tran. "Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer." Coatings 9, no. 11 (October 25, 2019): 699. http://dx.doi.org/10.3390/coatings9110699.

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The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

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5

Han, Ji Sheng, Sima Dimitrjiev, Li Wang, Alan Iacopi, Qu Shuang, and Xian Gang Xu. "InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate." Materials Science Forum 679-680 (March 2011): 801–3. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.801.

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Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

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6

Wang, Xingyu, Peng Wang, Hongjie Yin, Guofu Zhou, and Richard Nötzel. "An InGaN/SiNx/Si Uniband Diode." Journal of Electronic Materials 49, no. 6 (March 13, 2020): 3577–82. http://dx.doi.org/10.1007/s11664-020-08038-5.

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7

Ager, Joel W., Lothar A. Reichertz, Yi Cui, Yaroslav E. Romanyuk, Daniel Kreier, Stephen R. Leone, Kin Man Yu, William J. Schaff, and Wladyslaw Walukiewicz. "Electrical properties of InGaN-Si heterojunctions." physica status solidi (c) 6, S2 (January 26, 2009): S413—S416. http://dx.doi.org/10.1002/pssc.200880967.

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8

ALBERT, S., A. BENGOECHEA-ENCABO, M. A. SANCHEZ-GARCÍA, F. BARBAGINI, E. CALLEJA, E. LUNA, A. TRAMPERT, et al. "ORDERED GAN/INGAN NANORODS ARRAYS GROWN BY MOLECULAR BEAM EPITAXY FOR PHOSPHOR-FREE WHITE LIGHT EMISSION." International Journal of High Speed Electronics and Systems 21, no. 01 (March 2012): 1250010. http://dx.doi.org/10.1142/s0129156412500103.

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The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111) . The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into self-assembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientations.

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9

Yamamoto, Akio, Kazuki Kodama, Md Tanvir Hasan, Naoteru Shigekawa, and Masaaki Kuzuhara. "MOVPE growth of thick (∼1 µm) InGaN on AlN/Si substrates for InGaN/Si tandem solar cells." Japanese Journal of Applied Physics 54, no. 8S1 (July 21, 2015): 08KA12. http://dx.doi.org/10.7567/jjap.54.08ka12.

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10

Cho, ll-Wook, Bom Lee, Kwanjae Lee, Jin Soo Kim, and Mee-Yi Ryu. "Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice." Journal of Nanoscience and Nanotechnology 21, no. 11 (November 1, 2021): 5648–52. http://dx.doi.org/10.1166/jnn.2021.19460.

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The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

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11

Mi, Zetian. "(Invited) Artificial Photosynthesis on III-Nitride Nanowire Arrays." ECS Meeting Abstracts MA2018-01, no. 31 (April 13, 2018): 1850. http://dx.doi.org/10.1149/ma2018-01/31/1850.

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High efficiency artificial photosynthesis, that can convert solar energy directly into chemical fuels, has been extensively investigated. To date, however, success in finding abundant visible-light active photocatalyst has been very limited. Recently, metal-nitrides (e.g. InGaN) have attracted considerable attention for applications in artificial photosynthesis, due to their excellent stability and tunable energy bandgap across nearly the entire solar spectrum. Moreover, InGaN is the only known material whose energy bandgap can straddle the redox potential of water under deep visible and near-infrared light irradiation. In this context, we have investigated the design, fabrication, and performance characterization of multi-band InGaN/GaN nanowire photocatalysts and photoelectrodes for solar water splitting and carbon dioxide reduction. In this work, InGaN nanowires are grown on Si substrate by molecular beam epitaxy. The water splitting reaction takes place on the nonpolar surface (m-planes) of InGaN nanowire photocatalysts. By optimizing the surface charge properties through controlled Mg dopant incorporation, the efficiency for solar-to-hydrogen conversion is enhanced by nearly two orders of magnitude. The absorbed photon conversion efficiency reaches ~90% with optimum Mg doping concentration. The significantly enhanced efficiency is directly related to the optimized surface electronic properties that lead to both efficient water oxidation and proton reduction. A solar-to-hydrogen conversion efficiency of 3.3% and stability >500 hours was demonstrated in photocatalytic overall water splitting. High stability of these nanowires is attributed to the N-rich surfaces of GaN nanowire structures, which protects against photocorrosion and oxidation. We have further demonstrated multi-band InGaN/GaN nanowire photoelectrodes monolithically integrated on a Si solar cell wafer. The tandem PEC device consists of a planar n+-p Si solar cell wafer and p-InGaN nanowire segments. The p-InGaN nanowire arrays are designed to absorb the ultraviolet and visible solar spectrum. The remaining photons with wavelengths up to 1.1 µm are absorbed by the underlying planar Si p-n junction. Such a monolithically integrated photocathode promises solar-to-hydrogen conversion efficiency >20%. With the use of such a photoelectrode, we have also demonstrated that syngas, a key feedstock to produce methanol and liquid fuels in industry, can be produced from a CO2 and H2O with a benchmark turnover number of 1330 and a desirable CO/H2 ratio of 1:2. Work is currently in progress to achieve high efficiency syngas and methanol generation in an aqueous photoelectrochemical cell.

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12

RAZEGHI, MANIJEH. "GaN-BASED LASER DIODES." International Journal of High Speed Electronics and Systems 09, no. 04 (December 1998): 1007–80. http://dx.doi.org/10.1142/s0129156498000415.

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We discuss optical properties of III-Nitride materials and structures. These properties are critical for the development of III-Nitride-based light-emitting diodes and laser diodes. Minority carrier diffusion length in GaN has been determined to be ~ 0.1 μm. The properties of lasing in GaN have been studied using optical pumping. The red shift of emission peak observed in stimulated emission of GaN has been modeled and attributed to many-body interactions at high excitation. The correlation of photoluminescence and optical pumping has shown that band-to-band, or shallow donor-related bandtail to valence band transition is the necessary mechanism of lasing in GaN. This work showed that the thermal instability of InGaN at growth temperature is of main concern in the fabrication of InGaN-based MQW laser diode structures. Photoluminescence has shown that the InGaN composition is very sensitive to the growth temperature. Therefore InGaN growth temperature should be strictly controlled during InGaN-based MQW growth. This work discovered that proper annealing of Si-doping of InGaN/GaN MQW structures that are properly annealed could reduce the lasing threshold and improve the slope efficiency. Over-annealing of these MQWs can lead to thermal degradation of the active layer. Si-doping in over-annealed MQW structure further degrades its quality. The degradation has been attributed to the increase of defects and/or nonuniform local potential formation. P-type doping on the top of InGaN/GaN could also lead to the formation of compensation layer which also degrades laser diode performances. Optical confinement and carrier confinement in InGaN-based laser diode structures are evaluated for optimum laser diode design. The state-of-the-art and fundamental issues of InGaN-based light-emitting diodes and laser diodes are discussed.

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13

Резник, Р. Р., К. П. Котляр, Н. В. Крыжановская, С. В. Морозов, and Г. Э. Цырлин. "Синтез методом молекулярно-пучковой эпитаксии и свойства наноструктур InGaN разветвленной морфологии на кремниевой подложке." Письма в журнал технической физики 45, no. 21 (2019): 48. http://dx.doi.org/10.21883/pjtf.2019.21.48475.17975.

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A possibility of InGaN «nanoflowers» MBE growth on Si substrate has been demonstrated. The results of morphological studies have shown that InGaN synthesis occurs in several stages even at constant substrate temperature. The grown structures show wide photoluminescence spectrum in the range from 450 to 950 nm at room temperature.

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14

Kukushkin S. A., Osipov A. V., Redkov A. V., Stozharov V. M., Ubiyvovk E. V., and Sharofidinov Sh. Sh. "Peculiarities of nucleation and growth of InGaN nanowires on SiC/Si substrates by HVPE." Technical Physics Letters 48, no. 2 (2022): 66. http://dx.doi.org/10.21883/tpl.2022.02.53584.19056.

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The growth of InGaN layers on hybrid SiC/Si substrates with orientations (100), (110), and (111) by the HVPE method was studied at temperatures that wittingly exceed the temperature of InN decomposition onto nitrogen atoms and metallic In (1000oC). On substrates with orientations (110) and (111), the formation of InGaN whisker nanocrystals was observed. The shape and growth mechanisms of nanocrystals were investigated. It is shown that nanocrystals nucleate on the (111) surface only inside V-defects formed at the points where screw dislocations exit onto the surface. On the (110) surface, nanocrystals are formed only on pedestals that arise during the film growth. An explanation is given for the difference in the growth mechanisms of nanocrystals on substrates of different orientations. Keywords: InGaN, heterostructures, SiC on Si, silicon, whisker nanocrystals, nanostructures, atomic substitution method

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15

Cho, Yong-Hoon, T. J. Schmidt, S. Bidnyk, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars. "Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 715–20. http://dx.doi.org/10.1557/s1092578300003306.

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We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0.1-μm-thick Al0.07Ga0.93N capping layer. The Si doping level in the GaN barriers was varied from 1 × 1017 to 3 × 1019 cm−3. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease with increasing Si doping concentration (n), from ∼ 30 ns (for n < 1 × 1017 cm−3) to ∼ 4 ns (for n = 3 × 1019 cm−3). To elucidate whether non-radiative recombination processes affect the measured lifetime, the temperature-dependence of the measured lifetime was investigated. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in structural and interface quality with increasing Si doping indicate that the incorporation of Si in the GaN barriers results in a decrease in carrier localization at potential fluctuations in the InGaN active regions and the interfaces.

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16

Rabinovich, O. I., and V. P. Sushkov. "Quantum efficiency simulation of InGaN/Si LED." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering, no. 3 (March 15, 2015): 50. http://dx.doi.org/10.17073/1609-3577-2012-3-50-53.

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17

Hsu, L., and W. Walukiewicz. "Modeling of InGaN/Si tandem solar cells." Journal of Applied Physics 104, no. 2 (July 15, 2008): 024507. http://dx.doi.org/10.1063/1.2952031.

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18

Hsu, Y. P., S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo, and C. S. Chang. "InGaN-GaN MQW LEDs with Si treatment." IEEE Photonics Technology Letters 17, no. 8 (August 2005): 1620–22. http://dx.doi.org/10.1109/lpt.2005.851989.

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19

Matsuura, Haruka, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, and Liwen Sang. "MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template." Applied Sciences 9, no. 9 (April 27, 2019): 1746. http://dx.doi.org/10.3390/app9091746.

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The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron mobility transistor (HEMT) templates to pursue the complementary p-channel conductivity to realize the monolithic integrated circuits. As the initial step, the epitaxial growth is optimized and the structure properties are investigated by comparing with the InGaN/GaN heterojunctions grown on GaN/sapphire templates. It is found that both the In composition and relaxation degree are higher for the InGaN/GaN on the HEMT template than that on the sapphire substrate. The crystalline quality is deteriorated for the InGaN grown on the HEMT template, which is attributed to the poor-quality GaN channel in the HEMT template. Further analysis indicates that the higher In incorporation in the InGaN layer on the HEMT template may be caused by the higher relaxation degree due to the compositional pulling effect. An increase in the growth temperature by 20 °C with optimized growth condition improves the crystalline quality of the InGaN, which is comparable to that on GaN/sapphire even if it is grown on a poor-quality GaN channel.

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20

Dvoretckaia, Liliia, Vladislav Gridchin, Alexey Mozharov, Alina Maksimova, Anna Dragunova, Ivan Melnichenko, Dmitry Mitin, Alexandr Vinogradov, Ivan Mukhin, and Georgy Cirlin. "Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates." Nanomaterials 12, no. 12 (June 10, 2022): 1993. http://dx.doi.org/10.3390/nano12121993.

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The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development.

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21

Lendyashova, V. V., K. P. Kotlyar, V. O. Gridchin, R. R. Reznik, A. I. Lihachev, K. Yu Shubina, T. N. Berezovskaya, E. V. Nikitina, I. P. Soshnikov, and G. E. Cirlin. "Separation of III-N partially-coalesced nanowire arrays from Si substrate." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012191. http://dx.doi.org/10.1088/1742-6596/2086/1/012191.

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Abstract In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.

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Kim, Sung-Un, and Yong-Ho Ra. "Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures." Nanomaterials 11, no. 1 (December 23, 2020): 9. http://dx.doi.org/10.3390/nano11010009.

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One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and long-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and long-InGaN nanowire heterostructures on silicon (Si) substrate using molecular beam epitaxy (MBE) system. From scanning electron microscope (SEM) and transmission electron microscope (TEM) results, it was confirmed that the various doped-InGaN nanowire structures show much higher crystal quality compared to conventional nanowire structures. By introducing a new three-step modulated growth technique, the n-/p-InGaN active regions were greatly increased and the optical properties were also dramatically improved due to reduced phase separation. In addition, a multi-band p-InGaN/GaN heterostructure was successfully fabricated with the core–shell nanowire structures, which enable the emission of light in the entire visible spectral range, and protect the InGaN surface from surface recombination. This paper offers important insight into the design and epitaxial growth of InGaN nanowire heterostructures.

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Tong, Y. Z., F. Li, G. Y. Zhang, Z. J. Yang, S. X. Jin, X. M. Ding, and Z. Z. Gan. "Silicon and Zinc Co-Doped InGaN Films with High Luminuous Efficiency Grown by LP-MOVCD at High Growth Temperature." Modern Physics Letters B 12, no. 28 (December 10, 1998): 1185–90. http://dx.doi.org/10.1142/s0217984998001396.

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Silicon and zinc co-doped InGaN films were grown by low pressure MOCVD at growth temperature from 820°C to 1060°C. The 455 nm blue light emitting peak was obtained by Si and Zn co-doping. It was found that the photoluminescence intensity of the 455 nm wavelength peak dramatically increases with increasing of growth temperature. The luminous efficiency nearly increases 100 times from 820°C to 1060°C. It was demonstrated that the characteristics mainly come from improvement of crystalline quality instead of the change of Zn or Si doping density in the InGaN films.

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24

Резник, Р. Р., В. О. Гридчин, К. П. Котляр, Н. В. Крыжановская, С. В. Морозов, and Г. Э. Цырлин. "Синтез InGaN-наноструктур развитой морфологии на кремнии: влияние температуры подложки на морфологические и оптические свойства." Физика и техника полупроводников 54, no. 9 (2020): 884. http://dx.doi.org/10.21883/ftp.2020.09.49826.18.

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In this work, the influence of substrate temperature on morphological and optical properties of branched InGaN nanostructures on the Si(111) surface during MBE growth was studied. It was shown that an increase of the substrate temperature leads to a change in the morphology of InGaN nanostructures. In particular, the height of InGaN nanocolumns, which are formed at the initial stage of growth, increases. At the same time, an increase in the growth temperature of InGaN nanostructures leads to an increase in the intensity of the photoluminescence spectra from such structures, and the dependences of the integrated photoluminescence intensity on the excitation power are linear in both cases. All these facts indicate the promise of such structures for optical applications, for example, for creating white LEDs based on a single material

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25

Ebaid, Mohamed, Jung-Wook Min, Chao Zhao, Tien Khee Ng, Hicham Idriss, and Boon S. Ooi. "Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen." Journal of Materials Chemistry A 6, no. 16 (2018): 6922–30. http://dx.doi.org/10.1039/c7ta11338b.

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26

Nakamura, Shuji, Takashi Mukai, and Masayuki Senoh. "Si-Doped InGaN Films Grown on GaN Films." Japanese Journal of Applied Physics 32, Part 2, No.1A/B (January 15, 1993): L16—L19. http://dx.doi.org/10.1143/jjap.32.l16.

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27

Wang, Peng, Hedong Chen, Hao Wang, Xingyu Wang, Hongjie Yin, Lujia Rao, Guofu Zhou, and Richard Nötzel. "Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy." Nanoscale 12, no. 16 (2020): 8836–46. http://dx.doi.org/10.1039/d0nr00071j.

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28

Lee, Moonsang, Hyunkyu Lee, Keun Song, and Jaekyun Kim. "Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate." Nanomaterials 8, no. 7 (July 18, 2018): 543. http://dx.doi.org/10.3390/nano8070543.

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We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.

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29

Christian, George, Menno Kappers, Fabien Massabuau, Colin Humphreys, Rachel Oliver, and Philip Dawson. "Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells." Materials 11, no. 9 (September 15, 2018): 1736. http://dx.doi.org/10.3390/ma11091736.

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In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.

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30

Zheng, Changda, Li Wang, Chunlan Mo, Wenqing Fang, and Fengyi Jiang. "Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate." Scientific World Journal 2013 (2013): 1–4. http://dx.doi.org/10.1155/2013/538297.

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GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.

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31

Hirayama, H., and Y. Aoyagi. "Optical Properties of Si-DOPED AlxGa1−xN/AlyGa1−yN (x=0.24−0.53, y=0.11) Multi-Quantum-Well Structures." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 405–10. http://dx.doi.org/10.1557/s1092578300002805.

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We demonstrate strong ultraviolet (UV) (280-330nm) photoluminescence (PL) emission from multi-quantum-well (MQW) structures consisting of AlGaN active layers fabricated by metal-organic chemical-vapor-deposition (MOCVD). Si-doping is shown to be very effective in order to enhance the PL emission of AlGaN QWs. We found that the optimum values of well thickness and Si-doping concentration of AlxGa1−xN/AlyGa1−yN (x=0.24−0.53, y=0.11) MQW structure for efficient emission were approximately 3nm and 2×1019cm−3, respectively. In addition, the PL intensities of AlGaN, GaN and InGaN quantum well structures are compared. We have found that the PL emission at 77K from a Al0.53Ga0.47N/Al0.11Ga0.89N MQW is as strong as that of InGaN QWs.

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32

Nötzel, Richard. "InN/InGaN quantum dot electrochemical devices: new solutions for energy and health." National Science Review 4, no. 2 (January 7, 2017): 184–95. http://dx.doi.org/10.1093/nsr/nww101.

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AbstractA review is given of the exceptional electrochemical performance of epitaxial InN/InGaN quantum dots (QDs) as photoelectrodes for solar hydrogen generation by water splitting, as biosensor transducers and as anion-selective electrodes, and they are also evaluated as supercapacitor electrodes. The performance is benchmarked against the best performances of other reported materials and nanostructures. A model based on the unique interplay of surface and quantum properties is put forward to understand the boost of catalytic activity and anion selectivity interlinking quantum nanostructure physics with electrochemistry and catalysis. Of equal impact is the direct growth on cheap Si substrates without any buffer layers, allowing novel device designs and integration with Si technology. This makes the InN/InGaN QDs viable, opening up new application fields for III-nitride semiconductors.

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33

Uchida, Kenji, Tao Tang, Shigeo Goto, Tomoyoshi Mishima, Atsuko Niwa, and Jun Gotoh. "Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers." Applied Physics Letters 74, no. 8 (February 22, 1999): 1153–55. http://dx.doi.org/10.1063/1.123471.

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34

Ni, X., J. Lee, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, et al. "Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN." Applied Physics Letters 95, no. 10 (September 7, 2009): 101106. http://dx.doi.org/10.1063/1.3224192.

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35

Jung, Soon Il, Ilgu Yun, Chang Myung Lee, and Joo In Lee. "Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer." Current Applied Physics 9, no. 5 (September 2009): 943–45. http://dx.doi.org/10.1016/j.cap.2008.08.055.

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36

Wu, L. W., S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, C. H. Kuo, W. C. Lai, et al. "InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer." Journal of Electronic Materials 32, no. 5 (May 2003): 411–14. http://dx.doi.org/10.1007/s11664-003-0168-1.

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37

Johar, Muhammad Ali, Hyun-Gyu Song, Aadil Waseem, Jin-Ho Kang, Jun-Seok Ha, Yong-Hoon Cho, and Sang-Wan Ryu. "Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires." Nanoscale 11, no. 22 (2019): 10932–43. http://dx.doi.org/10.1039/c9nr02823d.

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38

Johar, Muhammad Ali, Taeyun Kim, Hyun-Gyu Song, Aadil Waseem, Jin-Ho Kang, Mostafa Afifi Hassan, Indrajit V. Bagal, Yong-Hoon Cho, and Sang-Wan Ryu. "Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template." Nanoscale Advances 2, no. 4 (2020): 1654–65. http://dx.doi.org/10.1039/d0na00115e.

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We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire-template and their optical characterizations are also conducted.

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39

Bouzid, F., and L. Hamlaoui. "Investigation of InGaN/Si double junction tandem solar cells." Journal of Fundamental and Applied Sciences 4, no. 2 (September 3, 2015): 108. http://dx.doi.org/10.4314/jfas.v4i2.1.

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40

Soto Rodriguez, P. E. D., Praveen Kumar, V. J. Gómez, N. H. Alvi, J. M. Mánuel, F. M. Morales, J. J. Jiménez, R. García, E. Calleja, and R. Nötzel. "Spontaneous formation of InGaN nanowall network directly on Si." Applied Physics Letters 102, no. 17 (April 29, 2013): 173105. http://dx.doi.org/10.1063/1.4803017.

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41

Li, Da-Bing, Yu-Huai Liu, Takuya Katsuno, Keisuke Nakao, Kazuya Nakamura, Masakazu Aoki, Hideto Miyake, and Kazumasa Hiramatsu. "Enhanced emission efficiency of InGaN films with Si doping." physica status solidi (c) 3, no. 6 (June 2006): 1944–48. http://dx.doi.org/10.1002/pssc.200565286.

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42

Honda, Y., Y. Yanase, M. Yamaguchi, and N. Sawaki. "Cathodoluminescence properties of InGaN codoped with Zn and Si." physica status solidi (c) 3, no. 6 (June 2006): 1915–18. http://dx.doi.org/10.1002/pssc.200565326.

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43

Dadgar, A., A. Alam, T. Riemann, J. Bl�sing, A. Diez, M. Poschenrieder, M. Strassburg, M. Heuken, J. Christen, and A. Krost. "Crack-Free InGaN/GaN Light Emitters on Si(111)." physica status solidi (a) 188, no. 1 (November 2001): 155–58. http://dx.doi.org/10.1002/1521-396x(200111)188:1<155::aid-pssa155>3.0.co;2-p.

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44

Poschenrieder, M., K. Fehse, F. Schulz, J. Bläsing, H. Witte, A. Krtschil, A. Dadgar, A. Diez, J. Christen, and A. Krost. "MOCVD-Grown InGaN/GaN MQW LEDs on Si(111)." physica status solidi (c), no. 1 (2003): 267–71. http://dx.doi.org/10.1002/pssc.200390040.

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45

Cho, Sung Nae, and Kyu Sang Kim. "Characteristics of InGaN light emitting diode depending on Si-doping on InGaN layers below quantum wells." Current Applied Physics 13, no. 7 (September 2013): 1321–24. http://dx.doi.org/10.1016/j.cap.2013.04.008.

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46

Wang, Cheng-Jie, Ying Ke, Guo-Yi Shiu, Yi-Yun Chen, Yung-Sen Lin, Hsiang Chen, and Chia-Feng Lin. "InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors." Applied Sciences 11, no. 1 (December 22, 2020): 8. http://dx.doi.org/10.3390/app11010008.

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InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta2O5/SiO2 DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n+-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1λ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta2O5 spacer and a 148 nm-thick InGaN active layer that was analyzed from the angle-resolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.

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47

Jiménez, J. J., J. M. Mánuel, P. Aseev, P. E. D. Soto Rodríguez, R. Nötzel, Ž. Gačević, E. Calleja, R. García, and F. M. Morales. "(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN." Journal of Alloys and Compounds 783 (April 2019): 697–708. http://dx.doi.org/10.1016/j.jallcom.2018.12.319.

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48

Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, and Shan Yun. "InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates." Acta Physica Sinica 63, no. 20 (2014): 207304. http://dx.doi.org/10.7498/aps.63.207304.

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49

Середин, П. В., А. С. Леньшин, Д. С. Золотухин, Д. Л. Голощапов, А. М. Мизеров, И. Н. Арсентьев, and А. Н. Бельтюков. "Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии." Физика и техника полупроводников 53, no. 7 (2019): 1010. http://dx.doi.org/10.21883/ftp.2019.07.47882.9084.

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This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.

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50

Xie, Lingyun, Peng Wang, Hongjie Yin, Guofu Zhou, and Richard Nötzel. "All InN/InGaN solid-state potentiometric chloride sensor with super Nernstian sensitivity." Applied Physics Express 13, no. 2 (January 21, 2020): 027003. http://dx.doi.org/10.35848/1882-0786/ab67d3.

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Abstract We demonstrate an all-solid-state potentiometric sensor constructed from solid-state InN/InGaN sensing- and reference electrodes with the epitaxial InN/InGaN layers directly grown on Si substrates. The sensor, evaluated in KCl aqueous solution, exhibits super-Nernstian sensitivity of −78 mV/decade with good linearity for concentrations of 0.01–1 M, which is the physiologically relevant range. Good stability and re-usability are demonstrated by a long-time drift below 0.2 mV h−1 and standard deviation of 8 mV for repeated measurements over 10 d. These properties fulfil the requirements for compact, robust and highly sensitive all-solid-state sensors and sensor arrays.

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